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T.S Kalkur - Publications

Affiliations: 
College of Engineering and Applied Science - Electrical Engineering University of Colorado, Colorado Springs, Colorado Springs, CO, United States 
Area:
Electronics and Electrical Engineering
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106 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2018 Sbrockey NM, Salagaj T, Tompa GS, Kalkur TS. Synthesis and characterization of graphene based thermoacoustic devices Journal of Crystal Growth. 493: 41-44. DOI: 10.1016/J.Jcrysgro.2018.04.019  0.325
2017 Mansour AA, Kalkur TS. High-Quality-Factor and Low-Temperature-Dependence SMR FBAR Based on BST Using MOD Method. Ieee Transactions On Ultrasonics, Ferroelectrics, and Frequency Control. 64: 452-462. PMID 27875220 DOI: 10.1109/Tuffc.2016.2630690  0.468
2016 Mansour AA, Kalkur TS. Switchable and Tunable BAW Duplexer Based on Ferroelectric Material. Ieee Transactions On Ultrasonics, Ferroelectrics, and Frequency Control. 63: 2224-2230. PMID 27913334 DOI: 10.1109/Tuffc.2016.2614941  0.447
2016 Kalkur TS, Mansour A, Hmeda M, Alpay P, Sbrockey N, Tompa GS. Tunable and switchable bulk acoustic resonator with graded BST composition Integrated Ferroelectrics. 173: 113-118. DOI: 10.1080/10584587.2016.1185884  0.46
2016 Sbrockey NM, Kalkur TS, Mansour A, Khassaf H, Yu H, Aindow M, Alpay SP, Tompa GS. Switchable and tunable film bulk acoustic resonator fabricated using barium strontium titanate active layer and Ta2O5/SiO2 acoustic reflector Applied Physics Letters. 109. DOI: 10.1063/1.4960361  0.419
2016 Webb KM, Kalkur TS. Compensation of self-heating-induced timing errors in bipolar comparators Microelectronics Journal. 47: 31-39. DOI: 10.1016/j.mejo.2015.10.017  0.46
2014 Alzahrani S, Kalkur T. BST capacitor based tunable matching network for SAWSensors Integrated Ferroelectrics. 157: 114-121. DOI: 10.1080/10584587.2014.912558  0.318
2014 Aldeeb H, Kalkur TS. Tunable dual band filter with BST capacitors Integrated Ferroelectrics. 157: 95-100. DOI: 10.1080/10584587.2014.912109  0.373
2014 Khassaf H, Khakpash N, Sun F, Sbrockey NM, Tompa GS, Kalkur TS, Alpay SP. Strain engineered barium strontium titanate for tunable thin film resonators Applied Physics Letters. 104. DOI: 10.1063/1.4879281  0.35
2013 Kabir A, Kalkur TS. Spread-spectrum clock generation with ferroelectric capacitor-tuned VCOs. Ieee Transactions On Ultrasonics, Ferroelectrics, and Frequency Control. 60: 1638-45. PMID 25004536 DOI: 10.1109/Tuffc.2013.2746  0.37
2013 Hmeda MG, Kalkur TS. Tunable patch antenna with BST capacitors Integrated Ferroelectrics. 141: 112-119. DOI: 10.1080/10584587.2013.780140  0.33
2013 Aldeeb H, Kalkur TS. Tunable coplanar wave guide band stop filters Integrated Ferroelectrics. 141: 105-111. DOI: 10.1080/10584587.2013.780138  0.362
2013 Subramanyam G, Cole MW, Sun NX, Kalkur TS, Sbrockey NM, Tompa GS, Guo X, Chen C, Alpay SP, Rossetti GA, Dayal K, Chen LQ, Schlom DG. Challenges and opportunities for multi-functional oxide thin films for voltage tunable radio frequency/microwave components Journal of Applied Physics. 114. DOI: 10.1063/1.4827019  0.428
2012 Kalkur TS, Sbrockey N, Tompa G. MOD deposited BST film based thin tunable film bulk acoustic resonator (TFBAR) E-Journal of Surface Science and Nanotechnology. 10: 558-560. DOI: 10.1380/Ejssnt.2012.558  0.467
