Year |
Citation |
Score |
2023 |
Zhang L, Chan M. Editorial: Hardware implementation of spike-based neuromorphic computing and its design methodologies. Frontiers in Neuroscience. 16: 1113983. PMID 36685232 DOI: 10.3389/fnins.2022.1113983 |
0.381 |
|
2021 |
Ding F, Dong D, Chen Y, Lin X, Zhang L. Robust Simulations of Nanoscale Phase Change Memory: Dynamics and Retention. Nanomaterials (Basel, Switzerland). 11. PMID 34835708 DOI: 10.3390/nano11112945 |
0.434 |
|
2020 |
Hu H, Liu D, Chen X, Dong D, Cui X, Liu M, Lin X, Zhang L, Chan M. A Compact Phase Change Memory Model With Dynamic State Variables Ieee Transactions On Electron Devices. 67: 133-139. DOI: 10.1109/Ted.2019.2956193 |
0.612 |
|
2020 |
Rong Z, Cai W, Zhang Y, Wu P, Li X, Zhang L. On the Enhanced Miller Capacitance of Source-Gated Thin Film Transistors Ieee Electron Device Letters. 41: 741-744. DOI: 10.1109/Led.2020.2980030 |
0.409 |
|
2020 |
Ahmed Z, Shi Q, Ma Z, Zhang L, Guo H, Chan M. Analytical Monolayer MoS 2 MOSFET Modeling Verified by First Principle Simulations Ieee Electron Device Letters. 41: 171-174. DOI: 10.1109/Led.2019.2952382 |
0.608 |
|
2020 |
Chen X, Hu H, Huang X, Cai W, Liu M, Lam C, Lin X, Zhang L, Chan M. A SPICE Model of Phase Change Memory for Neuromorphic Circuits Ieee Access. 8: 95278-95287. DOI: 10.1109/Access.2020.2995907 |
0.631 |
|
2019 |
Xiao Y, Ahmed Z, Ma Z, Zhou C, Zhang L, Chan M. Low Temperature Synthesis of High-Density Carbon Nanotubes on Insulating Substrate. Nanomaterials (Basel, Switzerland). 9. PMID 30901961 DOI: 10.3390/Nano9030473 |
0.467 |
|
2019 |
Zhang L, Ma C, Xiao Y, Zhang H, Lin X, Chan M. A Dynamic Time Evolution Method for Concurrent Device-Circuit Aging Simulations Ieee Transactions On Electron Devices. 66: 184-190. DOI: 10.1109/Ted.2018.2882832 |
0.629 |
|
2019 |
Zhang L, Wang L, Wu W, Chan M. Modeling Current–Voltage Characteristics of Bilayer Organic Light-Emitting Diodes Ieee Transactions On Electron Devices. 66: 139-145. DOI: 10.1109/Ted.2018.2843681 |
0.548 |
|
2019 |
Su Y, Geng D, Gong Y, Yang G, Chuai X, Zhao Y, Shi X, Zhang L, Lu N, Li L, Liu M. Dynamic Time Evolutionary Aging Analysis for Device-Circuit Lifetime Estimation of Thin-Film Transistors Ieee Electron Device Letters. 40: 1439-1442. DOI: 10.1109/Led.2019.2927519 |
0.339 |
|
2019 |
Zhang J, Zhang M, Du C, Zhang S, Liao Z, Rong Z, Zhang L. Design and Mechanism of Embedding Specific Carbon Nanotubes in Sputtered Sandwiched InGaZnO Thin-Film Transistors Ieee Electron Device Letters. 40: 407-410. DOI: 10.1109/Led.2019.2892534 |
0.34 |
|
2019 |
Ma Z, Prawoto C, Ahmed Z, Xiao Y, Zhang L, Zhou C, Chan M. Control of hexagonal boron nitride dielectric thickness by single layer etching Journal of Materials Chemistry C. 7: 6273-6278. DOI: 10.1039/C9Tc00896A |
0.47 |
|
2018 |
Zhang X, Zhang L, Ahmed Z, Chan M. Origin of Nonideal Graphene-Silicon Schottky Junction Ieee Transactions On Electron Devices. 65: 1995-2002. DOI: 10.1109/Ted.2018.2812200 |
0.508 |
|
2018 |
