| Year |
Citation |
Score |
| 2013 |
Kang Y, Fortmann CM. An alternative approach to protein folding. Biomed Research International. 2013: 583045. PMID 24078920 DOI: 10.1155/2013/583045 |
0.56 |
|
| 2012 |
Magsi K, Lee P, Kang Y, Bhattacharya S, Fortmann CM. Enhanced chlorophyll A purification and dye sensitized solar cell performance Materials Research Society Symposium Proceedings. 1390: 15-20. DOI: 10.1557/Opl.2012.797 |
0.774 |
|
| 2012 |
Magsi K, Lee P, Kang Y, Fortmann CM. Energy relay dye dynamics with highly purified chlorophyll A as photo-sensitizer Materials Research Society Symposium Proceedings. 1448: 1-6. DOI: 10.1557/Opl.2012.1504 |
0.776 |
|
| 2012 |
Lee P, Shank J, Magsi K, Kang Y, Fortmann CM. Optical layers and materials for next generation solar cells Materials Research Society Symposium Proceedings. 1323: 59-63. DOI: 10.1557/Opl.2011.822 |
0.803 |
|
| 2012 |
Lee P, Dahal SN, Magsi K, Kang Y, Fortmann CM. Raman-based strategies for improved solar cell optics Conference Record of the Ieee Photovoltaic Specialists Conference. 2559-2562. DOI: 10.1109/PVSC.2012.6318117 |
0.788 |
|
| 2011 |
Magsi K, Lee R, Shank J, Kang Y, Fortmann CM. Exploring the limits of phosphor-based spectral management for photovoltaic applications Materials Research Society Symposium Proceedings. 1322: 113-118. DOI: 10.1557/Opl.2011.1299 |
0.793 |
|
| 2011 |
Lee P, Shank J, Magsi K, Kang Y, Fortmann CM. Crystal particle Raman-scattering and applications for improved solar cell performance Applied Physics Letters. 99. DOI: 10.1063/1.3665942 |
0.807 |
|
| 2009 |
Kang Y, Fortmann CM. Physical Markov model for protein structure prediction Proceedings - 2009 Ieee International Conference On Bioinformatics and Biomedicine Workshops, Bibmw 2009. 356. DOI: 10.1109/BIBMW.2009.5332075 |
0.497 |
|
| 2008 |
Chawda SG, Mawyin JA, Halada GP, Fortmann CM. Phononic engineered materials and devices Journal of Non-Crystalline Solids. 354: 2548-2551. DOI: 10.1016/J.Jnoncrysol.2007.10.075 |
0.74 |
|
| 2008 |
Mawyin JA, Chawda SG, Halada GP, Clayton CR, Tonucci RJ, Fortmann CM. Substrate engineering for high efficiency thin film solar cells Journal of Non-Crystalline Solids. 354: 2492-2494. DOI: 10.1016/J.Jnoncrysol.2007.09.109 |
0.759 |
|
| 2007 |
Kang Y, Fortmann CM. A structural basis for the Hodgkin and Huxley relation Applied Physics Letters. 91. DOI: 10.1063/1.2815650 |
0.544 |
|
| 2006 |
Chawda S, Mawyin J, Mahan H, Fortmann C, Halada G. Phononic Amorphous Silicon: Theory, Material, and Devices Mrs Proceedings. 910. DOI: 10.1557/Proc-0910-A05-06 |
0.752 |
|
| 2006 |
Kang Y, Jaen E, Fortmann CM. Einstein relations for energy coupled particle systems Applied Physics Letters. 88. DOI: 10.1063/1.2181195 |
0.589 |
|
| 2006 |
Fortmann CM, Mawyin J, Tonucci RJ, Mahan AH. Photonic amorphous silicon device technology Thin Solid Films. 501: 350-353. DOI: 10.1016/J.Tsf.2005.07.149 |
0.508 |
|
| 2005 |
Halada GP, Chawda S, Mawyin J, Tonucci RJ, Mahan AH, Fortmann CM. Advances in amorphous silicon integrated photonics science and technology Materials Research Society Symposium Proceedings. 862: 387-392. |
0.352 |
|
| 2003 |
Fortmann CM, Mahan AH, Ward S, Anderson WA, Tonucci R, Hata N. Hot-wire photonics: Materials, science, and technology Thin Solid Films. 430: 278-282. DOI: 10.1016/S0040-6090(03)00134-2 |
0.51 |
|
| 2003 |
Fortmann CM, Tonucci RJ, Anderson WA, Teplin CW, Mahan AH. Advances in thin film photonics: Materials, science and technology Proceedings of Spie - the International Society For Optical Engineering. 5206: 14-23. |
