☰

Hongping Zhao, Ph.D. - Publications

Affiliations: 
2011 Electrical Engineering Lehigh University, Bethlehem, PA, United States 
Area:
Electronics and Electrical Engineering
Tree Info Similar researchers PubMed Report error

116 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Chen Z, Zhang Y, Zhao H. Quantitative defect analysis in MOCVD GaN-on-GaN using cathodoluminescence. Optics Express. 28: 26651-26660. PMID 32906935 DOI: 10.1364/Oe.399986  0.348
2020 Zhang Y, Feng Z, Karim R, Zhao H. High-temperature low-pressure chemical vapor deposition of β-Ga2O3 Journal of Vacuum Science and Technology. 38: 50806. DOI: 10.1116/6.0000360  0.361
2020 Lee H, Zhang Y, Chen Z, Rahman MW, Zhao H, Rajan S. Design and Fabrication of Vertical GaN p-n Diode With Step-Etched Triple-Zone Junction Termination Extension Ieee Transactions On Electron Devices. 67: 3553-3557. DOI: 10.1109/Ted.2020.3007133  0.349
2020 Zhang Y, Chen Z, Li W, Lee H, Karim R, Arehart AR, Ringel SA, Rajan S, Zhao H. Probing unintentional Fe impurity incorporation in MOCVD homoepitaxy GaN: Toward GaN vertical power devices Journal of Applied Physics. 127: 215707. DOI: 10.1063/5.0008758  0.322
2020 Ghadi H, McGlone JF, Jackson CM, Farzana E, Feng Z, Bhuiyan AFMAU, Zhao H, Arehart AR, Ringel SA. Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition Apl Materials. 8: 021111. DOI: 10.1063/1.5142313  0.374
2020 Haseman MS, Karim MR, Ramdin D, Noesges BA, Feinberg E, Jayatunga BHD, Lambrecht WRL, Zhu M, Hwang J, Kash K, Zhao H, Brillson LJ. Deep level defects and cation sublattice disorder in ZnGeN2 Journal of Applied Physics. 127: 135703. DOI: 10.1063/1.5141335  0.301
2020 Karim R, Jayatunga BHD, Zhu M, Lalk RA, Licata O, Mazumder B, Hwang J, Kash K, Zhao H. Effects of cation stoichiometry on surface morphology and crystallinity of ZnGeN2 films grown on GaN by metalorganic chemical vapor deposition Aip Advances. 10: 65302. DOI: 10.1063/1.5137767  0.366
2020 Jayatunga BHD, Karim R, Lalk RA, Ohanaka O, Lambrecht WRL, Zhao H, Kash K. Metal–Organic Chemical Vapor Deposition of ZnGeGa2N4 Crystal Growth & Design. 20: 189-196. DOI: 10.1021/Acs.Cgd.9B00995  0.348
2019 Anhar Uddin Bhuiyan AFM, Feng Z, Johnson JM, Chen Z, Huang H, Hwang J, Zhao H. MOCVD epitaxy of β-(AlxGa1−x)2O3 thin films on (010) Ga2O3 substrates and N-type doping Applied Physics Letters. 115: 120602. DOI: 10.1063/1.5123495  0.317
2019 Feng Z, Anhar Uddin Bhuiyan AFM, Karim MR, Zhao H. MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties Applied Physics Letters. 114: 250601. DOI: 10.1063/1.5109678  0.381
2019 Zhang Y, Karim MR, Feng Z, Zhao H. Ultrafast growth rate and high mobility In2O3 films grown on c-sapphire via low pressure chemical vapor deposition Journal of Applied Physics. 125: 135703. DOI: 10.1063/1.5086454  0.331
2019 Feng Z, Karim MR, Zhao H. Low pressure chemical vapor deposition of β-Ga2O3thin films: Dependence on growth parameters Apl Materials. 7: 022514. DOI: 10.1063/1.5054713  0.347
2019 Karim MR, Jayatunga BHD, Feng Z, Kash K, Zhao H. Metal–Organic Chemical Vapor Deposition Growth of ZnGeN2 Films on Sapphire Crystal Growth & Design. 19: 4661-4666. DOI: 10.1021/Acs.Cgd.9B00560  0.328
