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Tat-Sing P. Chow - Publications

Affiliations: 
Electrical Engineering Rensselaer Polytechnic Institute, Troy, NY, United States 
Area:
Electronics and Electrical Engineering, Condensed Matter Physics
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127 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Chowdhury S, Hitchcock C, Dahal R, Bhat IB, Chow TP. 4H-SiC n-channel DMOS IGBTs on (0001) and (000-1) oriented lightly doped free-standing substrates Materials Science Forum. 858: 954-957. DOI: 10.4028/Www.Scientific.Net/Msf.858.954  0.439
2016 Chowdhury S, Yamamoto K, Chow TP. Effect of activation annealing and reactive ion etching on MOS channel properties of (11-20) oriented 4H-SiC Materials Science Forum. 858: 635-638. DOI: 10.4028/www.scientific.net/MSF.858.635  0.404
2016 Chowdhury S, Hitchcock C, Stum Z, Dahal RP, Bhat IB, Chow TP. Experimental demonstration of high-voltage 4H-SiC bi-directional IGBTs Ieee Electron Device Letters. 37: 1033-1036. DOI: 10.1109/Led.2016.2581419  0.455
2016 Chowdhury S, Hitchcock C, Stum Z, Dahal R, Bhat IB, Chow TP. 4H-SiC n-channel insulated gate bipolar transistors on (0001) and (000-1) oriented free-standing n- substrates Ieee Electron Device Letters. 37: 317-320. DOI: 10.1109/Led.2016.2521164  0.432
2016 Chowdhury S, Hitchcock C, Dahal R, Bhat IB, Chow TP. High voltage 4H-SiC Bi-directional IGBTs Proceedings of the International Symposium On Power Semiconductor Devices and Ics. 2016: 463-466. DOI: 10.1109/ISPSD.2016.7520878  0.45
2016 Chowdhury S, Chow TP. Performance tradeoffs for ultra-high voltage (15 kV to 25 kV) 4H-SiC n-channel and p-channel IGBTs Proceedings of the International Symposium On Power Semiconductor Devices and Ics. 2016: 75-78. DOI: 10.1109/ISPSD.2016.7520781  0.307
2016 Chowdhury S, Chow TP. Comparative performance assessment of SiC and GaN power rectifier technologies Physica Status Solidi (C) Current Topics in Solid State Physics. 13: 360-364. DOI: 10.1002/pssc.201510204  0.315
2016 Guo Z, Tang K, Chow TP. Temperature dependence of GaN MOS capacitor characteristics Physica Status Solidi (C) Current Topics in Solid State Physics. DOI: 10.1002/pssc.201510201  0.3
2015 Yamamoto K, Chowdhury S, Chow TP. Study of mobility limiting mechanisms in (11-20) 4H-SiC no annealed MOSFETs Materials Science Forum. 821: 713-716. DOI: 10.4028/www.scientific.net/MSF.821-823.713  0.339
2015 Chowdhury S, Yamamoto K, Hitchcock C, Chow TP. Characteristics of MOS capacitors with no and POCL3 annealed gate oxides on (0001), (11-20) and (000-1) 4H-SiC Materials Science Forum. 821: 500-503. DOI: 10.4028/www.scientific.net/MSF.821-823.500  0.388
2015 Jones KA, Chow TP, Wraback M, Shatalov M, Sitar Z, Shahedipour F, Udwary K, Tompa GS. AlGaN devices and growth of device structures Journal of Materials Science. 50: 3267-3307. DOI: 10.1007/S10853-015-8878-3  0.356
2015 Li Z, Waldron J, Chowdhury S, Zhao L, Detchprohm T, Wetzel C, Karlicek RF, Chow TP. High temperature characteristics of monolithically integrated LED and MOS-channel HEMT in GaN using selective epi removal Physica Status Solidi (a) Applications and Materials Science. 212: 1110-1115. DOI: 10.1002/Pssa.201431660  0.539
2014 Chowdhury S, Stum Z, Li ZD, Ueno K, Chow TP. Comparison of 600V Si, SiC and GaN power devices Materials Science Forum. 778: 971-974. DOI: 10.4028/www.scientific.net/MSF.778-780.971  0.343
2014 Naik H, Chow TP. 4H-SiC MOS capacitors and MOSFET fabrication with gate oxidation at 1400°C Materials Science Forum. 778: 607-610. DOI: 10.4028/Www.Scientific.Net/Msf.778-780.607  0.65
