☰

Xiao Shen, Ph.D. - Publications

Affiliations: 
2004-2009 Physics and Astronomy Stony Brook University, Stony Brook, NY, United States 
 2009-2015 Physics and Astronomy Vanderbilt University, Nashville, TN 
 2015- Physics and Materials Science University of Memphis, Memphis, TN, United States 
Area:
Condensed Matter Physics, Physical Chemistry
Tree Info Similar researchers PubMed Report error

49 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Chen J, Bhattarai R, Cui J, Shen X, Hoang T. Anisotropic optical properties of single SiTe nanoplates. Scientific Reports. 10: 19205. PMID 33154529 DOI: 10.1038/s41598-020-76265-1  0.609
2020 Bhattarai R, Shen X. Predicting a Novel Phase of 2D SiTe. Acs Omega. 5: 16848-16855. PMID 32685854 DOI: 10.1021/acsomega.0c02048  0.607
2020 Bhattarai R, Chen J, Hoang TB, Cui J, Shen X. Anisotropic Optical Properties of 2D Silicon Telluride Mrs Advances. 5: 1881-1889. DOI: 10.1557/Adv.2020.186  0.37
2020 Bhattarai R, Shen X. Ultra-high mechanical flexibility of 2D silicon telluride Applied Physics Letters. 116: 23101. DOI: 10.1063/1.5120533  0.351
2019 Ghimire M, Bhoyate S, Gupta RK, Shen X, Perez F, Alam J, Mishra SR. Physical Properties and Theoretical Study of NiCoO₄ (0 ≤ ≤ 1.5) Nanostructures as High-Performance Electrode Materials for Supercapacitors. Journal of Nanoscience and Nanotechnology. 19: 4481-4494. PMID 30913739 DOI: 10.1166/Jnn.2019.16644  0.319
2019 Chen J, Wu K, Shen X, Hoang TB, Cui J. Probing the dynamics of photoexcited carriers in Si2Te3 nanowires Journal of Applied Physics. 125: 24306. DOI: 10.1063/1.5053932  0.327
2018 Jiang R, Shen X, Fang J, Wang P, Zhang EX, Chen J, Fleetwood DM, Schrimpf RD, Kaun SW, Kyle EC, Speck JS, Pantelides ST. Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs Ieee Transactions On Device and Materials Reliability. 18: 364-376. DOI: 10.1109/Tdmr.2018.2847338  0.5
2018 Jayawardena A, Shen X, Mooney PM, Dhar S. Mechanism of phosphorus passivation of near-interface oxide traps in 4H–SiC MOS devices investigated by CCDLTS and DFT calculation Semiconductor Science and Technology. 33: 65005. DOI: 10.1088/1361-6641/Aabda2  0.409
2017 Jiang R, Zhang EX, McCurdy MW, Chen J, Shen X, Wang P, Fleetwood DM, Schrimpf RD, Kaun SW, Kyle ECH, Speck JS, Pantelides ST. Worst-Case Bias for Proton and 10-keV X-Ray Irradiation of AlGaN/GaN HEMTs Ieee Transactions On Nuclear Science. 64: 218-225. DOI: 10.1109/Tns.2016.2626962  0.476
2017 Xu S, Shen X, Hallman KA, Haglund RF, Pantelides ST. Unified band-theoretic description of structural, electronic, and magnetic properties of vanadium dioxide phases Physical Review B. 95: 125105. DOI: 10.1103/Physrevb.95.125105  0.456
2017 Puzyrev YS, Shen X, Zhang CX, Hachtel J, Ni K, Choi BK, Zhang E-, Ovchinnikov O, Schrimpf RD, Fleetwood DM, Pantelides ST. Memristive devices from ZnO nanowire bundles and meshes Applied Physics Letters. 111: 153504. DOI: 10.1063/1.5008265  0.477
