Year |
Citation |
Score |
2022 |
Barati F, Arp TB, Su S, Lake RK, Aji V, van Grondelle R, Rudner MS, Song JCW, Gabor NM. Vibronic Exciton-Phonon States in Stack-Engineered van der Waals Heterojunction Photodiodes. Nano Letters. PMID 35787025 DOI: 10.1021/acs.nanolett.2c00944 |
0.602 |
|
2020 |
Chen C, Das P, Aytan E, Zhou W, Horowitz J, Satpati B, Balandin AA, Lake RK, Wei P. Strain controlled superconductivity in few-layer NbSe2. Acs Applied Materials & Interfaces. PMID 32805977 DOI: 10.1021/Acsami.0C08804 |
0.407 |
|
2020 |
Huang CY, Kargar F, Debnath T, Debnath B, Valentin MD, Synowicki R, Schoeche S, Lake RK, Balandin AA. Phononic and photonic properties of shape-engineered silicon nanoscale pillar arrays. Nanotechnology. PMID 32240999 DOI: 10.1088/1361-6528/Ab85Ee |
0.33 |
|
2020 |
Djavid N, Lake RK. Electron transport through antiferromagnetic spin textures and skyrmions in a magnetic tunnel junction Physical Review B. 102. DOI: 10.1103/Physrevb.102.024419 |
0.32 |
|
2020 |
Geremew AK, Rumyantsev S, Debnath B, Lake RK, Balandin AA. High-frequency current oscillations in charge-density-wave 1T-TaS2 devices: Revisiting the “narrow band noise” concept Applied Physics Letters. 116: 163101. DOI: 10.1063/5.0007043 |
0.316 |
|
2019 |
Cheng B, Pan C, Che S, Wang P, Wu Y, Watanabe K, Taniguchi T, Ge S, Lake R, Smirnov D, Lau CN, Bockrath M. Fractional and Symmetry-Broken Chern Insulators in Tunable Moiré Superlattices. Nano Letters. PMID 31204812 DOI: 10.1021/Acs.Nanolett.9B00811 |
0.339 |
|
2019 |
Geremew AK, Rumyantsev S, Kargar F, Debnath B, Nosek A, Bloodgood MA, Bockrath M, Salguero TT, Lake RK, Balandin AA. Bias-Voltage Driven Switching of the Charge-Density-Wave and Normal Metallic Phases in 1T-TaS Thin-Film Devices. Acs Nano. PMID 31173685 DOI: 10.1021/Acsnano.9B02870 |
0.322 |
|
2019 |
Stepanov P, Barlas Y, Che S, Myhro K, Voigt G, Pi Z, Watanabe K, Taniguchi T, Smirnov D, Zhang F, Lake RK, MacDonald AH, Lau CN. Quantum parity Hall effect in Bernal-stacked trilayer graphene. Proceedings of the National Academy of Sciences of the United States of America. PMID 31053618 DOI: 10.1073/Pnas.1820835116 |
0.319 |
|
2019 |
Yin G, Yu JX, Liu Y, Lake RK, Zang J, Wang KL. Planar Hall Effect in Antiferromagnetic MnTe Thin Films. Physical Review Letters. 122: 106602. PMID 30932676 DOI: 10.1103/Physrevlett.122.106602 |
0.308 |
|
2019 |
Das P, Wickramaratne D, Debnath B, Yin G, Lake RK. Charged impurity scattering in two-dimensional materials with ring-shaped valence bands: GaS, GaSe, InS, and InSe Physical Review B. 99. DOI: 10.1103/Physrevb.99.085409 |
0.341 |
|
2018 |
Tian H, Khanaki A, Das P, Zheng R, Cui Z, He Y, Shi W, Xu Z, Lake RK, Liu J. The role of carbon interstitials in transition metal substrates on controllable synthesis of high-quality large-area two-dimensional hexagonal boron nitride layers. Nano Letters. PMID 29727192 DOI: 10.1021/Acs.Nanolett.7B05179 |
0.326 |
|
2018 |
Shi Y, Che S, Zhou K, Ge S, Pi Z, Espiritu T, Taniguchi T, Watanabe K, Barlas Y, Lake R, Lau CN. Tunable Lifshitz Transitions and Multiband Transport in Tetralayer Graphene. Physical Review Letters. 120: 096802. PMID 29547315 DOI: 10.1103/Physrevlett.120.096802 |
0.761 |
|
2018 |
Zhu X, Lei S, Tsai SH, Zhang X, Liu J, Yin G, Tang M, Torres CM, Navabi A, Jin Z, Tsai SP, Qasem H, Wang Y, Vajtai R, Lake RK, et al. A Study of Vertical Transport through Graphene towards Control of Quantum Tunneling. Nano Letters. PMID 29300487 DOI: 10.1021/Acs.Nanolett.7B03221 |
0.387 |
|
2018 |
Djavid N, Yin G, Barlas Y, Lake RK. Gate controlled Majorana zero modes of a two-dimensional topological superconductor Applied Physics Letters. 113: 012601. DOI: 10.1063/1.5027440 |
0.319 |
|
2018 |
Mutlu Z, Debnath B, Su S, Li C, Ozkan M, Bozhilov KN, Lake RK, Ozkan CS. Chemical vapor deposition and phase stability of pyrite on SiO2 Journal of Materials Chemistry C. 6: 4753-4759. DOI: 10.1039/C8Tc00584B |
0.537 |
|
2018 |
Stepanov P, Che S, Shcherbakov D, Yang J, Chen R, Thilahar K, Voigt G, Bockrath MW, Smirnov D, Watanabe K, Taniguchi T, Lake RK, Barlas Y, MacDonald AH, Lau CN. Long-distance spin transport through a graphene quantum Hall antiferromagnet Nature Physics. 14: 907-911. DOI: 10.1038/S41567-018-0161-5 |