2014 Stum Z, Tang Y, Naik H, Chow TP. Improved analytical expressions for avalanche breakdown in 4H-SiC Materials Science Forum. 778: 467-470. DOI: 10.4028/Www.Scientific.Net/Msf.778-780.467  0.595
2014 Wu JW, Chowdhury S, Naik H, Picard J, Lee N, Hitchcock C, Lu JJQ, Chow TP. S4-P7: Low-temperature hydrophobic wafer bonding for 1200V, 25A bi-directional Si UMOS IGBTs Lester Eastman Conference 2014 - High Performance Devices, Lec 2014. DOI: 10.1109/LEC.2014.6951568  0.537
2013 Takashima S, Li Z, Chow TP. Metal-oxide-semiconductor interface and dielectric properties of atomic layer deposited SiO2 on GaN Japanese Journal of Applied Physics. 52. DOI: 10.7567/Jjap.52.08Jn24  0.573
2013 Li Z, Pala V, Chow TP. Avalanche breakdown design parameters in GaN Japanese Journal of Applied Physics. 52. DOI: 10.7567/Jjap.52.08Jn05  0.548
2013 Li Z, Chow TP. Design and simulation of novel enhancement mode 5-20 kV GaN vertical superjunction high electron mobility transistors for smart grid applications Japanese Journal of Applied Physics. 52. DOI: 10.7567/JJAP.52.08JN01  0.312
2013 Takashima S, Li Z, Chow TP. Sidewall dominated characteristics on fin-gate AlGaN/GaN MOS-Channel-HEMTs Ieee Transactions On Electron Devices. 60: 3025-3031. DOI: 10.1109/Ted.2013.2278185  0.544
2013 Li Z, Chow TP. Design and simulation of 5-20-kV GaN enhancement-mode vertical superjunction HEMT Ieee Transactions On Electron Devices. 60: 3230-3237. DOI: 10.1109/Ted.2013.2266544  0.461
2013 Waldron J, Chow TP. Physics-based analytical model for high-voltage bidirectional GaN transistors using lateral GaN power HEMT Proceedings of the International Symposium On Power Semiconductor Devices and Ics. 213-216. DOI: 10.1109/ISPSD.2013.6694483  0.357
2013 Pala V, Hella M, Chow TP. Double recessed GaAs pHEMTs for 20-50 v power switching Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. DOI: 10.1109/CSICS.2013.6659223  0.322
2013 Li Z, Waldron J, Detchprohm T, Wetzel C, Karlicek RF, Chow TP. Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in GaN on sapphire substrate Applied Physics Letters. 102. DOI: 10.1063/1.4807125  0.553
2012 Bolotnikov AV, Losee P, Matocha K, Nasadoski J, Glaser J, Arthur S, Stum Z, Garrett J, Elasser A, Stevanovic L, Naik H, Chow TP. Design, yield and process capability study of 8kV 4H-SiC PIN diodes Materials Science Forum. 717: 953-956. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.953  0.637
2012 Naik H, Li Z, Issa H, Tian Y, Chow TP. Study of high temperature microwave annealing on the performance of 4H-SiC MOS capacitors Materials Science Forum. 717: 769-772. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.769  0.704
2012 Takashima S, Li Z, Chow TP. DC breakdown and TDDB study of ALD SiO2 on GaN 2012 Lester Eastman Conference On High Performance Devices, Lec 2012. DOI: 10.1109/lec.2012.6410987  0.317
2012 Li Z, Naik H, Chow TP. Design of GaN and SiC 5-20kV vertical superjunction structures 2012 Lester Eastman Conference On High Performance Devices, Lec 2012. DOI: 10.1109/lec.2012.6410985  0.572
2012 Naik H, Chow TP. Comparison of AC I-V characteristic of Si and SiC MOSFETs 2012 Lester Eastman Conference On High Performance Devices, Lec 2012. DOI: 10.1109/lec.2012.6410984  0.616
2012 Zhang J, Hitchcock C, Li Z, Chow TP. Investigation of pyroelectric polarization effect on GaN MOS capacitors and field-effect transistors 2012 Lester Eastman Conference On High Performance Devices, Lec 2012. DOI: 10.1109/lec.2012.6410982  0.408
