| Year |
Citation |
Score |
| 2019 |
Lai P, Lin C, Kanicki J. Novel Top-Anode OLED/a-IGZO TFTs Pixel Circuit for 8K4K AM-OLEDs Ieee Transactions On Electron Devices. 66: 436-444. DOI: 10.1109/Ted.2018.2877945 |
0.369 |
|
| 2019 |
Huang S, Zheng Y, Chang T, Chen B, Chen P, Chu A, Chen H, Tsao Y, Chen M, Chen W, Wang TT, Kanicki J, Zhang S. Enhancing Repetitive Uniaxial Mechanical Bending Endurance at ${R} = 2$ mm Using an Organic Trench Structure in Foldable Low Temperature Poly-Si Thin-Film Transistors Ieee Electron Device Letters. 40: 913-916. DOI: 10.1109/Led.2019.2909966 |
0.434 |
|
| 2019 |
Sentanin F, Sabadini R, Barros S, Caliman W, Cavalheiro C, Kanicki J, Donoso J, Magon C, Silva I, Silva M, Pawlicka A. Study of ionically conducting nanocomposites for reflective electrochromic devices Electrochimica Acta. 301: 174-182. DOI: 10.1016/J.Electacta.2019.01.130 |
0.301 |
|
| 2018 |
Sengupta A, Zhao C, Konstantinidis AC, Kanicki J. Cascaded systems analysis of a-Se/a-Si and a-InGaZnO TFT passive and active pixel sensors for tomosynthesis. Physics in Medicine and Biology. PMID 30523916 DOI: 10.1088/1361-6560/Aaf5F6 |
0.321 |
|
| 2018 |
Yu EK, Lai P, Kanicki J. Photoluminescence Study of Amorphous InGaZnO Thin-Film Transistors Ieee Transactions On Electron Devices. 65: 1258-1261. DOI: 10.1109/Ted.2018.2798823 |
0.448 |
|
| 2018 |
Chen B, Yu EK, Chang T, Kanicki J. Physical origin of the non-linearity in amorphous In-Ga-Zn-O thin-film transistor current-voltage characteristics Solid-State Electronics. 147: 51-57. DOI: 10.1016/J.Sse.2018.06.001 |
0.405 |
|
| 2018 |
Kim H, Song B, Lee K, Kim J, Kanicki J. High-performance PBT7-Th:PC70BM polymer photodiode with transferred charge blocking layers Organic Electronics. 62: 566-571. DOI: 10.1016/J.Orgel.2018.06.032 |
0.333 |
|
| 2017 |
Lemos R, Alcázar J, Carreño N, Andrade J, Pawlicka A, Kanicki J, Gundel A, Azevedo C, Avellaneda C. Influence of molybdenum trioxide thin film thickness on its electrochemical properties Molecular Crystals and Liquid Crystals. 655: 40-50. DOI: 10.1080/15421406.2017.1360689 |
0.357 |
|
| 2017 |
Cheng M, Zhao C, Kanicki J. Study of current-mode active pixel sensor circuits using amorphous InSnZnO thin-film transistor for 50-μm pixel-pitch indirect X-ray imagers Solid-State Electronics. 131: 53-64. DOI: 10.1016/J.Sse.2017.02.006 |
0.403 |
|
| 2017 |
Kim H, Moon J, Lee K, Kanicki J. 3D Printed Masks and Transfer Stamping Process to Enable the Fabrication of the Hemispherical Organic Photodiodes Advanced Materials Technologies. 2: 1700090. DOI: 10.1002/Admt.201700090 |
0.329 |
|
| 2016 |
Cheng MH, Zhao C, Huang CL, Kim H, Nakata M, Kanicki J. Amorphous InSnZnO Thin-Film Transistor Voltage-Mode Active Pixel Sensor Circuits for Indirect X-Ray Imagers Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2016.2615079 |
0.412 |
|
| 2016 |
Zhao C, Fung TC, Kanicki J. Half-Corbino short-channel amorphous In-Ga-Zn-O thin-film transistors with a-SiOx or a-SiOx/a-SiNx passivation layers Solid-State Electronics. 120: 25-31. DOI: 10.1016/J.Sse.2016.03.003 |
0.633 |
|
| 2016 |
Nakata M, Zhao C, Kanicki J. DC sputtered amorphous In-Sn-Zn-O thin-film transistors: Electrical properties and stability Solid-State Electronics. 116: 22-29. DOI: 10.1016/J.Sse.2015.11.025 |
0.48 |
|
| 2016 |
Assis LMN, Leones R, Kanicki J, Pawlicka A, Silva MM. Prussian blue for electrochromic devices Journal of Electroanalytical Chemistry. 777: 33-39. DOI: 10.1016/J.Jelechem.2016.05.007 |
0.31 |
|
| 2015 |
Kim SC, Kim YS, Kanicki J. Density of states of short channel amorphous In-Ga-Zn-O thin-film transistor arrays fabricated using manufacturable processes Japanese Journal of Applied Physics. 54. DOI: 10.7567/Jjap.54.051101 |
0.437 |
|
| 2015 |
Yu EKH, Zhang R, Bie L, Kuo A, Kanicki J. Dynamic response of a-InGaZnO and amorphous silicon thin-film transistors for ultra-high definition active-matrix liquid crystal displays Ieee/Osa Journal of Display Technology. 11: 471-479. DOI: 10.1109/Jdt.2015.2416209 |
0.652 |
|
| 2015 |
Prakash G, Gray JL, Lee YS, Kanicki J. Comparison of composition and atomic structure of amorphous indium gallium zinc oxide thin film transistor before and after positive bias temperature stress by transmission electron microscopy Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/5/055008 |
0.37 |
|
| 2015 |
Kim SC, Kim YS, Yu EKH, Kanicki J. Short channel amorphous In-Ga-Zn-O thin-film transistor arrays for ultra-high definition active matrix liquid crystal displays: Electrical properties and stability Solid-State Electronics. 111: 67-75. DOI: 10.1016/J.Sse.2015.05.002 |
0.456 |
|
| 2015 |
Kim H, Lee KT, Zhao C, Guo LJ, Kanicki J. Top illuminated organic photodetectors with dielectric/metal/dielectric transparent anode Organic Electronics: Physics, Materials, Applications. 20: 103-111. DOI: 10.1016/J.Orgel.2015.02.012 |
0.339 |
|
| 2015 |
Assis LMN, Sabadini RC, Santos LP, Kanicki J, Łapkowski M, Pawlicka A. Electrochromic device with Prussian blue and HPC-based electrolyte Electrochimica Acta. 182: 878-883. DOI: 10.1016/J.Electacta.2015.09.133 |
0.393 |
|
| 2014 |
Lee YS, Yu EKH, Shim DH, Kong HS, Bie L, Kanicki J. Oxygen flow effects on electrical properties, stability, and density of states of amorphous In-Ga-Zn-O thin-film transistors Japanese Journal of Applied Physics. 53. DOI: 10.7567/Jjap.53.121101 |
0.388 |
|
| 2014 |
Baek G, Bie L, Abe K, Kumomi H, Kanicki J. Electrical instability of double-gate a-IGZO TFTs with metal source/drain recessed electrodes Ieee Transactions On Electron Devices. 61: 1109-1115. DOI: 10.1109/Ted.2014.2307352 |
0.448 |
|
| 2014 |
Yu EKH, Abe K, Kumomi H, Kanicki J. AC bias-temperature stability of a-InGaZnO thin-film transistors with metal source/drain recessed electrodes Ieee Transactions On Electron Devices. 61: 806-812. DOI: 10.1109/Ted.2014.2302411 |
0.404 |
|
| 2014 |
Zhao C, Bie L, Zhang R, Kanicki J. Two-dimensional numerical simulation of bottom-gate and dual-gate amorphous in-Ga-Zn-O MESFETs Ieee Electron Device Letters. 35: 75-77. DOI: 10.1109/Led.2013.2289861 |
0.374 |
|
| 2014 |
Kim Y, Kanicki J, Lee H. An a-InGaZnO TFT pixel circuit compensating threshold voltage and mobility variations in AMOLEDs Ieee/Osa Journal of Display Technology. 10: 402-406. DOI: 10.1109/Jdt.2014.2304615 |
0.442 |
|
| 2014 |
De Andrade JR, Cesarino I, Zhang R, Kanicki J, Pawlicka A. Properties of Electrodeposited WO 3 Thin Films Molecular Crystals and Liquid Crystals. 604: 71-83. DOI: 10.1080/15421406.2014.968030 |
0.377 |
|
| 2014 |
Yu EKH, Jun S, Kim DH, Kanicki J. Density of states of amorphous In-Ga-Zn-O from electrical and optical characterization Journal of Applied Physics. 116. DOI: 10.1063/1.4898567 |
0.353 |
|
| 2014 |
Baek G, Krasnov A, Boer WD, Kanicki J. Top gate amorphous In-Ga-Zn-O thin film transistors fabricated on soda-lime-silica glass substrates Digest of Technical Papers - Sid International Symposium. 45: 1035-1038. DOI: 10.1002/j.2168-0159.2014.tb00269.x |
0.316 |
|
| 2013 |
Zhang R, Hollars DR, Kanicki J. High efficiency Cu(In,Ga)Se2 flexible solar cells fabricated by roll-to-roll metallic precursor co-sputtering method Japanese Journal of Applied Physics. 52. DOI: 10.7567/Jjap.52.092302 |
0.422 |
|
| 2013 |