2012 Sbrockey NM, Tompa GS, Kalkur TS, Zhang J, Alpay SP, Cole MW. Voltage induced acoustic resonance in metal organic chemical vapor deposition SrTiO3 thin film Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.4757129  0.46
2012 Kalkur TS, Sbrockey N, Tompa GS. MOD deposited thin film BST based bulk acoustic wave resonators Proceedings of 2012 21st Ieee Int. Symp. On Applications of Ferroelectrics Held Jointly With 11th Ieee European Conference On the Applications of Polar Dielectrics and Ieee Pfm, Isaf/Ecapd/Pfm 2012. DOI: 10.1109/ISAF.2012.6297726  0.311
2011 Pavunny SP, Thomas R, Kalkur TS, Schubert J, Fachini E, Katiyar RS. Fabrication and electrical characterization of high-k LaGdO3 thin films and field effect transistors Ecs Transactions. 35: 297-304. DOI: 10.1149/13568872  0.313
2011 Kalkur TS, Sbrockey N, Tompa GS, Cole MW. Tunable RF filters fabricated using MOCVD deposited graded composition BST films Integrated Ferroelectrics. 126: 28-33. DOI: 10.1080/10584587.2011.574978  0.447
2011 Sbrockey NM, Cole MW, Kalkur TS, Luong M, Spanier JE, Tompa GS. MOCVD growth of compositionally graded BaxSr 1-xTiO3 thin films Integrated Ferroelectrics. 126: 21-27. DOI: 10.1080/10584587.2011.574975  0.421
2011 Pavunny SP, Thomas R, Murari NM, Schubert J, Niessen V, Luptak R, Kalkur TS, Katiyar RS. Structural and electrical properties of lanthanum gadolinium oxide: Ceramic and thin films for high-k application Integrated Ferroelectrics. 125: 44-52. DOI: 10.1080/10584587.2011.574039  0.448
2011 Kabir A, Kalkur TS. Spread spectrum clock generation using ferroelectric capacitors Integrated Ferroelectrics. 125: 36-43. DOI: 10.1080/10584587.2011.574037  0.33
2011 Kalkur TS, Zhang Y. Adaptive electronics with ferroelectric capacitors Integrated Ferroelectrics. 125: 29-35. DOI: 10.1080/10584587.2011.574036  0.384
2010 Zhang Y, Kalkur T. Analysis of distortion in tunable ferroelectric capacitors Ieee Transactions On Ultrasonics, Ferroelectrics, and Frequency Control. 57: 1263-1266. DOI: 10.1109/Tuffc.2010.1546  0.387
2009 Lin C, Kalkur TS. Modeling of current crowding for on-chip multi turn differential -spiral inductors Ieee Eurocon 2009, Eurocon 2009. 178-182. DOI: 10.1109/EURCON.2009.5167627  0.509
2009 Lin C, Kalkur TS, Morin M. A 2.4GHz common-gate LNA using on-chip differential inductors in a 0.18μm CMOS technology Conielecomp 2009 - 19th International Conference On Electronics Communications and Computers. 183-188. DOI: 10.1109/CONIELECOMP.2009.35  0.497
2009 Zhang Y, Kalkur TS, Mulcahy T. Ferroelectric capacitor based adaptive matching network for RF amplifier Integrated Ferroelectrics. 112: 60-66. DOI: 10.1080/10584587.2009.484691  0.375
2009 Kalkur TS, Sbrockey NM, Tompa GS, Alpay P, Spanier JE, Galow EM, Cole MW. Low voltage tunable band pass filters using barium strontium titanate parallel plate capacitors Integrated Ferroelectrics. 112: 1-7. DOI: 10.1080/10584587.2009.484656  0.397
2009 Kalkur TS, Sbrockey NM, Tompa GS, Alpay SP. Design and simulation of tunable Ka band filters with graded barium strontium titanate (BST) varactors Integrated Ferroelectrics. 111: 50-58. DOI: 10.1080/10584581003590926  0.348
2008 Rahman M, Lojek B, Kalkur T. Simulation of Capacitance-Voltage characteristics of Ultra-thin Metal-Oxide-Semiconductor Structures with Embedded Nanocrystals Mrs Proceedings. 1071. DOI: 10.1557/Proc-1071-F02-11  0.35
