Year |
Citation |
Score |
2006 |
Huygens I, Gomes W, Strubbe K. Defect Luminescence at n-GaN Electrodes A Comparative Study Between n-GaN Grown on Sapphire Substrates and on Si Substrates Journal of the Electrochemical Society. 153: 72. DOI: 10.1149/1.2135218 |
0.365 |
|
2005 |
Huygens I, Gomes W, Strubbe K. Photocurrent multiplication at n-GaN electrodes in formic acid solutions Electrochimica Acta. 50: 2919-2926. DOI: 10.1016/J.Electacta.2004.11.041 |
0.403 |
|
2003 |
Huygens I, Gomes W, Theuwis A, Strubbe K. Subbandgap Photoluminescence and Electroluminescence at n-GaN Electrodes in Aqueous Solutions Journal of the Electrochemical Society. 150. DOI: 10.1149/1.1603251 |
0.4 |
|
2003 |
Huygens I, Theuwis A, Gomes W, Strubbe K. A (Photo-)Electrochemical Study on n-GaN in Aqueous Solutions Physica Status Solidi (C). 448-452. DOI: 10.1002/Pssc.200390085 |
0.434 |
|
2002 |
Theuwis A, Strubbe K, Depestel L, Gomes W. A photoelectrochemical study of InxGa1-xN films Journal of the Electrochemical Society. 149. DOI: 10.1149/1.1468647 |
0.318 |
|
2002 |
Huygens I, Theuwis A, Gomes W, Strubbe K. Photoelectrochemical reactions at the n-GaN electrode in 1 M H2SO4 and in acidic solutions containing Cl− ions Physical Chemistry Chemical Physics. 4: 2301-2306. DOI: 10.1039/B110839P |
0.412 |
|
2000 |
Huygens I, Strubbe K, Gomes W. Electrochemistry and Photoetching of n‐GaN Journal of the Electrochemical Society. 147: 1797-1802. DOI: 10.1149/1.1393436 |
0.413 |
|
2000 |
Hens Z, Gomes W. Photoanodic Dissolution of n-InP: An Electrochemical Impedance Study Journal of Physical Chemistry B. 104: 7725-7734. DOI: 10.1021/Jp0010740 |
0.415 |
|
1999 |
Hens Z, Gomes W. On the electrochemical impedance of InP and GaAs electrodes in indifferent electrolyte. Part 2. Experimental study on the factors influencing the frequency dispersion Physical Chemistry Chemical Physics. 1: 3617-3625. DOI: 10.1039/A903463C |
0.378 |
|
1999 |
Hens Z, Gomes W. On the electrochemical impedance of InP and GaAs electrodes in indifferent electrolyte. Part 1. Analytical description of the frequency dispersion Physical Chemistry Chemical Physics. 1: 3607-3615. DOI: 10.1039/A901265F |
0.351 |
|
1999 |
Hens Z, Gomes W. The Electrochemical Impedance of One-Equivalent Electrode Processes at Dark Semiconductor/Redox Electrodes Involving Charge Transfer through Surface States. 2. The n-GaAs/Fe3+ System as an Experimental Example Journal of Physical Chemistry B. 103: 130-138. DOI: 10.1021/Jp9827678 |
0.409 |
|
1998 |
Vereecken P, Strubbe K, Gomes W. The Electrochemical Behavior of p‐Type (100) GaAs in Copper Sulfate Solution Influence of Surface Conditions Journal of the Electrochemical Society. 145: 3075-3082. DOI: 10.1149/1.1838767 |
0.31 |
|
1998 |
Hens Z, Gomes W. The electrochemical impedance of reversible semiconductor electrodes : The n-InP/methylviologen electrode as an example Electrochimica Acta. 43: 2577-2587. DOI: 10.1016/S0013-4686(97)10184-0 |
0.422 |
|
1997 |
Theuwis A, Gomes W. A fundamental study on n- and p-In0.53Ga0.47As in H2O2 solution : electrochemical behavior and selective etching vs. InP Journal of the Electrochemical Society. 144: 1390-1398. DOI: 10.1149/1.1837601 |
0.324 |
|
1997 |
Hens Z, Gomes W. On The Diffusion Impedance At Semiconductor Electrodes Journal of Physical Chemistry B. 101: 5814-5821. DOI: 10.1021/Jp970283Q |
0.412 |
|
1997 |
