| Year |
Citation |
Score |
| 2020 |
Wager JF. Corrections to ``Electronic Conduction Mechanisms in Insulators'' Ieee Transactions On Electron Devices. 1-1. DOI: 10.1109/Ted.2020.3016911 |
0.302 |
|
| 2019 |
Mohd Daut MH, Wager JF, Nathan A. ZnON MIS Thin-Film Diodes Ieee Journal of the Electron Devices Society. 7: 375-381. DOI: 10.1109/Jeds.2019.2900542 |
0.342 |
|
| 2019 |
Jenkins MA, McGlone JM, Wager JF, Conley JF. Internal photoemission spectroscopy determination of barrier heights between Ta-based amorphous metals and atomic layer deposited insulators Journal of Applied Physics. 125: 55301. DOI: 10.1063/1.5066569 |
0.371 |
|
| 2019 |
Pelatt BD, Wager JF, Keszler DA. Elucidation of bonding trends from variability in Atomic Solid State Energies Journal of Solid State Chemistry. 274: 337-351. DOI: 10.1016/J.Jssc.2019.01.039 |
0.302 |
|
| 2018 |
Perkins CK, Jenkins M, Chiang TH, Mansergh RH, Gouliouk V, Kenane N, Wager J, Conley JF, Keszler DA. Demonstration of Fowler-Nordheim tunneling in simple solution-processed thin film. Acs Applied Materials & Interfaces. PMID 30259732 DOI: 10.1021/Acsami.8B08986 |
0.468 |
|
| 2018 |
Chiang T, Wager JF. Electronic Conduction Mechanisms in Insulators Ieee Transactions On Electron Devices. 65: 223-230. DOI: 10.1109/Ted.2017.2776612 |
0.367 |
|
| 2018 |
Mcglone JM, Pommerenck JK, Graham MW, Wager JF. Amorphous Metal Thin Films for Thermal Inkjet Printing Journal of Microelectromechanical Systems. 27: 289-295. DOI: 10.1109/Jmems.2018.2794539 |
0.379 |
|
| 2017 |
McGlone JM, Olsen KR, Stickle WF, Abbott JE, Pugliese RA, Long GS, Keszler DA, Wager JF. TaWSi amorphous metal thin films: composition tuning to improve thermal stability Mrs Communications. 7: 715-720. DOI: 10.1557/Mrc.2017.77 |
0.371 |
|
| 2017 |
Stewart KA, Gouliouk V, McGlone JM, Wager JF. Side-by-Side Comparison of Single- and Dual-Active Layer Oxide TFTs: Experiment and TCAD Simulation Ieee Transactions On Electron Devices. 64: 4131-4136. DOI: 10.1109/Ted.2017.2743062 |
0.44 |
|
| 2017 |
Heo J, Yu L, Altschul E, Waters BE, Wager JF, Zunger A, Keszler DA. CuTaS3: Intermetal d–d Transitions Enable High Solar Absorption Chemistry of Materials. 29: 2594-2598. DOI: 10.1021/Acs.Chemmater.6B04730 |
0.367 |
|
| 2017 |
Stewart KA, Gouliouk V, Keszler DA, Wager JF. Sputtered boron indium oxide thin-film transistors Solid-State Electronics. 137: 80-84. DOI: 10.1016/J.Sse.2017.08.004 |
0.45 |
|
| 2017 |
Wager JF. Low-field transport in SiO2 Journal of Non-Crystalline Solids. 459: 111-115. DOI: 10.1016/J.Jnoncrysol.2016.12.038 |
0.325 |
|
| 2016 |
Wager JF, Kuhn K. Device Physics Modeling of Surfaces and Interfaces from an Induced Gap State Perspective Critical Reviews in Solid State and Materials Sciences. 42: 373-415. DOI: 10.1080/10408436.2016.1223013 |
0.375 |
|
| 2016 |
Ravichandran R, Wang AX, Wager JF. Solid state dielectric screening versus band gap trends and implications Optical Materials. 60: 181-187. DOI: 10.1016/J.Optmat.2016.07.027 |
0.335 |
|
| 2016 |
Stewart KA, Wager JF. Thin-film transistor mobility limits considerations Journal of the Society For Information Display. 24: 386-393. DOI: 10.1002/Jsid.452 |
0.435 |
|
| 2015 |
Plassmeyer PN, Archila K, Wager JF, Page CJ. Lanthanum aluminum oxide thin-film dielectrics from aqueous solution. Acs Applied Materials & Interfaces. 7: 1678-84. PMID 25532438 DOI: 10.1021/Am507271E |
0.464 |
|
| 2015 |
Chiang TH, Yeh BS, Wager JF. Amorphous IGZO Thin-Film Transistors with Ultrathin Channel Layers Ieee Transactions On Electron Devices. 62: 3692-3696. DOI: 10.1109/Ted.2015.2478700 |
0.416 |
|
| 2015 |
Nadarajah A, Wu MZB, Archila K, Kast MG, Smith AM, Chiang TH, Keszler DA, Wager JF, Boettcher SW. Amorphous In-Ga-Zn Oxide Semiconducting Thin Films with High Mobility from Electrochemically Generated Aqueous Nanocluster Inks Chemistry of Materials. 27: 5587-5596. DOI: 10.1021/Acs.Chemmater.5B01813 |
0.402 |
|
| 2015 |
Oleksak RP, Hostetler EB, Flynn BT, McGlone JM, Landau NP, Wager JF, Stickle WF, Herman GS. Thermal oxidation of Zr-Cu-Al-Ni amorphous metal thin films Thin Solid Films. 595: 209-213. DOI: 10.1016/J.Tsf.2015.10.080 |
0.431 |
|
| 2015 |
