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Jane P. Chang - Publications

Affiliations: 
Chemical Engineering 0294 University of California, Los Angeles, Los Angeles, CA 
Area:
Chemical Engineering, Materials Science Engineering
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Year Citation  Score
2020 Sheil R, Perng YC, Mars J, Cho J, Dunn B, Toney MF, Chang JP. Synthesis and Crystallization of Atomic Layer Deposition β-Eucryptite LiAlSiO Thin-Film Solid Electrolytes. Acs Applied Materials & Interfaces. PMID 33314924 DOI: 10.1021/acsami.0c11614  0.618
2020 Sang X, Xia Y, Sautet P, Chang JP. Atomic layer etching of metals with anisotropy, specificity, and selectivity Journal of Vacuum Science and Technology. 38: 43005. DOI: 10.1116/6.0000225  0.369
2020 Sang X, Chang JP. Patterning nickel for extreme ultraviolet lithography mask application. II. Hybrid reactive ion etch and atomic layer etch processing Journal of Vacuum Science and Technology. 38: 42604. DOI: 10.1116/6.0000191  0.344
2020 Sang X, Chen E, Chang JP. Patterning nickel for extreme ultraviolet lithography mask application I. Atomic layer etch processing Journal of Vacuum Science and Technology. 38: 42603. DOI: 10.1116/6.0000190  0.393
2020 Sheil R, Chang JP. Synthesis and integration of thin film solid state electrolytes for 3D Li-ion microbatteries Journal of Vacuum Science and Technology. 38: 32411. DOI: 10.1116/1.5142859  0.38
2020 Sang X, Chang JP. Physical and chemical effects in directional Atomic Layer Etching Journal of Physics D. 53: 183001. DOI: 10.1088/1361-6463/Ab6D94  0.337
2020 Acosta A, Fitzell K, Schneider JD, Dong C, Yao Z, Sheil R, Wang YE, Carman GP, Sun NX, Chang JP. Underlayer effect on the soft magnetic, high frequency, and magnetostrictive properties of FeGa thin films Journal of Applied Physics. 128: 13903. DOI: 10.1063/5.0011873  0.371
2020 Acosta A, Fitzell K, Schneider JD, Dong C, Yao Z, Wang YE, Carman GP, Sun NX, Chang JP. Enhancing the soft magnetic properties of FeGa with a non-magnetic underlayer for microwave applications Applied Physics Letters. 116: 222404. DOI: 10.1063/5.0007603  0.322
2020 Choi JH, Pham C, Dorman J, Kim T, Chang JP. Atomic layer deposition of YMnO3 thin films Journal of Magnetism and Magnetic Materials. 498: 166146. DOI: 10.1016/J.Jmmm.2019.166146  0.709
2019 Altieri ND, Chen JK, Chang JP. Controlling surface chemical states for selective patterning of CoFeB Journal of Vacuum Science and Technology. 37: 11303. DOI: 10.1116/1.5063662  0.388
2017 Pham CD, Chang J, Zurbuchen MA, Chang JP. Magnetic Properties of CoFe2O4 Thin Films Synthesized by Radical Enhanced Atomic Layer Deposition. Acs Applied Materials & Interfaces. PMID 28925262 DOI: 10.1021/Acsami.7B08097  0.397
2017 Ishikawa K, Karahashi K, Ichiki T, Chang JP, George SM, Kessels WMM, Lee HJ, Tinck S, Um JH, Kinoshita K. Progress and prospects in nanoscale dry processes: How can we control atomic layer reactions? Japanese Journal of Applied Physics. 56: 6. DOI: 10.7567/Jjap.56.06Ha02  0.312
2017 Chen JK, Altieri ND, Kim T, Chen E, Lill T, Shen M, Chang JP. Directional etch of magnetic and noble metals. II. Organic chemical vapor etch Journal of Vacuum Science and Technology. 35. DOI: 10.1116/1.4983830  0.363
2017 Chen JK, Altieri ND, Kim T, Lill T, Shen M, Chang JP. Directional etch of magnetic and noble metals. I. Role of surface oxidation states Journal of Vacuum Science and Technology. 35. DOI: 10.1116/1.4983829  0.306
2017 Chen JK, Kim T, Altieri ND, Chen E, Chang JP. Ion beam assisted organic chemical vapor etch of magnetic thin films Journal of Vacuum Science and Technology. 35: 31304. DOI: 10.1116/1.4978553  0.311
2017 Li X, Fitzell K, Wu D, Karaba CT, Buditama A, Yu G, Wong KL, Altieri N, Grezes C, Kioussis N, Tolbert S, Zhang Z, Chang JP, Amiri PK, Wang KL. Enhancement of voltage-controlled magnetic anisotropy through precise control of Mg insertion thickness at CoFeB|MgO interface Applied Physics Letters. 110: 52401. DOI: 10.1063/1.4975160  0.304