2012 Li Z, Waldron J, Dayal R, Parsa L, Hella M, Chow TP. High voltage normally-off GaN MOSC-HEMTs on silicon substrates for power switching applications Proceedings of the International Symposium On Power Semiconductor Devices and Ics. 45-48. DOI: 10.1109/ISPSD.2012.6229019  0.382
2012 Marron T, Takashima S, Li Z, Chow TP. Impact of annealing on ALD Al 2O 3 gate dielectric for GaN MOS devices Physica Status Solidi (C) Current Topics in Solid State Physics. 9: 907-910. DOI: 10.1002/Pssc.201100414  0.568
2012 Li Z, Zhang J, Chow TP. Study of CF 4 plasma treatment in drift region optimization of high-voltage GaN MOSC-HEMTs Physica Status Solidi (C) Current Topics in Solid State Physics. 9: 861-863. DOI: 10.1002/Pssc.201100413  0.503
2011 Naik H, Chow TP. Comparison of inversion electron transport properties of (0001) 4H and 6H-SiC MOSFETs Materials Science Forum. 679: 678-681. DOI: 10.4028/Www.Scientific.Net/Msf.679-680.678  0.62
2011 Naik H, Chow TP. Study of mobility limiting mechanisms in (0001) 4H and 6H-SiC MOSFETs Materials Science Forum. 679: 595-598. DOI: 10.4028/Www.Scientific.Net/Msf.679-680.595  0.601
2011 Naik H, Marron T, Chow TP. Cryogenic operation of GaN Schottky rectifiers International Journal of High Speed Electronics and Systems. 20: 457-461. DOI: 10.1142/S012915641100674X  0.592
2011 Li Z, Chow TP. Channel scaling of hybrid GaN MOS-HEMTs Solid-State Electronics. 56: 111-115. DOI: 10.1016/J.Sse.2010.11.009  0.511
2011 Li Z, Chow TP. Drift region optimization in high-voltage GaN MOS-gated HEMTs Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2436-2438. DOI: 10.1002/Pssc.201001173  0.603
2011 Li Z, Naik H, Chow TP. Modeling and experimental study of MOS channel mobility of etched GaN on silicon substrate Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2433-2435. DOI: 10.1002/Pssc.201001172  0.669
2011 Naik H, Marron T, Chow TP. High-low temperature performance of GaN 600 V Schottky rectifiers Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2219-2222. DOI: 10.1002/Pssc.201001089  0.629
2010 Naik H, Li Z, Chow TP. Experimental identification of extra type of charges at SiO2/SiC interface in 4H-SiC Materials Science Forum. 645: 519-522. DOI: 10.4028/Www.Scientific.Net/Msf.645-648.519  0.708
2010 Chow TP. SiC and GaN MOS interfaces- Similarities and differences Materials Science Forum. 645: 473-478. DOI: 10.4028/www.scientific.net/MSF.645-648.473  0.479
2010 Niiyama Y, Ootomo S, Li J, Nomura T, Kato S, Chow TP. Normally off operation GaN-based MOSFETs for power electronics applications Semiconductor Science and Technology. 25. DOI: 10.1088/0268-1242/25/12/125006  0.395
2010 Li Z, Tang K, Chow TP, Sugimoto M, Uesugi T, Kachi T. Design and simulations of novel enhancement-mode high-voltage GaN vertical hybrid MOS-HEMTs Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 1944-1948. DOI: 10.1002/Pssc.200983460  0.581
2010 Li Z, Marron T, Naik H, Huang W, Chow TP. Experimental study on current collapse of GaN MOSFETs, HEMTs and MOS-HEMTs Proceedings of the International Symposium On Power Semiconductor Devices and Ics. 225-228.  0.359
2009 Naik H, Tang K, Marron T, Chow TP, Fronheiser J. Comparison of 4H-SiC MOSFETs on (0001), (000-1) and (11-20) oriented substrates Materials Science Forum. 615: 785-788. DOI: 10.4028/Www.Scientific.Net/Msf.615-617.785  0.674
2009 Naik H, Tang K, Chow TP. Effect of graphite cap for implant activation on inversion channel mobility in 4H-SiC MOSFETs Materials Science Forum. 615: 773-776. DOI: 10.4028/Www.Scientific.Net/Msf.615-617.773  0.664
