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Klaus J. Bachmann - Publications

Affiliations: 
North Carolina State University, Raleigh, NC 
Area:
Materials Science Engineering
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65 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2004 Grenko J, Reynolds C, Schlesser R, Bachmann K, Rietmeier Z, Davis RF, Sitar Z. Selective Etching of GaN from AlGaN/GaN and AlN/GaN Structures Mrs Internet Journal of Nitride Semiconductor Research. 9. DOI: 10.1557/S1092578300000405  0.333
2004 Grenko JA, Reynolds CL, Schlesser R, Hren JJ, Bachmann K, Sitar Z, Kotula PG. Nanoscale GaN whiskers fabricated by photoelectrochemical etching Journal of Applied Physics. 96: 5185-5188. DOI: 10.1063/1.1788841  0.302
2003 Cardelino BH, Moore CE, Cardelino CA, McCall SD, Frazier DO, Bachmann KJ. Semiclassical calculation of reaction rate constants for homolytical dissociation reactions of interest in organometallic vapor-phase epitaxy (OMVPE) Journal of Physical Chemistry A. 107: 3708-3718. DOI: 10.1021/Jp026289J  0.678
2002 McCall SD, Bachmann KJ. Three-dimensional modeling of the high pressure organometallic chemical vapor deposition of InN using trimethylindium and ammonia Materials Research Society Symposium - Proceedings. 693: 73-80. DOI: 10.1557/Proc-693-I3.13.1  0.7
2002 Narayanan V, Mahajan S, Bachmann KJ, Woods V, Dietz N. Stacking faults and twins in gallium phosphide layers grown on silicon Philosophical Magazine a: Physics of Condensed Matter, Structure, Defects and Mechanical Properties. 82: 685-698. DOI: 10.1080/01418610110082034  0.367
2002 Narayanan V, Mahajan S, Bachmann KJ, Woods V, Dietz N. Antiphase boundaries in GaP layers grown on (001) Si by chemical beam epitaxy Acta Materialia. 50: 1275-1287. DOI: 10.1016/S1359-6454(01)00408-6  0.365
2000 Narayanan V, Mahajan S, Bachmann KJ, Woods V, Dietz N. Island coalescence induced substructure within GaP epitaxial layers grown on (001), (111), (110) and (113) Si Materials Research Society Symposium - Proceedings. 618: 53-58. DOI: 10.1557/Proc-618-53  0.365
2000 Narayanan V, Mahajan S, Sukidit N, Bachmann KJ, Wooos V, Dietz N. Orientation mediated self-assembled gallium phosphide islands grown on silicon Philosophical Magazine a: Physics of Condensed Matter, Structure, Defects and Mechanical Properties. 80: 555-572. DOI: 10.1080/01418610008212068  0.397
1999 Bachmann KJ, Cardelino BH, Moore CE, Cardelino CA, Sukidi N, Mccall S. Modeling and real-time process monitoring of organometallic chemical vapor deposition of III-V phosphides and nitrides at low and high pressures Materials Research Society Symposium - Proceedings. 569: 59-70. DOI: 10.1557/Proc-569-59  0.423
1999 Sukidi N, Bachmann KJ, Narayanan V, Mahajan S. Initial stages of heteroepitaxy of GaP on selected silicon surfaces Journal of the Electrochemical Society. 146: 1147-1150. DOI: 10.1149/1.1391736  0.413
1999 Bachmann KJ, Banks HT, Höpfner C, Kepler GM, Lesure S, McCall SD, Scroggs JS. Optimal design of a high pressure organometallic chemical vapor deposition reactor Mathematical and Computer Modelling. 29: 65-80. DOI: 10.1016/S0895-7177(99)00071-0  0.691
1999 Narayanan V, Sukidi N, Bachmann KJ, Mahajan S. Origins of defects in self assembled GaP islands grown on Si(001) and Si(111) Thin Solid Films. 357: 53-56. DOI: 10.1016/S0040-6090(99)00474-5  0.348
1998 Kepler GM, Höpfner C, Scroggs JS, Bachmann KJ. Simulation of a vertical reactor for high pressure organometallic chemical vapor deposition Materials Science and Engineering B. 57: 9-17. DOI: 10.1016/S0921-5107(98)00256-6  0.331
1998 Narayanan V, Sukidi N, Hu C, Dietz N, Bachmann KJ, Mahajan S, Shingubara S. Growth of gallium phosphide layers by chemical beam epitaxy on oxide patterned (001)silicon substrates Materials Science and Engineering B. 207-209. DOI: 10.1016/S0921-5107(98)00169-X  0.337
