| Year |
Citation |
Score |
| 2017 |
Zhang B, Zheng T, Wang Q, Zhu Y, Alshareef HN, Kim MJ, Gnade BE. Contact resistance and stability study for Au, Ti, Hf and Ni contacts on thin-film Mg2Si Journal of Alloys and Compounds. 699: 1134-1139. DOI: 10.1016/J.Jallcom.2016.12.229 |
0.575 |
|
| 2016 |
Smith L, Murphy JW, Kim J, Rozhdestvenskyy S, Mejia I, Park H, Allee DR, Quevedo-Lopez M, Gnade B. Thin film CdTe based neutron detectors with high thermal neutron efficiency and gamma rejection for security applications Nuclear Instruments and Methods in Physics Research, Section a: Accelerators, Spectrometers, Detectors and Associated Equipment. 838: 117-123. DOI: 10.1016/J.Nima.2016.09.026 |
0.315 |
|
| 2016 |
Wondmagegn W, Mejia I, Salas-Villasenor A, Stiegler HJ, Quevedo-Lopez MA, Pieper RJ, Gnade BE. CdS Thin Film Transistor for Inverter and Operational Amplifier Circuit Applications Microelectronic Engineering. 157: 64-70. DOI: 10.1016/J.Mee.2016.02.042 |
0.8 |
|
| 2015 |
Fuentes-Fernandez EMA, Gnade BE, Quevedo-Lopez MA, Shah P, Alshareef HN. The effect of poling conditions on the performance of piezoelectric energy harvesters fabricated by wet chemistry Journal of Materials Chemistry A. 3: 9837-9842. DOI: 10.1039/C5Ta00447K |
0.514 |
|
| 2015 |
Wang Q, Ma D, Ding J, Wang L, Qiao Q, Jia H, Gnade BE, Hoshikawa-Halbert J. An efficient dual-emissive-layer white organic light emitting-diode: Insight into device working mechanism and origin of color-shift Organic Electronics: Physics, Materials, Applications. 19: 157-162. DOI: 10.1016/J.Orgel.2015.01.027 |
0.373 |
|
| 2015 |
Wang Q, Oswald IWH, Yang X, Zhou G, Jia H, Qiao Q, Hoshikawa-Halbert J, Gnade BE. Managing Charge and Exciton Transporting Behavior in White Organic Light-Emitting Devices for High Power Efficiency and Superior Color Stability Advanced Electronic Materials. 1. DOI: 10.1002/Aelm.201400040 |
0.365 |
|
| 2014 |
Wang Q, Oswald IW, Yang X, Zhou G, Jia H, Qiao Q, Chen Y, Hoshikawa-Halbert J, Gnade BE. A non-doped phosphorescent organic light-emitting device with above 31% external quantum efficiency. Advanced Materials (Deerfield Beach, Fla.). 26: 8107-13. PMID 25219957 DOI: 10.1002/Adma.201402947 |
0.359 |
|
| 2014 |
Mao D, Mejia I, Salas-Villasenor AL, Stiegler HJ, Gnade BE, Quevedo-Lopez MA. Low temperature processed two-transistor-two-capacitor-based ferroelectric random access memory Ieee Transactions On Electron Devices. 61: 3442-3447. DOI: 10.1109/Ted.2014.2347053 |
0.802 |
|
| 2014 |
Murphy JW, Smith L, Calkins J, Kunnen GR, Mejia I, Cantley KD, Chapman RA, Sastré-Hernández J, Mendoza-Pérez R, Contreras-Puente G, Allee DR, Quevedo-Lopez M, Gnade B. Thin film cadmium telluride charged particle sensors for large area neutron detectors Applied Physics Letters. 105. DOI: 10.1063/1.4895925 |
0.358 |
|
| 2014 |
Wang Q, Ma D, Leo K, Ding J, Wang L, Qiao Q, Jia H, Gnade BE. Using interlayer step-wise triplet transfer to achieve an efficient white organic light-emitting diode with high color-stability Applied Physics Letters. 104. DOI: 10.1063/1.4876215 |
0.307 |
|
| 2014 |
Ferrá-González SR, Berman-Mendoza D, García-Gutiérrez R, Castillo SJ, Ramírez-Bon R, Gnade BE, Quevedo-López MA. Optical and structural properties of CdS thin films grown by chemical bath deposition doped with Ag by ion exchange Optik. 125: 1533-1536. DOI: 10.1016/J.Ijleo.2013.08.035 |
0.393 |
|
| 2014 |
Lee S, Iyore OD, Park S, Lee YG, Jandhyala S, Kang CG, Mordi G, Kim Y, Quevedo-Lopez M, Gnade BE, Wallace RM, Lee BH, Kim J. Rigid substrate process to achieve high mobility in graphene field-effect transistors on a flexible substrate Carbon. 68: 791-797. DOI: 10.1016/J.Carbon.2013.11.071 |
0.794 |
|
| 2014 |
Fuentes-Fernandez EMA, Salomon-Preciado AM, Gnade BE, Quevedo-Lopez MA, Shah P, Alshareef HN. Fabrication of relaxer-based piezoelectric energy harvesters using a sacrificial poly-Si seeding layer Journal of Electronic Materials. 43: 3898-3904. DOI: 10.1007/S11664-014-3308-X |
0.564 |
|
| 2014 |
Young CA, Saowsupa S, Hammack A, Tangonan AA, Anuragudom P, Jia H, Jamison AC, Panichphant S, Gnade BE, Lee TR. Synthesis and characterization of poly(2,5-didecyl-1,4-phenylene vinylene), poly(2,5-didecyloxy-1,4-phenylene vinylene), and their alternating copolymer Journal of Applied Polymer Science. 131: n/a-n/a. DOI: 10.1002/App.41162 |
0.323 |
|
| 2014 |
Wang Q, Oswald IWH, Perez MR, Jia H, Shahub AA, Qiao Q, Gnade BE, Omary MA. Organic Electronics: Doping-Free Organic Light-Emitting Diodes with Very High Power Efficiency, Simple Device Structure, and Superior Spectral Performance (Adv. Funct. Mater. 30/2014) Advanced Functional Materials. 24: 4722-4722. DOI: 10.1002/Adfm.201470196 |
0.339 |
|
| 2014 |
Wang Q, Oswald IWH, Perez MR, Jia H, Shahub AA, Qiao Q, Gnade BE, Omary MA. Doping-free organic light-emitting diodes with very high power efficiency, simple device structure, and superior spectral performance Advanced Functional Materials. 24: 4746-4752. DOI: 10.1002/Adfm.201400597 |
0.401 |
|
