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Rajat Sharma, Ph.D. - Publications

Affiliations: 
2006 University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Materials Science Engineering
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28 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2008 Ikeda H, Okamura T, Matsukawa K, Sota T, Sugawara M, Hoshi T, Cantu P, Sharma R, Kaeding JF, Keller S, Mishra UK, Kosaka K, Asai K, Sumiya S, Shibata T, et al. Erratum: “Impact of strain on free-exciton resonance energies in wurtzite AlN” [J. Appl. Phys. 102, 123707 (2007)] Journal of Applied Physics. 103: 89901. DOI: 10.1063/1.2903974  0.743
2008 Hoshi T, Koyama T, Sugawara M, Uedono A, Kaeding JF, Sharma R, Nakamura S, Chichibu SF. Correlation between the violet luminescence intensity and defect density in AlN epilayers grown by ammonia-source molecular beam epitaxy Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 2129-2132. DOI: 10.1002/Pssc.200778473  0.775
2007 Ikeda H, Okamura T, Matsukawa K, Sota T, Sugawara M, Hoshi T, Cantu P, Sharma R, Kaeding JF, Keller S, Mishra UK, Kosaka K, Asai K, Sumiya S, Shibata T, et al. Impact of strain on free-exciton resonance energies in wurtzite AlN Journal of Applied Physics. 102. DOI: 10.1063/1.2825577  0.762
2007 Sharma R, Choi YS, Wang CF, David A, Weisbuch C, Nakamura S, Hu EL. Gallium-nitride-based microcavity light-emitting diodes with air-gap distributed Bragg reflectors Applied Physics Letters. 91. DOI: 10.1063/1.2805028  0.472
2007 Koyama T, Sugawara M, Hoshi T, Uedono A, Kaeding JF, Sharma R, Nakamura S, Chichibu SF. Relation between Al vacancies and deep emission bands in AlN epitaxial films grown by N H3 -source molecular beam epitaxy Applied Physics Letters. 90. DOI: 10.1063/1.2748315  0.776
2007 Pattison PM, David A, Sharma R, Weisbuch C, DenBaars S, Nakamura S. Gallium nitride based microcavity light emitting diodes with 2λ effective cavity thickness Applied Physics Letters. 90. DOI: 10.1063/1.2430913  0.81
2007 Tamboli AC, Haberer ED, Sharma R, Lee KH, Nakamura S, Hu EL. Room-temperature continuous-wave lasing in GaNInGaN microdisks Nature Photonics. 1: 61-64. DOI: 10.1038/Nphoton.2006.52  0.449
2006 Diana FS, David A, Meinel I, Sharma R, Weisbuch C, Nakamura S, Petroff PM. Photonic crystal-assisted light extraction from a colloidal quantum dot/GaN hybrid structure. Nano Letters. 6: 1116-20. PMID 16771564 DOI: 10.1021/Nl060535B  0.41
2006 Choi YS, Meier C, Sharma R, Hennessy K, Haberer ED, Nakamura S, Hu EL. Optical properties of GaN photonic crystal membrane nanocavities at blue wavelengths Materials Research Society Symposium Proceedings. 892: 491-496. DOI: 10.1557/Proc-0892-Ff20-06  0.491
2006 Sharma R, Pattison PM, Baker TJ, Haskell BA, Farrell RM, Masui H, Wu F, Denbaars SP, Speck JS, Nakamura S. A semipolar (101̄ 3̄) InGaN/GaN green light emitting diode Materials Research Society Symposium Proceedings. 892: 465-470. DOI: 10.1557/Proc-0892-Ff19-02  0.803
2006 Masui H, Baker TJ, Sharma R, Pattison PM, Iza M, Zhong H, Nakamura S, DenBaars SP. First-moment analysis of polarized light emission from InGaN/GaN light-emitting diodes prepared on semipolar planes Japanese Journal of Applied Physics, Part 2: Letters. 45. DOI: 10.1143/Jjap.45.L904  0.773
2006 David A, Fujii T, Sharma R, McGroddy K, Nakamura S, Denbaars SP, Hu EL, Weisbuch C, Benisty H. Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution Applied Physics Letters. 88. DOI: 10.1063/1.2171475  0.418
2006 David A, Fujii T, Matioli E, Sharma R, Nakamura S, DenBaars SP, Weisbuch C, Benisty H. GaN light-emitting diodes with Archimedean lattice photonic crystals Applied Physics Letters. 88: 73510. DOI: 10.1063/1.2168673  0.369
