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Max G. Lagally - Publications

Affiliations: 
1970- Materials Science and Engineering University of Wisconsin, Madison, Madison, WI 
Area:
Condensed Matter Physics, Materials Science Engineering
Website:
https://directory.engr.wisc.edu/mse/Faculty/Lagally_Max/
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Year Citation  Score
2020 Bhat A, Elleuch O, Cui X, Guan Y, Scott S, Kuech TF, Lagally MG. High-Ge-Content SiGe Alloy Single Crystals Using the Nanomembrane Platform. Acs Applied Materials & Interfaces. PMID 32282183 DOI: 10.1021/Acsami.0C02747  0.382
2020 Jaffe GR, Smith KJ, Brar VW, Lagally MG, Eriksson MA. Three-omega thermal-conductivity measurements with curved heater geometries Applied Physics Letters. 117: 073102. DOI: 10.1063/5.0011627  0.338
2020 Neyens SF, Foote RH, Thorgrimsson B, Knapp TJ, McJunkin T, Vandersypen LMK, Amin P, Thomas NK, Clarke JS, Savage DE, Lagally MG, Friesen M, Coppersmith SN, Eriksson MA. Erratum: “The critical role of substrate disorder in valley splitting in Si quantum wells” [Appl. Phys. Lett. 112, 243107 (2018)] Applied Physics Letters. 116: 049901. DOI: 10.1063/1.5144986  0.38
2019 Jacobberger RM, Murray EA, Fortin-Deschênes M, Göltl F, Behn WA, Krebs ZJ, Levesque PL, Savage DE, Smoot C, Lagally MG, Desjardins P, Martel R, Brar V, Moutanabbir O, Mavrikakis M, et al. Alignment of semiconducting graphene nanoribbons on vicinal Ge(001). Nanoscale. PMID 30821309 DOI: 10.1039/C9Nr00713J  0.339
2019 Jaffe GR, Mei S, Boyle CA, Kirch JD, Savage DE, Botez D, Mawst LJ, Knezevic I, Lagally MG, Eriksson MA. Measurements of the Thermal Resistivity of InAlAs, InGaAs and InAlAs/InGaAs Superlattices. Acs Applied Materials & Interfaces. PMID 30807087 DOI: 10.1021/Acsami.8B17268  0.327
2019 Liu F, Wu F, Lagally MG. Effect of Strain on Structure and Morphology of Ultrathin Ge Films on Si(001). Chemical Reviews. 97: 1045-1062. PMID 11851440 DOI: 10.1021/Cr9600722  0.484
2019 Li A, Liu F, Lagally MG. Equilibrium shape of two-dimensional islands under stress Physical Review Letters. 85: 1922-5. PMID 10970648 DOI: 10.1103/Physrevlett.85.1922  0.341
2019 Liu F, Lagally MG. Interplay of stress, structure, and stoichiometry in Ge-covered Si(001). Physical Review Letters. 76: 3156-3159. PMID 10060889 DOI: 10.1103/Physrevlett.76.3156  0.388
2019 Wu F, Lagally MG. Ge-induced reversal of surface stress anisotropy on Si(001). Physical Review Letters. 75: 2534-2537. PMID 10059336 DOI: 10.1103/Physrevlett.75.2534  0.401
2019 Wu F, Chen X, Zhang Z, Lagally M. Reversal of Step Roughness on Ge-Covered Vicinal Si(001). Physical Review Letters. 74: 574-577. PMID 10058792 DOI: 10.1103/Physrevlett.74.574  0.445
2019 Chen X, Wu F, Zhang Z, Lagally MG. Vacancy-vacancy interaction on Ge-covered Si(001). Physical Review Letters. 73: 850-853. PMID 10057555 DOI: 10.1103/Physrevlett.73.850  0.409
2019 Zhang Z, Chen H, Bolding BC, Lagally MG. Vacancy diffusion on Si(100)-(2 x 1). Physical Review Letters. 71: 3677-3680. PMID 10055044 DOI: 10.1103/Physrevlett.71.3677  0.355
2019 Ritz C, Flack F, Savage D, Detert D, Evans P, Lagally M, Cai Z. Ordered Lattices of Quantum Dots on Ultrathin SOI Nanomembranes Ecs Transactions. 6: 321-326. DOI: 10.1149/1.2728877  0.772
2019 Xue X, Watson T, Helsen J, Ward D, Savage D, Lagally M, Coppersmith S, Eriksson M, Wehner S, Vandersypen L. Benchmarking Gate Fidelities in a Si/SiGe Two-Qubit Device Physical Review X. 9. DOI: 10.1103/Physrevx.9.021011  0.313
2018 Paiella R, Lagally MG. Optical Properties of Tensilely Strained Ge Nanomembranes. Nanomaterials (Basel, Switzerland). 8. PMID 29882799 DOI: 10.3390/Nano8060407  0.45
2018 Abadillo-Uriel JC, Thorgrimsson B, Kim D, Smith LW, Simmons CB, Ward DR, Foote RH, Corrigan J, Savage DE, Lagally MG, Calderón MJ, Coppersmith SN, Eriksson MA, Friesen M. Signatures of atomic-scale structure in the energy dispersion and coherence of a Si quantum-dot qubit Physical Review B. 98. DOI: 10.1103/Physrevb.98.165438  0.348
2018 Peng W, Zamiri M, Scott SA, Cavallo F, Endres JJ, Knezevic I, Eriksson MA, Lagally MG. Electronic Transport in Hydrogen-Terminated Si(001) Nanomembranes Physical Review Applied. 9. DOI: 10.1103/Physrevapplied.9.024037  0.355
2018 Wang X, Cui X, Bhat A, Savage DE, Reno JL, Lagally MG, Paiella R. Ultrawide strain-tuning of light emission from InGaAs nanomembranes Applied Physics Letters. 113: 201105. DOI: 10.1063/1.5055869  0.333
2018 Neyens SF, Foote RH, Thorgrimsson B, Knapp TJ, McJunkin T, Vandersypen LMK, Amin P, Thomas NK, Clarke JS, Savage DE, Lagally MG, Friesen M, Coppersmith SN, Eriksson MA. The critical role of substrate disorder in valley splitting in Si quantum wells Applied Physics Letters. 112: 243107. DOI: 10.1063/1.5033447  0.396
2018 Ferdous R, Kawakami E, Scarlino P, Nowak MP, Ward DR, Savage DE, Lagally MG, Coppersmith SN, Friesen M, Eriksson MA, Vandersypen LMK, Rahman R. Valley dependent anisotropic spin splitting in silicon quantum dots Npj Quantum Information. 4: 26. DOI: 10.1038/S41534-018-0075-1  0.32
2018 Guo Q, Di Z, Lagally MG, Mei Y. Strain engineering and mechanical assembly of silicon/germanium nanomembranes Materials Science and Engineering: R: Reports. 128: 1-31. DOI: 10.1016/J.Mser.2018.02.002  0.44
2017 Scott S, Deneke C, Paskiewicz DM, Ryu HJ, Malachias A, Baunack S, Schmidt OG, Savage DE, Eriksson MA, Lagally MG. Silicon Nanomembranes with Hybrid Crystal Orientations and Strain States. Acs Applied Materials & Interfaces. PMID 29129058 DOI: 10.1021/Acsami.7B14291  0.797
2017 Chen Y, Yusuf MH, Guan Y, Jacobson RB, Lagally MG, Babcock SE, Kuech TF, Evans PG. Distinct nucleation and growth kinetics of amorphous SrTiO3 on (001) SrTiO3 and SiO2/Si: A step towards new architectures. Acs Applied Materials & Interfaces. PMID 29094920 DOI: 10.1021/Acsami.7B12978  0.393
2017 Rojas Delgado R, Jacobberger RM, Roy SS, Mangu VS, Arnold MS, Cavallo F, Lagally MG. Passivation of Germanium by Graphene. Acs Applied Materials & Interfaces. PMID 28474879 DOI: 10.1021/Acsami.7B03889  0.303
2016 Kawakami E, Jullien T, Scarlino P, Ward DR, Savage DE, Lagally MG, Dobrovitski VV, Friesen M, Coppersmith SN, Eriksson MA, Vandersypen LM. Gate fidelity and coherence of an electron spin in an Si/SiGe quantum dot with micromagnet. Proceedings of the National Academy of Sciences of the United States of America. PMID 27698123 DOI: 10.1073/Pnas.1603251113  0.307
2016 Knapp TJ, Mohr RT, Li YS, Thorgrimsson B, Foote RH, Wu X, Ward DR, Savage DE, Lagally MG, Friesen M, Coppersmith SN, Eriksson MA. Characterization of a gate-defined double quantum dot in a Si/SiGe nanomembrane. Nanotechnology. 27: 154002. PMID 26938505 DOI: 10.1088/0957-4484/27/15/154002  0.43
2016 McElhinny KM, Gopalakrishnan G, Savage DE, Czaplewski DA, Lagally MG, Holt MV, Evans PG. Synchrotron x-ray thermal diffuse scattering probes for phonons in Si/SiGe/Si trilayer nanomembranes Mrs Advances. 1: 3263-3268. DOI: 10.1557/Adv.2016.352  0.414
2016 Grierson DS, Flack FS, Lagally MG, Turner KT. Rolling-based direct-transfer printing: A process for large-area transfer of micro- and nanostructures onto flexible substrates Journal of Applied Physics. 120. DOI: 10.1063/1.4961407  0.306
2016 Yin J, Cui X, Wang X, Sookchoo P, Lagally MG, Paiella R. Flexible nanomembrane photonic-crystal cavities for tensilely strained-germanium light emission Applied Physics Letters. 108. DOI: 10.1063/1.4954188  0.401
2016 Park J, Ahn Y, Tilka JA, Sampson KC, Savage DE, Prance JR, Simmons CB, Lagally MG, Coppersmith SN, Eriksson MA, Holt MV, Evans PG. Electrode-stress-induced nanoscale disorder in Si quantum electronic devices Apl Materials. 4. DOI: 10.1063/1.4954054  0.408
2016 Durmaz H, Sookchoo P, Cui X, Jacobson R, Savage DE, Lagally MG, Paiella R. SiGe Nanomembrane Quantum-Well Infrared Photodetectors Acs Photonics. 3: 1978-1985. DOI: 10.1021/Acsphotonics.6B00524  0.464
2015 Scarlino P, Kawakami E, Ward DR, Savage DE, Lagally MG, Friesen M, Coppersmith SN, Eriksson MA, Vandersypen LM. Second-Harmonic Coherent Driving of a Spin Qubit in a Si/SiGe Quantum Dot. Physical Review Letters. 115: 106802. PMID 26382693 DOI: 10.1103/Physrevlett.115.106802  0.3
2015 Jacobberger RM, Kiraly B, Fortin-Deschenes M, Levesque PL, McElhinny KM, Brady GJ, Rojas Delgado R, Singha Roy S, Mannix A, Lagally MG, Evans PG, Desjardins P, Martel R, Hersam MC, Guisinger NP, et al. Direct oriented growth of armchair graphene nanoribbons on germanium. Nature Communications. 6: 8006. PMID 26258594 DOI: 10.1038/Ncomms9006  0.321
