| Year |
Citation |
Score |
| 1998 |
Ballantyne JM. Materials and devices for silicon on-chip optical interconnect Materials Research Society Symposium - Proceedings. 514: 83-87. DOI: 10.1557/Proc-514-83 |
0.312 |
|
| 1998 |
Michalak RJ, Lee JW, Schaff WJ, Ballantyne JM, Johnson KA. Microstructure and composition of mixed GaAsN/GaN films Proceedings of Spie - the International Society For Optical Engineering. 3384: 198-208. DOI: 10.1117/12.317662 |
0.307 |
|
| 1998 |
Lee JW, Schremer AT, Shealy JR, Ballantyne JM. GaInP/GaP quantum dots - A material for OEIC on silicon substrates Proceedings of Spie - the International Society For Optical Engineering. 3290: 20-31. DOI: 10.1117/12.298246 |
0.436 |
|
| 1998 |
Ji C, Leary MH, Ballantyne JM. Long wavelength triangular ring laser for monolithic integration Proceedings of Spie - the International Society For Optical Engineering. 3290: 82-90. DOI: 10.1117/12.298229 |
0.415 |
|
| 1997 |
Ji C, Leary MH, Ballantyne JM. Long-wavelength triangular ring laser Ieee Photonics Technology Letters. 9: 1469-1471. DOI: 10.1109/68.634711 |
0.333 |
|
| 1997 |
Liang JJ, Lau ST, Leary MH, Ballantyne JM. Unidirectional operation of waveguide diode ring lasers Applied Physics Letters. 70: 1192-1194. DOI: 10.1063/1.118527 |
0.404 |
|
| 1997 |
Ji C, Leary M, Ballantyne JM. Triangular shaped waveguide diode ring laser fabricated using Cl2 RIBE in InP/InGaAsP Electronics Letters. 33: 493-494. DOI: 10.1049/El:19970351 |
0.434 |
|
| 1997 |
Lee JW, Salzman J, Emerson D, Shealy JR, Ballantyne JM. Selective area growth of GaP on Si by MOCVD Journal of Crystal Growth. 172: 53-57. DOI: 10.1016/S0022-0248(96)00738-5 |
0.357 |
|
| 1997 |
Lee JW, Schremer AT, Fekete D, Shealy JR, Ballantyne JM. Growth of direct bandgap GaInP quantum dots on GaP substrates Journal of Electronic Materials. 26: 1199-1204. DOI: 10.1007/S11664-997-0020-0 |
0.383 |
|
| 1997 |
Ji C, Leafy MH, Ballantyne JM. Triangular ring laser in InP/InGaAsP Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 1: 7-8. |
0.391 |
|
| 1997 |
Lee JW, Schremer AT, Shealy JR, Ballantyne JM. Visible electroluminescence (630 nm) from direct bandgap GaInP quantum dots grown on transparent GaP substrates Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2: 529-530. |
0.301 |
|
| 1996 |
Lee J, Schremer AT, Fekete D, Shealy JR, Ballantyne JM. Direct Bandgap Quantum Wells on GaP Mrs Proceedings. 448. DOI: 10.1557/Proc-448-165 |
0.305 |
|
| 1996 |
Lee JS, Salzman J, Emerson D, Shealy JR, Ballantyne JM. Selective growth of GaP on Si by metal organic vapor phase epitaxy Materials Research Society Symposium - Proceedings. 417: 301-305. DOI: 10.1557/Proc-417-301 |
0.374 |
|
| 1996 |
Lee J‐, Schremer AT, Fekete D, Ballantyne JM. GaInP/GaP partially ordered layer type‐I strained quantum well Applied Physics Letters. 69: 4236-4238. DOI: 10.1063/1.116956 |
0.386 |
|
| 1994 |
Liang JJ, Ballantyne JM. Self-aligned dry-etching process for waveguide diode ring lasers Journal of Vacuum Science & Technology B. 12: 2929-2932. DOI: 10.1116/1.587538 |
0.423 |
|
| 1992 |
Behfar-Rad A, Ballantyne JM, Wong SS. AlGaAs/GaAs-based triangular-shaped ring ridge lasers Applied Physics Letters. 60: 1658-1660. DOI: 10.1063/1.107228 |
0.419 |
|
| 1991 |
Behfar-Rad A, Ballantyne JM, Wong SS. Etched-facet AlGaAs triangular-shaped ring lasers with output coupling Applied Physics Letters. 59: 1395-1397. DOI: 10.1063/1.105317 |
0.431 |
|
| 1990 |
Yellen SL, Waters RG, Chen YC, Soltz BA, Fischer SE, Fekete D, Ballantyne JM. 20,000 h InGaAs Quantum well lasers Electronics Letters. 26: 2083-2084. DOI: 10.1049/El:19901342 |
0.4 |
|
| 1990 |
Behfar-Rad A, Wong SS, Ballantyne JM. Travelling-wave operation in a triangular-shaped monolithic semiconductor ring ridge laser Technical Digest - International Electron Devices Meeting. 934-935. |
0.322 |
|
| 1990 |
Zhu L, Feak GAB, Ballantyne JM, Wagner DK, Tihanyi PL. Phased array laser made of GaAs/GaAlAs graded barrier single quantum well structure Proceedings of Spie - the International Society For Optical Engineering. 1230: 376-378. |