0.304 |
|
2018 |
Li C, Debnath B, Tan X, Su S, Xu K, Ge S, Neupane MR, Lake RK. Commensurate lattice constant dependent thermal conductivity of misoriented bilayer graphene Carbon. 138: 451-457. DOI: 10.1016/J.Carbon.2018.07.071 |
0.612 |
|
2018 |
Suja M, Debnath B, Bashar SB, Su L, Lake R, Liu J. Electrically driven plasmon-exciton coupled random lasing in ZnO metal-semiconductor-metal devices Applied Surface Science. 439: 525-532. DOI: 10.1016/J.Apsusc.2018.01.075 |
0.324 |
|
2017 |
Barati F, Grossnickle M, Su S, Lake RK, Aji V, Gabor NM. Hot carrier-enhanced interlayer electron-hole pair multiplication in 2D semiconductor heterostructure photocells. Nature Nanotechnology. PMID 28991242 DOI: 10.1038/Nnano.2017.203 |
0.619 |
|
2017 |
Suja M, Bashar SB, Debnath B, Su L, Shi W, Lake R, Liu J. Electrically driven deep ultraviolet MgZnO lasers at room temperature. Scientific Reports. 7: 2677. PMID 28572587 DOI: 10.1038/S41598-017-02791-0 |
0.321 |
|
2017 |
Zhou K, Wickramaratne D, Ge S, Su S, De A, Lake RK. Interlayer resistance of misoriented MoS2. Physical Chemistry Chemical Physics : Pccp. PMID 28379226 DOI: 10.1039/C6Cp08927E |
0.787 |
|
2017 |
Su S, Das P, Ge S, Lake RK. Graphene contacts to a HfSe2/SnS2 heterostructure. The Journal of Chemical Physics. 146: 064701. PMID 28201902 DOI: 10.1063/1.4975178 |
0.627 |
|
2017 |
Chai Y, Su S, Yan D, Ozkan M, Lake R, Ozkan CS. Strain Gated Bilayer Molybdenum Disulfide Field Effect Transistor with Edge Contacts. Scientific Reports. 7: 41593. PMID 28186113 DOI: 10.1038/Srep41593 |
0.617 |
|
2017 |
Debnath B, Barlas Y, Wickramaratne D, Neupane MR, Lake RK. Exciton condensate in bilayer transition metal dichalcogenides: Strong coupling regime Physical Review B. 96. DOI: 10.1103/Physrevb.96.174504 |
0.309 |
|
2017 |
De A, Lake RK. Strong cavity-pseudospin coupling in monolayer transition metal dichalcogenides Physical Review B. 96. DOI: 10.1103/Physrevb.96.035436 |
0.303 |
|
2017 |
Su S, Barlas Y, Li J, Shi J, Lake RK. Effect of intervalley interaction on band topology of commensurate graphene/EuO heterostructures Physical Review B. 95. DOI: 10.1103/Physrevb.95.075418 |
0.624 |
|
2017 |
Lacerda MM, Kargar F, Aytan E, Samnakay R, Debnath B, Li JX, Khitun A, Lake RK, Shi J, Balandin AA. Variable-temperature inelastic light scattering spectroscopy of nickel oxide: Disentangling phonons and magnons Applied Physics Letters. 110: 202406. DOI: 10.1063/1.4983810 |
0.306 |
|
2017 |
Ramnani P, Neupane MR, Ge S, Balandin AA, Lake RK, Mulchandani A. Raman spectra of twisted CVD bilayer graphene Carbon. 123: 302-306. DOI: 10.1016/J.Carbon.2017.07.064 |
0.309 |
|
2016 |
Kargar F, Debnath B, Kakko JP, Säynätjoki A, Lipsanen H, Nika DL, Lake RK, Balandin AA. Direct observation of confined acoustic phonon polarization branches in free-standing semiconductor nanowires. Nature Communications. 7: 13400. PMID 27830698 DOI: 10.1038/Ncomms13400 |
0.368 |
|
2016 |
Malekpour H, Ramnani P, Srinivasan S, Balasubramanian G, Nika DL, Mulchandani A, Lake RK, Balandin AA. Thermal conductivity of graphene with defects induced by electron beam irradiation. Nanoscale. PMID 27432290 DOI: 10.1039/C6Nr03470E |
0.332 |
|
2016 |
Liu G, Debnath B, Pope TR, Salguero TT, Lake RK, Balandin AA. A charge-density-wave oscillator based on an integrated tantalum disulfide-boron nitride-graphene device operating at room temperature. Nature Nanotechnology. PMID 27376243 DOI: 10.1038/Nnano.2016.108 |
0.354 |
|
2016 |
Pant A, Mutlu Z, Wickramaratne D, Cai H, Lake RK, Ozkan C, Tongay S. Fundamentals of lateral and vertical heterojunctions of atomically thin materials. Nanoscale. PMID 26831401 DOI: 10.1039/C5Nr08982D |
0.335 |
|
2016 |
Sylvia SS, Alam K, Lake RK. Uniform Benchmarking of Low-Voltage van der Waals FETs Ieee Journal On Exploratory Solid-State Computational Devices and Circuits. 2: 28-35. DOI: 10.1109/Jxcdc.2016.2619351 |
0.787 |
|
2016 |