2015 Li YS, Sookchoo P, Cui X, Mohr R, Savage DE, Foote RH, Jacobson RB, Sánchez-Pérez JR, Paskiewicz DM, Wu X, Ward DR, Coppersmith SN, Eriksson MA, Lagally MG. Electronic Transport Properties of Epitaxial Si/SiGe Heterostructures Grown on Single-Crystal SiGe Nanomembranes. Acs Nano. 9: 4891-9. PMID 25932940 DOI: 10.1021/Nn506475Z  0.793
2015 McElhinny KM, Gopalakrishnan G, Savage DE, Silva-Martínez JC, Lagally MG, Holt MV, Evans PG. Fabrication of flat SiGe heterostructure nanomembrane windows via strain-relief patterning Journal of Physics D: Applied Physics. 48. DOI: 10.1088/0022-3727/48/1/015306  0.484
2015 Marçal LAB, Richard MI, Magalhães-Paniago R, Cavallo F, Lagally MG, Schmidt OG, Schülli T, Deneke C, Malachias A. Direct evidence of strain transfer for InAs island growth on compliant Si substrates Applied Physics Letters. 106. DOI: 10.1063/1.4918615  0.482
2015 Kim D, Ward DR, Simmons CB, Savage DE, Lagally MG, Friesen M, Coppersmith SN, Eriksson MA. High-fidelity resonant gating of a silicon-based quantum dot hybrid qubit Npj Quantum Information. 1. DOI: 10.1038/Npjqi.2015.4  0.307
2015 Durmaz H, Sookchoo P, Sudradjat FF, Kiefer AM, Lagally MG, Paiella R. SiGe nanomembrane active materials for far-infrared intersubband devices Integrated Photonics Research, Silicon and Nanophotonics, Iprsn 2015. 371p.  0.66
2014 Cavallo F, Huang Y, Dent EW, Williams JC, Lagally MG. Neurite guidance and three-dimensional confinement via compliant semiconductor scaffolds. Acs Nano. 8: 12219-27. PMID 25479558 DOI: 10.1021/Nn503989C  0.302
2014 Cavallo F, Rojas Delgado R, Kelly MM, Sánchez Pérez JR, Schroeder DP, Xing HG, Eriksson MA, Lagally MG. Exceptional charge transport properties of graphene on germanium. Acs Nano. 8: 10237-45. PMID 25203974 DOI: 10.1021/Nn503381M  0.745
2014 Kawakami E, Scarlino P, Ward DR, Braakman FR, Savage DE, Lagally MG, Friesen M, Coppersmith SN, Eriksson MA, Vandersypen LM. Electrical control of a long-lived spin qubit in a Si/SiGe quantum dot. Nature Nanotechnology. 9: 666-70. PMID 25108810 DOI: 10.1038/Nnano.2014.153  0.302
2014 Boztug C, Sánchez-Pérez JR, Cavallo F, Lagally MG, Paiella R. Strained-germanium nanostructures for infrared photonics. Acs Nano. 8: 3136-51. PMID 24597822 DOI: 10.1021/Nn404739B  0.406
2014 Paskiewicz DM, Savage DE, Holt MV, Evans PG, Lagally MG. Nanomembrane-based materials for Group IV semiconductor quantum electronics. Scientific Reports. 4: 4218. PMID 24573089 DOI: 10.1038/Srep04218  0.799
2014 Paiella R, Boztug C, Sánchez-Pérez J, Yin J, Lagally MG. Tensilely strained germanium nanomembranes for direct-bandgap infrared light emission Proceedings of Spie - the International Society For Optical Engineering. 9162. DOI: 10.1117/12.2063293  0.404
2014 Euaruksakul C, Kelly MM, Yang B, Savage DE, Celler GK, Lagally MG. Heteroepitaxial growth on thin sheets and bulk material: Exploring differences in strain relaxation via low-energy electron microscopy Journal of Physics D: Applied Physics. 47. DOI: 10.1088/0022-3727/47/2/025305  0.794
2014 Clausen AM, Paskiewicz DM, Sadeghirad A, Jakes J, Savage DE, Stone DS, Liu F, Lagally MG. Silicon nanomembranes as a means to evaluate stress evolution in deposited thin films Extreme Mechanics Letters. 1: 9-16. DOI: 10.1016/J.Eml.2014.12.003  0.805
2014 Cavallo F, Turner KT, Lagally MG. Facile fabrication of ordered crystalline-semiconductor microstructures on compliant substrates Advanced Functional Materials. 24: 1730-1737. DOI: 10.1002/Adfm.201303165  0.38
2013 Zhou M, Liu Z, Wang Z, Bai Z, Feng Y, Lagally MG, Liu F. Strain-engineered surface transport in Si(001): complete isolation of the surface state via tensile strain. Physical Review Letters. 111: 246801. PMID 24483685 DOI: 10.1103/Physrevlett.111.246801  0.432
2013 Larson BJ, Gillmor SD, Braun JM, Cruz-Barba LE, Savage DE, Denes FS, Lagally MG. Long-term reduction in poly(dimethylsiloxane) surface hydrophobicity via cold-plasma treatments. Langmuir : the Acs Journal of Surfaces and Colloids. 29: 12990-6. PMID 24063604 DOI: 10.1021/La403077Q  0.71
2013 Zhou H, Seo JH, Paskiewicz DM, Zhu Y, Celler GK, Voyles PM, Zhou W, Lagally MG, Ma Z. Fast flexible electronics with strained silicon nanomembranes. Scientific Reports. 3: 1291. PMID 23416347 DOI: 10.1038/Srep01291  0.795
2013 Sookchoo P, Sudradjat FF, Kiefer AM, Durmaz H, Paiella R, Lagally MG. Strain engineered SiGe multiple-quantum-well nanomembranes for far-infrared intersubband device applications. Acs Nano. 7: 2326-34. PMID 23402572 DOI: 10.1021/Nn305528T  0.777
2013 Peng W, Aksamija Z, Scott SA, Endres JJ, Savage DE, Knezevic I, Eriksson MA, Lagally MG. Probing the electronic structure at semiconductor surfaces using charge transport in nanomembranes. Nature Communications. 4: 1339. PMID 23299889 DOI: 10.1038/Ncomms2350  0.345
2013 Boztug C, Sánchez-Pérez JR, Sudradjat FF, Jacobson RB, Paskiewicz DM, Lagally MG, Paiella R. Tensilely strained germanium nanomembranes as infrared optical gain media. Small (Weinheim An Der Bergstrasse, Germany). 9: 622-30. PMID 23125175 DOI: 10.1002/Smll.201201090  0.764
2013 Seo JH, Zhou H, Paskiewicz DM, Lagally MG, Zhou W, Ma Z. 15-GHz flexible microwave thin-film transistors on plastic Ieee Mtt-S International Microwave Symposium Digest. DOI: 10.1109/MWSYM.2013.6697709  0.768
2013 Shi Z, Simmons CB, Ward DR, Prance JR, Mohr RT, Koh TS, Gamble JK, Wu X, Savage DE, Lagally MG, Friesen M, Coppersmith SN, Eriksson MA. Coherent quantum oscillations and echo measurements of a Si charge qubit Physical Review B - Condensed Matter and Materials Physics. 88. DOI: 10.1103/Physrevb.88.075416  0.307
2013 Boztug C, Sánchez-Pérez JR, Yin J, Lagally MG, Paiella R. Grating-coupled mid-infrared light emission from tensilely strained germanium nanomembranes Applied Physics Letters. 103. DOI: 10.1063/1.4830377  0.373
2013 Sudradjat FF, Sookchoo P, Durmaz H, Kiefer AM, Lagally MG, Paiellaa R. Strain-engineered SiGe quantum-well nanomembranes for far-infrared intersubband device applications Cleo: Science and Innovations, Cleo_si 2013.  0.736
2013 Boztug C, Sánchez Pérez JR, Yin J, Sudradjat FF, Paskiewicz DM, Jacobson RB, Lagally MG, Paiella R. Grating-coupled strain-enhanced light emission from mechanically stressed Germanium nanomembranes Cleo: Science and Innovations, Cleo_si 2013.  0.752
2013 Sudradjat FF, Sookchoo P, Durmaz H, Kiefer AM, Lagally MG, Paiellaa R. Strain-engineered SiGe quantum-well nanomembranes for far-infrared intersubband device applications Cleo: Science and Innovations, Cleo_si 2013. CW1O.5.  0.701
2012 Cavallo F, Lagally MG. Semiconductor nanomembranes: a platform for new properties via strain engineering. Nanoscale Research Letters. 7: 628. PMID 23153167 DOI: 10.1186/1556-276X-7-628  0.474
2012 Deneke C, Malachias A, Rastelli A, Merces L, Huang M, Cavallo F, Schmidt OG, Lagally MG. Straining nanomembranes via highly mismatched heteroepitaxial growth: InAs islands on compliant Si substrates. Acs Nano. 6: 10287-95. PMID 23046451 DOI: 10.1021/Nn304151J  0.437
2012 Evans PG, Savage DE, Prance JR, Simmons CB, Lagally MG, Coppersmith SN, Eriksson MA, Schülli TU. Nanoscale distortions of Si quantum wells in Si/SiGe quantum-electronic heterostructures. Advanced Materials (Deerfield Beach, Fla.). 24: 5217-21. PMID 22806921 DOI: 10.1002/Adma.201201833  0.413
2012 Prance JR, Shi Z, Simmons CB, Savage DE, Lagally MG, Schreiber LR, Vandersypen LM, Friesen M, Joynt R, Coppersmith SN, Eriksson MA. Single-shot measurement of triplet-singlet relaxation in a Si/SiGe double quantum dot. Physical Review Letters. 108: 046808. PMID 22400879 DOI: 10.1103/Physrevlett.108.046808  0.306
2012 Paskiewicz DM, Tanto B, Savage DE, Evans PG, Eriksson MA, Lagally MG. Single-crystalline elastically relaxed SiGe nanomembranes: Substrates for epitaxial growth of defect-free strained-Si/SiGe heterostructures 2012 International Silicon-Germanium Technology and Device Meeting, Istdm 2012 - Proceedings. 28-29. DOI: 10.1109/ISTDM.2012.6222441  0.83
2011 Wu D, Lagally MG, Liu F. Stabilizing graphitic thin films of wurtzite materials by epitaxial strain. Physical Review Letters. 107: 236101. PMID 22182104 DOI: 10.1103/Physrevlett.107.236101  0.357
2011 Sánchez-Pérez JR, Boztug C, Chen F, Sudradjat FF, Paskiewicz DM, Jacobson RB, Lagally MG, Paiella R. Direct-bandgap light-emitting germanium in tensilely strained nanomembranes. Proceedings of the National Academy of Sciences of the United States of America. 108: 18893-8. PMID 22084063 DOI: 10.1073/Pnas.1107968108  0.764
2011 Rogers JA, Lagally MG, Nuzzo RG. Synthesis, assembly and applications of semiconductor nanomembranes. Nature. 477: 45-53. PMID 21886156 DOI: 10.1038/Nature10381  0.312
