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Lloyd W. Massengill - Publications

Affiliations: 
Electrical Engineering Vanderbilt University, Nashville, TN 
Area:
Electronics and Electrical Engineering, Computer Engineering, Aerospace Engineering
Website:
https://engineering.vanderbilt.edu/bio/lloyd-massengill
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203 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Richards EW, Loveless TD, Kauppila JS, Haeffner TD, Holman WT, Massengill LW. Radiation Hardened by Design Subsampling Phase-Locked Loop Techniques in PD-SOI Ieee Transactions On Nuclear Science. 67: 1144-1151. DOI: 10.1109/Tns.2020.2978167  0.36
2020 Loveless TD, Patel B, Reising DR, Roca R, Allen M, Massengill LW, McMorrow D. Ionizing Radiation Effects Spectroscopy for Analysis of Single-Event Transients Ieee Transactions On Nuclear Science. 67: 99-107. DOI: 10.1109/Tns.2019.2950385  0.427
2019 Harrington RC, Kauppila JS, Maharrey JA, Haeffner TD, Sternberg AL, Zhang EX, Ball DR, Nsengiyumva P, Bhuva BL, Massengill LW. Empirical Modeling of FinFET SEU Cross Sections Across Supply Voltage Ieee Transactions On Nuclear Science. 66: 1427-1432. DOI: 10.1109/Tns.2019.2920621  0.663
2019 Harrington RC, Kauppila JS, Maharrey JA, Haeffner TD, Zhang EX, Ball DR, Nsengiyumva P, Alles ML, Bhuva BL, Massengill LW. Exploiting SEU Data Analysis to Extract Fast SET Pulses Ieee Transactions On Nuclear Science. 66: 932-937. DOI: 10.1109/Tns.2019.2913498  0.457
2019 Kauppila JS, Ball DR, Maharrey JA, Harrington RC, Haeffner TD, Sternberg AL, Alles ML, Massengill LW. A Bias-Dependent Single-Event-Enabled Compact Model for Bulk FinFET Technologies Ieee Transactions On Nuclear Science. 66: 635-642. DOI: 10.1109/Tns.2019.2897329  0.719
2019 Patel B, Joplin M, Boggs RC, Reising DR, McCurdy MW, Massengill LW, Loveless TD. Ionizing Radiation Effects Spectroscopy for Analysis of Total-Ionizing Dose Degradation in RF Circuits Ieee Transactions On Nuclear Science. 66: 61-68. DOI: 10.1109/Tns.2018.2884642  0.4
2018 Harrington RC, Maharrey JA, Kauppila JS, Nsengiyumva P, Ball DR, Haeffner TD, Zhang EX, Bhuva BL, Massengill LW. Effect of Transistor Variants on Single-Event Transients at the 14-/16-nm Bulk FinFET Technology Generation Ieee Transactions On Nuclear Science. 65: 1807-1813. DOI: 10.1109/Tns.2018.2843260  0.467
2018 Jiang H, Zhang H, Chatterjee I, Kauppila JS, Bhuva BL, Massengill LW. Power-Aware SE Analysis of Different FF Designs at the 14-/16-nm Bulk FinFET CMOS Technology Node Ieee Transactions On Nuclear Science. 65: 1866-1871. DOI: 10.1109/Tns.2018.2831002  0.444
2018 Trippe JM, Reed RA, Austin RA, Sierawski BD, Massengill LW, Weller RA, Warren KM, Schrimpf RD, Narasimham B, Bartz B, Reed D. Predicting Muon-Induced SEU Rates for a 28-nm SRAM Using Protons and Heavy Ions to Calibrate the Sensitive Volume Model Ieee Transactions On Nuclear Science. 65: 712-718. DOI: 10.1109/Tns.2017.2786585  0.391
2018 Ball DR, Alles ML, Kauppila JS, Harrington RC, Maharrey JA, Nsengiyumva P, Haeffner TD, Rowe JD, Sternberg AL, Zhang EX, Bhuva BL, Massengill LW. The Impact of Charge Collection Volume and Parasitic Capacitance on SEUs in SOI- and Bulk-FinFET D Flip-Flops Ieee Transactions On Nuclear Science. 65: 326-330. DOI: 10.1109/Tns.2017.2784763  0.684
2018 Kauppila JS, Maharrey JA, Harrington RC, Haeffner TD, Nsengiyumva P, Ball DR, Sternberg AL, Zhang EX, Bhuva BL, Massengill LW. Exploiting Parallelism and Heterogeneity in a Radiation Effects Test Vehicle for Efficient Single-Event Characterization of Nanoscale Circuits Ieee Transactions On Nuclear Science. 65: 486-494. DOI: 10.1109/Tns.2017.2783260  0.672
2018 Maharrey JA, Kauppila JS, Harrington RC, Nsengiyumva P, Ball DR, Haeffner TD, Zhang EX, Bhuva BL, Holman WT, Massengill LW. Dual-Interlocked Logic for Single-Event Transient Mitigation Ieee Transactions On Nuclear Science. 65: 1872-1878. DOI: 10.1109/Tns.2017.2783239  0.459
2018 Zhang H, Jiang H, Fan X, Kauppila JS, Chatterjee I, Bhuva BL, Massengill LW. Effects of Total-Ionizing-Dose Irradiation on Single-Event Response for Flip-Flop Designs at a 14-/16-nm Bulk FinFET Technology Node Ieee Transactions On Nuclear Science. 65: 1928-1934. DOI: 10.1109/Tns.2017.2781622  0.433
2018 Jiang H, Zhang H, Kauppila JS, Massengill LW, Bhuva BL. An Empirical Model for Predicting SE Cross Section for Combinational Logic Circuits in Advanced Technologies Ieee Transactions On Nuclear Science. 65: 304-310. DOI: 10.1109/Tns.2017.2779885  0.404
2018 Maharrey JA, Kauppila JS, Harrington RC, Nsengiyumva P, Ball DR, Haeffner TD, Zhang EX, Bhuva BL, Holman WT, Massengill LW. Impact of Single-Event Transient Duration and Electrical Delay at Reduced Supply Voltages on SET Mitigation Techniques Ieee Transactions On Nuclear Science. 65: 362-368. DOI: 10.1109/Tns.2017.2779818  0.443
2018 Zhang H, Jiang H, Bhuva BL, Kauppila JS, Holman WT, Massengill LW. Frequency Dependence of Heavy-Ion-Induced Single-Event Responses of Flip-Flops in a 16-nm Bulk FinFET Technology Ieee Transactions On Nuclear Science. 65: 413-417. DOI: 10.1109/Tns.2017.2779785  0.476
2018 Nsengiyumva P, Massengill LW, Kauppila JS, Maharrey JA, Harrington RC, Haeffner TD, Ball DR, Alles ML, Bhuva BL, Holman WT, Zhang EX, Rowe JD, Sternberg AL. Angular Effects on Single-Event Mechanisms in Bulk FinFET Technologies Ieee Transactions On Nuclear Science. 65: 223-230. DOI: 10.1109/Tns.2017.2775234  0.678
2018 Chen YP, Massengill LW, Sternberg AL, Zhang EX, Kauppila JS, Yao M, Amort AL, Bhuva BL, Holman WT, Loveless TD. Time-Domain Modeling of All-Digital PLLs to Single-Event Upset Perturbations Ieee Transactions On Nuclear Science. 65: 311-317. DOI: 10.1109/Tns.2017.2772262  0.646
2017 Harrington RC, Kauppila JS, Warren KM, Chen YP, Maharrey JA, Haeffner TD, Loveless TD, Bhuva BL, Bounasser M, Lilja K, Massengill LW. Estimating Single-Event Logic Cross Sections in Advanced Technologies Ieee Transactions On Nuclear Science. 64: 2115-2121. DOI: 10.1109/Tns.2017.2718517  0.413
2017 Chen YP, Massengill LW, Kauppila JS, Bhuva BL, Holman WT, Loveless TD. Single-Event Upset Characterization of Common First- and Second-Order All-Digital Phase-Locked Loops Ieee Transactions On Nuclear Science. 64: 2144-2151. DOI: 10.1109/Tns.2017.2687403  0.311
2017 Zhang H, Jiang H, Assis TR, Ball DR, Narasimham B, Anvar A, Massengill LW, Bhuva BL. Angular Effects of Heavy-Ion Strikes on Single-Event Upset Response of Flip-Flop Designs in 16-nm Bulk FinFET Technology Ieee Transactions On Nuclear Science. 64: 491-496. DOI: 10.1109/Tns.2016.2637876  0.455
2017 Zhang H, Jiang H, Assis TR, Mahatme NN, Narasimham B, Massengill LW, Bhuva BL, Wen S, Wong R. Effects of Threshold Voltage Variations on Single-Event Upset Response of Sequential Circuits at Advanced Technology Nodes Ieee Transactions On Nuclear Science. 64: 457-463. DOI: 10.1109/Tns.2016.2637873  0.441
2017 Loveless TD, Jagannathan S, Zhang EX, Fleetwood DM, Kauppila JS, Haeffner TD, Massengill LW. Combined Effects of Total Ionizing Dose and Temperature on a K-Band Quadrature LC-Tank VCO in a 32 nm CMOS SOI Technology Ieee Transactions On Nuclear Science. 64: 204-211. DOI: 10.1109/Tns.2016.2637699  0.33
