Year |
Citation |
Score |
2023 |
Roberts DM, Kim H, McClure EL, Lu K, Mangum JS, Braun AK, Ptak AJ, Schulte KL, Kim J, Simon J. Nucleation and Growth of GaAs on a Carbon Release Layer by Halide Vapor Phase Epitaxy. Acs Omega. 8: 45088-45095. PMID 38046304 DOI: 10.1021/acsomega.3c07162 |
0.382 |
|
2020 |
Schulte KL, Guthrey HL, Geisz JF. Guided Optimization of Phase-Unstable III–V Compositionally Graded Buffers by Cathodoluminescence Spectrum Imaging Ieee Journal of Photovoltaics. 10: 109-116. DOI: 10.1109/Jphotov.2019.2951927 |
0.417 |
|
2020 |
Schulte KL, Diercks DR, Roberts DM, Dippo PC, Packard CE, Simon J, Ptak AJ. Effect of hydride vapor phase epitaxy growth conditions on the degree of atomic ordering in GaInP Journal of Applied Physics. 128: 25704. DOI: 10.1063/5.0010680 |
0.364 |
|
2020 |
McClure EL, Schulte KL, Simon J, Metaferia W, Ptak AJ. GaAs growth rates of 528 μm/h using dynamic-hydride vapor phase epitaxy with a nitrogen carrier gas Applied Physics Letters. 116: 182102. DOI: 10.1063/5.0002053 |
0.401 |
|
2020 |
Geisz JF, Schulte KL, Steiner MA, Norman AG, Guthrey HL, Young MR, Song T, Moriarty T. Six-junction III–V solar cells with 47.1% conversion efficiency under 143 Suns concentration Nature Energy. 5: 326-335. DOI: 10.1038/S41560-020-0598-5 |
0.346 |
|
2019 |
Metaferia W, Schulte KL, Simon J, Johnston S, Ptak AJ. Publisher Correction: Gallium arsenide solar cells grown at rates exceeding 300 µm h by hydride vapor phase epitaxy. Nature Communications. 10: 4070. PMID 31481675 DOI: 10.1038/S41467-019-11927-X |
0.355 |
|
2019 |
Xiao C, Jiang CS, Liu J, Norman A, Moseley J, Schulte K, Ptak AJ, Gorman B, Al-Jassim M, Haegel NM, Moutinho H. Carrier-Transport Study of Gallium Arsenide Hillock Defects. Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada. 1-7. PMID 31475657 DOI: 10.1017/S1431927619014909 |
0.352 |
|
2019 |
Metaferia W, Schulte KL, Simon J, Johnston S, Ptak AJ. Gallium arsenide solar cells grown at rates exceeding 300 µm h by hydride vapor phase epitaxy. Nature Communications. 10: 3361. PMID 31350402 DOI: 10.1038/S41467-019-11341-3 |
0.459 |
|
2019 |
Schulte KL, Steiner MA, Young MR, Geisz JF. Internal Resistive Barriers Related to Zinc Diffusion During the Growth of Inverted Metamorphic Multijunction Solar Cells Ieee Journal of Photovoltaics. 9: 167-173. DOI: 10.1109/Jphotov.2018.2878317 |
0.442 |
|
2019 |
Schulte KL, Metaferia W, Simon J, Ptak AJ. Uniformity of GaAs solar cells grown in a kinetically-limited regime by dynamic hydride vapor phase epitaxy Solar Energy Materials and Solar Cells. 197: 84-92. DOI: 10.1016/J.Solmat.2019.04.001 |
0.464 |
|
2019 |
Park S, Simon J, Schulte KL, Ptak AJ, Wi JS, Young DL, Oh J. Germanium-on-Nothing for Epitaxial Liftoff of GaAs Solar Cells Joule. 3: 1782-1793. DOI: 10.1016/J.Joule.2019.05.013 |
0.465 |
|
2018 |