0.384 |
|
| 2002 |
Fortmann CM, Hata N. High-speed light induced photo refractive change in hydrogenated amorphous silicon Proceedings of Spie - the International Society For Optical Engineering. 4803: 1-10. DOI: 10.1117/12.452634 |
0.465 |
|
| 2002 |
Fortmann CM, Mahan AH, Hata N. Advances in amorphous silicon-based photonic technology Journal of Non-Crystalline Solids. 299: 1267-1271. DOI: 10.1016/S0022-3093(01)01148-6 |
0.528 |
|
| 2001 |
Fortmann CM, Jaen EL, Anderson WA, Mahan AH, Hata N. Progress in deposited refractive index engineered materials and devices Proceedings of Spie - the International Society For Optical Engineering. 4459: 10-19. DOI: 10.1117/12.454017 |
0.8 |
|
| 2001 |
Sato H, Fukutani K, Futako W, Kamiya T, Fortmann CM, Shimizu I. High-quality narrow gap (approximately 1.52 eV) a-Si:H with improved stability fabricated by excited inert gas treatment Solar Energy Materials and Solar Cells. 66: 321-327. DOI: 10.1016/S0927-0248(00)00190-2 |
0.31 |
|
| 2001 |
Shimizu S, Komaru T, Okawa K, Azuma M, Kamiya T, Fortmann CM, Shimizu I. Properties of amorphous silicon solar cells fabricated from SiH2Cl2 Solar Energy Materials and Solar Cells. 66: 289-295. DOI: 10.1016/S0927-0248(00)00186-0 |
0.314 |
|
| 2001 |
Fortmann CM, Jaen EL, Hata N, Anderson WA, Mahan AH. Hot-wire deposition of photonic-grade amorphous silicon Thin Solid Films. 395: 142-146. DOI: 10.1016/S0040-6090(01)01239-1 |
0.783 |
|
| 2001 |
Hata N, Fortmann CM, Matsuda A. Fast light-induced change in ellipsometry spectra of hydrogenated amorphous silicon measured through a transparent substrate upon bias light illumination Materials Research Society Symposium - Proceedings. 664. |
0.347 |
|
| 2001 |
Hata N, Fortmann CM, Matsuda A. Changes in hydrogenated amorphous silicon upon extensive light-soaking at elevated temperature Materials Research Society Symposium - Proceedings. 664. |
0.331 |
|
| 2000 |
Fortmann CM, Jaen EL, Hata N. Prospects of amorphous silicon-based photonic networks Proceedings of Spie - the International Society For Optical Engineering. 4110: 195-203. DOI: 10.1117/12.404781 |
0.797 |
|
| 2000 |
Hata N, Fortmann CM. The emergence of an amorphous-silicon based photonic technology; Optical memories to 3-D photonic crystals Materials Research Society Symposium - Proceedings. 609. |
0.426 |
|
| 2000 |
Kamiya T, Komaru T, Shimizu S, Kanbe M, Fortmann CM, Shimizu I. Transparent conductive oxide for solar cells having resistance to high density hydrogen plasma and/or high temperature Key Engineering Materials. 105-108. |
0.301 |
|
| 2000 |
Futako W, Kamiya T, Fortmann CM, Shimizu I. The structure of 1.5-2.0 eV band gap amorphous silicon films prepared by chemical annealing Journal of Non-Crystalline Solids. 266: 630-634. |
0.331 |
|
| 2000 |
Hata N, Stradins P, Fortmann CM, Fujiwara H, Kondo M, Matsuda A. Light-induced, reversible, above-gap, optical changes in hydrogenated amorphous silicon films Journal of Non-Crystalline Solids. 266: 491-495. |
0.419 |
|
| 1999 |
Fortmann CM, Jaen EL. Prospects for 3-D photonic crystals engineered from hydrogenated amorphous silicon Proceedings of Spie - the International Society For Optical Engineering. 3801: 24-35. |
0.788 |
|
| 1999 |
Shimizu S, Okawa K, Kamiya T, Fortmann CM, Shimizu I. Amorphous silicon solar cells techniques for reactive conditions Materials Research Society Symposium - Proceedings. 557: 791-796. |
0.304 |
|
| 1999 |