Baek G, Abe K, Kumomi H, Kanicki J. Scaling of coplanar homojunction amorphous In-Ga-Zn-O thin-film transistors Japanese Journal of Applied Physics. 52. DOI: 10.7567/Jjap.52.03Bb05 |
0.389 |
|
| 2013 |
Zhang R, Bie L, Fung TC, Yu EKH, Zhao C, Kanicki J. High performance amorphous metal-oxide semiconductors thin-film passive and active pixel sensors Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/IEDM.2013.6724703 |
0.513 |
|
| 2013 |
Zhang R, Bie L, Yu E, Kanicki J. Dynamic response of amorphous In-Ga-Zn-O thin-film transistors for 8K×4K flat-panel display Device Research Conference - Conference Digest, Drc. DOI: 10.1109/DRC.2013.6633891 |
0.387 |
|
| 2013 |
Kim Y, Kanicki J, Lee H. A novel a-InGaZnO TFT based voltage programmed pixel circuit to compensate threshold voltage and mobility variations Proceedings of the 20th International Workshop On Active-Matrix Flatpanel Displays and Devices: Tft Technologies and Fpd Materials, Am-Fpd 2013. 103-106. |
0.319 |
|
| 2012 |
Baek G, Kanicki J. Modeling of current-voltage characteristics for double-gate a-IGZO TFTs and its application to AMLCDs Journal of the Society For Information Display. 20: 237-244. DOI: 10.1889/Jsid20.5.237 |
0.373 |
|
| 2012 |
Abe K, Takahashi K, Sato A, Kumomi H, Nomura K, Kamiya T, Kanicki J, Hosono H. Amorphous In-Ga-Zn-O dual-gate TFTs: Current-voltage characteristics and electrical stress instabilities Ieee Transactions On Electron Devices. 59: 1928-1935. DOI: 10.1109/Ted.2012.2195008 |
0.433 |
|
| 2012 |
Shea PB, Kanicki J. Ab initio electronic structure calculations of solid, solution-processed metallotetrabenzoporphyrins Journal of Applied Physics. 111. DOI: 10.1063/1.3699371 |
0.312 |
|
| 2012 |
Shea PB, Yamada H, Ono N, Kanicki J. Solution-processed zinc tetrabenzoporphyrin thin-films and transistors Thin Solid Films. 520: 4031-4035. DOI: 10.1016/J.Tsf.2012.01.034 |
0.454 |
|
| 2011 |
Lee H, Jung H, Choi KY, Kanicki J. Electrical stability of power efficient half corbino hydrogenated amorphous silicon thin-film transistors Japanese Journal of Applied Physics. 50. DOI: 10.1143/Jjap.50.120203 |
0.518 |
|
| 2011 |
Chen C, Cheng KC, Chagarov E, Kanicki J. Crystalline In-Ga-Zn-O density of states and energy band structure calculation using density function theory Japanese Journal of Applied Physics. 50. DOI: 10.1143/Jjap.50.091102 |
0.532 |
|
| 2011 |
Lee H, Liu CH, Kanicki J. Asymmetric electrical properties of half corbino hydrogenated amorphous silicon thin-film transistor and its applications to flat panel displays Japanese Journal of Applied Physics. 50. DOI: 10.1143/Jjap.50.074203 |
0.537 |
|
| 2011 |
Baek G, Abe K, Kuo A, Kumomi H, Kanicki J. Electrical properties and stability of dual-gate coplanar homojunction DC sputtered amorphous indium-gallium-zinc-oxide thin-film transistors and its application to AM-OLEDs Ieee Transactions On Electron Devices. 58: 4344-4353. DOI: 10.1109/Ted.2011.2168528 |
0.685 |
|
| 2011 |
Yoo G, Radtke D, Baek G, Zeitner UD, Kanicki J. Electrical instability of the a-Si:H TFTs fabricated by maskless laser-write lithography on a spherical surface Ieee Transactions On Electron Devices. 58: 160-164. DOI: 10.1109/Ted.2010.2088403 |
0.7 |
|
| 2011 |
Royer JE, Lee S, Chen C, Ahn B, Trogler WC, Kanicki J, Kummel AC. Analyte selective response in solution-deposited tetrabenzoporphyrin thin-film field-effect transistor sensors Sensors and Actuators, B: Chemical. 158: 333-339. DOI: 10.1016/J.Snb.2011.06.030 |
0.627 |
|
| 2011 |
Kuo A, Won TK, Kanicki J. Back channel etch chemistry of advanced a-Si:H TFTs Microelectronic Engineering. 88: 207-212. DOI: 10.1016/J.Mee.2010.08.001 |
0.442 |
|
| 2011 |
Lee H, Yoo JS, Kanicki J. Energy efficient a-Si:H half-Corbino TFT with enhanced electrical stability Sid Conference Record of the International Display Research Conference. 336-339. |
0.417 |
|
| 2011 |
Baek G, Kuo A, Kanicki J, Abe K, Kumomi H. Electrical properties and stability of dual-gate coplanar homojunction amorphous indium-gallium-zinc-oxide thin-film transistor 49th Annual Sid Symposium, Seminar, and Exhibition 2011, Display Week 2011. 3: 1136-1139. |
0.33 |
|
| 2011 |
Baek G, Kuo A, Kanicki J, Abe K, Kumomi H. P-11: Electrical properties and stability of dual-gate coplanar homojunction amorphous indium-gallium-zinc-oxide thin-film transistor Digest of Technical Papers - Sid International Symposium. 42: 1136-1139. |
0.387 |
|
| 2010 |
Yoo G, Lee H, Kanicki J. Electrical stability of hexagonal a-Si:H TFTs Ieee Electron Device Letters. 31: 53-55. DOI: 10.1109/LED.2009.2034760 |
0.68 |
|
| 2010 |
Chen C, Kanicki J. Surface potential study of amorphous In-Ga-Zn-O thin film transistors Journal of Applied Physics. 108. DOI: 10.1063/1.3503871 |
0.623 |
|
| 2010 |
Fung TC, Baek G, Kanicki J. Low frequency noise in long channel amorphous In-Ga-Zn-O thin film transistors Journal of Applied Physics. 108. DOI: 10.1063/1.3490193 |
0.393 |
|
| 2010 |
Yoo G, Fung Tc, Radtke D, Stumpf M, Zeitner U, Kanicki J. Hemispherical thin-film transistor passive pixel sensors Sensors and Actuators, a: Physical. 158: 280-283. DOI: 10.1016/J.Sna.2009.11.019 |
0.634 |
|
| 2010 |
Yoo G, Lee H, Radtke D, Stumpf M, Zeitner U, Kanicki J. A maskless laser-write lithography processing of thin-film transistors on a hemispherical surface Microelectronic Engineering. 87: 83-87. DOI: 10.1016/J.Mee.2009.05.032 |
0.707 |
|
| 2009 |
Chen C, Abe K, Kumomi H, Kanicki J. A-InGaZnO thin-film transistors for AMOLEDs: Electrical stability and pixel-circuit simulation Journal of the Society For Information Display. 17: 525-534. DOI: 10.1889/Jsid17.6.525 |
0.658 |
|
| 2009 |
Chen C, Abe K, Fung TC, Kumomi H, Kanicki J. Amorphous In-Ga-Zn-O thin film transistor current-scaling pixel electrode circuit for active-matrix organic light-emitting displays Japanese Journal of Applied Physics. 48. DOI: 10.1143/Jjap.48.03B025 |
0.673 |
|
| 2009 |
Chen C, Abe K, Kumomi H, Kanicki J. Density of states of a-InGaZnO from temperature-dependent field-effect studies Ieee Transactions On Electron Devices. 56: 1177-1183. DOI: 10.1109/Ted.2009.2019157 |
0.61 |
|
| 2009 |
Fung TC, Abe K, Kumomi H, Kanicki J. Electrical instability of rf sputter amorphous In-Ga-Zn-O thin-film transistors Ieee/Osa Journal of Display Technology. 5: 452-461. DOI: 10.1109/Jdt.2009.2020611 |
0.604 |
|
| 2009 |
Fung TC, Chuang CS, Chen C, Abe K, Cottle R, Townsend M, Kumomi H, Kanicki J. Two-dimensional numerical simulation of radio frequency sputter amorphous In-Ga-Zn-O thin-film transistors Journal of Applied Physics. 106. DOI: 10.1063/1.3234400 |
0.635 |
|
| 2009 |
Lee H, Yoo G, Yoo JS, Kanicki J. Asymmetric electrical properties of fork a-Si:H thin-film transistor and its application to flat panel displays Journal of Applied Physics. 105. DOI: 10.1063/1.3153968 |
0.729 |
|
| 2008 |
Kuo A, Won TK, Kanicki J. Advanced multilayer amorphous ailicon thin-film transistor structure: Film thickness effect on its electrical performance and contact resistance Japanese Journal of Applied Physics. 47: 3362-3367. DOI: 10.1143/Jjap.47.3362 |
0.701 |
|
| 2008 |
Lee H, Chiang CS, Kanicki J. Dynamic response of normal and Corbino a-Si:H TFTs for AM-OLEDs Ieee Transactions On Electron Devices. 55: 2338-2347. DOI: 10.1109/Ted.2008.928023 |
0.501 |
|
| 2008 |
Kuo A, Won TK, Kanicki J. Advanced amorphous silicon thin-film transistors for AM-OLEDs: Electrical performance and stability Ieee Transactions On Electron Devices. 55: 1621-1629. DOI: 10.1109/Ted.2008.924047 |
