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Khairul Alam, Ph.D. - Publications

Affiliations: 
2006 University of California, Riverside, Riverside, CA, United States 
Area:
Electronics and Electrical Engineering
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33 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Alam K. Physical insight and performance metrics of monolayer MX2 heterojunction TFETs Micro & Nano Letters. 15: 81-85. DOI: 10.1049/Mnl.2019.0588  0.524
2017 Alam K. Orientation Engineering for Improved Performance of a Ge-Si Heterojunction Nanowire TFET Ieee Transactions On Electron Devices. 64: 4850-4855. DOI: 10.1109/Ted.2017.2766681  0.431
2016 Sylvia SS, Alam K, Lake RK. Uniform Benchmarking of Low-Voltage van der Waals FETs Ieee Journal On Exploratory Solid-State Computational Devices and Circuits. 2: 28-35. DOI: 10.1109/Jxcdc.2016.2619351  0.76
2016 Mondol K, Hasan MM, Arafath Y, Alam K. Quantization effects on the inversion mode of a double gate MOS Results in Physics. 6: 339-341. DOI: 10.1016/J.Rinp.2016.06.002  0.385
2014 Sylvia SS, Habib KMM, Khayer MA, Alam K, Neupane M, Lake RK. Effect of random, discrete source dopant distributions on nanowire tunnel FETs Ieee Transactions On Electron Devices. 61: 2208-2214. DOI: 10.1109/Ted.2014.2318521  0.77
2013 Alam K, Takagi S, Takenaka M. Analysis and Comparison of L-Valley Transport in GaAs, GaSb, and Ge Ultrathin-Body Ballistic nMOSFETs Ieee Transactions On Electron Devices. 60: 4213-4218. DOI: 10.1109/Ted.2013.2285394  0.412
2012 Alam K, Abdullah MA. Effects of Dielectric Constant on the Performance of a Gate All Around InAs Nanowire Transistor Ieee Transactions On Nanotechnology. 11: 82-87. DOI: 10.1109/Tnano.2011.2157935  0.484
2012 Alam K, Lake RK. Monolayer $\hbox{MoS}_{2}$ Transistors Beyond the Technology Road Map Ieee Transactions On Electron Devices. 59: 3250-3254. DOI: 10.1109/Ted.2012.2218283  0.647
2012 Sylvia SS, Khayer MA, Alam K, Lake RK. Doping, Tunnel Barriers, and Cold Carriers in InAs and InSb Nanowire Tunnel Transistors Ieee Transactions On Electron Devices. 59: 2996-3001. DOI: 10.1109/Ted.2012.2212442  0.774
2012 Sylvia SS, Park H, Khayer MA, Alam K, Klimeck G, Lake RK. Material Selection for Minimizing Direct Tunneling in Nanowire Transistors Ieee Transactions On Electron Devices. 59: 2064-2069. DOI: 10.1109/Ted.2012.2200688  0.779
2012 Alam K. Uniaxial Stress-Modulated Electronic Properties of a Free-Standing InAs Nanowire Ieee Transactions On Electron Devices. 59: 661-665. DOI: 10.1109/Ted.2011.2177096  0.305
2011 Sylvia SS, Khayer MA, Alam K, Lake RK. Design issue analysis for InAs nanowire tunnel FETs Proceedings of Spie. 8102. DOI: 10.1117/12.894249  0.782
2010 Wahab MA, Alam K. Performance of Zero-Schottky-Barrier and Doped Contacts Single and Double Walled Carbon Nanotube Transistors Japanese Journal of Applied Physics. 49: 25101. DOI: 10.1143/Jjap.49.025101  0.536
2010 Alam K, Sajjad RN. Electronic Properties and Orientation-Dependent Performance of InAs Nanowire Transistors Ieee Transactions On Electron Devices. 57: 2880-2885. DOI: 10.1109/Ted.2010.2066569  0.484
2010 Wahab MA, Alam K. Performance comparison of zero-Schottky-barrier and doped contacts carbon nanotube transistors with strain applied Nano-Micro Letters. 2: 126-133. DOI: 10.1007/Bf03353630  0.455
2010 Bhowmick S, Alam K. Effects of source-drain underlaps on the performance of silicon nanowire on insulator transistors Nano-Micro Letters. 2: 83-88. DOI: 10.1007/Bf03353623  0.536
