Eric J. Buchovecky, Ph.D. - Publications

Affiliations: 
2010 Brown University, Providence, RI 
Area:
Applied Mechanics, Materials Science Engineering, Mechanical Engineering

7 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2017 Pei F, Buchovecky E, Bower A, Chason E. Stress evolution and whisker growth during thermal cycling of Sn films: A comparison of analytical modeling and experiments Acta Materialia. 129: 462-473. DOI: 10.1016/J.Actamat.2017.03.005  0.673
2016 Pei F, Jadhav N, Buchovecky E, Bower AF, Chason E, Liu W, Tischler JZ, Ice GE, Xu R. In-situ synchrotron micro-diffraction study of surface, interface, grain structure, and strain/stress evolution during Sn whisker/hillock formation Journal of Applied Physics. 119. DOI: 10.1063/1.4942920  0.628
2013 Chason E, Jadhav N, Pei F, Buchovecky E, Bower A. Growth of whiskers from Sn surfaces: Driving forces and growth mechanisms Progress in Surface Science. 88: 103-131. DOI: 10.1016/J.Progsurf.2013.02.002  0.711
2010 Jadhav N, Buchovecky EJ, Reinbold L, Kumar S, Bower AF, Chason E. Understanding the correlation between intermetallic growth, stress evolution, and Sn whisker nucleation Ieee Transactions On Electronics Packaging Manufacturing. 33: 183-192. DOI: 10.1109/Tepm.2010.2043847  0.689
2010 Jadhav N, Buchovecky E, Chason E, Bower A. Real-time SEM/FIB studies of whisker growth and surface modification Jom. 62: 30-37. DOI: 10.1007/S11837-010-0105-8  0.621
2009 Buchovecky EJ, Du N, Bower AF. A model of Sn whisker growth by coupled plastic flow and grain boundary diffusion Applied Physics Letters. 94. DOI: 10.1063/1.3136865  0.625
2009 Buchovecky E, Jadhav N, Bower AF, Chason E. Finite element modeling of stress evolution in Sn films due to growth of the Cu 6Sn 5 intermetallic compound Journal of Electronic Materials. 38: 2676-2684. DOI: 10.1007/S11664-009-0911-3  0.691
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