1998 Bachmann KJ, Sukidi N, Höpfner C, Harris C, Dietz N, Tran HT, Beeler S, Ito K, Banks HT. Real-time monitoring of steady-state pulsed chemical beam epitaxy by p-polarized reflectance Journal of Crystal Growth. 183: 323-337. DOI: 10.1016/S0022-0248(97)00410-7  0.341
1997 Timmons ML, Bachmann KJ. Growth of NLO chalcopyrite materials by OMVPE Materials Research Society Symposium - Proceedings. 484: 507-518. DOI: 10.1557/Proc-484-507  0.361
1997 Fiechter S, Castleberry RH, Angelov M, Bachmann KJ. Melt growth of ZnGeP2: Homogeneity range and thermochemical properties Materials Research Society Symposium - Proceedings. 450: 315-320. DOI: 10.1557/Proc-450-315  0.345
1997 Aspnes DE, Dietz N, Rossow U, Bachmann KJ. Multilevel approaches toward monitoring and control of semiconductor epitaxy Materials Research Society Symposium - Proceedings. 448: 451-462. DOI: 10.1557/Proc-448-451  0.318
1997 Dietz N, Sukidi N, Harris C, Bachmann KJ. Real-time characterization of the optical properties of an ultra-thin surface reaction layer during growth Materials Research Society Symposium - Proceedings. 441: 39-44. DOI: 10.1557/Proc-441-39  0.383
1997 Dietz N, Sukidi N, Harris C, Bachmann KJ. Real-time monitoring of surface processes by p-polarized reflectance Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 15: 807-815. DOI: 10.1116/1.580712  0.42
1997 Bachmann KJ, Höpfner C, Sukidi N, Miller AE, Harris C, Aspnes DE, Dietz NA, Tran HT, Beeler S, Ito K, Banks HT, Rossow U. Molecular layer epitaxy by real-time optical process monitoring Applied Surface Science. 112: 38-47. DOI: 10.1016/S0169-4332(96)00975-0  0.413
1997 Dietz N, Sukidi N, Harris C, Bachmann KJ. Real-time monitoring of heteroepitaxial GaxIn1-xP growth on Si(001) by P-polarized reflectance Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 521-524.  0.308
1996 Dietz N, Busse W, Gumlich HE, Ruderman W, Tsveybak I, Wood G, Bachmann KJ. Defect Characterization in ZnGeP2 by Time -Resolved Photoluminescence Mrs Proceedings. 450. DOI: 10.1557/Proc-450-333  0.3
1996 Dietz N, Rossow U, Aspnes DE, Sukidi N, Bachmann KJ. Real-time optical monitoring of GaxIn1-xGaP heterostructures on silicon Materials Research Society Symposium - Proceedings. 406: 127-132. DOI: 10.1557/Proc-406-127  0.389
1996 Dietz N, Bachmann KJ, Aspnes DE. Optical investigations of surface processes in GaP heteroepitaxy on silicon under pulsed chemical beam epitaxy conditions Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 14: 3040-3046. DOI: 10.1116/1.589061  0.399
1996 Bachmann KJ. The control of stoichiometry in epitaxial semiconductor structures: interfacial chemistry—property relations Materials Science and Engineering B-Advanced Functional Solid-State Materials. 41: 352-356. DOI: 10.1016/S0921-5107(96)01655-8  0.33
1996 Dietz N, Rossow U, Aspnes DE, Bachmann KJ. Real-time optical monitoring of heteroepitaxial growth processes on Si under pulsed chemical beam epitaxy conditions Applied Surface Science. 102: 47-51. DOI: 10.1016/0169-4332(96)00017-7  0.407
1996 Dietz N, Bachmann KJ. p-polarized reflectance spectroscopy: A highly sensitive real-time monitoring technique to study surface kinetics under steady state epitaxial deposition conditions Vacuum. 47: 133-140. DOI: 10.1016/0042-207X(95)00232-4  0.404
1996 Dietz N, Rossow U, Aspnes DE, Bachmann KJ. Real-time optical monitoring of GaxIn1-xP and GaP heteroepitaxy on Si under pulsed chemical beam conditions Journal of Crystal Growth. 164: 34-39. DOI: 10.1016/0022-0248(95)01018-1  0.416
1995 Dietz N, Bachmann KJ. Real-Time Monitoring of Epitaxial Processes by Parallel-Polarized Reflectance Spectroscopy Mrs Bulletin. 20: 49-55. DOI: 10.1557/S0883769400044894  0.398