2017 Jiang H, Zhang H, Assis TR, Narasimham B, Bhuva BL, Holman WT, Massengill LW. Single-Event Performance of Sense-Amplifier Based Flip-Flop Design in a 16-nm Bulk FinFET CMOS Process Ieee Transactions On Nuclear Science. 64: 477-482. DOI: 10.1109/Tns.2016.2636865  0.466
2017 King MP, Wu X, Eller M, Samavedam S, Shaneyfelt MR, Silva AI, Draper BL, Rice WC, Meisenheimer TL, Felix JA, Zhang EX, Haeffner TD, Ball DR, Shetler KJ, Alles ML, ... ... Massengill LW, et al. Analysis of TID Process, Geometry, and Bias Condition Dependence in 14-nm FinFETs and Implications for RF and SRAM Performance Ieee Transactions On Nuclear Science. 64: 285-292. DOI: 10.1109/Tns.2016.2634538  0.38
2017 Sierawski BD, Warren KM, Sternberg AL, Austin RA, Trippe JM, McCurdy MW, Reed RA, Weller RA, Alles ML, Schrimpf RD, Massengill LW, Fleetwood DM, Monteiro A, Buxton GW, Brandenburg JC, et al. CubeSats and Crowd-Sourced Monitoring for Single Event Effects Hardness Assurance Ieee Transactions On Nuclear Science. 64: 293-300. DOI: 10.1109/Tns.2016.2632440  0.618
2017 Shetler KJ, Holman WT, Kauppila JS, Witulski AF, Bhuva BL, Zhang EX, Massengill LW. Total Dose Measurement Circuit Design Based on a Voltage Reference Topology Ieee Transactions On Nuclear Science. 64: 559-566. DOI: 10.1109/Tns.2016.2630702  0.442
2017 Wang H-, Kauppila JS, Lilja K, Bounasser M, Chen L, Newton M, Li Y-, Liu R, Bhuva BL, Wen S-, Wong R, Fung R, Baeg S, Massengill LW. Evaluation of SEU Performance of 28-nm FDSOI Flip-Flop Designs Ieee Transactions On Nuclear Science. 64: 367-373. DOI: 10.1109/Tns.2016.2630022  0.397
2017 Chen YP, Loveless TD, Sternberg AL, Zhang EX, Kauppila JS, Bhuva BL, Holman WT, Alles ML, Reed RA, McMorrow D, Schrimpf RD, Massengill LW. Persistent Laser-Induced Leakage in a 20 nm Charge-Pump Phase-Locked Loop (PLL) Ieee Transactions On Nuclear Science. 64: 512-518. DOI: 10.1109/Tns.2016.2627940  0.658
2017 Nsengiyumva P, Massengill LW, Alles ML, Bhuva BL, Ball DR, Kauppila JS, Haeffner TD, Holman WT, Reed RA. Analysis of Bulk FinFET Structural Effects on Single-Event Cross Sections Ieee Transactions On Nuclear Science. 64: 441-448. DOI: 10.1109/Tns.2016.2620940  0.45
2016 Nsengiyumva P, Ball DR, Kauppila JS, Tam N, McCurdy M, Holman WT, Alles ML, Bhuva BL, Massengill LW. A Comparison of the SEU Response of Planar and FinFET D Flip-Flops at Advanced Technology Nodes Ieee Transactions On Nuclear Science. DOI: 10.1109/Tns.2015.2508981  0.47
2015 Mahatme NN, Rui L, Wang H, Chen L, Bhuva BL, Robinson WH, Massengill LW, Lilja K, Bounasser M, Wen SJ, Wong R. Influence of Voltage and Particle LET on Timing Vulnerability Factors of Circuits Ieee Transactions On Nuclear Science. 62: 2592-2598. DOI: 10.1109/Tns.2015.2498152  0.37
2015 Chen YP, Massengill LW, Bhuva BL, Holman WT, Loveless TD, Robinson WH, Gaspard NJ, Witulski AF. Single-Event Characterization of Bang-bang All-digital Phase-locked Loops (ADPLLs) Ieee Transactions On Nuclear Science. 62: 2650-2656. DOI: 10.1109/Tns.2015.2496799  0.388
2015 Agustin J, Lopez-Vallejo ML, Soriano CG, Cholbi P, Massengill LW, Chen YP. Efficient Mitigation of SET Induced Harmonic Errors in Ring Oscillators Ieee Transactions On Nuclear Science. 62: 3049-3056. DOI: 10.1109/Tns.2015.2496169  0.357
2015 Kauppila JS, Kay WH, Haeffner TD, Rauch DL, Assis TR, Mahatme NN, Gaspard NJ, Bhuva BL, Alles ML, Holman WT, Massengill LW. Single-Event Upset Characterization Across Temperature and Supply Voltage for a 20-nm Bulk Planar CMOS Technology Ieee Transactions On Nuclear Science. 62: 2613-2619. DOI: 10.1109/Tns.2015.2493886  0.418
2015 Assis TR, Ni K, Kauppila JS, Bhuva BL, Schrimpf RD, Massengill LW, Wen S, Wong R, Slayman C. Estimation of Single-Event-Induced Collected Charge for Multiple Transistors Using Analytical Expressions Ieee Transactions On Nuclear Science. 62: 2853-2859. DOI: 10.1109/Tns.2015.2492418  0.434
2015 Bhuva BL, Tam N, Massengill LW, Ball D, Chatterjee I, McCurdy M, Alles ML. Multi-Cell Soft Errors at Advanced Technology Nodes Ieee Transactions On Nuclear Science. 62: 2585-2591. DOI: 10.1109/Tns.2015.2488630  0.394
2015 Dodds NA, Martinez MJ, Dodd PE, Shaneyfelt MR, Sexton FW, Black JD, Lee DS, Swanson SE, Bhuva BL, Warren KM, Reed RA, Trippe J, Sierawski BD, Weller RA, Mahatme N, ... ... Massengill LW, et al. The Contribution of Low-Energy Protons to the Total On-Orbit SEU Rate Ieee Transactions On Nuclear Science. DOI: 10.1109/Tns.2015.2486763  0.39
2015 Kauppila JS, Massengill LW, Ball DR, Alles ML, Schrimpf RD, Loveless TD, Maharrey JA, Quinn RC, Rowe JD. Geometry-Aware Single-Event Enabled Compact Models for Sub-50 nm Partially Depleted Silicon-on-Insulator Technologies Ieee Transactions On Nuclear Science. DOI: 10.1109/Tns.2015.2443116  0.412
2014 Mahatme NN, Gaspard NJ, Assis T, Chatterjee I, Loveless TD, Bhuva BL, Robinson WH, Massengill LW, Wen SJ, Wong R. Kernel-based circuit partition approach to mitigate combinational logic soft errors Ieee Transactions On Nuclear Science. 61: 3274-3281. DOI: 10.1109/Tns.2014.2370057  0.417
2014 Alles ML, Schrimpf RD, Massengill LW, Ball DR, Kelly AT, Haddad NF, Rodgers JC, Ross JF, Chan E, Raman A, Turowski M. State and angular dependence of single-event upsets in an asymmetric RC-hardened SRAM using deep trench capacitors Ieee Transactions On Nuclear Science. 61: 3068-3073. DOI: 10.1109/Tns.2014.2368931  0.347
2014 Chen YP, Loveless TD, Maillard P, Gaspard NJ, Jagannathan S, Sternberg AL, Zhang EX, Witulski AF, Bhuva BL, Holman TW, Massengill LW. Single-event transient induced harmonic errors in digitally controlled ring oscillators Ieee Transactions On Nuclear Science. 61: 3163-3170. DOI: 10.1109/Tns.2014.2364813  0.744
2014 Haeffner TD, Loveless TD, Zhang EX, Sternberg AL, Jagannathan S, Schrimpf RD, Kauppila JS, Alles ML, Fleetwood DM, Massengill LW, Haddad NF. Irradiation and temperature effects for a 32 nm RF silicon-on-insulator CMOS process Ieee Transactions On Nuclear Science. 61: 3037-3042. DOI: 10.1109/Tns.2014.2360455  0.626
2013 Gaspard NJ, Jagannathan S, Diggins ZJ, King MP, Wen SJ, Wong R, Loveless TD, Lilja K, Bounasser M, Reece T, Witulski AF, Holman WT, Bhuva BL, Massengill LW. Technology scaling comparison of flip-flop heavy-ion single-event upset cross sections Ieee Transactions On Nuclear Science. 60: 4368-4373. DOI: 10.1109/Tns.2013.2289745  0.391
2013 Mahatme NN, Gaspard NJ, Jagannathan S, Loveless TD, Bhuva BL, Robinson WH, Massengill LW, Wen SJ, Wong R. Impact of supply voltage and frequency on the soft error rate of logic circuits Ieee Transactions On Nuclear Science. 60: 4200-4206. DOI: 10.1109/Tns.2013.2288782  0.36
2013 Maharrey JA, Quinn RC, Loveless TD, Kauppila JS, Jagannathan S, Atkinson NM, Gaspard NJ, Zhang EX, Alles ML, Bhuva BL, Holman WT, Massengill LW. Effect of device variants in 32 nm and 45 nm SOI on SET pulse distributions Ieee Transactions On Nuclear Science. 60: 4399-4404. DOI: 10.1109/Tns.2013.2288572  0.434
