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Lining Zhang, Ph.D. - Publications

Affiliations: 
2013 Electronic and Computer Engineering Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 
Area:
Electronics and Electrical Engineering, Computer Engineering
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87 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2023 Zhang L, Chan M. Editorial: Hardware implementation of spike-based neuromorphic computing and its design methodologies. Frontiers in Neuroscience. 16: 1113983. PMID 36685232 DOI: 10.3389/fnins.2022.1113983  0.381
2021 Ding F, Dong D, Chen Y, Lin X, Zhang L. Robust Simulations of Nanoscale Phase Change Memory: Dynamics and Retention. Nanomaterials (Basel, Switzerland). 11. PMID 34835708 DOI: 10.3390/nano11112945  0.434
2020 Hu H, Liu D, Chen X, Dong D, Cui X, Liu M, Lin X, Zhang L, Chan M. A Compact Phase Change Memory Model With Dynamic State Variables Ieee Transactions On Electron Devices. 67: 133-139. DOI: 10.1109/Ted.2019.2956193  0.612
2020 Rong Z, Cai W, Zhang Y, Wu P, Li X, Zhang L. On the Enhanced Miller Capacitance of Source-Gated Thin Film Transistors Ieee Electron Device Letters. 41: 741-744. DOI: 10.1109/Led.2020.2980030  0.409
2020 Ahmed Z, Shi Q, Ma Z, Zhang L, Guo H, Chan M. Analytical Monolayer MoS 2 MOSFET Modeling Verified by First Principle Simulations Ieee Electron Device Letters. 41: 171-174. DOI: 10.1109/Led.2019.2952382  0.608
2020 Chen X, Hu H, Huang X, Cai W, Liu M, Lam C, Lin X, Zhang L, Chan M. A SPICE Model of Phase Change Memory for Neuromorphic Circuits Ieee Access. 8: 95278-95287. DOI: 10.1109/Access.2020.2995907  0.631
2019 Xiao Y, Ahmed Z, Ma Z, Zhou C, Zhang L, Chan M. Low Temperature Synthesis of High-Density Carbon Nanotubes on Insulating Substrate. Nanomaterials (Basel, Switzerland). 9. PMID 30901961 DOI: 10.3390/Nano9030473  0.467
2019 Zhang L, Ma C, Xiao Y, Zhang H, Lin X, Chan M. A Dynamic Time Evolution Method for Concurrent Device-Circuit Aging Simulations Ieee Transactions On Electron Devices. 66: 184-190. DOI: 10.1109/Ted.2018.2882832  0.629
2019 Zhang L, Wang L, Wu W, Chan M. Modeling Current–Voltage Characteristics of Bilayer Organic Light-Emitting Diodes Ieee Transactions On Electron Devices. 66: 139-145. DOI: 10.1109/Ted.2018.2843681  0.548
2019 Su Y, Geng D, Gong Y, Yang G, Chuai X, Zhao Y, Shi X, Zhang L, Lu N, Li L, Liu M. Dynamic Time Evolutionary Aging Analysis for Device-Circuit Lifetime Estimation of Thin-Film Transistors Ieee Electron Device Letters. 40: 1439-1442. DOI: 10.1109/Led.2019.2927519  0.339
2019 Zhang J, Zhang M, Du C, Zhang S, Liao Z, Rong Z, Zhang L. Design and Mechanism of Embedding Specific Carbon Nanotubes in Sputtered Sandwiched InGaZnO Thin-Film Transistors Ieee Electron Device Letters. 40: 407-410. DOI: 10.1109/Led.2019.2892534  0.34
2019 Ma Z, Prawoto C, Ahmed Z, Xiao Y, Zhang L, Zhou C, Chan M. Control of hexagonal boron nitride dielectric thickness by single layer etching Journal of Materials Chemistry C. 7: 6273-6278. DOI: 10.1039/C9Tc00896A  0.47
2018 Zhang X, Zhang L, Ahmed Z, Chan M. Origin of Nonideal Graphene-Silicon Schottky Junction Ieee Transactions On Electron Devices. 65: 1995-2002. DOI: 10.1109/Ted.2018.2812200  0.508
2018 Zhang L, Song D, Xiao Y, Lin X, Chan M. On the Formulation of Self-Heating Models for Circuit Simulation Ieee Journal of the Electron Devices Society. 6: 291-297. DOI: 10.1109/Jeds.2018.2801301  0.601
