| Year |
Citation |
Score |
| 2011 |
Huang Y, Ryou JH, Dupuis RD, D'costa VR, Steenbergen EH, Fan J, Zhang YH, Petschke A, Mandl M, Chuang SL. Epitaxial growth and characterization of InAs/GaSb and InAs/InAsSb type-II superlattices on GaSb substrates by metalorganic chemical vapor deposition for long wavelength infrared photodetectors Journal of Crystal Growth. 314: 92-96. DOI: 10.1016/J.Jcrysgro.2010.11.003 |
0.58 |
|
| 2010 |
Huang Y, Ryou JH, Dupuis RD, Petschke A, Mandl M, Chuang SL. InAs/GaSb type-II superlattice structures and photodiodes grown by metalorganic chemical vapor deposition Applied Physics Letters. 96. DOI: 10.1063/1.3456386 |
0.644 |
|
| 2010 |
Petschke A, Mandl M, Chuang SL, Huang Y, Ryou JH, Dupuis RD. Metal-organic chemical vapour deposition growth of InAs/GaSb type-II superlattice photodiodes Electronics Letters. 46: 1151-1152. DOI: 10.1049/El.2010.1308 |
0.555 |
|
| 2008 |
Mou S, Petschke A, Lou Q, Chuang SL, Li JV, Hill CJ. Midinfrared InAsGaSb type-II superlattice interband tunneling photodetectors Applied Physics Letters. 92. DOI: 10.1063/1.2909538 |
0.523 |
|
| 2007 |
Zhang XB, Ryou JH, Dupuis RD, Xu C, Mou S, Petschke A, Hsieh KC, Chuang SL. Improved surface and structural properties of InAs/GaSb superlattices on (001) GaSb substrate by introducing an InAsSb layer at interfaces Applied Physics Letters. 90. DOI: 10.1063/1.2717524 |
0.586 |
|
| 2006 |
Zhang XB, Ryou JH, Dupuis RD, Petschke A, Mou S, Chuang SL, Xu C, Hsieh KC. Metalorganic chemical vapor deposition growth of high-quality InAsGaSb type II superlattices on (001) GaAs substrates Applied Physics Letters. 88. DOI: 10.1063/1.2168668 |
0.593 |
|
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