| Year |
Citation |
Score |
| 2022 |
Dai L, Zhao J, Li J, Chen B, Zhai S, Xue Z, Di Z, Feng B, Sun Y, Luo Y, Ma M, Zhang J, Ding S, Zhao L, Jiang Z, ... ... Xie YH, et al. Highly heterogeneous epitaxy of flexoelectric BaTiO membrane on Ge. Nature Communications. 13: 2990. PMID 35637222 DOI: 10.1038/s41467-022-30724-7 |
0.343 |
|
| 2020 |
Yu X, Hayden EY, Wang P, Xia M, Liang O, Bai Y, Teplow DB, Xie YH. Ultrasensitive amyloid β-protein quantification with high dynamic range using a hybrid graphene-gold surface-enhanced Raman spectroscopy platform. Journal of Raman Spectroscopy : Jrs. 51: 432-441. PMID 33688113 DOI: 10.1002/Jrs.5785 |
0.318 |
|
| 2020 |
Ye P, Xin W, De Rosa IM, Wang Y, Goorsky MS, Zheng L, Yin X, Xie YH. One-pot Self-templated Growth of Gold Nano-frames For Enhanced SERS Performance. Acs Applied Materials & Interfaces. PMID 32266808 DOI: 10.1021/Acsami.0C04777 |
0.347 |
|
| 2020 |
Wang Y, Niu G, Wang Q, Sourav R, Dai L, Wu H, Sun Y, Song S, Song Z, Xie YH, Ye ZG, Meng X, Ren W. Reliable resistive switching of epitaxial single crystalline cubic Y-HfO2 RRAMs with Si as bottom electrodes. Nanotechnology. PMID 32018237 DOI: 10.1088/1361-6528/Ab72B6 |
0.414 |
|
| 2020 |
Ng J, Jones T, Martinez-Velis I, Wang A, Hopkins J, Xie Y. Effects of polymer residue on the pull-in of suspended graphene Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 38: 23001. DOI: 10.1116/1.5126439 |
0.326 |
|
| 2020 |
Dai L, Niu G, Zhao J, Zhao H, Liu Y, Wang Y, Zhang Y, Wu H, Wang L, Pfützenreuter D, Schwarzkopf J, Dubourdieu C, Schroeder T, Ye Z, Xie Y, et al. Toward van der Waals epitaxy of transferable ferroelectric barium titanate films via a graphene monolayer Journal of Materials Chemistry C. 8: 3445-3451. DOI: 10.1039/C9Tc06454K |
0.355 |
|
| 2019 |
Liu W, Li L, Guo H, Qadir A, Bodepudi SC, Shehzad K, Chen W, Xie YH, Wang X, Yu B, Xu Y. Approaching the Collection Limit in Hot Electron Transistor with Ambipolar Hot Carrier Transport. Acs Nano. PMID 31755701 DOI: 10.1021/Acsnano.9B07020 |
0.336 |
|
| 2019 |
Tsai SH, Lei S, Zhu X, Tsai SP, Yin G, Che X, Deng P, Ng J, Zhang X, Lin WH, Jin Z, Qasem H, Vajtai R, Yeh NC, Ajayan PM, ... Xie YH, et al. Interfacial States and Fano-Feshbach Resonance in Graphene-Silicon Vertical Junction. Nano Letters. PMID 31545901 DOI: 10.1021/Acs.Nanolett.9B01658 |
0.354 |
|
| 2018 |
Liang O, Wang P, Xia M, Augello C, Yang F, Niu G, Liu H, Xie YH. Label-free distinction between p53+/+ and p53 -/- colon cancer cells using a graphene based SERS platform. Biosensors & Bioelectronics. 118: 108-114. PMID 30059864 DOI: 10.1016/J.Bios.2018.07.038 |
0.304 |
|
| 2018 |
Liu F, Song B, Su G, Liang O, Zhan P, Wang H, Wu W, Xie Y, Wang Z. Sculpting Extreme Electromagnetic Field Enhancement in Free Space for Molecule Sensing. Small (Weinheim An Der Bergstrasse, Germany). e1801146. PMID 30003669 DOI: 10.1002/Smll.201801146 |
0.323 |
|
| 2018 |
Biswas C, Candan I, Alaskar Y, Qasem H, Zhang W, Stieg AZ, Xie YH, Wang KL. Layer-by-layer hybrid chemical doping for high transmittance uniformity in graphene-polymer flexible transparent conductive nanocomposite. Scientific Reports. 8: 10259. PMID 29980765 DOI: 10.1038/S41598-018-28658-6 |