2018 Wu X, Ma C, Gao S, Li X, Sun F, Zhang L, Lin X. Model of NBTI combined with mobility degradation Journal of Semiconductors. 39: 124015. DOI: 10.1088/1674-4926/39/12/124015  0.376
2018 Kabir HMD, Ahmed Z, Kariyadan R, Zhang L, Chan M. Circular Electrodes to Reduce the Current Variation of OTFTS With the Drop-casted Semiconducting Layer Solid-State Electronics. 144: 49-53. DOI: 10.1016/J.Sse.2018.02.017  0.52
2017 Xu P, Lou H, Zhang L, Yu Z, Lin X. Compact Model for Double-Gate Tunnel FETs With Gate–Drain Underlap Ieee Transactions On Electron Devices. 64: 5242-5248. DOI: 10.1109/Ted.2017.2762861  0.622
2017 Kabir HMD, Ahmed Z, Zhang L, Chan M. Coil-Shaped Electrodes to Reduce the Current Variation of Drop-Casted OTFTs Ieee Electron Device Letters. 38: 645-648. DOI: 10.1109/Led.2017.2679201  0.523
2017 Wang P, Chen Y, Li S, Raju S, Wang L, Zhang L, Lin X, Song Z, Chan M. Low Power Phase Change Memory With Vertical Carbon Nanotube Electrode Ieee Journal of the Electron Devices Society. 5: 362-366. DOI: 10.1109/Jeds.2017.2734858  0.591
2017 Wang L, Sun Y, Zhang X, Zhang L, Zhang S, Chan MS. Tunneling contact IGZO TFTs with reduced saturation voltages Applied Physics Letters. 110: 152105. DOI: 10.1063/1.4980131  0.356
2017 Zhang Z, Zhang Y, Li F, Zhao M, Zhang L, Yan S. Discriminative sparse flexible manifold embedding with novel graph for robust visual representation and label propagation Pattern Recognition. 61: 492-510. DOI: 10.1016/j.patcog.2016.07.042  0.337
2017 Qi Y, Yu H, Zhang J, Zhang L, He C, Lin X. A compact dual-wavelength Nd:LuVO4 laser with adjustable power-ratio between 1064 nm and 1342 nm lines by controlling polarization dependent loss Optics Communications. 382: 302-306. DOI: 10.1016/J.Optcom.2016.07.035  0.338
2017 Ren Y, Zhou B, Tao J, Cao J, Zhang Z, Wu C, Wang J, Li J, Zhang L, Han Y, Liu L, Cao C, Wang G. Composition and size distribution of airborne particulate PAHs and oxygenated PAHs in two Chinese megacities Atmospheric Research. 183: 322-330. DOI: 10.1016/j.atmosres.2016.09.015  0.309
2017 Zhang J, Li J, Mao Y, Bi J, Zhu M, Zhang Z, Zhang L, Zhang D. Effect of CaCO3 addition on ash sintering behaviour during K2CO3 catalysed steam gasification of a Chinese lignite Applied Thermal Engineering. 111: 503-509. DOI: 10.1016/j.applthermaleng.2016.09.111  0.345
2017 Zhang L, Chan M. Artificial neural network design for compact modeling of generic transistors Journal of Computational Electronics. 16: 825-832. DOI: 10.1007/S10825-017-0984-9  0.555
2016 Shen XJ, Sun JY, Zhang XY, Zhang YM, Zhang L, Fan RX, Zhang ZX, Zhang XL, Zhou HG, Zhou LY, Dong F, Shi QF. The influence of emission control on particle number size distribution and new particle formation during China's V-Day parade in 2015. The Science of the Total Environment. 573: 409-419. PMID 27572534 DOI: 10.1016/j.scitotenv.2016.08.085  0.33
2016 Lu Q, Li S, Zhang W, Zhang L. A genetic algorithm-based job scheduling model for big data analytics. Eurasip Journal On Wireless Communications and Networking. 2016: 152. PMID 27429611 DOI: 10.1186/s13638-016-0651-z  0.474
2016 Li Y, Zhang Q, Qi D, Zhang L, Yi L, Li Q, Zhang Z. Valproate ameliorates nitroglycerin-induced migraine in trigeminal nucleus caudalis in rats through inhibition of NF-кB. The Journal of Headache and Pain. 17: 49. PMID 27150105 DOI: 10.1186/s10194-016-0631-z  0.321
2016 Ma C, Zhang L, Lin X, Chan M. Universal framework for temperature dependence prediction of the negative bias temperature instability based on microscope pictures Japanese Journal of Applied Physics. 55. DOI: 10.7567/Jjap.55.044201  0.501