2009 Alam K. Uniaxial Strain Effects on the Performance of a Ballistic Top Gate Graphene Nanoribbon on Insulator Transistor Ieee Transactions On Nanotechnology. 8: 528-534. DOI: 10.1109/Tnano.2008.2011811  0.348
2009 Alam K. Transport and performance of a gate all around InAs nanowire transistor Semiconductor Science and Technology. 24: 85003. DOI: 10.1088/0268-1242/24/8/085003  0.537
2009 Sajjad RN, Alam K, Khosru QDM. Parametrization of a silicon nanowire effective mass model from sp3d5s* orbital basis calculations Semiconductor Science and Technology. 24: 045023. DOI: 10.1088/0268-1242/24/4/045023  0.518
2009 Alam K. Transport and performance of a zero-Schottky barrier and doped contacts graphene nanoribbon transistors Semiconductor Science and Technology. 24: 15007. DOI: 10.1088/0268-1242/24/1/015007  0.485
2009 Sajjad RN, Alam K. Electronic properties of a strained ⟨100⟩ silicon nanowire Journal of Applied Physics. 105: 044307. DOI: 10.1063/1.3078826  0.326
2008 Bhowmick S, Alam K. Dielectric scaling of a top gate silicon nanowire on insulator transistor Journal of Applied Physics. 104. DOI: 10.1063/1.3043662  0.452
2008 Alam K. Gate dielectric scaling of top gate carbon nanoribbon on insulator transistors Journal of Applied Physics. 104: 74313. DOI: 10.1063/1.2990067  0.553
2007 Alam K, Lake R. Role of Doping in Carbon Nanotube Transistors With Source/Drain Underlaps Ieee Transactions On Nanotechnology. 6: 652-658. DOI: 10.1109/Tnano.2007.908170  0.681
2007 Alam K, Lake R. Performance Metrics of a 5 nm, Planar, Top Gate, Carbon Nanotube on Insulator (COI) Transistor Ieee Transactions On Nanotechnology. 6: 186-190. DOI: 10.1109/Tnano.2007.891821  0.698
2007 Shah D, Bruque NA, Alam K, Lake RK, Pandey RR. Electronic properties of carbon nanotubes calculated from density functional theory and the empirical π-bond model Journal of Computational Electronics. 6: 395-400. DOI: 10.1007/S10825-007-0147-5  0.747
2006 Bruque NA, Alam K, Pandey RR, Lake RK, Lewis JP, Wang X, Liu F, Ozkan CS, Ozkan M, Wang KL. Self-Assembled Carbon Nanotubes for Electronic Circuit and Device Applications Journal of Nanoelectronics and Optoelectronics. 1: 74-81. DOI: 10.1166/Jno.2006.007  0.76
2006 Alam K, Lake RK. Dielectric scaling of a zero-Schottky-barrier, 5nm gate, carbon nanotube transistor with source/drain underlaps Journal of Applied Physics. 100: 24317. DOI: 10.1063/1.2218764  0.698
2006 Pandey RR, Bruque N, Alam K, Lake RK. Carbon nanotube - molecular resonant tunneling diode Physica Status Solidi (a). 203: R5-R7. DOI: 10.1002/Pssa.200521467  0.763
2005 Zheng Y, Rivas C, Lake R, Alam K, Boykin T, Klimeck G. Electronic Properties of Silicon Nanowires Ieee Transactions On Electron Devices. 52: 1097-1103. DOI: 10.1109/Ted.2005.848077  0.615
2005 Alam K, Lake RK. Leakage and performance of zero-Schottky-barrier carbon nanotube transistors Journal of Applied Physics. 98: 64307. DOI: 10.1063/1.2060962  0.718
2005 Alam K, Lake R. Performance of 2 nm gate length carbon nanotube field-effect transistors with source∕drain underlaps Applied Physics Letters. 87: 73104. DOI: 10.1063/1.2011788  0.719
2002 Haque A, Alam K. Accurate modeling of direct tunneling hole current in p-metal-oxide- semiconductor devices Applied Physics Letters. 81: 667-669. DOI: 10.1063/1.1495084  0.497
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