0.375 |
|
| 2018 |
Wei T, Zong H, Jiang S, Yang Y, Liao H, Xie Y, Wang W, Li J, Tang J, Hu X. High-quality GaN epitaxially grown on Si substrate with serpentine channels Superlattices and Microstructures. 118: 284-288. DOI: 10.1016/J.Spmi.2018.04.010 |
0.418 |
|
| 2018 |
Zhu L, Liu Z, Xia P, Li H, Xie Y. Synthesis of hierarchical ZnO&Graphene composites with enhanced photocatalytic activity Ceramics International. 44: 849-856. DOI: 10.1016/J.Ceramint.2017.10.009 |
0.336 |
|
| 2017 |
Wang K, Wang A, Ji Q, Hu X, Xie Y, Sun Y, Cheng Z. Epitaxy of GaN in high aspect ratio nanoscale holes over silicon substrate Applied Physics Letters. 111: 252101. DOI: 10.1063/1.5002529 |
0.342 |
|
| 2017 |
Ng J, Chen Q, Xie Y, Wang A, Wu T. Comparative study between the fracture stress of poly- and single-crystalline graphene using a novel nanoelectromechanical system structure Micro & Nano Letters. 12: 907-912. DOI: 10.1049/Mnl.2017.0422 |
0.329 |
|
| 2017 |
Chen Q, Ng J, Li C, Lu F, Wang C, Zhang F, Xie Y, Wang A. Systematic transient characterisation of graphene NEMS switch for ESD protection Micro & Nano Letters. 12: 875-880. DOI: 10.1049/Mnl.2017.0420 |
0.334 |
|
| 2017 |
Ng J, Xie Y. Source identification and method for drastic reduction of Fe contamination on wet transferred graphene Thin Solid Films. 639: 36-41. DOI: 10.1016/J.Tsf.2017.08.017 |
0.351 |
|
| 2017 |
Long Y, Xie J, Li H, Liu Z, Xie Y. Solvothermal synthesis, electromagnetic and electrochemical properties of jellylike cylinder graphene-Mn3O4 composite with highly coupled effect Journal of Solid State Chemistry. 256: 256-265. DOI: 10.1016/J.Jssc.2017.09.004 |
0.36 |
|
| 2017 |
Yan Z, Liu Z, Xia M, Efimov A, Xie Y. Broadband surface‐enhanced coherent anti‐Stokes Raman spectroscopy with high spectral resolution Journal of Raman Spectroscopy. 48: 935-942. DOI: 10.1002/Jrs.5165 |
0.318 |
|
| 2016 |
Niu G, Capellini G, Hatami F, Di Bartolomeo A, Niermann T, Hussein EH, Schubert MA, Krause HM, Zaumseil P, Skibitzki O, Lupina G, Masselink WT, Lehmann M, Xie YH, Schroeder T. Selective epitaxy of InP on Si and rectification in graphene/InP/Si hybrid structure. Acs Applied Materials & Interfaces. PMID 27642767 DOI: 10.1021/Acsami.6B09592 |
0.366 |
|
| 2016 |
Ji Q, Li L, Zhang W, Wang J, Liu P, Xie YH, Yan T, Yang W, Chen W, Hu X. Dislocation Reduction and Stress Relaxation of GaN and InGaN Multiple Quantum Wells with Improved Performance via Serpentine Channel Patterned Mask. Acs Applied Materials & Interfaces. PMID 27484167 DOI: 10.1021/Acsami.6B07044 |
0.332 |
|
| 2016 |
Niu G, Capellini G, Schubert MA, Niermann T, Zaumseil P, Katzer J, Krause HM, Skibitzki O, Lehmann M, Xie YH, von Känel H, Schroeder T. Dislocation-free Ge Nano-crystals via Pattern Independent Selective Ge Heteroepitaxy on Si Nano-Tip Wafers. Scientific Reports. 6: 22709. PMID 26940260 DOI: 10.1038/Srep22709 |
0.333 |
|
| 2016 |