2008 Kabir A, Jamil A, Zhang Y, Kalkur TS. Voltage controlled oscillators with ferroelectric capacitors 2008 Ieee International Frequency Control Symposium, Fcs. 414-417. DOI: 10.1109/FREQ.2008.4623030  0.309
2007 Pauls G, Kalkur TS. PLL jitter reduction by utilizing a ferroelectric capacitor as a VCO timing element. Ieee Transactions On Ultrasonics, Ferroelectrics, and Frequency Control. 54: 1096-102. PMID 17571808 DOI: 10.1109/Tuffc.2007.363  0.373
2007 Jamil A, Kalkur TS, Cramer N. Tunable ferroelectric capacitor-based voltage-controlled oscillator. Ieee Transactions On Ultrasonics, Ferroelectrics, and Frequency Control. 54: 222-6. PMID 17328320 DOI: 10.1109/Tuffc.2007.314503  0.401
2007 Pauls G, Kalkur TS. Jitter analysis and prediction for phase locked loops utilizing ferroelectric capacitors Integrated Ferroelectrics. 93: 10-20. DOI: 10.1080/10584580701755468  0.376
2007 Afreen N, Kalkur TS. Matching networks implemented with high-k capacitors for high frequency amplifiers Integrated Ferroelectrics. 93: 3-9. DOI: 10.1080/10584580701755385  0.426
2006 Kalkur TS, Whitescarver J, Cramer N. Electrical characteristics of BaxSr1-xTiO3(BST) capacitors implemented with Ti-Al electrodes Materials Research Society Symposium Proceedings. 928: 130-135. DOI: 10.1557/Proc-0928-Gg14-10  0.448
2006 Mahmud A, Kalkur TS, Jamil A, Cramer N. A 1-GHz active phase shifter with a ferroelectric varactor Ieee Microwave and Wireless Components Letters. 16: 261-263. DOI: 10.1109/Lmwc.2006.873529  0.395
2006 Mahmud A, Kalkur TS, Jamil A, Cramer N. Design, modeling and characterization of an active phase shifter using a ferroelectric capacitor Integrated Ferroelectrics. 81: 197-205. DOI: 10.1080/10584580600660462  0.396
2006 Dalton D, Gnadinger F, Klingensmith D, Olariu V, Kalkur T, Rahman M, Mahmud A. Ferroelectric charge transfer device using polarization-assisted tunneling for single transistor nonvolatile memories Integrated Ferroelectrics. 81: 187-196. DOI: 10.1080/10584580600660454  0.352
2006 Kalkur TS, D'Amico M, Pauls G. Polarization switching analog to digital converter Integrated Ferroelectrics. 81: 181-186. DOI: 10.1080/10584580600660405  0.351
2006 Pauls G, Kalkur TS. Parameterized ferroelectric capacitor macromodel suitable for mixed signal circuit design applications Integrated Ferroelectrics. 81: 165-179. DOI: 10.1080/10584580600660397  0.426
2006 Jamil A, Kalkur TS, Cramer N. Voltage-controlled oscillator design using ferroelectric varactors Integrated Ferroelectrics. 81: 157-163. DOI: 10.1080/10584580600660348  0.386
2006 Kim D, Killingensmith D, Dalton D, Olariu V, Gnadinger F, Rahman M, Mahmud A, Kalkur TS. Ferroelectric properties of YMnO3 films deposited by metalorganic chemical vapor deposition on Pt/Ti/SiO2/Si substrates Materials Letters. 60: 295-297. DOI: 10.1016/J.Matlet.2005.08.045  0.433
2005 Sun S, Kalkur TS. Polarization-switching D/A converter. Ieee Transactions On Ultrasonics, Ferroelectrics, and Frequency Control. 52: 837-43. PMID 16048185 DOI: 10.1109/Tuffc.2005.1503970  0.395
2005 Mahmud A, Kalkur TS, Cramer N. RF magnetron sputtered Ba 0.96Ca 0.04Ti 0.84Zr 0.16O 3 thin films for high frequency applications Materials Research Society Symposium Proceedings. 833: 3-9. DOI: 10.1557/Proc-833-G1.2  0.471