Zhang L, Song D, Xiao Y, Lin X, Chan M. On the Formulation of Self-Heating Models for Circuit Simulation Ieee Journal of the Electron Devices Society. 6: 291-297. DOI: 10.1109/Jeds.2018.2801301 |
0.601 |
|
2018 |
Wu X, Ma C, Gao S, Li X, Sun F, Zhang L, Lin X. Model of NBTI combined with mobility degradation Journal of Semiconductors. 39: 124015. DOI: 10.1088/1674-4926/39/12/124015 |
0.376 |
|
2018 |
Kabir HMD, Ahmed Z, Kariyadan R, Zhang L, Chan M. Circular Electrodes to Reduce the Current Variation of OTFTS With the Drop-casted Semiconducting Layer Solid-State Electronics. 144: 49-53. DOI: 10.1016/J.Sse.2018.02.017 |
0.52 |
|
2017 |
Xu P, Lou H, Zhang L, Yu Z, Lin X. Compact Model for Double-Gate Tunnel FETs With Gate–Drain Underlap Ieee Transactions On Electron Devices. 64: 5242-5248. DOI: 10.1109/Ted.2017.2762861 |
0.622 |
|
2017 |
Kabir HMD, Ahmed Z, Zhang L, Chan M. Coil-Shaped Electrodes to Reduce the Current Variation of Drop-Casted OTFTs Ieee Electron Device Letters. 38: 645-648. DOI: 10.1109/Led.2017.2679201 |
0.523 |
|
2017 |
Wang P, Chen Y, Li S, Raju S, Wang L, Zhang L, Lin X, Song Z, Chan M. Low Power Phase Change Memory With Vertical Carbon Nanotube Electrode Ieee Journal of the Electron Devices Society. 5: 362-366. DOI: 10.1109/Jeds.2017.2734858 |
0.591 |
|
2017 |
Wang L, Sun Y, Zhang X, Zhang L, Zhang S, Chan MS. Tunneling contact IGZO TFTs with reduced saturation voltages Applied Physics Letters. 110: 152105. DOI: 10.1063/1.4980131 |
0.356 |
|
2017 |
Zhang Z, Zhang Y, Li F, Zhao M, Zhang L, Yan S. Discriminative sparse flexible manifold embedding with novel graph for robust visual representation and label propagation Pattern Recognition. 61: 492-510. DOI: 10.1016/j.patcog.2016.07.042 |
0.337 |
|
2017 |
Qi Y, Yu H, Zhang J, Zhang L, He C, Lin X. A compact dual-wavelength Nd:LuVO4 laser with adjustable power-ratio between 1064 nm and 1342 nm lines by controlling polarization dependent loss Optics Communications. 382: 302-306. DOI: 10.1016/J.Optcom.2016.07.035 |
0.338 |
|
2017 |
Ren Y, Zhou B, Tao J, Cao J, Zhang Z, Wu C, Wang J, Li J, Zhang L, Han Y, Liu L, Cao C, Wang G. Composition and size distribution of airborne particulate PAHs and oxygenated PAHs in two Chinese megacities Atmospheric Research. 183: 322-330. DOI: 10.1016/j.atmosres.2016.09.015 |
0.309 |
|
2017 |
Zhang J, Li J, Mao Y, Bi J, Zhu M, Zhang Z, Zhang L, Zhang D. Effect of CaCO3 addition on ash sintering behaviour during K2CO3 catalysed steam gasification of a Chinese lignite Applied Thermal Engineering. 111: 503-509. DOI: 10.1016/j.applthermaleng.2016.09.111 |
0.345 |
|
2017 |
Zhang L, Chan M. Artificial neural network design for compact modeling of generic transistors Journal of Computational Electronics. 16: 825-832. DOI: 10.1007/S10825-017-0984-9 |
0.555 |
|
2016 |
Shen XJ, Sun JY, Zhang XY, Zhang YM, Zhang L, Fan RX, Zhang ZX, Zhang XL, Zhou HG, Zhou LY, Dong F, Shi QF. The influence of emission control on particle number size distribution and new particle formation during China's V-Day parade in 2015. The Science of the Total Environment. 573: 409-419. PMID 27572534 DOI: 10.1016/j.scitotenv.2016.08.085 |