2018 Keum CM, Liu S, Al-Shadeedi A, Kaphle V, Callens MK, Han L, Neyts K, Zhao H, Gather MC, Bunge SD, Twieg RJ, Jakli A, Lüssem B. Tuning charge carrier transport and optical birefringence in liquid-crystalline thin films: A new design space for organic light-emitting diodes. Scientific Reports. 8: 699. PMID 29335503 DOI: 10.1038/S41598-018-19157-9  0.487
2018 Joishi C, Rafique S, Xia Z, Han L, Krishnamoorthy S, Zhang Y, Lodha S, Zhao H, Rajan S. Low-pressure CVD-grown β-Ga2O3 bevel-field-plated Schottky barrier diodes Applied Physics Express. 11: 31101. DOI: 10.7567/Apex.11.031101  0.754
2018 Feng Z, Rafique S, Cai Y, Han L, Huang M, Zhao H. ZnO Nanowall Networks for Sensor Devices: From Hydrothermal Synthesis to Device Demonstration Ecs Journal of Solid State Science and Technology. 7: Q3114-Q3119. DOI: 10.1149/2.0221807Jss  0.706
2018 Zheng X, Lee J, Rafique S, Karim MR, Han L, Zhao H, Zorman CA, Feng PX. $\beta$ -Ga2O3 NEMS Oscillator for Real-Time Middle Ultraviolet (MUV) Light Detection Ieee Electron Device Letters. 39: 1230-1233. DOI: 10.1109/Led.2018.2850776  0.708
2018 Karim MR, Zhao H. Design of InGaN-ZnSnN2 quantum wells for high-efficiency amber light emitting diodes Journal of Applied Physics. 124: 034303. DOI: 10.1063/1.5036949  0.491
2018 Neal AT, Mou S, Rafique S, Zhao H, Ahmadi E, Speck JS, Stevens KT, Blevins JD, Thomson DB, Moser N, Chabak KD, Jessen GH. Donors and deep acceptors in β-Ga2O3 Applied Physics Letters. 113: 062101. DOI: 10.1063/1.5034474  0.742
2018 Yoo J, Rafique S, Lange A, Zhao H, Elhadj S. Lifetime laser damage performance of β-Ga2O3 for high power applications Apl Materials. 6: 36105. DOI: 10.1063/1.5021603  0.754
2018 Rafique S, Karim MR, Johnson JM, Hwang J, Zhao H. LPCVD homoepitaxy of Si doped β-Ga2O3 thin films on (010) and (001) substrates Applied Physics Letters. 112: 052104. DOI: 10.1063/1.5017616  0.751
2018 Karim MR, Feng Z, Zhao H. Low Pressure Chemical Vapor Deposition Growth of Wide Bandgap Semiconductor In2O3 Films Crystal Growth & Design. 18: 4495-4502. DOI: 10.1021/Acs.Cgd.8B00483  0.37
2018 Zheng XQ, Lee J, Rafique S, Han L, Zorman CA, Zhao H, Feng PXL. Free-Standing β-Ga 2 O 3 Thin Diaphragms Journal of Electronic Materials. 47: 973-981. DOI: 10.1007/S11664-017-5978-7  0.753
2017 Zheng XQ, Lee J, Rafique S, Han L, Zorman CA, Zhao H, Feng PX. Ultra-Wide-Bandgap β-Ga2O3 Nanomechanical Resonators with Spatially Visualized Multimode Motion. Acs Applied Materials & Interfaces. PMID 29115818 DOI: 10.1021/Acsami.7B13930  0.761
2017 Rafique S, Han L, Mou S, Zhao H. Temperature and doping concentration dependence of the energy band gap in β-Ga_2O_3 thin films grown on sapphire Optical Materials Express. 7: 3561. DOI: 10.1364/Ome.7.003561  0.754
2017 Rafique S, Han L, Zhao H. Ultra-wide bandgap beta-Ga2O3 for deep-UV solar blind photodetectors(Conference Presentation) Proceedings of Spie. 10105. DOI: 10.1117/12.2252373  0.766
2017 Zhao H, Han L. Novel device designs enabled by lattice-matched GaN-ZnGeN2 heterostructures(Conference Presentation) Proceedings of Spie. 10104. DOI: 10.1117/12.2252185  0.455
2017 Rafique S, Han L, Lee J, Zheng XQ, Zorman CA, Feng PXL, Zhao H. Synthesis and characterization of Ga2O3 nanosheets on 3C-SiC-on-Si by low pressure chemical vapor deposition Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 11208. DOI: 10.1116/1.4974158  0.749