| 2013 |
Noriega JR, Iyore OD, Budime C, Gnade B, Vasselli J. Characterization system for research on energy storage capacitors. The Review of Scientific Instruments. 84: 055109. PMID 23742591 DOI: 10.1063/1.4804165 |
0.81 |
|
| 2013 |
Gutierrez-Heredia G, Mejia I, Hernandez-Como N, Rivas-Aguilar ME, Martinez-Landeros VH, Aguirre-Tostado FS, Gnade BE, Quevedo M. Low temperature ZnO TFTs fabrication with Al and AZO contacts for flexible transparent applications Materials Research Society Symposium Proceedings. 1494: 299-303. DOI: 10.1557/Opl.2013.102 |
0.477 |
|
| 2013 |
Mejia I, Salas-Villasenor AL, Murphy JW, Kunnen GR, Cantley KD, Allee DR, Gnade BE, Quevedo-Lopez MA. High-performance logic circuits using solution-based, low-temperature semiconductors for flexible electronics Proceedings of Spie - the International Society For Optical Engineering. 8730. DOI: 10.1117/12.2015996 |
0.81 |
|
| 2013 |
Murphy JW, Eddy A, Kunnen GR, Mejia I, Cantley KD, Allee DR, Quevedo-Lopez MA, Gnade BE. Sol gel ZnO films doped with Mg and Li evaluated for charged particle detectors Proceedings of Spie - the International Society For Optical Engineering. 8730. DOI: 10.1117/12.2015856 |
0.431 |
|
| 2013 |
Mejia I, Salas-Villasenor AL, Cha D, Alshareef HN, Gnade BE, Quevedo-Lopez MA. Fabrication and characterization of high-mobility solution-based chalcogenide thin-film transistors Ieee Transactions On Electron Devices. 60: 327-332. DOI: 10.1109/Ted.2012.2228200 |
0.827 |
|
| 2013 |
Jandhyala S, Mordi G, Mao D, Ha MW, Quevedo-Lopez MA, Gnade BE, Kim J. Graphene-ferroelectric hybrid devices for multi-valued memory system Applied Physics Letters. 103. DOI: 10.1063/1.4813264 |
0.522 |
|
| 2013 |
Iyore OD, Roodenko K, Winkler PS, Noriega JR, Vasselli JJ, Chabal YJ, Gnade BE. Comparison of neat and photo-crosslinked polyvinylidene fluoride-co-hexafluoropropylene thin film dielectrics formed by spin-coating Thin Solid Films. 548: 597-602. DOI: 10.1016/J.Tsf.2013.09.062 |
0.78 |
|
| 2013 |
Ai Y, Gowrisanker S, Jia H, Quevedo-Lopez M, Alshareef HN, Wallace RM, Gnade BE. Encapsulation of high frequency organic Schottky diodes Thin Solid Films. 531: 509-512. DOI: 10.1016/J.Tsf.2012.12.117 |
0.808 |
|
| 2013 |
Martinez-Landeros VH, Gutierrez-Heredia G, Aguirre-Tostado FS, Sotelo-Lerma M, Gnade BE, Quevedo-Lopez MA. Degradation of pentacene deposited on gold, aluminum and parylene surfaces: Impact of pentacene thickness Thin Solid Films. 531: 398-403. DOI: 10.1016/J.Tsf.2012.12.061 |
0.436 |
|
| 2013 |
Mao D, Mejia I, Salas-Villasenor AL, Singh M, Stiegler H, Gnade BE, Quevedo-Lopez MA. Ferroelectric random access memory based on one-transistor-one-capacitor structure for flexible electronics Organic Electronics: Physics, Materials, Applications. 14: 505-510. DOI: 10.1016/J.Orgel.2012.10.035 |
0.794 |
|
| 2013 |
Morales-Acosta MD, Alvarado-Beltrán CG, Quevedo-López MA, Gnade BE, Mendoza-Galván A, Ramírez-Bon R. Adjustable structural, optical and dielectric characteristics in sol-gel PMMA-SiO2 hybrid films Journal of Non-Crystalline Solids. 362: 124-135. DOI: 10.1016/J.Jnoncrysol.2012.11.025 |
0.424 |
|
| 2013 |
Wang Q, Oswald IWH, Perez MR, Jia H, Gnade BE, Omary MA. Exciton and polaron quenching in doping-free phosphorescent organic light-emitting diodes from a Pt(II)-based fast phosphor Advanced Functional Materials. 23: 5420-5428. DOI: 10.1002/Adfm.201300699 |
0.375 |
|
| 2013 |
Carrillo-Castillo A, Aguirre-Tostado FS, Salas-Villasenor A, Mejia I, Gnade BE, Sotelo-Lerma M, Quevedo-Lopez MA. Effect of chemical bath deposition parameters on the growth of pbs thin films for tfts applications Chalcogenide Letters. 10: 105-111. |
0.329 |
|
| 2012 |
Murphy JW, Mejia I, Gnade BE, Quevedo-Lopez MA. Evaluation of CdS interfacial layers in ZnO nanowire/poly(3-hexylthiophene) solar cells Journal of Nanomaterials. 2012. DOI: 10.1155/2012/192456 |
0.439 |
|
| 2012 |
Mejia I, Salas-Villasenor AL, Avendano-Bolivar A, Gnade BE, Quevedo-Lopez MA. Modeling and SPICE simulation of CdS-pentacene hybrid CMOS TFTs 2012 8th International Caribbean Conference On Devices, Circuits and Systems, Iccdcs 2012. DOI: 10.1109/ICCDCS.2012.6188882 |
0.79 |
|
| 2012 |
Gutierrez-Heredia G, Martinez-Landeros VH, Aguirre-Tostado FS, Shah P, Gnade BE, Sotelo-Lerma M, Quevedo-Lopez MA. Full bridge circuit based on pentacene schottky diodes fabricated on plastic substrates Semiconductor Science and Technology. 27. DOI: 10.1088/0268-1242/27/8/085013 |
0.387 |
|
| 2012 |
Salas-Villasenor AL, Mejia I, Sotelo-Lerma M, Gnade BE, Quevedo-Lopez MA. Performance and stability of solution-based cadmium sulfide thin film transistors: Role of CdS cluster size and film composition Applied Physics Letters. 101. DOI: 10.1063/1.4773184 |
0.789 |
|
| 2012 |
Murphy JW, Kunnen GR, Mejia I, Quevedo-Lopez MA, Allee D, Gnade B. Optimizing diode thickness for thin-film solid state thermal neutron detectors Applied Physics Letters. 101. DOI: 10.1063/1.4757292 |
0.398 |
|
| 2012 |