2011 Oehrlein SM, Sanchez-Perez JR, Jacobson R, Flack FS, Kershner RJ, Lagally MG. Translation and manipulation of silicon nanomembranes using holographic optical tweezers. Nanoscale Research Letters. 6: 507. PMID 21867504 DOI: 10.1186/1556-276X-6-507  0.373
2011 Chen F, Jiang H, Kiefer AM, Clausen AM, Ting YH, Wendt AE, Ding B, Lagally MG. Fabrication of ultrahigh-density nanowires by electrochemical nanolithography. Nanoscale Research Letters. 6: 444. PMID 21745363 DOI: 10.1186/1556-276X-6-444  0.801
2011 Zhao X, Scott SA, Huang M, Peng W, Kiefer AM, Flack FS, Savage DE, Lagally MG. Influence of surface properties on the electrical conductivity of silicon nanomembranes. Nanoscale Research Letters. 6: 402. PMID 21711931 DOI: 10.1186/1556-276X-6-402  0.726
2011 Paskiewicz DM, Scott SA, Savage DE, Celler GK, Lagally MG. Symmetry in strain engineering of nanomembranes: making new strained materials. Acs Nano. 5: 5532-42. PMID 21682324 DOI: 10.1021/Nn2009672  0.766
2011 Paskiewicz DM, Tanto B, Savage DE, Lagally MG. Defect-free single-crystal SiGe: a new material from nanomembrane strain engineering. Acs Nano. 5: 5814-22. PMID 21650206 DOI: 10.1021/Nn201547K  0.826
2011 Cavallo F, Grierson DS, Turner KT, Lagally MG. "Soft Si": effective stiffness of supported crystalline nanomembranes. Acs Nano. 5: 5400-7. PMID 21644543 DOI: 10.1021/Nn200461G  0.359
2011 Yu M, Huang Y, Ballweg J, Shin H, Huang M, Savage DE, Lagally MG, Dent EW, Blick RH, Williams JC. Semiconductor nanomembrane tubes: three-dimensional confinement for controlled neurite outgrowth. Acs Nano. 5: 2447-57. PMID 21366271 DOI: 10.1021/Nn103618D  0.311
2011 Kiefer AM, Paskiewicz DM, Clausen AM, Buchwald WR, Soref RA, Lagally MG. Si/Ge junctions formed by nanomembrane bonding. Acs Nano. 5: 1179-89. PMID 21247201 DOI: 10.1021/Nn103149C  0.809
2011 Lee CH, Ritz CS, Huang M, Ziwisky MW, Blise RJ, Lagally MG. Integrated freestanding single-crystal silicon nanowires: conductivity and surface treatment. Nanotechnology. 22: 055704. PMID 21178224 DOI: 10.1088/0957-4484/22/5/055704  0.822
2011 Huang M, Cavallo F, Liu F, Lagally MG. Nanomechanical architecture of semiconductor nanomembranes. Nanoscale. 3: 96-120. PMID 21031195 DOI: 10.1039/C0Nr00648C  0.332
2011 Zhao XF, Han P, Scott S, Lagally MG. Influence of Surface and Interface Properties on the Electrical Conductivity of Silicon Nanomembranes Advanced Materials Research. 7220-7223. DOI: 10.4028/Www.Scientific.Net/Amr.383-390.7220  0.328
2011 Lagally MG, Kiefer AM, Paskiewicz DM, Cavallo F, Scott SA, Ma ZQ, Savage DE. Semiconductor nanomembranes: A platform for new science and technology Proceedings of Spie - the International Society For Optical Engineering. 8031. DOI: 10.1117/12.884810  0.789
2011 Yu M, Huang M, Savage DE, Lagally MG, Blick RH. Local-wetting-induced deformation of rolled-up Si/Si-Ge nanomembranes: A potential route for remote chemical sensing Ieee Transactions On Nanotechnology. 10: 21-25. DOI: 10.1109/Tnano.2010.2066986  0.481
2011 Thalakulam M, Simmons CB, Van Bael BJ, Rosemeyer BM, Savage DE, Lagally MG, Friesen M, Coppersmith SN, Eriksson MA. Single-shot measurement and tunnel-rate spectroscopy of a Si/SiGe few-electron quantum dot Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.045307  0.341
2011 Chen F, Euaruksakul C, Liu Z, Himpsel FJ, Liu F, Lagally MG. Conduction band structure and electron mobility in uniaxially strained Si via externally applied strain in nanomembranes Journal of Physics D: Applied Physics. 44. DOI: 10.1088/0022-3727/44/32/325107  0.764
2011 Shi Z, Simmons CB, Prance JR, King Gamble J, Friesen M, Savage DE, Lagally MG, Coppersmith SN, Eriksson MA. Tunable singlet-triplet splitting in a few-electron Si/SiGe quantum dot Applied Physics Letters. 99. DOI: 10.1063/1.3666232  0.327
2011 Boztug C, Chen F, Sanchez-Perez JR, Sudradjat FF, Paskiewicz DM, Jacobson RB, Lagally MG, Paiella R. Direct-bandgap germanium active layers pumped above transparency based on tensilely strained nanomembranes Optics Infobase Conference Papers.  0.729
2010 Ryu HJ, Aksamija Z, Paskiewicz DM, Scott SA, Lagally MG, Knezevic I, Eriksson MA. Quantitative determination of contributions to the thermoelectric power factor in Si nanostructures. Physical Review Letters. 105: 256601. PMID 21231606 DOI: 10.1103/Physrevlett.105.256601  0.747
2010 Liu Z, Wu J, Duan W, Lagally MG, Liu F. Electronic phase diagram of single-element silicon "strain" superlattices. Physical Review Letters. 105: 016802. PMID 20867470 DOI: 10.1103/Physrevlett.105.016802  0.451
2010 Chen F, Ramayya EB, Euaruksakul C, Himpsel FJ, Celler GK, Ding B, Knezevic I, Lagally MG. Quantum confinement, surface roughness, and the conduction band structure of ultrathin silicon membranes. Acs Nano. 4: 2466-74. PMID 20302337 DOI: 10.1021/Nn100275Z  0.759
2010 Salling CT, Lagally MG. Fabrication of atomic-scale structures on si(001) surfaces. Science (New York, N.Y.). 265: 502-6. PMID 17781309 DOI: 10.1126/Science.265.5171.502  0.361
2010 Paskiewicz DM, Scott SA, Savage DE, Lagally MG. Elastically strain-sharing Si(110) nanomembranes Ecs Transactions. 33: 813-821. DOI: 10.1149/1.3487611  0.777
2010 Cavallo F, Paskiewicz DM, Scott SA, Huang MH, Lagally MG. Group IV nanomembranes and nanoepitaxy: New properties via local and global strain engineering Proceedings of Spie - the International Society For Optical Engineering. 7768. DOI: 10.1117/12.861592  0.777
2010 Seo S, Euaruksakul C, Savage DE, Lagally MG, Evans PG. Nanostructure formation in the initial roughening of a thin silicon sheet Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.041302  0.78
2010 Ritz CS, Kim-Lee HJ, Detert DM, Kelly MM, Flack FS, Savage DE, Cai Z, Evans PG, Turner KT, Lagally MG. Ordering of nanostressors on free-standing silicon nanomembranes and nanoribbons New Journal of Physics. 12. DOI: 10.1088/1367-2630/12/10/103011  0.811
2010 Lagally MG. Nanoepitaxy in the presence of lattice strain: Quantum dots and strain engineering of nanomembranes in the silicon model system Aip Conference Proceedings. 1270: 316-323. DOI: 10.1063/1.3476234  0.302
2010 Thalakulam M, Simmons CB, Rosemeyer BM, Savage DE, Lagally MG, Friesen M, Coppersmith SN, Eriksson MA. Fast tunnel rates in Si/SiGe one-electron single and double quantum dots Applied Physics Letters. 96. DOI: 10.1063/1.3425892  0.361
2010 Zhang Y, Yu M, Savage DE, Lagally MG, Blick RH, Liu F. Effect of surface bonding on semiconductor nanoribbon wiggling structure Applied Physics Letters. 96. DOI: 10.1063/1.3353972  0.386
2010 Cavallo F, Lagally MG. Semiconductors turn soft: Inorganic nanomembranes Soft Matter. 6: 439-455. DOI: 10.1039/B916582G  0.391
2009 Kim-Lee HJ, Savage DE, Ritz CS, Lagally MG, Turner KT. Control of three-dimensional island growth with mechanically responsive single-crystal nanomembrane substrates. Physical Review Letters. 102: 226103. PMID 19658881 DOI: 10.1103/PhysRevLett.102.226103  0.818
2009 Simmons CB, Thalakulam M, Rosemeyer BM, Van Bael BJ, Sackmann EK, Savage DE, Lagally MG, Joynt R, Friesen M, Coppersmith SN, Eriksson MA. Charge sensing and controllable tunnel coupling in a Si/SiGe double quantum dot. Nano Letters. 9: 3234-8. PMID 19645459 DOI: 10.1021/Nl9014974  0.315
2009 Scott SA, Peng W, Kiefer AM, Jiang H, Knezevic I, Savage DE, Eriksson MA, Lagally MG. Influence of surface chemical modification on charge transport properties in ultrathin silicon membranes. Acs Nano. 3: 1683-92. PMID 19499933 DOI: 10.1021/Nn9000947  0.739
2009 Huang M, Ritz CS, Novakovic B, Yu D, Zhang Y, Flack F, Savage DE, Evans PG, Knezevic I, Liu F, Lagally MG. Mechano-electronic superlattices in silicon nanoribbons. Acs Nano. 3: 721-7. PMID 19209871 DOI: 10.1021/Nn8008883  0.833
2009 Liu F, Lagally MG, Zang J. Nanomechanical Architectures - Mechanics-Driven fabrication based on crystalline membranes Mrs Bulletin. 34: 190-195. DOI: 10.1557/Mrs2009.51  0.309
2009 Oehrlein SM, Jacobson RB, Flack FS, Lagally MG, Kershner RJ. Optically actuated micromanipulation of silicon nanomembranes Proceedings of Spie - the International Society For Optical Engineering. 7400. DOI: 10.1117/12.826424  0.32
2009 Euaruksakul C, Chen F, Tanto B, Ritz CS, Paskiewicz DM, Himpsel FJ, Savage DE, Liu Z, Yao Y, Liu F, Lagally MG. Relationships between strain and band structure in Si(001) and Si(110) nanomembranes Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/Physrevb.80.115323  0.815