Simon J, Schulte KL, Horowitz KAW, Remo T, Young DL, Ptak AJ. III-V-Based Optoelectronics with Low-Cost Dynamic Hydride Vapor Phase Epitaxy Arxiv: Applied Physics. 9: 3. DOI: 10.3390/Cryst9010003 |
0.36 |
|
2018 |
Schulte KL, Simon J, Young MR, Ptak AJ. Improvement of Short-Circuit Current Density in GaInP Solar Cells Grown by Dynamic Hydride Vapor Phase Epitaxy Ieee Journal of Photovoltaics. 8: 1616-1620. DOI: 10.1109/Jphotov.2018.2870938 |
0.461 |
|
2018 |
Jain N, Simon J, Schulte KL, Friedman DJ, Diercks DR, Packard CE, Young DL, Ptak AJ. Tunable Bandgap GaInAsP Solar Cells With 18.7% Photoconversion Efficiency Synthesized by Low-Cost and High-Growth Rate Hydride Vapor Phase Epitaxy Ieee Journal of Photovoltaics. 8: 1577-1583. DOI: 10.1109/Jphotov.2018.2865172 |
0.45 |
|
2018 |
Jain N, Crouse D, Simon J, Johnston S, Siol S, Schulte KL, Packard CE, Young DL, Ptak AJ. III–V Solar Cells Grown on Unpolished and Reusable Spalled Ge Substrates Ieee Journal of Photovoltaics. 8: 1384-1389. DOI: 10.1109/Jphotov.2018.2851283 |
0.455 |
|
2018 |
Schulte KL, Guthrey HL, Geisz JF. Strategies for Thinning Graded Buffer Regions in Metamorphic Solar Cells and Performance Tradeoffs Ieee Journal of Photovoltaics. 8: 1349-1354. DOI: 10.1109/Jphotov.2018.2841499 |
0.443 |
|
2018 |
Geisz JF, Steiner MA, Jain N, Schulte KL, France RM, McMahon WE, Perl EE, Friedman DJ. Building a Six-Junction Inverted Metamorphic Concentrator Solar Cell Ieee Journal of Photovoltaics. 8: 626-632. DOI: 10.1109/Jphotov.2017.2778567 |
0.363 |
|
2018 |
Ptak AJ, Simon J, Schulte KL, Jain N. Tunnel Junction Development Using Hydride Vapor Phase Epitaxy Ieee Journal of Photovoltaics. 8: 322-326. DOI: 10.1109/Jphotov.2017.2756566 |
0.457 |
|
2018 |
Schulte KL, Braun A, Simon J, Ptak AJ. High growth rate hydride vapor phase epitaxy at low temperature through use of uncracked hydrides Applied Physics Letters. 112: 42101. DOI: 10.1063/1.5013136 |
0.44 |
|
2018 |
Jain N, Schulte KL, Geisz JF, Friedman DJ, France RM, Perl EE, Norman AG, Guthrey HL, Steiner MA. High-efficiency inverted metamorphic 1.7/1.1 eV GaInAsP/GaInAs dual-junction solar cells Applied Physics Letters. 112: 053905. DOI: 10.1063/1.5008517 |
0.406 |
|
2018 |
Crouse D, Simon J, Schulte KL, Young DL, Ptak AJ, Packard CE. Increased fracture depth range in controlled spalling of (100)-oriented germanium via electroplating Thin Solid Films. 649: 154-159. DOI: 10.1016/J.Tsf.2018.01.031 |
0.388 |
|
2018 |
Schulte KL, Simon J, Ptak AJ. Multijunction Ga0.5In0.5P/GaAs solar cells grown by dynamic hydride vapor phase epitaxy Progress in Photovoltaics. 26: 887-893. DOI: 10.1002/Pip.3027 |
0.401 |
|
2017 |
Schulte KL, Simon J, Mangum J, Packard CE, Gorman BP, Jain N, Ptak AJ. Development of GaInP Solar Cells Grown by Hydride Vapor Phase Epitaxy Ieee Journal of Photovoltaics. 7: 1153-1158. DOI: 10.1109/Jphotov.2017.2691659 |
0.453 |
|
2017 |