Chai Y, Ionescu R, Su S, Lake R, Ozkan M, Ozkan CS. Making one-dimensional electrical contacts to molybdenum disulfide-based heterostructures through plasma etching Physica Status Solidi (a) Applications and Materials Science. DOI: 10.1002/Pssa.201532799 |
0.643 |
|
2015 |
Dhall R, Neupane MR, Wickramaratne D, Mecklenburg M, Li Z, Moore C, Lake RK, Cronin S. Direct bandgap transition in many-layer MoS2 by plasma-induced layer decoupling. Advanced Materials (Deerfield Beach, Fla.). 27: 1573-8. PMID 25589365 DOI: 10.1002/Adma.201405259 |
0.315 |
|
2015 |
Neupane MR, Rahman R, Lake RK. Effect of strain on the electronic and optical properties of Ge-Si dome shaped nanocrystals. Physical Chemistry Chemical Physics : Pccp. 17: 2484-93. PMID 25493297 DOI: 10.1039/C4Cp03711A |
0.32 |
|
2015 |
Khasanvis S, Habib KMM, Rahman M, Lake R, Moritz CA. Low-power heterogeneous graphene nanoribbon-CMOS multistate volatile memory circuit Acm Journal On Emerging Technologies in Computing Systems. 12. DOI: 10.1145/2700233 |
0.309 |
|
2015 |
Galatsis K, Ahn C, Krivorotov I, Kim P, Lake R, Wang KL, Chang JP. A Material Framework for Beyond-CMOS Devices Ieee Journal On Exploratory Solid-State Computational Devices and Circuits. 1: 19-27. DOI: 10.1109/Jxcdc.2015.2424832 |
0.311 |
|
2015 |
Das P, Yin G, Sylvia SS, Alamt K, Wickramaratne D, Lake RK. The impact of the ring shaped valence band in few-layer III-VI materials on fet operation 18th International Workshop On Computational Electronics, Iwce 2015. DOI: 10.1109/IWCE.2015.7301950 |
0.768 |
|
2015 |
Gillgren N, Wickramaratne D, Shi Y, Espiritu T, Yang J, Hu J, Wei J, Liu X, Mao Z, Watanabe K, Taniguchi T, Bockrath M, Barlas Y, Lake RK, Lau CN. Gate tunable quantum oscillations in air-stable and high mobility few-layer phosphorene heterostructures 2d Materials. 2. DOI: 10.1088/2053-1583/2/1/011001 |
0.408 |
|
2015 |
Wickramaratne D, Zahid F, Lake RK. Electronic and thermoelectric properties of van der Waals materials with ring-shaped valence bands Journal of Applied Physics. 118. DOI: 10.1063/1.4928559 |
0.664 |
|
2015 |
Alaskar Y, Arafin S, Lin Q, Wickramaratne D, McKay J, Norman AG, Zhang Z, Yao L, Ding F, Zou J, Goorsky MS, Lake RK, Zurbuchen MA, Wang KL. Theoretical and experimental study of highly textured GaAs on silicon using a graphene buffer layer Journal of Crystal Growth. DOI: 10.1016/J.Jcrysgro.2015.02.003 |
0.335 |
|
2014 |
Sgouros AP, Neupane MR, Sigalas MM, Aravantinos-Zafiris N, Lake RK. Nanoscale phononic interconnects in THz frequencies. Physical Chemistry Chemical Physics : Pccp. 16: 23355-64. PMID 25260120 DOI: 10.1039/C4Cp02328E |
0.357 |
|
2014 |
Huang Y, Sutter E, Sadowski JT, Cotlet M, Monti OL, Racke DA, Neupane MR, Wickramaratne D, Lake RK, Parkinson BA, Sutter P. Tin disulfide-an emerging layered metal dichalcogenide semiconductor: materials properties and device characteristics. Acs Nano. 8: 10743-55. PMID 25247490 DOI: 10.1021/Nn504481R |
0.391 |
|
2014 |
Wickramaratne D, Zahid F, Lake RK. Electronic and thermoelectric properties of few-layer transition metal dichalcogenides. The Journal of Chemical Physics. 140: 124710. PMID 24697473 DOI: 10.1063/1.4869142 |
0.652 |
|
2014 |
Ionescu R, Wang W, Chai Y, Mutlu Z, Ruiz I, Favors Z, Wickramaratne D, Neupane M, Zavala L, Lake R, Ozkan M, Ozkan CS. Synthesis of atomically thin MoS2 triangles and hexagrams and their electrical transport properties Ieee Transactions On Nanotechnology. 13: 749-754. DOI: 10.1109/Tnano.2014.2319081 |
0.35 |
|
2014 |
Sylvia SS, Habib KMM, Khayer MA, Alam K, Neupane M, Lake RK. Effect of random, discrete source dopant distributions on nanowire tunnel FETs Ieee Transactions On Electron Devices. 61: 2208-2214. DOI: 10.1109/Ted.2014.2318521 |
0.795 |
|
2014 |
Yin G, Wickramaratne D, Zhao Y, Lake RK. Coulomb impurity scattering in topological insulator thin films Applied Physics Letters. 105: 33118. DOI: 10.1063/1.4891574 |
0.312 |
|
2014 |
Renteria J, Samnakay R, Jiang C, Pope TR, Goli P, Yan Z, Wickramaratne D, Salguero TT, Khitun AG, Lake RK, Balandin AA. All-metallic electrically gated 2H-TaSe2 thin-film switches and logic circuits Journal of Applied Physics. 115. DOI: 10.1063/1.4862336 |