Bhansali US, Jia H, Oswald IWH, Omary MA, Gnade BE. High efficiency warm-white organic light emitting diodes from a single emitter in graded-doping device architecture Applied Physics Letters. 100. DOI: 10.1063/1.3702452 |
0.773 |
|
| 2012 |
Carrillo-Castillo A, Salas-Villasenor A, Mejia I, Aguirre-Tostado S, Gnade BE, Quevedo-López MA. P-type thin films transistors with solution-deposited lead sulfide films as semiconductor Thin Solid Films. 520: 3107-3110. DOI: 10.1016/J.Tsf.2011.12.016 |
0.826 |
|
| 2012 |
Perez MR, Mejia I, Salas-Villasenor AL, Stiegler H, Trachtenberg I, Gnade BE, Quevedo-Lopez MA. Hybrid CMOS thin-film devices based on solution-processed CdS n-TFTs and TIPS-Pentacene p-TFTs Organic Electronics: Physics, Materials, Applications. 13: 3045-3049. DOI: 10.1016/J.Orgel.2012.08.015 |
0.818 |
|
| 2012 |
Ratanatawanate C, Perez M, Gnade BE, Balkus KJ. Layer-by-layer assembly of titanate nanosheets/poly- (ethylenimine) on PEN films Materials Letters. 66: 242-245. DOI: 10.1016/J.Matlet.2011.08.089 |
0.395 |
|
| 2011 |
Quevedo-Lopez MA, Wondmagegn WT, Alshareef HN, Ramirez-Bon R, Gnade BE. Thin film transistors for flexible electronics: contacts, dielectrics and semiconductors. Journal of Nanoscience and Nanotechnology. 11: 5532-8. PMID 21770215 DOI: 10.1166/Jnn.2011.3425 |
0.547 |
|
| 2011 |
Mejia I, Salas-Villasenor AL, Avendano-Bolivar A, Horvath J, Stiegler H, Gnade BE, Quevedo-Lopez MA. Low-temperature hybrid CMOS circuits based on chalcogenides and organic TFTs Ieee Electron Device Letters. 32: 1086-1088. DOI: 10.1109/Led.2011.2157801 |
0.813 |
|
| 2011 |
Dey A, Avendanno A, Venugopal S, Allee DR, Quevedo M, Gnade B. CMOS TFT Op-Amps: Performance and Limitations Ieee Electron Device Letters. DOI: 10.1109/Led.2011.2121891 |
0.415 |
|
| 2011 |
Mendivil-Reynoso T, Berman-Mendoza D, González LA, Castillo SJ, Apolinar-Iribe A, Gnade BE, Quevedo-Lopez M, Ramírez-Bon R. Fabrication and electrical characteristics of TFTs based on chemically deposited CdS films, using glycine as a complexing agent Semiconductor Science and Technology. 26: 115010. DOI: 10.1088/0268-1242/26/11/115010 |
0.491 |
|
| 2011 |
Wondmagegn WT, Satyala NT, Mejia-Silva I, Mao D, Gowrisanker S, Alshareef HN, Stiegler HJ, Quevedo-Lopez MA, Pieper RJ, Gnade BE. Experimental and modeling study of the capacitance-voltage characteristics of metal-insulator-semiconductor capacitor based on pentacene/parylene Thin Solid Films. 519: 4313-4318. DOI: 10.1016/J.Tsf.2011.02.014 |
0.808 |
|
| 2011 |
Wondmagegn WT, Satyala NT, Stiegler HJ, Quevedo-Lopez MA, Forsythe EW, Pieper RJ, Gnade BE. Simulation based performance comparison of transistors designed using standard photolithographic and coarse printing design specifications Thin Solid Films. 519: 1943-1949. DOI: 10.1016/J.Tsf.2010.10.020 |
0.362 |
|
| 2011 |
Fuentes-Fernandez E, Baldenegro-Perez L, Quevedo-Lopez M, Gnade B, Hande A, Shah P, Alshareef HN. Optimization of Pb(Zr0.53,Ti0.47)O3 films for micropower generation using integrated cantilevers Solid-State Electronics. 63: 89-93. DOI: 10.1016/J.Sse.2011.05.027 |
0.593 |
|
| 2011 |
Mao D, Mejia I, Stiegler H, Gnade BE, Quevedo-Lopez MA. Fatigue characteristics of poly(vinylidene fluoride-trifluoroethylene) copolymer ferroelectric thin film capacitors for flexible electronics memory applications Organic Electronics: Physics, Materials, Applications. 12: 1298-1303. DOI: 10.1016/J.Orgel.2011.04.011 |
0.567 |
|
| 2011 |
Medina-Montes MI, Lee SH, Pérez M, Baldenegro-Pérez LA, Quevedo-López MA, Gnade B, Ramírez-Bon R. Effect of Sputtered ZnO Layers on Behavior of Thin-Film Transistors Deposited at Room Temperature in a Nonreactive Atmosphere Journal of Electronic Materials. 40: 1461-1469. DOI: 10.1007/S11664-011-1608-Y |
0.468 |
|
| 2011 |
Fuentes-Fernandez E, Debray-Mechtaly W, Quevedo-Lopez MA, Gnade B, Rajasekaran A, Hande A, Shah P, Alshareef HN. Fabrication and characterization of Pb(Zr 0.53,Ti 0.47)O 3-Pb(Nb 1/3,Zn 2/3)O 3 thin films on cantilever stacks Journal of Electronic Materials. 40: 85-91. DOI: 10.1007/S11664-010-1407-X |
0.58 |
|
| 2011 |
Martínez-Landeros VH, Gnade BE, Quevedo-López MA, Ramírez-Bon R. Permeation studies on transparent multiple hybrid SiO2-PMMA coatings-Al2O3 barriers on PEN substrates Journal of Sol-Gel Science and Technology. 59: 345-351. DOI: 10.1007/S10971-011-2509-5 |
0.407 |
|
| 2011 |
Morales-Acosta MD, Quevedo-López MA, Gnade BE, Ramírez-Bon R. PMMA-SiO2 organic-inorganic hybrid films: Determination of dielectric characteristics Journal of Sol-Gel Science and Technology. 58: 218-224. DOI: 10.1007/S10971-010-2380-9 |
0.482 |
|
| 2011 |
Wondmagegn WT, Satyala NT, Pieper RJ, Quevedo-Lopez MA, Gowrisanker S, Alshareef HN, Stiegler HJ, Gnade BE. Impact of semiconductor/metal interfaces on contact resistance and operating speed of organic thin film transistors Journal of Computational Electronics. 10: 144-153. DOI: 10.1007/S10825-010-0311-1 |
0.8 |
|
| 2010 |