Pelatt BD, Kokenyesi RS, Ravichandran R, Pereira CB, Wager JF, Keszler DA. Atomic solid state energy scale: Universality and periodic trends in oxidation state Journal of Solid State Chemistry. 231: 138-144. DOI: 10.1016/J.Jssc.2015.07.037 |
0.325 |
|
| 2015 |
Stewart KA, Yeh BS, Wager JF. Amorphous semiconductor mobility limits Journal of Non-Crystalline Solids. DOI: 10.1016/J.Jnoncrysol.2015.10.005 |
0.375 |
|
| 2015 |
McGlone JM, Olsen KR, Stickle WF, Abbott JE, Pugliese RA, Long GS, Keszler DA, Wager JF. Ta-based amorphous metal thin films Journal of Alloys and Compounds. 650: 102-105. DOI: 10.1016/J.Jallcom.2015.07.226 |
0.393 |
|
| 2015 |
Hoshino K, Wager J. Negative bias illumination stress assessment of indium gallium zinc oxide thin‐film transistors Journal of the Society For Information Display. 23: 187-195. DOI: 10.1002/Jsid.267 |
0.628 |
|
| 2014 |
Zhou F, Yeh B, Archila KA, Wager JF. Mobility Assessment of Depletion-Mode Oxide Thin-Film Transistors Using the Comprehensive Depletion-Mode Model Ecs Journal of Solid State Science and Technology. 3. DOI: 10.1149/2.004409Jss |
0.36 |
|
| 2014 |
Alimardani N, McGlone JM, Wager JF, Conley JF. Conduction processes in metal-insulator-metal diodes with Ta 2O5 and Nb2O5 insulators deposited by atomic layer deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 32. DOI: 10.1116/1.4843555 |
0.406 |
|
| 2014 |
Muir SW, Cowell EW, Wang W, Wager JF, Keszler DA. Effects of oxygen incorporation on the physical properties of amorphous metal thin films Journal of Physical Chemistry C. 118: 9647-9651. DOI: 10.1021/Jp412823R |
0.778 |
|
| 2014 |
Wager JF, Yeh B, Hoffman RL, Keszler DA. An amorphous oxide semiconductor thin-film transistor route to oxide electronics Current Opinion in Solid State and Materials Science. 18: 53-61. DOI: 10.1016/J.Cossms.2013.07.002 |
0.413 |
|
| 2013 |
Cowell EW, Muir SW, Keszler DA, Wager JF. Barrier height estimation of asymmetric metal-insulator-metal tunneling diodes Journal of Applied Physics. 114. DOI: 10.1063/1.4839695 |
0.751 |
|
| 2013 |
Itthibenchapong V, Kokenyesi RS, Ritenour AJ, Zakharov LN, Boettcher SW, Wager JF, Keszler DA. Earth-abundant Cu-based chalcogenide semiconductors as photovoltaic absorbers Journal of Materials Chemistry C. 1: 657-662. DOI: 10.1039/C2Tc00106C |
0.334 |
|
| 2013 |
Wager JF, Yeh B. Oxide Thin-Film Transistors. Device Physics Semiconductors and Semimetals. 88: 283-315. DOI: 10.1016/B978-0-12-396489-2.00009-6 |
0.442 |
|
| 2013 |
Hoshino K, Yeh B, Wager JF. Impact of humidity on the electrical performance of amorphous oxide semiconductor thin-film transistors Journal of the Society For Information Display. 21: 310-316. DOI: 10.1002/Jsid.184 |
0.647 |
|
| 2012 |
Lany S, Zakutayev A, Mason TO, Wager JF, Poeppelmeier KR, Perkins JD, Berry JJ, Ginley DS, Zunger A. Surface origin of high conductivities in undoped In2O3 thin films. Physical Review Letters. 108: 016802. PMID 22304278 DOI: 10.1103/Physrevlett.108.016802 |
0.35 |
|
| 2012 |
Alimardani N, Cowell EW, Wager JF, Conley JF, Evans DR, Chin M, Kilpatrick SJ, Dubey M. Impact of electrode roughness on metal-insulator-metal tunnel diodes with atomic layer deposited Al 2O 3 tunnel barriers Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 30. DOI: 10.1116/1.3658380 |
0.774 |
|
| 2012 |
Sundholm ES, Presley RE, Hoshino K, Knutson CC, Hoffman RL, Mourey DA, Keszler DA, Wager JF. Passivation of amorphous oxide semiconductors utilizing a zinc-tin-silicon-oxide barrier layer Ieee Electron Device Letters. 33: 836-838. DOI: 10.1109/Led.2012.2191530 |
0.793 |
|
| 2012 |
Cowell EW, Knutson CC, Kuhta NA, Stickle W, Keszler DA, Wager JF. Engineering anisotropic dielectric response through amorphous laminate structures Physica Status Solidi (a) Applications and Materials Science. 209: 777-784. DOI: 10.1002/Pssa.201127616 |
0.761 |
|
| 2012 |
Wager JF, Hoshino K, Sundholm ES, Presley RE, Ravichandran R, Knutson CC, Keszler DA, Hoffman RL, Mourey DA, Robertson J. A framework for assessing amorphous oxide semiconductor thin-film transistor passivation Journal of the Society For Information Display. 20: 589-595. DOI: 10.1002/Jsid.120 |
0.787 |
