Jinyoung Hwang, Ph.D. - Publications
Affiliations: | 2013 | Electrical Engineering | University of Michigan, Ann Arbor, Ann Arbor, MI |
Area:
Electronics and Electrical Engineering, Alternative EnergyYear | Citation | Score | |||
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2017 | Ramiro I, Antolin E, Hwang J, Teran A, Martin AJ, Linares PG, Millunchick J, Phillips J, Marti A, Luque A. Three-Bandgap Absolute Quantum Efficiency in GaSb/GaAs Quantum Dot Intermediate Band Solar Cells Ieee Journal of Photovoltaics. 7: 508-512. DOI: 10.1109/Jphotov.2016.2637658 | 0.58 | |||
2017 | Ramiro I, Villa J, Tablero C, Antolín E, Luque A, Martí A, Hwang J, Phillips J, Martin AJ, Millunchick J. Analysis of the intermediate-band absorption properties of type-II GaSb/GaAs quantum-dot photovoltaics Physical Review B. 96: 125422. DOI: 10.1103/Physrevb.96.125422 | 0.563 | |||
2014 | Hwang J, Lee K, Teran A, Forrest S, Phillips JD, Martin AJ, Millunchick J. Multiphoton Sub-Band-Gap Photoconductivity and Critical Transition Temperature in Type-II GaSb Quantum-Dot Intermediate-Band Solar Cells Physical Review Applied. 1. DOI: 10.1103/Physrevapplied.1.051003 | 0.563 | |||
2013 | Martin AJ, Hwang J, Marquis EA, Smakman E, Saucer TW, Rodriguez GV, Hunter AH, Sih V, Koenraad PM, Phillips JD, Millunchick J. The disintegration of GaSb/GaAs nanostructures upon capping Applied Physics Letters. 102. DOI: 10.1063/1.4796036 | 0.564 | |||
2012 | Hwang J, Martin AJ, Millunchick JM, Phillips JD. Thermal emission in type-II GaSb/GaAs quantum dots and prospects for intermediate band solar energy conversion Journal of Applied Physics. 111: 74514. DOI: 10.1063/1.3703467 | 0.579 | |||
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