| Year |
Citation |
Score |
| 2007 |
Ryu H, Kim CR, Lee J, Leem JY, Sadwick LP, Stringfellow GB. Chemical beam epitaxial growth of InP and GaP by using tertiarybutylbis (dimethylamino) phosphine Journal of the Korean Physical Society. 51: 2051-2055. DOI: 10.3938/Jkps.51.2051 |
0.519 |
|
| 2006 |
Ryu HH, Jeon MH, Leem JY, Song HJ, Sadwick LP, Stringfellow GB. Chemical beam epitaxial growth of GaInP using uncracked trisdimethylaminophosphine Journal of Materials Science. 41: 8265-8270. DOI: 10.1007/S10853-006-0998-3 |
0.486 |
|
| 2006 |
Wang X, Sadwick LP. Kirchoff's law analysis of GaAs MESFETs and related devices at high temperatures Proceedings - 2006 Imaps International Conference and Exhibition On High Temperature Electronics, Hitec 2006. 187-193. |
0.327 |
|
| 2006 |
Sadwick LP, Chern JH, Hwu RJ, Del Castillo L, Johnson TW, Mojarradi MM. SSVDs: 500°C electronics for extreme environmental applications Proceedings - 2006 Imaps International Conference and Exhibition On High Temperature Electronics, Hitec 2006. 536-542. |
0.338 |
|
| 2006 |
Sadwick LP, Chern JH, Nelson R, Hwu RJ. A 500°C electronic package technology for continuous operation in extreme environments Proceedings - 2006 Imaps International Conference and Exhibition On High Temperature Electronics, Hitec 2006. 377-379. |
0.31 |
|
| 2006 |
Wang X, Sadwick LP. A room temperature to 300°C enhanced curtice model with general applicability to field effect transistors Proceedings - 2006 Imaps International Conference and Exhibition On High Temperature Electronics, Hitec 2006. 194-201. |
0.305 |
|
| 2006 |
Wang X, Sadwick LP. High temperature simulation of and comparison with experimental data of the electrically thermally enhanced substrate leakage In GaAs MESFETs Proceedings - 2006 Imaps International Conference and Exhibition On High Temperature Electronics, Hitec 2006. 339-344. |
0.328 |
|
| 2003 |
Ryu HH, Choi HL, Sadwick LP. Effects of cracker cell temperature and V/III ratio on GaInP grown by chemical beam epitaxy using TIPGa, EDMIn and TBP Journal of Materials Science. 38: 3663-3668. DOI: 10.1023/A:1025693818147 |
0.487 |
|
| 2003 |
Lin CH, Hwu RJ, Sadwick LP. Formation of microtwins in TmP/GaAs heterostructures Journal of Crystal Growth. 247: 77-83. DOI: 10.1016/S0022-0248(02)01947-4 |
0.42 |
|
| 2001 |
Lin CH, Hwu RJ, Sadwick LP, Heo D. Molecular beam epitaxy growth of TmP/GaAs and transistor action in GaP/TmP/GaAs heterostructures Ieee Transactions On Electron Devices. 48: 2205-2209. DOI: 10.1109/16.954455 |
0.591 |
|
| 2001 |
Lin CH, Hwu RJ, Sadwick LP. Transistor action in GaP/TmP/GaAs heterostructure Electronics Letters. 37: 1142-1143. DOI: 10.1049/El:20010771 |
0.483 |
|
| 2001 |
Lin CH, Hwu RJ, Sadwick LP. Investigation of crystal properties of TmP/GaAs and GaAs/TmP/GaAs heterostructures grown by molecular beam epitaxy Journal of Materials Research. 16: 3266-3273. |
0.35 |
|
| 1999 |
Narasimhan R, Sadwick LP, Hwu RJ. Enhancement of high-temperature high-frequency performance of GaAs-based FET's by the high-temperature electronic technique Ieee Transactions On Electron Devices. 46: 24-31. DOI: 10.1109/16.737437 |
0.402 |
|
| 1999 |
Lee PP, Hwu RJ, Sadwick LP, Kumar BR, Chern JH, Lin CH, Balasubramaniam H. Contacts to GaAs, InP, and GaP for high-temperature and high-power applications Proceedings of Spie - the International Society For Optical Engineering. 3795: 217-222. |
0.343 |
|
| 1998 |
Lee PP, Chern JH, Sadwick LP, Hwu RJ, Balasubramaniam H, Kumar BR, Alvis R, Lareau RL, Streit DC, Block T. Growth and characterization of rare-earth phosphide/arsenide Schottky contacts to GaAs Materials Research Society Symposium - Proceedings. 514: 453. DOI: 10.1557/Proc-514-453 |
0.521 |
|
| 1998 |