2017 Wu K, Sun W, Jiang Y, Chen J, Li L, Cao C, Shi S, Shen X, Cui J. Structure and photoluminescence study of silicon based two-dimensional Si2Te3 nanostructures Journal of Applied Physics. 122: 75701. DOI: 10.1063/1.4998811  0.333
2017 Aloqayli S, Ranaweera CK, Wang Z, Siam K, Kahol PK, Tripathi P, Srivastava ON, Gupta BK, Mishra SR, Perez F, Shen X, Gupta RK. Nanostructured cobalt oxide and cobalt sulfide for flexible, high performance and durable supercapacitors Energy Storage Materials. 8: 68-76. DOI: 10.1016/J.Ensm.2017.05.006  0.333
2016 Turo MJ, Shen X, Brandon NK, Castillo S, Fall AM, Pantelides ST, Macdonald JE. Dual-mode crystal-bound and X-type passivation of quantum dots. Chemical Communications (Cambridge, England). 52: 12214-12217. PMID 27711381 DOI: 10.1039/C6Cc05951A  0.418
2016 Shen X, Puzyrev YS, Combs C, Pantelides ST. Variability of structural and electronic properties of bulk and monolayer Si2Te3 Applied Physics Letters. 109. DOI: 10.1063/1.4962826  0.519
2016 Jiang R, Shen X, Chen J, Duan GX, Zhang EX, Fleetwood DM, Schrimpf RD, Kaun SW, Kyle ECH, Speck JS, Pantelides ST. Degradation and annealing effects caused by oxygen in AlGaN/GaN high electron mobility transistors Applied Physics Letters. 109. DOI: 10.1063/1.4958706  0.537
2016 Leach ADP, Shen X, Faust A, Cleveland MC, La Croix AD, Banin U, Pantelides ST, Macdonald JE. Defect Luminescence from Wurtzite CuInS2 Nanocrystals: Combined Experimental and Theoretical Analysis Journal of Physical Chemistry C. 120: 5207-5212. DOI: 10.1021/Acs.Jpcc.6B00156  0.5
2016 Shen X, Pennycook TJ, Hernandez-Martin D, Pérez A, Puzyrev YS, Liu Y, te Velthuis SGE, Freeland JW, Shafer P, Zhu C, Varela M, Leon C, Sefrioui Z, Santamaria J, Pantelides ST. High On/Off Ratio Memristive Switching of Manganite/Cuprate Bilayer by Interfacial Magnetoelectricity Advanced Materials Interfaces. 3. DOI: 10.1002/Admi.201600086  0.663
2015 Puzyrev YS, Shen X, Pantelides ST. Prediction of Giant Thermoelectric Efficiency in Crystals with Interlaced Nanostructure. Nano Letters. PMID 26691292 DOI: 10.1021/Acs.Nanolett.5B03220  0.479
2015 Shen X, Puzyrev YS, Fleetwood DM, Schrimpf RD, Pantelides ST. Quantum mechanical modeling of radiation-induced defect dynamics in electronic devices Ieee Transactions On Nuclear Science. 62: 2169-2180. DOI: 10.1109/Tns.2015.2470665  0.512
2015 Duan GX, Hatchtel J, Shen X, Zhang EX, Zhang CX, Tuttle BR, Fleetwood DM, Schrimpf RD, Reed RA, Franco J, Linten D, Mitard J, Witters L, Collaert N, Chisholm MF, et al. Activation Energies for Oxide- and Interface-Trap Charge Generation Due to Negative-Bias Temperature Stress of Si-Capped SiGe-pMOSFETs Ieee Transactions On Device and Materials Reliability. 15: 352-358. DOI: 10.1109/Tdmr.2015.2442152  0.533
2015 Shen X, Dhar S, Pantelides ST. Atomic origin of high-temperature electron trapping in metal-oxide-semiconductor devices Applied Physics Letters. 106. DOI: 10.1063/1.4917528  0.539
2015 Shen X, Yin K, Puzyrev YS, Liu Y, Sun L, Li R, Pantelides ST. 2D Nanovaristors at Grain Boundaries Account for Memristive Switching in Polycrystalline BiFeO3 Advanced Electronic Materials. 1: 1500019. DOI: 10.1002/Aelm.201500019  0.475