|
| 2011 |
Cowell EW, Alimardani N, Knutson CC, Conley JF, Keszler DA, Gibbons BJ, Wager JF. Advancing MIM electronics: amorphous metal electrodes. Advanced Materials (Deerfield Beach, Fla.). 23: 74-8. PMID 20976677 DOI: 10.1002/Adma.201002678 |
0.746 |
|
| 2011 |
Waggoner T, Triska J, Hoshino K, Wager JF, Conley JF. Zirconium oxide-aluminum oxide nanolaminate gate dielectrics for amorphous oxide semiconductor thin-film transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3609254 |
0.643 |
|
| 2011 |
Wager JF, Robertson J. Metal-induced gap states modeling of metal-Ge contacts with and without a silicon nitride ultrathin interfacial layer Journal of Applied Physics. 109. DOI: 10.1063/1.3581159 |
0.371 |
|
| 2011 |
Jiang K, Anderson JT, Hoshino K, Li D, Wager JF, Keszler DA. Low-energy path to dense HfO2 thin films with aqueous precursor Chemistry of Materials. 23: 945-952. DOI: 10.1021/Cm102082J |
0.592 |
|
| 2011 |
Yu L, Lany S, Kykyneshi R, Jieratum V, Ravichandran R, Pelatt B, Altschul E, Platt HAS, Wager JF, Keszler DA, Zunger A. Iron chalcogenide photovoltaic absorbers Advanced Energy Materials. 1: 748-753. DOI: 10.1002/Aenm.201100351 |
0.356 |
|
| 2010 |
Wager JF. Transfer-curve assessment of oxide thin-film transistors Journal of the Society For Information Display. 18: 749-752. DOI: 10.1889/Jsid18.10.749 |
0.442 |
|
| 2010 |
Triska J, Conley JF, Presley R, Wager JF. Bias stress stability of zinc-tin-oxide thin-film transistors with Al 2O3 gate dielectrics Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28. DOI: 10.1116/1.3455494 |
0.492 |
|
| 2010 |
Hoshino K, Wager JF. Operating temperature trends in amorphous in-Ga-Zn-O thin-film transistors Ieee Electron Device Letters. 31: 818-820. DOI: 10.1109/Led.2010.2049980 |
0.578 |
|
| 2010 |
McFarlane BR, Kurahashi P, Heineck DP, Presley RE, Sundholm E, Wager JF. AC/DC rectification with indium gallium oxide thin-film transistors Ieee Electron Device Letters. 31: 314-316. DOI: 10.1109/Led.2010.2042424 |
0.789 |
|
| 2010 |
Alimardani N, Conley JF, Cowell EW, Wager JF, Chin M, Kilpatrick S, Dubey M. Stability and bias stressing of metal/insulator/metal diodes Ieee International Integrated Reliability Workshop Final Report. 80-84. DOI: 10.1109/IIRW.2010.5706491 |
0.768 |
|
| 2010 |
Cowell EW, Knutson CC, Wager JF, Keszler DA. Amorphous metal/oxide nanolaminate Acs Applied Materials and Interfaces. 2: 1811-1813. DOI: 10.1021/Am100283M |
0.791 |
|
| 2009 |
Hoshino K, Hong D, Chiang HQ, Wager JF. Constant-voltage-bias stress testing of a-IGZO thin-film transistors Ieee Transactions On Electron Devices. 56: 1365-1370. DOI: 10.1109/Ted.2009.2021339 |
0.629 |
|
| 2009 |
Heineck DP, McFarlane BR, Wager JF. Zinc tin oxide thin-film-transistor enhancement/depletion inverter Ieee Electron Device Letters. 30: 514-516. DOI: 10.1109/Led.2009.2017496 |
0.459 |
|
| 2009 |
Triska J, Conley JF, Presley R, Wager JF. Bias stability of zinc-tin-oxide thin film transistors with Al 2O3 gate dielectrics Ieee International Integrated Reliability Workshop Final Report. 86-89. DOI: 10.1109/IRWS.2009.5383025 |
0.371 |
|
| 2009 |
Erslev PT, Sundholm ES, Presley RE, Hong D, Wager JF, Cohen JD. Mapping out the distribution of electronic states in the mobility gap of amorphous zinc tin oxide Applied Physics Letters. 95. DOI: 10.1063/1.3262962 |
0.765 |
|
| 2009 |
Spies JA, Schafer R, Wager JF, Hersh P, Platt HAS, Keszler DA, Schneider G, Kykyneshi R, Tate J, Liu X, Compaan AD, Shafarman WN. pin double-heterojunction thin-film solar cell p-layer assessment Solar Energy Materials and Solar Cells. 93: 1296-1308. DOI: 10.1016/J.Solmat.2009.01.024 |
0.421 |
|
| 2008 |
Meyers ST, Anderson JT, Hung CM, Thompson J, Wager JF, Keszler DA. Aqueous inorganic inks for low-temperature fabrication of ZnO TFTs. Journal of the American Chemical Society. 130: 17603-9. PMID 19053193 DOI: 10.1021/Ja808243K |
0.442 |
|
| 2008 |
Hong D, Yerubandi G, Chiang HQ, Spiegelberg MC, Wager JF. Electrical modeling of thin-film transistors Critical Reviews in Solid State and Materials Sciences. 33: 101-132. DOI: 10.1080/10408430701384808 |
0.375 |
|
| 2008 |