2005 Rahman M, Kalkur TS, Sun S, Gnadinger FP, Dalton D, Kim D, Olariu V, Klingensmith D. Characterization of MFMIS and MFIS structures for non-volatile memory applications Materials Research Society Symposium Proceedings. 830: 133-139. DOI: 10.1557/Proc-830-D3.2  0.428
2005 Kim JK, Kalkur TS. High-speed current-mode logic amplifier using positive feedback and feed-forward source-follower techniques for high-speed CMOS I/O buffer Ieee Journal of Solid-State Circuits. 40: 796-802. DOI: 10.1109/Jssc.2005.843629  0.325
2005 Cramer N, Mahmud A, Kalkur TS. Effect of annealing on leakage current in Ba 0.5Sr 0.5 TiO 3 and Ba 0.96Ca 0.04 Ti 0.84Zr 0.16O 3 thin films with Pt electrodes Applied Physics Letters. 87. DOI: 10.1063/1.1990250  0.419
2004 Sun S, Kalkur TS. Modeling of charge switching in ferroelectric capacitors. Ieee Transactions On Ultrasonics, Ferroelectrics, and Frequency Control. 51: 786-93. PMID 15300997 DOI: 10.1109/Tuffc.2004.1320737  0.393
2004 Cramer N, Philofsky E, Kammerdiner L, Kalkur TS. Low temperature sputter deposition of Ba 0.96Ca 0.04Ti 0.84Zr 0.16O 3 thin films on Ni electrodes Materials Research Society Symposium Proceedings. 811: 261-266. DOI: 10.1557/Proc-811-D8.5  0.43
2004 Sun S, Kalkur TS. A 9-bit bipolar polarization-switching digital-to-analog converter based on ferroelectric capacitors Integrated Ferroelectrics. 67: 213-220. DOI: 10.1080/10584580490899217  0.356
2004 Kim D, Klingensmith D, Dalton D, Olariu V, Gnadinger F, Rahman M, Mahmud A, Kalkur TS. C-axis oriented MOCVD YMnO 3 thin film and its electrical characteristics in MFIS FeTRAM Integrated Ferroelectrics. 68: 75-84. DOI: 10.1080/10584580490895671  0.428
2004 Cramer N, Philofsky E, Kammerdiner L, Kalkur TS. Vector network analyzer characterization of parallel plate capacitors with high-K dielectrics Integrated Ferroelectrics. 66: 171-178. DOI: 10.1080/10584580490895040  0.374
2004 Jamil A, Kalkur TS, Cramer N. Verilog-A modeling of ferroelectric high-K capacitors for tunable circuit applications Integrated Ferroelectrics. 66: 163-170. DOI: 10.1080/10584580490895013  0.404
2004 Mahmud A, Kalkur TS, Jamil A, Cramer N. A tunable active phase shifter using a thin film ferroelectric capacitor Integrated Ferroelectrics. 66: 153-161. DOI: 10.1080/10584580490895004  0.381
2004 Cramer N, Philofsky E, Kammerdiner L, Kalkur TS. Low temperature deposited Ba 0.96Ca 0.04Ti 0.84Zr 0.16O 3 thin films on Pt electrodes by radio frequency magnetron sputtering Applied Physics Letters. 84: 771-773. DOI: 10.1063/1.1645313  0.437
2003 Cramer N, Philofsky E, Kammerdiner L, Kalkur TS. Low temperature deposition of Ba 0.96Ca 0.04Ti 0.84Zr 0.16O 3 thin films on Pt electrodes by RF magnetron sputtering Materials Research Society Symposium - Proceedings. 784: 375-380. DOI: 10.1557/Proc-784-C8.15  0.432
2003 Sbrockey NM, Cuchiaro JD, Provost LG, Rice CE, Sun S, Tompa GS, DeLeon RL, Kalkur TS. Laser annealing of ferroelectric SrBi2Ta2O 9, Pb(ZrxTi1-x)O3 and CeMnO 3 thin films Materials Research Society Symposium - Proceedings. 784: 157-162. DOI: 10.1557/Proc-784-C11.43  0.318
2003 Cramer N, Kalkur TS, Philofsky E, Kammerdiner L. Leakage Current and Dielectric Properties of Ba 0.5Sr 0.5TiO 3 Films Deposited by RF Sputtering at Low Substrate Temperature Materials Research Society Symposium - Proceedings. 768: 51-56. DOI: 10.1557/Proc-768-G3.6  0.423