Ramos-González R, Garcia-Cerda LA, Alshareef HN, Gnade BE, Quevedo-Lopez MA. Study of hafnium (IV) oxide nanoparticles synthesized by polymerized complex and polymer precursor derived sol-gel methods Materials Science Forum. 644: 75-78. DOI: 10.4028/Www.Scientific.Net/Msf.644.75 |
0.475 |
|
| 2010 |
Morales-Acosta MD, Quevedo-Lopez MA, Alshareef HN, Gnade B, Ramirez-Bon R. Dielectric properties of PMMA-SiO2 hybrid films Materials Science Forum. 644: 25-28. DOI: 10.4028/Www.Scientific.Net/Msf.644.25 |
0.597 |
|
| 2010 |
García-Cerda LA, Puente-Urbina BA, Quevedo-López MA, Gnade BE, Baldenegro-Pérez L, Alshareef HN, Hernández-Landaverde MA. Structural and morphological properties of HfxZr 1-xO2 thin films prepared by Pechini route Materials Science Forum. 644: 113-116. DOI: 10.4028/Www.Scientific.Net/Msf.644.113 |
0.58 |
|
| 2010 |
Gupta RP, Xiong K, White JB, Cho K, Gnade BE. Improvement in Contact Resistivity to thin film Bi 2 Te 3 Mrs Proceedings. 1267. DOI: 10.1557/Proc-1267-Dd05-20 |
0.41 |
|
| 2010 |
Salas-Villasenor AL, Mejia I, Hovarth J, Alshareef HN, Cha DK, Ramirez-Bon R, Gnade BE, Quevedo-Lopez MA. Impact of gate dielectric in carrier mobility in low temperature chalcogenide thin film transistors for flexible electronics Electrochemical and Solid-State Letters. 13. DOI: 10.1149/1.3456551 |
0.832 |
|
| 2010 |
Gupta RP, Xiong K, White JB, Cho K, Alshareef HN, Gnade BE. Low resistance ohmic contacts to Bi2 Te3 using Ni and Co metallization Journal of the Electrochemical Society. 157: H666-H670. DOI: 10.1149/1.3385154 |
0.553 |
|
| 2010 |
Gutiérrez-Heredia G, González LA, Alshareef HN, Gnade BE, Quevedo-López M. A flexible organic active matrix circuit fabricated using novel organic thin film transistors and organic light-emitting diodes Semiconductor Science and Technology. 25. DOI: 10.1088/0268-1242/25/11/115001 |
0.602 |
|
| 2010 |
Xiong K, Wang W, Alshareef HN, Gupta RP, White JB, Gnade BE, Cho K. Electronic structures and stability of Ni/Bi2Te3 and Co/Bi2Te3 interfaces Journal of Physics D: Applied Physics. 43. DOI: 10.1088/0022-3727/43/11/115303 |
0.494 |
|
| 2010 |
Mao D, Mejia I, Stiegler H, Gnade BE, Quevedo-Lopez MA. Polarization behavior of poly(vinylidene fluoride-trifluoroethylene) copolymer ferroelectric thin film capacitors for nonvolatile memory application in flexible electronics Journal of Applied Physics. 108. DOI: 10.1063/1.3500428 |
0.551 |
|
| 2010 |
Palaniappan K, Murphy JW, Sista P, Gnade BE, Biewer MC, Stefan MC. Poly(3-hexylthiophene)-CdSe quantum dot bulk heterojunction solar cells: The influence of the functional end-group of the polymer Acs National Meeting Book of Abstracts. DOI: 10.1021/Ma9006285 |
0.314 |
|
| 2010 |
Arreola-Jardón G, González LA, García-Cerda LA, Gnade B, Quevedo-López MA, Ramírez-Bon R. Ammonia-free chemically deposited CdS films as active layers in thin film transistors Thin Solid Films. 519: 517-520. DOI: 10.1016/J.Tsf.2010.08.097 |
0.478 |
|
| 2010 |
Morales-Fernández IE, Medina-Montes MI, González LA, Gnade B, Quevedo-López MA, Ramírez-Bon R. Electrical behavior of p-type PbS-based metal-oxide-semiconductor thin film transistors Thin Solid Films. 519: 512-516. DOI: 10.1016/J.Tsf.2010.08.092 |
0.503 |
|
| 2010 |
Mao D, Quevedo-Lopez MA, Stiegler H, Gnade BE, Alshareef HN. Optimization of poly(vinylidene fluoride-trifluoroethylene) films as non-volatile memory for flexible electronics Organic Electronics: Physics, Materials, Applications. 11: 925-932. DOI: 10.1016/J.Orgel.2010.02.012 |
0.713 |
|
| 2009 |
Trivedi K, Bhansali US, Gnade B, Hu W. The fabrication of high density nanochannel organic light emitting diodes with reduced charge spreading Nanotechnology. 20. PMID 19738307 DOI: 10.1088/0957-4484/20/40/405204 |
0.776 |
|
| 2009 |
Xiong K, Wang W, Alshareef HN, Gupta RP, White JB, Gnade BE, Cho K. First Principles Study of Metal/Bi2Te3Interfaces: Implications to Improve Contact Resistance Mrs Proceedings. 1166. DOI: 10.1557/Proc-1166-N05-01 |
0.504 |
|
| 2009 |
Quevedo-Lopez MA, Gowrisanker S, Allee DR, Venugopal S, Krishna R, Kaftanoglu K, Alshareef HN, Gnade BE. Novel materials and integration schemes for CMOS-based circuits for flexible electronics Ecs Transactions. 25: 503-511. DOI: 10.1149/1.3203989 |
0.8 |
|
| 2009 |
Gupta RP, Iyore OD, Xiong K, White JB, Cho K, Alshareef HN, Gnade BE. Interface characterization of cobalt contacts on bismuth selenium telluride for thermoelectric devices Electrochemical and Solid-State Letters. 12: H395-H397. DOI: 10.1149/1.3196237 |
0.792 |
|
| 2009 |
Gupta RP, White JB, Iyore OD, Chakrabarti U, Alshareef HN, Gnade BE. Determination of contact resistivity by the cox and strack method for metal contacts to bulk bismuth antimony telluride Electrochemical and Solid-State Letters. 12: H302-H304. DOI: 10.1149/1.3143918 |
0.783 |
|
| 2009 |
Gowrisanker S, Ai Y, Jia H, Quevedo-Lopez MA, Alshareef HN, Trachtenberg I, Stiegler H, Edwards H, Barnett R, Gnade BE. Organic thin-film transistors with low threshold voltage variation on low-temperature substrates Electrochemical and Solid-State Letters. 12. DOI: 10.1149/1.3046068 |