Fortunato EMC, Hosono H, Granqvist CG, Wager JF. Advances in transparent electronics: From materials to devices I Thin Solid Films. 516: 1313-1313. DOI: 10.1016/J.Tsf.2007.09.040 |
0.343 |
|
| 2008 |
Wager JF. Transparent electronics: Schottky barrier and heterojunction considerations Thin Solid Films. 516: 1755-1764. DOI: 10.1016/J.Tsf.2007.06.164 |
0.454 |
|
| 2008 |
Chiang HQ, McFarlane BR, Hong D, Presley RE, Wager JF. Processing effects on the stability of amorphous indium gallium zinc oxide thin-film transistors Journal of Non-Crystalline Solids. 354: 2826-2830. DOI: 10.1016/J.Jnoncrysol.2007.10.105 |
0.433 |
|
| 2008 |
Erslev PT, Chiang HQ, Hong D, Wager JF, Cohen JD. Electronic properties of amorphous zinc tin oxide films by junction capacitance methods Journal of Non-Crystalline Solids. 354: 2801-2804. DOI: 10.1016/J.Jnoncrysol.2007.09.062 |
0.476 |
|
| 2007 |
Grover MS, Hersh PA, Chiang HQ, Kettenring ES, Wager JF, Keszler DA. Thin-film transistors with transparent amorphous zinc indium tin oxide channel layer Journal of Physics D: Applied Physics. 40: 1335-1338. DOI: 10.1088/0022-3727/40/5/004 |
0.473 |
|
| 2007 |
Meyers ST, Anderson JT, Hong D, Hung CM, Wager JF, Keszler DA. Solution-processed aluminum oxide phosphate thin-film dielectrics Chemistry of Materials. 19: 4023-4029. DOI: 10.1021/Cm0702619 |
0.467 |
|
| 2007 |
Anderson JT, Munsee CL, Hung CM, Phung TM, Herman GS, Johnson DC, Wager JF, Keszler DA. Solution-processed HafSOx and ZircSOx inorganic thin-film dielectrics and nanolaminates Advanced Functional Materials. 17: 2117-2124. DOI: 10.1002/Adfm.200601135 |
0.452 |
|
| 2006 |
Chiang HQ, Hong D, Hung CM, Presley RE, Wager JF, Park CH, Keszler DA, Herman GS. Thin-film transistors with amorphous indium gallium oxide channel layers Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 2702-2705. DOI: 10.1116/1.2366569 |
0.458 |
|
| 2006 |
Hong D, Chiang HQ, Wager JF. Zinc tin oxide thin-film transistors via reactive sputtering using a metal target Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24. DOI: 10.1116/1.2345206 |
0.464 |
|
| 2006 |
Hong D, Chiang HQ, Presley RE, Dehuff NL, Bender JP, Park CH, Wager JF, Keszler DA. Transparent thin-film transistor exploratory development via sequential layer deposition and thermal annealing Thin Solid Films. 515: 2717-2721. DOI: 10.1016/J.Tsf.2006.03.050 |
0.76 |
|
| 2006 |
Presley RE, Hong D, Chiang HQ, Hung CM, Hoffman RL, Wager JF. Transparent ring oscillator based on indium gallium oxide thin-film transistors Solid-State Electronics. 50: 500-503. DOI: 10.1016/J.Sse.2006.02.004 |
0.408 |
|
| 2006 |
Anderson JT, Meyers ST, Chiang HQ, Hong D, Presley RE, Wager JF, Keszler DA. Solution-processed oxide films, devices, and integrated circuits Materials Research Society Symposium Proceedings. 988: 218-225. |
0.302 |
|
| 2005 |
Hong D, Wager JF. Passivation of zinc-tin-oxide thin-film transistors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23. DOI: 10.1116/1.2127954 |
0.479 |
|
| 2005 |
Munasinghe C, Heikenfeld J, Dorey R, Whatmore R, Bender JP, Wager JF, Steckl AJ. High brightness ZnS and GaN electroluminescent devices using PZT thick dielectric layers Ieee Transactions On Electron Devices. 52: 194-203. DOI: 10.1109/Ted.2004.842542 |
0.744 |
|
| 2005 |
Dehuff NL, Kettenring ES, Hong D, Chiang HQ, Wager JF, Hoffman RL, Park CH, Keszler DA. Transparent thin-film transistors with zinc indium oxide channel layer Journal of Applied Physics. 97. DOI: 10.1063/1.1862767 |
0.467 |
|
| 2005 |
Chiang HQ, Wager JF, Hoffman RL, Jeong J, Keszler DA. High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer Applied Physics Letters. 86: 013503-1-013503-3. DOI: 10.1063/1.1843286 |
0.519 |
|
| 2005 |
Chang YJ, Munsee CL, Herman GS, Wager JF, Mugdur P, Lee DH, Chang CH. Growth, characterization and application of CdS thin films deposited by chemical bath deposition Surface and Interface Analysis. 37: 398-405. DOI: 10.1002/Sia.2012 |
0.432 |
|
| 2005 |
Anderson J, Meyers S, Keszler DA, Munsee C, Olson J, Wager JF, Phung T, Johnson DC, Herman GS. Solution-based, low-temperature deposition of oxide thin films for electronics Digital Fabrication 2005 - Final Program and Proceedings. 179. |
