☰

Fangzhen Wu, Ph.D. - Publications

Affiliations: 
2014 Materials Science and Engineering Stony Brook University, Stony Brook, NY, United States 
Area:
Materials Science Engineering
Tree Info Similar researchers PubMed Report error

21 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Guo J, Yang Y, Wu F, Sumakeris J, Leonard R, Goue O, Raghothamachar B, Dudley M. Synchrotron X-ray topographic study on nature of threading mixed dislocations in 4H-SiC crystals grown by PVT method Journal of Crystal Growth. DOI: 10.1016/J.Jcrysgro.2015.12.028  0.749
2016 Guo J, Yang Y, Wu F, Sumakeris J, Leonard R, Goue O, Raghothamachar B, Dudley M. Direct Determination of Burgers Vectors of Threading Mixed Dislocations in 4H-SiC Grown by PVT Method Journal of Electronic Materials. 1-6. DOI: 10.1007/S11664-015-4317-0  0.757
2015 Wang H, Wu F, Yang Y, Guo J, Raghothamachar B, Venkatesh TA, Dudley M, Zhang J, Chung G, Thomas B, Sanchez EK, Mueller SG, Hansen D, Loboda MJ. Studies of the origins of half loop arrays and interfacial dislocations observed in homoepitaxial layers of 4H-SiC Materials Science Forum. 821: 319-322. DOI: 10.4028/Www.Scientific.Net/Msf.821-823.319  0.708
2014 Zhang J, Hansen DM, Torres VM, Thomas B, Chung G, Makoto H, Manning I, Quast J, Whiteley C, Sanchez EK, Mueller S, Loboda MJ, Wang H, Wu F, Dudley M. Defect reduction paths in SiC epitaxy Materials Research Society Symposium Proceedings. 1693. DOI: 10.1557/Opl.2014.579  0.556
2014 Wu F, Wang H, Raghothamachar B, Dudley M, Mueller SG, Chung G, Sanchez EK, Hansen D, Loboda MJ. Direct observation of stacking fault nucleation from deflected threading dislocations with burgers vector c+a in PVT grown 4H-SiC Materials Research Society Symposium Proceedings. 1693. DOI: 10.1557/Opl.2014.564  0.747
2014 Wu F, Wang H, Raghothamachar B, Dudley M, Mueller SG, Chung G, Sanchez EK, Hansen D, Loboda MJ, Zhang L, Su D, Kisslinger K, Stach E. Erratum: “A method to determine fault vectors in 4H-SiC from stacking sequences observed on high resolution transmission electron microscopy images” [J. Appl. Phys. 116, 104905 (2014)] Journal of Applied Physics. 116: 169901. DOI: 10.1063/1.4899320  0.702
2014 Wu F, Wang H, Raghothamachar B, Dudley M, Mueller SG, Chung G, Sanchez EK, Hansen D, Loboda MJ, Zhang L, Su D, Kisslinger K, Stach E. A method to determine fault vectors in 4H-SiC from stacking sequences observed on high resolution transmission electron microscopy images Journal of Applied Physics. 116. DOI: 10.1063/1.4895136  0.729
2014 Wang H, Wu F, Byrappa S, Raghothamachar B, Dudley M, Wu P, Zwieback I, Souzis A, Ruland G, Anderson T. Synchrotron topography studies of the operation of double-ended Frank-Read partial dislocation sources in 4H-SiC Journal of Crystal Growth. 401: 423-430. DOI: 10.1016/J.Jcrysgro.2014.01.078  0.812
2014 Wu F, Wang H, Raghothamachar B, Dudley M, Chung G, Zhang J, Thomas B, Sanchez EK, Mueller SG, Hansen D, Loboda MJ, Zhang L, Su D, Kisslinger K, Stach E. Characterization of V-shaped Defects in 4H-SiC Homoepitaxial Layers Journal of Electronic Materials. DOI: 10.1007/S11664-014-3536-0  0.764
2014 Zhou T, Raghothamachar B, Wu F, Dalmau R, Moody B, Craft S, Schlesser R, Dudley M, Sitar Z. Characterization of threading dislocations in PVT-grown ALN substrates via x-ray topography and ray tracing simulation Journal of Electronic Materials. 43: 838-842. DOI: 10.1007/S11664-013-2968-2  0.748