2009 Harb M, Peng W, Sciaini G, Hebeisen CT, Ernstorfer R, Eriksson MA, Lagally MG, Kruglik SG, Miller RJD. Excitation of longitudinal and transverse coherent acoustic phonons in nanometer free-standing films of (001) Si Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.094301  0.362
2009 Zhang PP, Yang B, Rugheimer PP, Roberts MM, Savage DE, Liu F, Lagally MG. Influence of germanium on thermal dewetting and agglomeration of the silicon template layer in thin silicon-on-insulator Journal of Physics D: Applied Physics. 42. DOI: 10.1088/0022-3727/42/17/175309  0.792
2009 Yuan HC, Shin J, Qin G, Sun L, Bhattacharya P, Lagally MG, Celler GK, Ma Z. Flexible photodetectors on plastic substrates by use of printing transferred single-crystal germanium membranes Applied Physics Letters. 94. DOI: 10.1063/1.3062938  0.347
2008 Euaruksakul C, Li ZW, Zheng F, Himpsel FJ, Ritz CS, Tanto B, Savage DE, Liu XS, Lagally MG. Influence of strain on the conduction band structure of strained silicon nanomembranes. Physical Review Letters. 101: 147403. PMID 18851573 DOI: 10.1103/PhysRevLett.101.147403  0.795
2008 Jiang H, Jantan MK, Manolache S, Denes FS, Lagally MG. Plasma-enhanced synthesis of thin fluoropolymer layers with low Raman and fluorescence backgrounds. Langmuir : the Acs Journal of Surfaces and Colloids. 24: 8672-7. PMID 18627194 DOI: 10.1021/La801396K  0.314
2008 Harb M, Ernstorfer R, Hebeisen CT, Sciaini G, Peng W, Dartigalongue T, Eriksson MA, Lagally MG, Kruglik SG, Miller RJ. Electronically driven structure changes of Si captured by femtosecond electron diffraction. Physical Review Letters. 100: 155504. PMID 18518123 DOI: 10.1103/Physrevlett.100.155504  0.356
2008 Eriksson MA, Simmons CB, Shaji N, Thalakulam M, Sackmann EK, Bael BJV, Savage DE, Lagally MG, Joynt R, Friesen M, Blick RH, Rimberg AJ, Coppersmith SN. Spin Blockade and Lifetime Enhanced Transport in a Silicon/Silicon-Germanium Double-Quantum Dot (Invited) The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2008.H-8-1  0.323
2008 Ryu HJ, Ritz CS, Klein LJ, Hamann HF, Lagally MG, Eriksson MA. Phonon transport and thermoelectricity in silicon nanostructures Ecs Transactions. 16: 983-988. DOI: 10.1149/1.2986860  0.789
2008 Kim-Lee HJ, Savage DE, Ritz CS, Lagally MG, Turner KT. Engineering SiGe growth using mechanically responsive ultrathin substrates Ecs Transactions. 16: 299-305. DOI: 10.1149/1.2986787  0.775
2008 Scott SA, Paskiewicz DM, Savage DE, Lagally MG. Silicon nanomembranes incorporating mixed crystal orientations Ecs Transactions. 16: 215-218. DOI: 10.1149/1.2986772  0.719
2008 Yuan HC, Kelly MM, Savage DE, Lagally MG, Celler GK, Ma Z. Thermally processed high-mobility MOS thin-film transistors on transferable single-crystal elastically strain-sharing Si/SiGe/Si nanomembranes Ieee Transactions On Electron Devices. 55: 810-815. DOI: 10.1109/Ted.2007.914833  0.485
2008 Lagally MG. Silicon nanomembranes: Opportunities for new Si functionalities via strain, flexibility, and layering Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 632-633. DOI: 10.1109/LEOS.2008.4688777  0.337
2008 Shaji N, Simmons CB, Thalakulam M, Klein LJ, Qin H, Luo H, Savage DE, Lagally MG, Rimberg AJ, Joynt R, Friesen M, Blick RH, Coppersmith SN, Eriksson MA. Spin blockade and lifetime-enhanced transport in a few-electron Si/SiGe double quantum dot Nature Physics. 4: 540-544. DOI: 10.1038/Nphys988  0.355
2008 Shaji N, Simmons CB, Klein LJ, Qin H, Savage DE, Lagally MG, Coppersmith SN, Joynt R, Friesen M, Blick RH, Eriksson MA. Top-gated few-electron double quantum dot in Si/SiGe Physica E: Low-Dimensional Systems and Nanostructures. 40: 520-523. DOI: 10.1016/J.Physe.2007.07.028  0.332
2008 Cullen SP, Ha S, Lagally MG, Gopalan P. Photopatternable Substrate-Independent Poly(glycidyl methacrylate-ran-2- (acryloyloxy) ethyl 2-methylacrylate) Polymer Films for Immobilization of Biomolecules Journal of Polymer Science, Part a: Polymer Chemistry. 46: 5826-5838. DOI: 10.1002/Pola.22896  0.581
2007 Scott SA, Roberts MM, Savage DE, Lagally MG. Strained Si-based nanomembrane materials Materials Research Society Symposium Proceedings. 958: 139-150. DOI: 10.1557/Proc-0958-L04-07  0.443
2007 Euaruksakul C, Li Z, Savage DE, Lagally MG. X-ray absorption spectroscopy of strained-Si nanomembranes Ecs Transactions. 6: 257-262. DOI: 10.1149/1.2728869  0.748
2007 Pang H, Yuan HC, Lagally MG, Celler GK, Ma Z. Instability of threshold voltage of flexible single-crystal Si TFTs Ecs Transactions. 6: 145-150. DOI: 10.1149/1.2728853  0.314
2007 Yuan HC, Ma Z, Ritz CS, Savage DE, Lagally MG, Celler GK. Complementary single-crystal silicon TFTs on plastic Ecs Transactions. 6: 139-144. DOI: 10.1149/1.2728852  0.787
2007 Opotowsky AC, Scott SA, Ritz CS, Savage DE, Celler GK, Lagally MG. Structure of elastically strain-sharing silicon(110) nanomembranes New Journal of Physics. 9. DOI: 10.1088/1367-2630/9/8/270  0.841
2007 Yuan HC, Wang G, Ma Z, Roberts MM, Savage DE, Lagally MG. Flexible thin-film transistors on biaxial- and uniaxial-strained Si and SiGe membranes Semiconductor Science and Technology. 22: S72-S75. DOI: 10.1088/0268-1242/22/1/S17  0.311
2007 Scott SA, Lagally MG. Elastically strain-sharing nanomembranes: Flexible and transferable strained silicon and silicon-germanium alloys Journal of Physics D: Applied Physics. 40. DOI: 10.1088/0022-3727/40/4/R01  0.458
2007 Fujikawa Y, Yamada-Takamura Y, Yoshikawa G, Ono T, Esashi M, Zhang PP, Lagally MG, Sakurai T. Silicon on insulator for symmetry-converted growth Applied Physics Letters. 90. DOI: 10.1063/1.2748099  0.436
2007 Peng W, Roberts MM, Nordberg EP, Flack FS, Colavita PE, Hamers RJ, Savage DE, Lagally MG, Eriksson MA. Single-crystal silicon/silicon dioxide multilayer heterostructures based on nanomembrane transfer Applied Physics Letters. 90. DOI: 10.1063/1.2734367  0.378
2006 Roberts MM, Klein LJ, Savage DE, Slinker KA, Friesen M, Celler G, Eriksson MA, Lagally MG. Elastically relaxed free-standing strained-silicon nanomembranes. Nature Materials. 5: 388-93. PMID 16604081 DOI: 10.1038/Nmat1606  0.438
2006 Zhang P, Tevaarwerk E, Park BN, Savage DE, Celler GK, Knezevic I, Evans PG, Eriksson MA, Lagally MG. Electronic transport in nanometre-scale silicon-on-insulator membranes. Nature. 439: 703-6. PMID 16467833 DOI: 10.1038/Nature04501  0.594
2006 Yuan HC, Ma Z, Lagally MG, Celler GK. Threshold-voltage instability of single-crystal Si thin-film transistors fabricated on plastic substrate Ecs Transactions. 3: 81-85. DOI: 10.1149/1.2356338  0.31
2006 Cheun H, Rugheimer PP, Larson BJ, Gopalan P, Lagally MG, Winokur MJ. Polymer light emitting diodes and poly(di- n -octylfluorene) thin films as fabricated with a microfluidics applicator Journal of Applied Physics. 100. DOI: 10.1063/1.2349467  0.728
2006 Yuan HC, Ma Z, Roberts MM, Savage DE, Lagally MG. High-speed strained-single-crystal-silicon thin-film transistors on flexible polymers Journal of Applied Physics. 100. DOI: 10.1063/1.2214301  0.47
2006 Fujikawa Y, Sakurai T, Lagally MG. Charge transfer in the atomic structure of Ge (1 0 5) Applied Surface Science. 252: 5244-5248. DOI: 10.1016/J.Apsusc.2005.12.010  0.392
2006 Yuan HC, Roberts MM, Savage DE, Lagally MG, Ma Z, Celler GK. Fabrication and transistor demonstration on Si-based nanomembranes 2006 Nsti Nanotechnology Conference and Trade Show - Nsti Nanotech 2006 Technical Proceedings. 1: 68-71.  0.319
2006 Yuan HC, Wang G, Roberts MM, Savage DE, Lagally MG, Ma Z. Flexible thin-film transistors on strained Si/SiGe membranes Third International Sige Technology and Device Meeting, Istdm 2006 - Conference Digest. 2006.  0.31
2005 AKIYAMA K, EGUCHI T, FUJIKAWA Y, AN T, ONO M, HASHIMOTO T, MORIKAWA Y, TERAKURA K, SAKURAI T, LAGALLY MG, HASEGAWA Y. AFM Observation of Ge/Si(105) Surfaces Hyomen Kagaku. 26: 486-491. DOI: 10.1380/Jsssj.26.486  0.35
2005 Fujikawa Y, Nagao T, Yamada-Takamura Y, Sakurai T, Hashimoto T, Morikawa Y, Terakura K, Lagally MG. Hydrogen-induced instability of the Ge(105) surface Physical Review Letters. 94. DOI: 10.1103/Physrevlett.94.086105  0.437
2005 Yang B, Zhang P, Savage DE, Lagally MG, Lu GH, Huang M, Liu F. Self-organization of semiconductor nanocrystals by selective surface faceting Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.235413  0.612
2005 Huang M, Rugheimer P, Lagally MG, Liu F. Bending of nanoscale ultrathin substrates by growth of strained thin films and islands Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.085450  0.769
2005 Qin H, Shaji N, Merrill NE, Kim HS, Toonen RC, Blick RH, Roberts MM, Savage DE, Lagally MG, Celler G. Formation of microtubes from strained SiGe/Si heterostructures New Journal of Physics. 7. DOI: 10.1088/1367-2630/7/1/241  0.435