0.303 |
|
| 2004 |
Presley RE, Munsee CL, Park CH, Hong D, Wager JF, Keszler DA. Tin oxide transparent thin-film transistors Journal of Physics D: Applied Physics. 37: 2810-2813. DOI: 10.1088/0022-3727/37/20/006 |
0.456 |
|
| 2003 |
Hong D, Dehuff NL, Presley RE, Munsee CL, Bender JP, Park CH, Wager JF, Keszler DA. Transparent transistor development Materials Research Society Symposium - Proceedings. 796: 99-104. DOI: 10.1557/Proc-796-V1.2 |
0.695 |
|
| 2003 |
Wager JF, Valencia MM, Bender JP, Norris BJ, Chiang HQ, Hong D, Norris LN, Harman TV, Park S, Andersen J, Park CH, Keszler DA, Tate J, Yanagi H, Price M, et al. Transparent electronics and prospects for transparent displays Proceedings of Spie - the International Society For Optical Engineering. 5080: 330-339. DOI: 10.1117/12.500876 |
0.752 |
|
| 2003 |
Norris BJ, Anderson J, Wager JF, Keszler DA. Spin-coated zinc oxide transparent transistors Journal of Physics D: Applied Physics. 36: L105-L107. DOI: 10.1088/0022-3727/36/20/L02 |
0.672 |
|
| 2003 |
Hoffman RL, Norris BJ, Wager JF. ZnO-based transparent thin-film transistors Applied Physics Letters. 82: 733-735. DOI: 10.1063/1.1542677 |
0.713 |
|
| 2003 |
Hoffman RL, Wager JF. Energy band alignment of injector/insulator heterojunctions Thin Solid Films. 436: 286-291. DOI: 10.1016/S0040-6090(03)00583-2 |
0.407 |
|
| 2002 |
Park S, Clark BL, Keszler DA, Bender JP, Wager JF, Reynolds TA, Herman GS. Low-temperature thin-film deposition and crystallization. Science (New York, N.Y.). 297: 65. PMID 12098690 DOI: 10.1126/Science.1072009 |
0.738 |
|
| 2002 |
Cleary BA, Keir PD, Hitt JC, Plant TK, Wager JF, Aitchison B, Tuenge RT, Sun SS. Subthreshold voltage-induced transferred charge measurements of evaporated ZnS:Mn alternating-current thin-film electroluminescent devices Journal of the Society For Information Display. 10: 271-281. DOI: 10.1889/1.1827879 |
0.441 |
|
| 2002 |
Park S, Keszler DA, Valencia MM, Hoffman RL, Bender JP, Wager JF. Transparent p-type conducting BaCu2S2 films Applied Physics Letters. 80: 4393-4394. DOI: 10.1063/1.1485133 |
0.72 |
|
| 2002 |
Tate J, Jayaraj MK, Draeseke AD, Ulbrich T, Sleight AW, Vanaja KA, Nagarajan R, Wager JF, Hoffman RL. p-Type oxides for use in transparent diodes Thin Solid Films. 411: 119-124. DOI: 10.1016/S0040-6090(02)00199-2 |
0.438 |
|
| 2002 |
Bender JP, Wager JF, Kissick J, Clark BL, Keszler DA. Zn2GeO4:Mn alternating-current thin-film electroluminescent devices Journal of Luminescence. 99: 311-324. DOI: 10.1016/S0022-2313(02)00349-6 |
0.746 |
|
| 2002 |
Wager JF, Hitt JC, Baukol BA, Bender JP, Keszler DA. Luminescent impurity doping trends in alternating-current thin-film electroluminescent phosphors Journal of Luminescence. 97: 68-81. DOI: 10.1016/S0022-2313(01)00429-X |
0.772 |
|
| 2001 |
Bondar V, Popovich S, Felter T, Wager J. Low-Temperature Technology and Physical Processes in Green Thin-Film Phosphor Zn2GeO4-Mn Mrs Proceedings. 667. DOI: 10.1557/Proc-667-G7.6 |
0.358 |
|
| 2001 |
Jayaraj MK, Draeseke AD, Tate J, Hoffman RL, Wager JF. Transparent p-n Heterojunction Thin Film Diodes Mrs Proceedings. 666. DOI: 10.1557/Proc-666-F4.1 |
0.405 |
|
| 2001 |
Norris BJ, Wager JF. Transient brightness, current, and voltage characterization of organic light emitting devices Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 546-550. DOI: 10.1116/1.1358858 |
0.672 |
|
| 2001 |
Hoffman RL, Wager JF, Jayaraj MK, Tate J. Electrical characterization of transparent p-i-n heterojunction diodes Journal of Applied Physics. 90: 5763-5767. DOI: 10.1063/1.1413710 |
0.44 |
|
| 2001 |
Hitt JC, Wager JF. Insulator issues in alternating-current thin-film electroluminescent devices Journal of Applied Physics. 90: 2711-2717. DOI: 10.1063/1.1388598 |
0.443 |
|
| 2001 |
Baukol BA, Hitt JC, Wager JF, Sun SS. Electroluminescence thermal quenching in alternating-current thin-film electroluminescent devices Journal of Applied Physics. 90: 2185-2190. DOI: 10.1063/1.1385570 |
0.779 |
|
| 2000 |
Hitt JC, Bender JP, Wager JF. Thin-film electroluminescent device physics modeling Critical Reviews in Solid State and Materials Sciences. 25: 29-85. DOI: 10.1080/10408430091149178 |
