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Meera Chandrasekhar - Publications

Affiliations: 
University of Missouri - Columbia, Columbia, MO, United States 
Area:
Condensed Matter Physics, Optics Physics, Molecular Physics
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Year Citation  Score
2013 Paudel K, Moghe D, Chandrasekhar M, Yu P, Ramasesha S, Scherf U, Guha S. Pressure dependence of singlet and triplet excitons in amorphous polymer semiconductors Epl. 104. DOI: 10.1209/0295-5075/104/27008  0.737
2011 Paudel K, Chandrasekhar M, Scherf U, Preis E, Guha S. High-pressure optical studies of donor-acceptor polymer heterojunctions Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.205208  0.727
2011 Guha S, Chandrasekhar M, Scherf U, Knaapila M. Tuning structural and optical properties of blue-emitting polymeric semiconductors Physica Status Solidi (B) Basic Research. 248: 1083-1090. DOI: 10.1002/Pssb.201000779  0.465
2010 Paudel K, Knoll H, Chandrasekhar M, Guha S. Tuning intermolecular interactions in dioctyl-substituted polyfluorene via hydrostatic pressure. The Journal of Physical Chemistry. A. 114: 4680-8. PMID 20235499 DOI: 10.1021/Jp911778R  0.741
2009 Chandrasekhar M, Cerdeira F, Lemos V. Preface Physica Status Solidi (B) Basic Research. 246: 469-472. DOI: 10.1002/Pssb.200880550  0.315
2009 Paudel K, Arif M, Chandrasekhar M, Guha S. Optical properties of di-octyl substituted polyfluorene under hydrostatic pressure Physica Status Solidi (B) Basic Research. 246: 563-569. DOI: 10.1002/Pssb.200880544  0.716
2008 Boley MS, Chandrasekhar M, Chandrasekhar HR, Wu Y, Boolchand P. Hydrostatic pressure studies of the Raman‐active phonon modes in the bulk high‐temperature superconductor YBa2Cu4O8 High‐Pressure Science and Technology. 309: 681-684. DOI: 10.1063/1.46424  0.329
2008 Boley MS, Thomas RJ, Chandrasekhar M, Chandrasekhar HR, Ram‐Mohan LR, Samarth N, Luo H, Furdyna JK. Hydrostatic pressure studies of optical transitions in the photoluminescence spectra of Zn1−xCdxSe thick epilayers and Zn1−xCdxSe/ZnSe strained layer multiple quantum wells High‐Pressure Science and Technology. 309: 203-206. DOI: 10.1063/1.46310  0.424
2007 Kattumuri V, Katti K, Bhaskaran S, Boote EJ, Casteel SW, Fent GM, Robertson DJ, Chandrasekhar M, Kannan R, Katti KV. Gum arabic as a phytochemical construct for the stabilization of gold nanoparticles: in vivo pharmacokinetics and X-ray-contrast-imaging studies. Small (Weinheim An Der Bergstrasse, Germany). 3: 333-41. PMID 17262759 DOI: 10.1002/Smll.200600427  0.684
2006 Kattumuri V, Chandrasekhar M, Guha S, Raghuraman K, Katti KV, Ghosh K, Patel RJ. Agarose-stabilized gold nanoparticles for surface-enhanced Raman spectroscopic detection of DNA nucleosides Applied Physics Letters. 88. DOI: 10.1063/1.2192573  0.685
2005 Wang F, Mamedov S, Boolchand P, Goodman B, Chandrasekhar M. Pressure Raman effects and internal stress in network glasses Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/Physrevb.71.174201  0.345
2004 Guha S, Chandrasekhar M. Photophysics of organic emissive semiconductors under hydrostatic pressure Physica Status Solidi (B) Basic Research. 241: 3318-3327. DOI: 10.1002/Pssb.200405254  0.4
2003 Martin CM, Guha S, Chandrasekhar M, Chandrasekhar HR, Guentner R, Freitas PSd, Scherf U. Hydrostatic pressure dependence of the luminescence and Raman frequencies in polyfluorene Physical Review B. 68: 115203. DOI: 10.1103/Physrevb.68.115203  0.47