0.33 |
|
2016 |
Lu Q, Li S, Zhang W, Zhang L. A genetic algorithm-based job scheduling model for big data analytics. Eurasip Journal On Wireless Communications and Networking. 2016: 152. PMID 27429611 DOI: 10.1186/s13638-016-0651-z |
0.474 |
|
2016 |
Li Y, Zhang Q, Qi D, Zhang L, Yi L, Li Q, Zhang Z. Valproate ameliorates nitroglycerin-induced migraine in trigeminal nucleus caudalis in rats through inhibition of NF-кB. The Journal of Headache and Pain. 17: 49. PMID 27150105 DOI: 10.1186/s10194-016-0631-z |
0.321 |
|
2016 |
Ma C, Zhang L, Lin X, Chan M. Universal framework for temperature dependence prediction of the negative bias temperature instability based on microscope pictures Japanese Journal of Applied Physics. 55. DOI: 10.7567/Jjap.55.044201 |
0.501 |
|
2016 |
Xiao Y, Lin X, Lou H, Zhang B, Zhang L, Chan M. A Short Channel Double-Gate Junctionless Transistor Model Including the Dynamic Channel Boundary Effect Ieee Transactions On Electron Devices. 63: 4661-4667. DOI: 10.1109/Ted.2016.2620240 |
0.654 |
|
2016 |
Dong Y, Zhang L, Li X, Lin X, Chan M. A Compact Model for Double-Gate Heterojunction Tunnel FETs Ieee Transactions On Electron Devices. 63: 4506-4513. DOI: 10.1109/Ted.2016.2604001 |
0.681 |
|
2016 |
Ahmed Z, Zhang L, Sarfraz K, Chan M. Modeling CNTFET Performance Variation Due to Spatial Distribution of Carbon Nanotubes Ieee Transactions On Electron Devices. 63: 3776-3781. DOI: 10.1109/Ted.2016.2586961 |
0.507 |
|
2016 |
Xiao Y, Zhang B, Lou H, Zhang L, Lin aX. A Compact Model of Subthreshold Current With Source/Drain Depletion Effect for the Short-Channel Junctionless Cylindrical Surrounding-Gate MOSFETs Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2016.2535247 |
0.46 |
|
2016 |
Lin X, Zhang B, Xiao Y, Lou H, Zhang L, Chan M. Analytical Current Model for Long-Channel Junctionless Double-Gate MOSFETs Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2016.2520558 |
0.631 |
|
2016 |
Gan Y, Zhang Q, Chen Y, Zhao Y, Xiong Z, Zhang L, Zhang W. Selective extraction of endogenous peptides from human serum with magnetic mesoporous carbon composites Talanta. 161: 647-654. DOI: 10.1016/j.talanta.2016.09.005 |
0.441 |
|
2016 |
Zhang L, Chen L, Liu J, Fang X, Zhang Z. Effect of morphology of carbon nanomaterials on thermo-physical characteristics, optical properties and photo-thermal conversion performance of nanofluids Renewable Energy. 99: 888-897. DOI: 10.1016/j.renene.2016.07.073 |
0.355 |
|
2016 |
Sun Z, Zhang LX, Zhang ZH, Hao TD, Feng JC. Microstructure and mechanical response of the SiO2f/SiO2 composite and Invar alloy joints brazed with an AgCuTi alloy Materials and Design. 111: 239-247. DOI: 10.1016/j.matdes.2016.08.075 |
0.325 |
|
2016 |
Li L, Zhang L, Zhang Z, Liu J. Comparison of heat resistance and application potential of two lipid-rich Isochrysis galbana strains Algal Research. 20: 1-6. DOI: 10.1016/j.algal.2016.09.002 |
0.322 |
|
2015 |