0.674 |
|
| 2008 |
Lee H, Yoo JS, Kim CD, Kang IB, Kanicki J. Hexagonal a-Si:H TFTs: A new advanced technology for flat-paneld displays Ieee Transactions On Electron Devices. 55: 329-336. DOI: 10.1109/TED.2007.911090 |
0.426 |
|
| 2008 |
Fung T, Chuang C, Nomura K, Shieh HD, Hosono H, Kanicki J. Photofield‐effect in amorphous In‐Ga‐Zn‐O (a‐IGZO) thin‐film transistors Journal of Information Display. 9: 21-29. DOI: 10.1080/15980316.2008.9652066 |
0.388 |
|
| 2008 |
Chen C, Abe K, Kumomi H, Kanicki J. 5.3: RF sputter a-InGaZnO thin film transistors for flat panel displays Digest of Technical Papers - Sid International Symposium. 111-115. |
0.353 |
|
| 2008 |
Fung TC, Nomura K, Hosono H, Kanicki J. PLD amorphous In-Ga-Zn-O TFTs for future optoelectronics Digest of Technical Papers - Sid International Symposium. 117-123. |
0.365 |
|
| 2008 |
Fung TC, Chuang CS, Mullins BG, Nomura K, Kamiya T, Shieh HPD, Hosono H, Kanicki J. Photofield-Effect in Amorphous InGaZnO TFTs Proceedings of International Meeting On Information Display. 8: 1208-1211. |
0.393 |
|
| 2007 |
Johnson AR, Lee SJ, Klein J, Kanicki J. Absolute photoluminescence quantum efficiency measurement of light-emitting thin films. The Review of Scientific Instruments. 78: 096101. PMID 17902976 DOI: 10.1063/1.2778614 |
0.606 |
|
| 2007 |
Yoo JS, Lee H, Kanicki J, Kim CD, Chung IJ. Novel a-Si:H TFT pixel circuit for electrically stable top-anode light-emitting AMOLEDs Journal of the Society For Information Display. 15: 545-551. DOI: 10.1889/1.2770853 |
0.467 |
|
| 2007 |
Lee H, Yoo JS, Kim CD, Chung IJ, Kanicki J. Novel current-scaling current-mirror hydrogenated amorphous silicon thin-film transistor pixel electrode circuit with cascade capacitor for active-matrix organic light-emitting devices Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 46: 1343-1349. DOI: 10.1143/Jjap.46.1343 |
0.483 |
|
| 2007 |
Lee H, Lin YC, Shieh HPD, Kanicki J. Current-scaling a-Si:H TFT pixel-electrode circuit for AM-OLEDs: Electrical properties and stability Ieee Transactions On Electron Devices. 54: 2403-2410. DOI: 10.1109/Ted.2007.902665 |
0.472 |
|
| 2007 |
Lee H, Yoo JS, Kim CD, Chung IJ, Kanicki J. Asymmetric electrical properties of Corbino a-Si:H TFT and concepts of its application to flat panel displays Ieee Transactions On Electron Devices. 54: 654-662. DOI: 10.1109/Ted.2007.891857 |
0.524 |
|
| 2007 |
Shea PB, Chen C, Kanicki J, Pattison LR, Petroff P, Yamada H, Ono N. Polycrystalline tetrabenzoporphyrin organic field-effect transistors with nanostructured channels Applied Physics Letters. 90. DOI: 10.1063/1.2745227 |
0.63 |
|
| 2007 |
Shea PB, Pattison LR, Kawano M, Chen C, Chen J, Petroff P, Martin DC, Yamada H, Ono N, Kanicki J. Solution-processed polycrystalline copper tetrabenzoporphyrin thin-film transistors Synthetic Metals. 157: 190-197. DOI: 10.1016/J.Synthmet.2007.01.013 |
0.655 |
|
| 2007 |
Lee H, Yoo JS, Kim CD, Kang I, Kanicki J. Novel pixel electrode circuits and a-Si:H TFT structures for AM-OLEDs Idmc 2007 - International Display Manufacturing Conference and Fpd Expo - Proceedings. 423-426. |
0.343 |
|
| 2007 |
Lee H, Yoo JS, Kim CD, Kang IB, Kanicki J. A-Si:H HEX-TFTs, a new technology for flat panel displays Idw '07 - Proceedings of the 14th International Display Workshops. 3: 1993-1994. |
0.34 |
|
| 2006 |
Lee H, Johnson AR, Kanicki J. White LED based on polyfluorene co-polymers blend on plastic substrate Ieee Transactions On Electron Devices. 53: 427-434. DOI: 10.1109/Ted.2005.864378 |
0.355 |
|
| 2006 |
Shea PB, Kanicki J, Pattison LR, Petroff P, Kawano M, Yamada H, Ono N. Solution-processed nickel tetrabenzoporphyrin thin-film transistors Journal of Applied Physics. 100. DOI: 10.1063/1.2220641 |
0.453 |
|
| 2006 |
Lee H, Kanicki J, Lin YC, Shieh HP. Current-scaling a-Si:H TFT pixel electrode circuit for AM-OLEDs Digest of Technical Papers - Sid International Symposium. 37: 1943-1946. |
0.384 |
|
| 2006 |
Yoo JS, Lee H, Kanicki J, Kim CD, Chung IJ. Reliability enhancement of AM-OLED with a-Si:H TFT and top-anode OLED employing a new pixel circuit Sid Conference Record of the International Display Research Conference. 406-409. |
0.34 |
|
| 2005 |
Lee H, Kanicki J. White Light-Emitting Device on Flexible Plastic Substrates The Japan Society of Applied Physics. 2005: 968-969. DOI: 10.7567/Ssdm.2005.F-8-5 |
0.379 |
|
| 2005 |
Shea PB, Kanicki J. Tetrabenzoporphyrin Organic Semiconductors for Flexible Organic Thin Film Transistors and Circuits The Japan Society of Applied Physics. 2005: 952-953. DOI: 10.7567/Ssdm.2005.F-7-1 |
0.498 |
|
| 2005 |
Kanicki J, Lee SJ, Hong Y, Su CC. Optoelectronic properties of poly(fluorene) co-polymer light-emitting devices on a plastic substrate Journal of the Society For Information Display. 13: 993-1002. DOI: 10.1889/1.2150379 |
0.571 |
|
| 2005 |
Lin YC, Shieh HPD, Su CC, Lee H, Kanicki J. A novel current-scaling a-Si:H TFTs pixel electrode circuit for active-matrix organic light-emitting displays Digest of Technical Papers - Sid International Symposium. 36: 846-849. DOI: 10.1889/1.2036579 |
0.385 |
|
| 2005 |
Shea PB, Johnson AR, Ono N, Kanicki J. Electrical properties of staggered electrode, solution-processed, polycrystalline tetrabenzoporphyrin field-effect transistors Ieee Transactions On Electron Devices. 52: 1497-1503. DOI: 10.1109/Ted.2005.850616 |
0.451 |
|
| 2005 |
Lin YC, Shieh HPD, Kanicki J. A novel current-scaling a-Si:H TFTs pixel electrode circuit for AM-OLEDs Ieee Transactions On Electron Devices. 52: 1123-1131. DOI: 10.1109/Ted.2005.848119 |
0.484 |
|
| 2005 |
Shea PB, Kanicki J, Cao Y, Ono N. Methanofullerene-coated tetrabenzoporphyrin organic field-effect transistors Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2115077 |
0.337 |
|
| 2005 |
Shea PB, Kanicki J, Ono N. Field-effect mobility of polycrystalline tetrabenzoporphyrin thin-film transistors Journal of Applied Physics. 98. DOI: 10.1063/1.1949713 |
0.418 |
|
| 2005 |
Lee SJ, Gallegos JR, Klein J, Curtis MD, Kanicki J. Poly(fluorene-oxadiazole) copolymer-based light-emitting devices on a plastic substrate Synthetic Metals. 155: 1-10. DOI: 10.1016/J.Synthmet.2005.05.018 |
0.316 |
|
| 2004 |
Hong Y, Kanicki J. Opto-electronic properties of poly (fluorene) co-polymer red light-emitting devices on flexible plastic substrate Ieee Transactions On Electron Devices. 51: 1562-1569. DOI: 10.1109/Ted.2004.835161 |
0.573 |
|
| 2004 |
Hamilton MC, Martin S, Kanicki J. Thin-film organic polymer phototransistors Ieee Transactions On Electron Devices. 51: 877-885. DOI: 10.1109/Ted.2004.829619 |
0.452 |
|
| 2004 |
Hamilton MC, Kanicki J. Organic polymer thin-film transistor photosensors Ieee Journal On Selected Topics in Quantum Electronics. 10: 840-848. DOI: 10.1109/Jstqe.2004.833972 |
0.424 |
|
| 2004 |
Hong Y, Nahm JY, Kanicki J. 100 dpi 4-a-Si:H TFTs active-matrix organic polymer light-emitting display Ieee Journal On Selected Topics in Quantum Electronics. 10: 16-25. DOI: 10.1109/Jstqe.2004.824075 |
0.771 |
|
| 2004 |
Lee SJ, Badano A, Kanicki J. Monte Carlo modeling of the light transport in polymer light-emitting devices on plastic substrates Ieee Journal On Selected Topics in Quantum Electronics. 10: 37-44. DOI: 10.1109/Jstqe.2004.824073 |