2016 Xiao Y, Lin X, Lou H, Zhang B, Zhang L, Chan M. A Short Channel Double-Gate Junctionless Transistor Model Including the Dynamic Channel Boundary Effect Ieee Transactions On Electron Devices. 63: 4661-4667. DOI: 10.1109/Ted.2016.2620240  0.654
2016 Dong Y, Zhang L, Li X, Lin X, Chan M. A Compact Model for Double-Gate Heterojunction Tunnel FETs Ieee Transactions On Electron Devices. 63: 4506-4513. DOI: 10.1109/Ted.2016.2604001  0.681
2016 Ahmed Z, Zhang L, Sarfraz K, Chan M. Modeling CNTFET Performance Variation Due to Spatial Distribution of Carbon Nanotubes Ieee Transactions On Electron Devices. 63: 3776-3781. DOI: 10.1109/Ted.2016.2586961  0.507
2016 Xiao Y, Zhang B, Lou H, Zhang L, Lin aX. A Compact Model of Subthreshold Current With Source/Drain Depletion Effect for the Short-Channel Junctionless Cylindrical Surrounding-Gate MOSFETs Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2016.2535247  0.46
2016 Lin X, Zhang B, Xiao Y, Lou H, Zhang L, Chan M. Analytical Current Model for Long-Channel Junctionless Double-Gate MOSFETs Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2016.2520558  0.631
2016 Gan Y, Zhang Q, Chen Y, Zhao Y, Xiong Z, Zhang L, Zhang W. Selective extraction of endogenous peptides from human serum with magnetic mesoporous carbon composites Talanta. 161: 647-654. DOI: 10.1016/j.talanta.2016.09.005  0.441
2016 Zhang L, Chen L, Liu J, Fang X, Zhang Z. Effect of morphology of carbon nanomaterials on thermo-physical characteristics, optical properties and photo-thermal conversion performance of nanofluids Renewable Energy. 99: 888-897. DOI: 10.1016/j.renene.2016.07.073  0.355
2016 Sun Z, Zhang LX, Zhang ZH, Hao TD, Feng JC. Microstructure and mechanical response of the SiO2f/SiO2 composite and Invar alloy joints brazed with an AgCuTi alloy Materials and Design. 111: 239-247. DOI: 10.1016/j.matdes.2016.08.075  0.325
2016 Li L, Zhang L, Zhang Z, Liu J. Comparison of heat resistance and application potential of two lipid-rich Isochrysis galbana strains Algal Research. 20: 1-6. DOI: 10.1016/j.algal.2016.09.002  0.322
2015 Ahmed Z, Zhang L, Chan M. Gate Capacitance Model for Aligned Carbon Nanotube FETs With Arbitrary CNT Spacing Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2015.2484384  0.562
2015 Li D, Zhang B, Lou H, Zhang L, Lin X, Chan M. Comparative Analysis of Carrier Statistics on MOSFET and Tunneling FET Characteristics Ieee Journal of the Electron Devices Society. 3: 447-451. DOI: 10.1109/Jeds.2015.2475163  0.665
2015 Sun Y, Zhang L, Ahmed Z, Chan M. Characterization of interface trap dynamics responsible for hysteresis in organic thin-film transistors Organic Electronics: Physics, Materials, Applications. 27: 192-196. DOI: 10.1016/J.Orgel.2015.09.011  0.38
2015 Wang T, Zhang Z, Jing X, Zhang L. Multiple kernel ensemble learning for software defect prediction Automated Software Engineering. DOI: 10.1007/s10515-015-0179-1  0.306
2014 Zhang A, Zhang L, Tang Z, Cheng X, Wang Y, Chen KJ, Chan M. Analytical Modeling of Capacitances for GaN HEMTs, Including Parasitic Components Ieee Transactions On Electron Devices. 61: 755-761. DOI: 10.1109/Ted.2014.2298255  0.607
2014 Huang JZ, Zhang L, Chew WC, Yam CY, Jiang LJ, Chen GH, Chan M. Model order reduction for quantum transport simulation of band-to-band tunneling devices Ieee Transactions On Electron Devices. 61: 561-568. DOI: 10.1109/Ted.2013.2295983  0.563