2009 Losee PA, Wang Y, Li C, Sharma SK, Bhat IB, Chow TP, Gutmann RJ. Comparative evaluation of anode layers on the electrical characteristics of high voltage 4H-SiC PiN diodes Materials Science Forum. 600: 1003-1006. DOI: 10.4028/Www.Scientific.Net/Msf.600-603.1003  0.341
2009 Wang Y, Khan T, Chow TP. Optimization of 4H-SiC MOS properties with cesium implantation Materials Science Forum. 600: 751-754. DOI: 10.4028/3-908453-11-9.751  0.325
2009 Naik H, Wang Y, Chow TP. Characterization and modeling of integrated diode in 1.2kV 4H-SiC vertical power MOSFET International Journal of High Speed Electronics and Systems. 19: 167-172. DOI: 10.1142/S0129156409006229  0.617
2009 Naik H, Tang K, Chow TP. Effect of gate oxide processes on 4H-SiC MOSFETs on (000-1) oriented substrate International Journal of High Speed Electronics and Systems. 19: 161-166. DOI: 10.1142/S0129156409006217  0.64
2009 Tang K, Huang W, Chow TP. Performance of MOSFETs on reactive-ion-etched GaN surfaces International Journal of High Speed Electronics and Systems. 19: 121-127. DOI: 10.1142/S0129156409006163  0.367
2009 Huang W, Chow TP, Niiyama Y, Nomura T, Yoshida S. Experimental demonstration of novel high-voltage epilayer RESURF GaN MOSFET Ieee Electron Device Letters. 30: 1018-1020. DOI: 10.1109/LED.2009.2027820  0.365
2009 Tang K, Li Z, Chow TP, Niiyama Y, Nomura T, Yoshida S. Enhancement-mode GaN hybrid MOS-HEMTs with breakdown voltage of 1300V Proceedings of the International Symposium On Power Semiconductor Devices and Ics. 279-282. DOI: 10.1109/ISPSD.2009.5158056  0.368
2009 Huang W, Chow TP, Niiyama Y, Nomura T, Yoshida S. 730V, 34mΩ-cm2 lateral epilayer RESURF GaN MOSFET Proceedings of the International Symposium On Power Semiconductor Devices and Ics. 29-32. DOI: 10.1109/ISPSD.2009.5157993  0.351
2009 Kambayashi H, Satoh Y, Niiyama Y, Kokawa T, Iwami M, Nomura T, Kato S, Chow TP. Enhancement-mode GaN hybrid MOS-HFETs on Si substrates with over 70 a operation Proceedings of the International Symposium On Power Semiconductor Devices and Ics. 21-24. DOI: 10.1109/ISPSD.2009.5157991  0.341
2009 Niiyama Y, Kambayashi H, Ootomo S, Nomura T, Kato S, Chow TP. Over 1500 V/2 A operation of GaN RESURF-MOSFETs on sapphire substrate Electronics Letters. 45: 379-380. DOI: 10.1049/el.2009.2851  0.301
2009 Tang K, Huang W, Chow TP. GaN MOS capacitors and FETs on plasma-etched GaN surfaces Journal of Electronic Materials. 38: 523-528. DOI: 10.1007/s11664-008-0617-y  0.37
2009 Chow TP, Naik H, Li Z. Comparative study of 4H-SiC and 2H-GaN MOS capacitors and FETs Physica Status Solidi (a) Applications and Materials Science. 206: 2478-2486. DOI: 10.1002/Pssa.200925125  0.714
2008 Wang Y, Tang K, Khan T, Balasubramanian MK, Naik H, Wang W, Chow TP. The effect of gate oxide processes on the performance of 4H-SiC MOSFETs and gate-controlled diodes Ieee Transactions On Electron Devices. 55: 2046-2053. DOI: 10.1109/Ted.2008.926674  0.634
2008 Zhu L, Chow TP. Advanced high-voltage 4H-SiC Schottky rectifiers Ieee Transactions On Electron Devices. 55: 1871-1874. DOI: 10.1109/TED.2008.926642  0.421
2008 Zhu L, Chow TP. Analytical modeling of high-voltage 4H-SiC junction barrier Schottky (JBS) rectifiers Ieee Transactions On Electron Devices. 55: 1857-1863. DOI: 10.1109/TED.2008.926638  0.391
2008 Sharma S, Li C, Bhat IB, Chow TP. High-voltage 4H-SiC bipolar junction transistors with epitaxial regrowth of the base contact Ieee Transactions On Electron Devices. 55: 3360-3366. DOI: 10.1109/TED.2008.2006920  0.397
