Year |
Citation |
Score |
1985 |
Lee SJ, Crowell CR. Parasitic source and drain resistance in high-electron-mobility transistors Solid State Electronics. 28: 659-668. DOI: 10.1016/0038-1101(85)90016-4 |
0.301 |
|
1980 |
Kao CW, Anderson CL, Crowell CR. Photoelectron injection at metal-semiconductor interfaces Surface Science. 95: 321-339. DOI: 10.1016/0039-6028(80)90145-4 |
0.406 |
|
1980 |
Kao CW, Crowell CR. IMPACT IONIZATION BY ELECTRONS AND HOLES IN InP Solid-State Electronics. 23: 881-891. DOI: 10.1016/0038-1101(80)90106-9 |
0.354 |
|
1979 |
Chwang R, Kao CW, Crowell CR. Normalized theory of impact ionization and velocity saturation in nonpolar semiconductors via a Markov chain approach Solid State Electronics. 22: 599-620. DOI: 10.1016/0038-1101(79)90134-5 |
0.364 |
|
1977 |
Crowell CR. The physical significance of the T0 anomalies in Schottky barriers Solid State Electronics. 20: 171-175. DOI: 10.1016/0038-1101(77)90180-0 |
0.343 |
|
1976 |
Anderson CL, Baron R, Crowell CR. Variable-frequency automatic capacitance/conductance system for impurity profile and deep level determination Review of Scientific Instruments. 47: 1366-1376. DOI: 10.1063/1.1134526 |
0.319 |
|
1976 |
Huang CH, Crowell CR, Univ of South Calif LA. EFFECT OF MINORITY-CARRIER INJECTION ON SCHOTTKY-BARRIER HEIGHTS THAT APPROACH THE SEMICONDUCTOR BAND GAP J Vac Sci Technol. 13: 876-883. |
0.324 |
|
1975 |
Anderson CL, Crowell CR, Kao TW. Effects of thermal excitation and quantum-mechanical transmission on photothreshold determination of Schottky barrier height Solid State Electronics. 18: 705-713. DOI: 10.1016/0038-1101(75)90143-4 |
0.431 |
|
1975 |
Okuto Y, Crowell CR. Threshold energy effect on avalanche breakdown voltage in semiconductor junctions Solid State Electronics. 18: 161-168. DOI: 10.1016/0038-1101(75)90099-4 |
0.377 |
|
1974 |
Beguwala M, Crowell CR. Characterization of multiple deep level systems in semiconductor junctions by admittance measurements Solid State Electronics. 17: 203-214. DOI: 10.1016/0038-1101(74)90068-9 |
0.305 |
|
1973 |
Roberts GI, Crowell CR. Capacitive effects of Au and Cu impurity levels in Pt-N type Si Schottky barriers Solid State Electronics. 16: 29-38. DOI: 10.1016/0038-1101(73)90122-6 |
0.339 |
|
1972 |
Crowell CR, Nakano K. Deep level impurity effects on the frequency dependence of Schottky barrier capacitance Solid State Electronics. 15: 605-610. DOI: 10.1016/0038-1101(72)90002-0 |
0.326 |
|
1971 |
Crowell CR, Beguwala M. Recombination velocity effects on current diffusion and imref in schottky barriers Solid State Electronics. 14: 1149-1157. DOI: 10.1016/0038-1101(71)90027-X |
0.356 |
|
1970 |
Rideout VL, Crowell CR. Effects of image force and tunneling on current transport in metal-semiconductor (Schottky barrier) contacts Solid State Electronics. 13: 993-1009. DOI: 10.1016/0038-1101(70)90097-3 |
0.373 |
|
1969 |
Crowell CR. Metal-semiconductor interfaces Surface Science. 13: 13-16. DOI: 10.1016/0039-6028(69)90232-5 |
0.301 |
|
1969 |
Crowell CR. Richardson constant and tunneling effective mass for thermionic and thermionic-field emission in Schottky barrier diodes Solid State Electronics. 12: 55-59. DOI: 10.1016/0038-1101(69)90135-X |
0.36 |
|
1969 |
Crowell CR, Rideout VL. Normalized thermionic-field (T-F) emission in metal-semiconductor (Schottky) barriers Solid State Electronics. 12: 89-105. DOI: 10.1016/0038-1101(69)90117-8 |
0.374 |
|
1966 |
Crowell CR, Sze SM. Current transport in metal-semiconductor barriers Solid State Electronics. 9: 1035-1048. DOI: 10.1016/0038-1101(66)90127-4 |
0.421 |
|
1965 |
Crowell CR, Shore HB, LaBate EE. Surface-state and interface effects in Schottky barriers at n-type silicon surfaces Journal of Applied Physics. 36: 3843-3850. DOI: 10.1063/1.1713959 |
0.35 |
|
1965 |
Crowell CR, Sze SM. Electron-optical-phonon scattering in the emitter and collector barriers of semiconductor-metal-semiconductor structures Solid State Electronics. 8: 979-990. DOI: 10.1016/0038-1101(65)90164-4 |
0.387 |
|
1965 |
Crowell CR. The Richardson constant for thermionic emission in Schottky barrier diodes Solid State Electronics. 8: 395-399. DOI: 10.1016/0038-1101(65)90116-4 |
0.373 |
|
1965 |
Crowell CR, Sze SM. Electron-phonon collector backscattering in hot electron transistors Solid State Electronics. 8: 673-683. DOI: 10.1016/0038-1101(65)90035-3 |
0.375 |
|
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