0.348 |
|
2014 |
Mutlu Z, Wickramaratne D, Bay HH, Favors ZJ, Ozkan M, Lake R, Ozkan CS. Synthesis, characterization, and electronic structure of few-layer MoSe2granular films Physica Status Solidi (a). 211: 2671-2676. DOI: 10.1002/Pssa.201431131 |
0.314 |
|
2014 |
Alaskar Y, Arafin S, Wickramaratne D, Zurbuchen MA, He L, Mckay J, Lin Q, Goorsky MS, Lake RK, Wang KL. Towards van der waals epitaxial growth of GaAs on Si using a graphene buffer layer Advanced Functional Materials. DOI: 10.1002/Adfm.201400960 |
0.329 |
|
2013 |
Habib KMM, Sylvia SS, Ge S, Neupane M, Lake RK. The coherent interlayer resistance of a single, rotated interface between two stacks of AB graphite Applied Physics Letters. 103. DOI: 10.1063/1.4841415 |
0.768 |
|
2013 |
Ahsan S, Masum Habib KM, Neupane MR, Lake RK. Interlayer magnetoconductance of misoriented bilayer graphene ribbons Journal of Applied Physics. 114. DOI: 10.1063/1.4830019 |
0.64 |
|
2013 |
Masum Habib KM, Zahid F, Lake RK. Multi-state current switching by voltage controlled coupling of crossed graphene nanoribbons Journal of Applied Physics. 114. DOI: 10.1063/1.4826264 |
0.645 |
|
2013 |
Yin G, Wickramaratne D, Lake RK. Tunneling spectroscopy of chiral states in ultra-thin topological insulators Journal of Applied Physics. 113: 63707. DOI: 10.1063/1.4790804 |
0.331 |
|
2012 |
Alam K, Lake RK. Monolayer $\hbox{MoS}_{2}$ Transistors Beyond the Technology Road Map Ieee Transactions On Electron Devices. 59: 3250-3254. DOI: 10.1109/Ted.2012.2218283 |
0.58 |
|
2012 |
Sylvia SS, Khayer MA, Alam K, Lake RK. Doping, Tunnel Barriers, and Cold Carriers in InAs and InSb Nanowire Tunnel Transistors Ieee Transactions On Electron Devices. 59: 2996-3001. DOI: 10.1109/Ted.2012.2212442 |
0.803 |
|
2012 |
Sylvia SS, Park H, Khayer MA, Alam K, Klimeck G, Lake RK. Material Selection for Minimizing Direct Tunneling in Nanowire Transistors Ieee Transactions On Electron Devices. 59: 2064-2069. DOI: 10.1109/Ted.2012.2200688 |
0.797 |
|
2012 |
Habib KMM, Lake RK. Current modulation by voltage control of the quantum phase in crossed graphene nanoribbons Physical Review B. 86: 45418. DOI: 10.1103/Physrevb.86.045418 |
0.381 |
|
2012 |
Neupane MR, Lake RK, Rahman R. Electronic states of Ge/Si nanocrystals with crescent-shaped Ge-cores Journal of Applied Physics. 112. DOI: 10.1063/1.4739715 |
0.363 |
|
2012 |
Khan J, Nolen CM, Teweldebrhan D, Wickramaratne D, Lake RK, Balandin AA. Anomalous electron transport in back-gated field-effect transistors with TiTe2 semimetal thin-film channels Applied Physics Letters. 100: 043109. DOI: 10.1063/1.3679679 |
0.38 |
|
2011 |
Upadhyayula S, Bao D, Millare B, Sylvia SS, Habib KM, Ashraf K, Ferreira A, Bishop S, Bonderer R, Baqai S, Jing X, Penchev M, Ozkan M, Ozkan CS, Lake RK, et al. Permanent electric dipole moments of carboxyamides in condensed media: what are the limitations of theory and experiment? The Journal of Physical Chemistry. B. 115: 9473-90. PMID 21682315 DOI: 10.1021/Jp2045383 |
0.761 |
|
2011 |
Ashraf MK, Bruque NA, Tan JL, Beran GJ, Lake RK. Conductance switching in diarylethenes bridging carbon nanotubes. The Journal of Chemical Physics. 134: 024524. PMID 21241137 DOI: 10.1063/1.3528118 |
0.789 |
|
2011 |
Lin J, Teweldebrhan D, Ashraf K, Liu G, Jing X, Yan Z, Ozkan M, Lake RK, Balandin AA, Ozkan CS. DNA Gating effect from single layer graphene Mrs Proceedings. 1344. DOI: 10.1557/Opl.2011.1353 |
0.355 |
|
2011 |
Habib KMM, Ahsan S, Lake RK. Computational study of negative differential resistance in graphene bilayer nanostructures Proceedings of Spie. 8101. DOI: 10.1117/12.894252 |
0.665 |
|
2011 |
Sylvia SS, Khayer MA, Alam K, Lake RK. Design issue analysis for InAs nanowire tunnel FETs Proceedings of Spie. 8102. DOI: 10.1117/12.894249 |
0.8 |
|
2011 |
Neupane MR, Rahman R, Lake RK. Carrier leakage in Ge/Si core-shell nanocrystals for lasers: Core size and strain effects Proceedings of Spie - the International Society For Optical Engineering. 8102. DOI: 10.1117/12.894153 |
0.328 |
|
2011 |