2013 Maillard P, Holman WT, Loveless TD, Massengill LW. A new error correction circuit for delay locked loops Ieee Transactions On Nuclear Science. 60: 4387-4393. DOI: 10.1109/Tns.2013.2288103  0.667
2013 Diggins ZJ, Gaspard NJ, Mahatme NN, Jagannathan S, Loveless TD, Reece TR, Bhuva BL, Witulski AF, Massengill LW, Wen SJ, Wong R. Scalability of capacitive hardening for flip-flops in advanced technology nodes Ieee Transactions On Nuclear Science. 60: 4394-4398. DOI: 10.1109/Tns.2013.2286272  0.37
2013 Jagannathan S, Loveless TD, Zhang EX, Fleetwood DM, Schrimpf RD, Haeffner TD, Kauppila JS, Mahatme N, Bhuva BL, Alles ML, Holman WT, Witulski AF, Massengill LW. Sensitivity of high-frequency RF circuits to total ionizing dose degradation Ieee Transactions On Nuclear Science. 60: 4498-4504. DOI: 10.1109/Tns.2013.2283457  0.417
2013 Atkinson NM, Holman WT, Kauppila JS, Loveless TD, Hooten NC, Witulski AF, Bhuva BL, Massengill LW, Zhang EX, Warner JH. The quad-path hardening technique for switched-capacitor circuits Ieee Transactions On Nuclear Science. 60: 4356-4361. DOI: 10.1109/Tns.2013.2282312  0.388
2013 Mahatme NN, Gaspard NJ, Jagannathan S, Loveless TD, Chatterjee I, Bhuva BL, Massengill LW, Schrimpf RD. Experimental estimation of the window of vulnerability for logic circuits Ieee Transactions On Nuclear Science. 60: 2691-2696. DOI: 10.1109/Tns.2013.2273740  0.444
2013 Ferlet-Cavrois V, Massengill LW, Gouker P. Single Event Transients in Digital CMOS—A Review Ieee Transactions On Nuclear Science. 60: 1767-1790. DOI: 10.1109/Tns.2013.2255624  0.365
2012 Kauppila AV, Bhuva BL, Loveless TD, Jagannathan S, Gaspard NJ, Kauppila JS, Massengill LW, Wen SJ, Wong R, Vaughn GL, Timothy Holman W. Effect of negative bias temperature instability on the single event upset response of 40 nm flip-flops Ieee Transactions On Nuclear Science. 59: 2651-2657. DOI: 10.1109/Tns.2012.2224136  0.41
2012 Jagannathan S, Loveless TD, Bhuva BL, Gaspard NJ, Mahatme N, Assis T, Wen SJ, Wong R, Massengill LW. Frequency dependence of alpha-particle induced soft error rates of flip-flops in 40-nm CMOS technology Ieee Transactions On Nuclear Science. 59: 2796-2802. DOI: 10.1109/Tns.2012.2223827  0.352
2012 Blaine RW, Atkinson NM, Kauppila JS, Armstrong SE, Hooten NC, Loveless TD, Warner JH, Holman WT, Massengill LW. Differential charge cancellation (DCC) layout as an rhbd technique for bulk CMOS differential circuit design Ieee Transactions On Nuclear Science. 59: 2867-2871. DOI: 10.1109/Tns.2012.2222441  0.667
2012 Loveless TD, Kauppila JS, Jagannathan S, Ball DR, Rowe JD, Gaspard NJ, Atkinson NM, Blaine RW, Reece TR, Ahlbin JR, Haeffner TD, Alles ML, Holman WT, Bhuva BL, Massengill LW. On-chip measurement of single-event transients in a 45 nm silicon-on-insulator technology Ieee Transactions On Nuclear Science. 59: 2748-2755. DOI: 10.1109/Tns.2012.2218257  0.777
2012 Kauppila AV, Ball DR, Bhuva BL, Massengill LW, Tim Holman W. Impact of process variations on upset reversal in a 65 nm flip-flop Ieee Transactions On Nuclear Science. 59: 886-892. DOI: 10.1109/Tns.2012.2196448  0.305
2012 Armstrong SE, Blaine RW, Holman WT, Massengill LW. Single-event analysis and hardening of mixed-signal circuit interfaces in high-speed communications devices Ieee Transactions On Nuclear Science. 59: 1027-1033. DOI: 10.1109/Tns.2012.2194166  0.657
2011 Kauppila JS, Haeffner TD, Ball DR, Kauppila AV, Loveless TD, Jagannathan S, Sternberg AL, Bhuva BL, Massengill LW. Circuit-level layout-aware single-event sensitive-area analysis of 40-nm bulk CMOS flip-flops using compact modeling Ieee Transactions On Nuclear Science. 58: 2680-2686. DOI: 10.1109/Tns.2011.2172692  0.711
2011 Kauppila AV, Bhuva BL, Massengill LW, Holman WT, Ball DR. Impact of process variations and charge sharing on the single-event-upset response of flip-flops Ieee Transactions On Nuclear Science. 58: 2658-2663. DOI: 10.1109/Tns.2011.2172691  0.441
2011 Gouker PM, Tyrrell B, Renzi M, Chen C, Wyatt P, Ahlbin JR, Weeden-Wright S, Atkinson NM, Gaspard NJ, Bhuva BL, Massengill LW, Zhang E, Schrimpf R, Weller RA, King MP, et al. SET characterization in logic circuits fabricated in a 3DIC technology Ieee Transactions On Nuclear Science. 58: 2555-2562. DOI: 10.1109/Tns.2011.2172462  0.768
2011 Ahlbin JR, Atkinson NM, Gadlage MJ, Gaspard NJ, Bhuva BL, Loveless TD, Zhang EX, Chen L, Massengill LW. Influence of n-well contact area on the pulse width of single-event transients Ieee Transactions On Nuclear Science. 58: 2585-2590. DOI: 10.1109/Tns.2011.2172221  0.732
2011 Mahatme NN, Jagannathan S, Loveless TD, Massengill LW, Bhuva BL, Wen SJ, Wong R. Comparison of combinational and sequential error rates for a deep submicron process Ieee Transactions On Nuclear Science. 58: 2719-2725. DOI: 10.1109/Tns.2011.2171993  0.472
2011 Gaspard NJ, Witulski AF, Atkinson NM, Ahlbin JR, Holman WT, Bhuva BL, Loveless TD, Massengill LW. Impact of well structure on single-event well potential modulation in bulk CMOS Ieee Transactions On Nuclear Science. 58: 2614-2620. DOI: 10.1109/Tns.2011.2171366  0.762
2011 Blaine RW, Armstrong SE, Kauppila JS, Atkinson NM, Olson BD, Holman WT, Massengill LW. RHBD bias circuits utilizing sensitive node active charge cancellation Ieee Transactions On Nuclear Science. 58: 3060-3066. DOI: 10.1109/Tns.2011.2171365  0.694
2011 Jagannathan S, Loveless TD, Bhuva BL, Wen SJ, Wong R, Sachdev M, Rennie D, Massengill LW. Single-event tolerant flip-flop design in 40-nm bulk CMOS technology Ieee Transactions On Nuclear Science. 58: 3033-3037. DOI: 10.1109/Tns.2011.2170201  0.453
2011 Atkinson NM, Ahlbin JR, Witulski AF, Gaspard NJ, Holman WT, Bhuva BL, Zhang EX, Chen L, Massengill LW. Effect of transistor density and charge sharing on single-event transients in 90-nm bulk CMOS Ieee Transactions On Nuclear Science. 58: 2578-2584. DOI: 10.1109/Tns.2011.2168425  0.758
2011 Artola L, Hubert G, Warren KM, Gaillardin M, Schrimpf RD, Reed RA, Weller RA, Ahlbin JR, Paillet P, Raine M, Girard S, Duzellier S, Massengill LW, Bezerra F. SEU prediction from SET modeling using multi-node collection in bulk transistors and SRAMs down to the 65 nm technology node Ieee Transactions On Nuclear Science. 58: 1338-1346. DOI: 10.1109/Tns.2011.2144622  0.736
2011 Armstrong SE, Loveless TD, Hicks JR, Holman WT, McMorrow D, Massengill LW. Phase-dependent single-event sensitivity analysis of high-speed A/MS circuits extracted from asynchronous measurements Ieee Transactions On Nuclear Science. 58: 1066-1071. DOI: 10.1109/Tns.2011.2125989  0.659
2011 Loveless TD, Jagannathan S, Reece T, Chetia J, Bhuva BL, McCurdy MW, Massengill LW, Wen SJ, Wong R, Rennie D. Neutron- and proton-induced single event upsets for D- and DICE-flip/flop designs at a 40 nm technology node Ieee Transactions On Nuclear Science. 58: 1008-1014. DOI: 10.1109/Tns.2011.2123918  0.425
2011 Gadlage MJ, Ahlbin JR, Bhuva BL, Hooten NC, Dodds NA, Reed RA, Massengill LW, Schrimpf RD, Vizkelethy G. Alpha-particle and focused-ion-beam-induced single-event transient measurements in a bulk 65-nm CMOS technology Ieee Transactions On Nuclear Science. 58: 1093-1097. DOI: 10.1109/Tns.2011.2112378  0.727