Shimizu S, Komaru T, Okawa K, Azuma M, Kamiya T, Fortmann CM, Shimizu I. Fabrication of solar cells having SiH2Cl2 based I-layer materials Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 38: 6617-6623. |
0.305 |
|
| 1999 |
Futako W, Yoshino K, Fortmann CM, Shimizu I. Wide band gap amorphous silicon thin films prepared by chemical annealing Journal of Applied Physics. 85: 812-818. |
0.311 |
|
| 1998 |
Fortmann CM. Random phononic structure and indirect optical transitions: An explanation for the hydrogen dependence of the amorphous silicon band gap? Physical Review Letters. 81: 3683-3686. |
0.31 |
|
| 1998 |
Futako W, Takeoka S, Fortmann CM, Shimizu I. Fabrication of narrow-band-gap hydrogenated amorphous silicon by chemical annealing Journal of Applied Physics. 84: 1333-1339. |
0.322 |
|
| 1997 |
Winz K, Fortmann CM, Eickhoff T, Beneking C, Wagner H, Fujiwara H, Shimizu I. Novel light-trapping schemes involving planar junctions and diffuse rear reflectors for thin-film silicon-based solar cells Solar Energy Materials and Solar Cells. 49: 195-203. DOI: 10.1016/S0927-0248(97)00195-5 |
0.518 |
|
| 1997 |
Winz K, Fortmann CM, Eickhoff T, Wagner H. Optical optimization of a-Si:H solar cells using planar junctions and diffuse rear reflectors Conference Record of the Ieee Photovoltaic Specialists Conference. 723-726. |
0.366 |
|
| 1997 |
Futako W, Fukutani K, Kannbe M, Kamiya T, Fortmann CM, Shimizu I. Progress in growth of high quality amorphous silicon materials Conference Record of the Ieee Photovoltaic Specialists Conference. 581-586. |
0.343 |
|
| 1996 |
Winz K, Rech B, Eickhoff T, Beneking C, Fortmann CM, Hapke P, Wagner H. Optoelectronic properties of thin amorphous and micro-crystalline p-type films developed for amorphous silicon-based solar cells Materials Research Society Symposium - Proceedings. 420: 819-824. DOI: 10.1557/Proc-420-819 |
0.394 |
|
| 1996 |
Futako W, Shimizu I, Fortmann CM. Modulation of growing surface with atomic hydrogen and excited argon to fabricate narrow gap a-Si:H Materials Research Society Symposium - Proceedings. 420: 431-436. DOI: 10.1557/Proc-420-431 |
0.342 |
|
| 1996 |
Fortmann CM, Hapke P, Lambertz A, Finger F. Low temperature hydrogen induced amorphous to crystalline silicon phase transformations Materials Research Society Symposium - Proceedings. 420: 283-288. DOI: 10.1557/Proc-420-283 |
0.341 |
|
| 1996 |
Fortmann CM, Shimizu I. Prospects for utilizing low temperature amorphous to crystalline phase transformation to define circuit elements; a new frontier for very large scale integrated technology Journal of Non-Crystalline Solids. 198: 1146-1150. DOI: 10.1016/0022-3093(96)00101-9 |
0.377 |
|
| 1996 |
Futako W, Yoshino K, Nakamura K, Fortmann CM, Shimizu I. Fabrication of high quality silicon related films with band-gap of 1.5 eV by chemical annealing Journal of Non-Crystalline Solids. 198: 1046-1049. DOI: 10.1016/0022-3093(96)00037-3 |
0.383 |
|
| 1996 |
Winz K, Fortmann CM, Eickhoff T, Beneking C, Rech B, Kluth O, Wagner H. Smooth TCO/glass substrates and diffuse rear reflectors for efficient low cost amorphous silicon-based solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 1149-1152. |
0.407 |
|
| 1995 |
Fortmann CM. Stress and the goal of improved amorphous silicon stability Materials Research Society Symposium - Proceedings. 377: 355-360. DOI: 10.1557/Proc-377-355 |
0.364 |
|
| 1995 |
Liu H, Malone CT, Fortmann CM, Wronski CR. Analysis of non-uniform creation of light-induced defects in Schottky barrier solar cell structures Materials Research Society Symposium - Proceedings. 377: 687-692. |