0.717 |
|
| 2000 |
Baukol BA, Hitt JC, Keir PD, Wager JF. Electroluminescence thermal quenching in SrS:Cu thin-film electroluminescent devices Applied Physics Letters. 76: 185-187. DOI: 10.1063/1.125697 |
0.789 |
|
| 2000 |
Li D, Clark BL, Keszler DA, Keir P, Wager JF. Color control in sulfide phosphors: Turning up the light for electroluminescent displays Chemistry of Materials. 12: 268-270. DOI: 10.1021/Cm9904234 |
0.423 |
|
| 1999 |
Keir PD, Maddix C, Baukol BA, Wager JF, Clark BL, Keszler DA. Lanthanide doping in ZnS and SrS thin-film electroluminescent devices Journal of Applied Physics. 86: 6810-6815. DOI: 10.1063/1.371756 |
0.786 |
|
| 1999 |
Keir PD, Wager JF, Clark BL, Li D, Keszler DA. Alkali metal coactivators in SrS: Cu,F thin-film electroluminescent devices Applied Physics Letters. 75: 1398-1400. DOI: 10.1063/1.124706 |
0.418 |
|
| 1998 |
Dür M, Goodnick SM, Pennathur SS, Wager JF, Reigrotzki M, Redmer R. High-field transport and electroluminescence in ZnS phosphor layers Journal of Applied Physics. 83: 3176-3185. DOI: 10.1063/1.367085 |
0.397 |
|
| 1998 |
Hitt JC, Keir PD, Wager JF, Sun SS. Static space charge in evaporated ZnS:Mn alternating-current thin-film electroluminescent devices Journal of Applied Physics. 83: 1141-1145. DOI: 10.1063/1.366806 |
0.395 |
|
| 1997 |
Wager JF, Keir PD. Electrical characterization of thin-film electroluminescent devices Annual Review of Materials Science. 27: 223-248. DOI: 10.1146/Annurev.Matsci.27.1.223 |
0.426 |
|
| 1997 |
Myers R, Wager JF. Transferred charge analysis of evaporated ZnS:Mn alternating-current thin-film electroluminescent devices Journal of Applied Physics. 81: 506-510. DOI: 10.1063/1.364127 |
0.413 |
|
| 1996 |
Samuels JA, Smith DC, Siebein KN, Salazar K, Tuenge RT, Schaus CF, King CN, Le H, Hitt J, Thuemler RL, Wager JF. MOCVD of SrS and SrS:Ce thin films for electroluminescent flat panel displays Materials Research Society Symposium - Proceedings. 415: 15-20. DOI: 10.1557/Proc-415-15 |
0.409 |
|
| 1996 |
Keir PD, Le H, Thuemler RL, Hitt J, Wager JF. Relaxation charge anomalies in the charge-voltage characteristics of alternating-current thin-film electroluminescent devices Applied Physics Letters. 69: 2421-2422. DOI: 10.1063/1.117657 |
0.416 |
|
| 1996 |
Shih S, Keir PD, Hitt J, Wager JF. Offset of the electrical characteristics of alternating-current thin-film electroluminescent devices Applied Physics Letters. 69: 1921-1923. DOI: 10.1063/1.117622 |
0.448 |
|
| 1996 |
Lite K, Thuemler RL, Plant TK, Wager JF, Morton DC, Sun SS, Mauch RH. Vacuum ultraviolet reflectivity measurements of thin-film electroluminescent phosphors Applied Physics Letters. 69: 3525-3527. DOI: 10.1063/1.117233 |
0.365 |
|
| 1995 |
Streicher K, Plant TK, Wager JF. Hot-electron impact excitation of ZnS:Tb alternating-current thin-film electroluminescent devices Journal of Applied Physics. 78: 2101-2104. DOI: 10.1063/1.360188 |
0.455 |
|
| 1995 |
Keir PD, Ang WM, Wager JF. Modeling space charge in alternating-current thin-film electroluminescent devices using a single-sheet charge model Journal of Applied Physics. 78: 4668-4680. DOI: 10.1063/1.359814 |
0.382 |
|
| 1995 |
Shih S, Keir PD, Wager JF, Viljanen J. Space charge generation in ZnS:Mn alternating-current thin-film electroluminescent devices Journal of Applied Physics. 78: 5775-5781. DOI: 10.1063/1.359640 |
0.325 |
|
| 1995 |
Ang WM, Pennathur S, Pham L, Wager JF, Goodnick SM, Douglas AA. Evidence for band-to-band impact ionization in evaporated ZnS:Mn alternating-current thin-film electroluminescent devices Journal of Applied Physics. 77: 2719-2724. DOI: 10.1063/1.358741 |
0.468 |
|
| 1994 |
Abu-Dayah A, Wager JF. Aging studies of atomic layer epitaxy ZnS:Mn alternating-current thin-film electroluminescent devices Journal of Applied Physics. 75: 3593-3598. DOI: 10.1063/1.356070 |
0.465 |
|
| 1994 |
Lim S, Ryu JH, Wager JF, Plant TK. Rugate filters grown by plasma-enhanced chemical vapor deposition Thin Solid Films. 245: 141-145. DOI: 10.1016/0040-6090(94)90889-3 |
0.311 |
|
| 1994 |