2008 Wang Y, Cass C, Tang K, Naik H, Chow TP, Boroyevich D, Wang F. Modeling of high voltage 4H-SiC JFETs and MOSFETs for power electronics applications Pesc Record - Ieee Annual Power Electronics Specialists Conference. 4758-4761. DOI: 10.1109/PESC.2008.4592722  0.376
2008 Huang W, Li Z, Chow TP, Niiyama Y, Nomura T, Yoshida S. Enhancement-mode GaN hybrid MOS-HEMTs with Ron,sp of 20 mΩ-cm2 Proceedings of the International Symposium On Power Semiconductor Devices and Ics. 295-298. DOI: 10.1109/ISPSD.2008.4538957  0.382
2008 Huang W, Chow TP, Niiyama Y, Nomura T, Yoshida S. Lateral implanted RESURF GaN MOSFETs with BV up to 2.5 kV Proceedings of the International Symposium On Power Semiconductor Devices and Ics. 291-294. DOI: 10.1109/ISPSD.2008.4538956  0.357
2008 Varadarajan KR, Chow TP, Liu R, Gonzalez F, Choy B. An 80V class silicon lateral trench power MOSFET for high frequency switching applications Proceedings of the International Symposium On Power Semiconductor Devices and Ics. 119-122. DOI: 10.1109/ISPSD.2008.4538912  0.339
2008 Jennings MR, Pérez-Tomás A, Gammon PM, Davis M, Chow TP, Mawby PA. Layered metal and highly doped MBE Si contacts for 4H-SiC power devices Iet Seminar Digest. 2008. DOI: 10.1049/ic:20080185  0.344
2008 Huang W, Khan T, Chow TP. Optimization of GaN MOS capacitors and FETs Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 2016-2018. DOI: 10.1002/pssc.200778694  0.391
2007 Wang Y, Losee PA, Balachandran S, Bhat IB, Chow TP, Skromme BJ, Kim JK, Schubert EF. Achieving low sheet resistance from implanted P-type layers in 4H-SiC using high temperature graphite capped annealing Materials Science Forum. 556: 567-570. DOI: 10.4028/Www.Scientific.Net/Msf.556-557.567  0.307
2007 Losee PA, Li C, Kumar RJ, Chow TP, Bhat IB, Gutmann RJ. Electrical characteristics and carrier lifetime measurements in high voltage 4H-SiC PiN diodes International Journal of High Speed Electronics and Systems. 17: 43-48. DOI: 10.1142/9789812770332_0009  0.378
2007 Balachandran S, Li C, Losee PA, Bhat IB, Chow TP. 6kV 4H-SiC BJTs with specific on-resistance below the unipolar limit using a selectively grown base contact process Proceedings of the International Symposium On Power Semiconductor Devices and Ics. 293-296. DOI: 10.1109/ISPSD.2007.4294990  0.348
2007 Huang W, Chow TP. Monolithic high-voltage GaN MOSFET/schottky pair with reverse blocking capability Proceedings of the International Symposium On Power Semiconductor Devices and Ics. 265-268. DOI: 10.1109/ISPSD.2007.4294983  0.387
2007 Losee PA, Li C, Wang Y, Sharma SK, Chow TP, Bhat IB, Stahlbush RE, Gutmann RJ. L0kV 4H-SiC PiN diodes designed for improved switching performance using emitter injection control Proceedings of the International Symposium On Power Semiconductor Devices and Ics. 97-100. DOI: 10.1109/ISPSD.2007.4294941  0.312
2007 Cass CJ, Wang Y, Burgos R, Chow TP, Wang F, Boroyevich D. Evaluation of SiC JFETs for a three-phase current-source rectifier with high switching frequency Conference Proceedings - Ieee Applied Power Electronics Conference and Exposition - Apec. 345-351. DOI: 10.1109/APEX.2007.357537  0.316
2007 Ramaiah KS, Bhat I, Chow TP, Kim JK, Schubert EF, Johnstone D. Studies of 4H-SiC wafer and its epitaxial layers grown by chemical vapor deposition Physica B: Condensed Matter. 391: 35-41. DOI: 10.1016/j.physb.2006.08.051  0.311