2016 Chen MC, Chang TH, Chang JP, Huang HD, Ho WC, Lin YS, Pan KL, Liu WH, Huang YK. Circulating miR-148b-3p and miR-409-3p as biomarkers for heart failure in patients with mitral regurgitation. International Journal of Cardiology. 222: 148-154. PMID 27505319 DOI: 10.1016/j.ijcard.2016.07.179  0.33
2016 Chen MC, Chang JP, Lin YS, Pan KL, Ho WC, Liu WH, Chang TH, Huang YK, Fang CY, Chen CJ. Deciphering the gene expression profile of peroxisome proliferator-activated receptor signaling pathway in the left atria of patients with mitral regurgitation. Journal of Translational Medicine. 14: 157. PMID 27250500 DOI: 10.1186/s12967-016-0871-3  0.333
2016 Chien D, Buditama AN, Schelhas LT, Kang HY, Robbennolt S, Chang JP, Tolbert SH. Tuning magnetoelectric coupling using porosity in multiferroic nanocomposites of ALD-grown Pb(Zr,Ti)O3 and templated mesoporous CoFe2O4 Applied Physics Letters. 109. DOI: 10.1063/1.4962536  0.333
2016 Chien D, Li X, Wong K, Zurbuchen MA, Robbennolt S, Yu G, Tolbert S, Kioussis N, Khalili Amiri P, Wang KL, Chang JP. Enhanced voltage-controlled magnetic anisotropy in magnetic tunnel junctions with an MgO/PZT/MgO tunnel barrier Applied Physics Letters. 108. DOI: 10.1063/1.4943023  0.335
2016 Cho J, Kim T, Seegmiller T, Chang JP. Elucidating the Surface Reaction Mechanisms During Atomic Layer Deposition of LixAlySizO by in Situ Fourier Transform Infrared Spectroscopy Journal of Physical Chemistry C. 120: 11837-11846. DOI: 10.1021/Acs.Jpcc.5B09212  0.413
2015 Chang JP, Chen MC, Liu WH, Lin YS, Huang YK, Pan KL, Ho WC, Fang CY, Chen CJ, Chen HC. Mitochondrial apoptotic pathway activation in the atria of heart failure patients due to mitral and tricuspid regurgitation. Experimental and Molecular Pathology. 99: 65-73. PMID 26004742 DOI: 10.1016/j.yexmp.2015.05.007  0.336
2015 Chen HC, Chang JP, Chang TH, Lin YS, Huang YK, Pan KL, Fang CY, Chen CJ, Ho WC, Chen MC. Enhanced expression of ROCK in left atrial myocytes of mitral regurgitation: a potential mechanism of myolysis. Bmc Cardiovascular Disorders. 15: 33. PMID 25956928 DOI: 10.1186/s12872-015-0038-9  0.332
2015 Cho J, Kim T, Seegmiller T, Chang JP. Mechanistic study of atomic layer deposition of AlxSiyO thin film via in-situ FTIR spectroscopy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 33. DOI: 10.1116/1.4927318  0.382
2015 Marchack N, Kim T, Blom H, Chang JP. In-situ etch rate study of HfxLayOz in Cl2/BCl3 plasmas using the quartz crystal microbalance Journal of Vacuum Science and Technology. 33: 31305. DOI: 10.1116/1.4914132  0.783
2015 Kim T, Kim Y, Chen JKC, Chang JP. Viable chemical approach for patterning nanoscale magnetoresistive random access memory Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 33. DOI: 10.1116/1.4904215  0.417
2015 Kim Y, Pham C, Chang JP. Potentials and challenges of integration for complex metal oxides in CMOS devices and beyond Journal of Physics D: Applied Physics. 48. DOI: 10.1088/0022-3727/48/6/063001  0.314
2015 Liang K, Buditama A, Chien D, Cui J, Cheung PL, Goljahi S, Tolbert SH, Chang JP, Lynch CS. The conductivity mechanism and an improved C-V model of ferroelectric PZT thin film Journal of Applied Physics. 117. DOI: 10.1063/1.4919431  0.351
2015 Pham CD, Chang J, Zurbuchen MA, Chang JP. Synthesis and Characterization of BiFeO3 Thin Films for Multiferroic Applications by Radical Enhanced Atomic Layer Deposition Chemistry of Materials. 27: 7282-7288. DOI: 10.1021/Acs.Chemmater.5B02162  0.42
2014 Kim T, Chen JK, Chang JP. Thermodynamic assessment and experimental verification of reactive ion etching of magnetic metal elements Journal of Vacuum Science and Technology. 32: 41305. DOI: 10.1116/1.4885061  0.341