2017 Han L, Lieberman C, Zhao H. Study of intersubband transitions in GaN-ZnGeN2 coupled quantum wells Journal of Applied Physics. 121: 093101. DOI: 10.1063/1.4977696  0.43
2017 Rafique S, Han L, Neal AT, Mou S, Boeckl J, Zhao H. Towards High-Mobility Heteroepitaxial β-Ga2 O3 on Sapphire − Dependence on The Substrate Off-Axis Angle Physica Status Solidi (a). 215: 1700467. DOI: 10.1002/Pssa.201700467  0.714
2017 Rafique S, Han L, Zhao H. Thermal annealing effect on β-Ga2 O3 thin film solar blind photodetector heteroepitaxially grown on sapphire substrate Physica Status Solidi (a). 214: 1700063. DOI: 10.1002/Pssa.201700063  0.735
2016 Rafique S, Han L, Neal AT, Mou S, Tadjer MJ, French RH, Zhao H. Heteroepitaxy of N-type β-Ga2O3 thin films on sapphire substrate by low pressure chemical vapor deposition Applied Physics Letters. 109. DOI: 10.1063/1.4963820  0.76
2016 Han L, Kash K, Zhao H. Designs of blue and green light-emitting diodes based on type-II InGaN-ZnGeN2 quantum wells Journal of Applied Physics. 120. DOI: 10.1063/1.4962280  0.478
2016 Han L, Zhao H. Interfacial structure designs with impedance-matching for ideal broadband antireflections Journal of Applied Physics. 119: 243103. DOI: 10.1063/1.4954692  0.305
2016 Rafique S, Han L, Tadjer MJ, Freitas JA, Mahadik NA, Zhao H. Homoepitaxial growth of β-Ga2O3 thin films by low pressure chemical vapor deposition Applied Physics Letters. 108. DOI: 10.1063/1.4948944  0.747
2016 Rafique S, Han L, Zhao H. Growth and Electrical Properties of Free-Standing Zinc Oxide Nanomembranes Crystal Growth and Design. 16: 1654-1661. DOI: 10.1021/Acs.Cgd.5B01738  0.761
2016 Rafique S, Han L, Zorman CA, Zhao H. Synthesis of Wide Bandgap β-Ga2O3 Rods on 3C-SiC-on-Si Crystal Growth and Design. 16: 511-517. DOI: 10.1021/Acs.Cgd.5B01562  0.744
2015 Han L, French RF, Zhao H. Surface antireflection and light extraction properties of GaN microdomes Ieee Photonics Journal. 7. DOI: 10.1109/Jphot.2015.2403353  0.426
2015 Rafique S, Han L, Zhao H. Density Controlled Growth of ZnO Nanowall−Nanowire 3D Networks Journal of Physical Chemistry C. 119: 12023-12029. DOI: 10.1021/Acs.Jpcc.5B02735  0.744
2015 Rafique S, Han L, Zhao H. Chemical vapor deposition of m-plane and c-plane InN nanowires on Si (100) substrate Journal of Crystal Growth. 415: 78-83. DOI: 10.1016/J.Jcrysgro.2014.12.039  0.737
2015 Rafique S, Han L, Zhao H. Synthesis of wide bandgap Ga2O3(Eg ∼ 4.6-4.7 eV) thin films on sapphire by low pressure chemical vapor deposition Physica Status Solidi (a). 213: 1002-1009. DOI: 10.1002/Pssa.201532711  0.748
2014 Han L, Zhao H. Surface antireflection properties of GaN nanostructures with various effective refractive index profiles. Optics Express. 22: 31907-16. PMID 25607159 DOI: 10.1364/Oe.22.031907  0.453
2014 Han L, Kash K, Zhao H. High-efficiency green light-emitting diodes based on InGaN-ZnGeN 2 type-II quantum wells Proceedings of Spie - the International Society For Optical Engineering. 9003. DOI: 10.1117/12.2038756  0.492
2013 Han L, Piedimonte TA, Zhao H. Experimental exploration of the fabrication of GaN microdome arrays based on a self-assembled approach Optical Materials Express. 3: 1093. DOI: 10.1364/Ome.3.001093  0.328