Ahmed Z, Zhang L, Chan M. Gate Capacitance Model for Aligned Carbon Nanotube FETs With Arbitrary CNT Spacing Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2015.2484384 |
0.562 |
|
2015 |
Li D, Zhang B, Lou H, Zhang L, Lin X, Chan M. Comparative Analysis of Carrier Statistics on MOSFET and Tunneling FET Characteristics Ieee Journal of the Electron Devices Society. 3: 447-451. DOI: 10.1109/Jeds.2015.2475163 |
0.665 |
|
2015 |
Sun Y, Zhang L, Ahmed Z, Chan M. Characterization of interface trap dynamics responsible for hysteresis in organic thin-film transistors Organic Electronics: Physics, Materials, Applications. 27: 192-196. DOI: 10.1016/J.Orgel.2015.09.011 |
0.38 |
|
2015 |
Wang T, Zhang Z, Jing X, Zhang L. Multiple kernel ensemble learning for software defect prediction Automated Software Engineering. DOI: 10.1007/s10515-015-0179-1 |
0.306 |
|
2014 |
Zhang A, Zhang L, Tang Z, Cheng X, Wang Y, Chen KJ, Chan M. Analytical Modeling of Capacitances for GaN HEMTs, Including Parasitic Components Ieee Transactions On Electron Devices. 61: 755-761. DOI: 10.1109/Ted.2014.2298255 |
0.607 |
|
2014 |
Huang JZ, Zhang L, Chew WC, Yam CY, Jiang LJ, Chen GH, Chan M. Model order reduction for quantum transport simulation of band-to-band tunneling devices Ieee Transactions On Electron Devices. 61: 561-568. DOI: 10.1109/Ted.2013.2295983 |
0.563 |
|
2014 |
Zhang L, Chan M. SPICE Modeling of Double-Gate Tunnel-FETs Including Channel Transports Ieee Transactions On Electron Devices. 61: 300-307. DOI: 10.1109/Ted.2013.2295237 |
0.589 |
|
2013 |
He J, Xu Y, Chen L, Zhang L, Zhou X, Ma C, Cao Y, Ye Y, Wang C, Liang H, Chan MS. Numerical Electron Mobility Model of Nanoscale Symmetric, Asymmetric and Independent Double-Gate MOSFETs Journal of Computational and Theoretical Nanoscience. 10: 763-771. DOI: 10.1166/Jctn.2013.2767 |
0.368 |
|
2013 |
Zhang L, He J, Chen Q, Ma Y, Wang R, Ma Y, Zhao W, Chan M, Chen A. A Nonlinear Poisson-Schrodinger Solver Under Cylindrical Coordinate for Quantum Effect in Nanowire MOSFET Journal of Computational and Theoretical Nanoscience. 10: 73-77. DOI: 10.1166/Jctn.2013.2660 |
0.465 |
|
2013 |
Zhang L, Zahid F, Zhu Y, Liu L, Wang J, Guo H, Chan PCH, Chan M. First Principles simulations of nanoscale silicon devices with uniaxial strain Ieee Transactions On Electron Devices. 60: 3527-3533. DOI: 10.1109/Ted.2013.2275231 |
0.549 |
|
2013 |
Zhang L, Mei J, Zhang X, Tao J, Hu Y, He J, Chan M. A Comparative Study of Ballistic Transport Models for Nanowire MOSFETs Chinese Physics Letters. 30: 117102-117102. DOI: 10.1088/0256-307X/30/11/117102 |
0.554 |
|
2012 |
Zhang L, Wang S, Ma C, He J, Xu C, Ma Y, Ye Y, Liang H, Chen Q, Chan M. Gate underlap design for short channel effects control in cylindrical gate-all-around MOSFETs based on an analytical model Iete Technical Review. 29: 29-35. DOI: 10.4103/0256-4602.93125 |
0.611 |
|
2012 |
Zhang L, Lin X, He J, Chan M. An Analytical Charge Model for Double-Gate Tunnel FETs Ieee Transactions On Electron Devices. 59: 3217-3223. DOI: 10.1109/Ted.2012.2217145 |
0.677 |
|
2012 |