2014 Perng YC, Cho J, Sun SY, Membreno D, Cirigliano N, Dunn B, Chang JP. Synthesis of ion conducting LixAlySizO thin films by atomic layer deposition Journal of Materials Chemistry A. 2: 9566-9573. DOI: 10.1039/C3Ta14928E  0.665
2014 Perng YC, Kim T, Chang JP. Effect of residual H2O on epitaxial AlN film growth on 4H-SiC by alternating doses of TMA and NH3 Applied Surface Science. 314: 1047-1052. DOI: 10.1016/J.Apsusc.2014.06.041  0.645
2013 Janković V, Yang YM, You J, Dou L, Liu Y, Cheung P, Chang JP, Yang Y. Active layer-incorporated, spectrally tuned Au/SiO2 core/shell nanorod-based light trapping for organic photovoltaics. Acs Nano. 7: 3815-22. PMID 23627699 DOI: 10.1021/Nn400246Q  0.628
2013 Chen HC, Chen YL, Guo BF, Tsai TH, Chang JP, Pan KL, Lin YS, Chen MC. Thrombocytopenia, dual antiplatelet therapy, and heparin bridging strategy increase pocket hematoma complications in patients undergoing cardiac rhythm device implantation. The Canadian Journal of Cardiology. 29: 1110-7. PMID 23474139 DOI: 10.1016/j.cjca.2012.12.014  0.352
2013 Hsu CC, Marchack N, Martin RM, Pham C, Hoang J, Chang JP. Feature profile evolution during shallow trench isolation etching in chlorine-based plasmas. III. the effect of oxygen addition Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 31. DOI: 10.1116/1.4810908  0.789
2013 Choi JH, Zhang F, Perng YC, Chang JP. Tailoring the composition of lead zirconate titanate by atomic layer deposition Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4775789  0.663
2012 Zhang LQ, Liu XH, Perng YC, Cho J, Chang JP, Mao SX, Ye ZZ, Huang JY. Direct observation of Sn crystal growth during the lithiation and delithiation processes of SnO(2) nanowires. Micron (Oxford, England : 1993). 43: 1127-33. PMID 22770619 DOI: 10.1016/J.Micron.2012.01.016  0.621
2012 Marchack N, Chang JP. Chemical processing of materials on silicon: more functionality, smaller features, and larger wafers. Annual Review of Chemical and Biomolecular Engineering. 3: 235-62. PMID 22691090 DOI: 10.1146/Annurev-Chembioeng-062011-080958  0.745
2012 Yeh M, Lin L, Li Y, Chang J, Chen P, Lee C, Ho K. Composite Films Based on Poly(3,4-ethylene dioxythiophene):Poly(styrene sulfonate) Conducting Polymer and TiC Nanoparticles as the Counter Electrodes for Flexible Dye-Sensitized Solar Cells Japanese Journal of Applied Physics. 51. DOI: 10.1143/Jjap.51.10Ne01  0.347
2012 Dorman JA, Choi JH, Kuzmanich G, Bargar JR, Chang JP. Optimizing the crystal environment through extended x-ray absorption fine structure to increase the luminescent lifetimes of Er 3 doped Y 2O 3 nanoparticles Journal of Applied Physics. 111. DOI: 10.1063/1.3702789  0.675
2012 Zhou H, Dorman JA, Perng YC, Chang JP, Liu J. Temperature-dependent electron transport in highly ordered Co/Al 2O 3 core-shell nanocrystal memory synthesized with di-block co-polymers Journal of Applied Physics. 111. DOI: 10.1063/1.3698322  0.747
2012 Dorman JA, Choi JH, Kuzmanich G, Chang JP. High-quality white light using core-shell RE 3+:LaPO 4 (RE = Eu, Tb, Dy, Ce) phosphors Journal of Physical Chemistry C. 116: 12854-12860. DOI: 10.1021/Jp300858Z  0.651
2012 Dorman JA, Choi JH, Kuzmanich G, Chang JP. Elucidating the effects of a rare-earth oxide shell on the luminescence dynamics of Er 3+:Y 2O 3 nanoparticles Journal of Physical Chemistry C. 116: 10333-10340. DOI: 10.1021/Jp300126R  0.693
2011 Jankovic V, Chang JP. HfO 2 and ZrO 2-based microchemical ion sensitive field effect transistor (ISFET) sensors: Simulation experiment Journal of the Electrochemical Society. 158. DOI: 10.1149/1.3623421  0.65
2011 Marchack N, Chang JP. Perspectives in nanoscale plasma etching: What are the ultimate limits? Journal of Physics D: Applied Physics. 44. DOI: 10.1088/0022-3727/44/17/174011  0.756