2006 Meier C, Hennessy K, Haberer ED, Sharma R, Choi YS, McGroddy K, Keller S, DenBaars SP, Nakamura S, Hu EL. Visible resonant modes in GaN-based photonic crystal membrane cavities Applied Physics Letters. 88: 1-3. DOI: 10.1063/1.2166680  0.411
2006 Hashimoto T, Fujito K, Sharma R, Letts ER, Fini PT, Speck JS, Nakamura S. Phase selection of microcrystalline GaN synthesized in supercritical ammonia Journal of Crystal Growth. 291: 100-106. DOI: 10.1016/J.Jcrysgro.2006.02.031  0.742
2006 Pattison PM, Sharma R, David A, Waki I, Weisbuch C, Nakamura S. Gallium nitride based micro-cavity light emitting diodes emitting at 498 nm Physica Status Solidi (a) Applications and Materials Science. 203: 1783-1786. DOI: 10.1002/Pssa.200565408  0.799
2006 Koyama T, Sugawara M, Uchinuma Y, Kaeding JF, Sharma R, Onuma T, Nakamura S, Chichibu SF. Strain-relaxation in NH 3-source molecular beam epitaxy of AlN epilayers on GaN epitaxial templates Physica Status Solidi (a) Applications and Materials Science. 203: 1603-1606. DOI: 10.1002/Pssa.200565289  0.783
2005 Choi YS, Hennessy K, Sharma R, Haberer E, Gao Y, Denbaars SP, Nakamura S, Hu EL, Meier C. GaN blue photonic crystal membrane nanocavities Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2147713  0.373
2005 Sharma R, Pattison PM, Masui H, Farrell RM, Baker TJ, Haskell BA, Wu F, Denbaars SP, Speck JS, Nakamura S. Demonstration of a semipolar (10 1- 3-) InGaN/GaN green light emitting diode Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2139841  0.793
2005 David A, Meier C, Sharma R, Diana FS, Denbaars SP, Hu E, Nakamura S, Weisbuch C, Benisty H. Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction Applied Physics Letters. 87. DOI: 10.1063/1.2039987  0.43
2005 Haberer ED, Meier C, Sharma R, Stonas AR, DenBaars SP, Nakamura S, Hu EL. Observation of high Q resonant modes in optically pumped GaN/InGaN microdisks fabricated using photoelectrochemical etching Physica Status Solidi C: Conferences. 2: 2845-2848. DOI: 10.1002/Pssc.200461505  0.468
2004 Gao Y, Fujii T, Sharma R, Fujito K, Denbaars SP, Nakamura S, Hu EL. Roughening Hexagonal Surface Morphology on Laser Lift-Off (LLO) N-Face GaN with Simple Photo-Enhanced Chemical Wet Etching Japanese Journal of Applied Physics. 43: 637. DOI: 10.1143/Jjap.43.L637  0.472
2004 Fujii T, David A, Schwach C, Pattison PM, Sharma R, Fujito K, Margalith T, Denbaars SP, Weisbuch C, Nakamura S. Micro cavity effect in GaN-based light-emitting diodes formed by laser lift-off and etch-back technique Japanese Journal of Applied Physics, Part 2: Letters. 43: L411-L413. DOI: 10.1143/Jjap.43.L411  0.785
2004 Koida T, Uchinuma Y, Kikuchi J, Wang KR, Terazaki M, Onuma T, Keading JF, Sharma R, Nakamura S, Chichibu SF. Improved surface morphology in GaN homoepitaxy by NH3-source molecular-beam epitaxy Journal of Vacuum Science & Technology B. 22: 2158-2164. DOI: 10.1116/1.1775202  0.448
2004 Wu Y, Hanlon A, Kaeding JF, Sharma R, Fini PT, Nakamura S, Speck JS. Effect of nitridation on polarity, microstructure, and morphology of AlN films Applied Physics Letters. 84: 912-914. DOI: 10.1063/1.1646222  0.747
2004 Fujii T, Gao Y, Sharma R, Hu EL, DenBaars SP, Nakamura S. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening Applied Physics Letters. 84: 855-857. DOI: 10.1063/1.1645992  0.402
2004 Kaeding JF, Wu Y, Fujii T, Sharma R, Fini PT, Speck JS, Nakamura S. Growth and laser-assisted liftoff of low dislocation density AlN thin films for deep-UV light-emitting diodes Journal of Crystal Growth. 272: 257-263. DOI: 10.1016/J.Jcrysgro.2004.08.132  0.778
2003 Hanlon A, Pattison PM, Kaeding JF, Sharma R, Fini P, Nakamura S. 292 nm AlGaN single-quantum well light emitting diodes grown on transparent AlN base Japanese Journal of Applied Physics, Part 2: Letters. 42: L628-L630. DOI: 10.1143/Jjap.42.L628  0.765
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