Lee PP, Hwu RJ, Sadwick LP, Balasubramaniam H, Kumar BR, Chern JH, Lareau RT. Growth and characterization of DyP/GaAs and DyAs/GaAs-based heterostructures and superlattices Physica E: Low-Dimensional Systems and Nanostructures. 2: 358-362. DOI: 10.1016/S1386-9477(98)00075-7 |
0.508 |
|
| 1998 |
Lee PP, Hwu RJ, Sadwick LP, Balasubramaniam H, Kumar BR, Alvis R, Lareau RT, Wood MC. Epitaxial growth and characterization of DyP/GaAs, DyAs/GaAs, and GaAs/DyP/GaAs heterostructures Journal of Electronic Materials. 27: 405-408. DOI: 10.1007/S11664-998-0168-2 |
0.557 |
|
| 1998 |
Lee PP, Hwu RJ, Sadwick LP, Balasubramaniam H, Kumar BR, Lai TC, Chu SNG, Alvis R, Lareau RT, Wood MC. Molecular beam epitaxy growth and characterization of DyP/GaAs, DyAs/GaAs, GaAs/DyP/GaAs, and GaAs/DyAs/GaAs heterostructures Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 1467-1470. |
0.492 |
|
| 1997 |
Hill CW, Stringfellow GB, Sadwick LP. A comparison of the reactions of phosphorus precursors on deposited GaP and InP films Journal of Crystal Growth. 181: 321-325. DOI: 10.1016/S0022-0248(97)00306-0 |
0.39 |
|
| 1997 |
Ryu HH, Sadwick LP, Stringfellow GB, Gedridge RW, Groshens TJ. Chemical beam epitaxy of InP without precracking using tertiarybutylbis(dimethylamino) phosphine Journal of Crystal Growth. 172: 1-4. DOI: 10.1016/S0022-0248(96)00422-8 |
0.513 |
|
| 1997 |
Kim CW, Sadwick LP, Stringfellow GB. Chemical beam epitaxial growth of InP using EDMIn and BPE Journal of Electronic Materials. 26: 355-360. DOI: 10.1007/S11664-997-0101-0 |
0.501 |
|
| 1996 |
Kim CW, Stringfellow GB, Sadwick LP. CBE growth of InP using BPE and TBP: A comparative study Journal of Crystal Growth. 164: 104-111. DOI: 10.1016/0022-0248(96)00033-4 |
0.494 |
|
| 1996 |
Sadwick LP, Lee PP, Patel M, Nikols M, Hwu RJ, Shield JE, Streit DC, Brehmer D, McCormick K, Allen SJ, Gedridge RW. Epitaxial dysprosium phosphide grown by gas-source and solid-source MBE on gallium arsenide substrates Journal of Crystal Growth. 164: 285-290. DOI: 10.1016/0022-0248(95)01017-3 |
0.504 |
|
| 1994 |
Sadwick LP, Kim CW, Ryu HH, Hill CW, Stringfellow GB, Gedridge RW, Jones AC. Chemical beam epitaxial growth of GaP and InP using alternative, safer precursors Materials Research Society Symposium - Proceedings. 340: 167-172. DOI: 10.1557/Proc-340-167 |
0.48 |
|
| 1994 |
Sadwick LP. Thermal currents in proton isolated gallium arsenide structures at elevated temperatures Applied Physics Letters. 64: 79-81. DOI: 10.1063/1.110874 |
0.304 |
|
| 1992 |
Sadwick LP, Kim CW, Hwu RJ, Streit DC, Jones WL. Device and material properties of pseudomorphic HEMT structures subjected to rapid thermal annealing Ieee Transactions On Electron Devices. 39: 50-55. DOI: 10.1109/16.108211 |
0.476 |
|
| 1991 |
Streit DC, Jones WL, Sadwick LP, Kim CW, Hwu RJ. Effect of rapid thermal annealing on planar-doped pseudomorphic InGaAs high electron mobility transistor structures Applied Physics Letters. 58: 2273-2275. DOI: 10.1063/1.104897 |
0.354 |
|
| 1991 |
Hwu RJ, Sadwick LP, Streit DC. Millimeter wave monolithic high electron mobility (HEM) varactor diode-grid frequency tripler arrays International Journal of Infrared and Millimeter Waves. 12: 1409-1423. DOI: 10.1007/Bf01883874 |
0.333 |
|
| 1990 |
Kim YK, Baugh DA, Shuh DK, Williams RS, Sadwick LP, Wang KL. Structural and chemical stability of thin films of Pt-Ga intermetallic compounds of GaAs (001) Journal of Materials Research. 5: 2139-2151. DOI: 10.1557/Jmr.1990.2139 |
0.436 |
|
| 1988 |
Joseph DM, Balagopal R, Hicks RF, Sadwick LP, Wang KL. Observation of carbon incorporation during gallium arsenide growth by molecular beam epitaxy Applied Physics Letters. 53: 2203-2204. DOI: 10.1063/1.100281 |
0.398 |
|
| 1988 |
Joseph DM, Hicks RF, Sadwick LP, Wang KL. Vibrational spectra of hydrogen atoms adsorbed on MBE-grown GaAs(100) Surface Science. 204. DOI: 10.1016/0039-6028(88)90261-0 |
0.325 |
|
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