2011 Zhang F, Perng YC, Choi JH, Wu T, Chung TK, Carman GP, Locke C, Thomas S, Saddow SE, Chang JP. Atomic layer deposition of Pb(Zr,Ti)Ox on 4H-SiC for metal-ferroelectric-insulator-semiconductor diodes Journal of Applied Physics. 109. DOI: 10.1063/1.3596574  0.65
2011 Zhou H, Dorman JA, Perng YC, Gachot S, Zheng JG, Chang JP, Liu J. Memory characteristics of ordered Co/ Al2 O3 core-shell nanocrystal arrays assembled by diblock copolymer process Applied Physics Letters. 98. DOI: 10.1063/1.3589993  0.747
2011 Choi JH, Mao Y, Chang JP. Development of hafnium based high-k materials - A review Materials Science and Engineering R: Reports. 72: 97-136. DOI: 10.1016/J.Mser.2010.12.001  0.359
2010 Zhou H, Dorman JA, Perng Y, Gachot S, Huang J, Mao Y, Chang J, Liu J. Co/HfO2 core shell nanocrystal memory Mrs Proceedings. 1250. DOI: 10.1557/Proc-1250-G01-09  0.732
2010 Dorman JA, Mao Y, Bargar JR, Chang JP. In situ X-ray diffraction and absorption studies of the growth and phase transformation of yttrium hydroxide nanotubes to their oxide counterparts Journal of Physical Chemistry C. 114: 17422-17427. DOI: 10.1021/Jp105389A  0.685
2010 Sawkar-Mathur M, Marchiori C, Fompeyrine J, Toney MF, Bargar J, Chang JP. Structural properties of epitaxial SrHfO3 thin films on Si (001) Thin Solid Films. 518: S118-S122. DOI: 10.1016/J.Tsf.2009.10.068  0.422
2009 Martin RM, Chang JP. Plasma etching of Hf-based high- k thin films. Part III. Modeling the reaction mechanisms Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 27: 224-229. DOI: 10.1116/1.3065705  0.391
2009 Martin RM, Blom H, Chang JP. Plasma etching of Hf-based high-k thin films. Part II. Ion-enhanced surface reaction mechanisms Journal of Vacuum Science and Technology. 27: 217-223. DOI: 10.1116/1.3065695  0.399
2009 Martin RM, Chang JP. Plasma etching of Hf-based high- k thin films. Part I. Effect of complex ions and radicals on the surface reactions Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 27: 209-216. DOI: 10.1116/1.3065679  0.376
2009 Mao Y, Guo X, Tran T, Wang KL, Shih CK, Chang JP. Luminescent properties of ensemble and individual erbium-doped yttrium oxide nanotubes Journal of Applied Physics. 105: 94329. DOI: 10.1063/1.3117520  0.311
2009 Mao Y, Guo X, Huang JY, Wang KL, Chang JP. Luminescent Nanocrystals with A2B2O7 Composition Synthesized by a Kinetically Modified Molten Salt Method Journal of Physical Chemistry C. 113: 1204-1208. DOI: 10.1021/Jp807111H  0.314
2008 Liu J, Mao Y, Lan E, Banatao DR, Forse GJ, Lu J, Blom HO, Yeates TO, Dunn B, Chang JP. Generation of oxide nanopatterns by combining self-assembly of S-layer proteins and area-selective atomic layer deposition. Journal of the American Chemical Society. 130: 16908-13. PMID 19053479 DOI: 10.1021/Ja803186E  0.348
2008 Hsu CC, Hoang J, Le V, Chang JP. Feature profile evolution during shallow trench isolation etch in chlorine-based plasmas. II. Coupling reactor and feature scale models Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 1919-1925. DOI: 10.1116/1.2998759  0.581
2008 Hoang J, Hsu CC, Chang JP. Feature profile evolution during shallow trench isolation etch in chlorine-based plasmas. I. Feature scale modeling Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 1911-1918. DOI: 10.1116/1.2998756  0.559
2008 Liu J, Martin RM, Chang JP. Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 26: 1251-1257. DOI: 10.1116/1.2966430  0.476
2008 Sawkar-Mathur M, Perng YC, Lu J, Blom HO, Bargar J, Chang JP. The effect of aluminum oxide incorporation on the material and electrical properties of hafnium oxide on Ge Applied Physics Letters. 93. DOI: 10.1063/1.3040311  0.65
2008 Sawkar-Mathur M, Chang JP. Material and electrical properties of Hfx Ruy and Hfx Ruy Nz metals as gate electrodes for p -metal oxide semiconductor field effect transistor devices Journal of Applied Physics. 104. DOI: 10.1063/1.2996111  0.349