2014 Shen X, Hernández-Pagan EA, Zhou W, Puzyrev YS, Idrobo JC, Macdonald JE, Pennycook SJ, Pantelides ST. Interlaced crystals having a perfect Bravais lattice and complex chemical order revealed by real-space crystallography. Nature Communications. 5: 5431. PMID 25394496 DOI: 10.1038/Ncomms6431  0.606
2013 Shen X, Pantelides ST. Atomic-Scale Mechanism of Efficient Hydrogen Evolution at SiC Nanocrystal Electrodes. The Journal of Physical Chemistry Letters. 4: 100-4. PMID 26291219 DOI: 10.1021/Jz301799W  0.468
2013 Shen X, Puzyrev YS, Pantelides ST. Vacancy breathing by grain boundaries - A mechanism of memristive switching in polycrystalline oxides Mrs Communications. 3: 167-170. DOI: 10.1557/Mrc.2013.32  0.444
2013 Zhang CX, Shen X, Zhang EX, Fleetwood DM, Schrimpf RD, Francis SA, Roy T, Dhar S, Ryu SH, Pantelides ST. Temperature dependence and postirradiation annealing response of the 1/f noise of 4H-SiC MOSFETs Ieee Transactions On Electron Devices. 60: 2361-2367. DOI: 10.1109/Ted.2013.2263426  0.467
2013 Zhang CX, Zhang EX, Fleetwood DM, Schrimpf RD, Dhar S, Ryu S, Shen X, Pantelides ST. Origins of Low-Frequency Noise and Interface Traps in 4H-SiC MOSFETs Ieee Electron Device Letters. 34: 117-119. DOI: 10.1109/Led.2012.2228161  0.474
2013 Shen X, Tuttle BR, Pantelides ST. Competing atomic and molecular mechanisms of thermal oxidation-SiC versus Si Journal of Applied Physics. 114. DOI: 10.1063/1.4815962  0.485
2013 Steel FM, Tuttle BR, Shen X, Pantelides ST. Effects of strain on the electrical properties of silicon carbide Journal of Applied Physics. 114. DOI: 10.1063/1.4812574  0.433
2013 Tuttle BR, Shen X, Pantelides ST. Theory of near-interface trap quenching by impurities in SiC-based metal-oxide-semiconductor devices Applied Physics Letters. 102. DOI: 10.1063/1.4798536  0.534
2012 Sharma YK, Ahyi AC, Issacs-Smith T, Shen X, Pantelides ST, Zhu X, Rozen J, Feldman LC, Williams JR, Xu Y, Garfunkel E. The effects of phosphorus at the SiO 2/4H-SiC interface Materials Science Forum. 717: 743-746. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.743  0.509
2012 Shen X, Pantelides ST. Oxidation-induced epilayer carbon di-interstitials as a major cause of endemically poor mobilities in 4H-SiC/SiO 2 structures Materials Science Forum. 717: 445-448. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.445  0.514
2012 Ramachandran V, Reed RA, Schrimpf RD, McMorrow D, Boos JB, King MP, Zhang EX, Vizkelethy G, Shen X, Pantelides ST. Single-Event Transient Sensitivity of InAlSb/InAs/AlGaSb High Electron Mobility Transistors Ieee Transactions On Nuclear Science. 59: 2691-2696. DOI: 10.1109/Tns.2012.2223716  0.47
2012 Zhang EX, Zhang CX, Fleetwod DM, Schrimpf RD, Dhar S, Ryu S, Shen X, Pantelides ST. Bias-Temperature Instabilities in 4H-SiC Metal–Oxide–Semiconductor Capacitors Ieee Transactions On Device and Materials Reliability. 12: 391-398. DOI: 10.1109/Tdmr.2012.2188404  0.484