2003 Guha S, Rice JD, Yau YT, Martin CM, Chandrasekhar M, Chandrasekhar HR, Guentner R, Freitas PSd, Scherf U. Temperature dependent photoluminescence of organic semiconductors with varying backbone conformation Physical Review B. 67: 125204. DOI: 10.1103/Physrevb.67.125204  0.314
2003 Martin CM, Guha S, Chandrasekhar M, Chandrasekhar HR, Guentner R, Scandiucci De Freitas P, Scherf U. Effect of temperature and pressure on the optical properties of polyfluorene Synthetic Metals. 135: 273-274. DOI: 10.1016/S0379-6779(02)00905-0  0.439
2003 Martin CM, Guha S, Chandrasekhar M, Chandrasekhar HR, Guentner R, De Freitas PS, Scherf U. Hydrostatic pressure dependence of the luminescence and Raman frequencies in polyfluorene Physical Review B - Condensed Matter and Materials Physics. 68: 1152031-1152039.  0.37
2002 Guha S, Rice JD, Martin CM, Graupner W, Chandrasekhar M, Chandrasekhar HR, Scherr U. Optical spectroscopic studies of a soluble fluorene-based conjugated polymer: A hydrostatic pressure and temperature study Materials Research Society Symposium - Proceedings. 708: 299-304. DOI: 10.1557/Proc-708-Bb10.7  0.462
2002 Loi MA, Martin C, Chandrasekhar HR, Chandrasekhar M, Graupner W, Garnier F, Mura A, Bongiovanni G. Primary optical excitations and excited-state interaction energies in sexithiophene Physical Review B - Condensed Matter and Materials Physics. 66: 1131021-1131024. DOI: 10.1103/Physrevb.66.113102  0.356
2001 Loi MA, Mura A, Bongiovanni G, Cai Q, Martin C, Chandrasekhar HR, Chandrasekhar M, Graupner W, Garnier F. Ultrafast formation of nonemissive species via intermolecular interaction in single crystals of conjugated molecules. Physical Review Letters. 86: 732-5. PMID 11177924 DOI: 10.1103/Physrevlett.86.732  0.564
2001 Guha S, Graupner W, Resel R, Chandrasekhar M, Chandrasekhar HR, Glaser R, Leising G. Tuning intermolecular interactions: A study of the structural and vibrational properties of p-hexaphenyl under pressure Journal of Physical Chemistry A. 105: 6203-6211. DOI: 10.1021/Jp0045540  0.377
2001 Heimel G, Cai Q, Martin C, Puschnig P, Guha S, Graupner W, Ambrosch-Draxl C, Chandrasekhar M, Leising G. On the structure of oligophenylenes Synthetic Metals. 119: 371-372. DOI: 10.1016/S0379-6779(00)01394-1  0.393
2001 Chandrasekhar M, Yang SC, Guha S, Cai Q, Martin CM, Chandrasekhar HR, Graupner W, Leising G. Optical transitions in para-phenylenes under hydrostatic pressure Synthetic Metals. 119: 657-658. DOI: 10.1016/S0379-6779(00)01005-5  0.409
2001 Loi MA, Mura A, Bongiovanni G, Cai Q, Martin C, Chandrasekhar HR, Chandrasekhar M, Graupner W, Garnier F. Pressure-induced quenching of the photoluminescence in sexithiophene single crystals observed by femtosecond spectroscopy Synthetic Metals. 119: 645-646. DOI: 10.1016/S0379-6779(00)00948-6  0.414
2001 Heimel G, Puschnig P, Cai Q, Martin C, Zojer E, Graupner W, Chandrasekhar M, Chandrasekhar HR, Ambrosch-Draxl C, Leising G. High pressure Raman studies on the structural conformation of oligophenyls Synthetic Metals. 116: 163-166. DOI: 10.1016/S0379-6779(00)00478-1  0.413