Zhou X, Liu F, Zhang L, Wang C, He J, Zhang X, Chan M. Unified Scale Length for Four-Terminal Double-Gate MOSFETs Ieee Transactions On Electron Devices. 59: 1997-1999. DOI: 10.1109/Ted.2012.2196520 |
0.58 |
|
2012 |
Lou H, Zhang L, Zhu Y, Lin X, Yang S, He J, Chan M. A Junctionless Nanowire Transistor With a Dual-Material Gate Ieee Transactions On Electron Devices. 59: 1829-1836. DOI: 10.1109/Ted.2012.2192499 |
0.638 |
|
2012 |
Li L, Zhang L, Lin X, He J, Chui CO, Chan M. Phase-change memory with multifin thin-film-transistor driver technology Ieee Electron Device Letters. 33: 405-407. DOI: 10.1109/Led.2011.2181480 |
0.595 |
|
2012 |
Zhang J, He J, Zhou X, Zhang L, Ma Y, Chen Q, Zhang X, Yang Z, Wang R, Han Y, Chan M. A unified charge-based model for SOI MOSFETs applicable from intrinsic to heavily doped channel Chinese Physics B. 21: 47303. DOI: 10.1088/1674-1056/21/4/047303 |
0.612 |
|
2011 |
Zhou W, Zhang L, Chen L, Xu Y, Wu W, He J. Simulation study on a new dual-material nanowire MOS surrounding-gate transistor. Journal of Nanoscience and Nanotechnology. 11: 11006-10. PMID 22409044 DOI: 10.1166/Jnn.2011.3962 |
0.44 |
|
2011 |
Zhang L, Zhou X, Xu Y, Chen L, Zhou W, Wang W, He J, Chan M. A unified drain current model for nanoscale double-gate and surrounding-gate MOSFETs incorporating velocity saturation. Journal of Nanoscience and Nanotechnology. 11: 10480-4. PMID 22408930 DOI: 10.1166/Jnn.2011.3983 |
0.629 |
|
2011 |
Zhang X, He J, Zhang L, Zhang J, Ma Y, Wu W, Wang W, Wang R, Gu X, Chan M. A rigorous and concise surface potential-based core model for the undoped symmetric double-gate metal-oxide-semiconductor field effect transistors Journal of Computational and Theoretical Nanoscience. 8: 1857-1862. DOI: 10.1166/Jctn.2011.1893 |
0.542 |
|
2011 |
Shi M, He J, Zhang L, Zhang J, Liu Z, Wu W, Wang W, Ma Y, Zhang X, Zhuang H. A Physics Based Yet Computation Efficient Core Model for Undoped Surrounding-Gate MOSFET Current-Voltage and Capacitance-Voltage Characteristics Prediction Journal of Computational and Theoretical Nanoscience. 8: 1732-1738. DOI: 10.1166/Jctn.2011.1875 |
0.383 |
|
2011 |
Shi M, He J, Liu Z, Wang W, Zhao W, Wang R, Wu W, Ma Y, Zhang D, Bian W, Chan M, Zhang X, Zhang L. 3-D Numerical Simulation Study on 20 nm NMOSFET Design Journal of Computational and Theoretical Nanoscience. 8: 1498-1501. DOI: 10.1166/Jctn.2011.1841 |
0.49 |
|
2011 |
He J, Shi M, Zhang L, Zhang J, Liu C, Zhuang H, Chan M. Computation Efficient yet Accurate Surface Potential Based Analytic Model for Symmetric DG MOSFETs to Predict Current-Voltage Characteristics Journal of Computational and Theoretical Nanoscience. 8: 1548-1551. DOI: 10.1166/Jctn.2011.1827 |
0.608 |
|
2011 |
Zhang L, Lou H, He J, Chan M. Uniaxial Strain Effects on Electron Ballistic Transport in Gate-All-Around Silicon Nanowire MOSFETs Ieee Transactions On Electron Devices. 58: 3829-3836. DOI: 10.1109/Ted.2011.2165215 |
0.497 |
|
2011 |
Zhang L, Li L, He J, Chan M. Modeling Short-Channel Effect of Elliptical Gate-All-Around MOSFET by Effective Radius Ieee Electron Device Letters. 32: 1188-1190. DOI: 10.1109/Led.2011.2159358 |