0.313 |
|
| 1993 |
Fortmann CM, Fisher D. Mobility, recombination, and solar cell performance Conference Record of the Ieee Photovoltaic Specialists Conference. 966-970. |
0.333 |
|
| 1993 |
Dawson RMA, Fortmann CM, Gunes M, Li YM, Nag SS, Wronski CR. Transport considerations in hydrogenated amorphous silicon materials with widely varying mobilities and the consequences on device performance Conference Record of the Ieee Photovoltaic Specialists Conference. 1005-1010. |
0.329 |
|
| 1992 |
Fortmann CM. Analytical modelling of thin amorphous silicon-germanium solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 2: 1265-1268. |
0.323 |
|
| 1991 |
Fortmann CM, Hegedus SS, Zhou TX, Baron BN. Hydrogen content and the goal of stable efficient amorphous-silicon-based solar cells Solar Cells. 30: 255-260. DOI: 10.1016/0379-6787(91)90057-V |
0.327 |
|
| 1988 |
Fortmann CM, Lange S, Hicks M, Wronski CR. Effect of light-induced defects on the short wavelength quantum efficiencies of amorphous silicon solar cell structures Journal of Applied Physics. 64: 4219-4222. DOI: 10.1063/1.342485 |
0.363 |
|
| Low-probability matches (unlikely to be authored by this person) |
| 1999 |
Kambe M, Yamamoto Y, Fukutani K, Kamiya T, Fortmann CM, Shimizu I. Narrow band gap amorphous silicon-based solar cells prepared by high temperature processing Materials Research Society Symposium - Proceedings. 507: 205-210. |
0.298 |
|
| 1998 |
Futako W, Kamiya T, Fortmann CM, Shimizu I. Photoconductivity gain over 10 at a large electric field in wide gap a-Si:H Journal of Non-Crystalline Solids. 227: 220-224. |
0.295 |
|
| 1999 |
Futako W, Sugawara T, Kamiya T, Fortmann CM, Shimizu I. Wide band gap a-Si:H based high gain vidicon devices prepared by chemical annealing Materials Research Society Symposium - Proceedings. 507: 357-362. |
0.289 |
|
| 1998 |
Fukutani K, Kanbe M, Futako W, Kaplan B, Kamiya T, Fortmann CM, Shimizu I. Band gap tuning of a-Si:H from 1.55 eV to 2.10 eV by intentionally promoting structural relaxation Journal of Non-Crystalline Solids. 227: 63-67. |
0.288 |
|
| 1999 |
Fukutani K, Sugawara T, Futako W, Kamiya T, Fortmann CM, Shimizu I. Extremely narrow band gap, approximately 1.50 eV, amorphous silicon Materials Research Society Symposium - Proceedings. 507: 211-216. |
0.288 |
|
| 1999 |
Kanbe M, Komaru T, Fukutani K, Kamiya T, Fortmann CM, Shimizu I. Amorphous silicon solar cell techniques for high temperature and/or reactive deposition conditions Materials Research Society Symposium - Proceedings. 557: 767-772. |
0.287 |
|
| 1993 |
Dawson RMA, Fortmann CM, Gunes M, Li YM, Nag SS, Collins RW, Wronski CR. Effects of microstructure on transport properties of undoped hydrogenated amorphous silicon films Applied Physics Letters. 63: 955-957. DOI: 10.1063/1.109856 |
0.285 |
|
| 1988 |
Fortmann CM, Tu JC. Defects in amorphous silicon germanium alloys Conference Record of the Ieee Photovoltaic Specialists Conference. 1: 139-142. |
0.285 |
|
| 1988 |
Carlson DE, Arya RR, Bennett MS, Catalano A, D'Aiello RC, Dickson CR, Fortmann CM, Goldstein B, Morris J, Newton JL, Wiedeman S. Progress toward high efficiency multijunction cells and submodules at Solarex Solar Cells. 24: 165-169. DOI: 10.1016/0379-6787(88)90046-4 |
0.284 |
|
| 1994 |
Lu Y, Kim S, Chen IS, Lee Y, Fortmann CM, Wronski CR, Collins RW. Real time characterization of the preparation of amorphous silicon-based solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 1: 421-424. |
0.278 |
|
| 1999 |