2003 Cramer N, Kalkur TS, Philofsky E, Kammerdiner L. An Equivalent Circuit Model for Ba0.5Sr0.5TiO3-Based Capacitors Integrated Ferroelectrics. 58: 1395-1402. DOI: 10.1080/714040797  0.445
2003 Cramer N, Kalkur TS, Philofsky E, Kammerdiner L. Dielectric Properties of Ba0.5Sr0.5TiO3 Thin Films from DC to Ka Band Integrated Ferroelectrics. 53: 413-420. DOI: 10.1080/714040690  0.431
2003 Cramer N, Kalkur TS, Philofsky E, Kammerdiner L. An equivalent circuit model for Ba 0.5Sr 0.5TiO 3-based capacitors Integrated Ferroelectrics. 58: 1395-1402. DOI: 10.1080/10584580390259894  0.445
2003 Mocaluk G, Kalkur TS. A 1.8 v 4 k FeRAM chip using 0.2 u process and novel design techniques Integrated Ferroelectrics. 56: 1151-1160. DOI: 10.1080/10584580390259849  0.334
2003 Shunming S, Kalkur TS. A proposed architecture for polarization-switching D/A converter (PDAC) Integrated Ferroelectrics. 56: 1141-1149. DOI: 10.1080/10584580390259812  0.372
2003 Kalkur TS, Cotey C, Kuan C, Shunming S. Tunable voltage-controlled oscillator (VCO) with high dielectric constant BCTZ capacitors Integrated Ferroelectrics. 56: 1123-1129. DOI: 10.1080/10584580390259768  0.446
2003 Cramer N, Kalkur TS, Philofsky E, Kammerdiner L. Dielectric properties of Ba 0.5Sr 0.5TiO 3 thin films from DC to Ka band Integrated Ferroelectrics. 53: 413-420. DOI: 10.1080/10584580390258417  0.326
2003 Kalkur TS, Yi WC, Philofsky E, Kammerdiner L. Dielectric properties and tunability of Mg-doped Ba0.96Ca 0.04Ti0.84Zr0.16O3 thin films on Pt/MgO fabricated by metal organic decomposition method Materials Letters. 57: 4147-4150. DOI: 10.1016/S0167-577X(03)00280-5  0.429
2002 Kalkur TS, Yi WC, Philofsky E, Kammerdiner L. Dielectric and room temperature tunable properties of Mg-doped Ba0.96 Ca0.04 Ti 0.84Zr 0.16O3 thin films on Pt/MgO Materials Research Society Symposium - Proceedings. 720: 169-174. DOI: 10.1557/Proc-716-B2.8  0.438
2002 Sun S, Kalkur TS. Modeling of ferroelectric switching excited by triangular or sinusoidal voltage signals Integrated Ferroelectrics. 48: 79-87. DOI: 10.1080/713718321  0.361
2002 Kalkur TS, Yi WC. Dielectric and tunable properties of B 0.96 Ca 0.04Ti 0.84Zr 0.16O 3 (BCTZ) on MgO and SiO 2/Si substrates Integrated Ferroelectrics. 45: 123-129. DOI: 10.1080/10584580215365  0.416
2002 Yi WC, Kalkur TS, Philofsky E, Kammerdiner L. Structural and dielectric properties of Ba0.7Sr0.3TiO3 thin films grown on thin Bi layer-coated Pt(111)/Ti/SiO2/Si substrates Thin Solid Films. 402: 307-310. DOI: 10.1016/S0040-6090(01)01611-X  0.397
2002 Kalkur TS, Yi WC, Philofsky E, Kammerdiner L. Dielectric and room temperature tunable properties of Mg-DOPED Ba0.96 Ca0.04 Ti0.84 Zr0.16 O3 thin films on Pt/MgO Materials Research Society Symposium - Proceedings. 716: 97-102.  0.328
2001 Yi WC, Kalkur TS, Philofsky E, Kammerdiner L. Electrical characteristics of doped and undoped high dielectric constant BCTZ thin films Materials Research Society Symposium - Proceedings. 666. DOI: 10.1557/Proc-666-F5.3  0.458
2001 Kalkur TS, Yi WC, Philofsky E, Kammerdiner L, Rywak T. Electrical characteristics of high dielectric constant BCTZ thin films Integrated Ferroelectrics. 38: 289-295. DOI: 10.1080/10584580108016942  0.448
2001 Kalkur TS, Sun S. Characteristics of charge pumps based on high dielectric constanet material capacitors Integrated Ferroelectrics. 38: 279-288. DOI: 10.1080/10584580108016941  0.316