0.823 |
|
| 2009 |
Gowrisanker S, Quevedo-Lopez MA, Alshareef HN, Gnade B, Venugopal S, Krishna R, Kaftanoglu K, Allee D. Low temperature integration of hybrid CMOS devices on plastic substrates 2009 Flexible Electronics and Displays Conference and Exhibition, Flex 2009. DOI: 10.1109/FEDC.2009.5069280 |
0.819 |
|
| 2009 |
Bhansali US, Polikarpov E, Swensen JS, Chen WH, Jia H, Gaspar DJ, Gnade BE, Padmaperuma AB, Omary MA. High-efficiency turquoise-blue electrophosphorescence from a Pt(II)-pyridyltriazolate complex in a phosphine oxide host Applied Physics Letters. 95. DOI: 10.1063/1.3268434 |
0.762 |
|
| 2009 |
Bhansali US, Jia H, Lopez MAQ, Gnade BE, Chen WH, Omary MA. Controlling the carrier recombination zone for improved color stability in a two-dopant fluorophore/phosphor white organic light-emitting diode Applied Physics Letters. 94. DOI: 10.1063/1.3089867 |
0.757 |
|
| 2009 |
Bhansali US, Quevedo Lopez MA, Jia H, Alshareef HN, Cha D, Kim MJ, Gnade BE. Characterization of organic thin films using transmission electron microscopy and Fourier Transform Infra Red spectroscopy Thin Solid Films. 517: 5825-5829. DOI: 10.1016/J.Tsf.2009.03.002 |
0.81 |
|
| 2009 |
Gowrisanker S, Quevedo-Lopez MA, Alshareef HN, Gnade BE, Venugopal S, Krishna R, Kaftanoglu K, Allee DR. A novel low temperature integration of hybrid CMOS devices on flexible substrates Organic Electronics: Physics, Materials, Applications. 10: 1217-1222. DOI: 10.1016/J.Orgel.2009.06.012 |
0.817 |
|
| 2009 |
Gowrisanker S, Quevedo-Lopez MA, Alshareef HN, Gnade BE. Time dependent breakdown characteristics of parylene dielectric in metal-insulator-metal capacitors Organic Electronics: Physics, Materials, Applications. 10: 1024-1027. DOI: 10.1016/J.Orgel.2009.05.003 |
0.8 |
|
| 2009 |
Iyore OD, Lee TH, Gupta RP, White JB, Alshareef HN, Kim MJ, Gnade BE. Interface characterization of nickel contacts to bulk bismuth tellurium selenide Surface and Interface Analysis. 41: 440-444. DOI: 10.1002/Sia.3046 |
0.768 |
|
| 2009 |
Xiong K, Wang W, Alshareef HN, Gupta RP, White JB, Gnade BE, Cho K. First principles study of metal/Bi2Te3 interfaces: Implications to reduce contact resistance Materials Research Society Symposium Proceedings. 1166: 103-108. |
0.437 |
|
| 2008 |
Xiong C, Aliev AE, Gnade B, Balkus KJ. Fabrication of silver vanadium oxide and V2O5 nanowires for electrochromics. Acs Nano. 2: 293-301. PMID 19206630 DOI: 10.1021/Nn700261C |
0.364 |
|
| 2008 |
Alshareef HN, Quevedo-Lopez M, Wen HC, Huffman C, El-Bouanani M, Gnade BE. Impact of carbon incorporation on the effective work function of WN and TaN metal gate electrodes Electrochemical and Solid-State Letters. 11. DOI: 10.1149/1.2908579 |
0.471 |
|
| 2008 |
Gowrisanker S, Ai Y, Quevedo-Lopez MA, Jia H, Vogel E, Gnade B. A gate dielectric last approach to integrate organic based devices on plastic substrates Proceedings of the Academic Track of the 2008 Flexible Electronics and Displays - Conference and Exhibition, Flex. DOI: 10.1109/FEDC.2008.4483882 |
0.787 |
|
| 2008 |
Zhao P, Kim MJ, Gnade BE, Wallace RM. Dopant effects on the thermal stability of FUSI NiSi Microelectronic Engineering. 85: 54-60. DOI: 10.1016/J.Mee.2007.05.001 |
0.355 |
|
| 2008 |
Liu HA, Gnade BE, Balkus KJ. A delivery system for self-healing inorganic films Advanced Functional Materials. 18: 3620-3629. DOI: 10.1002/Adfm.200701470 |
0.37 |
|
| 2007 |
Böscke TS, Govindarajan S, Kirsch PD, Hung PY, Krug C, Lee BH, Heitmann J, Schröder U, Pant G, Gnade BE, Krautschneider WH. Stabilization of higher- κ tetragonal Hf O2 by Si O2 admixture enabling thermally stable metal-insulator-metal capacitors Applied Physics Letters. 91. DOI: 10.1063/1.2771376 |
0.354 |
|
| 2007 |
Ai Y, Gowrisanker S, Jia H, Trachtenberg I, Vogel E, Wallace RM, Gnade BE, Barnett R, Stiegler H, Edwards H. 14 MHz organic diodes fabricated using photolithographic processes Applied Physics Letters. 90. DOI: 10.1063/1.2752533 |
0.803 |
|
| 2007 |
Jia H, Gross EK, Wallace RM, Gnade BE. Patterning effects on poly (3-hexylthiophene) organic thin film transistors using photolithographic processes Organic Electronics: Physics, Materials, Applications. 8: 44-50. DOI: 10.1016/J.Orgel.2006.10.009 |
0.408 |
|
| 2006 |
Hussain MM, Quevedo-Lopez MA, Alshareef HN, Larison D, Mathur K, Gnade BE. Deposition method-induced stress effect on ultrathin titanium nitride etch characteristics Electrochemical and Solid-State Letters. 9: 361-363. DOI: 10.1149/1.2359100 |
0.562 |
|
| 2006 |
Jia H, Gowrisanker S, Pant GK, Wallace RM, Gnade BE. Effect of poly (3-hexylthiophene) film thickness on organic thin film transistor properties Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 24: 1228-1232. DOI: 10.1116/1.2202858 |
0.806 |
|
| 2006 |
Hussain MM, Quevedo-Lopez MA, Alshareef HN, Wen HC, Larison D, Gnade B, El-Bouanani M. Thermal annealing effects on a representative high-k/metal film stack Semiconductor Science and Technology. 21: 1437-1440. DOI: 10.1088/0268-1242/21/10/012 |
0.6 |
|
| 2006 |