1995 Miller AE, Kelliher JT, Dietz N, Bachmann KJ. Surface and defect structure of epitaxial gallium phosphide on Si(001) Materials Research Society Symposium - Proceedings. 355: 197-202. DOI: 10.1557/Proc-355-197  0.422
1995 Bachmann KJ, Dietz N, Miller AE, Venables D, Kelliher JT. Heteroepitaxy of lattice-matched compound semiconductors on silicon Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 13: 696-704. DOI: 10.1116/1.579810  0.419
1995 Dietz N, Bachmann KJ, Miller A. Real-time monitoring of homoepitaxial and heteroepitaxial processes by p-polarized reflectance spectroscopy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 13: 153-155. DOI: 10.1116/1.579432  0.392
1995 Bachmann KJ, Rossow U, Dietz N. Real-time monitoring of heteroepitaxial growth processes on the silicon(001) surface by p-polarized reflectance spectroscopy Materials Science and Engineering B. 35: 472-478. DOI: 10.1016/0921-5107(95)01411-X  0.424
1995 Kelliher JT, Miller AE, Dietz N, Habermehl S, Chen YL, Lu Z, Lucovsky G, Bachmann KJ. Interrupted cycle chemical beam epitaxy of gallium phosphide on silicon with or without photon assistance Applied Surface Science. 86: 453-456. DOI: 10.1016/0169-4332(94)00432-3  0.404
1995 Dietz N, Miller A, Kelliher JT, Venables D, Bachmann KJ. Migration-enhanced pulsed chemical beam epitaxy of GaP on Si(001) Journal of Crystal Growth. 150: 691-695. DOI: 10.1016/0022-0248(95)80297-P  0.432
1995 Xing GC, Bachmann KJ. ZnGeP2 GaP multiple heterostructures on GaP substrates Journal of Crystal Growth. 147: 35-38. DOI: 10.1016/0022-0248(94)00593-1  0.399
1995 Dietz N, Rossow U, Aspnes D, Bachmann KJ. Real-time optical monitoring of epitaxial growth: Pulsed chemical beam epitaxy of GaP and InP homoepitaxy and heteroepitaxy on Si Journal of Electronic Materials. 24: 1571-1576. DOI: 10.1007/Bf02676813  0.422
1994 Dietz N, Stephens DJ, Lucovsky G, Bachmann KJ. In-situ multilayer film growth characterization by Brewster Angle Reflectance Differential Spectroscopy Materials Research Society Symposium Proceedings. 324: 27-32. DOI: 10.1557/Proc-324-27  0.383
1994 Liu J, Son UT, Stepanova AN, Christensen KN, Wojak GJ, Givargizov EI, Bachmann KJ, Hren JJ. Modification of Si field emitter surfaces by chemical conversion to SiC Journal of Vacuum Science & Technology B. 12: 717-721. DOI: 10.1116/1.587379  0.392
1994 Habermehl S, Dietz N, Lu Z, Bachmann KJ, Lucovskv G. Heteroepitaxial growth of Si on GaP and GaAs surfaces by remote, plasma enhanced chemical vapor deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 12: 990-994. DOI: 10.1116/1.579077  0.438
1994 Dietz N, Tsveybak I, Ruderman W, Wood G, Bachmann KJ. Native defect related optical properties of ZnGeP2 Applied Physics Letters. 65: 2759-2761. DOI: 10.1063/1.112555  0.34
1993 Dietz N, Habermehl S, Kelliher JT, Lucovsky G, Bachmann KJ. Growth and Characterization of Si-GaP and Si-GaP-Si Heterostructures Mrs Proceedings. 334: 495. DOI: 10.1557/Proc-334-495  0.32
1993 Kelliher JT, Thornton JT, Russell PE, Bachmann KJ. Surface Morphology of Gallium Phosphide Deposited by Chemical Beam Epitaxy and Interrupted Cycle Chemical Beam Epitaxy Mrs Proceedings. 317. DOI: 10.1557/Proc-317-597  0.408
1993 Liu J, Son UT, Stepanova AN, Christensen KN, Wojak GW, Givargizov EI, Bachmann KJ, Hren JJ. Formation of SiC films on silicon field emitters Materials Research Society Symposium Proceedings. 311: 21-26. DOI: 10.1557/Proc-311-21  0.385
1993 Kelliher JT, Thornton J, Dietz N, Lucovsky G, Bachmann KJ. Low temperature chemical beam epitaxy of gallium phosphide/silicon heterostructures Materials Science and Engineering B. 22: 97-102. DOI: 10.1016/0921-5107(93)90232-C  0.449