2011 Kauppila AV, Bhuva BL, Kauppila JS, Massengill LW, Holman WT. Impact of process variations on SRAM single event upsets Ieee Transactions On Nuclear Science. 58: 834-839. DOI: 10.1109/Tns.2010.2098419  0.372
2011 Atkinson NM, Witulski AF, Holman WT, Ahlbin JR, Bhuva BL, Massengill LW. Layout technique for single-event transient mitigation via pulse quenching Ieee Transactions On Nuclear Science. 58: 885-890. DOI: 10.1109/Tns.2010.2097278  0.743
2011 Ahlbin JR, Gadlage MJ, Atkinson NM, Narasimham B, Bhuva BL, Witulski AF, Holman WT, Eaton PH, Massengill LW. Effect of multiple-transistor charge collection on single-event transient pulse widths Ieee Transactions On Device and Materials Reliability. 11: 401-406. DOI: 10.1109/Tdmr.2011.2157506  0.764
2011 Gadlage MJ, Ahlbin JR, Narasimham B, Bhuva BL, Massengill LW, Schrimpf RD. Single-event transient measurements in nMOS and pMOS transistors in a 65-nm bulk CMOS technology at elevated temperatures Ieee Transactions On Device and Materials Reliability. 11: 179-186. DOI: 10.1109/Tdmr.2010.2102354  0.759
2011 Rezzak N, Alles ML, Schrimpf RD, Kalemeris S, Massengill LW, Sochacki J, Barnaby HJ. The sensitivity of radiation-induced leakage to STI topology and sidewall doping Microelectronics Reliability. 51: 889-894. DOI: 10.1016/J.Microrel.2010.12.013  0.316
2010 Maillard P, Holman WT, Loveless TD, Bhuva BL, Massengill LW. An RHBD technique to mitigate missing pulses in delay locked loops Ieee Transactions On Nuclear Science. 57: 3634-3639. DOI: 10.1109/Tns.2010.2087357  0.652
2010 Ahlbin JR, Gadlage MJ, Ball DR, Witulski AW, Bhuva BL, Reed RA, Vizkelethy G, Massengill LW. The effect of layout topology on single-event transient pulse quenching in a 65 nm bulk CMOS process Ieee Transactions On Nuclear Science. 57: 3380-3385. DOI: 10.1109/Tns.2010.2085449  0.749
2010 Dodds NA, Hutson JM, Pellish JA, Reed RA, Kim HS, Berg MD, Friendlich MR, Phan AM, Seidleck CM, Xapsos MA, Deng X, Baumann RC, Schrimpf RD, King MP, Massengill LW, et al. Selection of well contact densities for latchup-immune minimal-area ics Ieee Transactions On Nuclear Science. 57: 3575-3581. DOI: 10.1109/Tns.2010.2082562  0.326
2010 Loveless TD, Alles ML, Ball DR, Warren KM, Massengill LW. Parametric Variability Affecting 45 nm SOI SRAM Single Event Upset Cross-Sections Ieee Transactions On Nuclear Science. 57: 3228-3233. DOI: 10.1109/Tns.2010.2081688  0.383
2010 Armstrong SE, Olson BD, Holman WT, Warner J, McMorrow D, Massengill LW. Demonstration of a differential layout solution for improved ASET tolerance in CMOS A/MS circuits Ieee Transactions On Nuclear Science. 57: 3615-3619. DOI: 10.1109/Tns.2010.2080320  0.672
2010 Jagannathan S, Gadlage MJ, Bhuva BL, Schrimpf RD, Narasimham B, Chetia J, Ahlbin JR, Massengill LW. Independent measurement of SET pulse widths from N-hits and P-hits in 65-nm CMOS Ieee Transactions On Nuclear Science. 57: 3386-3391. DOI: 10.1109/Tns.2010.2076836  0.756
2010 Gadlage MJ, Ahlbin JR, Narasimham B, Bhuva BL, Massengill LW, Reed RA, Schrimpf RD, Vizkelethy G. Scaling trends in SET pulse widths in sub-100 nm bulk CMOS processes Ieee Transactions On Nuclear Science. 57: 3336-3341. DOI: 10.1109/Tns.2010.2071881  0.757
2010 Loveless TD, Massengill LW, Holman WT, Bhuva BL, McMorrow D, Warner JH. A generalized linear model for single event transient propagation in phase-locked loops Ieee Transactions On Nuclear Science. 57: 2933-2947. DOI: 10.1109/Tns.2010.2066287  0.464
2010 Jagannathan S, Herbison DR, Holman WT, Massengill LW. Behavioral modeling technique for TID degradation of complex analog circuits Ieee Transactions On Nuclear Science. 57: 3708-3715. DOI: 10.1109/Tns.2010.2056699  0.34
2010 Weller RA, Mendenhall MH, Reed RA, Schrimpf RD, Warren KM, Sierawski BD, Massengill LW. Monte Carlo simulation of single event effects Ieee Transactions On Nuclear Science. 57: 1726-1746. DOI: 10.1109/Tns.2010.2044807  0.426
2010 Gadlage MJ, Ahlbin JR, Narasimham B, Ramachandran V, Dinkins CA, Pate ND, Bhuva BL, Schrimpf RD, Massengill LW, Shuler RL, McMorrow D. Increased single-event transient pulsewidths in a 90-nm bulk CMOS technology operating at elevated temperatures Ieee Transactions On Device and Materials Reliability. 10: 157-163. DOI: 10.1109/Tdmr.2009.2036719  0.755
2009 Narasimham B, Gadlage MJ, Bhuva BL, Schrimpf RD, Massengill LW, Holman WT, Witulski AF, Galloway KF. Test circuit for measuring pulse widths of single-event transients causing soft errors Ieee Transactions On Semiconductor Manufacturing. 22: 119-125. DOI: 10.1109/Tsm.2008.2010742  0.481
2009 Tuinenga PW, Massengill LW. Circuit Modeling of Single-Event Transient Pulse Stretching in Digital CMOS Ieee Transactions On Nuclear Science. 56: 3165-3171. DOI: 10.1109/Tns.2009.2034152  0.468
2009 Gadlage MJ, Ahlbin JR, Ramachandran V, Gouker P, Dinkins CA, Bhuva BL, Narasimham B, Schrimpf RD, McCurdy MW, Alles ML, Reed RA, Mendenhall MH, Massengill LW, Shuler RL, McMorrow D. Temperature dependence of digital single-event transients in bulk and fully-depleted SOI technologies Ieee Transactions On Nuclear Science. 56: 3115-3121. DOI: 10.1109/Tns.2009.2034150  0.745
2009 Warren KM, Sternberg AL, Black JD, Weller RA, Reed RA, Mendenhall MH, Schrimpf RD, Massengill LW. Heavy ion testing and single event upset rate prediction considerations for a DICE flip-flop Ieee Transactions On Nuclear Science. 56: 3130-3137. DOI: 10.1109/Tns.2009.2034146  0.649
2009 Armstrong SE, Olson BD, Popp J, Braatz J, Loveless TD, Holman WT, McMorrow D, Massengill LW. Single-event transient error characterization of a radiation-hardened by design 90 nm SerDes transmitter driver Ieee Transactions On Nuclear Science. 56: 3463-3468. DOI: 10.1109/Tns.2009.2033924  0.71
2009 Casey MC, Armstrong SE, Arora R, King MP, Ahlbin JR, Francis SA, Bhuva BL, McMorrow D, Hughes HL, McMarr PJ, Melinger JS, Massengill LW. Effect of total ionizing dose on a bulk 130 nm ring oscillator operating at ultra-low power Ieee Transactions On Nuclear Science. 56: 3262-3266. DOI: 10.1109/Tns.2009.2033919  0.787
2009 Loveless TD, Olson BD, Bhuva BL, Timothy Holman W, Hafer CC, Massengill LW. Analysis of single-event transients in integer-N frequency dividers and hardness assurance implications for phase-locked loops Ieee Transactions On Nuclear Science. 56: 3489-3498. DOI: 10.1109/Tns.2009.2033918  0.388
2009 Weller RA, Reed RA, Warren KM, Mendenhall MH, Sierawski BD, Schrimpf RD, Massengill LW. General framework for single event effects rate prediction in microelectronics Ieee Transactions On Nuclear Science. 56: 3098-3108. DOI: 10.1109/Tns.2009.2033916  0.352
2009 Kauppila JS, Sternberg AL, Alles ML, Matt Francis A, Holmes J, Amusan OA, Massengill LW. A bias-dependent single-event compact model implemented into BSIM4 and a 90 nm CMOS process design kit Ieee Transactions On Nuclear Science. 56: 3152-3157. DOI: 10.1109/Tns.2009.2033798  0.812