0.6 |
|
| 2004 |
Hamilton MC, Martin S, Kanicki J. Field-effect mobility of organic polymer thin-film transistors Chemistry of Materials. 16: 4699-4704. DOI: 10.1021/Cm049613R |
0.387 |
|
| 2004 |
Kinder L, Kanicki J, Petroff P. Structural ordering and enhanced carrier mobility in organic polymer thin film transistors Synthetic Metals. 146: 181-185. DOI: 10.1016/J.Synthmet.2004.06.024 |
0.403 |
|
| 2004 |
Hong Y, He Z, Lennhoff NS, Banach DA, Kanicki J. Transparent Flexible Plastic Substrates for Organic Light-Emitting Devices Journal of Electronic Materials. 33: 312-320. DOI: 10.1007/S11664-004-0137-3 |
0.578 |
|
| 2003 |
Hong Y, Nahm J, Kanicki J. 4.5: 200 dpi 4-a-Si:H TFTs Current-Driven AM-PLEDs Sid Symposium Digest of Technical Papers. 34: 22. DOI: 10.1889/1.1832197 |
0.539 |
|
| 2003 |
Kim J, Kanicki J. 4.4: 200 dpi 3-a-Si:H TFTs Voltage-Driven AM-PLEDs Sid Symposium Digest of Technical Papers. 34: 18. DOI: 10.1889/1.1832196 |
0.321 |
|
| 2003 |
Martin S, Hamilton M, Kanicki J. Organic-polymer thin-film transistors for active-matrix flat-panel displays? Journal of the Society For Information Display. 11: 543-549. DOI: 10.1889/1.1825684 |
0.301 |
|
| 2003 |
Hattori R, Kanicki J. Contact resistance in Schottky contact gated-four-probe a-Si thin-film transistor Japanese Journal of Applied Physics, Part 2: Letters. 42. DOI: 10.1143/Jjap.42.L907 |
0.467 |
|
| 2003 |
Swensen J, Kanicki J, Heeger AJ. Influence of gate dielectrics on the electrical properties of F8T2 polyfluorene thin-film transistors Proceedings of Spie - the International Society For Optical Engineering. 5217: 159-166. DOI: 10.1117/12.507630 |
0.349 |
|
| 2003 |
Hamilton MC, Martin S, Kanicki J. Organic polymer thin-film photo-transistors Proceedings of Spie - the International Society For Optical Engineering. 5217: 193-201. DOI: 10.1117/12.504867 |
0.36 |
|
| 2003 |
Martin S, Dassas L, Hamilton MC, Kanicki J. Time dependence of organic polymer thin-film transistors current Proceedings of Spie - the International Society For Optical Engineering. 5217: 7-15. DOI: 10.1117/12.504536 |
0.359 |
|
| 2003 |
Kim JH, Hong Y, Kanicki J. Amorphous silicon TFT-based active-matrix organic polymer LEDs Ieee Electron Device Letters. 24: 451-453. DOI: 10.1109/Led.2003.814999 |
0.638 |
|
| 2003 |
Hong Y, Nahm JY, Kanicki J. Optoelectrical properties of four amorphous silicon thin-film transistors 200 dpi active-matrix organic polymer light-emitting display Applied Physics Letters. 83: 3233-3235. DOI: 10.1063/1.1617372 |
0.775 |
|
| 2003 |
Hong Y, Kanicki J. Integrating sphere charge coupled device-based measurement method for organic light-emitting devices Review of Scientific Instruments. 74: 3572-3575. DOI: 10.1063/1.1581394 |
0.542 |
|
| 2003 |
Hamilton MC, Martin S, Kanicki J. Effect of Illumination on Organic Polymer Thin-Film Transistors Materials Research Society Symposium - Proceedings. 771: 333-338. |
0.358 |
|
| 2003 |
Martin S, Hamilton MC, Kanicki J. Source/drain contacts in organic polymer thin film transistors Materials Research Society Symposium - Proceedings. 771: 163-168. |
0.304 |
|
| 2002 |
Hong Y, Kanicki J, Hattori R. P-103: Novel Poly-Si TFT Pixel Electrode Circuits and Current Programmed Active-Matrix Driving Methods for AM-OLEDs Sid Symposium Digest of Technical Papers. 33: 618. DOI: 10.1889/1.1830417 |
0.507 |
|
| 2002 |
Kim J, Kanicki J. P-102: Amorphous Silicon Thin-Film Transistors-based Active-Matrix Organic Light-Emitting Displays Sid Symposium Digest of Technical Papers. 33: 614. DOI: 10.1889/1.1830416 |
0.349 |
|
| 2002 |
Kim JH, Kanicki J. Amorphous silicon thin-film transistors-based active-matrix organic light-emitting displays for medical imaging Proceedings of Spie - the International Society For Optical Engineering. 4681: 314-321. DOI: 10.1117/12.466933 |
0.416 |
|
| 2002 |
Hong Y, He Z, Lee S, Kanicki J. Air-stable organic polymer red light-emitting devices on flexible plastic substrates Proceedings of Spie - the International Society For Optical Engineering. 4464: 329-335. DOI: 10.1117/12.457492 |
0.513 |
|
| 2002 |
Hong Y, Kanicki J. Integrating sphere CCD-based measurement method of the OP-LED opto-electronic characteristics Proceedings of Spie - the International Society For Optical Engineering. 4800: 223-228. DOI: 10.1117/12.451885 |
0.463 |
|
| 2002 |
Cheng X, Hong Y, Kanicki J, Guo LJ. High-resolution organic polymer light-emitting pixels fabricated by imprinting technique Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 2877-2880. DOI: 10.1116/1.1515307 |
0.535 |
|
| 2002 |
Martin S, Nahm JY, Kanicki J. Gate-planarized organic polymer thin film transistors Journal of Electronic Materials. 31: 512-519. DOI: 10.1007/S11664-002-0108-5 |
0.715 |
|
| 2002 |
Kim JH, Lee D, Kanicki J. Amorphous silicon thin-film transistors-based active-matrix organic polymer light-emitting displays Sid Conference Record of the International Display Research Conference. 601-604. |
0.444 |
|
| 2001 |
Martin S, Chiang CS, Nahm JY, Li T, Kanicki J, Ugai Y. Influence of the amorphous silicon thickness on top gate thin-film transistor electrical performances Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 40: 530-537. DOI: 10.1143/Jjap.40.530 |
0.754 |
|
| 2001 |
He Y, Hattori R, Kanicki J. Four-thin film transistor pixel electrode circuits for active-matrix organic light-emitting displays Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 40: 1199-1208. DOI: 10.1143/Jjap.40.1199 |
0.462 |
|
| 2001 |
Kim JH, Kanicki J. Advanced amorphous silicon thin film transistor active-matrix organic light-emitting displays design for medical imaging Proceedings of Spie - the International Society For Optical Engineering. 4319: 306-318. DOI: 10.1117/12.428069 |
0.353 |
|
| 2001 |
Kanicki J, He Y, Hattori R. A-Si:H pixel electrode circuits for AM-OLEDs Proceedings of Spie - the International Society For Optical Engineering. 4295: 147-158. DOI: 10.1117/12.424869 |
0.434 |
|
| 2001 |
Hong Y, Hong Z, Kanicki J. Materials and device structures for high performance poly OLEDs on flexible plastic substrates Proceedings of Spie - the International Society For Optical Engineering. 4105: 356-361. DOI: 10.1117/12.416916 |
0.539 |
|
| 2001 |
He Y, Kanicki J. Polyfluorene light emitting devices on flexible plastic substrates Proceedings of Spie - the International Society For Optical Engineering. 4105: 143-151. DOI: 10.1117/12.416887 |
0.319 |
|
| 2001 |
He Y, Hattori R, Kanicki J. Improved a-Si:H TFT pixel electrode circuits for active-matrix organic light emitting displays Ieee Transactions On Electron Devices. 48: 1322-1325. DOI: 10.1109/16.930646 |
0.451 |
|
| 2001 |
Badano A, Kanicki J. Monte Carlo analysis of the spectral photon emission and extraction efficiency of organic light-emitting devices Journal of Applied Physics. 90: 1827-1830. DOI: 10.1063/1.1385571 |
0.338 |
|
| 2001 |
Kim JH, Kanicki J. Two photo-mask fully self-aligned Al bottom-gate a-Si:H TFTs Sid Conference Record of the International Display Research Conference. 439-442. |
0.384 |
|
| 2001 |
Gallezot JD, Martin S, Kanicki J. Photosensitivity of a-Si:H TFTs Sid Conference Record of the International Display Research Conference. 407-410. |
0.403 |
|
| 2001 |
Kanicki J, Kim JH, Nahm JY, He Y, Hattori R. Amorphous silicon thin-film transistors base active-matrix organic light-emitting displays Sid Conference Record of the International Display Research Conference. 315-318. |