2007 Huang W, Chow TP, Khan T. Experimental demonstration of enhancement mode GaN MOSFETs Physica Status Solidi (a) Applications and Materials Science. 204: 2064-2067. DOI: 10.1002/pssa.200674918  0.375
2006 Losee PA, Li C, Kumar RJ, Chow TP, Bhat IB, Gutmann RJ, Stahlbush RE. Improving switching characteristics of 4H-SiC junction rectifiers using epitaxial and implanted anodes with epitaxial refill Materials Science Forum. 527: 1363-1366. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.1363  0.424
2006 Chow TP, Agarwal AK. SiC BJTs International Journal of High Speed Electronics and Systems. 16: 855-881. DOI: 10.1142/S0129156406004041  0.336
2006 Zhu L, Chow TP, Jones KA, Agarwal A. Design, fabrication, and characterization of low forward drop, low leakage, 1-kV 4H-SiC JBS rectifiers Ieee Transactions On Electron Devices. 53: 363-368. DOI: 10.1109/TED.2005.862704  0.362
2006 Huang W, Khan T, Chow TP. Enhancement-mode n-channel GaN MOSFETs on p and n-GaN/sapphire substrates Ieee Electron Device Letters. 27: 796-798. DOI: 10.1109/LED.2006.883054  0.3
2006 Chow TP. High-voltage SiC and GaN power devices Microelectronic Engineering. 83: 112-122. DOI: 10.1016/j.mee.2005.10.057  0.308
2006 Zhu L, Canhua LI, Chow TP, Bhat IB, Jones KA, Scozzie C, Agarwal A. Characterization of Ti schottky diodes on epi-regrown 4H-SiC Journal of Electronic Materials. 35: 754-757. DOI: 10.1007/S11664-006-0134-9  0.358
2006 Deng Y, Wang W, Fang Q, Koushik MB, Chow TP. Extraction of SiO 2/SiC interface trap profile in 4H- And 6H-SiC metal-oxide semiconductor field-effect transistors from subthreshold characteristics at 25°C and 150°C Journal of Electronic Materials. 35: 618-624. DOI: 10.1007/s11664-006-0109-x  0.466
2006 Lin Z, Chow TP. Simulation of high-voltage injection-enhanced 4H-SiC N-channel IGBTs with forward drop approaching that of a PiN junction rectifier Materials Science Forum. 527: 1401-1404.  0.401
2006 Huang W, Khan T, Chow TP. Enhancement-mode n-channel GaN MOSFETs on p and n- GaN/sapphire substrates Proceedings of the International Symposium On Power Semiconductor Devices and Ics. 2006.  0.35
2006 Balachandran S, Chow TP, Agarwal A. Optimization of the specific on-resistance of 4H-SiC BJTs Materials Science Forum. 527: 1429-1432.  0.313
2006 Balachandran S, Chow TP, Agarwal A. Performance assessment of 4H-SiC bipolar junction transistors and insulated gate bipolar transistors Materials Science Forum. 527: 1433-1436.  0.377
2006 Zhu L, Chow TP, Jones KA, Scozzie C, Agarwal A. Performance comparison of 1.5kV 4H-SiC buried channel and lateral channel JBS rectifiers Materials Science Forum. 527: 1159-1162.  0.335
2006 Lin Z, Losee PA, Chow TP, Jones KA, Scozzie C, Ervin MH, Shah PB, Derenge MA, Vispute RD, Venkatesan T, Agarwal A. Characteristics and ionization coefficient extraction of 1kV 4H-SiC implanted anode PiN rectifiers with near ideal performance fabricated using AIN capped annealing Materials Science Forum. 527: 1367-1370.  0.423
2006 Balachandran S, Chow TP, Agarwal A. Forward active and blocking performance of 4H-SiC bipolar junction transistors Materials Research Society Symposium Proceedings. 888: 365-370.  0.368
2005 Matocha K, Chow TP, Gutmann RJ. High-voltage normally off GaN MOSFETs on sapphire substrates Ieee Transactions On Electron Devices. 52: 6-10. DOI: 10.1109/Ted.2004.841355  0.435
2005 Balachandran S, Chow TP, Agarwal A, Scozzie C, Jones KA. 4 kV 4H-SiC epitaxial emitter bipolar junction transistors Ieee Electron Device Letters. 26: 470-472. DOI: 10.1109/LED.2005.851174  0.372