2009 Ahlbin JR, Massengill LW, Bhuva BL, Narasimham B, Gadlage MJ, Eaton PH. Single-event transient pulse quenching in advanced CMOS logic circuits Ieee Transactions On Nuclear Science. 56: 3050-3056. DOI: 10.1109/Tns.2009.2033689  0.79
2009 Amusan OA, Casey MC, Bhuva BL, McMorrow D, Gadlage MJ, Melinger JS, Massengill LW. Laser verification of charge sharing in a 90 nm Bulk CMOS process Ieee Transactions On Nuclear Science. 56: 3065-3070. DOI: 10.1109/Tns.2009.2032285  0.76
2009 Dasgupta S, Amusan OA, Alles ML, Witulski AF, Massengill LW, Bhuva BL, Schrimpf RD, Reed RA. Use of a contacted buried n+ layer for single event mitigation in 90 nm CMOS Ieee Transactions On Nuclear Science. 56: 2008-2013. DOI: 10.1109/Tns.2008.2012344  0.759
2009 Hutson JM, Pellish JA, Tipton AD, Boselli G, Xapsos MA, Kim H, Friendlich M, Campola M, Seidleck S, LaBel K, Marshall A, Deng X, Baumann R, Reed RA, Schrimpf RD, ... ... Massengill LW, et al. Evidence for lateral angle effect on single-event latchup in 65nm SRAMs Ieee Transactions On Nuclear Science. 56: 208-213. DOI: 10.1109/Tns.2008.2010395  0.387
2009 Narasimham B, Gadlage MJ, Bhuva BL, Schrimpf RD, Massengill LW, Holman WT, Witulski AF, Reed RA, Weller RA, Zhu X. Characterization of neutron- and alpha-particle-induced transients leading to soft errors in 90-nm CMOS technology Ieee Transactions On Device and Materials Reliability. 9: 325-333. DOI: 10.1109/Tdmr.2009.2020912  0.378
2009 Amusan OA, Massengill LW, Baze MP, Bhuva BL, Witulski AF, Black JD, Balasubramanian A, Casey MC, Black DA, Ahlbin JR, Reed RA, McCurdy MW. Mitigation techniques for single-event-induced charge sharing in a 90-nm bulk CMOS process Ieee Transactions On Device and Materials Reliability. 9: 311-317. DOI: 10.1109/Tdmr.2009.2019963  0.8
2008 Alles ML, Massengill LW, Schrimpf RD, Weller RA, Galloway KF. Single event effects in the nano ERA International Journal of High Speed Electronics and Systems. 18: 815-824. DOI: 10.1142/S0129156408005795  0.417
2008 Baze MP, Hughlock B, Wert J, Tostenrude J, Massengill L, Amusan O, Lacoe R, Lilja K, Johnson M. Angular Dependence of Single Event Sensitivity in Hardened Flip/Flop Designs Ieee Transactions On Nuclear Science. 55: 3295-3301. DOI: 10.1109/Tns.2008.2009115  0.725
2008 Balasubramanian A, Narasimham B, Bhuva BL, Massengill LW, Eaton PH, Sibley M, Mavis D. Implications of total dose on Single-Event Transient (SET) pulse width measurement techniques Ieee Transactions On Nuclear Science. 55: 3336-3341. DOI: 10.1109/Tns.2008.2007725  0.487
2008 Balasubramanian A, McMorrow D, Nation SA, Bhuva BL, Reed RA, Massengill LW, Loveless TD, Amusan OA, Black JD, Melinger JS, Baze MP, Ferlet-Cavrois V, Gaillardin M, Schwank JR. Pulsed laser single-event effects in highly scaled CMOS technologies in the presence of dense metal coverage Ieee Transactions On Nuclear Science. 55: 3401-3406. DOI: 10.1109/Tns.2008.2007295  0.764
2008 Amusan OA, Fleming PR, Bhuva BL, Massengill LW, Witulski AF, Balasubramanian A, Casey MC, McMorrow D, Nation SA, Barsun F, Melinger JS, Gadlage MJ, Loveless TD. Laser verification of on-chip charge-collection measurement circuit Ieee Transactions On Nuclear Science. 55: 3309-3313. DOI: 10.1109/Tns.2008.2007123  0.776
2008 Narasimham B, Gambles JW, Shuler RL, Bhuva BL, Massengill LW. Quantifying the effect of guard rings and guard drains in mitigating charge collection and charge spread Ieee Transactions On Nuclear Science. 55: 3456-3460. DOI: 10.1109/Tns.2008.2007119  0.469
2008 Nation SA, Massengill LW, McMorrow D, Evans L, Straatveit A. Laser Dose-Rate Simulation to Complement LINAC Discrete Device Data Ieee Transactions On Nuclear Science. 55: 3114-3121. DOI: 10.1109/Tns.2008.2006969  0.306
2008 Olson BD, Holman WT, Massengill LW, Bhuva BL, Fleming PR. Single-event effect mitigation in switched-capacitor comparator designs Ieee Transactions On Nuclear Science. 55: 3440-3446. DOI: 10.1109/Tns.2008.2006895  0.419
2008 Olson BD, Holman WT, Massengill LW, Bhuva BL. Evaluation of radiation-hardened design techniques using frequency domain analysis Ieee Transactions On Nuclear Science. 55: 2957-2961. DOI: 10.1109/Tns.2008.2006838  0.335
2008 Massengill LW, Tuinenga PW. Single-Event Transient Pulse Propagation in Digital CMOS Ieee Transactions On Nuclear Science. 55: 2861-2871. DOI: 10.1109/Tns.2008.2006749  0.441
2008 Balasubramanian A, Bhuva BL, Massengill LW, Narasimham B, Shuler RL, Loveless TD, Holman WT. A Built-In Self-Test (BIST) technique for single-event testing in digital circuits Ieee Transactions On Nuclear Science. 55: 3130-3135. DOI: 10.1109/Tns.2008.2006499  0.402
2008 Warren KM, Sternberg AL, Weller RA, Baze MP, Massengill LW, Reed RA, Mendenhall MH, Schrimpf RD. Integrating circuit level simulation and Monte-Carlo radiation transport code for single event upset analysis in SEU hardened circuitry Ieee Transactions On Nuclear Science. 55: 2886-2894. DOI: 10.1109/Tns.2008.2006481  0.664
2008 Casey MC, Amusan OA, Nation SA, Loveless TD, Balasubramanian A, Bhuva BL, Reed RA, McMorrow D, Weller RA, Alles ML, Massengill LW, Melinger JS, Narasimham B. Single-event effects on combinational logic circuits operating at ultra-low power Ieee Transactions On Nuclear Science. 55: 3342-3346. DOI: 10.1109/Tns.2008.2005901  0.745
2008 Ahlbin JR, Black JD, Massengill LW, Amusan OA, Balasubramanian A, Casey MC, Black DA, McCurdy MW, Reed RA, Bhuva BL. C-CREST technique for combinational logic SET testing Ieee Transactions On Nuclear Science. 55: 3347-3351. DOI: 10.1109/Tns.2008.2005900  0.795
2008 Casey MC, Duncan AR, Bhuva BL, Robinson WH, Massengill LW. Simulation study on the effect of multiple node charge collection on error cross-section in CMOS sequential logic Ieee Transactions On Nuclear Science. 55: 3136-3140. DOI: 10.1109/Tns.2008.2005895  0.426
2008 Roy T, Witulski AF, Schrimpf RD, Alles ML, Massengill LW. Single event mechanisms in 90 nm triple-well CMOS devices Ieee Transactions On Nuclear Science. 55: 2948-2956. DOI: 10.1109/Tns.2008.2005831  0.391
2008 Loveless TD, Massengill LW, Bhuva BL, Holman WT, Casey MC, Reed RA, Nation SA, McMorrow D, Melinger JS. A probabilistic analysis technique applied to a radiation-hardened-by- design voltage-controlled oscillator for mixed-signal phase-locked loops Ieee Transactions On Nuclear Science. 55: 3447-3455. DOI: 10.1109/Tns.2008.2005677  0.375
2008 Schrimpf RD, Warren KM, Ball DR, Weller RA, Reed RA, Fleetwood DM, Massengill LW, Mendenhall MH, Rashkeev SN, Pantelides ST, Alles MA. Multi-Scale Simulation of Radiation Effects in Electronic Devices Ieee Transactions On Nuclear Science. 55: 1891-1902. DOI: 10.1109/Tns.2008.2000853  0.386
2008 Balasubramanian A, Amusan OA, Bhuva BL, Reed RA, Sternberg AL, Massengill LW, McMorrow D, Nation SA, Melinger JS. Measurement and analysis of interconnect crosstalk due to single events in a 90 nm CMOS technology Ieee Transactions On Nuclear Science. 55: 2079-2084. DOI: 10.1109/Tns.2008.2000781  0.831