0.73 |
|
| 2000 |
Nahm JY, Lan JH, Kanicki J. High-voltage hydrogenated amorphous silicon thin-film transistor for reflective active-matrix cholesteric LCD Materials Research Society Symposium - Proceedings. 558: 125-128. DOI: 10.1557/Proc-558-125 |
0.755 |
|
| 2000 |
He Y, Hattori R, Kanicki J. Current-source a-Si:H thin-film transistor circuit for active-matrix organic light-emitting displays Ieee Electron Device Letters. 21: 590-592. DOI: 10.1109/55.887475 |
0.503 |
|
| 2000 |
Li T, Kanicki J, Kong W, Terry FL. Interference fringe-free transmission spectroscopy of amorphous thin films Journal of Applied Physics. 88: 5764-5771. DOI: 10.1063/1.1290732 |
0.405 |
|
| 2000 |
He Y, Kanicki J. High-efficiency organic polymer light-emitting heterostructure devices on flexible plastic substrates Applied Physics Letters. 76: 661-663. DOI: 10.1063/1.125854 |
0.366 |
|
| 2000 |
He Y, Hattori R, Kanicki J. Light output measurements of the organic light-emitting devices Review of Scientific Instruments. 71: 2104-2107. DOI: 10.1063/1.1150588 |
0.319 |
|
| 2000 |
He Y, Hattori R, Kanicki J. Electrical reliability of two- and four- a-Si:H TFT pixel electrode circuits for active-matrix OLEDs Sid Conference Record of the International Display Research Conference. 354-357. |
0.363 |
|
| 2000 |
Martin S, Feillens Y, Kanicki J. Five-terminal thin-film transistor structure Sid Conference Record of the International Display Research Conference. 127-130. |
0.363 |
|
| 2000 |
Martin S, Nahm JY, Kim J, Kanicki J. Many-body universal approach to a-Si:H TFTs electrical instabilities Sid Conference Record of the International Display Research Conference. 423-426. |
0.68 |
|
| 2000 |
Kim JH, Moyer ES, Chung K, Kanicki J. Gate planarized a-Si:H TFTs with the silicon-based flowable oxide Sid Conference Record of the International Display Research Conference. 443-446. |
0.387 |
|
| 2000 |
Hattorl R, Tsukamizu T, Tsuchiya R, Miyake K, Yi HE, Kanicki J. Current-writing active-matrix circuit for organic light-emitting diode display using a-Si:H thin-film-transistors Ieice Transactions On Electronics. 779-782. |
0.41 |
|
| 1999 |
Flynn MJ, Kanicki J, Badano A, Eyler WR. High-fidelity electronic display of digital radiographs Radiographics. 19: 1653-1669. PMID 10555680 DOI: 10.1148/Radiographics.19.6.G99No081653 |
0.335 |
|
| 1999 |
Gong S, Kanicki J, Lan MA, Zhong JZZ. Ultraviolet-light induced liquid-crystal alignment on polyimide films Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 38: 5996-6004. DOI: 10.1143/Jjap.38.5996 |
0.387 |
|
| 1999 |
Chou TKA, Kanicki J. Two-dimensional numerical simulation of solid-phase-crystallized polysilicon thin-film transistor characteristics Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 38: 2251-2255. DOI: 10.1143/Jjap.38.2251 |
0.446 |
|
| 1999 |
Min BH, Kanicki J. Electrical characteristics of new LDD poly-Si TFT structure tolerant to process misalignment Ieee Electron Device Letters. 20: 335-337. DOI: 10.1109/55.772368 |
0.444 |
|
| 1999 |
Lan JH, Kanicki J. Planarized Copper Gate Hydrogenated Amorphous-Silicon Thin-Film Transistors for AM-LCD's Ieee Electron Device Letters. 20: 129-131. DOI: 10.1109/55.748910 |
0.499 |
|
| 1999 |
Li T, Kanicki J. Microstructure characterization of amorphous thin solid films in a fringe-free environment Journal of Applied Physics. 85: 388-396. DOI: 10.1063/1.369460 |
0.394 |
|
| 1999 |
He Y, Gong S, Hattori R, Kanicki J. High performance organic polymer light-emitting heterostructure devices Applied Physics Letters. 74: 2265-2267. DOI: 10.1063/1.123862 |
0.333 |
|
| 1999 |
Li T, Kanicki J, Mohler C. Method of collecting pure vibrational absorption spectra of amorphous thin films Thin Solid Films. 349: 285-288. DOI: 10.1016/S0040-6090(99)00193-5 |
0.352 |
|
| 1999 |
Hatalis MK, Kouvatsos DN, Kung JH, Voutsas AT, Kanicki J. Thin film transistors in low temperature as-deposited and reduced-crystallization-time polysilicon on 665°C strain point glass substrates Thin Solid Films. 338: 281-285. DOI: 10.1016/S0040-6090(98)01075-X |
0.439 |
|
| 1999 |
Nahm JY, Lan JH, Kanicki J. Hydrogenated amorphous-silicon thin-film transistor structure with the buried field plate Technical Digest - International Electron Devices Meeting. 309-312. |
0.731 |
|
| 1999 |
Hatalis MK, Kouvatsos DN, Kung JH, Voutsas AT, Kanicki J. Thin film transistors in low temperature as-deposited and reduced-crystallization-time polysilicon on 665°C strain point glass substrates Thin Solid Films. 338: 281-285. |
0.331 |
|
| 1998 |
Gong S, Kanicki J, Ma L, Zhong JZZ. Effects of Ultraviolet-Light on Polyimide Films for Liquid Crystal Alignment Mrs Proceedings. 508. DOI: 10.1557/Proc-508-229 |
0.39 |
|
| 1998 |
Li T, Kanicki J. Longitudinal Vibrational Absorption Modes of Hydrogenated Amorphous Silicon Nitride Thin Films Mrs Proceedings. 507. DOI: 10.1557/Proc-507-535 |
0.387 |
|
| 1998 |
Chiang CS, Martin S, Kanicki J, Ugai Y, Yukawa T, Takeuchi S. Top-gate staggered amorphous silicon thin-film transistors: Series resistance and nitride thickness effects Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 37: 5914-5920. DOI: 10.1143/Jjap.37.5914 |
0.505 |
|
| 1998 |
Chiang CS, Kanicki J, Takechi K. Electrical instability of hydrogenated amorphous silicon thin-film transistors for active-matrix liquid-crystal displays Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 37: 4704-4710. DOI: 10.1143/Jjap.37.4704 |
0.47 |
|
| 1998 |
Xu G, Abileah A, Jones M, Brinkley R, Thomsen S, Gong S, Kanicki J. Viewing angle improvement with compensation films for LCDs Proceedings of Spie - the International Society For Optical Engineering. 3560: 24-32. DOI: 10.1117/12.319688 |
0.374 |
|
| 1998 |
Lan JH, Kanicki J. Planarization technology of a-Si:H TFTs for AM-LCDs Proceedings of Spie - the International Society For Optical Engineering. 3421: 170-182. DOI: 10.1117/12.311061 |
0.368 |
|
| 1998 |
Chiang CS, Chen CY, Kanicki J. Schottky-contact gated-four-probe a-Si:H TFT structure: A new structure to investigate the electrical instability of a-Si:H TFT Ieee Electron Device Letters. 19: 382-384. DOI: 10.1109/55.720193 |
0.48 |
|
| 1998 |
Li T, Kanicki J. Observation of incident angle dependent phonon absorption in hydrogenated amorphous silicon nitride thin films Applied Physics Letters. 73: 3866-3868. DOI: 10.1063/1.122919 |
0.373 |
|
| 1998 |
Chiang CS, Chen CY, Kanicki J, Takechi K. Investigation of intrinsic channel characteristics of hydrogenated amorphous silicon thin-film transistors by gated-four-probe structure Applied Physics Letters. 72: 2874-2876. DOI: 10.1063/1.121484 |
0.475 |
|
| 1998 |
Chen CY, Kanicki J. Origin of series resistances in a-Si:H TFTs Solid-State Electronics. 42: 705-713. DOI: 10.1016/S0038-1101(97)00188-3 |
0.447 |
|
| 1997 |
Lan J, Chou T, Chiang C, Kanicki J. Electrical and Optical Properties of Low Dielectric Constant Planarization Polymer for High-Aperture-Ratio a-Si:H TFT-LCDs Mrs Proceedings. 471. DOI: 10.1557/Proc-471-27 |
0.477 |
|
| 1997 |
Min B, Kanicki J. Electrical Characteristics of New LDD Poly-Si TFT with MIS-Alignment Tolerant Structure for AMLCDs Mrs Proceedings. 471. DOI: 10.1557/Proc-471-137 |
0.445 |
|
| 1997 |