2001 Loi MA, Cai Q, Chandrasekhar HR, Chandrasekhar M, Graupner W, Bongiovanni G, Mura A, Botta C, Garnier E F. High pressure study of the intramolecular vibrational modes in sexithiophene single crystals Synthetic Metals. 116: 321-326. DOI: 10.1016/S0379-6779(00)00430-6  0.387
2001 Loi MA, Bongiovanni G, Mura A, Cai Q, Martin C, Chandrasekhar HR, Chandrasekhar M, Graupner W, Garnier F. High pressure effects on the photoluminescence intensity of sexithiophene single crystals Synthetic Metals. 116: 311-315. DOI: 10.1016/S0379-6779(00)00428-8  0.392
2001 Chandrasekhar M, Guha S, Graupner W. Squeezing Organic Conjugated Molecules— What Does One Learn?** Advanced Materials. 13: 613-618. DOI: 10.1002/1521-4095(200104)13:8<613::Aid-Adma613>3.0.Co;2-J  0.44
2001 Chandrasekhar M, Guha S, Graupner W. Squeezing organic conjugated molecules - What does one learn? Advanced Materials. 13: 613-618. DOI: 10.1002/1521-4095(200104)13:8<613::AID-ADMA613>3.0.CO;2-J  0.333
2000 Yang SC, Graupner W, Guha S, Puschnig P, Martin C, Chandrasekhar HR, Chandrasekhar M, Leising G, Ambrosch-Draxl C, Scherf U. Geometry-dependent electronic properties of highly fluorescent conjugated molecules Physical Review Letters. 85: 2388-91. PMID 10978017 DOI: 10.1103/Physrevlett.85.2388  0.434
1999 Guha S, Graupner W, Resel R, Chandrasekhar M, Chandrasekhar HR, Glaser R, Leising G. High pressure studies on the planarity of para-hexaphenyl Synthetic Metals. 101: 180-181. DOI: 10.1016/S0379-6779(98)00837-6  0.362
1999 Guha S, Graupner W, Yang S, Chandrasekhar M, Chandrasekhar HR, Leising G. Optical properties of poly(para-phenylenes) under high pressure Physica Status Solidi (B) Basic Research. 211: 177-188. DOI: 10.1002/(Sici)1521-3951(199901)211:1<177::Aid-Pssb177>3.0.Co;2-K  0.436
1998 Payne DJ, Guha S, Cai Q, Chandrasekhar M, Chandrasekhar HR, Jayaram B, Ulanday J. Raman Phonons under Hydrostatic Pressure in YBa2 (Cu1-xNix) 4O8 The Review of High Pressure Science and Technology. 7: 535-537. DOI: 10.4131/Jshpreview.7.535  0.32
1998 Guha S, Cai Q, Chandrasekhar M, Chandrasekhar HR, Kim H, Alvarenga AD, Vogelgesang R, Ramdas AK, Melloch MR. Photoluminescence of short-period GaAs/AlAs superlattices: A hydrostatic pressure and temperature study Physical Review B. 58: 7222-7229. DOI: 10.1103/Physrevb.58.7222  0.408
1997 Guha S, Cai Q, Chandrasekhar M, Chandrasekhar HR, Kim H, Alvarenga AD, Vogelgesang R, Ramdas AK, Melloch MR. Temperature Dependence of the Intervalley Deformation Potential of GaAs/AlAs Superlattices Under Hydrostatic Pressure Mrs Proceedings. 499. DOI: 10.1557/Proc-499-201  0.395
1997 Graupner W, Guha S, Yang S, Chandrasekhar M, Chandrasekhar HR, Leising G, Scherf U, Muellen K. Electronic properties of poly(para-phenylenes) under high pressure Mrs Proceedings. 488. DOI: 10.1557/Proc-488-873  0.404
1997 Guha S, Graupner W, Resel R, Chandrasekhar M, Chandrasekhar HR, Leising G. Structural properties of hexaphenyl powder under high pressure Materials Research Society Symposium - Proceedings. 488: 867-872. DOI: 10.1557/Proc-488-867  0.427
1995 Thomas RJ, Chandrasekhar HR, Chandrasekhar M, Jones ED, Schneider RP. Polarized photomodulated reflectivity and photoluminescence studies of ordered InGaP2 under pressure Journal of Physics and Chemistry of Solids. 56: 357-362. DOI: 10.1016/0022-3697(94)00207-X  0.426