2013 Han L, McGoogan MR, Piedimonte TA, Kidd IV, French RH, Zhao H. GaN microdomes for broadband omnidirectional antireflection for concentrator photovoltaics Proceedings of Spie - the International Society For Optical Engineering. 8620. DOI: 10.1117/12.2002864  0.357
2013 Zhao P, Han L, Zhao H. Light extraction efficiency enhancement for InGaN quantum wells light-emitting diodes with GaN micro-domes Proceedings of Spie. 8641: 864117. DOI: 10.1117/12.2002857  0.448
2013 Sun G, Chen R, Ding YJ, Zhao H, Liu G, Zhang J, Tansu N. Strikingly Different Behaviors of Photoluminescence and Terahertz Generation in InGaN/GaN Quantum Wells Ieee Journal of Selected Topics in Quantum Electronics. 19: 8400106-8400106. DOI: 10.1109/Jstqe.2012.2218093  0.717
2013 Zhao H, Jiao X, Tansu N. Analysis of interdiffused InGaN quantum wells for visible light-emitting diodes Ieee/Osa Journal of Display Technology. 9: 199-206. DOI: 10.1109/Jdt.2013.2250480  0.646
2013 Zhao H, Liu G, Zhang J, Arif RA, Tansu N. Analysis of internal quantum efficiency and current injection efficiency in III-nitride light-emitting diodes Ieee/Osa Journal of Display Technology. 9: 212-225. DOI: 10.1109/Jdt.2013.2250252  0.807
2013 Xu G, Sun G, Ding YJ, Zhao H, Liu G, Zhang J, Tansu N. Investigation of large Stark shifts in InGaN/GaN multiple quantum wells Journal of Applied Physics. 113. DOI: 10.1063/1.4775605  0.709
2013 Sun G, Chen R, Ding YJ, Zhao H, Liu G, Zhang J, Tansu N. Complementing trends of photoluminescence and terahertz intensities in staggered InGaN quantum wells 2013 Conference On Lasers and Electro-Optics, Cleo 2013.  0.597
2012 Zhao P, Zhao H. Analysis of light extraction efficiency enhancement for thin-film-flip-chip InGaN quantum wells light-emitting diodes with GaN micro-domes. Optics Express. 20: A765-76. PMID 23037543 DOI: 10.1364/Oe.20.00A765  0.458
2012 Zhao P, Han L, McGoogan MR, Zhao H. Analysis of TM mode light extraction efficiency enhancement for deep ultraviolet AlGaN quantum wells light-emitting diodes with III-nitride micro-domes Optical Materials Express. 2: 1397. DOI: 10.1364/Ome.2.001397  0.458
2012 Liu G, Zhang J, Zhao H, Tansu N. Device characteristics of InGaN quantum well light-emitting diodes with AlInN thin barrier insertion Proceedings of Spie - the International Society For Optical Engineering. 8262. DOI: 10.1117/12.909633  0.738
2012 Liu G, Zhang J, Li XH, Huang GS, Paskova T, Evans KR, Zhao H, Tansu N. Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates Journal of Crystal Growth. 340: 66-73. DOI: 10.1016/J.Jcrysgro.2011.12.037  0.683
2012 Sun G, Chen R, Ding YJ, Zhao H, Liu G, Zhang J, Tansu N. Strikingly different behaviors of photoluminescence intensity and terahertz output power versus period of InGaN/GaN quantum wells 2012 Conference On Lasers and Electro-Optics, Cleo 2012.  0.579
2012 Tansu N, Zhang J, Liu G, Zhao H, Tan CK, Zhu P. Physics of high-Efficiency III-Nitride quantum wells light-Emitting diodes Asia Communications and Photonics Conference, Acp 2012.  0.818
2012 Zhao H, Jiao X, Tansu N. Analysis of position and thickness dependences of delta layer in InGaN-delta-InN quantum wells light-emitting diodes Asia Communications and Photonics Conference, Acp.  0.594
2011 Zhao H, Liu G, Zhang J, Poplawsky JD, Dierolf V, Tansu N. Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells. Optics Express. 19: A991-A1007. PMID 21747571 DOI: 10.1364/Oe.19.00A991  0.754