Schulte KL, Geisz JF. Highly Transparent Compositionally Graded Buffers for New Metamorphic Multijunction Solar Cell Designs Ieee Journal of Photovoltaics. 7: 347-353. DOI: 10.1109/Jphotov.2016.2619183 |
0.399 |
|
2017 |
Simon J, Schulte KL, Jain N, Johnston S, Young M, Young MR, Young DL, Ptak AJ. Upright and Inverted Single-Junction GaAs Solar Cells Grown by Hydride Vapor Phase Epitaxy Ieee Journal of Photovoltaics. 7: 157-161. DOI: 10.1109/Jphotov.2016.2614122 |
0.491 |
|
2017 |
Xiao C, Jiang C, Moseley J, Simon J, Schulte K, Ptak AJ, Johnston S, Gorman B, Al-Jassim M, Haegel NM, Moutinho H. Near-field transport imaging applied to photovoltaic materials Solar Energy. 153: 134-141. DOI: 10.1016/J.Solener.2017.05.056 |
0.31 |
|
2017 |
Schulte KL, McMahon WE, Norman AG, Guthrey HL, Geisz JF. Reduced dislocation density in GaxIn1–xP compositionally graded buffer layers through engineered glide plane switch Journal of Crystal Growth. 464: 20-27. DOI: 10.1016/J.Jcrysgro.2016.11.050 |
0.404 |
|
2016 |
Guan Y, Forghani K, Schulte KL, Babcock S, Mawst L, Kuech TF. Enhanced incorporation of p into tensile-strained GaAs1-yPy layers grown by metal-organic vapor phase epitaxy at very low temperatures Ecs Journal of Solid State Science and Technology. 5: P183-P189. DOI: 10.1149/2.0181603Jss |
0.562 |
|
2016 |
Sweet CA, Schulte KL, Simon JD, Steiner MA, Jain N, Young DL, Ptak AJ, Packard CE. Controlled exfoliation of (100) GaAs-based devices by spalling fracture Applied Physics Letters. 108. DOI: 10.1063/1.4939661 |
0.384 |
|
2016 |
Schulte KL, Simon J, Roy A, Reedy RC, Young DL, Kuech TF, Ptak AJ. Computational fluid dynamics-aided analysis of a hydride vapor phase epitaxy reactor Journal of Crystal Growth. 434: 138-147. DOI: 10.1016/J.Jcrysgro.2015.10.033 |
0.569 |
|
2015 |
Chang CC, Kirch JD, Boyle C, Sigler C, Mawst LJ, Botez D, Zutter B, Buelow P, Schulte K, Kuech T, Earles T. Planarized process for resonant leaky-wave coupled phase-locked arrays of mid-IR quantum cascade lasers Proceedings of Spie - the International Society For Optical Engineering. 9382. DOI: 10.1117/12.2075667 |
0.522 |
|
2015 |
Mawst LJ, Rajeev A, Kirch JD, Kim TW, Botez D, Zutter B, Buelow P, Schulte K, Kuech TF, Wood A, Babcock SE, Earles T. Quantum-cascade-laser active regions on metamorphic buffer layers Proceedings of Spie - the International Society For Optical Engineering. 9370. DOI: 10.1117/12.2075457 |
0.579 |
|
2015 |
Simon J, Schulte KL, Young DL, Ptak AJ. Low cost GaAs solar cells grown by hydride vapor phase epitaxy and the development of GaInP cladding layers 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7355956 |
0.391 |
|
2015 |
Simon J, Schulte KL, Young DL, Haegel NM, Ptak AJ. GaAs Solar Cells Grown by Hydride Vapor-Phase Epitaxy and the Development of GaInP Cladding Layers Ieee Journal of Photovoltaics. DOI: 10.1109/JPHOTOV.2015.2501723 |
0.37 |
|
2015 |