Xia M, Qiao K, Cheng Z, Xie YH. Multiple layered metallic nanostructures for strong surface-enhanced Raman spectroscopy enhancement Applied Physics Express. 9. DOI: 10.7567/Apex.9.065001 |
0.336 |
|
| 2016 |
Chen Q, Ma R, Zhang W, Lu F, Wang C, Liang O, Zhang F, Li C, Tang H, Xie Y, Wang A. Systematic Characterization of Graphene ESD Interconnects for On-Chip ESD Protection Ieee Transactions On Electron Devices. 63: 3205-3212. DOI: 10.1109/Ted.2016.2582140 |
0.347 |
|
| 2016 |
Ma R, Chen Q, Zhang W, Lu F, Wang C, Wang A, Xie YH, Tang H. A Dual-Polarity Graphene NEMS Switch ESD Protection Structure Ieee Electron Device Letters. 37: 674-676. DOI: 10.1109/Led.2016.2544343 |
0.34 |
|
| 2016 |
Zhang W, Ma R, Chen Q, Xia M, Ng J, Wang A, Xie YH. The electro-mechanical responses of suspended graphene ribbons for electrostatic discharge applications Applied Physics Letters. 108. DOI: 10.1063/1.4946007 |
0.369 |
|
| 2015 |
Niu G, Giovanni C, Lupina G, Niermann T, Salvalaglio M, Marzegalli A, Schubert MA, Zaumseil P, Krause HM, Skibitzki O, Lehmann M, Montalenti F, Xie YH, Schroeder T. Photodetection in hybrid single layer graphene/fully coherent Ge island nanostructures selectively grown on Si nano-tip patterns. Acs Applied Materials & Interfaces. PMID 26709534 DOI: 10.1021/Acsami.5B10336 |
0.366 |
|
| 2015 |
Wang P, Xia M, Liang O, Sun K, Cipriano AF, Schroeder T, Huinan L, Xie YH. Label-free SERS Selective Detection of Dopamine and Serotonin Using Graphene-Au Nanopyramid Heterostructure. Analytical Chemistry. PMID 26382549 DOI: 10.1021/Acs.Analchem.5B01560 |
0.318 |
|
| 2015 |
Zoellner MH, Richard MI, Chahine GA, Zaumseil P, Reich C, Capellini G, Montalenti F, Marzegalli A, Xie YH, Schülli TU, Häberlen M, Storck P, Schroeder T. Imaging Structure and Composition Homogeneity of 300 mm SiGe Virtual Substrates for Advanced CMOS Applications by Scanning X-ray Diffraction Microscopy. Acs Applied Materials & Interfaces. 7: 9031-7. PMID 25871429 DOI: 10.1021/Am508968B |
0.339 |
|
| 2015 |
Zheng L, Cheng X, Yu Y, Xie Y, Li X, Wang Z. Controlled direct growth of Al2O3-doped HfO2 films on graphene by H2O-based atomic layer deposition. Physical Chemistry Chemical Physics : Pccp. 17: 3179-85. PMID 25519447 DOI: 10.1039/C4Cp04957H |
0.397 |
|
| 2015 |
Cao D, Cheng X, Xie Y, Zheng L, Wang Z, Yu X, Wang J, Shen D, Yu Y. Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures Rsc Advances. 5: 37881-37886. DOI: 10.1039/C5Ra04728E |
0.32 |
|
| 2014 |
Zhang W, Yu X, Cahyadi E, Xie YH, Ratsch C. On the kinetic barriers of graphene homo-epitaxy Applied Physics Letters. 105. DOI: 10.1063/1.4903485 |
0.334 |
|
| 2014 |
Cao D, Cheng X, Xie Y, Li X, Wang Z, Xia C, Zheng L, Xu D, Shen L, Yu Y. Properties of HfO2/La2O3 nanolaminate films grown on an AlGaN/GaN heterostructure by plasma enhanced atomic layer deposition Rsc Advances. 4: 36828-36833. DOI: 10.1039/C4Ra06542E |
0.344 |
|
| 2013 |
Wang P, Liang O, Zhang W, Schroeder T, Xie YH. Ultra-sensitive graphene-plasmonic hybrid platform for label-free detection. Advanced Materials (Deerfield Beach, Fla.). 25: 4918-24. PMID 23922275 DOI: 10.1002/Adma.201300635 |