Ryu JH, Lim S, Wager JF. Alternating-current thin-film electroluminescent devices with multiple dielectric layers Thin Solid Films. 248: 63-68. DOI: 10.1016/0040-6090(94)90212-7 |
0.454 |
|
| 1993 |
Abu-Dayah A, Wager JF, Kobayashi S. Electrical characterization of atomic layer epitaxy ZnS:Mn alternating-current thin-film electroluminescent devices subject to various waveforms Journal of Applied Physics. 74: 5575-5581. DOI: 10.1063/1.354218 |
0.428 |
|
| 1993 |
Douglas AA, Wager JF, Morton DC, Koh JB, Hogh CP. Evidence for space charge in atomic layer epitaxy ZnS:Mn alternating-current thin-film electroluminescent devices Journal of Applied Physics. 73: 296-299. DOI: 10.1063/1.353903 |
0.473 |
|
| 1993 |
Bhattacharyya K, Goodnick SM, Wager JF. Monte Carlo simulation of electron transport in alternating-current thin-film electroluminescent devices Journal of Applied Physics. 73: 3390-3395. DOI: 10.1063/1.352938 |
0.39 |
|
| 1993 |
Douglas AA, Wager JF, Morton DC, Koh JB, Hogh CP. Hot electron luminescence in ZnS alternating-current thin-film electroluminescent devices Applied Physics Letters. 63: 231-233. DOI: 10.1063/1.110350 |
0.455 |
|
| 1993 |
Abu-Dayah A, Kobayashi S, Wager JF. Internal charge-phosphor field characteristics of alternating-current thin-film electroluminescent devices Applied Physics Letters. 62: 744-746. DOI: 10.1063/1.108860 |
0.4 |
|
| 1993 |
Lim S, Ryu JH, Wager JF, Casas LM. Inhomogeneous dielectrics grown by plasma-enhanced chemical vapor deposition Thin Solid Films. 236: 64-66. DOI: 10.1016/0040-6090(93)90643-4 |
0.343 |
|
| 1992 |
Davidson JD, Wager JF, Khormaei RI, King CN, Williams R. Electrical Characterization and Modeling of Alternating-Current Thin-Film Electroluminescent Devices Ieee Transactions On Electron Devices. 39: 1122-1128. DOI: 10.1016/0141-9382(92)90053-T |
0.42 |
|
| 1990 |
McArthur RC, Davidson JD, Wager JF, Khormaei I, King CN. Capacitance-voltage characteristics of alternating-current thin-film electroluminescent devices Applied Physics Letters. 56: 1889-1891. DOI: 10.1063/1.103078 |
0.318 |
|
| 1990 |
Kim SB, Wager JF, Morton DC. Diamond-like carbon films for electroluminescent applications Surface and Coatings Technology. 43: 99-106. DOI: 10.1016/0257-8972(90)90064-J |
0.366 |
|
| 1990 |
Kim SB, Wager JF, Morton DC. Short-wavelength electroluminescence in diamond-like carbon thin films Thin Solid Films. 189: 45-50. DOI: 10.1016/0040-6090(90)90025-9 |
0.421 |
|
| 1990 |
Davidson JD, Wager JF, Khormaei I, King CN. Aging instabilities of ZnS:Mn AC thin-film electroluminescent devices Acta Polytechnica Scandinavica, Applied Physics Series. 185-187. |
0.314 |
|
| 1990 |
McArthur RC, Davidson JD, Khormaei I, Wager JF, King CN. Characterization of ZnS:Mn AC thin-film electroluminescent devices by capacitance-voltage analysis Acta Polytechnica Scandinavica, Applied Physics Series. 181-183. |
0.316 |
|
| 1989 |
Nelson AJ, Benson DK, Tracy CE, Kazmerski LL, Wager JF. Electron energy‐loss spectroscopy analysis of low‐temperature plasma‐enhanced chemically vapor deposited a‐C:H films Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 7: 1350-1352. DOI: 10.1116/1.576284 |
0.352 |
|
| 1989 |
Dobson TW, Wager JF. Enthalpy of formation of antisite defects and antistructure pairs in III-V compound semiconductors Journal of Applied Physics. 66: 1997-2001. DOI: 10.1063/1.344337 |
0.321 |
|
| 1988 |
Juang MT, Wager JF, Van Vechten JA. Phosphorous Vacancy Nearest Neighbor Hopping Induced Instabilities in InP Capacitors II. Computer Simulation Journal of the Electrochemical Society. 135: 2023-2027. DOI: 10.1149/1.2096200 |
0.389 |
|
| 1988 |
Kim SB, Wager JF. Electroluminescence in diamond-like carbon films Applied Physics Letters. 53: 1880-1881. DOI: 10.1063/1.100381 |
0.432 |
|
| 1987 |
Wager JF, Prasad SJ, Owen SJT. InP MISFET Technology Interface Considerations Journal of the Electrochemical Society. 134: 160-165. DOI: 10.1149/1.2100399 |
0.313 |
|
| 1987 |
Wager JF, Mccamant AJ. Gaas mesfet interface considerations Ieee Transactions On Electron Devices. 34: 1001-1007. DOI: 10.1109/T-Ed.1987.23036 |
0.358 |
|
| 1985 |
Wager JF, Rhiger DR. Surface characterization of Hg0.7Cd0.3Te native oxides Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 3: 212-217. DOI: 10.1116/1.573204 |
