| Year |
Citation |
Score |
| 2014 |
Kim J, Battaglia C, Charrière M, Hong A, Jung W, Park H, Ballif C, Sadana D. 9.4% efficient amorphous silicon solar cell on high aspect-ratio glass microcones. Advanced Materials (Deerfield Beach, Fla.). 26: 4082-6. PMID 24648188 DOI: 10.1002/Adma.201400186 |
0.331 |
|
| 2012 |
Kim J, Hong AJ, Chandra B, Tulevski GS, Sadana DK. Engineering of contact resistance between transparent single-walled carbon nanotube films and a-Si:H single junction solar cells by gold nanodots. Advanced Materials (Deerfield Beach, Fla.). 24: 1899-902. PMID 22388916 DOI: 10.1002/Adma.201104677 |
0.348 |
|
| 2012 |
Kim J, Hong AJ, Nah JW, Shin B, Ross FM, Sadana DK. Three-dimensional a-Si:H solar cells on glass nanocone arrays patterned by self-assembled Sn nanospheres. Acs Nano. 6: 265-71. PMID 22148324 DOI: 10.1021/Nn203536X |
0.341 |
|
| 2011 |
Hong AJ, Song EB, Yu HS, Allen MJ, Kim J, Fowler JD, Wassei JK, Park Y, Wang Y, Zou J, Kaner RB, Weiller BH, Wang KL. Graphene flash memory. Acs Nano. 5: 7812-7. PMID 21854056 DOI: 10.1021/Nn201809K |
0.657 |
|
| 2011 |
Kim J, Hong AJ, Kim SM, Shin KS, Song EB, Hwang Y, Xiu F, Galatsis K, Chui CO, Candler RN, Choi S, Moon JT, Wang KL. A stacked memory device on logic 3D technology for ultra-high-density data storage. Nanotechnology. 22: 254006. PMID 21572190 DOI: 10.1088/0957-4484/22/25/254006 |
0.679 |
|
| 2011 |
Hong AJ, Kim J, Kim K, Wang Y, Xiu F, Jeon J, Park J, Rauda I, Chen LM, Yang Y, Tolbert S, Zou J, Wang KL. Cr metal thin film memory Journal of Applied Physics. 110. DOI: 10.1063/1.3626901 |
0.509 |
|
| 2011 |
Kim J, Abou-Kandil AI, Hong AJ, Saad MM, Sadana DK, Chen TC. Efficiency enhancement of a-Si:H single junction solar cells by a-Ge:H incorporation at the p + a-SiC:H/transparent conducting oxide interface Applied Physics Letters. 99. DOI: 10.1063/1.3619185 |
0.3 |
|
| 2010 |
Tang J, Wang CY, Xiu F, Hong AJ, Chen S, Wang M, Zeng C, Yang HJ, Tuan HY, Tsai CJ, Chen LJ, Wang KL. Single-crystalline Ni2Ge/Ge/Ni2Ge nanowire heterostructure transistors. Nanotechnology. 21: 505704. PMID 21098938 DOI: 10.1088/0957-4484/21/50/505704 |
0.626 |
|
| 2010 |
Xiu F, Wang Y, Kim J, Hong A, Tang J, Jacob AP, Zou J, Wang KL. Electric-field-controlled ferromagnetism in high-Curie-temperature Mn0.05Ge0.95 quantum dots. Nature Materials. 9: 337-44. PMID 20208524 DOI: 10.1038/Nmat2716 |
0.534 |
|
| 2010 |
Hong AJ, Liu CC, Wang Y, Kim J, Xiu F, Ji S, Zou J, Nealey PF, Wang KL. Metal nanodot memory by self-assembled block copolymer lift-off. Nano Letters. 10: 224-9. PMID 19957954 DOI: 10.1021/Nl903340A |
0.562 |
|
| 2010 |
Wu Y, Bao M, Khitun A, Kim J, Hong A, Wang KL. A Three-Terminal Spin-Wave Device for Logic Applications Journal of Nanoelectronics and Optoelectronics. 4: 394-397. DOI: 10.1166/Jno.2009.1045 |
0.315 |
|
| 2009 |
Kim J, Hong AJ, Sung MK, Song EB, Jeung HP, Han J, Choi S, Jang D, Moon JT, Wang KL. Novel vertical-stacked-array-transistor (VSAT) for ultra-high-density and cost-effective NAND flash memory devices and SSD (solid state drive) Digest of Technical Papers - Symposium On Vlsi Technology. 186-187. |
0.688 |
|
| 2008 |
Khitun A, Bao M, Wu Y, Kim J, Hong A, Jacob AP, Galatsis K, Wang KL. Logic Devices with Spin Wave Buses - an Approach to Scalable Magneto-Electric Circuitry Mrs Proceedings. 1067. DOI: 10.1557/Proc-1067-B01-04 |
0.4 |
|
| 2008 |
Kim J, Hong AJ, Ogawa M, Siguang M, Song EB, Lin YS, Han J, Chung UI, Wang KL. Novel 3-D structure for ultra high density flash memory with VRAT (Vertical-Recess-Array-Transistor) and PIPE (Planarized Integration on the same PlanE) Digest of Technical Papers - Symposium On Vlsi Technology. 122-123. DOI: 10.1109/VLSIT.2008.4588587 |
0.672 |
|
| 2008 |
Hong AJ, Ogawa M, Wang KL, Wang Y, Zou J, Xu Z, Yang Y. Room temperature Si δ -growth on Ge incorporating high- K dielectric for metal oxide semiconductor applications Applied Physics Letters. 93. DOI: 10.1063/1.2957476 |
0.458 |
|
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