2008 Mao Y, Bargar J, Toney M, Chang JP. Correlation between luminescent properties and local coordination environment for erbium dopant in yttrium oxide nanotubes Journal of Applied Physics. 103: 094316. DOI: 10.1063/1.2912486  0.335
2008 Mao Y, Huang JY, Ostroumov R, Wang KL, Chang JP. Synthesis and Luminescence Properties of Erbium-Doped Y2O3 Nanotubes Journal of Physical Chemistry C. 112: 2278-2285. DOI: 10.1021/Jp0773738  0.313
2008 Hoang J, Chang JP. Effect of Yb 3+ Co-doping on the luminescent properties of Er 3+ :Y 2O 3Thin films Aiche Annual Meeting, Conference Proceedings.  0.571
2008 Hoang J, Chang JP. Simulation of profile evolution in shallow trench formation by plasma etching Aiche Annual Meeting, Conference Proceedings.  0.51
2007 Lu KC, Wu WW, Wu HW, Tanner CM, Chang JP, Chen LJ, Tu KN. In situ control of atomic-scale Si layer with huge strain in the nanoheterostructure NiSi/Si/NiSi through point contact reaction. Nano Letters. 7: 2389-94. PMID 17604405 DOI: 10.1021/Nl071046U  0.573
2007 Cruz D, Chang JP, Fico M, Guymon AJ, Austin DE, Blain MG. Design, microfabrication, and analysis of micrometer-sized cylindrical ion trap arrays. The Review of Scientific Instruments. 78: 015107. PMID 17503946 DOI: 10.1063/1.2403840  0.636
2007 Tanner CM, Toney MF, Lu J, Blom HO, Sawkar-Mathur M, Tafesse MA, Chang JP. Engineering epitaxial γ -Al2 O3 gate dielectric films on 4H-SiC Journal of Applied Physics. 102. DOI: 10.1063/1.2812609  0.6
2007 Tanner CM, Perng YC, Frewin C, Saddow SE, Chang JP. Electrical performance of Al2O3 gate dielectric films deposited by atomic layer deposition on 4H-SiC Applied Physics Letters. 91. DOI: 10.1063/1.2805742  0.743
2007 Hoang J, Van TT, Sawkar-Mathur M, Hoex B, Van De Sanden MCM, Kessels WMM, Ostroumov R, Wang KL, Bargar JR, Chang JP. Optical properties of Y2O3 thin films doped with spatially controlled Er3+ by atomic layer deposition Journal of Applied Physics. 101. DOI: 10.1063/1.2748629  0.771
2007 Tanner CM, Sawkar-Mathur M, Lu J, Blom HO, Toney MF, Chang JP. Structural properties of epitaxial γ- Al2O3 (111) thin films on 4H-SiC (0001) Applied Physics Letters. 90. DOI: 10.1063/1.2435978  0.621
2007 Tanner CM, Choi J, Chang JP. Electronic structure and band alignment at the Hf O2 4H-SiC interface Journal of Applied Physics. 101. DOI: 10.1063/1.2432402  0.618
2006 Tanner CM, Lu J, Blom HO, Chang JP. Structural and Morphological Properties of Ultrathin HfO2 Dielectrics on 4H-SiC (0001) Materials Science Forum. 1075-1078. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.1075  0.623
2006 Tanner CM, Choi J, Chang JP. Experimental and first-principles studies of the band alignment at the HfO2/4H-SiC (0001) interface Materials Science Forum. 527: 1071-1074. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.1071  0.617
2006 Tanner CM, Lu J, Blom H, Chang JP. Growth of Epitaxial γ-Al2O3 Dielectrics on 4H-SiC Mrs Proceedings. 911. DOI: 10.1557/Proc-0911-B10-06  0.607
2006 Johnson-Steigelman HT, Brinck AV, Chang JP, Lyman PF. Production of a hafnium silicate dielectric layer for use as a gate oxide by solid-state reaction Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 24: 1218-1222. DOI: 10.1116/1.2180274  0.443
2006 Van TT, Hoang J, Ostroumov R, Wang KL, Bargar JR, Lu J, Blom HO, Chang JP. Nanostructure and temperature-dependent photoluminescence of Er-doped Y 2O 3 thin films for micro-optoelectronic integrated circuits Journal of Applied Physics. 100. DOI: 10.1063/1.2349477  0.775
2006 Van TT, Bargar JR, Chang JP. Er coordination in y 2O 3 thin films studied by extended x-ray absorption fine structure Journal of Applied Physics. 100. DOI: 10.1063/1.2214299  0.691
2006 Choi J, Puthenkovilakam R, Chang JP. Effect of nitrogen on the electronic properties of hafnium oxynitrides Journal of Applied Physics. 99. DOI: 10.1063/1.2177385  0.775
2005 Lao SX, Martin RM, Chang JP. Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films Journal of Vacuum Science and Technology. 23: 488-496. DOI: 10.1116/1.1894666  0.431