1995 Baugher EM, Chandrasekhar M, Chandrasekhar HR, Luo H, Furdyna JK, Ram-Mohan LR. A comparative study of ordered alloy and random alloy quantum wells of Zn1 - xCdxSe ZnSe under pressure Journal of Physics and Chemistry of Solids. 56: 323-327. DOI: 10.1016/0022-3697(94)00201-0  0.355
1995 Chandrasekhar HR, Chandrasekhar M, Thomas RJ, Jones ED, Schneider RP. Polarized optical studies of ordered InGaP2 under pressure Superlattices and Microstructures. 18: 131-137. DOI: 10.1006/Spmi.1995.1097  0.441
1994 Thomas RJ, Boley MS, Chandrasekhar HR, Chandrasekhar M, Parks C, Ramdas AK, Han J, Kobayashi M, Gunshor RL. Raman and modulated-reflectivity spectra of a strained pseudomorphic ZnTe epilayer on InAs under pressure. Physical Review. B, Condensed Matter. 49: 2181-2184. PMID 10011031 DOI: 10.1103/Physrevb.49.2181  0.387
1994 Chandrasekhar M, Chandrasekhar HR. Optical studies of strained pseudomorphic semiconductor heterostructures under external pressure Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties. 70: 369-380. DOI: 10.1080/01418639408240213  0.35
1994 Thomas RJ, Boley MS, Chandrasekhar HR, Chandrasekhar M, Parks C, Ramdas AK, Han J, Kobayashi M, Gunshor RL. Raman and photo‐modulated reflectivity studies of ZnTe/InAs semiconductor heterostructure under hydrostatic pressure High‐Pressure Science and Technology. 309: 613-616. DOI: 10.1063/1.46407  0.425
1993 Boley MS, Thomas RJ, Chandrasekhar M, Chandrasekhar HR, Ramdas AK, Kobayashi M, Gunshor RL. Pressure tuning of strain in CdTe/InSb epilayer: A photoluminescence and photomodulated reflectivity study Journal of Applied Physics. 74: 4136-4144. DOI: 10.1063/1.354415  0.429
1992 Thomas RJ, Chandrasekhar HR, Chandrasekhar M, Samarth N, Luo H, Furdyna J. Hydrostatic-pressure studies of confined transitions in cubic Zn1-xCdxSe/ZnSe strained-layer quantum wells Physical Review B. 45: 9505-9508. DOI: 10.1103/PhysRevB.45.9505  0.322
1992 Chandrasekhar M, Chandrasekhar HR. Electronic transitions in semiconductor quantum wells and epilayers under pressure High Pressure Research. 9: 57-82. DOI: 10.1080/08957959208245613  0.354
1991 Rockwell B, Chandrasekhar HR, Chandrasekhar M, Ramdas AK, Kobayashi M, Gunshor RL. Pressure tuning of strains in semiconductor heterostructures: (ZnSe epilayer)/(GaAs epilayer). Physical Review. B, Condensed Matter. 44: 11307-11314. PMID 9999254 DOI: 10.1103/Physrevb.44.11307  0.391
1991 Roach WP, Chandrasekhar M, Chandrasekhar HR, Chambers FA. Electronic transitions in bulk Al0.3Ga0.7As under hydrostatic pressure Physical Review B. 44: 13404-13417. DOI: 10.1103/PhysRevB.44.13404  0.347
1991 Roach WP, Chandrasekhar M, Chandrasekhar HR, Chambers FA. Deep center in Al0.3Ga0.7As Physical Review B. 43: 12126-12129. DOI: 10.1103/Physrevb.43.12126  0.309
1990 Rockwell B, Chandrasekhar HR, Chandrasekhar M, Pollak FH, Shen H, Chang LL, Wang WI, Esaki L. Spectroscopic studies of strained-layer GaSbAlSb superlattices Surface Science. 228: 322-325. DOI: 10.1016/0039-6028(90)90319-4  0.549
1989 Prakash M, Chandrasekhar M, Chandrasekhar H, Miotkowski I, Ramdas A. Photoluminescence Studies of Diluted Magnetic Semiconductors Under Hydrostatic Pressure: Cd1−xMnxTe Mrs Proceedings. 161. DOI: 10.1557/Proc-161-449  0.39
1989 Rockwell B, Chandrasekhar H, Chandrasekhar M, Pollak FH, Shen H, Chang L, Wang W, Esaki L. High Pressure Optical Studies of GaSb-AlSb Multiple Quantum Wells Mrs Proceedings. 160. DOI: 10.1557/Proc-160-751  0.56