Yamamoto Y, Futako W, Fukutani K, Hagino M, Sugawara T, Kamiya T, Fortmann CM, Shimizu I. Stable solar cells prepared from dichlorosilane Materials Research Society Symposium - Proceedings. 507: 199-204. |
0.278 |
|
| 1992 |
Cohen JD, Unold T, Gelatos AV, Fortmann CM. Deep defect structure and carrier dynamics in amorphous silicon and silicon-germanium alloys determined by transient photocapacitance methods Journal of Non-Crystalline Solids. 141: 142-154. DOI: 10.1016/S0022-3093(05)80528-9 |
0.273 |
|
| 1999 |
Komaru T, Shimizu S, Kanbe M, Maeda Y, Kamiya T, Fortmann CM, Shimizu I. Optimization of transparent conductive oxide for improved resistance to reactive and/or high temperature optoelectronic device processing Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 38: 5796-5804. |
0.267 |
|
| 1996 |
Dawson RMA, Fortmann CM. The Staebler-Wronski effect and the thermal equilibration of defect and free carrier concentrations Journal of Applied Physics. 79: 3075-3081. |
0.267 |
|
| 1993 |
Fortmann CM, Fischer D. Relationship among mobility, recombination kinetics, and optimized solar cell performance Applied Physics Letters. 62: 3147-3149. DOI: 10.1063/1.109110 |
0.264 |
|
| 1989 |
Fortmann CM, Hegedus SS, Buchanan WA. Design considerations for low band gap a-Sige:H alloy solar cells Journal of Non-Crystalline Solids. 115: 21-23. DOI: 10.1016/0022-3093(89)90348-7 |
0.258 |
|
| 1993 |
Fortmann CM, Dawson RMA, Gunes M, Wronski CR. Amorphous silicon dispersive transport considerations for analysis of films and solar cells Journal of Non-Crystalline Solids. 164: 509-512. DOI: 10.1016/0022-3093(93)90601-S |
0.253 |
|
| 1994 |
Gunes M, Liu H, Fortmann CM, Wronski CR. Direct correlations of bulk charged and neutral defect densities of states in a-Si:H films with characteristics of Schottky barrier solar cell structures Conference Record of the Ieee Photovoltaic Specialists Conference. 1: 512-515. |
0.252 |
|
| 1999 |
Kamiya T, Nakahata K, Ro K, Fortmann CM, Shimizu I. High rates and very low temperature fabrication of polycrystalline silicon from fluorinated source gas and their transport properties Materials Research Society Symposium - Proceedings. 557: 513-518. |
0.251 |
|
| 1998 |
Nakahata K, Miida A, Kamiya T, Maeda Y, Fortmann CM, Shimizu I. Control of orientation for polycrystalline silicon thin films fabricated from fluorinated source gas by microwave plasma enhanced chemical vapor deposition Japanese Journal of Applied Physics, Part 2: Letters. 37. |
0.249 |
|
| 1994 |
Fortmann CM, Dawson RM, Liu HY, Wronski CR. Charge-defect thermodynamic equilibrium and metastable defects in amorphous silicon Journal of Applied Physics. 76: 768-772. DOI: 10.1063/1.357779 |
0.248 |
|
| 2000 |
Kamiya T, Nakahata K, Sameshima T, Ro K, Suemasu A, Fortmann CM, Shimizu I. Growth and tRansport property of polycrystalline silicon fabricated with intentional orientation control on glass Key Engineering Materials. 125-128. |
0.245 |
|
| 2000 |
Ro K, Nakahata K, Kamiya T, Fortmann CM, Shimizu I. Microstructure and photovoltaic properties of low temperature polycrystalline silicon solar cells fabricated by VHF-GD CVD using fluorinated gas Journal of Non-Crystalline Solids. 266: 1088-1093. |
0.245 |
|
| 2001 |
Komaru T, Sato H, Futako W, Kamiya T, Fortmann CM, Shimizu I. Improved p-i-n solar cells structure for narrow bandgap a-Si:H prepared by Ar* chemical annealing at high temperatures Solar Energy Materials and Solar Cells. 66: 329-335. DOI: 10.1016/S0927-0248(00)00191-4 |
0.245 |
|
| 2000 |