Sivasubramani P, Kim J, Kim MJ, Gnade BE, Wallace RM. Effect of nitrogen incorporation on the thermal stability of sputter deposited lanthanum aluminate dielectrics on Si (100) Applied Physics Letters. 89. DOI: 10.1063/1.2361170 |
0.311 |
|
| 2006 |
Pant G, Gnade A, Kim MJ, Wallace RM, Gnade BE, Quevedo-Lopez MA, Kirsch PD, Krishnan S. Comparison of electrical and chemical characteristics of ultrathin HfON versus HfSiON dielectrics Applied Physics Letters. 89. DOI: 10.1063/1.2226991 |
0.397 |
|
| 2006 |
Alshareef HN, Choi K, Wen HC, Luan H, Harris H, Senzaki Y, Majhi P, Lee BH, Jammy R, Aguirre-Tostado S, Gnade BE, Wallace RM. Composition dependence of the work function of Ta1-xAl xNymetal gates Applied Physics Letters. 88. DOI: 10.1063/1.2174836 |
0.42 |
|
| 2006 |
Pant G, Gnade A, Kim MJ, Wallace RM, Gnade BE, Quevedo-Lopez MA, Kirsch PD. Effect of thickness on the crystallization of ultrathin HfSiON gate dielectrics Applied Physics Letters. 88: 1-3. DOI: 10.1063/1.2165182 |
0.405 |
|
| 2006 |
Jeon J, Gory I, Skidmore G, Kim MJ, Gnade BE. Demonstration of pick and place assembly for scaled MEMS devices Microscopy and Microanalysis. 12: 560-561. DOI: 10.1017/S143192760606884X |
0.306 |
|
| 2006 |
Jia H, Pant GK, Gross EK, Wallace RM, Gnade BE. Gate induced leakage and drain current offset in organic thin film transistors Organic Electronics: Physics, Materials, Applications. 7: 16-21. DOI: 10.1016/J.Orgel.2005.10.003 |
0.409 |
|
| 2006 |
Zheng T, Jia H, Wallace RM, Gnade BE. Characterization of conductance under finite bias for a self-assembled monolayer coated Au quantized point contact Applied Surface Science. 253: 1265-1268. DOI: 10.1016/J.Apsusc.2006.01.070 |
0.323 |
|
| 2005 |
Panhuis Mi, Gowrisanker S, Vanesko DJ, Mire CA, Jia H, Xie H, Baughman RH, Musselman IH, Gnade BE, Dieckmann GR, Draper RK. Nanotube network transistors from peptide-wrapped single-walled carbon nanotubes. Small (Weinheim An Der Bergstrasse, Germany). 1: 820-3. PMID 17193531 DOI: 10.1002/Smll.200500001 |
0.722 |
|
| 2005 |
Nistorica C, Gory I, Skidmore GD, Mantiziba FM, Gnade BE. Friction and wear properties of ALD coated MEMS Materials Research Society Symposium Proceedings. 841: 265-270. DOI: 10.1557/Proc-841-R9.16 |
0.768 |
|
| 2005 |
Nistorica C, Liu JF, Gory I, Skidmore GD, Mantiziba FM, Gnade BE, Kim J. Tribological and wear studies of coatings fabricated by atomic layer deposition and by successive ionic layer adsorption and reaction for microelectromechanical devices Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 23: 836-840. DOI: 10.1116/1.1885022 |
0.794 |
|
| 2005 |
Kim MJ, Wallace RM, Gnade BE. HRTEM for nano-electronic materials research Aip Conference Proceedings. 788: 558-564. DOI: 10.1063/1.2063018 |
0.353 |
|
| 2005 |
Sivasubramani P, Zhao P, Kim MJ, Gnade BE, Wallace RM, Edge LF, Schlom DG, Parsons GN, Misra V. Thermal stability studies of advanced gate stack structures on Si (100) Aip Conference Proceedings. 788: 156-160. DOI: 10.1063/1.2062955 |
0.413 |
|
| 2005 |
Quevedo-Lopez MA, Visokay MR, Chambers JJ, Bevan MJ, LiFatou A, Colombo L, Kim MJ, Gnade BE, Wallace RM. Dopant penetration studies through Hf silicate Journal of Applied Physics. 97. DOI: 10.1063/1.1846138 |
0.376 |
|
| 2005 |
Liu JF, Nistorica C, Gory I, Skidmore G, Mantiziba FM, Gnade BE. Layer-by-layer deposition of zirconium oxide films from aqueous solutions for friction reduction in silicon-based microelectromechanical system devices Thin Solid Films. 492: 6-12. DOI: 10.1016/J.Tsf.2005.06.014 |
0.799 |
|
| 2005 |
Driemeier C, Bastos KP, Soares GV, Miotti L, Pezzi RP, Baumvol IJR, Punchaipetch P, Pant G, Gnade BE, Wallace RM. Atomic transport and chemical stability of nitrogen in ultrathin HfSiON gate dielectrics Applied Physics a: Materials Science and Processing. 80: 1045-1047. DOI: 10.1007/S00339-004-3037-8 |
0.395 |
|
| 2005 |
Quevedo-Lopez MA, Krishnan SA, Kirsch PD, Li HJ, Sim JH, Huffman C, Peterson JJ, Lee BH, Pant G, Gnade BE, Kim MJ, Wallace RM, Guo D, Bu H, Ma TP. High performance gate first HfSiON dielectric satisfying 45nm node requirements Technical Digest - International Electron Devices Meeting, Iedm. 2005: 425-428. |
0.308 |
|
| 2004 |
Punchaipetch P, Pant G, Kim MJ, Wallace RM, Gnade BE. Growth and characterization of hafnlum silicate films prepared by UV/ozone oxidation Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 22: 395-400. DOI: 10.1116/1.1649346 |
0.436 |
|
| 2004 |
Punchaipetch P, Pant G, Quevedo-Lopez MA, Yao C, El-Bouanani M, Kim MJ, Wallace RM, Gnade BE. Low-temperature deposition of hafnium silicate gate dielectrics Ieee Journal On Selected Topics in Quantum Electronics. 10: 89-100. DOI: 10.1109/Jstqe.2004.824109 |
0.475 |
|
| 2004 |
Pezzi RP, Miotti L, Bastos KP, Soares GV, Driemeier C, Baumvol IJR, Punchaipetch P, Pant G, Gnade BE, Wallace RM, Rotondaro A, Visokay JM, Chambers JJ, Colombo L. Hydrogen and deuterium incorporation and transport in hafnium-based dielectric films on silicon Applied Physics Letters. 85: 3540-3542. DOI: 10.1063/1.1801682 |