2011 Liu G, Zhao H, Zhang J, Park JH, Mawst LJ, Tansu N. Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography. Nanoscale Research Letters. 6: 342. PMID 21711862 DOI: 10.1186/1556-276X-6-342  0.783
2011 Tansu N, Zhao H, Zhang J, Liu G, Li XH, Ee YK, Song R, Toma T, Zhao L, Huang GS. Novel approaches for high-efficiency InGaN quantum wells light-emitting diodes: Device physics and epitaxy engineering Proceedings of Spie - the International Society For Optical Engineering. 7954. DOI: 10.1117/12.875901  0.825
2011 Zhang J, Zhao H, Tansu N. Gain characteristics of deep UV AlGaN quantum wells lasers Proceedings of Spie - the International Society For Optical Engineering. 7953. DOI: 10.1117/12.875079  0.661
2011 Liu G, Zhao H, Zhang J, Park JH, Mawst LJ, Tansu N. Selective area epitaxy of ultra-high density InGaN based quantum dots 2011 Ieee Winter Topicals, Wtm 2011. 35-36. DOI: 10.1109/PHOTWTM.2011.5730033  0.681
2011 Zhao H, Zhang J, Liu G, Toma T, Poplawsky JD, Dierolf V, Tansu N. Cathodoluminescence characteristics of linearly shaped staggered InGaN quantum wells light-emitting diodes Proceedings of Spie - the International Society For Optical Engineering. 7939. DOI: 10.1109/Photonics.2010.5698996  0.748
2011 Tansu N, Zhang J, Zhao H. Physics of novel III-nitride gain media for visible and ultraviolet lasers Ieee Photonic Society 24th Annual Meeting, Pho 2011. 509-510. DOI: 10.1109/Pho.2011.6110645  0.62
2011 Sun G, Xu G, Ding YJ, Zhao H, Liu G, Zhang J, Tansu N. Efficient Terahertz Generation Within InGaN/GaN Multiple Quantum Wells Ieee Journal of Selected Topics in Quantum Electronics. 17: 48-53. DOI: 10.1109/Jstqe.2010.2049343  0.711
2011 Sun G, Xu G, Ding YJ, Zhao H, Liu G, Zhang J, Tansu N. Investigation of fast and slow decays in InGaN/GaN quantum wells Applied Physics Letters. 99: 081104. DOI: 10.1063/1.3627166  0.708
2011 Zhang J, Zhao H, Tansu N. Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes Applied Physics Letters. 98. DOI: 10.1063/1.3583442  0.662
2011 Zhao H, Zhang J, Liu G, Tansu N. Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes Applied Physics Letters. 98. DOI: 10.1063/1.3580628  0.684
2011 Zhang J, Zhao H, Tansu N. High TE-Polarized optical gain from AlGaN-delta-GaN quantum well for deep UV lasers Optics Infobase Conference Papers.  0.621
2011 Xu G, Sun G, Ding YJ, Zhao H, Liu G, Zhang J, Tansu N. Investigation of blueshift of photoluminescence emission peak in InGaN/GaN Multiple Quantum Wells Optics Infobase Conference Papers.  0.588
2011 Sun G, Xu G, Ding YJ, Zhao H, Liu G, Zhang J, Tansu N. High-power terahertz generation due to dipole radiation within InGaN/GaN multiple quantum wells Optics Infobase Conference Papers.  0.56
2011 Liu G, Zhao H, Zhang J, Tansu N. Growths of InGaN-based light-emitting diodes with AlInN thin barrier for efficiency droop suppression Optics Infobase Conference Papers.  0.61
2011 Zhao H, Zhang J, Liu G, Tansu N. Surface plasmon dispersion engineering via double-metallic Au / Ag layers for nitride light-emitting diodes 2011 Conference On Lasers and Electro-Optics: Laser Science to Photonic Applications, Cleo 2011.  0.557