2005 Evans PG, Tinberg DS, Roberts MM, Lagally MG, Xiao Y, Lai B, Cai Z. Germanium hut nanostressors on freestanding thin silicon membranes Applied Physics Letters. 87. DOI: 10.1063/1.2031941  0.428
2005 Yang B, Marcus MS, Keppel DG, Zhang PP, Li ZW, Larson BJ, Savage DE, Simmons JM, Castellini OM, Eriksson MA, Lagally MG. Template-directed carbon nanotube network using self-organized Si nanocrystals Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1952585  0.596
2005 Huang M, Nairn JA, Liu F, Lagally MG. Mechanical stability of ultrathin GeSi film on Si O2: The effect of SiSi O2 interface Journal of Applied Physics. 97. DOI: 10.1063/1.1926421  0.404
2005 Tevaarwerk E, Keppel DG, Rugheimer P, Lagally MG, Eriksson MA. Quantitative analysis of electric force microscopy: The role of sample geometry Review of Scientific Instruments. 76. DOI: 10.1063/1.1898183  0.724
2005 Evans PG, Rugheimer PP, Lagally MG, Lee CH, Lal A, Xiao Y, Lai B, Cai Z. Microfabricated strained substrates for Ge epitaxial growth Journal of Applied Physics. 97. DOI: 10.1063/1.1894579  0.805
2005 Huang M, Boons C, Roberts M, Savage DE, Lagally MG, Shaji N, Qin H, Blick R, Nairn JA, Liu F. Nanomechanical architecture of strained bilayer thin films: From design principles to experimental fabrication Advanced Materials. 17: 2860-2864. DOI: 10.1002/Adma.200501353  0.352
2005 Yuan HC, Roberts MM, Savage DE, Lagally MG, Ma Z. N-type thin-film transistors fabricated on transferred, elastically strain-shared Si/SiGe/Si membranes 2005 International Semiconductor Device Research Symposium. 2005: 207-208.  0.341
2004 Lagally MG, Blick RH. Materials science: a 'bed of nails' on silicon. Nature. 432: 450-1. PMID 15565134 DOI: 10.1038/432450A  0.381
2004 Yang B, Liu F, Lagally MG. Local strain-mediated chemical potential control of quantum dot self-organization in heteroepitaxy. Physical Review Letters. 92: 025502. PMID 14753943 DOI: 10.1103/Physrevlett.92.025502  0.393
2004 Flack FS, Yang B, Huang M, Marcus M, Simmons J, Castellini OM, Eriksson MA, Liu F, Lagally MG. Pattern formation on silicon-on-insulator Materials Research Society Symposium Proceedings. 854: 1-9. DOI: 10.1557/Proc-859-Jj1.3  0.466
2004 Flack FS, Yang B, Huang M, Marcus M, Simmons J, Castellini OM, Eriksson MA, Liu F, Lagally MG. Pattern Formation on Silicon-on-Insulator Mrs Proceedings. 859. DOI: 10.1557/PROC-859-JJ1.3  0.359
2004 Li AP, Flack F, Lagally MG, Chisholm MF, Yoo K, Zhang Z, Weitering HH, Wendelken JF. Photoluminescence and local structure of Ge nanoclusters on Si without a wetting layer Physical Review B - Condensed Matter and Materials Physics. 69. DOI: 10.1103/Physrevb.69.245310  0.405
2004 Klein LJ, Slinker KA, Truitt JL, Goswami S, Lewis KLM, Coppersmith SN, Van Der Weide DW, Friesen M, Blick RH, Savage DE, Lagally MG, Tahan C, Joynt R, Eriksson MA, Chu JO, et al. Coulomb blockade in a silicon/silicon-germanium two-dimensional electron gas quantum dot Applied Physics Letters. 84: 4047-4049. DOI: 10.1063/1.1751612  0.351
2004 Larson BJ, Gillmor SD, Lagally MG. Controlled deposition of picoliter amounts of fluid using an ultrasonically driven micropipette Review of Scientific Instruments. 75: 832-836. DOI: 10.1063/1.1688436  0.71
2004 Barnes BM, Li Z, Savage DE, Wiedemann E, Lagally MG. Quantifying the thickness of magnetically active layers using x-ray resonant magnetic scattering Journal of Applied Physics. 95: 6654-6656. DOI: 10.1063/1.1667868  0.743
2004 Noh JS, Eom CB, Lagally MG, Sun JZ, Kim HC. Observation of inverse magnetoresistance in perovskite oxide tunnel junctions Physica Status Solidi (B) Basic Research. 241: 1490-1493. DOI: 10.1002/pssb.200304559  0.554
2004 Flack FS, Yang B, Huang M, Marcus M, Simmons J, Castellini OM, Eriksson MA, Liu F, Lagally MG. Pattern formation on silicon-on-insulator Materials Research Society Symposium Proceedings. 854: 1-9.  0.36
2004 Evans PG, Rugheimer PP, Roberts M, Lagally MG, Lee CH, Xiao Y, Lai B, Cai Z. Direct synchrotron x-ray microdiffraction measurements of strain and bending in micromachined silicon devices Applications of X-Rays in Mechanical Engineering 2004. 115-118.  0.776
2003 Huang M, Cuma M, Lagally MG, Liu F. Bending of nanoscale thin Si film induced by growth of Ge islands: Hut vs. dome Materials Research Society Symposium - Proceedings. 791: 183-188. DOI: 10.1557/Proc-791-Q6.4  0.474
2003 Friesen M, Rugheimer P, Savage DE, Lagally MG, Van der Weide DW, Joynt R, Eriksson MA. Practical design and simulation of silicon-based quantum-dot qubits Physical Review B - Condensed Matter and Materials Physics. 67: 1213011-1213014. DOI: 10.1103/Physrevb.67.121301  0.742
2003 Sutter P, Sutter E, Rugheimer P, Lagally MG. Nanoscale strain and band structure engineering using epitaxial stressors on ultrathin silicon-on-insulator Surface Science. 532: 789-794. DOI: 10.1016/S0039-6028(03)00223-1  0.811
2003 Sutter E, Sutter P, Zahl P, Rugheimer P, Lagally MG. Spontaneous transition from epitaxially constrained to equilibrium Ge nanocrystals on silicon-on-insulator (1 0 0) Surface Science. 532: 785-788. DOI: 10.1016/S0039-6028(03)00212-7  0.789
2003 Yoo K, Li AP, Zhang Z, Weitering HH, Flack F, Lagally MG, Wendelken JF. Fabrication of Ge nanoclusters on Si with a buffer layer-assisted growth method Surface Science. 546. DOI: 10.1016/J.Susc.2003.09.029  0.446
2002 Liu F, Huang M, Rugheimer PP, Savage DE, Lagally MG. Nanostressors and the nanomechanical response of a thin silicon film on an insulator. Physical Review Letters. 89: 136101. PMID 12225041 DOI: 10.1103/Physrevlett.89.136101  0.783
2002 Fujikawa Y, Akiyama K, Nagao T, Sakurai T, Lagally MG, Hashimoto T, Morikawa Y, Terakura K. Origin of the stability of Ge(105) on si: a new structure model and surface strain relaxation. Physical Review Letters. 88: 176101-176101. PMID 12005768 DOI: 10.1103/Physrevlett.88.176101  0.489
2002 Liu F, Rugheimer P, Mateeva E, Savage DE, Lagally MG. Nanomechanics: response of a strained semiconductor structure. Nature. 416: 498. PMID 11932735 DOI: 10.1038/416498A  0.783
2002 Yang B, Woll AR, Rugheimer P, Lagally MG. One-dimensional ordering of self-assembled Ge dots on photolithographically patterned structures on Si (001) Materials Research Society Symposium - Proceedings. 715: 239-246. DOI: 10.1557/Proc-715-A8.5  0.79
2002 Lagally MG, Rugheimer PP. Strain engineering in germanium quantum dot growth on silicon and silicon-on-insulator Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 41: 4863-4866. DOI: 10.1143/Jjap.41.4863  0.775
2002 Woll AR, Rugheimer P, Lagally MG. Self-organized quantum dots International Journal of High Speed Electronics and Systems. 12: 45-78. DOI: 10.1142/S0129156402001125  0.76
2002 Tevaarwerk E, Rugheimer P, Castellini OM, Keppel DG, Utley ST, Savage DE, Lagally MG, Eriksson MA. Electrically isolated SiGe quantum dots Applied Physics Letters. 80: 4626-4628. DOI: 10.1063/1.1484251  0.759
2002 Kelly JJ, Barnes BM, Flack F, Lagally DP, Savage DE, Friesen M, Lagally MG. Comparison of magnetic- and chemical-boundary roughness in magnetic films and multilayers Journal of Applied Physics. 91: 9978-9986. DOI: 10.1063/1.1478142  0.724
2002 Woll AR, Rugheimer P, Lagally MG. Strain engineering, self-assembly, and nanoarchitectures in thin SiGe films on Si Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 96: 94-101. DOI: 10.1016/S0921-5107(02)00298-2  0.774
2002 Sutter P, Lagally MG. Nucleationless island formation in SiGe/Si(100) heteroepitaxy Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 89: 45-48. DOI: 10.1016/S0921-5107(01)00788-7  0.46
2002 Hashimoto T, Morikawa Y, Fujikawa Y, Sakurai T, Lagally MG, Terakura K. Rebonded SB step model of Ge/Si(1 0 5)1 × 2: A first-principles theoretical study Surface Science. 513. DOI: 10.1016/S0039-6028(02)01813-7  0.373
2002 Gillmor SD, Rugheimer PP, Lagally MG. Computation with DNA on surfaces Surface Science. 500: 699-721. DOI: 10.1016/S0039-6028(01)01524-2  0.754
2002 Fujikawa Y, Akiyama K, Nagao T, Sakurai T, Lagally MG, Hashimoto T, Morikawa Y, Terakura K. Origin of the stability of Ge(105) on Si: A new structure model and surface strain relaxation Physical Review Letters. 88: 1761011-1761014.  0.398
2002 Woll AR, Moran P, Rehder EM, Yang B, Kuech TF, Lagally MG. Strain relaxation in SiGe thin films studied by low-energy electron microscopy Materials Research Society Symposium - Proceedings. 696: 119-124.  0.401
2001 Woll AR, Moran P, Rehder EM, Yang B, Kuech TF, Lagally MG. Strain Relaxation in SiGe Thin Films Studied by Low-Energy Electron Microscopy Mrs Proceedings. 696. DOI: 10.1557/Proc-696-N4.2  0.344