0.38 |
|
| 1985 |
Liliental Z, Krivanek OL, Wager JF, Goodnick SM. Structure of the InP/SiO2 interface Applied Physics Letters. 46: 889-891. DOI: 10.1063/1.95877 |
0.379 |
|
| 1985 |
Van Vechten JA, Wager JF. Consequences of anion vacancy nearest-neighbor hopping in III-V compound semiconductors: Drift in InP metal-insulator-semiconductor field-effect transistors Journal of Applied Physics. 57: 1956-1960. DOI: 10.1063/1.334431 |
0.383 |
|
| 1984 |
Wager JF, Clark MD, Jullens RA. SiO//2/InP INTERFACES WITH REDUCED INTERFACE STATE DENSITY Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2: 584-587. DOI: 10.1116/1.582843 |
0.356 |
|
| 1984 |
Geib KM, Goodnick SM, Lin DY, Gann RG, Wilmsen CW, Wager JF. INFLUENCE OF INTERFACIAL STRUCTURE ON THE ELECTRONIC PROPERTIES OF SiO//2/InP MISFET's Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2: 516-521. DOI: 10.1116/1.582810 |
0.405 |
|
| 1983 |
Wager JF, Geib KM, Wilmsen CW, Kazmerski LL. NATIVE OXIDE FORMATION AND ELECTRICAL INSTABILITIES AT THE INSULATOR/InP INTERFACE Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1: 778-781. DOI: 10.1116/1.582691 |
0.414 |
|
| 1983 |
Ireland PJ, Stanchina W, Wager JF, Jamjoum O, Kazmerski LL, Ahrenkiel RK, Russell PE. Surface and interface analysis of GaAs-oxyfluorides Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 1: 653-656. DOI: 10.1116/1.572202 |
0.413 |
|
| 1983 |
Kazmerski LL, Jamjoum O, Wager JF, Ireland PJ, Bachmann KJ. Summary Abstract: Oxidation of CuInSe2 Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 1: 668-669. DOI: 10.1116/1.571973 |
0.307 |
|
| 1983 |
Wager JF, Wilmsen CW, Kazmerski LL. Estimation of the band gap of InPO4 Applied Physics Letters. 42: 589-591. DOI: 10.1063/1.94003 |
0.314 |
|
| 1983 |
Wilmsen CW, Wager JF, Geib KM, Hwang T, Fathipour M. Traps at the deposited insulator-InP interface- a discussion of a possible cause Thin Solid Films. 103: 47-52. DOI: 10.1016/0040-6090(83)90423-6 |
0.405 |
|
| 1982 |
Wager JF, Wilmsen CW. Plasma-enhanced chemical vapor deposited SiO2/InP interface Journal of Applied Physics. 53: 5789-5797. DOI: 10.1063/1.331416 |
0.435 |
|
| 1982 |
Wager JF, Makky WH, Wilmsen CW, Meiners LG. Oxidation of InP in a plasma-enhanced chemical vapor deposition reactor Thin Solid Films. 95: 343-350. DOI: 10.1016/0040-6090(82)90040-2 |
0.359 |
|
| 1981 |
Wager JF, Ellsworth DL, Goodnick SM, Wilmsen CW. COMPOSITION AND THERMAL STABILITY OF THIN NATIVE OXIDES ON InP Journal of Vacuum Science &Amp; Technology. 19: 513-518. DOI: 10.1116/1.571049 |
0.331 |
|
| 1980 |
Wager JF, Wilmsen CW. SiO//2/InP INTERFACE FORMATION: THERMODYNAMIC CONSIDERATIONS Journal of Vacuum Science &Amp; Technology. 17: 800-803. DOI: 10.1116/1.570563 |
0.336 |
|
| 1980 |
Goodnick SM, Wager JF, Wilmsen CW. Thermal degradation of indium-tin-oxide/p-silicon solar cells Journal of Applied Physics. 51: 527-531. DOI: 10.1063/1.327356 |
0.334 |
|
| 1980 |
Wager JF, Wilmsen CW. Thermal oxidation of InP Journal of Applied Physics. 51: 812-814. DOI: 10.1063/1.327302 |
0.328 |
|
| 1979 |
Birey H, Pak SJ, Sites JR, Wager JF. ION-BEAM-SPUTTERED AlO//xN//y ENCAPSULATING FILMS Journal of Vacuum Science & Technology. 16: 2086-2089. DOI: 10.1116/1.570344 |
0.384 |
|
| 1979 |
Wager JF, Wilmsen CW. Detection of SiO2 at the indium tin oxide/Si solar cell interface Journal of Applied Physics. 50: 4172-4177. DOI: 10.1063/1.326498 |
0.321 |
|
| 1979 |
Shewchun J, Dubow J, Wilmsen CW, Singh R, Burk D, Wager JF. The operation of the semiconductor-insulator-semiconductor solar cell: Experiment Journal of Applied Physics. 50: 2832-2839. DOI: 10.1063/1.326196 |
0.415 |
|
| 1979 |
Wilmsen CW, Kee RW, Wager JF, Stannard J, Messick L. Interface formation of deposited insulator layers on GaAs and InP Thin Solid Films. 64: 49-55. DOI: 10.1016/0040-6090(79)90542-X |
0.4 |
|
| 1978 |
DuBow J, Cheek G, Genis AP, Wilmsen C, Wager JF, Shewchun J. INFLUENCE OF THE INTERFACE UPON THE PROPERTIES OF ITO/SILICON SIS SOLAR CELLS Conference Record of the Ieee Photovoltaic Specialists Conference. 767-773. |
0.319 |
|
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