Year |
Citation |
Score |
2012 |
Xu L, Patel D, Menoni CS, Pikal JM, Yeh JY, Huang JYT, Mawst LJ, Tansu N. Carrier recombination dynamics investigations of strain-compensated InGaAsN quantum wells Ieee Photonics Journal. 4: 2382-2389. DOI: 10.1109/Jphot.2012.2233465 |
0.678 |
|
2012 |
Xu L, Patel D, Menoni CS, Yeh JY, Mawst LJ, Tansu N. Experimental evidence of the impact of nitrogen on carrier capture and escape times in InGaAsN/GaAs Single quantum well Ieee Photonics Journal. 4: 2262-2271. DOI: 10.1109/Jphot.2012.2230251 |
0.699 |
|
2011 |
Xu L, Patel D, Menoni CS, Yeh JY, Mawst LJ, Tansu N. Investigation of the carrier escape and capture processes in InGaAsN quantum well lasers Ieee Photonic Society 24th Annual Meeting, Pho 2011. 682-683. DOI: 10.1109/Pho.2011.6110733 |
0.732 |
|
2008 |
Mawst LJ, Huang JYT, Xu DP, Yeh JY, Tsvid G, Kuech TF, Tansu N. MOCVD-grown dilute nitride type II quantum wells Ieee Journal On Selected Topics in Quantum Electronics. 14: 979-991. DOI: 10.1109/Jstqe.2008.918105 |
0.747 |
|
2006 |
Yeh JY, Mawst LJ, Khandekar AA, Kuech TF, Vurgaftman I, Meyer JR, Tansu N. Long wavelength emission of InGaAsNGaAsSb type II "w" quantum wells Applied Physics Letters. 88: 1-3. DOI: 10.1063/1.2171486 |
0.719 |
|
2005 |
Yeh JY, Mawst LJ, Tansu N. The role of carrier transport on the current injection efficiency of InGaAsN quantum-well lasers Ieee Photonics Technology Letters. 17: 1779-1781. DOI: 10.1109/Lpt.2005.852331 |
0.706 |
|
2005 |
Anton OH, Patel D, Menoni CS, Yeh JY, Van Roy TT, Mawst LJ, Pikal JM, Tansu N. Frequency response of strain-compensated InGaAsN-GaAsP-GaAs SQW lasers Ieee Journal On Selected Topics in Quantum Electronics. 11: 1079-1088. DOI: 10.1109/Jstqe.2005.853845 |
0.658 |
|
2005 |
Shterengas L, Belenky GL, Yeh JY, Mawst LJ, Tansu N. Differential gain and linewidth-enhancement factor in dilute-nitride GaAs-based 1.3-/spl mu/m diode lasers Ieee Journal On Selected Topics in Quantum Electronics. 11: 1063-1068. DOI: 10.1109/Jstqe.2005.853736 |
0.713 |
|
2005 |
Palmer DJ, Smowton PM, Blood P, Yeh JY, Mawst LJ, Tansu N. Effect of nitrogen on gain and efficiency in InGaAsN quantum-well lasers Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1868070 |
0.715 |
|
2004 |
Chang YH, Kuo HC, Chang YA, Tsai MY, Wang SC, Tansu N, Yeh J, Mawst LJ. Temperature dependent photoluminescence of highly strained InGaAsN/GaAs Quantum Well ( λ=1.28-1.45 μm) with GaAsP strain-compensated layer The Japan Society of Applied Physics. 2004: 82-83. DOI: 10.7567/Ssdm.2004.F-1-2 |
0.672 |
|
2004 |
Yeh JY, Tansu N, Mawst LJ. Temperature-Sensitivity Analysis of 1360-nm Dilute-Nitride Quantum-Well Lasers Ieee Photonics Technology Letters. 16: 741-743. DOI: 10.1109/Lpt.2004.823715 |
0.712 |
|
2004 |
Tansu N, Yeh JY, Mawst LJ. Physics and characteristics of high performance 1200 nm InGaAs and 1300-1400 nm InGaAsN quantum well lasers obtained by metal-organic chemical vapour deposition Journal of Physics Condensed Matter. 16. DOI: 10.1088/0953-8984/16/31/020 |
0.73 |
|
2004 |
Yeh JY, Mawst LJ, Tansu N. Characteristics of InGaAsN/GaAsN quantum well lasers emitting in the 1.4-μm regime Journal of Crystal Growth. 272: 719-725. DOI: 10.1016/J.Jcrysgro.2004.09.005 |
0.738 |
|
2003 |
Tansu N, Yeh JY, Mawst LJ. High-Performance 1200-nm InGaAs and 1300-nm InGaAsN Quantum-Well Lasers by Metalorganic Chemical Vapor Deposition Ieee Journal On Selected Topics in Quantum Electronics. 9: 1220-1227. DOI: 10.1109/Jstqe.2003.820911 |
0.73 |
|
2003 |
Tansu N, Yeh JY, Mawst LJ. Experimental evidence of carrier leakage in InGaAsN quantum-well lasers Applied Physics Letters. 83: 2112-2114. DOI: 10.1063/1.1611279 |
0.743 |
|
2003 |
Tansu N, Yeh JY, Mawst LJ. Extremely low threshold-current-density InGaAs quantum-well lasers with emission wavelength of 1215-1233 nm Applied Physics Letters. 82: 4038-4040. DOI: 10.1063/1.1581978 |
0.75 |
|
2003 |
Tansu N, Yeh JY, Mawst LJ. Improved photoluminescence of InGaAsN-(In)GaAsP quantum well by organometallic vapor phase epitaxy using growth pause annealing Applied Physics Letters. 82: 3008-3010. DOI: 10.1063/1.1572470 |
0.705 |
|
2001 |
Ivanisevic A, Yeh JY, Mawst L, Kuech TF, Ellis AB. Light-emitting diodes as chemical sensors. Nature. 409: 476. PMID 11206534 DOI: 10.1038/35054131 |
0.454 |
|
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