2010 Liu G, Zhao H, Tansu N. Electron-photon and electron-LO phonon intersubband scattering rates in GaN/AlN quantum wells Proceedings of Spie - the International Society For Optical Engineering. 7597. DOI: 10.1117/12.843054  0.593
2010 Li XH, Tong H, Zhao H, Tansu N. Band structure calculation of dilute-As GaNAs by first principle Proceedings of Spie - the International Society For Optical Engineering. 7597. DOI: 10.1117/12.842931  0.495
2010 Zhao H, Liu G, Ee YK, Li XH, Tong H, Zhang J, Huang GS, Tansu N. Novel device concepts for high-efficiency InGaN-based light-emitting diodes Proceedings of Spie - the International Society For Optical Engineering. 7602. DOI: 10.1117/12.842869  0.815
2010 Zhao H, Liu G, Tansu N. Surface plasmon dispersion engineering via double-metallic Au/Ag layers for nitride light-emitting diodes Proceedings of Spie - the International Society For Optical Engineering. 7617. DOI: 10.1117/12.842742  0.532
2010 Liu G, Zhao H, Zhang J, Tong H, Huang GS, Tansu N. Growths of lattice-matched AlInN / GaN for optoelectronics applications 2010 23rd Annual Meeting of the Ieee Photonics Society, Photinics 2010. 534-535. DOI: 10.1109/Photonics.2010.5698997  0.71
2010 Zhao H, Zhang J, Toma T, Liu G, Poplawsky JD, Dierolf V, Tansu N. Cathodoluminescence characteristics of linearly-shaped staggered InGaN quantum wells light-emitting diodes 2010 23rd Annual Meeting of the Ieee Photonics Society, Photinics 2010. 532-533. DOI: 10.1109/PHOTONICS.2010.5698996  0.712
2010 Zhang J, Zhao H, Tansu N. Gain and spontaneous emission characteristics of high Al-content AlGaN quantum well lasers 2010 23rd Annual Meeting of the Ieee Photonics Society, Photinics 2010. 63-64. DOI: 10.1109/Photonics.2010.5698758  0.65
2010 Tansu N, Zhao H, Liu G, Li XH, Zhang J, Tong H, Ee YK. III-nitride photonics Ieee Photonics Journal. 2: 236-243. DOI: 10.1109/Jphot.2010.2045887  0.798
2010 Xu G, Ding YJ, Zhao H, Liu G, Jamil M, Tansu N, Zotova IB, Stutz CE, Diggs DE, Fernelius N, Hopkins FK, Gallinat CS, Koblmüller G, Speck JS. THz generation from InN films due to destructive interference between optical rectification and photocurrent surge Semiconductor Science and Technology. 25. DOI: 10.1088/0268-1242/25/1/015004  0.74
2010 Zhao H, Liu G, Tansu N. Analysis of InGaN-delta-InN quantum wells for light-emitting diodes Applied Physics Letters. 97. DOI: 10.1063/1.3493188  0.724
2010 Zhang J, Zhao H, Tansu N. Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers Applied Physics Letters. 97. DOI: 10.1063/1.3488825  0.65
2010 Sun G, Ding YJ, Liu G, Huang GS, Zhao H, Tansu N, Khurgin JB. Photoluminescence emission in deep ultraviolet region from GaN/AlN asymmetric-coupled quantum wells Applied Physics Letters. 97. DOI: 10.1063/1.3462324  0.727
2010 Zhao H, Tansu N. Optical gain characteristics of staggered InGaN quantum wells lasers Journal of Applied Physics. 107. DOI: 10.1063/1.3407564  0.667
2010 Zhao H, Liu G, Arif RA, Tansu N. Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes Solid-State Electronics. 54: 1119-1124. DOI: 10.1016/j.sse.2010.05.019  0.764
2010 Zhao H, Liu G, Li XH, Ee YK, HuaTong, Zhang J, Huang GS, Tansu N. Novel growth and device concepts for high-efficiency InGaN quantum wells light-emitting diodes Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, Cleo/Qels 2010.  0.748
