Year |
Citation |
Score |
2020 |
Mohaddes F, da Silva R, Akbulut F, Zhou Y, Tanneeru A, Lobaton E, Lee B, Misra V. A Pipeline for Adaptive Filtering and Transformation of Noisy Left-Arm ECG to Its Surrogate Chest Signal Electronics. 9: 866. DOI: 10.3390/Electronics9050866 |
0.447 |
|
2020 |
Azam F, Tanneeru A, Lee B, Misra V. Engineering a Unified Dielectric Solution for AlGaN/GaN MOS-HFET Gate and Access Regions Ieee Transactions On Electron Devices. 67: 881-887. DOI: 10.1109/Ted.2020.2969394 |
0.617 |
|
2019 |
Yang X, Lee B, Misra V. Effects of LaSiOx Thickness and Forming Gas Anneal Temperature on Threshold Voltage Instability of 4H-SiC MOSFETs With LaSiOx Ieee Transactions On Electron Devices. 66: 539-545. DOI: 10.1109/Ted.2018.2875094 |
0.611 |
|
2018 |
Yang X, Lee B, Misra V. Improvement of Threshold Voltage Reliability of 4H-SiC MOSFETs With Lanthanum Silicate by High Temperature Forming Gas Anneal Ieee Electron Device Letters. 39: 244-247. DOI: 10.1109/Led.2017.2785851 |
0.611 |
|
2018 |
Lim M, Mills S, Lee B, Misra V. Investigation of O3 Adsorption on Ultra-Thin ALD SnO2 by QCM Ieee Sensors Journal. 18: 3590-3594. DOI: 10.1109/Jsen.2018.2815698 |
0.482 |
|
2018 |
Jiang Y, Sung W, Baliga J, Wang S, Lee B, Huang A. Electrical Characteristics of 10-kV 4H-SiC MPS Rectifiers with High Schottky Barrier Height Journal of Electronic Materials. 47: 927-931. DOI: 10.1007/S11664-017-5812-2 |
0.479 |
|
2017 |
Sarkar B, Mills S, Lee B, Pitts WS, Misra V, Franzon PD. On Using the Volatile Mem-Capacitive Effect of TiO2 Resistive Random Access Memory to Mimic the Synaptic Forgetting Process Journal of Electronic Materials. 47: 994-997. DOI: 10.1007/S11664-017-5914-X |
0.547 |
|
2016 |
Kim DE, Kang MJ, Park GR, Lee BJ, Kwon YS, Shin HK. White OLED in Hybrid Structure for Enhancing Color Purity. Journal of Nanoscience and Nanotechnology. 16: 6374-7. PMID 27427721 DOI: 10.1166/jnn.2016.12131 |
0.303 |
|
2016 |
Dieffenderfer J, Goodell H, Mills S, McKnight M, Yao S, Lin F, Beppler E, Bent B, Lee B, Misra V, Zhu Y, Oralkan O, Strohmaier J, Muth J, Peden D, et al. Low Power Wearable Systems for Continuous Monitoring of Environment and Health for Chronic Respiratory Disease. Ieee Journal of Biomedical and Health Informatics. PMID 27249840 DOI: 10.1109/Jbhi.2016.2573286 |
0.477 |
|
2016 |
Lee D, Yoon J, Lee J, Lee BH, Seol ML, Bae H, Jeon SB, Seong H, Im SG, Choi SJ, Choi YK. Logic circuits composed of flexible carbon nanotube thin-film transistor and ultra-thin polymer gate dielectric. Scientific Reports. 6: 26121. PMID 27184121 DOI: 10.1038/Srep26121 |
0.374 |
|
2016 |
Singamaneni SR, Prater J, Lee B, Misra V, Narayan J. Memristive behavior in
BaTiO3/La0.7Sr0.3MnO3
heterostructures integrated with semiconductors Mrs Advances. 1: 275-280. DOI: 10.1557/Adv.2016.70 |
0.629 |
|
2016 |
Yang X, Lee B, Misra V. Electrical Characteristics of SiO2 Deposited by Atomic Layer Deposition on 4H-SiC after Nitrous Oxide Anneal Ieee Transactions On Electron Devices. 63: 2826-2830. DOI: 10.1109/Ted.2016.2565665 |
0.658 |
|
2016 |
Ramanan N, Lee B, Misra V. Physical understanding of trends in current collapse with atomic layer deposited dielectrics in AlGaN/GaN MOS heterojunction FETs Semiconductor Science and Technology. 31. DOI: 10.1088/0268-1242/31/3/035016 |
0.794 |
|
2015 |
