Jeffrey J. Siddiqui, Ph.D. - Publications
Affiliations: | 2012 | University of Michigan, Ann Arbor, Ann Arbor, MI |
Area:
Electronics and Electrical EngineeringYear | Citation | Score | |||
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2012 | Siddiqui JJ, Phillips JD, Leedy K, Bayraktaroglu B. Illumination instabilities in ZnO/HfO 2 thin-film transistors and influence of grain boundary charge Journal of Materials Research. 27: 2199-2204. DOI: 10.1557/Jmr.2012.173 | 0.565 | |||
2012 | Siddiqui JJ, Phillips JD, Leedy K, Bayraktaroglu B. Bias-temperature-stress characteristics of ZnO/HfO 2 thin-film transistors Ieee Transactions On Electron Devices. 59: 1488-1493. DOI: 10.1109/Ted.2012.2189048 | 0.513 | |||
2012 | Siddiqui JJ, Phillips JD, Leedy K, Bayraktaroglu B. Illumination instability analysis of ZnO thin film transistors with HfO 2 gate dielectrics Device Research Conference - Conference Digest, Drc. 51-52. DOI: 10.1109/DRC.2012.6256994 | 0.36 | |||
2011 | Siddiqui JJ, Phillips JD, Leedy K, Bayraktaroglu B. Admittance spectroscopy of interface states in ZnO/HfO |
0.532 | |||
2011 | Siddiqui JJ, Phillips JD, Leedy K, Bayraktaroglu B. Bias temperature stress analysis of ZnO thin film transistors with HfO 2 gate dielectrics Device Research Conference - Conference Digest, Drc. 75-76. DOI: 10.1109/DRC.2011.5994419 | 0.41 | |||
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