0.351 |
|
| 2012 |
Wang P, Zhang W, Liang O, Pantoja M, Katzer J, Schroeder T, Xie YH. Giant optical response from graphene--plasmonic system. Acs Nano. 6: 6244-9. PMID 22712497 DOI: 10.1021/Nn301694M |
0.362 |
|
| 2012 |
Wang Y, Huang B, Zhang M, Miao C, Xie Y, Woo JCS. Fabrication of Self-Aligned Graphene FETs with Low Fringing Capacitance and Series Resistance International Scholarly Research Notices. 2012: 1-7. DOI: 10.5402/2012/891480 |
0.535 |
|
| 2012 |
Li L, Liu JPC, Liu L, Li D, Wang L, Wan C, Chen W, Yang Z, Xie Y, Hu X, Zhang G. Defect Reduction via Selective Lateral Epitaxy of GaN on an Innovative Masked Structure with Serpentine Channels Applied Physics Express. 5: 51001. DOI: 10.1143/Apex.5.051001 |
0.366 |
|
| 2012 |
Sun K, Zhang W, Li B, Lee JY, Xie YH, Schroeder T, Katzer J, Wei X, Russell TP. Field emission tip array fabrication utilizing geometrical hindrance in the oxidation of Si Ieee Transactions On Nanotechnology. 11: 999-1003. DOI: 10.1109/Tnano.2012.2208472 |
0.362 |
|
| 2012 |
Mehr W, Dabrowski J, Scheytt JC, Lippert G, Xie Y, Lemme MC, Ostling M, Lupina G. Vertical Graphene Base Transistor Ieee Electron Device Letters. 33: 691-693. DOI: 10.1109/Led.2012.2189193 |
0.367 |
|
| 2012 |
Zoellner MH, Zaumseil P, Wilkens H, Gevers S, Wollschläger J, Bäumer M, Xie Y, Niu G, Schroeder T. Stoichiometry–structure correlation of epitaxial Ce1−xPrxO2−δ (x=0−1) thin films on Si(111) Journal of Crystal Growth. 355: 159-165. DOI: 10.1016/J.Jcrysgro.2012.06.050 |
0.322 |
|
| 2011 |
Zhang X, Xu C, Chong K, Tu KN, Xie YH. Study of Ni Metallization in Macroporous Si Using Wet Chemistry for Radio Frequency Cross-Talk Isolation in Mixed Signal Integrated Circuits. Materials (Basel, Switzerland). 4: 952-962. PMID 28879960 DOI: 10.3390/Ma4060952 |
0.579 |
|
| 2011 |
Lu TM, Pan W, Tsui DC, Liu PC, Zhang Z, Xie YH. Termination of two-dimensional metallic conduction near the metal-insulator transition in a Si/SiGe quantum well. Physical Review Letters. 107: 126403. PMID 22026780 DOI: 10.1103/PhysRevLett.107.126403 |
0.479 |
|
| 2011 |
Lee JY, Sun K, Li B, Wei X, Russell T, Xie YH. A method to fabricate a template with a long range ordered dense array of true nanometer scale pits Ieee Transactions On Nanotechnology. 10: 256-259. DOI: 10.1109/Tnano.2009.2038376 |
0.393 |
|
| 2011 |
Lin X, Hu J, Lai AP, Zhang Z, MacLean K, Dillard C, Xie YH, Kastner MA. The effect of surface conductance on lateral gated quantum devices in Si/SiGe heterostructures Journal of Applied Physics. 110. DOI: 10.1063/1.3610524 |
0.329 |
|
| 2011 |
Liu W, Jackson BL, Zhu J, Miao C, Chung C, Park Y, Sun K, Woo J, Xie Y. Correction to Large Scale Pattern Graphene Electrode for High Performance in Transparent Organic Single Crystal Field-Effect Transistors Acs Nano. 5: 2412-2412. DOI: 10.1021/Nn200548F |
0.674 |
|
| 2010 |
Liu W, Jackson BL, Zhu J, Miao CQ, Chung CH, Chung CH, Park YJ, Sun K, Woo J, Xie YH. Large scale pattern graphene electrode for high performance in transparent organic single crystal field-effect transistors. Acs Nano. 4: 3927-32. PMID 20536162 DOI: 10.1021/Nn100728P |