Kim J, Kanicki J, den Boer W. Aluminum Gate Metallization for AMLCDs Mrs Proceedings. 471. DOI: 10.1557/Proc-471-111 |
0.483 |
|
| 1997 |
Chen CY, Kanicki J. Gated-four-probe TFT structure: A new technique to measure the intrinsic performance of a-Si:H TFT Proceedings of Spie - the International Society For Optical Engineering. 3014: 70-77. DOI: 10.1117/12.270279 |
0.482 |
|
| 1997 |
Chen CY, Kanicki J. Gated-four-probe a-Si:H TFT structure: A new technique to measure the intrinsic performance of a-Si:H TFT Ieee Electron Device Letters. 18: 340-342. DOI: 10.1109/55.596930 |
0.48 |
|
| 1997 |
He Y, Politis JK, Cheng H, David Curtis M, Kanicki J. Characterization and stability of light-emitting diodes based on poly(bithiazole)'s Ieee Transactions On Electron Devices. 44: 1282-1288. DOI: 10.1109/16.605469 |
0.366 |
|
| 1997 |
Lan JH, Kanicki J. ITO surface ball formation induced by atomic hydrogen in PECVD and HW-CVD tools Thin Solid Films. 304: 123-129. DOI: 10.1016/S0040-6090(97)00173-9 |
0.43 |
|
| 1996 |
Chen C, Kanicki J. Influence Of The Density of States and Series Resistance on the Field-Effect Activation Energy in a-Si:H TFT Mrs Proceedings. 424. DOI: 10.1557/Proc-424-77 |
0.445 |
|
| 1996 |
Li T, Chen C, Malone CT, Kanicki J. High-Rate Deposited Amorphous Silicon Nitride for the Hydrogenated Amorphous Silicon Thin-Film Transistor Structures Mrs Proceedings. 424. DOI: 10.1557/Proc-424-43 |
0.475 |
|
| 1996 |
Lan J, Kanicki J. Atomic Hydrogen Effects on the Optical and Electrical Properties of Transparent Conducting Oxides For a-Si:H TFT-LCDs Mrs Proceedings. 424. DOI: 10.1557/Proc-424-347 |
0.417 |
|
| 1996 |
Warren WL, Seager CH, Robertson J, Kanicki J, Poindexter EH. Creation and properties of nitrogen dangling bond defects in silicon nitride thin films Journal of the Electrochemical Society. 143: 3685-3691. DOI: 10.1149/1.1837272 |
0.454 |
|
| 1996 |
Chen CY, Kanicki J. High field-effect-mobility a-Si:H TFT based on high deposition-rate PECVD materials Ieee Electron Device Letters. 17: 437-439. DOI: 10.1109/55.536285 |
0.452 |
|
| 1996 |
Lu J, Deshpande SV, Gulari E, Kanicki J, Warren WL. Ultraviolet light induced changes in polyimide liquid-crystal alignment films Journal of Applied Physics. 80: 5028-5034. DOI: 10.1063/1.363467 |
0.413 |
|
| 1996 |
Yu S, Gulari E, Kanicki J. Selective deposition of polycrystalline silicon thin films at low temperature by hot-wire chemical vapor deposition Applied Physics Letters. 68: 2681-2683. DOI: 10.1063/1.116280 |
0.41 |
|
| 1996 |
Warren WL, Kanicki J, Poindexter EH. Paramagnetic point defects in silicon nitride and silicon oxynitride thin films on silicon Colloids and Surfaces a: Physicochemical and Engineering Aspects. 115: 311-317. DOI: 10.1016/0927-7757(96)03595-9 |
0.368 |
|
| 1996 |
Zelikson M, Weiser K, Kanicki J. Study of sub-bandgap photo-induced absorption in a-Si:H using excitation spectroscopy in a waveguide configuration Journal of Non-Crystalline Solids. 198: 259-262. DOI: 10.1016/0022-3093(95)00706-7 |
0.387 |
|
| 1996 |
Zelikson M, Weiser K, Chack A, Kanicki J. Direct determination of the quadratic electro-optic coefficient in an a-Si:H based waveguide Journal of Non-Crystalline Solids. 198: 107-110. DOI: 10.1016/0022-3093(95)00654-0 |
0.392 |
|
| 1996 |
Lan JH, Kanicki J, Catalano A, Keane J, Den Boer W, Gu T. Patterning of transparent conducting oxide thin films by wet etching for a-Si:H TFT-LCDs Journal of Electronic Materials. 25: 1806-1817. DOI: 10.1007/Bf02657158 |
0.475 |
|
| 1996 |
Chen CY, Kanicki J. High-performance a-Si: H TFT for large-area AMLCDs European Solid-State Device Research Conference. 1023-1031. |
0.385 |
|
| 1995 |
Yu S, Gulari E, Kanicki J. Selective Deposition of Polycrystalline Silicon Thin Films by Hot-Wire CVD Mrs Proceedings. 403. DOI: 10.1557/Proc-403-411 |
0.433 |
|
| 1995 |
Yu S, Deshpande S, Gulari E, Kanicki J. Low Temperature Deposition of Polycrystalline Silicon thin Films by Hot-Wire CVD Mrs Proceedings. 377. DOI: 10.1557/Proc-377-69 |
0.449 |
|
| 1995 |
Warren WL, Seager CH, Kanicki J, Crowder MS, Sigari E. Ultraviolet light induced annihilation of silicon dangling bonds in hydrogenated amorphous silicon nitride films Journal of Applied Physics. 77: 5730-5735. DOI: 10.1063/1.359593 |
0.47 |
|
| 1995 |
Robertson J, Warren W, Kanicki J. Nature of the Si and N dangling bonds in silicon nitride Journal of Non-Crystalline Solids. 187: 297-300. DOI: 10.1016/0022-3093(95)00153-0 |
0.381 |
|
| 1995 |
Chen D, Viner JM, Taylor PC, Kanicki J. Photoluminescence and electron spin resonance in nitrogen-rich amorphous silicon nitride Journal of Non-Crystalline Solids. 182: 103-108. DOI: 10.1016/0022-3093(94)00579-6 |
0.413 |
|
| 1995 |
Li T, Kanicki J, Fitzner M, Warren WL. Investigation of hydrogen evolution and dangling bonds creation mechanism in amorphous silicon nitride thin films Proceedings of the International Workshop On Active Matrix Liquid Crystal Displays, Amlcds. 129-132. |
0.345 |
|
| 1994 |
Chen D, Viner JM, Taylor PC, Kanicki JZ. Photobleaching of PL and temperature dependence of ESR in nitrogen-rich amorphous silicon nitride films Materials Research Society Symposium Proceedings. 336: 619-624. |
0.306 |
|
| 1993 |
Warren WL, Kanicki J, Robertson J, Poindexter EH. Paramagnetic nitrogen defects in silicon nitride Materials Research Society Symposium Proceedings. 284: 101-105. DOI: 10.1557/Proc-284-101 |
0.447 |
|
| 1993 |
Warren WL, Kanicki J, Robertson J, Poindexter EH, McWhorter PJ. Electron paramagnetic resonance investigation of charge trapping centers in amorphous silicon nitride films Journal of Applied Physics. 74: 4034-4046. DOI: 10.1063/1.355315 |
0.478 |
|
| 1993 |
Warren WL, Robertson J, Kanicki J. Si and N dangling bond creation in silicon nitride thin films Applied Physics Letters. 63: 2685-2687. DOI: 10.1063/1.110420 |
0.411 |
|
| 1993 |
Libsch FR, Kanicki J. Bias-stress-induced stretched-exponential time dependence of charge injection and trapping in amorphous thin-film transistors Applied Physics Letters. 62: 1286-1288. DOI: 10.1063/1.108709 |
0.399 |
|
| 1993 |
Godet C, Kanicki J. Photocreation and photobleaching of a-Si N1.6:H/c-Si interface states studied by photocapacitance transient spectroscopy Physica B: Condensed Matter. 185: 542-545. DOI: 10.1016/0921-4526(93)90292-E |
0.41 |
|
| 1993 |
Kanicki J, Warren WL. Defects in amorphous hydrogenated silicon nitride films Journal of Non-Crystalline Solids. 164: 1055-1060. DOI: 10.1016/0022-3093(93)91180-B |
0.462 |
|
| 1993 |
Seager CH, Kanicki J. Effect of UV light on IR absorption in chemically vapor deposited a-SiNx:H films Materials Research Society Symposium Proceedings. 284: 89-94. |
0.315 |
|
| 1992 |
Seager CH, Kanicki J. Near-ir absorption in chemically vapor deposited a-SiNx:H films. Physical Review B. 46: 15163-15168. PMID 10003631 DOI: 10.1103/Physrevb.46.15163 |
0.377 |
|
| 1992 |
Libsch FR, Kanicki J. Bias-Stress-Induced Stretched-Exponential Time Dependence of Charge Injection and Trapping in Amorphous Silicon Thin-Film Transistors The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.1992.Pa2-8 |
0.439 |
|
| 1992 |
Kanicki J, Warren WL, Poindexter EH. Nitrogen dangling bonds in hydrogenated amorphous silicon nitride thin films The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.1992.Pa2-4 |
0.419 |
|
| 1992 |