0.339 |
|
| 2004 |
Pant G, Punchaipetch P, Kim MJ, Wallace RM, Gnade BE. Low temperature UV/ozone oxidation formation of HfSiON gate dielectric Thin Solid Films. 460: 242-246. DOI: 10.1016/J.Tsf.2004.01.109 |
0.458 |
|
| 2004 |
Addepalli S, Sivasubramani P, Kim MJ, Gnade BE, Wallace RM. The electrical properties and stability of the hafnium silicate/Si0.8Ge0.2(100) interface Journal of Electronic Materials. 33: 1016-1021. DOI: 10.1007/S11664-004-0029-6 |
0.462 |
|
| 2004 |
Addepalli S, Sivasubramani P, Kim MJ, Gnade BE, Wallace RM. The electrical properties and stability of the hafnium silicate/Si 0.8Ge 0.2(100) interface Journal of Electronic Materials. 33: 1016-1021. |
0.354 |
|
| 2003 |
Ranade A, D'Souza N, Gnade B, Thellen C, Orroth C, Froio D, Lucciarini J, Ratto JA. Effect of Coupling Agent on the Dispersion of PETG Montmorillonite Nanocomposite films. Mrs Proceedings. 791. DOI: 10.1557/Proc-791-Q8.26 |
0.395 |
|
| 2003 |
Ranade A, D'Souza NA, Gnade B, Dharia A. Nylon-6 and Montmorillonite-Layered Silicate (MLS) nanocomposites Journal of Plastic Film and Sheeting. 19: 271-285. DOI: 10.1177/8756087903042810 |
0.37 |
|
| 2003 |
Kim MJ, Huang J, Cha DK, Quevedo-Lopez MA, Wallace RM, Gnade BE. Thermal stability of Hf-based high-κ dielectric films on Si(100) Microscopy and Microanalysis. 9: 506-507. DOI: 10.1017/S1431927603442530 |
0.377 |
|
| 2003 |
Punchaipetch P, Pant G, Quevedo-Lopez M, Zhang H, El-Bouanani M, Kim MJ, Wallace RM, Gnade BE. Hafnium silicate formation by ultra-violet/ozone oxidation of hafnium silicide Thin Solid Films. 425: 68-71. DOI: 10.1016/S0040-6090(02)01306-8 |
0.409 |
|
| 2003 |
Zhang H, Gurang P, Sigh N, Manuel Q, Wallace R, Gnade B, Stokes K. The effect of small-signal AC voltages on C–V characterization and parameter extraction of SiO2 thin films Microelectronics Reliability. 43: 1981-1985. DOI: 10.1016/S0026-2714(03)00370-6 |
0.367 |
|
| 2002 |
Quevedo-Lopez MA, El-Bouanani M, Gnade BE, Colombo L, Bevan M, Douglas M, Visokay M, Wallace RM. Interfacial diffusion studies of Hf and Zr into Si from thermally annealed Hf and Zr silicates Materials Research Society Symposium - Proceedings. 686: 223-228. DOI: 10.1557/Proc-686-A9.5 |
0.422 |
|
| 2002 |
Quevedo-Lopez MA, El-Bouanani M, Wallace RM, Gnade BE. Wet chemical etching studies of Zr and Hf-silicate gate dielectrics Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 20: 1891-1897. DOI: 10.1116/1.1507343 |
0.411 |
|
| 2002 |
Quevedo-Lopez MA, El-Bouanani M, Kim MJ, Gnade BE, Wallace RM, Visokay MR, Li-Fatou A, Bevan MJ, Colombo L. Phosphorus and arsenic penetration studies through HfSixO y and HfSixOyNz films Applied Physics Letters. 81: 1609-1611. DOI: 10.1063/1.1502910 |
0.398 |
|
| 2002 |
Quevedo-Lopez MA, El-Bouanani M, Gnade BE, Wallace RM, Visokay MR, Douglas M, Bevan MJ, Colombo L. Interdiffusion studies for HfSi xO y and ZrSi xO y on Si Journal of Applied Physics. 92: 3540-3550. DOI: 10.1063/1.1501752 |
0.448 |
|
| 2002 |
Quevedo-Lopez MA, El-Bouanani M, Kim MJ, Gnade BE, Wallace RM, Visokay MR, Lifatou A, Bevan MJ, Colombo L. Boron penetration studies from p+ polycrystalline Si through HfSixOy Applied Physics Letters. 81: 1074-1076. DOI: 10.1063/1.1498872 |
0.311 |
|
| 2002 |
Gnade BE, Pant G, Punchaipetch P, Wallace RM. Low temperature deposition of Hafnium silicate gate dielectrics for TFTs on plastic substrates Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 1: 305-306. |
0.329 |
|
| 2001 |
Quevedo-Lopez M, El-Bouanani M, Addepalli S, Duggan JL, Gnade BE, Wallace RM, Visokay MR, Douglas M, Colombo L. Hafnium interdiffusion studies from hafnium silicate into silicon Applied Physics Letters. 79: 4192-4194. DOI: 10.1063/1.1425466 |
0.38 |
|
| 2001 |
Quevedo-Lopez M, El-Bouanani M, Addepalli S, Duggan JL, Gnade BE, Wallace RM, Visokay MR, Douglas M, Bevan MJ, Colombo L. Thermally induced Zr incorporation into Si from zirconium silicate thin films Applied Physics Letters. 79: 2958-2960. DOI: 10.1063/1.1415418 |
0.405 |
|
| 2000 |
Chalamala BR, Wei Y, Reuss RH, Aggarwal S, Perusse SR, Gnade BE, Ramesh R. Stability and chemical composition of thermally grown iridium-oxide thin films Journal of Vacuum Science & Technology B. 18: 1919-1922. DOI: 10.1116/1.1303814 |
0.379 |
|
| 2000 |
Chalamala BR, Reuss RH, Gnade BE. Displaying a bright future Ieee Circuits and Devices Magazine. 16: 19-30. DOI: 10.1109/101.845909 |
0.352 |
|
| 1999 |
Chalamala BR, Wei Y, Reuss RH, Aggarwal S, Gnade BE, Ramesh R, Bernhard JM, Sosa ED, Golden DE. Effect Of Growth Conditions On Surface Morphology And Photoelectric Work Function Characteristics Of Iridium Oxide Thin Films Applied Physics Letters. 74: 1394-1396. DOI: 10.1063/1.123561 |
0.385 |
|
| 1997 |
Balkus KJ, Ball LJ, Gnade BE, Anthony JM. A Capacitance Type Chemical Sensor Based on AlPO4-5 Molecular Sieves Chemistry of Materials. 9: 380-386. DOI: 10.1021/Cm960041N |
0.336 |
|
| 1997 |