0.594 |
|
2011 |
Shi M, He J, Zhang L, Ma C, Zhou X, Lou H, Zhuang H, Wang R, Li Y, Ma Y, Wu W, Wang W, Chan M. Zero-Mask Contact Fuse for One-Time-Programmable Memory in Standard CMOS Processes Ieee Electron Device Letters. 32: 955-957. DOI: 10.1109/Led.2011.2147754 |
0.522 |
|
2011 |
Ma C, Zhang L, Zhang C, Zhang X, He J, Zhang X. A physical based model to predict performance degradation of FinFET accounting for interface state distribution effect due to hot carrier injection Microelectronics Reliability. 51: 337-341. DOI: 10.1016/J.Microrel.2010.08.023 |
0.386 |
|
2010 |
Fu Y, Zhang L, Zhou X, He J. Extended Version of Carrier-Based Analytical Model to Account for the Doped Effect of Symmetric Double-Gate MOSFETs Journal of Computational and Theoretical Nanoscience. 7: 627-633. DOI: 10.1166/Jctn.2010.1405 |
0.441 |
|
2010 |
Li Y, Liou JJ, Vinson JE, Zhang L. Investigation of LOCOS- and polysilicon-bound diodes for robust electrostatic discharge (ESD) applications Ieee Transactions On Electron Devices. 57: 814-819. DOI: 10.1109/Ted.2009.2039964 |
0.343 |
|
2010 |
Zhang J, Zhang L, He J, Chan M. A noncharge-sheet channel potential and drain current model for dynamic-depletion silicon-on-insulator metal-oxide-semiconductor field-effect transistors Journal of Applied Physics. 107: 54507. DOI: 10.1063/1.3319656 |
0.614 |
|
2010 |
Zhou X, Zhou Z, Zhang J, Zhang L, Ma C, He J, Zhang X. Comparison and improvement of two core compact models for double-gate MOSFETs Solid-State Electronics. 54: 1444-1446. DOI: 10.1016/J.Sse.2010.06.020 |
0.396 |
|
2010 |
Zhang L, Ma C, He J, Lin X, Chan M. Analytical solution of subthreshold channel potential of gate underlap cylindrical gate-all-around MOSFET Solid-State Electronics. 54: 806-808. DOI: 10.1016/J.Sse.2010.03.020 |
0.603 |
|
2010 |
Wang Y, Yan Z, Zhu J, Zhang L, Lin X, He J, Cao J, Chan M. A generic numerical model for detection of terahertz radiation in MOS field-effect transistors Solid-State Electronics. 54: 791-795. DOI: 10.1016/J.Sse.2010.03.009 |
0.575 |
|
2010 |
Zhang L, Zhang J, Song Y, Lin X, He J, Chan M. Charge-based model for symmetric double-gate MOSFETs with inclusion of channel doping effect Microelectronics Reliability. 50: 1062-1070. DOI: 10.1016/J.Microrel.2010.04.005 |
0.68 |
|
2010 |
Zhang L, Ma C, He J, Lin X, Chan M. Analytical solution of subthreshold channel potential of gate underlap cylindrical gate-all-around MOSFET Journal of End-to-End-Testing. DOI: 10.1016/J.Endend.2010.06.030 |
0.556 |
|
2009 |
Chen Y, He J, Wang Y, Lin X, Zhang L, Chan M. Terahertz Wave Generation and Detection Analysis of Silicon Nanowire MOS Field-Effect Transistor Iete Technical Review. 26: 430-439. DOI: 10.4103/0256-4602.57828 |
0.513 |
|
2009 |
Liu F, Zhang L, Zhang J, He J, Chan M. Effects of body doping on threshold voltage and channel potential of symmetric DG MOSFETs with continuous solution from accumulation to strong-inversion regions Semiconductor Science and Technology. 24: 85005. DOI: 10.1088/0268-1242/24/8/085005 |