2005 Choi J, Chang JP. Photoconductivity of AlN films on SiC Journal of Applied Physics. 98. DOI: 10.1063/1.2126787  0.346
2005 Van TT, Chang JP. Controlled erbium incorporation and photoluminescence of Er-doped Y 2O 3 Applied Physics Letters. 87. DOI: 10.1063/1.1984082  0.715
2005 Puthenkovilakam R, Sawkar M, Chang JP. Electrical characteristics of postdeposition annealed Hf O2 on silicon Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1927273  0.809
2005 Choi J, Puthenkovilakam R, Chang JP. Band structure and alignment of the AlNSiC heterostructure Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1923187  0.776
2005 Cruz D, Chang JP, Blain MG. Field emission characteristics of a tungsten microelectromechanical system device Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1875756  0.631
2005 Puthenkovilakam R, Lin YS, Choi J, Lu J, Blom HO, Pianetta P, Devine D, Sendler M, Chang JP. Effects of post-deposition annealing on the material characteristics of ultrathin HfO2 films on silicon Journal of Applied Physics. 97. DOI: 10.1063/1.1831543  0.811
2005 Van TT, Chang JP. Radical-enhanced atomic layer deposition of Y2O3 via a β-diketonate precursor and O radicals Surface Science. 596: 1-11. DOI: 10.1016/J.Susc.2005.08.019  0.715
2005 Van TT, Chang JP. Surface reaction kinetics of metal β-diketonate precursors with O radicals in radical-enhanced atomic layer deposition of metal oxides Applied Surface Science. 246: 250-261. DOI: 10.1016/J.Apsusc.2004.11.025  0.676
2005 Choi J, Tanner C, Chang JP. First-principles studies of the electronic properties of Hfo2 on Sic Aiche Annual Meeting, Conference Proceedings. 10537.  0.301
2005 Tanner CM, Choi J, Chang JP. Material and electrical properties of ultrathin HfO 2 films on 4H-SiC (0001) Ecs Transactions. 1: 149-151.  0.513
2004 Sha L, Chang JP. Plasma etching of high dielectric constant materials on silicon in halogen chemistries Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 22: 88-95. DOI: 10.1116/1.1627771  0.612
2004 Ni D, Lou Y, Christofides PD, Sha L, Lao S, Chang JP. Real-time carbon content control for PECVD ZrO/sub 2/ thin-film growth Ieee Transactions On Semiconductor Manufacturing. 17: 221-230. DOI: 10.1109/Tsm.2004.826939  0.586
2004 Puthenkovilakam R, Carter EA, Chang JP. First-principles exploration of alternative gate dielectrics: Electronic structure of ZrO2/Si and ZrSiO4/Si interfaces Physical Review B - Condensed Matter and Materials Physics. 69. DOI: 10.1103/Physrevb.69.155329  0.793
2004 Moravej M, Yang X, Nowling GR, Chang JP, Hicks RF, Babayan SE. Physics of high-pressure helium and argon radio-frequency plasmas Journal of Applied Physics. 96: 7011-7017. DOI: 10.1063/1.1815047  0.319
2004 Puthenkovilakam R, Chang JP. An accurate determination of barrier heights at the HfO 2/Si interfaces Journal of Applied Physics. 96: 2701-2707. DOI: 10.1063/1.1778213  0.79
2004 Puthenkovilakam R, Chang JP. Valence band structure and band alignment at the ZrO 2/Si interface Applied Physics Letters. 84: 1353-1355. DOI: 10.1063/1.1650547  0.781
2004 Huang TJ, Tseng HR, Sha L, Lu W, Brough B, Flood AH, Yu BD, Celestre PC, Chang JP, Stoddart JF, Ho CM. Mechanical shuttling of linear motor-molecules in condensed phases on solid substrates Nano Letters. 4: 2065-2071. DOI: 10.1021/Nl035099X  0.563
2004 Ni D, Lou Y, Christofides PD, Lao S, Chang JP. Real-Time Feedback Control of Carbon Content of Zirconium Dioxide Thin Films Using Optical Emission Spectroscopy Ifac Proceedings Volumes. 37: 553-558. DOI: 10.1016/S1474-6670(17)38790-6  0.308
2003 Sha L, Puthenkovilakam R, Lin Y, Chang JP. Ion-enhanced chemical etching of HfO2 for integration in metal–oxide–semiconductor field effect transistors Journal of Vacuum Science & Technology B. 21: 2420-2427. DOI: 10.1116/1.1627333  0.791