Kanicki J, Hatalis MK. A Simple Polysilicon Thin Film Transistor Structure for Achieving High On/Off Current Ratio Independent of Gate Bias The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.1992.B-1-3 |
0.447 |
|
| 1992 |
Kung J, Hatalis MK, Kanicki J. Performance of Polycrystalline Silicon Thin Film Transistors with Double Layer Gate Dielectric Mrs Proceedings. 284. DOI: 10.1557/Proc-284-431 |
0.488 |
|
| 1992 |
Fitzner M, Abelson J, Kanicki J. Investigation of Hydrogen and Nitrogen Thermal Stability in PECVD a-Sinx:H. Mrs Proceedings. 258. DOI: 10.1557/Proc-258-649 |
0.423 |
|
| 1992 |
Jeng SJ, Kotecki DE, Kanicki J, Parks CC, Tien J. Structure, Characteristics, and the Application of Phosphorus Doped Hydrogenated Microcrystalline Silicon Mrs Proceedings. 242. DOI: 10.1557/Proc-242-693 |
0.495 |
|
| 1992 |
Warren WL, Kanicki J, Rong FC, Buchwald WR, Harmatz M. Optically Induced Paramagnetism in Amorphous Hydrogenated Silicon Nitride Thin Films Mrs Proceedings. 242. DOI: 10.1557/Proc-242-687 |
0.474 |
|
| 1992 |
Warren WL, Kanicki J, Rong FC, Poindexter EH. Paramagnetic point defects in amorphous silicon dioxide and amorphous silicon nitride thin films Journal of the Electrochemical Society. 139: 880-889. DOI: 10.1149/1.2069319 |
0.455 |
|
| 1992 |
Hatalis M, Kung J, Kanicki J. Hydrogenation effects on polysilicon thin-film transistor structures Ieee Transactions On Electron Devices. 39: 2665. DOI: 10.1109/16.163533 |
0.305 |
|
| 1992 |
Godet C, Kanicki J, Gelatos AV. Some electrical properties of amorphous silicon/amorphous silicon nitride interfaces: Top nitride and bottom nitride configurations in MNS and TFT devices Journal of Applied Physics. 71: 5022-5032. DOI: 10.1063/1.350603 |
0.428 |
|
| 1992 |
Zelikson M, Salzman J, Weiser K, Kanicki J. Enhanced electro-optic effect in amorphous hydrogenated silicon based waveguides Applied Physics Letters. 61: 1664-1666. DOI: 10.1063/1.108444 |
0.397 |
|
| 1992 |
Warren WL, Kanicki J, Rong FC, Poindexter EH, McWhorter PJ. Charge trapping centers in N-rich silicon nitride thin films Applied Physics Letters. 61: 216-218. DOI: 10.1063/1.108222 |
0.461 |
|
| 1992 |
Kung J, Hatalis MK, Kanicki J. Investigations on the quality of polysilicon film-gate dielectric interface in polysilicon thin film transistors Thin Solid Films. 216: 137-141. DOI: 10.1016/0040-6090(92)90883-D |
0.459 |
|
| 1991 |
Kanicki J, Godet C, Gelatos AV. Bias Stress Induced Instabilities in Amorphous Silicon Nitride / Crystalline Silicon and Amorphous Silicon Nitride / Amorphous Silicon Structures Mrs Proceedings. 219. DOI: 10.1557/Proc-219-45 |
0.401 |
|
| 1991 |
Kanicki J, Sankaran M. Influence of the Gate Bias and Temperature on Positive Charge Generation in TFT Gate-Quality Amorphous Silicon Nitride Films Mrs Proceedings. 219. DOI: 10.1557/Proc-219-363 |
0.46 |
|
| 1991 |
Tober ED, Sigari E, Kanicki J, Crowder MS. Thermal Annealing of Light-Induced K Centers in Hydrogenated Amorphous Silicon Nitride Mrs Proceedings. 219. DOI: 10.1557/Proc-219-129 |
0.418 |
|
| 1991 |
Warren WL, Rong FC, Poindexter EH, Gerardi GJ, Kanicki J. Structural identification of the silicon and nitrogen dangling‐bond centers in amorphous silicon nitride Journal of Applied Physics. 70: 346-354. DOI: 10.1063/1.350280 |
0.343 |
|
| 1991 |
Warren WL, Lenahan PM, Kanicki J. Electrically neutral nitrogen dangling-bond defects in amorphous hydrogenated silicon nitride thin films Journal of Applied Physics. 70: 2220-2225. DOI: 10.1063/1.349433 |
0.466 |
|
| 1991 |
Kanicki J, Libsch FR, Griffith J, Polastre R. Performance of thin hydrogenated amorphous silicon thin‐film transistors Journal of Applied Physics. 69: 2339-2345. DOI: 10.1063/1.348716 |
0.427 |
|
| 1991 |
Tober ED, Kanicki J, Crowder MS. Thermal annealing of light-induced metastable defects in hydrogenated amorphous silicon nitride Applied Physics Letters. 59: 1723-1725. DOI: 10.1063/1.106230 |
0.413 |
|
| 1991 |
Warren WL, Kanicki J, Robertson J, Lenahan PM. Energy level of the nitrogen dangling bond in amorphous silicon nitride Applied Physics Letters. 59: 1699-1701. DOI: 10.1063/1.106222 |
0.331 |
|
| 1991 |
Zelikson M, Weiser K, Salzman J, Kanicki J. Threshold and saturation effects for photosignals in an amorphous silicon waveguide structure Applied Physics Letters. 59: 2660-2662. DOI: 10.1063/1.105931 |
0.486 |
|
| 1991 |
Jeng SJ, Kotecki DE, Kanicki J, Parks CC, Tien J. Structure, properties, and thermal stability ofinsituphosphorus‐doped hydrogenated microcrystalline silicon prepared by plasma‐enhanced chemical vapor deposition Applied Physics Letters. 58: 1632-1634. DOI: 10.1063/1.105148 |
0.428 |
|
| 1991 |
Warren WL, Rong FC, Poindexter EH, Kanicki J, Gerardi GJ. Low‐temperature electron spin resonance investigations of silicon paramagnetic defects in silicon nitride Applied Physics Letters. 58: 2417-2419. DOI: 10.1063/1.104889 |
0.419 |
|
| 1991 |
Godet C, Kanicki J, Gelatos A. Transient photocapacitance and capacitance studies of interface and bulk states in metal / a-SiN1.6: H / a-Si:H / c-Si devices Journal of Non-Crystalline Solids. 1051-1054. DOI: 10.1016/S0022-3093(05)80302-3 |
0.401 |
|
| 1991 |
Zelikson M, Weiser K, Salzman J, Kanicki J. Determination of electron and hole mobilities in an a-Si:H from photo-electric effects in a waveguide structure Journal of Non-Crystalline Solids. 137: 455-458. DOI: 10.1016/S0022-3093(05)80153-X |
0.387 |
|
| 1991 |
Kanicki J, Warren WL, Seager CH, Crowder MS, Lenahan PM. Microscopic origin of the light-induced defects in hydrogenated nitrogen-rich amorphous silicon nitride films Journal of Non-Crystalline Solids. 291-294. DOI: 10.1016/S0022-3093(05)80113-9 |
0.449 |
|
| 1990 |
Kanicki J, Sankaran M. The Generation and Bleaching of Positive Charge in Gate-Quality Nitrogen-Rich Amorphous Silicon Nitride By Sub-Bandgap Illumination Mrs Proceedings. 192. DOI: 10.1557/Proc-192-731 |
0.425 |
|
| 1990 |
Hatalis MK, Kung J, Kanicki J, Bright AA. Effect of Gate Dielectric on Performance of Polysilicon thin Film Transistors Mrs Proceedings. 182. DOI: 10.1557/Proc-182-357 |
0.492 |
|
| 1990 |
Kanicki J, Sankaran M, Gelatos A, Crowder MS, Tober ED. Stretched exponential illumination time dependence of positive charge and spin generation in amorphous silicon nitride Applied Physics Letters. 57: 698-700. DOI: 10.1063/1.104255 |
0.394 |
|
| 1990 |
Crowder MS, Tober ED, Kanicki J. Photobleaching of light-induced paramagnetic defects in amorphous silicon nitride films Applied Physics Letters. 57: 1995-1997. DOI: 10.1063/1.104151 |
0.433 |
|
| 1990 |
Seager CH, Kanicki J. Photodarkening and bleaching in amorphous silicon nitride Applied Physics Letters. 57: 1378-1380. DOI: 10.1063/1.104089 |
0.43 |
|
| 1990 |
Gelatos AV, Kanicki J. Bias stress‐induced instabilities in amorphous silicon nitride/hydrogenated amorphous silicon structures: Is the ‘‘carrier‐induced defect creation’’ model correct? Applied Physics Letters. 57: 1197-1199. DOI: 10.1063/1.103484 |
0.385 |
|
| 1990 |
Gelatos AV, Kanicki J. Direct observation of the silicon nitride on amorphous silicon interface states Applied Physics Letters. 56: 940-942. DOI: 10.1063/1.103271 |
0.403 |
|
| 1990 |
Curry SE, Lenahan PM, Krick DT, Kanicki J, Kirk CT. Evidence for a negative electron‐electron correlation energy in the dominant deep trapping center in silicon nitride films Applied Physics Letters. 56: 1359-1361. DOI: 10.1063/1.102514 |