2010 Liu G, Zhao H, Park JH, Mawst LJ, Tansu N. Growths of ultra high density ingan-based quantum dots on self-assembled diblock copolymer nanopatterns Optics Infobase Conference Papers.  0.67
2009 Zhao H, Arif RA, Tansu N. Staggered InGaN quantum well diode lasers emitting at 500 nm Proceedings of Spie - the International Society For Optical Engineering. 7230. DOI: 10.1117/12.808561  0.78
2009 Zhao H, Liu G, Li X, Arif RA, Huang GS, Ee YK, Tansu N. Growth of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded temperature profile Proceedings of Spie - the International Society For Optical Engineering. 7231. DOI: 10.1117/12.808542  0.837
2009 Zhao H, Arif RA, Tansu N. Design analysis of staggered InGaN quantum wells light-emitting diodes at 500540 nm Ieee Journal On Selected Topics in Quantum Electronics. 15: 1104-1114. DOI: 10.1109/Jstqe.2009.2016576  0.79
2009 Ee YK, Kumnorkaew P, Arif RA, Tong H, Zhao H, Gilchrist JF, Tansu N. Optimization of light extraction efficiency of III-nitride LEDs with self-assembled colloidal-based microlenses Ieee Journal On Selected Topics in Quantum Electronics. 15: 1218-1225. DOI: 10.1109/Jstqe.2009.2015580  0.795
2009 Zhao H, Arif RA, Ee YK, Tansu N. Self-cnsistent analysis of strain-compensated InGaN-AlGaN quantum wells for lasers and light-emitting diodes Ieee Journal of Quantum Electronics. 45: 66-78. DOI: 10.1109/Jqe.2008.2004000  0.826
2009 Zhao H, Liu G, Arif RA, Tansu N. Effect of current injection efficiency on efficiency-droop in InGaN quantum well light-emitting diodes 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378014  0.764
2009 Zhao H, Huang GS, Liu G, Li X, Poplawsky JD, Penn ST, Dierolf V, Tansu N. Characteristics of staggered InGaN quantum wells light-emitting diodes emitting at 480-525 nm Device Research Conference - Conference Digest, Drc. 221-222. DOI: 10.1109/DRC.2009.5354899  0.64
2009 Zhao H, Liu G, Li XH, Huang GS, Poplawsky JD, Penn ST, Dierolf V, Tansu N. Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded growth-temperature profile Applied Physics Letters. 95. DOI: 10.1063/1.3204446  0.799
2009 Zhao HP, Liu GY, Li XH, Arif RA, Huang GS, Poplawsky JD, Tafon Penn S, Dierolf V, Tansu N. Design and characteristics of staggered InGaN quantum-well light-emitting diodes in the green spectral regime Iet Optoelectronics. 3: 283-295. DOI: 10.1049/Iet-Opt.2009.0050  0.804
2009 Zhao H, Liu G, Li X, Huang GS, Penn ST, Dierolf V, Tansu N. Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded-temperature profile 2009 Conference On Lasers and Electro-Optics and 2009 Conference On Quantum Electronics and Laser Science Conference, Cleo/Qels 2009.  0.646
2008 Tansu N, Arif RA, Zhao H, Huang GS, Ee YK. Polarization engineering of III-nitride nanostructures for high-efficiency light emitting diodes Proceedings of Spie - the International Society For Optical Engineering. 7058. DOI: 10.1117/12.802482  0.848
2008 Zhao H, Arif RA, Ee YK, Tansu N. Optical gain and spontaneous emission of strain-compensated InGaN-AlGaN quantum wells including carrier screening effect Proceedings of Spie - the International Society For Optical Engineering. 6889. DOI: 10.1117/12.763804  0.815
2008 Arif RA, Zhao H, Ee YK, Tansu N. Radiative efficiency and spontaneous recombination rate of staggered InGaN quantum well LED at 420-510 nm Proceedings of Spie - the International Society For Optical Engineering. 6910. DOI: 10.1117/12.763362  0.837