Khayer MA, Lake RK. Effects of band-tails on the subthreshold characteristics of nanowire band-to-band tunneling transistors Journal of Applied Physics. 110: 74508. DOI: 10.1063/1.3642954 |
0.367 |
|
2011 |
Habib KMM, Zahid F, Lake RK. Negative differential resistance in bilayer graphene nanoribbons Applied Physics Letters. 98. DOI: 10.1063/1.3590772 |
0.654 |
|
2010 |
Lin J, Teweldebrhan D, Ashraf K, Liu G, Jing X, Yan Z, Li R, Ozkan M, Lake RK, Balandin AA, Ozkan CS. Gating of single-layer graphene with single-stranded deoxyribonucleic acids. Small (Weinheim An Der Bergstrasse, Germany). 6: 1150-5. PMID 20473987 DOI: 10.1002/Smll.200902379 |
0.367 |
|
2010 |
Khan MI, Martinez-Morales A, Penchev M, Yengel E, Jing X, Ozkan M, Lake R, Ozkan CS. Electrochemical Synthesis of Compositionally Modulated InxSb1–xNanowire Homojunctions and Their Tunneling AFM Characterization Journal of Nanoelectronics and Optoelectronics. 4: 312-315. DOI: 10.1166/Jno.2009.1046 |
0.338 |
|
2010 |
Zahid F, Lake R. Thermoelectric properties of Bi2 Te3 atomic quintuple thin films Applied Physics Letters. 97. DOI: 10.1063/1.3518078 |
0.646 |
|
2010 |
Khayer MA, Lake RK. Modeling and performance analysis of GaN nanowire field-effect transistors and band-to-band tunneling field-effect transistors Journal of Applied Physics. 108: 104503. DOI: 10.1063/1.3510502 |
0.442 |
|
2010 |
Khayer MA, Lake RK. Diameter dependent performance of high-speed, low-power InAs nanowire field-effect transistors Journal of Applied Physics. 107: 14502. DOI: 10.1063/1.3275502 |
0.392 |
|
2010 |
Khayer MA, Lake RK. Modeling and performance analysis of high‐speed, low‐power InAs nanowire field‐effect transistors Physica Status Solidi (C). 7: 2514-2517. DOI: 10.1002/Pssc.200983879 |
0.368 |
|
2009 |
Ashraf MK, Millare B, Gerasimenko AA, Bao D, Pandey RR, Lake RK, Vullev VI. Theoretical design of bioinspired macromolecular electrets based on anthranilamide derivatives. Biotechnology Progress. 25: 915-22. PMID 19452534 DOI: 10.1002/Btpr.189 |
0.341 |
|
2009 |
Khayer MA, Lake RK. High-Speed and Low-Power Performance of n-type InSb/InP and InAs/InP Core/Shell Nanowire Field Effect Transistors for CMOS Logic Applications Mrs Proceedings. 1178. DOI: 10.1557/Proc-1178-Aa01-07 |
0.734 |
|
2009 |
Lin J, Teweldebrhan D, Ashraf K, Liu G, Jing X, Yan Z, Li R, Lake RK, Ozkan M, Balandin AA, Ozkan CS. Gating of single layer graphene using DNA Proceedings of Spie. 7403. DOI: 10.1117/12.826801 |
0.318 |
|
2009 |
Khayer MA, Lake RK. The Quantum and Classical Capacitance Limits of InSb and InAs Nanowire FETs Ieee Transactions On Electron Devices. 56: 2215-2223. DOI: 10.1109/Ted.2009.2028401 |
0.336 |
|
2009 |
Khayer MA, Lake RK. Drive Currents and Leakage Currents in InSb and InAs Nanowire and Carbon Nanotube Band-to-Band Tunneling FETs Ieee Electron Device Letters. 30: 1257-1259. DOI: 10.1109/Led.2009.2034277 |
0.425 |
|
2009 |
Bruque NA, Ashraf MK, Beran GJO, Helander TR, Lake RK. Conductance of a conjugated molecule with carbon nanotube contacts Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/Physrevb.80.155455 |
0.782 |
|
2009 |
Ashraf MK, Bruque NA, Pandey RR, Collins PG, Lake RK. Effect of localized oxygen functionalization on the conductance of metallic carbon nanotubes Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.115428 |
0.776 |
|
2009 |
Khayer MA, Lake RK. Performance analysis of InP nanowire band-to-band tunneling field-effect transistors Applied Physics Letters. 95: 73504. DOI: 10.1063/1.3212892 |
0.438 |
|
2008 |
Khayer MA, Lake RK. Performance of $n$ -Type InSb and InAs Nanowire Field-Effect Transistors Ieee Transactions On Electron Devices. 55: 2939-2945. DOI: 10.1109/Ted.2008.2005173 |
0.394 |
|
2007 |
Alam K, Lake R. Role of Doping in Carbon Nanotube Transistors With Source/Drain Underlaps Ieee Transactions On Nanotechnology. 6: 652-658. DOI: 10.1109/Tnano.2007.908170 |
0.609 |
|
2007 |
Alam K, Lake R. Performance Metrics of a 5 nm, Planar, Top Gate, Carbon Nanotube on Insulator (COI) Transistor Ieee Transactions On Nanotechnology. 6: 186-190. DOI: 10.1109/Tnano.2007.891821 |
0.62 |
|
2007 |
Bruque NA, Pandey RR, Lake RK. Electron transport through a conjugated molecule with carbon nanotube leads Physical Review B. 76. DOI: 10.1103/Physrevb.76.205322 |