2001 Kalkur TS, Lindsey J. Electrical characteristics of Pt-SBT-polysilicon (MFIP) capacitors with yttrium oxide as the buffer layer Integrated Ferroelectrics. 34. DOI: 10.1080/10584580108012884  0.408
2001 Yi WC, Kalkur TS, Philofsky E, Kammerdiner L, Rywak AA. Dielectric properties of Mg-doped Ba0.96Ca0.04Ti0.84Zr0.16O 3 thin films fabricated by metalorganic decomposition method Applied Physics Letters. 78: 3517-3519. DOI: 10.1063/1.1375002  0.411
2000 Lindsey JR, Kalkur TS. Capacitance Voltage Characteristics of Polysilicon–Polysilicon Oxide–Polysilicon Structures for Three-Dimensional Memory Mrs Proceedings. 609. DOI: 10.1557/Proc-609-A29.2  0.305
1998 Lim MH, Kalkur TS, Kim YT. Strontium bismuth tantalate based ferroelectric gate field effect transistor with yttrium oxide as the buffer layer Materials Research Society Symposium - Proceedings. 493: 465-470. DOI: 10.1557/Proc-493-465  0.376
1998 Lee HN, Lim M, Kim YT, Kalkur TS, Choh SH. Characteristics of Metal/Ferroelectric/Insulator/Semiconductor Field Effect Transistors Using a Pt/SrBi2Ta2O9/Y2O3/Si Structure Japanese Journal of Applied Physics. 37: 1107-1109. DOI: 10.1143/Jjap.37.1107  0.426
1998 Lim M, Kalkur TS. The role of leakge current on the memory window and memory retention in MFIS structure Integrated Ferroelectrics. 22: 205-211. DOI: 10.1080/10584589808208042  0.343
1998 Lee HN, Lim MH, Kim YT, Kalkur TS, Choh SH. Characteristics of metal/ferroelectric/insulator/semiconductor field effect transistors using a Pt/SrBi2Ta2O9/Y2O3/Si structure Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 37: 1107-1109.  0.319
1997 Lee HN, Kim YT, Lee CW, Lim M, Kalkur TS. Fabrication of Metal-Ferroelectric-Insulator-Semiconductor Field Effect Transistor (MEFISFET) Using Pt-SrBi2Ta2O9-Y2O3-Si Structure The Japan Society of Applied Physics. 1997: 382-383. DOI: 10.7567/Ssdm.1997.C-10-4  0.327
1997 Lim M, Kalkur TS. Electrical characteristics of PT-bismuth strontium tantalate(BST)-p-Si with zirconium oxide buffer layer Integrated Ferroelectrics. 14: 247-257. DOI: 10.1080/10584589708019998  0.444
1997 Lim M, Kalkur TS. The role of buffer layer in strontium bismuth tantalate based ferroelectric gate mos structures for non-volatile non destructive read out memory applications Integrated Ferroelectrics. 17: 433-441. DOI: 10.1080/10584589708013017  0.436
1995 Kalkur TS, Liang S, Lu Y, Chern CS. Electrical characteristics of mocvd deposited Ba1-xSrxTiO3/ YBa2Cu3O7-x ON LaAlO3 Substrate Integrated Ferroelectrics. 11: 129-136. DOI: 10.1080/10584589508013585  0.46
1994 Zhang S, Kalkur TS, Lee S, Gatza L. A Delay Model and Optimization Method of a LowPower BiCMOS Logic Circuit Ieee Journal of Solid-State Circuits. 29: 1191-1199. DOI: 10.1109/4.315202  0.368
1994 Zhang S, Kalkur TS, Lee S, Chen D. Analysis of the Switching Speed of BiCMOS Buffer Under High Current Ieee Journal of Solid-State Circuits. 29: 787-796. DOI: 10.1109/4.303716  0.347
1994 Kalkur TS. Characteristics of barium magnesium fluoride (BMF) based MIS capacitors and MFSFETS Integrated Ferroelectrics. 4: 357-364. DOI: 10.1080/10584589408223881  0.44
1994 Chen DY, Gregory J, Kalkur TS, Paz De Araujo CA, McMillan LD, Rabson TA. Modeling of metal-ferroelectric-semiconductor field effect transistor subthreshold current Integrated Ferroelectrics. 5: 265-274. DOI: 10.1080/10584589408017020  0.349