0.705 |
|
| 2010 |
Liu W, Xiu F, Sun K, Xie YH, Wang KL, Wang Y, Zou J, Yang Z, Liu J. Na-doped p-type ZnO microwires. Journal of the American Chemical Society. 132: 2498-9. PMID 20141133 DOI: 10.1021/Ja908521S |
0.322 |
|
| 2010 |
Wang Y, Miao C, Huang B, Zhu J, Liu W, Park Y, Xie Y, Woo JCS. Scalable Synthesis of Graphene on Patterned Ni and Transfer Ieee Transactions On Electron Devices. 57: 3472-3476. DOI: 10.1109/Ted.2010.2076337 |
0.553 |
|
| 2010 |
Lee JY, Sun K, Li B, Xie YH, Wei X, Russell TP. Multiple-level threshold switching behavior of In2 Se 3 confined in a nanostructured silicon substrate Applied Physics Letters. 97. DOI: 10.1063/1.3486122 |
0.326 |
|
| 2010 |
Sun K, Lee JY, Li B, Liu W, Miao C, Xie YH, Wei X, Russell TP. Fabrication and field emission study of atomically sharp high-density tungsten nanotip arrays Journal of Applied Physics. 108. DOI: 10.1063/1.3437079 |
0.513 |
|
| 2010 |
Hu Q, Seo I, Zhang Z, Lee S, Kim H, Kim S, Kim Y, Lee HH, Xie Y, Kim K, Yoon T. Controlling dislocation positions in silicon germanium (SiGe) buffer layers by local oxidation Thin Solid Films. 518. DOI: 10.1016/J.Tsf.2009.10.092 |
0.345 |
|
| 2010 |
Liu W, Chung C, Miao C, Wang Y, Li B, Ruan L, Patel K, Park Y, Woo J, Xie Y. Chemical vapor deposition of large area few layer graphene on Si catalyzed with nickel films Thin Solid Films. 518: S128-S132. DOI: 10.1016/J.Tsf.2009.10.070 |
0.587 |
|
| 2009 |
Yoon T, Kim H, Kim K, Ryu DY, Russell TP, Zhao Z, Liu J, Xie Y. Study of growth behaviour and microstructure of epitaxially grown self-assembled Ge quantum dots on nanometer-scale patterned SiO2/Si(001) substrates Physica Status Solidi (B). 246: 721-724. DOI: 10.1002/Pssb.200880589 |
0.608 |
|
| 2008 |
Sahni S, Luo X, Liu J, Xie YH, Yablonovitch E. Junction field-effect-transistor-based germanium photodetector on silicon-on-insulator. Optics Letters. 33: 1138-40. PMID 18483538 DOI: 10.1364/Ol.33.001138 |
0.392 |
|
| 2008 |
Sun K, Feng W, Lee JY, Li B, Xie Y. 3-D Finite Element Simulation of a Phase-change Random Access Memory Cell with a Self-insulated Structure Mrs Proceedings. 1108. DOI: 10.1557/Proc-1108-A11-04 |
0.322 |
|
| 2008 |
Kim J, Lee JY, Xie Y. Fabrication of dislocation-free Si films under uniaxial tension on porous Si compliant substrates Thin Solid Films. 516: 7599-7603. DOI: 10.1016/J.Tsf.2008.03.044 |
0.597 |
|
| 2007 |
Xu C, Zhang X, Tu K, Xie Y. Nickel Displacement Deposition of Porous Silicon with Ultrahigh Aspect Ratio Journal of the Electrochemical Society. 154. DOI: 10.1149/1.2430690 |
0.367 |
|
| 2007 |
Kim J, Li B, Xie Y. A method for fabricating dislocation-free tensile-strained SiGe films via the oxidation of porous Si substrates Applied Physics Letters. 91: 252108. DOI: 10.1063/1.2827194 |
0.598 |
|
| 2007 |
Yoon T, Kim H, Kim K, Ryu DY, Russell TP, Zhao Z, Liu J, Xie Y. Microstructure analysis of epitaxially grown self-assembled Ge islands on nanometer-scale patterned SiO2∕Si substrates by high-resolution transmission electron microscopy Journal of Applied Physics. 102: 104306. DOI: 10.1063/1.2812610 |