Vereecken P, Strubbe K, Gomes W. An improved procedure for the processing of chronoamperometric data: Application to the electrodeposition of Cu upon (100) n-GaAs Journal of Electroanalytical Chemistry. 433: 19-31. DOI: 10.1016/S0022-0728(97)00195-2 |
0.363 |
|
1997 |
Hens Z, Gomes W. Electrochemical impedance spectroscopy at semiconductor electrodes: the recombination resistance revisited Journal of Electroanalytical Chemistry. 437: 77-83. DOI: 10.1016/S0022-0728(97)00092-2 |
0.414 |
|
1996 |
Vermeir I, Gomes W. The Etching of InP by Acidic Iodine Solutions A Kinetic and Electrochemical Study Journal of the Electrochemical Society. 143: 1319-1325. DOI: 10.1149/1.1836637 |
0.427 |
|
1996 |
Verpoort P, Vermeir I, Gomes W. Investigation on the electrochemistry and etching at the (100) GaAs ¦ HIO3 interface Journal of Electroanalytical Chemistry. 411: 67-72. DOI: 10.1016/0022-0728(96)04567-6 |
0.431 |
|
1996 |
Theuwis A, Vermeir I, Gomes W. Chemical and electrochemical interaction of acidic H2O2 solutions with (100) InP. Journal of Electroanalytical Chemistry. 410: 31-42. DOI: 10.1016/0022-0728(96)04532-9 |
0.416 |
|
1996 |
Gomes W, Vanmaekelbergh D. Impedance spectroscopy at semiconductor electrodes: Review and recent developments Electrochimica Acta. 41: 967-973. DOI: 10.1016/0013-4686(95)00427-0 |
0.55 |
|
1995 |
Verpoort P, Vermeir I, Gomes W. Fundamental Study on the Selective Etching of Al0.25Ga0.75As Versus GaAs in Acidic Iodine Solutions Journal of the Electrochemical Society. 142: 3589-3595. DOI: 10.1149/1.2050028 |
0.377 |
|
1994 |
Vermeir I, Gomes W. On the etching of InP in alkaline K3Fe(CN)6 solutions Journal of Electroanalytical Chemistry. 365: 59-69. DOI: 10.1016/0022-0728(93)02989-U |
0.462 |
|
1993 |
Strubbe K, Gomes W. Bromine‐Methanol as an Etchant for Semiconductors: A Fundamental Study on GaP II . Interaction Between Chemical and Anodic Etching of p‐Type Journal of the Electrochemical Society. 140: 3301-3305. DOI: 10.1149/1.2221027 |
0.422 |
|
1993 |
Strubbe K, Gomes W. Bromine‐Methanol as an Etchant for Semiconductors: A Fundamental Study on GaP I . Etching Behavior of n‐ and p‐Type Journal of the Electrochemical Society. 140: 3294-3300. DOI: 10.1149/1.2221026 |
0.346 |
|
1993 |
Strubbe K, Gomes W. The effect of high LiCl concentrations upon the competition between anodic decomposition and stabilization of the n-GaAs/Fe2+ electrode Journal of Electroanalytical Chemistry. 349: 429-441. DOI: 10.1016/0022-0728(93)80188-N |
0.414 |
|
1992 |
Strubbe K, Goossens HH, Gomes WP. The role of water activity in the competition between anodic decomposition and stabilization of the GaP/Fe2+ electrode Electrochimica Acta. 37: 1343-1350. DOI: 10.1016/0013-4686(92)87005-K |
0.394 |
|
1992 |
Goossens HH, Gomes WP. (Photo)electrochemistry: a suitable tool for investigating wet etching processes on III-V semicondutors Electrochimica Acta. 37: 811-826. DOI: 10.1016/0013-4686(92)85034-I |
0.354 |
|
1982 |
Madou M, Brondeel P, Gomes W, Hanselaer P, Cardon F. Investigation on photoelectrochemical cells based upon silicon/methanol interfaces. Part 1: n-type Si Solar Energy Materials. 7: 33-42. DOI: 10.1016/0165-1633(82)90093-4 |
0.347 |
|
1978 |
Vervaet A, Gomes W, Cardon F. Some Electrochemical Processes at the n- and p-InP Electrodes. Journal of Electroanalytical Chemistry. 91: 133-136. DOI: 10.1016/S0022-0728(78)80257-5 |
0.403 |
|
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