0.778 |
|
2007 |
Shah D, Bruque NA, Alam K, Lake RK, Pandey RR. Electronic properties of carbon nanotubes calculated from density functional theory and the empirical π-bond model Journal of Computational Electronics. 6: 395-400. DOI: 10.1007/S10825-007-0147-5 |
0.79 |
|
2006 |
Wang X, Liu F, Andavan GT, Jing X, Singh K, Yazdanpanah VR, Bruque N, Pandey RR, Lake R, Ozkan M, Wang KL, Ozkan CS. Carbon nanotube-DNA nanoarchitectures and electronic functionality. Small (Weinheim An Der Bergstrasse, Germany). 2: 1356-65. PMID 17192987 DOI: 10.1002/Smll.200600056 |
0.796 |
|
2006 |
Bruque NA, Alam K, Pandey RR, Lake RK, Lewis JP, Wang X, Liu F, Ozkan CS, Ozkan M, Wang KL. Self-Assembled Carbon Nanotubes for Electronic Circuit and Device Applications Journal of Nanoelectronics and Optoelectronics. 1: 74-81. DOI: 10.1166/Jno.2006.007 |
0.791 |
|
2006 |
Alam K, Lake RK. Dielectric scaling of a zero-Schottky-barrier, 5nm gate, carbon nanotube transistor with source/drain underlaps Journal of Applied Physics. 100: 24317. DOI: 10.1063/1.2218764 |
0.618 |
|
2006 |
Singh KV, Pandey RR, Wang X, Lake R, Ozkan CS, Wang K, Ozkan M. Covalent functionalization of single walled carbon nanotubes with peptide nucleic acid: Nanocomponents for molecular level electronics Carbon. 44: 1730-1739. DOI: 10.1016/J.Carbon.2005.12.048 |
0.382 |
|
2006 |
Pandey RR, Bruque N, Alam K, Lake RK. Carbon nanotube - molecular resonant tunneling diode Physica Status Solidi (a). 203: R5-R7. DOI: 10.1002/Pssa.200521467 |
0.792 |
|
2005 |
Singh KV, Wang X, Pandey RR, Lake R, Ozkan CS, Ozkan M. Functionally Engineered Carbon Nanotubes-Peptide Nucleic Acid Nanocomponents Mrs Proceedings. 872. DOI: 10.1557/Proc-872-J13.7 |
0.336 |
|
2005 |
Zheng Y, Rivas C, Lake R, Alam K, Boykin T, Klimeck G. Electronic Properties of Silicon Nanowires Ieee Transactions On Electron Devices. 52: 1097-1103. DOI: 10.1109/Ted.2005.848077 |
0.681 |
|
2005 |
Bruque N, Pandey RR, Lake RK, Wang H, Lewis JP. Electronic transport through a CNT-Pseudopeptide-CNT hybrid material Molecular Simulation. 31: 859-864. DOI: 10.1080/08927020500323879 |
0.791 |
|
2005 |
Alam K, Lake RK. Leakage and performance of zero-Schottky-barrier carbon nanotube transistors Journal of Applied Physics. 98: 64307. DOI: 10.1063/1.2060962 |
0.622 |
|
2005 |
Alam K, Lake R. Performance of 2 nm gate length carbon nanotube field-effect transistors with source∕drain underlaps Applied Physics Letters. 87: 73104. DOI: 10.1063/1.2011788 |
0.635 |
|
2005 |
Green J, Boykin TB, Farmer CD, Garcia M, Ironside CN, Klimeck G, Lake R, Stanley CR. Quantum cascade laser gain medium modeling using a second-nearest-neighbor tight-binding model Superlattices and Microstructures. 37: 410-424. DOI: 10.1016/J.Spmi.2005.03.003 |
0.511 |
|
2004 |
Zheng Y, Lake R. Self-consistent transit-time model for a resonant tunnel diode Ieee Transactions On Electron Devices. 51: 535-541. DOI: 10.1109/Ted.2004.824683 |
0.309 |
|
2004 |
Chung SY, Jin N, Berger PR, Yu R, Thompson PE, Lake R, Rommel SL, Kurinec SK. Three-terminal Si-based negative differential resistance circuit element with adjustable peak-to-valley current ratios using a monolithic vertical integration Applied Physics Letters. 84: 2688-2690. DOI: 10.1063/1.1690109 |
0.342 |
|
2003 |
Jin N, Chung SY, Rice AT, Berger PR, Thompson PE, Rivas C, Lake R, Sudirgo S, Kempisty JJ, Curanovic B, Rommel SL, Hirschman KD, Kurinec SK, Chi PH, Simons DS. Diffusion barrier cladding in Si/SiGe resonant interband tunneling diodes and their patterned growth on PMOS source/drain regions Ieee Transactions On Electron Devices. 50: 1876-1884. DOI: 10.1109/Ted.2003.815375 |
0.349 |
|
2003 |
Jin N, Chung SY, Rice AT, Berger PR, Yu R, Thompson PE, Lake R. 151 kA/cm2 peak current densities in Si/SiGe resonant interband tunneling diodes for high-power mixed-signal applications Applied Physics Letters. 83: 3308-3310. DOI: 10.1063/1.1618927 |
0.34 |
|
2003 |