2008 Amusan OA, Massengill LW, Baze MP, Sternberg AL, Witulski AF, Bhuva BL, Black JD. Single event upsets in deep-submicrometer technologies due to charge sharing Ieee Transactions On Device and Materials Reliability. 8: 582-589. DOI: 10.1109/Tdmr.2008.2000892  0.825
2008 Balasubramanian A, Fleming PR, Bhuva BL, Sternberg AL, Massengill LW. Implications of dopant-fluctuation-induced Vt variations on the radiation hardness of deep submicrometer CMOS SRAMs Ieee Transactions On Device and Materials Reliability. 8: 135-143. DOI: 10.1109/Tdmr.2007.915011  0.674
2008 Narasimham B, Shuler RL, Black JD, Bhuva BL, Schrimpf RD, Witulski AF, Holman WT, Massengill LW. Quantifying the reduction in collected charge and soft errors in the presence of guard rings Ieee Transactions On Device and Materials Reliability. 8: 203-208. DOI: 10.1109/Tdmr.2007.912778  0.447
2008 Fleming PR, Olson BD, Holman WT, Bhuva BL, Massengill LW. Design technique for mitigation of soft errors in differential switched-capacitor circuits Ieee Transactions On Circuits and Systems Ii: Express Briefs. 55: 838-842. DOI: 10.1109/Tcsii.2008.923437  0.423
2008 Gadlage MJ, Schrimpf RD, Narasimham B, Pellish JA, Warren KM, Reed RA, Weller RA, Bhuva BL, Massengill LW, Zhu X. Assessing alpha particle-induced single event transient vulnerability in a 90-nm CMOS technology Ieee Electron Device Letters. 29: 638-640. DOI: 10.1109/Led.2008.922314  0.444
2007 Massengill LW, Cressler J, Crain S, Barnaby H, Farris T, Dyer C, Cohn L, Templeton B, Pineda A, Rosenfeld A, McClure S, Holman T, Marshall C, Bernacki S, Boulghassoul Y, et al. Editorial conference comments by the general chairman Ieee Transactions On Nuclear Science. 54: 1871-1873. DOI: 10.1109/Tns.2007.912276  0.695
2007 DasGupta S, Witulski AF, Bhuva BL, Alles ML, Reed RA, Amusan OA, Ahlbin JR, Schrimpf RD, Massengill LW. Effect of well and substrate potential modulation on single event pulse shape in deep submicron CMOS Ieee Transactions On Nuclear Science. 54: 2407-2412. DOI: 10.1109/Tns.2007.910863  0.823
2007 Hutson JM, Pellish JD, Boselli G, Baumann R, Reed RA, Schrimpf RD, Weller RA, Massengill LW. The effects of angle of incidence and temperature on latchup in 65 nm technology Ieee Transactions On Nuclear Science. 54: 2541-2546. DOI: 10.1109/Tns.2007.910330  0.351
2007 Kauppila AV, Vaughn GL, Kauppila JS, Massengill LW. Probabilistic evaluation of analog single event transients Ieee Transactions On Nuclear Science. 54: 2131-2136. DOI: 10.1109/Tns.2007.910166  0.365
2007 Narasimham B, Bhuva BL, Schrimpf RD, Massengill LW, Gadlage MJ, Amusan OA, Holman WT, Witulski AF, Robinson WH, Black JD, Benedetto JM, Eaton PH. Characterization of digital single event transient pulse-widths in 130-nm and 90-nm CMOS technologies Ieee Transactions On Nuclear Science. 54: 2506-2511. DOI: 10.1109/Tns.2007.910125  0.764
2007 Kelly AT, Fleming PR, Holman WT, Witulski AF, Bhuva BL, Massengill LW. Differential analog layout for improved ASET tolerance Ieee Transactions On Nuclear Science. 54: 2053-2059. DOI: 10.1109/Tns.2007.910124  0.423
2007 Reed RA, Weller RA, Mendenhall MH, Lauenstein JM, Warren KM, Pellish JA, Schrimpf RD, Sierawski BD, Massengill LW, Dodd PE, Shanevfelt MR, Felix JA, Schwank JR, Haddad NK, Lawrence RK, et al. Impact of ion energy and species on single event effects analysis Ieee Transactions On Nuclear Science. 54: 2312-2321. DOI: 10.1109/Tns.2007.909901  0.365
2007 Balasubramanian A, Fleming PR, Bhuva BL, Amusan OA, Massengill LW. Effects of Random Dopant Fluctuations (RDF) on the single event vulnerability of 90 and 65 nm CMOS technologies Ieee Transactions On Nuclear Science. 54: 2400-2406. DOI: 10.1109/Tns.2007.908167  0.791
2007 Loveless TD, Massengill LW, Bhuva BL, Holman WT, Reed RA, McMorrow D, Melinger JS, Jenkins P. A single-event-hardened phase-locked loop fabricated in 130 nm CMOS Ieee Transactions On Nuclear Science. 54: 2012-2020. DOI: 10.1109/Tns.2007.908166  0.494
2007 Amusan OA, Massengill LW, Baze MP, Bhuva BL, Witulski AF, DasGupta S, Sternberg AL, Fleming PR, Heath CC, Alles ML. Directional sensitivity of single event upsets in 90 nm CMOS due to charge sharing Ieee Transactions On Nuclear Science. 54: 2584-2589. DOI: 10.1109/Tns.2007.907989  0.812
2007 Loveless TD, Massengill LW, Holman WT, Bhuva BL. Modeling and mitigating single-event transients in voltage-controlled oscillators Ieee Transactions On Nuclear Science. 54: 2561-2567. DOI: 10.1109/Tns.2007.907988  0.438
2007 Amusan OA, Massengill LW, Bhuva BL, DasGupta S, Witulski AF, Ahlbin JR. Design techniques to reduce SET pulse widths in deep-submicron combinational logic Ieee Transactions On Nuclear Science. 54: 2060-2064. DOI: 10.1109/Tns.2007.907754  0.813
2007 Warren KM, Sierawski BD, Reed RA, Weller RA, Carmichael C, Lesea A, Mendenhall MH, Dodd PE, Schrimpf RD, Massengill LW, Hoang T, Wan H, De Jong JL, Padovani R, Fabula JJ. Monte-Carlo based on-orbit single event upset rate prediction for a radiation hardened by design latch Ieee Transactions On Nuclear Science. 54: 2419-2425. DOI: 10.1109/Tns.2007.907678  0.449
2007 Olson BD, Amusan OA, Dasgupta S, Massengill LW, Witulski AF, Bhuva BL, Alles ML, Warren KM, Ball DR. Analysis of parasitic PNP bipolar transistor mitigation using well contacts in 130 nm and 90 nm CMOS technology Ieee Transactions On Nuclear Science. 54: 894-897. DOI: 10.1109/Tns.2007.895243  0.734
2007 Bajura MA, Boulghassoul Y, Naseer R, DasGupta S, Witulski AF, Sondeen J, Stansberry SD, Draper J, Massengill LW, Damoulakis JN. Models and algorithmic limits for an ECC-based approach to hardening sub-100-nm SRAMs Ieee Transactions On Nuclear Science. 54: 935-945. DOI: 10.1109/Tns.2007.892119  0.729
2007 Warren KM, Weller RA, Sierawski BD, Reed RA, Mendenhall MH, Schrimpf RD, Massengill LW, Porter ME, Wilkinson JD, LaBel KA, Adams JH. Application of RADSAFE to model the single event upset response of a 0.25 μm CMOS SRAM Ieee Transactions On Nuclear Science. 54: 898-903. DOI: 10.1109/Tns.2006.889810  0.42
2007 Warren KM, Sierawski BD, Weller RA, Reed RA, Mendenhall MH, Pellish JA, Schrimpf RD, Massengill LW, Porter ME, Wilkinson JD. Predicting thermal neutron-induced soft errors in static memories using TCAD and physics-based monte carlo simulation tools Ieee Electron Device Letters. 28: 180-182. DOI: 10.1109/Led.2006.889632  0.337
2007 Schrimpf RD, Weller RA, Mendenhall MH, Reed RA, Massengill LW. Physical mechanisms of single-event effects in advanced microelectronics Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 261: 1133-1136. DOI: 10.1016/J.Nimb.2007.04.050  0.358
2006 Sternberg AL, Massengill LW, Hale M, Blalock B. Single-event sensitivity and hardening of a pipelined analog-to-digital converter Ieee Transactions On Nuclear Science. 53: 3532-3538. DOI: 10.1109/Tns.2006.886204  0.697
2006 Loveless TD, Massengill LW, Bhuva BL, Holman WT, Witulski AF, Boulghassoul Y. A hardened-by-design technique for RF digital phase-locked loops Ieee Transactions On Nuclear Science. 53: 3432-3438. DOI: 10.1109/Tns.2006.886203  0.777