0.622 |
|
| 2006 |
Kim J, Xie Y. Fabrication of dislocation-free tensile strained Si thin films using controllably oxidized porous Si substrates Applied Physics Letters. 89: 152117. DOI: 10.1063/1.2360930 |
0.596 |
|
| 2006 |
Zhao ZM, Yoon TS, Feng W, Li BY, Kim JH, Liu J, Hulko O, Xie YH, Kim HM, Kim KB, Kim HJ, Wang KL, Ratsch C, Caflisch R, Ryu DY, et al. The challenges in guided self-assembly of Ge and InAs quantum dots on Si Thin Solid Films. 508: 195-199. DOI: 10.1016/J.Tsf.2005.08.407 |
0.486 |
|
| 2006 |
Zhang X, Tu K, Xie Y, Tung C, Xu S. Single‐Step Fabrication of Nickel Films with Arrayed Macropores and Nanostructured Skeletons Advanced Materials. 18: 1905-1909. DOI: 10.1002/Adma.200502155 |
0.38 |
|
| 2005 |
Chong K, Zhang X, Tu K, Huang D, Chang M, Xie Y. Three-Dimensional Substrate Impedance Engineering Based on<tex>$hbox p ^-$</tex>/<tex>$hbox p ^+$</tex>Si Substrate for Mixed-Signal System-on-Chip (SoC) Ieee Transactions On Electron Devices. 52: 2440-2446. DOI: 10.1109/Ted.2005.857190 |
0.614 |
|
| 2005 |
Chong K, Xie YH. Low capacitance and high isolation bond pad for high-frequency RFICs Ieee Electron Device Letters. 26: 746-748. DOI: 10.1109/Led.2005.854399 |
0.551 |
|
| 2005 |
Chong K, Xie YH. High-performance on-chip transformers Ieee Electron Device Letters. 26: 557-559. DOI: 10.1109/Led.2005.851817 |
0.572 |
|
| 2005 |
Chong K, Xie Y, Yu K, Huang D, Chang M-F. High-performance inductors integrated on porous silicon Ieee Electron Device Letters. 26: 93-95. DOI: 10.1109/Led.2004.840546 |
0.558 |
|
| 2005 |
Yoon TS, Liu J, Noori AM, Goorsky MS, Xie YH. Surface roughness and dislocation distribution in compositionally graded relaxed SiGe buffer layer with inserted-strained Si layers Applied Physics Letters. 87. DOI: 10.1063/1.1988986 |
0.354 |
|
| 2003 |
Bandaru P, Sahni S, Yablonovitch E, Kim HJ, Xie YH. The fabrication of p-Ge/n-Si photodetectors, compatible with back-end Si CMOS processing, by low temperature (< 400°C) molecular beam epitaxy and electron-beam evaporation Materials Research Society Symposium - Proceedings. 796: 51-56. DOI: 10.1557/Proc-796-V2.8 |
0.388 |
|
| 2003 |
Kim HS, Chong K, Xie YH, Jenkins KA. The Importance of Distributed Grounding in Combination with Porous Si Trenches for the Reduction of RF Crosstalk Through p- Si Substrate Ieee Electron Device Letters. 24: 640-642. DOI: 10.1109/Led.2003.818071 |
0.611 |
|
| 2003 |
Kim H, Chong K, Xie Y. Study of the cross-sectional profile in selective formation of porous silicon Applied Physics Letters. 83: 2710-2712. DOI: 10.1063/1.1613995 |
0.613 |
|
| 2003 |
Kim HS, Xie YH, DeVincentis M, Itoh T, Jenkins KA. Unoxidized porous Si as an isolation material for mixed-signal integrated circuit applications Journal of Applied Physics. 93: 4226-4231. DOI: 10.1063/1.1555700 |
0.401 |
|
| 2003 |
Kim H, Chong K, Xie Y. The promising role of porous Si in mixed-signal integrated circuit technology Physica Status Solidi (a). 197: 269-274. DOI: 10.1002/Pssa.200306514 |