2014 Zhang L, Chan M. SPICE Modeling of Double-Gate Tunnel-FETs Including Channel Transports Ieee Transactions On Electron Devices. 61: 300-307. DOI: 10.1109/Ted.2013.2295237  0.589
2013 He J, Xu Y, Chen L, Zhang L, Zhou X, Ma C, Cao Y, Ye Y, Wang C, Liang H, Chan MS. Numerical Electron Mobility Model of Nanoscale Symmetric, Asymmetric and Independent Double-Gate MOSFETs Journal of Computational and Theoretical Nanoscience. 10: 763-771. DOI: 10.1166/Jctn.2013.2767  0.368
2013 Zhang L, He J, Chen Q, Ma Y, Wang R, Ma Y, Zhao W, Chan M, Chen A. A Nonlinear Poisson-Schrodinger Solver Under Cylindrical Coordinate for Quantum Effect in Nanowire MOSFET Journal of Computational and Theoretical Nanoscience. 10: 73-77. DOI: 10.1166/Jctn.2013.2660  0.465
2013 Zhang L, Zahid F, Zhu Y, Liu L, Wang J, Guo H, Chan PCH, Chan M. First Principles simulations of nanoscale silicon devices with uniaxial strain Ieee Transactions On Electron Devices. 60: 3527-3533. DOI: 10.1109/Ted.2013.2275231  0.549
2013 Zhang L, Mei J, Zhang X, Tao J, Hu Y, He J, Chan M. A Comparative Study of Ballistic Transport Models for Nanowire MOSFETs Chinese Physics Letters. 30: 117102-117102. DOI: 10.1088/0256-307X/30/11/117102  0.554
2012 Zhang L, Wang S, Ma C, He J, Xu C, Ma Y, Ye Y, Liang H, Chen Q, Chan M. Gate underlap design for short channel effects control in cylindrical gate-all-around MOSFETs based on an analytical model Iete Technical Review. 29: 29-35. DOI: 10.4103/0256-4602.93125  0.611
2012 Zhang L, Lin X, He J, Chan M. An Analytical Charge Model for Double-Gate Tunnel FETs Ieee Transactions On Electron Devices. 59: 3217-3223. DOI: 10.1109/Ted.2012.2217145  0.677
2012 Zhou X, Liu F, Zhang L, Wang C, He J, Zhang X, Chan M. Unified Scale Length for Four-Terminal Double-Gate MOSFETs Ieee Transactions On Electron Devices. 59: 1997-1999. DOI: 10.1109/Ted.2012.2196520  0.58
2012 Lou H, Zhang L, Zhu Y, Lin X, Yang S, He J, Chan M. A Junctionless Nanowire Transistor With a Dual-Material Gate Ieee Transactions On Electron Devices. 59: 1829-1836. DOI: 10.1109/Ted.2012.2192499  0.638
2012 Li L, Zhang L, Lin X, He J, Chui CO, Chan M. Phase-change memory with multifin thin-film-transistor driver technology Ieee Electron Device Letters. 33: 405-407. DOI: 10.1109/Led.2011.2181480  0.595
2012 Zhang J, He J, Zhou X, Zhang L, Ma Y, Chen Q, Zhang X, Yang Z, Wang R, Han Y, Chan M. A unified charge-based model for SOI MOSFETs applicable from intrinsic to heavily doped channel Chinese Physics B. 21: 47303. DOI: 10.1088/1674-1056/21/4/047303  0.612
2011 Zhou W, Zhang L, Chen L, Xu Y, Wu W, He J. Simulation study on a new dual-material nanowire MOS surrounding-gate transistor. Journal of Nanoscience and Nanotechnology. 11: 11006-10. PMID 22409044 DOI: 10.1166/Jnn.2011.3962  0.44
2011 Zhang L, Zhou X, Xu Y, Chen L, Zhou W, Wang W, He J, Chan M. A unified drain current model for nanoscale double-gate and surrounding-gate MOSFETs incorporating velocity saturation. Journal of Nanoscience and Nanotechnology. 11: 10480-4. PMID 22408930 DOI: 10.1166/Jnn.2011.3983  0.629
2011 Zhang X, He J, Zhang L, Zhang J, Ma Y, Wu W, Wang W, Wang R, Gu X, Chan M. A rigorous and concise surface potential-based core model for the undoped symmetric double-gate metal-oxide-semiconductor field effect transistors Journal of Computational and Theoretical Nanoscience. 8: 1857-1862. DOI: 10.1166/Jctn.2011.1893  0.542