2012 Sharma YK, Ahyi AC, Issacs-Smith T, Shen X, Pantelides ST, Zhu X, Feldman LC, Rozen J, Williams JR. Phosphorous passivation of the SiO 2/4H-SiC interface Solid-State Electronics. 68: 103-107. DOI: 10.1016/J.Sse.2011.10.030  0.542
2012 Pantelides ST, Puzyrev Y, Shen X, Roy T, Dasgupta S, Tuttle BR, Fleetwood DM, Schrimpf RD. Reliability of III-V devices - The defects that cause the trouble Microelectronic Engineering. 90: 3-8. DOI: 10.1016/J.Mee.2011.04.019  0.496
2011 Zhang CX, Zhang EX, Fleetwood DM, Schrimpf RD, Dhar S, Ryu S, Shen X, Pantelides ST. Effects of Bias on the Irradiation and Annealing Responses of 4H-SiC MOS Devices Ieee Transactions On Nuclear Science. 58: 2925-2929. DOI: 10.1109/Tns.2011.2168424  0.488
2011 DasGupta S, Shen X, Schrimpf RD, Reed RA, Pantelides ST, Fleetwood DM, Bergman JI, Brar B. Degradation in InAs–AlSb HEMTs Under Hot-Carrier Stress Ieee Transactions On Electron Devices. 58: 1499-1507. DOI: 10.1109/Ted.2011.2116157  0.524
2011 Roy T, Zhang EX, Puzyrev YS, Shen X, Fleetwood DM, Schrimpf RD, Koblmueller G, Chu R, Poblenz C, Fichtenbaum N, Suh CS, Mishra UK, Speck JS, Pantelides ST. Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors Applied Physics Letters. 99. DOI: 10.1063/1.3662041  0.498
2011 Shen X, Zhang EX, Zhang CX, Fleetwood DM, Schrimpf RD, Dhar S, Ryu S, Pantelides ST. Atomic-scale origins of bias-temperature instabilities in SiC–SiO2 structures Applied Physics Letters. 98: 063507. DOI: 10.1063/1.3554428  0.518
2011 Shen X, Pantelides ST. Identification of a major cause of endemically poor mobilities in SiC/ SiO2 structures Applied Physics Letters. 98. DOI: 10.1063/1.3553786  0.528
2010 Sun T, Shen X, Allen PB. Phonon quasiparticles and anharmonic perturbation theory tested by molecular dynamics on a model system Physical Review B. 82: 224304. DOI: 10.1103/Physrevb.82.224304  0.532
2010 Shen X, Oxley MP, Puzyrev Y, Tuttle BR, Duscher G, Pantelides ST. Excess carbon in silicon carbide Journal of Applied Physics. 108. DOI: 10.1063/1.3517142  0.482
2010 Shen X, Dasgupta S, Reed RA, Schrimpf RD, Fleetwood DM, Pantelides ST. Recoverable degradation in InAs/AlSb high-electron mobility transistors: The role of hot carriers and metastable defects in AlSb Journal of Applied Physics. 108. DOI: 10.1063/1.3505795  0.519
2010 Shen X, Small YA, Wang J, Allen PB, Fernandez-Serra MV, Hybertsen MS, Muckerman JT. Photocatalytic water oxidation at the GaN (101̄0)-water interface Journal of Physical Chemistry C. 114: 13695-13704. DOI: 10.1021/Jp102958S  0.559
2009 Thompson M, Shen X, Allen PB. Density functional calculation of electronic structure and phonon spectra of Na 2 O Physical Review B. 79: 113108. DOI: 10.1103/Physrevb.79.113108  0.531
2009 Shen X, Allen PB, Hybertsen MS, Muckerman JT. Water Adsorption on the GaN (101̅0) Nonpolar Surface The Journal of Physical Chemistry C. 113: 3365-3368. DOI: 10.1021/Jp809499D  0.501
2007 Shen X, Allen PB, Muckerman JT, Davenport JW, Zheng JC. Wire versus tube: stability of small one-dimensional ZnO nanostructures. Nano Letters. 7: 2267-71. PMID 17608442 DOI: 10.1021/Nl070788K  0.54
Show low-probability matches.