Mills S, Lim M, Lee B, Misra V. Atomic Layer Deposition of SnO2 for selective room temperature low ppb level O3 sensing Ecs Journal of Solid State Science and Technology. 4: S3059-S3061. DOI: 10.1149/2.0111510Jss |
0.574 |
|
2015 |
Lim M, Mills S, Lee B, Misra V. Application of AlGaN/GaN heterostructures for ultra-low power nitrogen dioxide sensing Ecs Journal of Solid State Science and Technology. 4: S3034-S3037. DOI: 10.1149/2.0101510Jss |
0.496 |
|
2015 |
Yang X, Lee B, Misra V. Investigation of Lanthanum Silicate Conditions on 4H-SiC MOSFET Characteristics Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2015.2480047 |
0.627 |
|
2015 |
Ramanan N, Lee B, Misra V. Comparison of methods for accurate characterization of interface traps in GaN MOS-HFET devices Ieee Transactions On Electron Devices. 62: 546-553. DOI: 10.1109/Ted.2014.2382677 |
0.802 |
|
2015 |
Yang X, Lee B, Misra V. High Mobility 4H-SiC Lateral MOSFETs Using Lanthanum Silicate and Atomic Layer Deposited SiO2 Ieee Electron Device Letters. 36: 312-314. DOI: 10.1109/Led.2015.2399891 |
0.65 |
|
2015 |
Ramanan N, Lee B, Misra V. ALD gate dielectrics for improved threshold voltage stability in AlGaN/GaN MOS-HFETs for power applications Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/12/125017 |
0.836 |
|
2015 |
Sarkar B, Lee B, Misra V. Understanding the gradual reset in Pt/Al2O3/Ni RRAM for synaptic applications Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/10/105014 |
0.565 |
|
2015 |
Ramanan N, Lee B, Misra V. Accurate characterization and understanding of interface trap density trends between atomic layer deposited dielectrics and AlGaN/GaN with bonding constraint theory Applied Physics Letters. 106. DOI: 10.1063/1.4922799 |
0.819 |
|
2015 |
Singamaneni SR, Prater JT, Nori S, Kumar D, Lee B, Misra V, Narayan J. Ferroelectric and magnetic properties of multiferroic BiFeO3-La0.7Sr0.3MnO3 heterostructures integrated with Si (100) Journal of Applied Physics. 117. DOI: 10.1063/1.4913811 |
0.59 |
|
2014 |
Ramanan N, Lee B, Misra V. Device modeling for understanding AlGaN/GaN HEMT gate-lag Ieee Transactions On Electron Devices. 61: 2012-2018. DOI: 10.1109/Ted.2014.2313814 |
0.797 |
|
2014 |
Sarkar B, Ramanan N, Jayanti S, Spigna ND, Lee B, Franzon P, Misra V. Dual floating gate unified memory MOSFET with simultaneous dynamic and non-volatile operation Ieee Electron Device Letters. 35: 48-50. DOI: 10.1109/Led.2013.2289751 |
0.764 |
|
2014 |
Kirkpatrick C, Lee B, Ramanan N, Misra V. Flash MOS-HFET operational stability for power converter circuits Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 875-878. DOI: 10.1002/Pssc.201300547 |
0.804 |
|
2013 |
Lee B, Choi YH, Kirkpatrick C, Huang AQ, Misra V. Improved high-temperature device transport properties and off-state characteristics of AlGaN/GaN power devices with atomic layer deposition (ALD) HfAlO high-k dielectric Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/7/074016 |
0.788 |
|
2013 |
Ramanan N, Lee B, Kirkpatrick C, Suri R, Misra V. Properties of atomic layer deposited dielectrics for AlGaN/GaN device passivation Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/7/074004 |
0.808 |
|
2012 |
Lee B, Novak SR, Biswas N, Misra V. The Role of Rare Earth Metals on Effective Work Function Modulation of Nickel Fully-Silicided Gate/High-$k$ Dielectric Stacks for n-Channel Metal Oxide Semiconductor Device Applications Japanese Journal of Applied Physics. 51: 011802. DOI: 10.1143/Jjap.51.011802 |
0.826 |
|
2012 |