2013 Zhou T, Raghothamachar B, Wu F, Dudley M. Grazing incidence X-ray topographic studies of threading dislocations in hydrothermal grown ZnO single crystal substrates Materials Research Society Symposium Proceedings. 1494: 121-126. DOI: 10.1557/Opl.2013.261  0.747
2013 Wang H, Sun S, Dudley M, Byrappa S, Wu F, Raghothamachar B, Chung G, Sanchez EK, Mueller SG, Hansen D, Loboda MJ. Quantitative comparison between dislocation densities in offcut 4H-SiC wafers measured using synchrotron X-ray topography and molten KOH etching Journal of Electronic Materials. 42: 794-798. DOI: 10.1007/S11664-013-2527-X  0.788
2013 Wu F, Wang H, Byrappa S, Raghothamachar B, Dudley M, Wu P, Xu X, Zwieback I. Characterization and formation mechanism of six pointed star-type stacking faults in 4H-SiC Journal of Electronic Materials. 42: 787-793. DOI: 10.1007/S11664-012-2379-9  0.808
2012 Wang H, Byrappa S, Wu F, Raghothamachar B, Dudley M, Sanchez EK, Hansen D, Drachev R, Mueller SG, Loboda MJ. Basal plane dislocation multiplication via the hopping Frank-Read source mechanism and observations of prismatic glide in 4H-SiC Materials Science Forum. 717: 327-330. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.327  0.745
2012 Wang H, Wu F, Byrappa S, Shun S, Raghothamachar B, Dudley M, Sanchez EK, Chung G, Hansen D, Mueller SG, Loboda MJ. Combined application of section and projection topography to defect analysis in PVT-grown 4H-SiC Materials Research Society Symposium Proceedings. 1433: 71-76. DOI: 10.1557/Opl.2012.1142  0.796
2012 Dudley M, Wang H, Wu F, Byrappa S, Shun S, Raghothamachar B, Sanchez EK, Chung G, Hansen D, Mueller SG, Loboda MJ. Synchrotron topography studies of growth and deformation-induced dislocations in 4H-SiC Materials Research Society Symposium Proceedings. 1433: 59-70. DOI: 10.1557/Opl.2012.1141  0.803
2012 Wu F, Byrappa S, Wang H, Chen Y, Raghothamachar B, Dudley M, Sanchez EK, Chung G, Hansen D, Mueller SG, Loboda MJ. Simulation of grazing-incidence synchrotron X-ray topographic images of threading c+a dislocations in 4H-SiC Materials Research Society Symposium Proceedings. 1433: 41-46. DOI: 10.1557/Opl.2012.1050  0.794
2012 Wang H, Wu F, Byrappa S, Sun S, Raghothamachar B, Dudley M, Sanchez EK, Hansen D, Drachev R, Mueller SG, Loboda MJ. Basal plane dislocation multiplication via the Hopping Frank-Read source mechanism in 4H-SiC Applied Physics Letters. 100. DOI: 10.1063/1.4704679  0.793
2012 Müller SG, Sanchez EK, Hansen DM, Drachev RD, Chung G, Thomas B, Zhang J, Loboda MJ, Dudley M, Wang H, Wu F, Byrappa S, Raghothamachar B, Choi G. Volume production of high quality SiC substrates and epitaxial layers: Defect trends and device applications Journal of Crystal Growth. 352: 39-42. DOI: 10.1016/J.Jcrysgro.2011.10.050  0.775
2011 Dudley M, Wu F, Wang H, Byrappa S, Raghothamachar B, Choi G, Sun S, Sanchez EK, Hansen D, Drachev R, Mueller SG, Loboda MJ. Stacking faults created by the combined deflection of threading dislocations of Burgers vector c and c+a during the physical vapor transport growth of 4H-SiC Applied Physics Letters. 98. DOI: 10.1063/1.3597226  0.809
2010 Dudley M, Byrappa S, Wang H, Wu F, Zhang Y, Raghothamachar B, Choi G, Sanchez E, Hansen D, Drachev R, Loboda M. Analysis of Dislocation Behavior in Low Dislocation Density, PVT-Grown, Four-Inch Silicon Carbide Single Crystals Mrs Proceedings. 1246. DOI: 10.1557/Proc-1246-B02-02  0.815
Show low-probability matches.