Rivas C, Lake R, Frensley WR, Klimeck G, Thompson PE, Hobart KD, Rommel SL, Berger PR. Full band modeling of the excess current in a delta-doped silicon tunnel diode Journal of Applied Physics. 94: 5005-5013. DOI: 10.1063/1.1606114 |
0.573 |
|
2003 |
Zheng Y, Lake R. Barrier asymmetry and the mm-wave performance of resonant tunnel diodes Superlattices and Microstructures. 34: 355-360. DOI: 10.1016/J.Spmi.2004.03.065 |
0.325 |
|
2003 |
Rivas C, Lake R. Non-equilibrium Green function implementation of boundary conditions for full band simulations of substrate-nanowire structures Physica Status Solidi (B) Basic Research. 239: 94-102. DOI: 10.1002/Pssb.200303240 |
0.361 |
|
2001 |
Rivas C, Lake R, Klimeck G, Frensley WR, Fischetti MV, Thompson PE, Rommel SL, Berger PR. Full-band simulation of indirect phonon assisted tunneling in a silicon tunnel diode with delta-doped contacts Applied Physics Letters. 78: 814-816. DOI: 10.1063/1.1343500 |
0.578 |
|
2000 |
Dashiell MW, Troeger RT, Rommel SL, Adam TN, Berger PR, Guedj C, Kolodzey J, Seabaugh AC, Lake R. Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing Ieee Transactions On Electron Devices. 47: 1707-1714. DOI: 10.1109/16.861581 |
0.366 |
|
2000 |
Boykin TB, Klimeck G, Bowen RC, Lake R. Erratum: Effective-mass reproducibility of the nearest-neighborsp3s*models: Analytic results [Phys. Rev. B56, 4102 (1997)] Physical Review B. 61: 5033-5033. DOI: 10.1103/Physrevb.61.5033 |
0.464 |
|
2000 |
Thompson PE, Hobart KD, Twigg ME, Rommel SL, Jin N, Berger PR, Lake R, Seabaugh AC, Chi PH, Simons DS. Epitaxial Si-based tunnel diodes Thin Solid Films. 380: 145-150. DOI: 10.1016/S0040-6090(00)01490-5 |
0.343 |
|
1999 |
Rommel SL, Dillon TE, Berger PR, Thompson PE, Hobart KD, Lake R, Seabaugh AC. Epitaxially grown Si resonant interband tunnel diodes exhibiting high current densities Ieee Electron Device Letters. 20: 329-331. DOI: 10.1109/55.772366 |
0.369 |
|
1999 |
Wilkins R, Shojah-Ardalan S, Kirk WP, Spencer GF, Bate RT, Seabaugh AC, Lake R. Lonization and displacement damage irradiation studies of quantum devices: Resonant tunneling diodes and two-dimensional electron gas transistors Ieee Transactions On Nuclear Science. 46: 1702-1707. DOI: 10.1109/23.819142 |
0.304 |
|
1999 |
Boykin TB, Lake RK, Klimeck G, Swaminathan M. Interface effects in tunneling models with identical real and complex dispersions Physical Review B. 59: 7316-7319. DOI: 10.1103/Physrevb.59.7316 |
0.479 |
|
1999 |
Thompson PE, Hobart KD, Twigg ME, Jernigan GG, Dillon TE, Rommel SL, Berger PR, Simons DS, Chi PH, Lake R, Seabaugh AC. Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy Applied Physics Letters. 75: 1308-1310. DOI: 10.1063/1.124677 |
0.332 |
|
1998 |
Lake R, Klimeck G, Bowen RC, Jovanovic D, Sotirelis P, Frensley WR. A Generalized Tunneling Formula for Quantum Device Modeling Vlsi Design. 6: 9-12. DOI: 10.1155/1998/84503 |
0.545 |
|
1998 |
Klimeck G, Lake RK, Bowen RC, Fernando CL, Frensley WR. Resolution of Resonances in a General Purpose Quantum Device Simulator (NEMO) Vlsi Design. 6: 107-110. DOI: 10.1155/1998/43043 |
0.521 |
|
1998 |
Klimeck G, Blanks D, Lake R, Bowen RC, Fernando CL, Leng M, Frensley WR, Jovanovic D, Sotirelis P. Writing Research Software in a Large Group for the NEMO Project Vlsi Design. 8: 79-86. DOI: 10.1155/1998/35374 |
0.515 |
|
1998 |
Klimeck G, Lake R, Blanks DK. Role of interface roughness scattering in self-consistent resonant-tunneling-diode simulations Physical Review B. 58: 7279-7285. DOI: 10.1103/Physrevb.58.7279 |
0.506 |
|
1998 |
Klimeck G, Lake R, Blanks DK. Numerical approximations to the treatment of interface roughness scattering in resonant tunnelling diodes Semiconductor Science and Technology. 13: A165-A168. DOI: 10.1088/0268-1242/13/8A/047 |
0.512 |
|
1998 |
Lake R, Klimeck G, Blanks D. Interface roughness and polar optical phonon scattering in RTDs Semiconductor Science and Technology. 13: A163-A164. DOI: 10.1088/0268-1242/13/8A/046 |
0.522 |
|
1998 |
Rommel SL, Dillon TE, Dashiell MW, Feng H, Kolodzey J, Berger PR, Thompson PE, Hobart KD, Lake R, Seabaugh AC, Klimeck G, Blanks DK. Room temperature operation of epitaxially grown Si/Si0.5Ge0.5/Si resonant interband tunneling diodes Applied Physics Letters. 73: 2191-2193. DOI: 10.1063/1.122419 |