1989 Roach WP, Chandrasekhar M, Chandrasekhar HR, Chambers FA, Meese JM. Pressure studies of impurity levels in AlxGa1-xAs Semiconductor Science and Technology. 4: 290-292. DOI: 10.1088/0268-1242/4/4/033  0.404
1988 Kangarlu A, Chandrasekhar HR, Chandrasekhar M, Kapoor YM, Chambers FA, Vojak BA, Meese JM. High-pressure studies of GaAs-AlxGa1-xAs quantum wells at 300 and 80 K using photoreflectance spectroscopy. Physical Review. B, Condensed Matter. 38: 9790-9796. PMID 9945799 DOI: 10.1103/Physrevb.38.9790  0.416
1988 Chandrasekhar M, Chandrasekhar HR, Kangarlu A, Venkateswaran U, Chambers FA, Meese JM. Quantum wells and deep impurity levels under hydrostatic pressure Superlattices and Microstructures. 4: 107-114. DOI: 10.1016/0749-6036(88)90275-3  0.405
1987 Venkateswaran U, Chandrasekhar M, Chandrasekhar HR, Vojak BA, Chambers FA, Meese JM. High pressure study of GaAsAlxGa1-xAs quantum wells at low temperatures Superlattices and Microstructures. 3: 217-223. DOI: 10.1016/0749-6036(87)90061-9  0.435
1986 Venkateswaran U, Chandrasekhar M, Chandrasekhar HR, Vojak BA, Chambers FA, Meese JM. High-pressure studies of GaAs-Ga1-xAlxAs quantum wells of widths 26 to 150 A Physical Review. B, Condensed Matter. 33: 8416-8423. PMID 9938238 DOI: 10.1103/Physrevb.33.8416  0.352
1986 Kangarlu A, Chandrasekhar HR, Chandrasekhar M, Chambers FA, Vojak BA, Meese JM. Photoreflectance spectroscopy of GaAsAlxGa1-xAs quantum wells under hydrostatic pressure Superlattices and Microstructures. 2: 569-573. DOI: 10.1016/0749-6036(86)90117-5  0.42
1985 Zhang B, Chandrasekhar M, Chandrasekhar HR. Pressure-induced shifts of the fluorescence spectrum of rhodamine 6G in solution. Applied Optics. 24: 2779-2782. PMID 18223953 DOI: 10.1364/Ao.24.002779  0.389
1985 Venkateswaran U, Chandrasekhar M, Chandrasekhar HR, Wolfram T, Fischer R, Masselink WT, Morkoç H. Photoluminescence studies of a GaAs-Ga1-xAlxAs superlattice at 8-300 K under hydrostatic pressure (0-70 kbar). Physical Review. B, Condensed Matter. 31: 4106-4109. PMID 9936335 DOI: 10.1103/Physrevb.31.4106  0.37
1985 Venkateswaran U, Chandrasekhar M. Low-temperature studies of the photoluminescence in CdS under hydrostatic pressure. Physical Review B. 31: 1219-1222. PMID 9935893 DOI: 10.1103/Physrevb.31.1219  0.346
1985 Venkateswaran UD, Chandrasekhar M, Chandrasekhar HR. Effects of hydrostatic pressure on the low-temperature photoluminescence spectrum of heavily doped CdS. Physical Review B. 31: 6574-6578. PMID 9935537 DOI: 10.1103/Physrevb.31.6574  0.363
1984 Venkateswaran U, Chandrasekhar M, Chandrasekhar HR. Luminescence and Raman spectra of CdS under hydrostatic pressure Physical Review B. 30: 3316-3319. DOI: 10.1103/Physrevb.30.3316  0.389
1981 Chandrasekhar M, Chandrasekhar HR, Meese JM. Raman scattering from amorphous zones in neutron irradiated silicon Solid State Communications. 38: 1113-1116. DOI: 10.1016/0038-1098(81)90968-6  0.307
1978 Chandrasekhar M, Renucci JB, Cardona M. Effects of interband excitations on Raman phonons in heavily dopedn−Si Physical Review B. 17: 1623-1633. DOI: 10.1103/Physrevb.17.1623  0.313
1977 Chandrasekhar M, Pollak FH. Effects of uniaxial stress on the electroreflectance spectrum of Ge and GaAs Physical Review B. 15: 2127-2144. DOI: 10.1103/Physrevb.15.2127  0.488
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