1992 Bachmann KJ. Lattice-Matched Heteroepitaxy of Wide Gap Ternary Compound Semiconductors Mrs Proceedings. 242: 707-719. DOI: 10.1557/Proc-242-707  0.331
1992 Choi SW, Timmons ML, Bachmann KJ, Colpitts TS, Posthill JB. The Growth and Characterization of AlxGa1-x As/Ge Heterostructures Journal of the Electrochemical Society. 139: 312-316. DOI: 10.1149/1.2069191  0.37
1991 Xing GC, Bachmann KJ, Posthill JB, Timmons ML. Substrate effects on the epitaxial growth of ZnGeP2 thin films by open tube organometallic chemical vapor deposition Journal of Applied Physics. 69: 4286-4291. DOI: 10.1063/1.348401  0.431
1991 Xing GC, Bachmann KJ, Posthill JB, Timmons ML. Organometallic chemical vapor deposition and characterization of ZnGe-xSixP2-Ge alloys on GaP substrates Journal of Crystal Growth. 113: 113-119. DOI: 10.1016/0022-0248(91)90015-W  0.382
1990 Kelliher JT, Bachmann KJ. Phase Relations and Bulk Crystal Growth in the System CuInTe2-MnIn2Te4 Mrs Proceedings. 216. DOI: 10.1557/Proc-216-479  0.304
1990 Choi S, Bachmann K, Lucovsky G. Deposition of GaN by Remote Plasma-Enhanced Chemical-Vapor Deposition (Remote PECVD) Mrs Proceedings. 204. DOI: 10.1557/Proc-204-195  0.366
1990 Kingon AI, Hsieh KY, King LLH, Rou SH, Bachmann KJ, Davis RF. PbTiO 3 Thin Films by Chemical Beam Deposition Mrs Proceedings. 200: 49. DOI: 10.1557/Proc-200-49  0.327
1990 Bade JP, Baker EA, Kingon AI, Davis RF, Bachmann KJ. Deposition of oxide films by metal‐organic molecular‐beam epitaxy Journal of Vacuum Science & Technology B. 8: 327-331. DOI: 10.1116/1.585063  0.338
1989 Xing GC, Bachmann KJ, Posthill JB, Timmons ML. ZnGeP 2 : A Wide Bandgap Chalcopyrite Structure Semiconductor for Nonlinear Optical Applications Mrs Proceedings. 162: 615. DOI: 10.1557/Proc-162-615  0.419
1989 Lee YH, Ma G, Bachmann KJ, Glass JT. Bias Controlled Hot Filament Chemical Vapor Deposition of Diamond Thin Film on Various Substrates Mrs Proceedings. 162. DOI: 10.1557/Proc-162-119  0.412
1989 Xing GC, Bachmann KJ, Solomon GS, Posthill JB, Timmons ML. Organometallic chemical vapor deposition of epitaxial ZnGeP2 films on (001) GaP substrates Journal of Crystal Growth. 94: 381-386. DOI: 10.1016/0022-0248(89)90012-2  0.437
1987 Bachmann KJ, Goslowsky H. ISSUES IN THE GROWTH OF BULK CRYSTALS OF INFRARED MATERIALS Materials Research Society Symposia Proceedings. 90: 69-80. DOI: 10.1557/Proc-90-69  0.34
1987 Neff H, Lay KY, Su MS, Lange P, Bachmann KJ. Sputter induced near surface electronic defects in group II-VI compound semiconductor alloys Surface Science. 189: 661-668. DOI: 10.1016/S0039-6028(87)80496-X  0.324
1987 Bachmann KJ, Abid B, Goslowsky H, Lay KY, Neff H, Lange P. II-VI and I-III-VI2 alloy crystals for photovoltaic applications Solar Cells. 21: 99-108. DOI: 10.1016/0379-6787(87)90108-6  0.351
1986 Neff H, Lay KY, Abid B, Lange P, Lucovsky G, Bachmann KJ. Sputtering and native oxide formation on (110) surfaces of Cd 1-xMnxTe Journal of Applied Physics. 60: 151-155. DOI: 10.1063/1.337678  0.307
1985 Lange P, Neff H, Fearheiley M, Bachmann KJ. Optical Properties of CuInSe2 and Related Compounds Journal of the Electrochemical Society. 132: 2281-2283. DOI: 10.1149/1.2114335  0.311
1984 Bachmann KJ, Menezes S, Kötz R, Fearheily M, Lewerenz HJ. Relation between surface chemistry and solar cell performance of CuInSe2 single crystal electrodes Surface Science. 138: 475-487. DOI: 10.1016/0039-6028(84)90260-7  0.308
1983 Bachmann KJ. Growth of compound semiconductor photovoltaic materials Journal of Crystal Growth. 65: 464-473. DOI: 10.1016/0022-0248(83)90088-X  0.353
1981 Lewerenz HJ, Lübke M, Bachmann KJ, Menezes S. Oxide optimization at the p-Si/aqueous electrolyte interface Applied Physics Letters. 39: 798-800. DOI: 10.1063/1.92587  0.31
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