Kamiya T, Nakahata K, Suemasu A, Ro K, Fortmann CM, Shimizu I. Transport properties of polycrystalline silicon with various textures and microstructures Materials Research Society Symposium - Proceedings. 609. |
0.243 |
|
| 1993 |
Fischer D, Wyrsch N, Fortmann CM, Shah AV. Amorphous silicon solar cells with graded low-level doped i-layers characterised by bifacial measurements Conference Record of the Ieee Photovoltaic Specialists Conference. 878-884. |
0.242 |
|
| 1990 |
Fortmann CM. a-SiGe:H alloy material limitations and device considerations Conference Record of the Ieee Photovoltaic Specialists Conference. 2: 1493-1500. |
0.241 |
|
| 2001 |
Matsuura D, Kamiya T, Fortmann CM, Simizu I. Microstructure control of very thin polycrystalline silicon layers on glass substrate by plasma enhanced CVD Solar Energy Materials and Solar Cells. 66: 305-311. DOI: 10.1016/S0927-0248(00)00188-4 |
0.235 |
|
| 1993 |
Gunes M, Li YM, Dawson RMA, Fortmann CM, Wronski CR. Investigation of intrinsic defect states in hydrogenated amorphous silicon films using steady-state photoconductivity and sub-bandgap absorption Conference Record of the Ieee Photovoltaic Specialists Conference. 885-890. |
0.235 |
|
| 1999 |
Kamiya T, Nakahata K, Kazuyoshi RO, Fortmann CM, Shimizu I. Comparison of Microstructure and Crystal Structure of Polycrystalline Silicon Exhibiting Varied Textures Fabricated by Microwave and Very High Frequency Plasma Enhanced Chemical Vapor Deposition and Their Transport Properties Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 38: 5750-5756. |
0.234 |
|
| 1999 |
Nakahata K, Miida A, Kamiya T, Fortmann CM, Shimizu I. Carrier transport, structure and orientation in polycrystalline silicon on glass Thin Solid Films. 337: 45-50. |
0.233 |
|
| 1994 |
Unold T, Cohen JD, Fortmann CM. Electronic mobility gap structure and deep defects in amorphous silicon-germanium alloys Applied Physics Letters. 64: 1714-1716. DOI: 10.1063/1.111814 |
0.229 |
|
| 2001 |
Suemasu A, Nakahata K, Ro K, Kamiya T, Fortmann CM, Shimizu I. In situ hydrogen plasma treatment for improved transport of (4 0 0) oriented polycrystalline silicon films Solar Energy Materials and Solar Cells. 66: 313-320. DOI: 10.1016/S0927-0248(00)00189-6 |
0.227 |
|
| 2000 |
Nakahata K, Kamiya T, Fortmann CM, Shimizu I, Stuchlíková H, Fejfar A, Kočka J. Anisotropic carrier transport in preferentially oriented polycrystalline silicon films fabricated by very-high-frequency plasma enhanced chemical vapor deposition using fluorinated source gas Journal of Non-Crystalline Solids. 266: 341-346. |
0.227 |
|
| 1999 |
Kamiya T, Maeda Y, Nakahata K, Komaru T, Fortmann CM, Shimizu I. Effect of halogen on the structure of low temperature polycrystalline silicon thin films fabricated on glass substrates Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan. 107: 1099-1104. |
0.224 |
|
| 1990 |
Albright DE, Saxena N, Fortmann CM, Rocheleau RE, Russell TWF. Mercury‐sensitized photochemical vapor deposition of amorphous silicon Aiche Journal. 36: 1555-1561. DOI: 10.1002/aic.690361011 |
0.221 |
|
| 1994 |
Suntharalingam V, Fortmann CM, Fonash SJ, Rubinelli FA. P/I interface layer in amorphous silicon solar cells; a numerical modeling study Conference Record of the Ieee Photovoltaic Specialists Conference. 1: 618-621. |
0.221 |
|
| 2001 |
Ohkawa K, Shimizu S, Sato H, Komaru T, Futako W, Kamiya T, Fortmann CM, Shimizu I. Stability of a-Si:H solar cells deposited by Ar-treatment or by ECR techniques Solar Energy Materials and Solar Cells. 66: 297-303. DOI: 10.1016/S0927-0248(00)00187-2 |
