| Year |
Citation |
Score |
| 2013 |
Chen X, Guo D, Choa FS, Wang CC, Trivedi S, Snyder AP, Ru G, Fan J. Standoff photoacoustic detection of explosives using quantum cascade laser and an ultrasensitive microphone. Applied Optics. 52: 2626-32. PMID 23669670 DOI: 10.1364/Ao.52.002626 |
0.609 |
|
| 2006 |
Ji X, Cheng L, Cai J, Ru G, Choa FS. High power slab-coupled waveguide laser Proceedings of Spie - the International Society For Optical Engineering. 6343. DOI: 10.1117/12.708045 |
0.638 |
|
| 2006 |
Yan J, Cai J, Ru G, Yu X, Fan J, Choa FS. InGaAsP-InP dual-wavelength bipolar cascade lasers Ieee Photonics Technology Letters. 18: 1777-1779. DOI: 10.1109/Lpt.2006.880772 |
0.683 |
|
| 2006 |
Ru G, Choa FS, Wei X, Chen G, Khurgin JB. Measurement of the lifetimes of photo-excited carriers in type-I and type-II quantum well materials Conference On Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, Cleo/Qels 2006. DOI: 10.1109/CLEO.2006.4627932 |
0.485 |
|
| 2006 |
Cai J, Choa FS, Gu Y, Ji X, Yan J, Ru G, Cheng L, Fan J. Very low threshold, carrier-confined diode lasers by a single selective area growth Applied Physics Letters. 88. DOI: 10.1063/1.2200471 |
0.695 |
|
| 2005 |
Xie X, Khurgin J, Choa FS, Yu X, Cai J, Yan J, Ji X, Gu Y, Fang Y, Sun Y, Ru G, Chen Z. A model for optimization of the performance of frequency-modulated DFB semiconductor laser Ieee Journal of Quantum Electronics. 41: 473-482. DOI: 10.1109/Jqe.2005.844070 |
0.678 |
|
| 2005 |
Choa FS, Zhao X, Yu X, Lin J, Zhang JP, Gu Y, Ru G, Zhang G, Li L, Xiang H, Hadimioglu H, Chao HJ. An optical packet switch based on WDM technologies Journal of Lightwave Technology. 23: 994-1014. DOI: 10.1109/Jlt.2004.841459 |
0.587 |
|
| 2005 |
Ru G, Yu X, Chen Z, Zhang J, Lin J, Choa FS. Material quality improvements of ultra-broadband gain materials grown by selective-area-growth techniques Journal of Crystal Growth. 285: 499-505. DOI: 10.1016/j.jcrysgro.2005.08.051 |
0.512 |
|
| 2004 |
Ru G, Yu X, Cai J, Yan J, Choa FS. Robust slab-coupled buried-rib semiconductor laser with high fibre coupling efficiency Electronics Letters. 40: 1538-1539. DOI: 10.1049/el:20047171 |
0.506 |
|
| 2003 |
Yan J, Ru G, Choa FS. Study of N-Type Si Delta Doping on InP and In 0.53Ga 0.47As Proceedings of Spie - the International Society For Optical Engineering. 5260: 442-445. |
0.465 |
|
| 2003 |
Ru G, Yu X, Chen Z, Choa FS. Study of strain effect in MOCVD selective area growth Proceedings of Spie - the International Society For Optical Engineering. 5260: 450-453. |
0.47 |
|
| 2003 |
Yan J, Ru G, Gong Y, Choa FS. Study of P-Type Carbon Doping on In 0.53Ga 0.47As, In 0.52Al 0.2Ga 0.28As and In 0.52Al 0.48As Proceedings of Spie - the International Society For Optical Engineering. 5260: 446-449. |
0.437 |
|
| 2003 |
Ru G, Yu X, Sun Y, Chen Z, Choa FS. Wavelength shift and strain in quantum well structure by MOCVD selective area growth Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2: 702-703. |
0.508 |
|
| 2003 |
Ru G, Yu X, Sun Y, Chen Z, Choa FS. Study of wavelength shift in quantum well structure by MOCVD selective area growth Proceedings of Spie - the International Society For Optical Engineering. 5260: 454-456. |
0.498 |
|
| 2003 |
Ru G, Yan J, Chen Z, Choa FS, Worchesky T. In 1-xGa xAs yP 1-y nipi structure and its application to semiconductor optical amplifiers Proceedings of Spie - the International Society For Optical Engineering. 5260: 531-534. |
0.476 |
|
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