2003 Sha L, Chang JP. Plasma etching selectivity of ZrO2 to Si in BCl3/Cl2 plasmas Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 21: 1915-1922. DOI: 10.1116/1.1615975  0.533
2003 Chang JP, Coburn JW. Plasma-Surface interactions Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 21. DOI: 10.1116/1.1600452  0.327
2003 Cho B, Lao SX, Chang JP. Origin and effect of impurity incorporation in plasma-enhanced ZrO2 deposition Journal of Applied Physics. 93: 9345-9351. DOI: 10.1063/1.1572193  0.4
2003 Lin YS, Puthenkovilakam R, Chang JP, Bouldin C, Levin I, Nguyen NV, Ehrstein J, Sun Y, Pianetta P, Conard T, Vandervorst W, Ventura V, Selbrede S. Interfacial properties of ZrO2 on silicon Journal of Applied Physics. 93: 5945-5952. DOI: 10.1063/1.1563844  0.814
2003 Cho B, Chang JP, Min J, Moon SH, Kim YW, Levin I. Material characteristics of electrically tunable zirconium oxide thin films Journal of Applied Physics. 93: 745-749. DOI: 10.1063/1.1525044  0.456
2003 Puthenkovilakam R, Chang JP. Tailoring high-K/silicon interface for nanoelectronics applications Proceedings - Electrochemical Society. 22: 3-8.  0.801
2002 Chang JP. Tailoring the Material and Electronic Properties of Ultra-Thin ZrO2 Films for Microelectronics Application Journal of the Chinese Institute of Chemical Engineers. 33: 95-102. DOI: 10.6967/Jcice.200201.0095  0.46
2002 Sha L, Cho BO, Chang JP. Ion-enhanced chemical etching of ZrO2 in a chlorine discharge Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 20: 1525-1531. DOI: 10.1116/1.1491267  0.577
2002 Cho BO, Wang J, Chang JP. Metalorganic precursor decomposition and oxidation mechanisms in plasma-enhanced ZrO 2 deposition Journal of Applied Physics. 92: 4238-4244. DOI: 10.1063/1.1506421  0.395
2002 Lin YS, Puthenkovilakam R, Chang JP. Dielectric property and thermal stability of HfO2 on silicon Applied Physics Letters. 81: 2041-2043. DOI: 10.1063/1.1506207  0.803
2002 Cho BO, Wang J, Sha L, Chang JP. Tuning the electrical properties of zirconium oxide thin films Applied Physics Letters. 80: 1052-1054. DOI: 10.1063/1.1448667  0.656
2002 Chu K, Chang JP, Steigerwald ML, Fleming RM, Opila RL, Lang DV, Van Dover RB, Jones CDW. Material and electrical characterization of carbon-doped Ta 2O 5 films for embedded dynamic random access memory applications Journal of Applied Physics. 91: 308-316. DOI: 10.1063/1.1418420  0.395
2002 Chang JP. Tailoring the material and electronic properties of ultra-thin ZrO2 films for microelectronics application Journal of the Chinese Institute of Chemical Engineers. 33: 95-102.  0.352
2001 Chu K, Cho B, Chang JP, Steigerwald ML, Fleming RM, Opila RL, Lang DV, Dover RBV, Jones CDW. Material and Electrical Characterization of Carbon-Doped Ta 2 O 5 Films for Embedded DRAM Applications Mrs Proceedings. 672. DOI: 10.1557/Proc-671-O8.39  0.395
2001 Chang JP, Lin YS. Ultra-thin zirconium oxide films deposited by rapid thermal chemical vapor deposition (RT-CVD) as alternative gate dielectric Materials Research Society Symposium - Proceedings. 670. DOI: 10.1557/Proc-670-K1.4  0.461
2001 Chang JP, Lin Y, Berger S, Kepten A, Bloom R, Levy S. Ultrathin zirconium oxide films as alternative gate dielectrics Journal of Vacuum Science & Technology B. 19: 2137-2143. DOI: 10.1116/1.1415513  0.465
2001 Cho BO, Lao S, Sha L, Chang JP. Spectroscopic study of plasma using zirconium tetra-tert-butoxide for the plasma enhanced chemical vapor deposition of zirconium oxide Journal of Vacuum Science and Technology, Part a: Vacuum, Surfaces and Films. 19: 2751-2761. DOI: 10.1116/1.1403717  0.632
2001 Chang JP, Sawin HH. Notch formation by stress enhanced spontaneous etching of polysilicon Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 1870-1873. DOI: 10.1116/1.1401752  0.597