2001 Liu F, Li AH, Lagally MG. Self-assembly of two-dimensional islands via strain-mediated coarsening Physical Review Letters. 87. DOI: 10.1103/Physrevlett.87.126103  0.308
2001 Zielasek V, Liu F, Zhao Y, Maxson JB, Lagally MG. Surface stress-induced island shape transition in Si(001) homoepitaxy Physical Review B - Condensed Matter and Materials Physics. 64: 2013201-2013204. DOI: 10.1103/Physrevb.64.201320  0.411
2000 Lu ZY, Liu F, Wang CZ, Qin XR, Swartzentruber BS, Lagally MG, Ho KM. Unique dynamic appearance of a Ge-Si Ad-dimer on Si(001) Physical Review Letters. 85: 5603-5606. PMID 11136057 DOI: 10.1103/Physrevlett.85.5603  0.789
2000 Qin XR, Swartzentruber BS, Lagally MG. Diffusional kinetics of SiGe dimers on Si(100) using atom-tracking scanning tunneling microscopy Physical Review Letters. 85: 3660-3663. PMID 11030975 DOI: 10.1103/Physrevlett.85.3660  0.784
2000 Maxson JB, Savage DE, Liu F, Tromp RM, Reuter MC, Lagally MG. Thermal roughening of a thin film: A new type of roughening transition Physical Review Letters. 85: 2152-5. PMID 10970485 DOI: 10.1103/Physrevlett.85.2152  0.805
2000 Li A, Liu F, Petrovykh DY, Lin JL, Viernow J, Himpsel FJ, Lagally MG. Creation of 'quantum platelets' via strain-controlled self-organization at steps Physical Review Letters. 85: 5380-5383. DOI: 10.1103/Physrevlett.85.5380  0.387
2000 Liu S, Jayanthi CS, Wu S, Qin X, Zhang Z, Lagally MG. Formation of chain andV-shaped structures in the initial stage growth ofSi/Si(100) Physical Review B. 61: 4421-4424. DOI: 10.1103/Physrevb.61.4421  0.397
2000 Gillmor SD, Thiel AJ, Strother TC, Smith LM, Lagally MG. Hydrophilic/hydrophobic patterned surfaces as templates for DNA arrays Langmuir. 16: 7223-7228. DOI: 10.1021/La991026A  0.712
2000 Maxson JB, Perkins N, Savage DE, Woll AR, Zhang L, Kuech TF, Lagally MG. Novel dark-field imaging of GaN {0001} surfaces with low-energy electron microscopy Surface Science. 464: 217-222. DOI: 10.1016/S0039-6028(00)00672-5  0.308
1999 Wang L, Liu Q, Frutos AG, Gillmor SD, Thiel AJ, Strother TC, Condon AE, Corn RM, Lagally MG, Smith LM. Surface-based DNA computing operations: DESTROY and READOUT. Bio Systems. 52: 189-91. PMID 10636044 DOI: 10.1016/S0303-2647(99)00046-5  0.7
1999 Liu Q, Frutos AG, Wang L, Thiel AJ, Gillmor SD, Strother CT, Condon AE, Corn RM, Lagally MG, Smith LM. Progress toward demonstration of a surface based DNA computation: a one word approach to solve a model satisfiability problem. Bio Systems. 52: 25-33. PMID 10636027 DOI: 10.1016/S0303-2647(99)00029-5  0.704
1999 Sutter P, Lagally M. Dislocation-Induced Surface Strain on (001) Silicon-On-Insulator Mrs Proceedings. 570. DOI: 10.1557/Proc-570-235  0.445
1999 Sullivan JS, Mateeva E, Evans H, Savage DE, Lagally MG. Properties of Si1-xGex three-dimensional islands Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 17: 2345-2350. DOI: 10.1116/1.581771  0.428
1999 Jaloviar SG, Lin J, Liu F, Zielasek V, McCaughan L, Lagally MG. Step-Induced Optical Anisotropy of Vicinal Si(001) Physical Review Letters. 82: 791-794. DOI: 10.1103/Physrevlett.82.791  0.424
1999 Liu F, Davenport SE, Evans HM, Lagally MG. Self-organized replication of 3D coherent island size and shape in multilayer heteroepitaxial films Physical Review Letters. 82: 2528-2531. DOI: 10.1103/Physrevlett.82.2528  0.387
1999 Sutter P, Lagally MG. Quantitative Determination of Dislocation-Induced Strain at the Surface of (001) Silicon-on-Insulator Physical Review Letters. 82: 1490-1493. DOI: 10.1103/Physrevlett.82.1490  0.42
1999 Qin XR, Lagally MG. View of the empty states of the Si(100)-(2×1) surface via scanning tunneling microscopy imaging at very low biases Physical Review B. 59: 7293-7296. DOI: 10.1103/Physrevb.59.7293  0.407
1999 Mateeva E, Sutter P, Lagally MG. Spontaneous self-embedding of three-dimensional SiGe islands Applied Physics Letters. 74: 567-569. DOI: 10.1063/1.123147  0.324
1999 Venezuela P, Tersoff J, Floro JA, Chason E, Follstaedt DM, Liu F, Lagally MG. Self-organized growth of alloy superlattices Nature. 397: 678-681. DOI: 10.1038/17767  0.397
1999 Sullivan JS, Evans H, Savage DE, Wilson MR, Lagally MG. Mechanisms determining three-dimensional SiGe island density on Si(001) Journal of Electronic Materials. 28: 426-431. DOI: 10.1007/S11664-999-0090-2  0.432
1998 MacKay JF, Pearson DW, Nelms BE, DeLuca PM, Gould MN, Lagally MG. A double mirror W/C multilayer monochromator for radiation biology applications Medical Physics. 25: 773-779. PMID 9608490 DOI: 10.1118/1.598259  0.333
1998 Rudkevich E, Liu F, Savage DE, Kuech TF, McCaughan L, Lagally MG. Hydrogen Induced Si Surface Segregation on Ge-Covered Si(001) Physical Review Letters. 81: 3467-3470. DOI: 10.1103/Physrevlett.81.3467  0.435
1998 Qin XR, Liu F, Swartzentruber BS, Lagally MG. Modification of Si(100) Substrate Bonding by Adsorbed Ge or Si Dimer Islands Physical Review Letters. 81: 2288-2291. DOI: 10.1103/Physrevlett.81.2288  0.801
1998 Liu F, Tersoff J, Lagally MG. Self-Organization of Steps in Growth of Strained Films on Vicinal Substrates Physical Review Letters. 80: 1268-1271. DOI: 10.1103/Physrevlett.80.1268  0.382
1998 Sutter P, Mateeva E, Sullivan J, Lagally M. Low-energy electron microscopy of nanoscale three-dimensional SiGe islands on Si(100) Thin Solid Films. 336: 262-270. DOI: 10.1016/S0040-6090(98)01308-X  0.471
1998 Liu F, Lagally MG. Strain-induced self-organization of steps and islands in SiGe/Si multilayer films Metallurgical and Materials Transactions a-Physical Metallurgy and Materials Science. 29: 2111-2119. DOI: 10.1007/S11661-998-0036-Y  0.408
1998 Teichert C, Bean JC, Lagally MG. Self-organized nanostructures in Si 1-x Ge x films on Si(001) Applied Physics A. 67: 675-685. DOI: 10.1007/S003390050839  0.395
1997 Qin XR, Lagally MG. Adatom Pairing Structures for Ge on Si(100): The Initial Stage of Island Formation Science. 278: 1444-1447. PMID 9367953 DOI: 10.1126/Science.278.5342.1444  0.429
1997 Zhang Z, Lagally MG. Atomistic Processes in the Early Stages of Thin-Film Growth Science. 276: 377-383. PMID 9103189 DOI: 10.1126/Science.276.5311.377  0.311
1997 Zhang Z, Wu F, Lagally MG. AN ATOMISTIC VIEW OF Si(001) HOMOEPITAXY Annual Review of Materials Science. 27: 525-553. DOI: 10.1146/Annurev.Matsci.27.1.525  0.305
1997 Rudkevich E, Savage DE, Cai W, Bean JC, Sullivan JS, Nayak S, Kuech TF, McCaughan L, Lagally MG. Extended-spectral-range Fourier transform infrared-attenuated total reflection spectroscopy on Si surfaces using a novel Si coated Ge attenuated total reflection prism Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 15: 2153-2157. DOI: 10.1116/1.580622  0.417
1997 Mateeva E, Sutter P, Bean JC, Lagally MG. Mechanism of organization of three-dimensional islands in SiGe/Si multilayers Applied Physics Letters. 71: 3233-3235. DOI: 10.1063/1.120300  0.426
1997 Liu F, Lagally M. Self-organized nanoscale structures in films Surface Science. 386: 169-181. DOI: 10.1016/S0039-6028(97)00303-8  0.397
1997 Liu F, Salling C, Lagally M. Unique edge structure and stability of fabricated dimer islands on Si(001) Surface Science. 370: L213-L218. DOI: 10.1016/S0039-6028(96)01172-7  0.444
1996 Tersoff J, Teichert C, Lagally MG. Self-organization in growth of quantum dot superlattices. Physical Review Letters. 76: 1675-1678. PMID 10060489 DOI: 10.1103/Physrevlett.76.1675  0.338
1996 Ebert P, Heinrich M, Simon M, Domke C, Urban K, Shih CK, Webb MB, Lagally MG. Thermal formation of Zn-dopant-vacancy defect complexes on InP(110) surfaces. Physical Review. B, Condensed Matter. 53: 4580-4590. PMID 9984016 DOI: 10.1103/Physrevb.53.4580  0.633
1996 Kravchenko I, Salling C, Lagally M. Antimony Cluster Manipulation on the Si(001) Surface by Means of STM Mrs Proceedings. 448. DOI: 10.1557/Proc-448-205  0.304
1996 Lin JL, Jaloviar SG, Mantese L, Aspnes DE, McCaughan L, Lagally MG. Comparative study of the reflectance difference spectrum from Si(001) using reflectance difference spectroscopy/low-energy electron diffraction/ scanning tunneling microscopy Materials Research Society Symposium - Proceedings. 406: 401-405. DOI: 10.1557/Proc-406-401  0.398
1996 ZHANG Z, WU F, LAGALLY MG. KINETICS, DYNAMICS AND MUTUAL INTERACTIONS OF DEFECTS ON Si(001) Surface Review and Letters. 3: 1449-1462. DOI: 10.1142/S0218625X96002461  0.329
1996 Ma J, Garni B, Perkins N, O’Brien WL, Kuech TF, Lagally MG. Photoemission spectroscopy studies of the surface of GaN films grown by vapor phase epitaxy Applied Physics Letters. 69: 3351-3353. DOI: 10.1063/1.117303  0.331