2005 Krishnaswami S, Agarwal A, Ryu SH, Capell C, Richmond J, Palmour J, Balachandran S, Chow TP, Bayne S, Geil B, Jones K, Scozzie C. 1000-V, 30-A 4H-SiC BJTs with high current gain Ieee Electron Device Letters. 26: 175-177. DOI: 10.1109/LED.2004.842731  0.412
2005 Chow TP. High-voltage SiC and GaN devices for power electronics applications 2005 International Semiconductor Device Research Symposium. 2005: 161.  0.311
2005 Balachandran S, Chow TP, Agarwal A. Low and high temperature performance of 600V 4H-SiC epitaxial emitter BJTs Materials Science Forum. 483: 909-912.  0.373
2005 Lin Z, Balachandran S, Chow TP. Comparison of high-voltage 4H-SiC insulated-gate bipolar transistor (IGBT) and MOS-gated bipolar transistor (MGT) Materials Science Forum. 483: 917-920.  0.387
2005 Li C, Losee P, Seiler J, Bhat I, Chow TP. Characteristics of trench-refilled 4H-SiC P-N junction diodes fabricated by selective epitaxial growth Materials Science Forum. 483: 159-162.  0.392
2005 Balachandran S, Chow TP, Agarwal A, Scozzie S, Jones KA. BVCEO versus BVCBO for 4H and 6H polytype SiC Bipolar Junction Transistors Materials Science Forum. 483: 893-896.  0.381
2005 Krishnaswami S, Agarwal A, Capell C, Richmond J, Ryu SH, Palmour J, Balachandran S, Chow TP, Bayne S, Geil B, Jones KA, Scozzie C. 1000 V, 30 A SiC Bipolar Junction Transistors and integrated darlington pairs Materials Science Forum. 483: 901-904.  0.362
2005 Losee PA, Zhu L, Chow TP, Bhat IB, Gutmann RJ. Degraded blocking performance of 4H-SiC rectifiers under high dV/dt conditions Proceedings of the International Symposium On Power Semiconductor Devices and Ics. 219-222.  0.362
2005 Zhu L, Li C, Chow TP, Bhat IB, Jones KA, Scozzie C, Agarwal A. 1.5kV novel 4H-SiC Lateral Channel (LC) JBS rectifiers with low leakage current and capacitance Proceedings of the International Symposium On Power Semiconductor Devices and Ics. 283-286.  0.387
2005 Huang W, Chow TP, Yang J, Butler JE. High-voltage diamond vertical Schottky rectifiers Proceedings of the International Symposium On Power Semiconductor Devices and Ics. 319-322.  0.383
2005 Balachandran S, Chow TP, Agarwal A, Scozzie C, Jones KA. 4kV 4H-SiC epitaxial emitter bipolar junction transistors Proceedings of the International Symposium On Power Semiconductor Devices and Ics. 291-294.  0.375
2005 Chow TP. SiC bipolar power devices Mrs Bulletin. 30: 299-304.  0.323
2005 Li C, Losee P, Seiler J, Bhat I, Chow TP. Fabrication and characterization of 4H-SiC P-N junction diodes by selective-epitaxial growth using TaC as the mask Journal of Electronic Materials. 34: 450-456.  0.385
2004 Huang W, Chow TP, Yang J, Butler JE. High-voltage diamond schottky rectifiers International Journal of High Speed Electronics and Systems. 14: 872-878. DOI: 10.1142/S0129156404002971  0.319
2004 Zhu L, Losee P, Chow TP. Design of high voltage 4H-SiC superjunction Schottky rectifiers International Journal of High Speed Electronics and Systems. 14: 865-871. DOI: 10.1142/S012915640400296X  0.404
2004 Balachandran S, Chow TP, Agarwal A, Tipton W, Scozzie S. Gummel-Poon model for 1.8kV SiC high-voltage bipolar junction transistor Pesc Record - Ieee Annual Power Electronics Specialists Conference. 4: 2994-2998. DOI: 10.1109/PESC.2004.1355311  0.356
2004 Wang W, Banerjee S, Chow TP, Gutmann RJ. 930-V 170-mΩ · cm2 lateral two-zone RESURF MOSFETs in 4H-SiC with NO annealing Ieee Electron Device Letters. 25: 185-187. DOI: 10.1109/Led.2004.825196  0.445