0.54 |
|
1997 |
Seabaugh A, Lake R, Brar B, Wallacet R, Wilk G. Beyond-The-Roadmap Technology: Silicon Heterojunctions, Optoelectronics, and Quantum Devices Mrs Proceedings. 486. DOI: 10.1557/Proc-486-67 |
0.33 |
|
1997 |
Boykin TB, Klimeck G, Bowen RC, Lake R. Effective-mass reproducibility of the nearest-neighborsp3s*models: Analytic results Physical Review B. 56: 4102-4107. DOI: 10.1103/Physrevb.56.4102 |
0.469 |
|
1997 |
Lake R, Klimeck G, Bowen RC, Jovanovic D. Single and multiband modeling of quantum electron transport through layered semiconductor devices Journal of Applied Physics. 81: 7845-7869. DOI: 10.1063/1.365394 |
0.557 |
|
1997 |
Bowen RC, Klimeck G, Lake RK, Frensley WR, Moise T. Quantitative simulation of a resonant tunneling diode Journal of Applied Physics. 81: 3207-3213. DOI: 10.1063/1.364151 |
0.558 |
|
1997 |
Klimeck G, Lake R, Blanks D, Fernando CL, Bowen C, Moise T, Kao YC. The Effects of Electron Screening Length and Emitter Quasi-Bound States on the Polar-Optical Phonon Scattering in Resonant Tunneling Diodes Physica Status Solidi (B). 204: 408-411. DOI: 10.1002/1521-3951(199711)204:1<408::Aid-Pssb408>3.0.Co;2-V |
0.529 |
|
1997 |
Lake R, Klimeck G, Bowen RC, Jovanovic D, Blanks D, Swaminathan M. Quantum Transport with Band-Structure and Schottky Contacts Physica Status Solidi (B). 204: 354-357. DOI: 10.1002/1521-3951(199711)204:1<354::Aid-Pssb354>3.0.Co;2-V |
0.538 |
|
1996 |
Lake R, Klimeck G, Bowen R, Fernando C, Moise T, Kao Y, Leng M. Interface roughness, polar optical phonons, and the valley current of a resonant tunneling diode Superlattices and Microstructures. 20: 279-285. DOI: 10.1006/Spmi.1996.0079 |
0.535 |
|
1995 |
Klimeck G, Lake R, Bowen RC, Frensley WR, Moise TS. Quantum device simulation with a generalized tunneling formula Applied Physics Letters. 67: 2539-2541. DOI: 10.1063/1.114451 |
0.53 |
|
1994 |
Klimeck G, Lake R, Datta S, Bryant GW. Elastic and inelastic scattering in quantum dots in the Coulomb-blockade regime. Physical Review B. 50: 5484-5496. PMID 9976892 DOI: 10.1103/Physrevb.50.5484 |
0.591 |
|
1994 |
Huang K, Carroll M, Starnes G, Lake R, Janes D, Webb K, Melloch M. Numerically generated resonant tunneling diode equivalent circuit parameters Journal of Applied Physics. 76: 3850-3857. DOI: 10.1063/1.357389 |
0.329 |
|
1993 |
Lake R, Klimeck G, Datta S. Rate equations from the Keldysh formalism applied to the phonon peak in resonant-tunneling diodes. Physical Review B. 47: 6427-6438. PMID 10004608 DOI: 10.1103/Physrevb.47.6427 |
0.607 |
|
1993 |
Lake R, Klimeck G, Anantram MP, Datta S. Rate equations for the phonon peak in resonant-tunneling structures Physical Review B. 48: 15132-15137. DOI: 10.1103/Physrevb.48.15132 |
0.638 |
|
1992 |
Lake R, Datta S. Energy balance and heat exchange in mesoscopic systems. Physical Review B. 46: 4757-4763. PMID 10004235 DOI: 10.1103/Physrevb.46.4757 |
0.505 |
|
1992 |
Bagwell PF, Lake RK. Resonances in transmission through an oscillating barrier. Physical Review B. 46: 15329-15336. PMID 10003650 DOI: 10.1103/Physrevb.46.15329 |
0.321 |
|
1992 |
Lake R, Datta S. Nonequilibrium Green's-function method applied to double-barrier resonant-tunneling diodes. Physical Review B. 45: 6670-6685. PMID 10000428 DOI: 10.1103/Physrevb.45.6670 |
0.558 |
|
1992 |
Lake R, Datta S. High-bias quantum electron transport Superlattices and Microstructures. 11: 83-87. DOI: 10.1016/0749-6036(92)90367-E |
0.547 |
|
1992 |
Lee Y, McLennan M, Klimeck G, Lake R, Datta S. Quantum kinetic analysis of mesoscopic systems: Linear response Superlattices and Microstructures. 11: 137-140. DOI: 10.1016/0749-6036(92)90237-Y |
0.61 |
|
1991 |
Datta S, Lake RK. Voltage probes and inelastic scattering. Physical Review B. 44: 6538-6541. PMID 9998523 DOI: 10.1103/Physrevb.44.6538 |
0.47 |
|
1991 |
Neofotistos G, Lake R, Datta S. Inelastic-scattering effects on single-barrier tunneling. Physical Review B. 43: 2442-2445. PMID 9997530 DOI: 10.1103/Physrevb.43.2442 |
0.463 |
|
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