1996 Garni B, Ma J, Perkins N, Liu J, Kuech TF, Lagally MG. Scanning tunneling microscopy and tunneling luminescence of the surface of GaN films grown by vapor phase epitaxy Applied Physics Letters. 68: 1380-1382. DOI: 10.1063/1.116086  0.359
1996 Nayak S, Huang JW, Redwing JM, Savage DE, Lagally MG, Kuech TF. Influence of oxygen on surface morphology of metalorganic vapor phase epitaxy grown GaAs (001) Applied Physics Letters. 68: 1270-1272. DOI: 10.1063/1.115949  0.317
1995 Zhang Z, Wu F, Zandvliet HJ, Poelsema B, Metiu H, Lagally MG. Energetics and dynamics of Si Ad-dimers on Si(001). Physical Review Letters. 74: 3644-3647. PMID 10058257 DOI: 10.1103/Physrevlett.74.3644  0.399
1995 Vasek JE, Zhang Z, Salling CT, Lagally MG. Effects of hydrogen impurities on the diffusion, nucleation, and growth of Si on Si(001). Physical Review B. 51: 17207-17210. PMID 9978738 DOI: 10.1103/Physrevb.51.17207  0.408
1995 Ebert P, Heinrich M, Simon M, Urban K, Lagally MG. Formation of anion vacancies by Langmuir evaporation from InP and GaAs (110) surfaces at low temperatures. Physical Review. B, Condensed Matter. 51: 9696-9701. PMID 9977635 DOI: 10.1103/Physrevb.51.9696  0.304
1995 Nayak S, Savage D, Chu H, Lagally M, Kuech T. In situ RHEED and AFM investigation of growth front morphology evolution of Si(001) grown by UHV-CVD Journal of Crystal Growth. 157: 168-171. DOI: 10.1016/0022-0248(95)00383-5  0.399
1994 Nayak S, Redwing J, Huang J, Lagally M, Kuech T. Influence of Impurities On Mechanisms of Growth in Movpe GaAs Mrs Proceedings. 367. DOI: 10.1557/Proc-367-293  0.413
1994 Nayak S, Redwing J, Kuech T, Savage D, Lagally M. Interfacial Roughness in GaAs/A1GaAs Multilayers: Influence of Controlled Impurity Addition Mrs Proceedings. 332. DOI: 10.1557/Proc-332-249  0.31
1994 Ebert P, Urban K, Lagally MG. Charge state dependent structural relaxation around anion vacancies on InP(110) and GaP(110) surfaces Physical Review Letters. 72: 840-843. DOI: 10.1103/Physrevlett.72.840  0.314
1994 Geisz JF, Kuech TF, Lagally MG, Cardone F, Potemski RM. Film stress of sputtered W/C multilayers and strain relaxation upon annealing Journal of Applied Physics. 75: 1530-1533. DOI: 10.1063/1.356390  0.418
1994 Redwing JM, Nayak S, Savage DE, Lagally MG, Dawson-Elli DF, Kuech TF. The effect of controlled impurity incorporation on interfacial roughness in GaAs/AlxGa1-xAs superlattice structures grown by metalorganic vapor phase epitaxy Journal of Crystal Growth. 145: 792-798. DOI: 10.1016/0022-0248(94)91144-4  0.356
1993 Heller EJ, Zhang ZY, Lagally MG. Step and kink energetics on GaAs(001). Physical Review Letters. 71: 743-746. PMID 10055355 DOI: 10.1103/Physrevlett.71.743  0.313
1993 Wu F, Jaloviar SG, Savage DE, Lagally MG. Roughening of steps during homoepitaxial growth on Si(001). Physical Review Letters. 71: 4190-4193. PMID 10055179 DOI: 10.1103/Physrevlett.71.4190  0.394
1993 Kitamura N, Swartzentruber BS, Lagally MG, Webb MB. Variable-temperature STM measurements of step kinetics on Si(001). Physical Review. B, Condensed Matter. 48: 5704-5707. PMID 10009100 DOI: 10.1103/Physrevb.48.5704  0.793
1993 Lagally M, Savage D. Quantitative Electron Diffraction from Thin Films Mrs Bulletin. 18: 24-31. DOI: 10.1557/S0883769400043414  0.333
1993 Geisz JF, Phang YH, Kuech TF, Lagally MG, Cardone F, Potemski RM. Strain Relaxation and Oxide Formation on Annealed W/C Multilayers Mrs Proceedings. 321. DOI: 10.1557/Proc-321-215  0.403
1993 Nayak S, Redwing JM, Kuech TF, Phang Y, Savage DE, Lagally MG. X-Ray Diffraction Determination of Interface Roughness in GaAs/AlxGa1-xAs Multilayers Mrs Proceedings. 312. DOI: 10.1557/Proc-312-137  0.301
1993 Lagally MG. An Atomic-Level View of Kinetic and Thermodynamic Influences in the Growth of Thin Films Japanese Journal of Applied Physics. 32: 1493-1501. DOI: 10.1143/Jjap.32.1493  0.311
1993 Phang YH, Savage DE, Kariotis R, Lagally MG. X‐ray diffraction measurement of partially correlated interfacial roughness in multilayers Journal of Applied Physics. 74: 3181-3188. DOI: 10.1063/1.354588  0.315
1992 Miguel JJD, Aumann CE, Jaloviar SG, Kariotis R, Lagally MG. Experimental determination of the strain potentials on vicinal Si(001) surfaces. Physical Review B. 46: 10257-10261. PMID 10002869 DOI: 10.1103/Physrevb.46.10257  0.441
1992 Savage DE, Schimke N, Phang Y, Lagally MG. Interfacial roughness correlation in multilayer films: Influence of total film and individual layer thicknesses Journal of Applied Physics. 71: 3283-3293. DOI: 10.1063/1.350976  0.32
1992 Phang YH, Savage DE, Kuech TF, Lagally MG, Park JS, Wang KL. X‐ray diffraction determination of interfacial roughness correlation in SixGe1−x/Si and GaAs/AlxGa1−xAs superlattices Applied Physics Letters. 60: 2986-2988. DOI: 10.1063/1.106784  0.399
1992 Mo YW, Lagally MG. Scanning tunneling microscopy studies of the initial stages of germanium growth on Si(001) Materials Science and Engineering B. 14: 311-316. DOI: 10.1016/0921-5107(92)90314-Y  0.386
1992 Mo YW, Kleiner J, Webb MB, Lagally MG. Surface self-diffusion of Si on Si(001) Surface Science. 268: 275-295. DOI: 10.1016/0039-6028(92)90968-C  0.684
1992 Aumann C, de Miguel J, Kariotis R, Lagally M. Temperature dependence of the step structure of vicinal Si(001) surfaces Surface Science. 275: 1-15. DOI: 10.1016/0039-6028(92)90643-K  0.407
1991 Miguel JJD, Aumann CE, Kariotis R, Lagally MG. Evolution of vicinal Si(001) from double- to single-atomic-height steps with temperature. Physical Review Letters. 67: 2830-2833. PMID 10044566 DOI: 10.1103/Physrevlett.67.2830  0.394
1991 Mo YW, Kleiner J, Webb MB, Lagally MG. Activation energy for surface diffusion of Si on Si(001): A scanning-tunneling-microscopy study. Physical Review Letters. 66: 1998-2001. PMID 10043364 DOI: 10.1103/Physrevlett.66.1998  0.707
1991 Heller EJ, Lagally MG. Scanning Tunnelling Microscopy Investigation of Surface Morphology in the Growth of GaAs(001) Mrs Proceedings. 237. DOI: 10.1557/Proc-237-249  0.373
1991 Swartzentruber BS, Mo YW, Lagally MG. Domain boundary control of edge roughness in vicinal Si(001) Applied Physics Letters. 58: 822-824. DOI: 10.1063/1.104500  0.766
1991 Mo Y, Lagally M. Anisotropy in surface migration of Si and Ge on Si(001) Surface Science Letters. 248: A244. DOI: 10.1016/0167-2584(91)90320-Q  0.443
1991 Mo YW, Lagally MG. Anisotropy in surface migration of Si and Ge on Si(001) Surface Science. 248: 313-320. DOI: 10.1016/0039-6028(91)91177-Y  0.334
1991 Webb MB, Men FK, Swartzentruber BS, Kariotis R, Lagally MG. Surface step configurations under strain: kinetics and step-step interactions Surface Science. 242: 23-31. DOI: 10.1016/0039-6028(91)90236-L  0.806
1991 Mo YW, Lagally MG. Scanning tunneling microscopy studies of the growth process of Ge on Si(001) Journal of Crystal Growth. 111: 876-881. DOI: 10.1016/0022-0248(91)91100-O  0.411
1991 Lagally MG. Adatome auf Festkörperoberflächen Physik Journal. 47: 383-385. DOI: 10.1002/Phbl.19910470507  0.315
1990 Mo Y, Savage DE, Swartzentruber BS, Lagally MG. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001). Physical Review Letters. 65: 1020-1023. PMID 10043085 DOI: 10.1103/Physrevlett.65.1020  0.755
1990 Swartzentruber BS, Mo Y, Kariotis R, Lagally MG, Webb MB. Direct determination of step and kink energies on vicinal Si(001). Physical Review Letters. 65: 1913-1916. PMID 10042396 DOI: 10.1103/Physrevlett.65.1913  0.809
1990 MO Y, LAGALLY M. KINETIC PATHWAY IN STRANSKI-KRASTANOV GROWTH OF Ge ON Si(001) Modern Physics Letters B. 4: 1379-1384. DOI: 10.1142/S0217984990001732  0.363
1990 Swartzentruber BS, Mo YW, Webb MB, Lagally MG. Observations of strain effects on the Si(001) surface using scanning tunneling microscopya) Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 8: 210-213. DOI: 10.1116/1.577068  0.819
1990 Mo YW, Kariotis R, Swartzentruber BS, Webb MB, Lagally MG. Scanning tunneling microscopy study of diffusion, growth, and coarsening of Si on Si (001) Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 8: 201-206. DOI: 10.1116/1.577066  0.819
1990 Webb MB, Men FK, Swartzentruber BS, Lagally MG. The effect of external stress on Si surfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 8: 2658-2661. DOI: 10.1116/1.576689  0.819
1990 Kariotis R, Swartzentruber BS, Lagally MG. Model diffraction profiles parallel to rough step edges Journal of Applied Physics. 67: 2848-2852. DOI: 10.1063/1.345454  0.745
1990 Garni B, Savage D, Lagally M. RHEED study of the kinetics of the (2 × 1)-to-(7 × 7) transformation in cleaved Si(111) Surface Science. 235: L324-L328. DOI: 10.1016/0039-6028(90)90781-3  0.329