2008 Arif RA, Zhao H, Ee YK, Tansu N. Spontaneous emission and characteristics of staggered InGaN quantum-well light-emitting diodes Ieee Journal of Quantum Electronics. 44: 573-580. DOI: 10.1109/Jqe.2008.918309  0.841
2008 Tansu N, Zhao H, Arif RA, Ee YK, Liu G, Li X, Huang GS. Polarization engineering of ingan-based nanostructures for low-threshold diode lasers and high-efficiency light emitting diodes 2008 Ieee Photonicsglobal At Singapore, Ipgc 2008. DOI: 10.1109/IPGC.2008.4781335  0.831
2008 Arif RA, Zhao H, Tansu N. InGaN-GaNAs type-II 'W' quantum well lasers for emission at 450-nm Optics Infobase Conference Papers. DOI: 10.1109/CLEO.2008.4551201  0.767
2008 Zhao H, Arif RA, Huang GS, Ee YK, Tansu N. Self-consistent optical gain analysis and epitaxy of strain-compensated InGaN-AlGaN quantum wells for laser applications 2008 Conference On Quantum Electronics and Laser Science Conference On Lasers and Electro-Optics, Cleo/Qels. DOI: 10.1109/CLEO.2008.4551199  0.818
2008 Arif RA, Zhao H, Ee YK, Penn ST, Dierolf V, Tansu N. Spontaneous recombination rate and luminescence efficiency of staggered InGaN quantum wells light emitting diodes 2008 Conference On Quantum Electronics and Laser Science Conference On Lasers and Electro-Optics, Cleo/Qels. DOI: 10.1109/CLEO.2008.4551108  0.835
2008 Zhao H, Arif RA, Tansu N. Self-consistent gain analysis of type-II 'W' InGaN-GaNAs quantum well lasers Journal of Applied Physics. 104. DOI: 10.1063/1.2970107  0.775
2008 Arif RA, Zhao H, Tansu N. Type-II InGaN-GaNAs quantum wells for lasers applications Applied Physics Letters. 92. DOI: 10.1063/1.2829600  0.768
2008 Jamil M, Zhao H, Higgins JB, Tansu N. Influence of growth temperature and V/III ratio on the optical characteristics of narrow band gap (0.77 eV) InN grown on GaN/sapphire using pulsed MOVPE Journal of Crystal Growth. 310: 4947-4953. DOI: 10.1016/J.Jcrysgro.2008.07.122  0.666
2008 Ee YK, Zhao H, Arif RA, Jamil M, Tansu N. Self-assembled InGaN quantum dots on GaN emitting at 520 nm grown by metalorganic vapor-phase epitaxy Journal of Crystal Growth. 310: 2320-2325. DOI: 10.1016/J.Jcrysgro.2007.12.022  0.828
2008 Zhao H, Arif RA, Ee YK, Tansu N. Optical gain analysis of strain-compensated InGaN-AlGaN quantum well active regions for lasers emitting at 420-500 nm Optical and Quantum Electronics. 40: 301-306. DOI: 10.1007/S11082-007-9177-2  0.819
2008 Jamil M, Zhao H, Higgins JB, Tansu N. MOVPE and photoluminescence of narrow band gap (0.77 eV) InN on GaN/sapphire by pulsed growth mode Physica Status Solidi (a) Applications and Materials Science. 205: 2886-2891. DOI: 10.1002/Pssa.200824136  0.67
2007 Zhao H, Arif RA, Ee YK, Tansu N. Optical gain analysis of strain compensated InGaN-AlGaN quantum well active regions for lasers emitting at 420-500 nm 2007 International Conference On Numerical Simulation of Semiconductor Optoelectronic Devices - Nusod'07. 69-70. DOI: 10.1109/NUSOD.2007.4349028  0.823
2007 Zhao H, Arif RA, Ee YK, Tansu N. Optical gain analysis of staggered InGaN quantum well active regions for lasers emitting at 420-500 nm Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 376-377. DOI: 10.1109/LEOS.2007.4382435  0.83
Show low-probability matches.