0.588 |
|
2009 |
Zhang L, Guan Y, Zhou W, Chen L, Xu Y, He J. A carrier-based analytic drain current model incorporating velocity saturation for undoped surrounding-gate MOSFETs Semiconductor Science and Technology. 24: 115003. DOI: 10.1088/0268-1242/24/11/115003 |
0.461 |
|
2009 |
He J, Zhang L, Zhang J, Ma C, Liu F, Chan M. A complete analytic surface potential-based core model for intrinsic nanowire surrounding-gate MOSFETs Molecular Simulation. 35: 483-490. DOI: 10.1080/08927020802706995 |
0.599 |
|
2009 |
He J, Zhang L, Zheng R, Zhang J, Chan M. A continuous surface-potential solution from accumulation to inversion for intrinsic symmetric double-gate MOSFETs Molecular Simulation. 35: 448-455. DOI: 10.1080/08927020802609454 |
0.563 |
|
2009 |
Zhang L, He J. Charge-based model enhancement for undoped surrounding-gate MOSFETs Electronics Letters. 45: 569-570. DOI: 10.1049/El.2009.0424 |
0.397 |
|
2009 |
Liu F, Zhang J, He F, Liu F, Zhang L, Chan M. A charge-based compact model for predicting the current–voltage and capacitance–voltage characteristics of heavily doped cylindrical surrounding-gate MOSFETs Solid-State Electronics. 53: 49-53. DOI: 10.1016/J.Sse.2008.09.016 |
0.587 |
|
2009 |
Bian W, He J, Zhang L, Zhang J, Chan M. Sub-threshold behavior of long channel undoped cylindrical surrounding-gate MOSFETs Microelectronics Reliability. 49: 897-903. DOI: 10.1016/J.Microrel.2009.05.008 |
0.578 |
|
2008 |
Liu F, He J, Zhang L, Zhang J, Hu J, Ma C, Chan M. A Charge-Based Model for Long-Channel Cylindrical Surrounding-Gate MOSFETs From Intrinsic Channel to Heavily Doped Body Ieee Transactions On Electron Devices. 55: 2187-2194. DOI: 10.1109/Ted.2008.926735 |
0.607 |
|
2008 |
Zhang L, He J, Zhang J, Liu F, Fu Y, Song Y, Zhang X. An Analytic Model for Nanowire MOSFETs With Ge/Si Core/Shell Structure Ieee Transactions On Electron Devices. 55: 2907-2917. DOI: 10.1109/Ted.2008.2007417 |
0.439 |
|
2008 |
Yang J, He J, Liu F, Zhang L, Liu F, Zhang X, Chan M. A Compact Model of Silicon-Based Nanowire MOSFETs for Circuit Simulation and Design Ieee Transactions On Electron Devices. 55: 2898-2906. DOI: 10.1109/Ted.2008.2005184 |
0.639 |
|
2008 |
Ma C, Li B, Wei Y, Zhang L, He J, Zhang X, Lin X, Chan M. FinFET reliability study by forward gated-diode generation–recombination current Semiconductor Science and Technology. 23: 75008. DOI: 10.1088/0268-1242/23/7/075008 |
0.622 |
|
2008 |
He J, Bian W, Chen Y, Wei Y, Zhang L, Zhang J, Chan M. A rigorous carrier-based analytic model for undoped ultra-thin-body silicon-on-insulator (UTB-SOI) MOSFETs Molecular Simulation. 34: 63-72. DOI: 10.1080/08927020701730393 |
0.635 |
|
2007 |
He J, Zhang L, Zhang J, Fu Y, Zheng R, Chan M. A unified carrier-based model for undoped symmetric double-gate and surrounding-gate MOSFETs Semiconductor Science and Technology. 22: 1312-1316. DOI: 10.1088/0268-1242/22/12/013 |
0.608 |
|
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