2001 Chang JP, Lin YS, Chu K. Rapid thermal chemical vapor deposition of zirconium oxide for metal-oxide-semiconductor field effect transistor application Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 1782-1787. DOI: 10.1116/1.1396639  0.38
2001 Chang JP, Sawin HH. Molecular-beam study of the plasma-surface kinetics of silicon dioxide and photoresist etching with chlorine Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 1319-1327. DOI: 10.1116/1.1387452  0.63
2001 Chang JP, Lin YS. Thermal stability of stacked high-k dielectrics on silicon Applied Physics Letters. 79: 3824-3826. DOI: 10.1063/1.1419030  0.423
2001 Chang JP, Lin YS. Dielectric property and conduction mechanism of ultrathin zirconium oxide films Applied Physics Letters. 79: 3666-3668. DOI: 10.1063/1.1418265  0.438
2001 Chang JP, Lin YS. Highly conformal ZrO2 deposition for dynamic random access memory application Journal of Applied Physics. 90: 2964-2969. DOI: 10.1063/1.1389756  0.422
2000 Chang JP, Green ML, Donnelly VM, Opila RL, Eng J, Sapjeta J, Silverman PJ, Weir B, Lu HC, Gustafsson T, Garfunkel E. Profiling nitrogen in ultrathin silicon oxynitrides with angle-resolved x-ray photoelectron spectroscopy Journal of Applied Physics. 87: 4449-4455. DOI: 10.1063/1.373090  0.428
2000 Queeney KT, Weldon MK, Chang JP, Chabal YJ, Gurevich AB, Sapjeta J, Opila RL. Infrared spectroscopic analysis of the Si/SiO2 interface structure of thermally oxidized silicon Journal of Applied Physics. 87: 1322-1330. DOI: 10.1063/1.372017  0.416
1999 Chang JP, Steigerwald ML, Fleming RM, Opila RL, Alers GB. Oxygen diffusioin in tantalum oxide metal-oxide-metal capacitor structures Materials Research Society Symposium - Proceedings. 574: 329-334. DOI: 10.1557/Proc-574-329  0.336
1999 Sapjeta J, Green ML, Chang JP, Silverman PJ. Relationship between interfacial roughness and dielectric reliability for silicon oxynitride gate dielectrics processed with nitric oxide Materials Research Society Symposium - Proceedings. 567: 289-294. DOI: 10.1557/Proc-567-289  0.433
1999 Chang JP, Krautter HW, Zhu W, Opila RL, Pai CS. Chemical and thermal stability of fluorinated amorphous carbon films for interlayer dielectric applications Materials Research Society Symposium - Proceedings. 565: 117-122. DOI: 10.1557/Proc-565-117  0.308
1999 Chang JP, Krautter HW, Zhu W, Opila RL, Pai CS. Integration of fluorinated amorphous carbon as low-dielectric constant Insulator: Effects of heating and deposition of tantalum nitride Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 17: 2969-2974. DOI: 10.1116/1.581968  0.319
1999 Chang JP, Steigerwald ML, Fleming RM, Opila RL, Alers GB. Thermal stability of Ta2O5 in metal–oxide–metal capacitor structures Applied Physics Letters. 74: 3705-3707. DOI: 10.1063/1.123227  0.319
1999 Lu HC, Yasuda N, Garfunkel E, Gustafsson T, Chang JP, Opila RL, Alers G. Structural properties of thin films of high dielectric constant materials on silicon Microelectronic Engineering. 48: 287-290. DOI: 10.1016/S0167-9317(99)00390-1  0.441
1998 Chang JP, Mahorowala AP, Sawin HH. Plasma-surface kinetics and feature profile evolution in chlorine etching of polysilicon Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 16: 217-224. DOI: 10.1116/1.580974  0.619
1997 Chang JP, Zhang Z, Xu H, Sawin HH, Butterbaugh JW. Transition metal cleaning using thermal beams Journal of Vacuum Science and Technology. 15: 2959-2967. DOI: 10.1116/1.580891  0.601
1997 Chang JP, Sawin HH. Kinetic study of low energy ion-enhanced polysilicon etching using Cl, Cl2, and Cl+ beam scattering Journal of Vacuum Science and Technology. 15: 610-615. DOI: 10.1116/1.580692  0.613
1997 Chang JP, Arnold JC, Zau GCH, Shin H, Sawin HH. Kinetic study of low energy argon ion-enhanced plasma etching of polysilicon with atomic/molecular chlorine Journal of Vacuum Science and Technology. 15: 1853-1863. DOI: 10.1116/1.580652  0.619
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