0.215 |
|
| 1987 |
Fortmann CM, Lange S, Farley M, O'Dowd JG. HIGH EFFICIENCY SOLAR CELLS OF a-Si:H, a-Si//xC//1// minus //x AND a-Si//yGe//1// minus //y STABILITY AND STRUCTURE AS A FUNCTION OF GROWTH RATE Conference Record of the Ieee Photovoltaic Specialists Conference. 296-301. |
0.213 |
|
| 1999 |
Kamiya T, Nakahata K, Miida A, Fortmann CM, Shimizu I. Control of orientation from random to (220) or (400) in polycrystalline silicon films Thin Solid Films. 337: 18-22. |
0.201 |
|
| 1999 |
Kamiya T, Ro K, Fortmann CM, Shimizu I. Role of Seed Crystal Layer in Two-Step-Growth Procedure for Low Temperature Growth of Polycrystalline Silicon Thin Film from SiF4 by a Remote-Type Microwave Plasma Enhanced Chemical Vapor Deposition Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 38: 5762-5767. |
0.2 |
|
| 1989 |
Fortmann CM, Zhou TX, Buchanan WA. The relationship between hydrogen content, weak bond density and Staebler-Wronski defects in amorphous silicon Journal of Non-Crystalline Solids. 114: 624-626. DOI: 10.1016/0022-3093(89)90670-4 |
0.196 |
|
| 1994 |
He D, Okada N, Fortmann CM, Shimizu I. Carrier transport in polycrystalline silicon films deposited by a layer-by-layer technique Journal of Applied Physics. 76: 4728-4733. DOI: 10.1063/1.357240 |
0.192 |
|
| 2000 |
Nakahata K, Ro K, Suemasu A, Kamiya T, Fortmann CM, Shimizu I. Fabrication of polycrystalline silicon films from SiF4/H2/SiH4 gas mixture using very high frequency plasma enhanced chemical vapor deposition with in situ plasma diagnostics and their structural properties Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 39: 3294-3301. |
0.189 |
|
| 1999 |
Kamiya T, Nakahata K, Ro K, Tohti J, Fortmann CM, Shimizu I. Structure control of polycrystalline silicon films on glass substrates and their properties Key Engineering Materials. 169: 171-174. |
0.183 |
|
| 2000 |
Kamiya T, Nakahata K, Fortmann CM, Shimizu I. Structural properties of polycrystalline silicon films having varied textures fabricated with intentional control of surface reactions using SiF4/H2/SiH4 mixing gas Journal of Non-Crystalline Solids. 266: 120-124. |
0.18 |
|
| 1987 |
Fortmann CM, Fahrenbruch AL, Bube RH. Relative carrier densities and trap effects on the properties of CdS/CdTe Journal of Applied Physics. 61: 2038-2045. DOI: 10.1063/1.338002 |
0.177 |
|
| 1991 |
Fauchet PM, Young DA, Nighan WL, Fortmann CM. Picosecond Carrier Dynamics in aSi0.5Ge0 5: H Measured with a Free-Electron Laser Ieee Journal of Quantum Electronics. 27: 2714-2717. DOI: 10.1109/3.104152 |
0.175 |
|
| 1991 |
Unold T, Cohen JD, Fortmann CM. Density of states and carrier dynamics in amorphous silicon germanium alloys and amorphous germanium Journal of Non-Crystalline Solids. 137: 809-812. DOI: 10.1016/S0022-3093(05)80243-1 |
0.175 |
|
| 1989 |
Saxena N, Albright DE, Fortmann CM, Fraser Russell TW, Fauchet PM, Campbell IH. Temperature dependence of H radical etching in the deposition of microcrystalline silicon alloy thin films by HG-sensitized photo-CVD Journal of Non-Crystalline Solids. 114: 801-803. DOI: 10.1016/0022-3093(89)90725-4 |
0.174 |
|
| 1991 |
Fortmann CM, Dawson RM, Wronski CR. Charge-defect equilibrium description of metastable defect concentrations Journal of Non-Crystalline Solids. 137: 207-210. DOI: 10.1016/S0022-3093(05)80092-4 |
0.16 |
|
| 1994 |
Fortmann CM. Atomic vibration mediated electronic transport in amorphous silicon Applied Physics Letters. 64: 3024-3026. DOI: 10.1063/1.111975 |
0.141 |
|
| Hide low-probability matches. |