0.315 |
|
| 1989 |
Waters RG, Harding CM, Soltz BA, York PK, Baillargeon JN, Coleman JJ, Fischer SE, Fekete D, Ballantyne JM. The influence of in on the performance of (AL) GaAs single quantum well lasers Proceedings of Spie - the International Society For Optical Engineering. 1043: 310-314. DOI: 10.1117/12.976386 |
0.354 |
|
| 1989 |
Fischer SE, Waters RG, Fekete D, Ballantyne JM, Chen YC, Soltz BA. Long-lived InGaAs quantum well lasers Applied Physics Letters. 54: 1861-1862. DOI: 10.1063/1.101260 |
0.45 |
|
| 1989 |
Behfar-Rad A, Wong SS, Ballantyne JM, Soltz BA, Harding CM. Rectangular and L-shaped GaAs/AlGaAs lasers with very high quality etched facets Applied Physics Letters. 54: 493-495. DOI: 10.1063/1.100960 |
0.423 |
|
| 1989 |
Zhu L, Feak GAB, Ballantyne JM, Wagner DK, Tihanyi PL. Kind of phased array lasers made of GaAs/GaAlAs graded index separate confinement single quantum well heterostructures Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors. 10: 799-804. |
0.32 |
|
| 1987 |
Zhu LD, Feak GAB, Davis RJ, Ballantyne JM. Low threshold ridge waveguide single quantum well laser processed by chemically assisted ion beam etching Ieee Journal of Quantum Electronics. 23: 309-312. DOI: 10.1109/Jqe.1987.1073346 |
0.334 |
|
| 1987 |
Fekete D, Bour D, Ballantyne JM, Eastman LF. GaAs/GaAlAs quantum well laser with a lateral spatial variation in thickness grown by metalorganic chemical vapor deposition Applied Physics Letters. 50: 635-637. DOI: 10.1063/1.98104 |
0.461 |
|
| 1987 |
Fischer SE, Fekete D, Feak GB, Ballantyne JM. Ridge waveguide injection laser with a GaInAs strained-layer quantum well (λ=1 μm) Applied Physics Letters. 50: 714-716. DOI: 10.1063/1.98076 |
0.47 |
|
| 1987 |
Zhu LD, Feak GB, Ballantyne JM, Wagner DK, Tihanyi P. In-phase coupling between ridge guide lasers by introducing distributed saturable absorption regions in subordinate laser cavities Applied Physics Letters. 50: 1550-1552. DOI: 10.1063/1.97776 |
0.401 |
|
| 1986 |
Feketa D, Chan KT, Ballantyne JM, Eastman LF. Graded-index separate-confinement InGaAs/GaAs strained-layer quantum well laser grown by metalorganic chemical vapor deposition Applied Physics Letters. 49: 1659-1660. DOI: 10.1063/1.97258 |
0.36 |
|
| 1986 |
Ghosh RN, Griffing B, Ballantyne JM. Monolithic integration of GaAs light-emitting diodes and Si metal-oxide-semiconductor field-effect transistors Applied Physics Letters. 48: 370-371. DOI: 10.1063/1.96555 |
0.388 |
|
| 1985 |
Carter CB, Cooman BCD, Cho NH, Fletcher RM, Wagner DK, Ballantyne J. DEFECTS IN GaAs GROWN ON Ge SUBSTRATES Mrs Proceedings. 56: 73. DOI: 10.1557/Proc-56-73 |
0.368 |
|
| 1984 |
Fletcher RM, Wagner DK, Ballantyne JM. GaAs light-emitting diodes fabricated on Ge-coated Si substrates Applied Physics Letters. 44: 967-969. DOI: 10.1063/1.94613 |
0.404 |
|
| 1983 |
Fletcher RM, Wagner DK, Ballantyne JM. Growth and Characterization of Epitaxial GaAs on Ge/Si Substrates Mrs Proceedings. 25. DOI: 10.1557/Proc-25-417 |
0.38 |
|
| 1982 |
Fletcher RM, Wagner DK, Ballantyne JM. Measurement of lateral variation of hole diffusion lengths in GaAs Applied Physics Letters. 41: 256-258. DOI: 10.1063/1.93492 |
0.349 |
|
| 1980 |
Wagner DK, Fletcher RM, Ballantyne JM. High-Resolution Optical Methods for Characterization of Polycrystalline GaAs Thin Films Ieee Transactions On Electron Devices. 27: 2213-2216. DOI: 10.1109/T-Ed.1980.20254 |
0.341 |
|
| 1976 |
Long SI, Ballantyne JM, Eastman LF. An analysis of GaAs LPE growth methods by a diffusion limited growth model Journal of Crystal Growth. 32: 95-100. DOI: 10.1016/0022-0248(76)90015-4 |
0.306 |
|
| 1974 |
Yang L, Ballantyne JM. Epitaxial growth over optical gratings on GaAs Applied Physics Letters. 25: 67-68. DOI: 10.1063/1.1655282 |
0.349 |
|
| 1974 |
Long SI, Ballantyne JM, Eastman LF. Steady-state LPE growth of GaAs Journal of Crystal Growth. 26: 13-20. DOI: 10.1016/0022-0248(74)90191-2 |
0.332 |
|
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