2011 Shi M, He J, Zhang L, Zhang J, Liu Z, Wu W, Wang W, Ma Y, Zhang X, Zhuang H. A Physics Based Yet Computation Efficient Core Model for Undoped Surrounding-Gate MOSFET Current-Voltage and Capacitance-Voltage Characteristics Prediction Journal of Computational and Theoretical Nanoscience. 8: 1732-1738. DOI: 10.1166/Jctn.2011.1875  0.383
2011 Shi M, He J, Liu Z, Wang W, Zhao W, Wang R, Wu W, Ma Y, Zhang D, Bian W, Chan M, Zhang X, Zhang L. 3-D Numerical Simulation Study on 20 nm NMOSFET Design Journal of Computational and Theoretical Nanoscience. 8: 1498-1501. DOI: 10.1166/Jctn.2011.1841  0.49
2011 He J, Shi M, Zhang L, Zhang J, Liu C, Zhuang H, Chan M. Computation Efficient yet Accurate Surface Potential Based Analytic Model for Symmetric DG MOSFETs to Predict Current-Voltage Characteristics Journal of Computational and Theoretical Nanoscience. 8: 1548-1551. DOI: 10.1166/Jctn.2011.1827  0.608
2011 Zhang L, Lou H, He J, Chan M. Uniaxial Strain Effects on Electron Ballistic Transport in Gate-All-Around Silicon Nanowire MOSFETs Ieee Transactions On Electron Devices. 58: 3829-3836. DOI: 10.1109/Ted.2011.2165215  0.497
2011 Zhang L, Li L, He J, Chan M. Modeling Short-Channel Effect of Elliptical Gate-All-Around MOSFET by Effective Radius Ieee Electron Device Letters. 32: 1188-1190. DOI: 10.1109/Led.2011.2159358  0.594
2011 Shi M, He J, Zhang L, Ma C, Zhou X, Lou H, Zhuang H, Wang R, Li Y, Ma Y, Wu W, Wang W, Chan M. Zero-Mask Contact Fuse for One-Time-Programmable Memory in Standard CMOS Processes Ieee Electron Device Letters. 32: 955-957. DOI: 10.1109/Led.2011.2147754  0.522
2011 Ma C, Zhang L, Zhang C, Zhang X, He J, Zhang X. A physical based model to predict performance degradation of FinFET accounting for interface state distribution effect due to hot carrier injection Microelectronics Reliability. 51: 337-341. DOI: 10.1016/J.Microrel.2010.08.023  0.386
2010 Fu Y, Zhang L, Zhou X, He J. Extended Version of Carrier-Based Analytical Model to Account for the Doped Effect of Symmetric Double-Gate MOSFETs Journal of Computational and Theoretical Nanoscience. 7: 627-633. DOI: 10.1166/Jctn.2010.1405  0.441
2010 Li Y, Liou JJ, Vinson JE, Zhang L. Investigation of LOCOS- and polysilicon-bound diodes for robust electrostatic discharge (ESD) applications Ieee Transactions On Electron Devices. 57: 814-819. DOI: 10.1109/Ted.2009.2039964  0.343
2010 Zhang J, Zhang L, He J, Chan M. A noncharge-sheet channel potential and drain current model for dynamic-depletion silicon-on-insulator metal-oxide-semiconductor field-effect transistors Journal of Applied Physics. 107: 54507. DOI: 10.1063/1.3319656  0.614
2010 Zhou X, Zhou Z, Zhang J, Zhang L, Ma C, He J, Zhang X. Comparison and improvement of two core compact models for double-gate MOSFETs Solid-State Electronics. 54: 1444-1446. DOI: 10.1016/J.Sse.2010.06.020  0.396
2010 Zhang L, Ma C, He J, Lin X, Chan M. Analytical solution of subthreshold channel potential of gate underlap cylindrical gate-all-around MOSFET Solid-State Electronics. 54: 806-808. DOI: 10.1016/J.Sse.2010.03.020  0.603
2010 Wang Y, Yan Z, Zhu J, Zhang L, Lin X, He J, Cao J, Chan M. A generic numerical model for detection of terahertz radiation in MOS field-effect transistors Solid-State Electronics. 54: 791-795. DOI: 10.1016/J.Sse.2010.03.009  0.575
2010 Zhang L, Zhang J, Song Y, Lin X, He J, Chan M. Charge-based model for symmetric double-gate MOSFETs with inclusion of channel doping effect Microelectronics Reliability. 50: 1062-1070. DOI: 10.1016/J.Microrel.2010.04.005  0.68