0.48 |
|
| 1989 |
Kotecki DE, Jeng SJ, Kanicki J, Parks CC, Rausch W, Seshan K, Tien J. Correlations Between Optical, Electrical, and Structural Properties of In-Situ Phosphorus-Doped Hydrogenated Microcrystalline Silicon - Effects of Rapid Thermal Annealing on Material Properties Mrs Proceedings. 164. DOI: 10.1557/Proc-164-353 |
0.488 |
|
| 1989 |
Gelatos AV, Kanicki J. Investigation of the Silicon Nitride on Hydrogenated Amorphous Silicon Interface Mrs Proceedings. 149. DOI: 10.1557/Proc-149-729 |
0.441 |
|
| 1989 |
Kanicki J, Hasan E, Griffith J, Takamori T, Tsang JC. Properties of High Conductivity Phosphorous Doped Hydrogenated Microcrystalline Silicon and Application in Thin Film Transistor Technology Mrs Proceedings. 149. DOI: 10.1557/Proc-149-239 |
0.515 |
|
| 1989 |
Kanicki J, Hasan E, Kotecki DF, Takamori T, Griffith JH. Properties and Application of Undoped Hydrogenated Microcrystalline Silicon Thin Films Mrs Proceedings. 149. DOI: 10.1557/Proc-149-173 |
0.456 |
|
| 1989 |
Kanicki J, Jousse D. Spatial charge distribution in as-deposited and UV-illuminated gate-quality nitrogen-rich silicon nitride Ieee Electron Device Letters. 10: 277-279. DOI: 10.1109/55.31745 |
0.418 |
|
| 1989 |
Lau WS, Fonash SJ, Kanicki J. Stability of electrical properties of nitrogen-rich, silicon-rich, and stoichiometric silicon nitride films Journal of Applied Physics. 66: 2765-2767. DOI: 10.1063/1.344202 |
0.53 |
|
| 1989 |
Lustig N, Kanicki J. Gate dielectric and contact effects in hydrogenated amorphous silicon‐silicon nitride thin‐film transistors Journal of Applied Physics. 65: 3951-3957. DOI: 10.1063/1.343361 |
0.414 |
|
| 1989 |
Jousse D, Kanicki J. Investigation of the light‐induced effects in nitrogen‐rich silicon nitride films Applied Physics Letters. 55: 1112-1114. DOI: 10.1063/1.101673 |
0.413 |
|
| 1989 |
Jousse D, Kanicki J, Stathis JH. Observation of multiple silicon dangling bond configurations in silicon nitride Applied Physics Letters. 54: 1043-1045. DOI: 10.1063/1.101558 |
0.351 |
|
| 1989 |
Kanicki J, Hug S. Spatial charge distribution in the plasma-enhanced chemical vapor deposited nitrogen-rich silicon nitride Applied Physics Letters. 54: 733-735. DOI: 10.1063/1.100876 |
0.481 |
|
| 1989 |
Jousse D, Kanicki J, Stathis J. Electron spin resonance study of metal-nitride-silicon structures: Observation of Si dangling bonds with different configurations and trapping properties in silicon nitride Applied Surface Science. 39: 412-419. DOI: 10.1016/0169-4332(89)90458-3 |
0.404 |
|
| 1989 |
Lenahan PM, Krick DT, Kanicki J. The nature of the dominant deep trap in amorphous silicon nitride films: Evidence for a negative correlation energy Applied Surface Science. 39: 392-405. DOI: 10.1016/0169-4332(89)90456-X |
0.405 |
|
| 1989 |
Kanicki J, Jousse D, Gelatos A, Crowder M. Light-induced effects in hydrogenated amorphous nitrogen-rich silicon nitride films Journal of Non-Crystalline Solids. 114: 612-614. DOI: 10.1016/0022-3093(89)90666-2 |
0.422 |
|
| 1988 |
Kanicki J. Role of Hydrogen in Silicon Nitride Films Prepared by Various Deposition Techniques Mrs Proceedings. 118. DOI: 10.1557/Proc-118-671 |
0.454 |
|
| 1988 |
Lustig N, Kanicki J, Wisnieff R, Griffith J. Temperature Dependent Characteristics of Hydrogenated Amorphous Silicon thin film Transistors Mrs Proceedings. 118. DOI: 10.1557/Proc-118-267 |
0.469 |
|
| 1988 |
Krick DT, Lenahan PM, Kanicki J. Nature of the dominant deep trap in amorphous silicon nitride Physical Review B. 38: 8226-8229. DOI: 10.1103/Physrevb.38.8226 |
0.426 |
|
| 1988 |
Jousse D, Kanicki J, Krick DT, Lenahan PM. Electron-spin-resonance study of defects in plasma-enhanced chemical vapor deposited silicon nitride Applied Physics Letters. 52: 445-447. DOI: 10.1063/1.99438 |
0.427 |
|
| 1988 |
Krick DT, Lenahan PM, Kanicki J. Electrically active point defects in amorphous silicon nitride: An illumination and charge injection study Journal of Applied Physics. 64: 3558-3563. DOI: 10.1063/1.341499 |
0.438 |
|
| 1988 |
Kanicki J. Contact resistance to undoped and phosphorus‐doped hydrogenated amorphous silicon films Applied Physics Letters. 53: 1943-1945. DOI: 10.1063/1.100330 |
0.412 |
|
| 1987 |
Kanicki J. Metal / Hydrogenated Amorphous Silicon Interfaces Mrs Proceedings. 95. DOI: 10.1557/Proc-95-399 |
0.43 |
|
| 1987 |
Krick DT, Lenahan PM, Kanicki J. Stable photoinduced paramagnetic defects in hydrogenated amorphous silicon nitride Applied Physics Letters. 51: 608-610. DOI: 10.1063/1.98362 |
0.43 |
|
| 1986 |
Kanicki J, Bullock D. Ohmic and Quasi-Ohmic Contacts to Hydrogenated Amorphous Silicon Thin Films Mrs Proceedings. 70. DOI: 10.1557/Proc-70-379 |
0.42 |
|
| 1986 |
Kanicki J, Voke N. Chemical and Mechanical Properties of Hydrogenated Amorphous Silicon Nitride Films Deposited in Various PECVD Systems Mrs Proceedings. 68. DOI: 10.1557/Proc-68-167 |
0.425 |
|
| 1985 |
Kanicki J. Minority Carrier Injection and Series Resistance Effects in Hydrogenated Amorphous Silicon Schottky Barrier Diodes Mrs Proceedings. 49. DOI: 10.1557/Proc-49-101 |
0.461 |
|
| 1985 |
Kanicki J, Scott BA, Inushima T, Brodsky MH. Optical, electrical and contact properties of homoCVD a-Si:H films Journal of Non-Crystalline Solids. 789-792. DOI: 10.1016/0022-3093(85)90778-1 |
0.502 |
|
| 1984 |
Kanicki J, Fedorko P. Electrical and photovoltaic properties of trans-polyacetylene Journal of Physics D: Applied Physics. 17: 805-817. DOI: 10.1088/0022-3727/17/4/020 |
0.388 |
|
| 1984 |
Fedorko P, Kanicki J. Electrical and photovoltaic properties of metal contacts to trans-polyacetylene Thin Solid Films. 113: 1-14. DOI: 10.1016/0040-6090(84)90383-3 |
0.351 |
|
| 1984 |
Kanicki J, Ransom C, Bauhofer W, Chappell T, Scott B. Transport properties and defect states of a-Si:H grown by HOMOCVD Journal of Non-Crystalline Solids. 66: 51-58. DOI: 10.1016/0022-3093(84)90297-7 |
0.462 |
|
| 1984 |
Donckt EV, Kanicki J, Fedorko P. Electrical and photovoltaic properties of Pb/trans- (CH)x and Pb/[CH(AsF5)y]x schottky barriers Journal of Applied Polymer Science. 29: 619-627. DOI: 10.1002/App.1984.070290217 |
0.301 |
|
| 1983 |
Kanicki J, Vander Donckt E, Boué S. Photovoltaic properties of In/trans-polyacetylene/Electrodag+502 Schottky barrier cells Solar Cells. 9: 281-288. DOI: 10.1016/0379-6787(83)90022-4 |
0.316 |
|
| 1982 |
Kanicki J, Boué S, Vander Donckt E. Novel approach to the study of electrical conduction in bromine-doped polyacetylene Thin Solid Films. 92: 243-251. DOI: 10.1016/0040-6090(82)90006-2 |
0.357 |
|
| 1982 |
Donckt EV, Noirhomme B, Kanicki J, Deltour R, Gusman G. Photovoltaic properties of the poly-2-vinylpyridine iodine complex—SnO2 system Journal of Applied Polymer Science. 27: 1-9. DOI: 10.1002/App.1982.070270101 |
0.441 |
|
| 1981 |
Kanicki J, Vander Donckt E, Boué S. Electrical conductivity and infrared absorption of trans-polyacetylene in the presence of iodine Journal of the Chemical Society, Faraday Transactions 2: Molecular and Chemical Physics. 77: 2157-2168. DOI: 10.1039/F29817702157 |
0.335 |
|
| 1980 |
Vander Donckt E, Kanicki J. Junction formation between undoped polyacetylene and metals European Polymer Journal. 16: 677-678. DOI: 10.1016/0014-3057(80)90033-6 |
0.343 |
|
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