Schulte KL, Strand MT, Kuech TF. Evolution of epilayer tilt in thick In<inf>x</inf>Ga<inf>1-x</inf>As metamorphic buffer layers grown by hydride vapor phase epitaxy Journal of Crystal Growth. 426: 283-286. DOI: 10.1016/J.Jcrysgro.2015.05.009 |
0.586 |
|
2014 |
Schulte K, Kuech T. Evolution of Epilayer Tilt in InGaAs Metamorphic Buffer Layers Grown by HVPE Acta Crystallographica Section a Foundations and Advances. 70: C235-C235. DOI: 10.1107/S2053273314097642 |
0.565 |
|
2014 |
Schulte KL, Zutter BT, Wood AW, Babcock SE, Kuech TF. Design and characterization of thick InxGa1-xAs metamorphic buffer layers grown by hydride vapor phase epitaxy Semiconductor Science and Technology. 29. DOI: 10.1088/0268-1242/29/3/035013 |
0.584 |
|
2014 |
Schulte KL, Kuech TF. A model for arsenic anti-site incorporation in GaAs grown by hydride vapor phase epitaxy Journal of Applied Physics. 116: 243504. DOI: 10.1063/1.4904745 |
0.602 |
|
2014 |
Mawst LJ, Kirch JD, Kim T, Garrod T, Boyle C, Botez D, Zutter B, Schulte K, Kuech TF, Bouzi PM, Gmachl CF, Earles T. Low-strain, quantum-cascade-laser active regions grown on metamorphic buffer layers for emission in the 3.0-4.0 μm wavelength region Iet Optoelectronics. 8: 25-32. DOI: 10.1049/Iet-Opt.2013.0060 |
0.6 |
|
2014 |
Zutter BT, Schulte KL, Kim TW, Mawst LJ, Kuech TF, Foran B, Sin Y. Planarization and processing of metamorphic buffer layers grown by hydride vapor-phase epitaxy Journal of Electronic Materials. 43: 873-878. DOI: 10.1007/S11664-013-2839-X |
0.607 |
|
2014 |
Yao M, Rawlings JB, Schulte KL, Kuech TF. Modeling and analysis of rapid synthesis of GaAs by hydride vapor phase epitaxy process Materials Engineering and Sciences Division 2014 - Core Programming Area At the 2014 Aiche Annual Meeting. 23-41. |
0.484 |
|
2013 |
Schulte KL, Wood AW, Reedy RC, Ptak AJ, Meyer NT, Babcock SE, Kuech TF. Heteroepitaxy of GaAs on (001)→ 6° Ge substrates at high growth rates by hydride vapor phase epitaxy Journal of Applied Physics. 113. DOI: 10.1063/1.4803037 |
0.604 |
|
2013 |
Schulte KL, Garrodb TJ, Kim TW, Kirch J, Ruder S, Mawst LJ, Kuech TF. Metalorganic vapor phase growth of quantum well structures on thick metamorphic buffer layers grown by hydride vapor phase epitaxy Journal of Crystal Growth. 370: 293-298. DOI: 10.1016/J.Jcrysgro.2012.08.053 |
0.617 |
|
2012 |
Schulte KL, Rance WL, Reedy RC, Ptak AJ, Young DL, Kuech TF. Controlled formation of GaAs pn junctions during hydride vapor phase epitaxy of GaAs Journal of Crystal Growth. 352: 253-257. DOI: 10.1016/J.Jcrysgro.2011.11.013 |
0.62 |
|
2010 |
Schulte KL, DeSario PA, Gray KA. Effect of crystal phase composition on the reductive and oxidative abilities of TiO2 nanotubes under UV and visible light Applied Catalysis B: Environmental. 97: 354-360. DOI: 10.1016/J.Apcatb.2010.04.017 |
0.357 |
|
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