1994 Kalkur TS, Jacobs B, Argos G. Characteristics of ferroelectric gate mos and mosfets Integrated Ferroelectrics. 5: 177-184. DOI: 10.1080/10584589408017010  0.474
1993 Huffman M, Kalkur TS, Kammerdiner L, Kwor R, Levenson LL, Reeder M. Properties of ferroelectric PbTiO3 films grown in an ionized cluster beam system Journal of Vacuum Science and Technology. 11: 1406-1410. DOI: 10.1116/1.578562  0.38
1992 Kalkur TS, Wright PD, Ko SK, Lu YC, Casas L, Jones KA. Ti/Pt Based Contacts to Heterojunction Bipolar Transistors Mrs Proceedings. 260. DOI: 10.1557/Proc-260-549  0.338
1992 Kalkur TS, Kulkarni JR, Kwor RY, Levinson L, Kammerdiner L. Metal-Ferroelectric-Semiconductor Characteristics of BaMgF 4 Films on p-Silicon Mrs Proceedings. 230. DOI: 10.1557/Proc-230-315  0.453
1992 Kalkur TS, Kwor RY, Levenson L, Kammerdiner L. Electrical characteristics of aluminum-zirconium oxidebarium magnesium fluoride-p silicon mis capacitors Integrated Ferroelectrics. 2: 327-336. DOI: 10.1080/10584589208215752  0.446
1992 Kalkur TS, Lu YC. Electrical characteristics of ZrO2-based metal-insulator-semiconductor structures on p-Si Thin Solid Films. 207: 193-196. DOI: 10.1016/0040-6090(92)90122-R  0.419
1991 Huffman M, Kalkur TS, Kammerdiner L, Kwor R, Levenson LL, Reeder M. Characteristics of Palladium Thin Films Deposited by the Ionized Cluster Beam Technique Mrs Proceedings. 239: 75. DOI: 10.1557/Proc-239-75  0.316
1991 Kalkur TS, Kulkarni J, Lu YC, Rowe M, Han W, Kammerdiner L. Metal-ferroelectric-semiconductor characteristics of bismuth titanate films on silicon Ferroelectrics. 116: 135-146. DOI: 10.1080/00150199108007937  0.411
1991 Byrne DP, Kwor RY, Kalkur TS. Field variation of the rf penetration depth and its effect on kinetic inductance in Bi2Sr2CaCu2Ox microstrip transmission lines Journal of Applied Physics. 69: 6693-6695. DOI: 10.1063/1.348887  0.402
1991 Kalkur TS, Lu YC. Characteristics of rapidly thermally annealed RuO2 films on SiO2 Thin Solid Films. 205: 266-269. DOI: 10.1016/0040-6090(91)90312-L  0.401
1990 Kalkur TS, Lu YC, Rowe M. Mn–In–Co, Mn–Pt and Mn–In–Pt Based Contacts to p–GaAs Mrs Proceedings. 181. DOI: 10.1557/Proc-181-247  0.304
1990 Li BZ, Aiken RG, Daneshvar K, Kwor RY, Kalkur TS. Hall effect of the high-Tc superconducting Bi-Sr-Ca-Cu-O thin film Journal of Applied Physics. 68: 218-222. DOI: 10.1063/1.347119  0.322
1990 Kalkur TS, Kwor RY, Byrne D. Effect of an SiO2 layer on the superconductive properties of the high-Tc Bi-Sr-Ca-Cu-O films Journal of Applied Physics. 67: 918-920. DOI: 10.1063/1.345725  0.419
1990 Kalkur TS, Lu YC. Erbium-oxide-based metal-insulator-semiconductor structures on silicon Thin Solid Films. 188: 203-211. DOI: 10.1016/0040-6090(90)90283-J  0.375
1990 Kalkur TS, Lu YC. Schottky contacts on rapidly thermally annealed GaAs Thin Solid Films. 187: 19-24. DOI: 10.1016/0040-6090(90)90106-N  0.348
1989 Kalkur T, Lu Y, Caracciolo R. Mo—In—Mn Based Ohmic Contact to P—GaAs Mrs Proceedings. 146. DOI: 10.1557/Proc-146-437  0.313
1984 Dell J, Kalkur TS, Meglicki Z, Nassibian AG, Hartnagel HL. AuGeNi migration affected by operating conditions of GaAs FETs Solid State Electronics. 27: 447-452. DOI: 10.1016/0038-1101(84)90151-5  0.346
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