Kirkpatrick CJ, Lee B, Suri R, Yang X, Misra V. Atomic layer deposition of SiO 2 for AlGaN/GaN MOS-HFETs Ieee Electron Device Letters. 33: 1240-1242. DOI: 10.1109/Led.2012.2203782 |
0.839 |
|
2012 |
Kaushal V, Íñiguez-De-La-Torre I, Gonzalez T, Mateos J, Lee B, Misra V, Margala M. Effects of a high-k dielectric on the performance of III-V ballistic deflection transistors Ieee Electron Device Letters. 33: 1120-1122. DOI: 10.1109/Led.2012.2197669 |
0.68 |
|
2012 |
Lee B, Kirkpatrick C, Choi YH, Yang X, Huang AQ, Misra V. Normally-off AlGaN/GaN MOSHFET using ALD SiO 2 tunnel dielectric and ALD HfO 2 charge storage layer for power device application Physica Status Solidi (C) Current Topics in Solid State Physics. 9: 868-870. DOI: 10.1002/Pssc.201100422 |
0.788 |
|
2012 |
Kirkpatrick C, Lee B, Choi Y, Huang A, Misra V. Threshold voltage stability comparison in AlGaN/GaN FLASH MOS-HFETs utilizing charge trap or floating gate charge storage Physica Status Solidi (C) Current Topics in Solid State Physics. 9: 864-867. DOI: 10.1002/Pssc.201100421 |
0.752 |
|
2011 |
Lee B, Lichtenwalner DJ, Novak SR, Misra V. Impact of AlTaO Dielectric Capping on Device Performance and Reliability for Advanced Metal Gate/High-$k$ PMOS Application Ieee Transactions On Electron Devices. 58: 2928-2935. DOI: 10.1109/Ted.2011.2160064 |
0.818 |
|
2011 |
Lee B, Novak SR, Lichtenwalner DJ, Yang X, Misra V. Investigation of the Origin of $V_{T}/V_{\rm FB}$ Modulation by $\hbox{La}_{2}\hbox{O}_{3}$ Capping Layer Approaches for NMOS Application: Role of La Diffusion, Effect of Host High- $k$ Layer, and Interface Properties Ieee Transactions On Electron Devices. 58: 3106-3115. DOI: 10.1109/Ted.2011.2159306 |
0.812 |
|
2011 |
Jeff RC, Yun M, Ramalingam B, Lee B, Misra V, Triplett G, Gangopadhyay S. Charge storage characteristics of ultra-small Pt nanoparticle embedded GaAs based non-volatile memory Applied Physics Letters. 99: 072104. DOI: 10.1063/1.3625426 |
0.629 |
|
2011 |
Kirkpatrick C, Lee B, Yang X, Misra V. Performance improvement of AlGaN/GaN high electron mobility transistors with atomic layer deposition (ALD) of SiO2 and HfAlO dielectrics Physica Status Solidi (C). 8: 2445-2447. DOI: 10.1002/Pssc.201001064 |
0.799 |
|
2010 |
Novak S, Lee B, Yang X, Misra V. Platinum Nanoparticles Grown by Atomic Layer Deposition for Charge Storage Memory Applications Journal of the Electrochemical Society. 157: H589. DOI: 10.1149/1.3365031 |
0.795 |
|
2008 |
Suri R, Lee B, Lichtenwalner DJ, Biswas N, Misra V. Electrical characteristics of metal-oxide-semiconductor capacitors on p-GaAs using atomic layer deposition of ultrathin HfAlO gate dielectric Applied Physics Letters. 93: 193504. DOI: 10.1063/1.3007978 |
0.839 |
|
2007 |
Lee B, Biswas N, Novak SR, Misra V. Characteristics of Ni/Gd FUSI for NMOS Gate Electrode Applications Ieee Electron Device Letters. 28: 555-557. DOI: 10.1109/Led.2007.897889 |
0.805 |
|
2007 |
Chen Z, Lee B, Sarkar S, Gowda S, Misra V. A molecular memory device formed by HfO2 encapsulation of redox-active molecules Applied Physics Letters. 91: 173111. DOI: 10.1063/1.2800824 |
0.821 |
|
2006 |
Chen B, Jha R, Lazar H, Biswas N, Lee J, Lee B, Wielunski L, Garfunkel E, Misra V. Influence of oxygen diffusion through capping layers of low work function metal gate electrodes Ieee Electron Device Letters. 27: 228-230. DOI: 10.1109/Led.2006.871184 |
0.779 |
|
Show low-probability matches. |