2006 Reed RA, Weller RA, Schrimpf RD, Mendenhall MH, Warren KM, Massengill LW. Implications of Nuclear Reactions for Single Event Effects Test Methods and Analysis Ieee Transactions On Nuclear Science. 53: 3356-3362. DOI: 10.1109/Tns.2006.885950  0.37
2006 Narasimham B, Bhuva BL, Holman WT, Schrimpf RD, Massengill LW, Witulski AF, Robinson WH. The effect of negative feedback on single event transient propagation in digital circuits Ieee Transactions On Nuclear Science. 53: 3285-3290. DOI: 10.1109/Tns.2006.885380  0.498
2006 Casey MC, Bhuva BL, Black JD, Massengill LW, Amusan OA, Witulski AF. Single-event tolerant latch using cascode-voltage switch logic gates Ieee Transactions On Nuclear Science. 53: 3386-3391. DOI: 10.1109/Tns.2006.884970  0.77
2006 Baze MP, Wert J, Clement JW, Hubert MG, Witulski A, Amusan OA, Massengill L, McMorrow D. Propagating SET characterization technique for digital CMOS libraries Ieee Transactions On Nuclear Science. 53: 3472-3478. DOI: 10.1109/Tns.2006.884969  0.764
2006 Amusan OA, Witulski AF, Massengill LW, Bhuva BL, Fleming PR, Alles ML, Sternberg AL, Black JD, Schrimpf RD. Charge collection and charge sharing in a 130 nm CMOS technology Ieee Transactions On Nuclear Science. 53: 3253-3258. DOI: 10.1109/Tns.2006.884788  0.798
2006 Balasubramanian A, Sternberg AL, Bhuva BL, Massengill LW. Crosstalk effects caused by single event hits in deep sub-micron CMOS technologies Ieee Transactions On Nuclear Science. 53: 3306-3311. DOI: 10.1109/Tns.2006.884675  0.723
2006 Sierawski BD, Bhuva BL, Massengill LW. Reducing soft error rate in logic circuits through approximate logic functions Ieee Transactions On Nuclear Science. 53: 3417-3421. DOI: 10.1109/Tns.2006.884352  0.437
2006 Narasimham B, Ramachandran V, Bhuva BL, Schrimpf RD, Witulski AF, Holman WT, Massengill LW, Black JD, Robinson WH, McMorrow D. On-chip characterization of single-event transient pulsewidths Ieee Transactions On Device and Materials Reliability. 6: 542-548. DOI: 10.1109/Tdmr.2006.885589  0.466
2005 Boulghassoul Y, Massengill LW, Sternberg AL, Bhuva BL. Effects of technology scaling on the SET sensitivity of RF CMOS voltage-controlled oscillators Ieee Transactions On Nuclear Science. 52: 2426-2432. DOI: 10.1109/Tns.2005.860739  0.818
2005 Balasubramanian A, Bhuva BL, Black JD, Massengill LW. RHBD techniques for mitigating effects of single-event hits using guard-gates Ieee Transactions On Nuclear Science. 52: 2531-2535. DOI: 10.1109/Tns.2005.860719  0.438
2005 Black JD, Sternberg AL, Alles ML, Witulski AF, Bhuva BL, Massengill LW, Benedetto JM, Baze MP, Wert JL, Hubert MG. HBD layout isolation techniques for multiple node charge collection mitigation Ieee Transactions On Nuclear Science. 52: 2536-2541. DOI: 10.1109/Tns.2005.860718  0.658
2005 Casey MC, Bhuva BL, Black JD, Massengill LW. HBD using cascode-voltage switch logic gates for SET tolerant digital designs Ieee Transactions On Nuclear Science. 52: 2510-2515. DOI: 10.1109/Tns.2005.860715  0.449
2005 Srinivasan V, Sternberg AL, Duncan AR, Robinson WH, Bhuva BL, Massengill LW. Single-event mitigation in combinational logic using targeted data path hardening Ieee Transactions On Nuclear Science. 52: 2516-2523. DOI: 10.1109/Tns.2005.860714  0.681
2005 Duncan AR, Srinivasan V, Sternberg AL, Robinson WH, Bhuva BL, Massengill LW. Comparison of SEUTool results to experimental results in boeing radiation tolerant DSP (BDSP C30) Ieee Transactions On Nuclear Science. 52: 2224-2230. DOI: 10.1109/Tns.2005.860693  0.66
2005 Petersen EL, Pouget V, Massengill LW, Buchner SP, McMorrow D. Rate predictions for single-event effects - Critique II Ieee Transactions On Nuclear Science. 52: 2158-2167. DOI: 10.1109/Tns.2005.860687  0.43
2005 Olson BD, Ball DR, Warren KM, Massengill LW, Haddad NF, Doyle SE, McMorrow D. Simultaneous single event charge sharing and parasitic bipolar conduction in a highly-scaled SRAM design Ieee Transactions On Nuclear Science. 52: 2132-2136. DOI: 10.1109/Tns.2005.860684  0.395
2005 Howe CL, Weller RA, Reed RA, Mendenhall MH, Schrimpf RD, Warren KM, Ball DR, Massengill LW, LaBel KA, Howard JW, Haddad NF. Role of heavy-ion nuclear reactions in determining on-orbit single event error rates Ieee Transactions On Nuclear Science. 52: 2182-2188. DOI: 10.1109/Tns.2005.860683  0.34
2005 Warren KM, Weller RA, Mendenhall MH, Reed RA, Ball DR, Howe CL, Olson BD, Alles ML, Massengill LW, Schrimpf RD, Haddad NF, Doyle SE, McMorrow D, Melinger JS, Lotshaw WT. The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM Ieee Transactions On Nuclear Science. 52: 2125-2131. DOI: 10.1109/Tns.2005.860677  0.348
2005 McMorrow D, Lotshaw WT, Melinger JS, Buchner S, Davis JD, Lawrence RK, Bowman JH, Brown RD, Carlton D, Pena J, Vasquez J, Haddad N, Warren K, Massengill L. Single-event upset in flip-chip SRAM induced by through-wafer, two-photon absorption Ieee Transactions On Nuclear Science. 52: 2421-2425. DOI: 10.1109/Tns.2005.860673  0.395
2004 Boulghassoul Y, Buchner S, McMorrow D, Pouget V, Massengill LW, Fouillat P, Holman WT, Poivey C, Howard JW, Savage M, Maher MC. Investigation of millisecond-long analog single-event transients in the LM6144 op amp Ieee Transactions On Nuclear Science. 51: 3529-3536. DOI: 10.1109/Tns.2004.839196  0.799
2004 Kobayashi AS, Sternberg AL, Massengill LW, Schrimpf RD, Weller RA. Spatial and temporal characteristics of energy deposition by protons and alpha particles in silicon Ieee Transactions On Nuclear Science. 51: 3312-3317. DOI: 10.1109/Tns.2004.839176  0.6
2004 Kauppila JS, Massengill LW, Tim Holman W, Kauppila AV, Sanathanamurthy S. Single event simulation methodology for analog/mixed signal design Hardening Ieee Transactions On Nuclear Science. 51: 3603-3608. DOI: 10.1109/Tns.2004.839162  0.411
2004 Kauppila AV, Massengill LW, Holman WT, Vaughn GL, Kauppila JS. Frequency-domain analysis of analog single-event transients (ASETs) based on energy spectral density Ieee Transactions On Nuclear Science. 51: 3537-3545. DOI: 10.1109/Tns.2004.839108  0.304
2003 McMorrow D, Lotshaw WT, Melinger JS, Buchner SP, Boulghassoul Y, Massengill LW, Pease R. 2003 IEEE nuclear and space radiation effects conference outstanding conference paper award Ieee Transactions On Nuclear Science. 50: 1769-1771. DOI: 10.1109/Tns.2003.822129  0.712
2003 Weller RA, Sternberg AL, Massengill LW, Schrimpf RD, Fleetwood DM. Evaluating Average and Atypical Response in Radiation Effects Simulations Ieee Transactions On Nuclear Science. 50: 2265-2271. DOI: 10.1109/Tns.2003.821576  0.646
2003 Boulghassoul Y, Rowe JD, Massengill LW. Applicability of Circuit Macromodeling to Analog Single-Event Transient Analysis Ieee Transactions On Nuclear Science. 50: 2119-2125. DOI: 10.1109/Tns.2003.821393  0.78
2003 McMorrow D, Lotshaw WT, Melinger JS, Buchner S, Boulghassoul Y, Massengill LW, Pease RL. Three-Dimensional Mapping of Single-Event Effects Using Two Photon Absorption Ieee Transactions On Nuclear Science. 50: 2199-2207. DOI: 10.1109/Tns.2003.820742  0.765
2003 Dodd PE, Massengill LW. Basic mechanisms and modeling of single-event upset in digital microelectronics Ieee Transactions On Nuclear Science. 50: 583-602. DOI: 10.1109/Tns.2003.813129  0.441