0.591 |
|
| 2002 |
Kim HS, Jenkins KA, Xie YH. Effective crosstalk isolation through p+ Si substrates with semi-insulating porous Si Ieee Electron Device Letters. 23: 160-162. DOI: 10.1109/55.988824 |
0.415 |
|
| 2002 |
Kim H, Zouzounis EC, Xie Y. Effective method for stress reduction in thick porous silicon films Applied Physics Letters. 80: 2287-2289. DOI: 10.1063/1.1465130 |
0.314 |
|
| 2001 |
Kim H, Zheng D, Becker AJ, Xie Y. Spiral inductors on Si p/p/sup +/ substrates with resonant frequency of 20 GHz Ieee Electron Device Letters. 22: 275-277. DOI: 10.1109/55.924840 |
0.38 |
|
| 2000 |
Madhavi S, Venkataraman, Sturm J, Xie Y. Low- and high-field transport properties of modulation-doped Si/SiGe and Ge/SiGe heterostructures: Effect of phonon confinement in germanium quantum wells Physical Review B. 61: 16807-16818. DOI: 10.1103/Physrevb.61.16807 |
0.335 |
|
| 1998 |
Xie YH, Frei MR, Becker AJ, King CA, Kossives D, Gomez LT, Theiss SK. An approach for fabricating high-performance inductors on low-resistivity substrates Ieee Journal of Solid-State Circuits. 33: 1433-1437. DOI: 10.1109/4.711344 |
0.393 |
|
| 1995 |
Xie Y, Hybertsen MS, Wilson WL. Implication of Silicon Nanocrystallites from Combined Absorption and Luminescence Studies of Free-Standing Porous Silicon Films Japanese Journal of Applied Physics. 34: 257. DOI: 10.7567/Jjaps.34S1.257 |
0.311 |
|
| 1995 |
Xie Y, Silverman PJ. The role of strain in silicon-based molecular beam epitaxy Journal of Crystal Growth. 157: 113-115. DOI: 10.1016/0022-0248(95)00378-9 |
0.374 |
|
| 1994 |
Xie YH, Fitzgerald EA, Monroe D, Watson GP, Silverman PJ. From Relaxed GeSi Buffers to Field Effect Transistors: Current Status and Future Prospects Japanese Journal of Applied Physics. 33: 2372. DOI: 10.1143/Jjap.33.2372 |
0.362 |
|
| 1994 |
Watson GP, Fitzgerald EA, Xie YH, Monroe D. Relaxed, low threading defect density Si0.7Ge0.3 epitaxial layers grown on Si by rapid thermal chemical vapor deposition Journal of Applied Physics. 75: 263-269. DOI: 10.1063/1.355894 |
0.396 |
|
| 1993 |
Watson GP, Monroe D, Cheng J, Fitzgerald EA, Xie Y, Vandover RB. The Fabrication of Self-Aligned Ohmic Cobalt Contacts to Relaxed, N-Type Si 0.7 Ge 0.3 Mrs Proceedings. 320: 323. DOI: 10.1557/Proc-320-323 |
0.347 |
|
| 1993 |
Watson GP, Fitzgerald EA, Jalali B, Xie Y, Weir B, Feldman LC. Correlation Between Defect Density and Process Variables In Step-Graded, Relaxed Si0.7Ge0.3 Grown on Si by Rtcvd Mrs Proceedings. 303. DOI: 10.1557/Proc-303-15 |
0.381 |
|
| 1993 |
Hsu JWP, Fitzgerald EA, Xie Y, Silverman PJ, Cardillo MJ. Process and defect-induced surface morphology of relaxed GexSi1-x films Proceedings of Spie. 1855: 118-128. DOI: 10.1117/12.146368 |
0.362 |
|
| 1993 |
Watson GP, Fitzgerald EA, Xie YH, Silverman PJ, White AE, Short KT. Controlled misfit dislocation nucleation in Si0.90Ge 0.10 epitaxial layers grown on Si Applied Physics Letters. 63: 746-748. DOI: 10.1063/1.109923 |
0.377 |
|
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