2010 Zhang L, Ma C, He J, Lin X, Chan M. Analytical solution of subthreshold channel potential of gate underlap cylindrical gate-all-around MOSFET Journal of End-to-End-Testing. DOI: 10.1016/J.Endend.2010.06.030  0.556
2009 Chen Y, He J, Wang Y, Lin X, Zhang L, Chan M. Terahertz Wave Generation and Detection Analysis of Silicon Nanowire MOS Field-Effect Transistor Iete Technical Review. 26: 430-439. DOI: 10.4103/0256-4602.57828  0.513
2009 Liu F, Zhang L, Zhang J, He J, Chan M. Effects of body doping on threshold voltage and channel potential of symmetric DG MOSFETs with continuous solution from accumulation to strong-inversion regions Semiconductor Science and Technology. 24: 85005. DOI: 10.1088/0268-1242/24/8/085005  0.588
2009 Zhang L, Guan Y, Zhou W, Chen L, Xu Y, He J. A carrier-based analytic drain current model incorporating velocity saturation for undoped surrounding-gate MOSFETs Semiconductor Science and Technology. 24: 115003. DOI: 10.1088/0268-1242/24/11/115003  0.461
2009 He J, Zhang L, Zhang J, Ma C, Liu F, Chan M. A complete analytic surface potential-based core model for intrinsic nanowire surrounding-gate MOSFETs Molecular Simulation. 35: 483-490. DOI: 10.1080/08927020802706995  0.599
2009 He J, Zhang L, Zheng R, Zhang J, Chan M. A continuous surface-potential solution from accumulation to inversion for intrinsic symmetric double-gate MOSFETs Molecular Simulation. 35: 448-455. DOI: 10.1080/08927020802609454  0.563
2009 Zhang L, He J. Charge-based model enhancement for undoped surrounding-gate MOSFETs Electronics Letters. 45: 569-570. DOI: 10.1049/El.2009.0424  0.397
2009 Liu F, Zhang J, He F, Liu F, Zhang L, Chan M. A charge-based compact model for predicting the current–voltage and capacitance–voltage characteristics of heavily doped cylindrical surrounding-gate MOSFETs Solid-State Electronics. 53: 49-53. DOI: 10.1016/J.Sse.2008.09.016  0.587
2009 Bian W, He J, Zhang L, Zhang J, Chan M. Sub-threshold behavior of long channel undoped cylindrical surrounding-gate MOSFETs Microelectronics Reliability. 49: 897-903. DOI: 10.1016/J.Microrel.2009.05.008  0.578
2008 Liu F, He J, Zhang L, Zhang J, Hu J, Ma C, Chan M. A Charge-Based Model for Long-Channel Cylindrical Surrounding-Gate MOSFETs From Intrinsic Channel to Heavily Doped Body Ieee Transactions On Electron Devices. 55: 2187-2194. DOI: 10.1109/Ted.2008.926735  0.607
2008 Zhang L, He J, Zhang J, Liu F, Fu Y, Song Y, Zhang X. An Analytic Model for Nanowire MOSFETs With Ge/Si Core/Shell Structure Ieee Transactions On Electron Devices. 55: 2907-2917. DOI: 10.1109/Ted.2008.2007417  0.439
2008 Yang J, He J, Liu F, Zhang L, Liu F, Zhang X, Chan M. A Compact Model of Silicon-Based Nanowire MOSFETs for Circuit Simulation and Design Ieee Transactions On Electron Devices. 55: 2898-2906. DOI: 10.1109/Ted.2008.2005184  0.639
2008 Ma C, Li B, Wei Y, Zhang L, He J, Zhang X, Lin X, Chan M. FinFET reliability study by forward gated-diode generation–recombination current Semiconductor Science and Technology. 23: 75008. DOI: 10.1088/0268-1242/23/7/075008  0.622
2008 He J, Bian W, Chen Y, Wei Y, Zhang L, Zhang J, Chan M. A rigorous carrier-based analytic model for undoped ultra-thin-body silicon-on-insulator (UTB-SOI) MOSFETs Molecular Simulation. 34: 63-72. DOI: 10.1080/08927020701730393  0.635
2007 He J, Zhang L, Zhang J, Fu Y, Zheng R, Chan M. A unified carrier-based model for undoped symmetric double-gate and surrounding-gate MOSFETs Semiconductor Science and Technology. 22: 1312-1316. DOI: 10.1088/0268-1242/22/12/013  0.608
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