1990 Kleiner J, Aumann CE, Mo YW, Kariotis R, Lagally MG. Model two-dimensional diffraction profiles from disordered vicinal surfaces and random island configurations Surface Science. 240: 293-305. DOI: 10.1016/0039-6028(90)90748-W  0.356
1989 Mo Y, Swartzentruber BS, Kariotis R, Webb MB, Lagally MG. Growth and equilibrium structures in the epitaxy of Si on Si(001). Physical Review Letters. 63: 2393-2396. PMID 10040877 DOI: 10.1103/Physrevlett.63.2393  0.822
1989 Swartzentruber BS, Mo Y, Webb MB, Lagally MG. Scanning tunneling microscopy studies of structural disorder and steps on Si surfaces Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 7: 2901-2905. DOI: 10.1116/1.576167  0.822
1989 Tringides MC, Luscombe JH, Lagally MG. Diffusive disordering kinetics in one dimension Physical Review B. 39: 9377-9383. DOI: 10.1103/Physrevb.39.9377  0.558
1989 Lagally MG, Kariotis R, Swartzentruber BS, Mo YW. Ordering kinetics at surfaces Ultramicroscopy. 31: 87-98. DOI: 10.1016/0304-3991(89)90038-7  0.779
1989 Mo Y, Kariotis R, Savage D, Lagally M. Anisotropic growth and “layer-by-layer” epitaxy Surface Science Letters. 219: L551-L559. DOI: 10.1016/0167-2584(89)90266-1  0.412
1989 Haneman D, Rownd J, Lagally M. Measurement of conversion temperatures for Si(111) 2 × 1 Surface Science Letters. 224: L965-L968. DOI: 10.1016/0167-2584(89)90135-7  0.341
1989 Mo YW, Kariotis R, Savage DE, Lagally MG. Anisotropic growth and "layer-by-layer" epitaxy Surface Science. 219. DOI: 10.1016/0039-6028(89)90499-8  0.416
1989 Kariotis R, Lagally M. Rate equation modelling of epitaxial growth Surface Science. 216: 557-578. DOI: 10.1016/0039-6028(89)90395-6  0.302
1988 Heller EJ, Savage DE, Lagally MG. Quantitative reflection high‐energy electron diffraction measurements of surface roughness in GaAs(100) Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 6: 1484-1485. DOI: 10.1116/1.575344  0.37
1988 Aumann CE, Savage DE, Kariotis R, Lagally MG. Step structure and dimer row correlations in vicinal Si(100) Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 6: 1963-1965. DOI: 10.1116/1.575216  0.348
1988 Pico CA, Lagally MG. Kinetics of titanium silicide formation on single‐crystal Si: Experiment and modeling Journal of Applied Physics. 64: 4957-4967. DOI: 10.1063/1.342445  0.433
1988 Tringides MC, Lagally MG. The use of peak intensity in diffraction measurements of growth kinetics on surfaces Surface Science. 195. DOI: 10.1016/0039-6028(88)90339-1  0.546
1987 Martin JA, Aumann CE, Moritz W, Savage DE, Kretschmar F, Tringides MC, Lagally MG. Atomic steps on Si(100) surfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 5: 615-618. DOI: 10.1116/1.574685  0.619
1987 Savage DE, Lagally MG. Direct observation by reflection high‐energy electron diffraction of amorphous‐to‐crystalline transition in the growth of Sb on GaAs(110) Applied Physics Letters. 50: 1719-1721. DOI: 10.1063/1.97726  0.339
1987 Saloner D, Martin JA, Tringides MC, Savage DE, Aumann CE, Lagally MG. Determination of terrace size and edge roughness in vicinal Si{100} surfaces by surface-sensitive diffraction Journal of Applied Physics. 61: 2884-2893. DOI: 10.1063/1.337885  0.616
1986 Martin JA, Savage DE, Moritz W, Lagally MG. Structure, stability, and origin of (2perp) phases on Si(100). Physical Review Letters. 56: 1936-1939. PMID 10032815 DOI: 10.1103/Physrevlett.56.1936  0.406
1986 Pico CA, Tran NC, Jacobs JR, Lagally MG. Comparison of Kinetics of TiSi2 Formation on Si(100) and Si(111) Mrs Proceedings. 71. DOI: 10.1557/Proc-71-315  0.433
1986 Savage DE, Lagally MG. Reflection high‐energy electron diffraction study of the growth of In on GaAs(110) at different temperatures Journal of Vacuum Science & Technology B. 4: 943-954. DOI: 10.1116/1.583496  0.348
1986 Belkind A, Ezell E, Dror M, Luo WA, Jacobs JR, Lagally MG. Compositional and morphological analysis of AgCl films deposited by evaporation and R.F. sputtering Thin Solid Films. 142: 113-125. DOI: 10.1016/0040-6090(86)90307-X  0.302
1986 Tringides M, Wu PK, Moritz W, Lagally MG. Ordering Kinetics for O on W(110) Berichte Der Bunsengesellschaft FüR Physikalische Chemie. 90: 277-281. DOI: 10.1002/bbpc.19860900324  0.432
1985 Savage DE, Lagally MG. Crystallography of In on GaAs(110): Possible relationship of laterally inhomogeneous structure of Fermi-level pinning. Physical Review Letters. 55: 959-962. PMID 10032493 DOI: 10.1103/Physrevlett.55.959  0.35
1985 Lagally MG. 5. Diffraction Techniques Methods in Experimental Physics. 22: 237-298. DOI: 10.1016/S0076-695X(08)60319-1  0.323
1984 Clearfield HM, Lagally MG. Initial ordering kinetics of a randomly stepped GaAs(110) surface Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 2: 844-846. DOI: 10.1116/1.572523  0.327
1983 Lagally MG. Analysis of surface structural defects using LEED and RHEED Ultramicroscopy. 11: 103-104. DOI: 10.1016/0304-3991(83)90224-3  0.358
1982 Lu T, Lagally MG. Phase Reeationships for Adsoreed Layers on Surfaces Mrs Proceedings. 19. DOI: 10.1557/Proc-19-313  0.346
1982 Lagally MG. The present status of low-energy electron diffraction Applications of Surface Science. 13: 260-281. DOI: 10.1016/0378-5963(82)90031-9  0.3
1981 Welkie DG, Lagally MG. Analysis of Surface Structural Defects by Low Energy Electron Diffraction Mrs Proceedings. 10. DOI: 10.1557/Proc-10-227  0.382
1981 Clearfield HM, Welkie DG, Lu T, Lagally MG. LEED investigation of extended defects at the surface of Ge films grown epitaxially on GaAs(110) Journal of Vacuum Science and Technology. 19: 323-330. DOI: 10.1116/1.571057  0.365
1981 Clearfield HM, Welkie DG, Lagally MG. Summary Abstract: Low‐energy electron diffraction study of the surface‐defect structure of Ge grown epitaxially on GaAs(110) Journal of Vacuum Science and Technology. 18: 802-803. DOI: 10.1116/1.570951  0.361
1981 Lagally MG, Welkie DG. Defect structures at solid surfaces Surface and Interface Analysis. 3: 8-11. DOI: 10.1002/Sia.740030106  0.317
1980 Lagally MG, Lu T‐, Welkie DG. Surface defects and thermodynamics of chemisorbed layers Journal of Vacuum Science and Technology. 17: 223-230. DOI: 10.1116/1.570442  0.308
1980 Lu T, Lagally M. The resolving power of a low-energy electron diffractometer and the analysis of surface defects Surface Science. 99: 695-713. DOI: 10.1016/0039-6028(80)90563-4  0.312
1978 Lagally MG, Wang G, Lu T. Chemisorption: Island formation and adatom interactions Critical Reviews in Solid State and Materials Sciences. 7: 233-259. DOI: 10.1080/10408437808243440  0.617
1978 Ramaker DE, Murday JS, Turner NH, Moore G, Lagally MG, Houston J. CALCULATED AND MEASURED AUGER LINESHAPES IN SiO//2 . 99-104. DOI: 10.1016/B978-0-08-023049-8.50023-3  0.344
1977 Moore G, Guckel H, Lagally MG. Auger investigation of boron‐doped SiO2/Si Journal of Vacuum Science and Technology. 14: 70-74. DOI: 10.1116/1.569176  0.403
1977 Guckel H, Larsen S, Lagally MG, Moore G, Miller JB, Wiley JD. Electromechanical devices utilizing thin Si diaphragms Applied Physics Letters. 31: 618-619. DOI: 10.1063/1.89802  0.349
1977 Houston JE, Moore G, Lagally MG. Transition density of states for Si(100) from L1L23V and L23VV Auger spectra Solid State Communications. 21: 879-882. DOI: 10.1016/0038-1098(77)90354-4  0.341
1974 Webb MB, Lagally MG. Elastic Scattering of Low-Energy Electrons from Surfaces Solid State Physics - Advances in Research and Applications. 28: 301-405. DOI: 10.1016/S0081-1947(08)60205-2  0.624
1974 Buchholz JC, Lagally MG, Webb MB. Fourier inversion of LEED data Surface Science. 41: 248-256. DOI: 10.1016/0039-6028(74)90307-0  0.608
1973 Ngoc TC, Lagally MG, Webb MB. A method to obtain kinematic intensities from low-energy electron diffraction data Surface Science. 35: 117-144. DOI: 10.1016/0039-6028(73)90208-2  0.632
1972 Lagally MG, Ngoc TC, Webb MB. Averaged Low-Energy Electron Diffraction Intensities from Ni(111) Journal of Vacuum Science and Technology. 9: 645-649. DOI: 10.1116/1.1317744  0.628
1971 Lagally MG, Ngoc TC, Webb MB. Kinematic low-energy electron-diffraction intensities from averaged data: A method for surface crystallography Physical Review Letters. 26: 1557-1560. DOI: 10.1103/Physrevlett.26.1557  0.634
1971 Lagally MG, Ngoc TC, Webb MB. Consequences of the reciprocity theorem in low-energy electron diffraction Surface Science. 25: 444-450. DOI: 10.1016/0039-6028(71)90263-9  0.613
1968 Barnes RF, Lagally MG, Webb MB. Multiphonon scattering of low-energy electrons Physical Review. 171: 627-633. DOI: 10.1103/Physrev.171.627  0.616
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