Balkus KJ, Ball LJ, Gimon-Kinsel ME, Mark Anthony J, Gnade BE. A capacitance-type chemical sensor that employs VAPO-5, MnAPO-5 and MAPO-36 molecular sieves as the dielectric phase Sensors and Actuators, B: Chemical. 42: 67-79. DOI: 10.1016/S0925-4005(97)80314-0 |
0.355 |
|
| 1995 |
Balkus KJ, Sottile LJ, Nguyen H, Riley SJ, Gnade BE. Molecular sieve based chemical sensors Materials Research Society Symposium - Proceedings. 371: 33-38. DOI: 10.1557/Proc-371-33 |
0.332 |
|
| 1995 |
Zhang L, Coffer JL, Gnade BE, Xu DX, Pinizzotto RF. Effects of local ambient atmosphere on the stability of electroluminescent porous silicon diodes Journal of Applied Physics. 77: 5936-5941. DOI: 10.1063/1.359550 |
0.384 |
|
| 1995 |
Balkus KJ, Sottile LJ, Riley SJ, Gnade BE. The preparation and characterization of AlPO4 thin films via laser ablation of AlPO4-H4 Thin Solid Films. 260: 4-9. DOI: 10.1016/0040-6090(95)09482-2 |
0.352 |
|
| 1994 |
Tsu R, Liu HY, Hsu WY, Summerfelt S, Aoki K, Gnade B. Correlations of Ba 1−x Sr x TiO 3 Materials and Dielectric Properties Mrs Proceedings. 361. DOI: 10.1557/Proc-361-275 |
0.436 |
|
| 1994 |
Wu Y, Jacobs EG, Pinizzotto RF, Tsu R, Liu HY, Summerfelt SR, Gnade BE. Microstructural and Electrical Characterization of Barium Strontium Titanate Thin Films Mrs Proceedings. 361: 269. DOI: 10.1557/Proc-361-269 |
0.381 |
|
| 1994 |
Zhang L, Coffer JL, Gnade BE, Xu D, Pinizzotto RF. The Influence of Local Ambient Atmosphere on the Electroluminescent Stability of Porous Silicon Diodes Mrs Proceedings. 358. DOI: 10.1557/Proc-358-671 |
0.385 |
|
| 1994 |
Balkus KJ, Riley SJ, Gnade BE. Molecular sieve thin films via laser ablation Materials Research Society Symposium - Proceedings. 351: 437-442. DOI: 10.1557/Proc-351-437 |
0.37 |
|
| 1993 |
Sleight JW, Reed MA, Cho C, Gnade B. Vertical conduction in thin Si/CaF2/Si structures Superlattices and Microstructures. 13: 365-365. DOI: 10.1006/Spmi.1993.1071 |
0.316 |
|
| 1992 |
Jacobs EG, Rho YG, Pinizzotto RF, Summerfelt SR, Gnade BE. Effect of a Ge Barrier on the Microstructure of BaTiO 3 Deposited on Silicon by Pulsed Laser Ablation Mrs Proceedings. 285. DOI: 10.1557/Proc-285-379 |
0.389 |
|
| 1992 |
Cho CC, Liu HY, Gnade BE, Kim TS, Nishioka Y. Epitaxial relations and electrical properties of low-temperature-grown CaF2 on Si(111) Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 10: 769-774. DOI: 10.1116/1.578161 |
0.305 |
|
| 1992 |
Chourasia AR, Chopra DR, Cho CC, Gnade BE. Angle resolved X-ray photoemission study of CaF2/Si(111) interfaces Surface Science. 275: 424-432. DOI: 10.1016/0039-6028(92)90815-N |
0.315 |
|
| 1991 |
Pinizzotto RF, Jacobs EG, Yang H, Summerfelt SR, Gnade BE. Cross-Sectional Tem Studies of Barium Strontium Titanate Deposited on Silicon by Pulsed Laser Ablation Mrs Proceedings. 243: 463. DOI: 10.1557/Proc-243-463 |
0.426 |
|
| 1990 |
Smith PB, Gnade BE, Marble DK. Hydrogen in metallo-organic chemically vapor-deposited ZnS thin films determined by nuclear resonance reaction analysis Thin Solid Films. 193: 280-288. DOI: 10.1016/S0040-6090(05)80037-9 |
0.346 |
|
| 1989 |
Carlisle JA, Chopra DR, Dillingham TR, Gnade B, Smith G. Study of the low‐pressure chemical‐vapor‐deposited tungsten‐silicon interface: Interfacial fluorine Journal of Applied Physics. 65: 2313-2320. DOI: 10.1063/1.342820 |
0.365 |
|
| 1987 |
Chopra DR, Chourasia AR, Dillingham TR, Peterson KL, Gnade B. Study of the Ti/Si interface using x-ray photoelectron and Auger electron appearance potential spectroscopies Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 5: 1984-1987. DOI: 10.1116/1.574899 |
0.369 |
|
| 1987 |
Dillingham TR, Chourasia AR, Chopra DR, Martin SR, Peterson KL, Gnade B, Hu CZ. X-ray photoelectron spectroscopy study of the ni/si oxide/si interface Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 5: 3340-3345. DOI: 10.1116/1.574193 |
0.353 |
|
| 1987 |
Gnade B, Simmons A, Little D, Strong R. Determination of the composition of HgCdTe oxide films by neutron activation analysis Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 24: 1014-1016. DOI: 10.1016/S0168-583X(87)80301-4 |
0.316 |
|
| 1986 |
Strong RL, Anthony JM, Gnade BE, Keenan JA, Norbeck E, Li LW, Helms CR. Composition and growth mechanism of anodic oxide on hg(1_x)cdxte Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 4: 1992-1996. DOI: 10.1116/1.574014 |
0.305 |
|
| 1985 |
Keenan JA, Gnade BE, White JB. Instrumental Neutron Activation Analysis of Processed Silicon Journal of the Electrochemical Society. 132: 2232-2236. DOI: 10.1149/1.2114326 |
0.303 |
|
| 1985 |
Tregilgas J, Beck J, Gnade B. Type conversion of (Hg,Cd)Te induced by the redistribution of residual acceptor impurities Journal of Vacuum Science and Technology. 3: 150-152. DOI: 10.1116/1.573188 |
0.317 |
|
| 1985 |
Schaake HF, Tregilgas JH, Beck JD, Kinch MA, Gnade BE. The effect of low temperature annealing on defects, impurities, and electrical properties of (Hg, Cd)Te Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 3: 143-149. DOI: 10.1116/1.573186 |
0.342 |
|
| Show low-probability matches. |