2002 Seifert N, Zhu X, Massengill LW. Impact of scaling on soft-error rates in commercial microprocessors Ieee Transactions On Nuclear Science. 49: 3100-3106. DOI: 10.1109/Tns.2002.805402  0.335
2002 Boulghassoul Y, Massengill LW, Sternberg AL, Pease RL, Buchner S, Howard JW, McMorrow D, Savage MW, Poivey C. Circuit modeling of the LM124 operational amplifier for analog single-event transient analysis Ieee Transactions On Nuclear Science. 49: 3090-3096. DOI: 10.1109/Tns.2002.805400  0.82
2002 Choi BK, Fleetwood DM, Schrimpf RD, Massengill LW, Galloway KF, Shaneyfelt MR, Meisenheimer TL, Dodd PE, Schwank JR, Lee YM, John RS, Lucovsky G. Long-term reliability degradation of ultrathin dielectric films due to heavy-ion irradiation Ieee Transactions On Nuclear Science. 49: 3045-3050. DOI: 10.1109/Tns.2002.805389  0.322
2002 Pease RL, Sternberg AL, Boulghassoul Y, Massengill LW, Buchner S, McMorrow D, Walsh DS, Hash GL, LaLumondiere SD, Moss SC. Comparison of SETs in bipolar linear circuits generated with an ion microbeam, laser light, and circuit simulation Ieee Transactions On Nuclear Science. 49: 3163-3170. DOI: 10.1109/Tns.2002.805346  0.823
2002 Sternberg AL, Massengill LW, Buchner S, Pease RL, Boulghassoul Y, Savage MW, McMorrow D, Weller RA. The role of parasitic elements in the single-event transient response of linear circuits Ieee Transactions On Nuclear Science. 49: 3115-3120. DOI: 10.1109/Tns.2002.805340  0.8
2002 Boulghassoul Y, Massengill LW, Turflinger TL, Holman WT. Frequency domain analysis of analog single-event transients in linear circuits Ieee Transactions On Nuclear Science. 49: 3142-3147. DOI: 10.1109/Tns.2002.805330  0.761
2002 Buchner S, McMorrow D, Sternberg A, Massengill L, Pease RL, Maher M. Single-event transient (SET) characterization of an LM119 voltage comparator: an approach to SET model validation using a pulsed laser Ieee Transactions On Nuclear Science. 49: 1502-1508. DOI: 10.1109/Tns.2002.1039691  0.426
2002 Sternberg AL, Massengill LW, Schrimpf RD, Boulghassoul Y, Barnaby HJ, Buchner S, Pease RL, Howard JW. Effect of amplifier parameters on single-event transients in an inverting operational amplifier Ieee Transactions On Nuclear Science. 49: 1496-1501. DOI: 10.1109/Tns.2002.1039690  0.804
2001 Zhu X, Bhuva B, Cirba CR, Massengill L, Buchner S, Dodd PE. A methodology for identifying laser parameters for equivalent heavy-ion hits Ieee Transactions On Nuclear Science. 48: 2174-2179. DOI: 10.1109/23.983192  0.39
2001 Pease RL, Sternberg A, Massengill L, Schrimpf R, Buchner S, Savage M, Titus J, Turflinger T. Critical charge for single-event transients (SETs) in bipolar linear circuits Ieee Transactions On Nuclear Science. 48: 1966-1972. DOI: 10.1109/23.983158  0.448
2001 Massengill L, Choi B, Fleetwood D, Schrimpf R, Galloway K, Shaneyfelt M, Meisenheimer T, Dodd P, Schwank J, Lee Y, Johnson R, Lucovsky G. Heavy-ion-induced breakdown in ultra-thin gate oxides and high-k dielectrics Ieee Transactions On Nuclear Science. 48: 1904-1912. DOI: 10.1109/23.983149  0.343
2001 Sternberg AL, Massengill LW, Schrimpf RD, Calvel P. Application determinance of single-event transient characteristics in the LM111 comparator Ieee Transactions On Nuclear Science. 48: 1855-1858. DOI: 10.1109/23.983142  0.687
2000 Massengill LW, Baranski AE, Van Nort DO, Meng J, Bhuva BL. Analysis of single-event effects in combinational logic-simulation of the AM2901 bitslice processor Ieee Transactions On Nuclear Science. 47: 2609-2615. DOI: 10.1109/23.903816  0.443
2000 Zhu X, Massengill LW, Cirba CR. The effects of nonphysical carrier velocities in high-gradient single event track simulations Ieee Transactions On Nuclear Science. 47: 2568-2574. DOI: 10.1109/23.903810  0.315
1999 Youk GU, Khare PS, Schrimpf RD, Massengill LW, Galloway KF. Radiation-enhanced short channel effects due to multi-dimensional influence from charge at trench isolation oxides Ieee Transactions On Nuclear Science. 46: 1830-1835. DOI: 10.1109/23.819161  0.364
1999 Zhu XW, Massengill LW, Cirba CR, Barnaby HJ. Charge déposition modeling of thermal neutron products in fast submicron MOS devices Ieee Transactions On Nuclear Science. 46: 1378-1385. DOI: 10.1109/23.819096  0.302
1999 Warren K, Massengill L, Schrimpf R, Barnaby H. Analysis of the influence of MOS device geometry on predicted SEU cross sections Ieee Transactions On Nuclear Science. 46: 1363-1369. DOI: 10.1109/23.819094  0.348
1998 Milanowski RJ, Pagey MP, Massengill LW, Schrimpf RD, Wood ME, Offord BW, Graves RJ, Galloway KF, Nicklaw CJ, Kelley EP. TCAD-Assisted analysis of back-channel leakage in irradiated mesa SOI nMOSFETs Ieee Transactions On Nuclear Science. 45: 2593-2599. DOI: 10.1109/23.736502  0.342
1996 Massengill LW. Cosmic and terrestrial single-event radiation effects in dynamic random access memories Ieee Transactions On Nuclear Science. 43: 576-593. DOI: 10.1109/23.490902  0.393
1996 Main JA, Newton DV, Massengill L, Garcia E. Efficient power amplifiers for piezoelectric applications Smart Materials and Structures. 5: 766-775. DOI: 10.1088/0964-1726/5/6/006  0.311
1994 Velacheri S, Massengill LW, Kerns SE. Single-event-induced charge collection and direct channel conduction in submicron MOSFETs Ieee Transactions On Nuclear Science. 41: 2103-2111. DOI: 10.1109/23.340549  0.349
1994 Agrawal GR, Massengill LW, Gulati K. A proposed SEU tolerant dynamic random access memory (DRAM) cell Ieee Transactions On Nuclear Science. 41: 2035-2042. DOI: 10.1109/23.340539  0.378
1994 Gulati K, Massengill LW, Agrawal GR. Single event mirroring and DRAM sense amplifier designs for improved single-event-upset performance Ieee Transactions On Nuclear Science. 41: 2026-2034. DOI: 10.1109/23.340538  0.401
1993 Massengill LW, Alles ML, Kerns SE, Jones KL. Effects of process parameter distributions and ion strike locations on SEU cross-section data (CMOS SRAMs) Ieee Transactions On Nuclear Science. 40: 1804-1811. DOI: 10.1109/23.273476  0.334
1991 Massengill LW. SEU-hardened resistive-load static RAMs Ieee Transactions On Nuclear Science. 38: 1478-1485. DOI: 10.1109/23.124135  0.391
1991 Alles ML, Kerns SE, Massengill LW, Clark JE, Jones KL, Lowther RE. Body tie placement in CMOS/SOI digital circuits for transient radiation environments Ieee Transactions On Nuclear Science. 38: 1259-1264. DOI: 10.1109/23.124102  0.369
1990 Massengill LW, Kerns EV, Kerns SE, Alles ML. Single-event charge enhancement in SOI devices Ieee Electron Device Letters. 11: 98-99. DOI: 10.1109/55.46941  0.373
1990 Bhuva B, Mehrotra S, Massengill L, Kerns S. Automated photocurrent and bussing extraction for dose-rate rail span collapse simulations Ieee Transactions On Nuclear Science. 37: 2104-2109. DOI: 10.1109/23.101236  0.322
1989 Kerns SE, Massengill LW, Kerns DV, Alles ML, Houston TW, Lu H, Hite LR. Model for CMOS/SOl Single-Event Vulnerability Ieee Transactions On Nuclear Science. 36: 2305-2310. DOI: 10.1109/23.45440  0.419
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