2004 Chow TP. High-voltage SiC and GaN power devices Proceedings of the Ieee Bipolar/Bicmos Circuits and Technology Meeting. 198-200.  0.324
2004 Wang W, Banerjee S, Chow TP, Gutmann RJ. 930V, 170mΩ.cm2 lateral two-zone RESURF MOSFETs in 4H-SiC with NO annealing Materials Science Forum. 457: 1413-1416.  0.467
2004 Losee PA, Balachandran SK, Zhu L, Li C, Seiler J, Chow TP, Bhat IB, Gutmann RJ. High-voltage 4H-SiC PiN rectifiers with single-implant, multi-zone JTE termination Ieee International Symposium On Power Semiconductor Devices and Ics (Ispsd). 16: 301-304.  0.39
2004 Agarwal AK, Ryu SH, Richmond J, Capell C, Palmour JW, Balachandran S, Chow TP, Geil B, Bayne S, Scozzie C, Jones KA. Recent progress in SiC Bipolar Junction Transistors Ieee International Symposium On Power Semiconductor Devices and Ics (Ispsd). 16: 361-364.  0.367
2003 Elasser A, Kheraluwala MH, Ghezzo M, Steigerwald RL, Evers NA, Kretchmer J, Chow TP. A Comparative Evaluation of New Silicon Carbide Diodes and State-of-the-Art Silicon Diodes for Power Electronic Applications Ieee Transactions On Industry Applications. 39: 915-921. DOI: 10.1109/TIA.2003.813730  0.4
2003 Matocha K, Gutmann RJ, Chow TP. Effect of annealing on GaN-insulator interfaces characterized by metal-insulator-semiconductor capacitors Ieee Transactions On Electron Devices. 50: 1200-1204. DOI: 10.1109/TED.2003.813456  0.354
2003 Tang Y, Chow TP. Monolithic 4H-SiC Darlington transistors with a peak current gain of 2000 Device Research Conference - Conference Digest, Drc. 2003: 79-80. DOI: 10.1109/DRC.2003.1226881  0.329
2003 Banerjee S, Chow TP, Gutmann RJ. Comparison of 1kV Lateral RESURF MOSFETs in 4H-SiC and 6H-SiC Materials Science Forum. 433: 757-760.  0.395
2003 Tang Y, Chow TP. Demonstration of Monolithic Dalington Transistors in 4H-SiC Materials Science Forum. 433: 789-792.  0.427
2003 Tang Y, Chow TP. High gain monolithic 4H-SiC Darlington transistors Ieee International Symposium On Power Semiconductor Devices and Ics (Ispsd). 383-386.  0.332
2003 Matocha K, Chow TP, Gutmann RJ. High-voltage accumulation-mode lateral RESURF GaN MOSFETs on SiC substrate Ieee International Symposium On Power Semiconductor Devices and Ics (Ispsd). 54-57.  0.397
2003 Agarwal AK, Ryu SH, Richmond J, Capell C, Palmour JW, Tang Y, Balachandran S, Chow TP. Large area, 1.3 kV, 17 A, bipolar junction transistors in 4H-SiC Ieee International Symposium On Power Semiconductor Devices and Ics (Ispsd). 135-138.  0.379
2002 Banerjee S, Chow TP, Gutmann RJ. 1300-V 6H-SiC lateral MOSFETs with two RESURF zones Ieee Electron Device Letters. 23: 624-626. DOI: 10.1109/Led.2002.803768  0.405
2002 Mondal K, Natarajan R, Chow TP. An integrated 500-V power DMOSFET/antiparallel rectifier device with improved diode reverse recovery characteristics Ieee Electron Device Letters. 23: 562-564. DOI: 10.1109/LED.2002.802595  0.306
2002 Chatty K, Banerjee S, Chow TP, Gutmann RJ. Hysteresis in transfer characteristics in 4H-SiC depletion/accumulation-mode MOSFETs Ieee Electron Device Letters. 23: 330-332. DOI: 10.1109/Led.2002.1004225  0.397
2002 Elasser A, Chow TP. Silicon carbide benefits and advantages for power electronics circuits and systems Proceedings of the Ieee. 90: 969-986. DOI: 10.1109/JPROC.2002.1021562  0.335
2002 Losee PA, Gutmann RJ, Chow TP, Ryu SH, Agarwal AK, Palmour JW. Simulation, Characterization and Design of Epitaxial Emitter NPN 4H-SiC BJTs for Amplifier Applications Proceedings Ieee Lester Eastman Conference On High Performance Devices. 186-192.  0.303
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