Mingmei Wang, Ph.D. - Publications
Affiliations: | 2011 | Chemical and Biological Engineering | Iowa State University, Ames, IA, United States |
Area:
Chemical EngineeringYear | Citation | Score | |||
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2017 | Wang M, Ventzek PLG, Ranjan A. Quasiatomic layer etching of silicon oxide selective to silicon nitride in topographic structures using fluorocarbon plasmas Journal of Vacuum Science and Technology. 35: 31301. DOI: 10.1116/1.4978224 | 0.306 | |||
2016 | Ranjan A, Wang M, Sherpa SD, Rastogi V, Koshiishi A, Ventzek PLG. Implementation of atomic layer etching of silicon: Scaling parameters, feasibility, and profile control Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 34. DOI: 10.1116/1.4944850 | 0.32 | |||
2015 | Ranjan A, Wang M, Sherpa S, Ventzek P. Electron energy distribution control by fiat: Breaking from the conventional flux ratio scaling rules in etch Proceedings of Spie - the International Society For Optical Engineering. 9428. DOI: 10.1117/12.2086604 | 0.346 | |||
2011 | Wang M, Kushner MJ. Modeling of implantation and mixing damage during etching of SiO2 over Si in fluorocarbon plasmas Journal of Vacuum Science and Technology. 29: 51306. DOI: 10.1116/1.3626533 | 0.45 | |||
2011 | Wang M, Foster JE, Kushner MJ. Plasma propagation through porous dielectric sheets Ieee Transactions On Plasma Science. 39: 2244-2245. DOI: 10.1109/Tps.2011.2126605 | 0.452 | |||
2010 | Wang M, Kushner MJ. High energy electron fluxes in dc-augmented capacitively coupled plasmas. II. Effects on twisting in high aspect ratio etching of dielectrics Journal of Applied Physics. 107: 23309. DOI: 10.1063/1.3290873 | 0.486 | |||
2010 | Wang M, Kushner MJ. High energy electron fluxes in dc-augmented capacitively coupled plasmas I. Fundamental characteristics Journal of Applied Physics. 107: 23308. DOI: 10.1063/1.3290870 | 0.455 | |||
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