| Year |
Citation |
Score |
| 2006 |
Yang J, Balijepalli A, Thornton TJ, Vandersand J, Blalock BJ, Wood ME, Mojarradi MM. Silicon-based integrated MOSFETS and MESFETS: A new paradigm for low power, mixed signal, monolithic systems using commercially available SOI International Journal of High Speed Electronics and Systems. 16: 723-732. DOI: 10.1142/S0129156406003977 |
0.32 |
|
| 2006 |
Balijepalli A, Joshi P, Kushner V, Yang J, Thornton TJ. CMOS-Compatible SOI MESFETs With High Breakdown Voltage Ieee Transactions On Electron Devices. 53: 3129-3135. DOI: 10.1109/Ted.2006.885530 |
0.349 |
|
| 2005 |
Spann J, Kushner V, Thornton TJ, Yang J, Balijepalli A, Barnaby HJ, Chen XJ, Alexander D, Kemp WT, Sampson SJ, Wood ME. Total dose radiation response of CMOS compatible SOI MESFETs Ieee Transactions On Nuclear Science. 52: 2398-2402. DOI: 10.1109/Tns.2005.860701 |
0.36 |
|
| 2004 |
Yang J, Spann J, Anderson R, Thornton T. High-frequency performance of subthreshold SOI MESFETs Ieee Electron Device Letters. 25: 652-654. DOI: 10.1109/Led.2004.834245 |
0.305 |
|
| 2004 |
Ashcroft B, Takulapalli B, Yang J, Laws GM, Zhang HQ, Tao NJ, Lindsay S, Gust D, Thornton TJ. Calibration of a pH sensitive buried channel silicon-on-insulator MOSFET for sensor applications Physica Status Solidi (B). 241: 2291-2296. DOI: 10.1002/Pssb.200404936 |
0.323 |
|
| 2003 |
Laws GM, Thornton TJ, Yang J, De la Garza L, Kozicki M, Gust D, Gu J, Sorid D. Drain current control in a hybrid molecular/MOSFET device Physica E: Low-Dimensional Systems and Nanostructures. 17: 659-663. DOI: 10.1016/S1386-9477(02)00923-2 |
0.379 |
|
| 2002 |
Yang J, De La Garza L, Thornton TJ, Kozicki M, Gust D. Controlling the threshold voltage of a metal-oxide-semiconductor field effect transistor by molecular protonation of the Si:SiO2 interface Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 1706-1709. DOI: 10.1116/1.1491543 |
0.375 |
|
| 2002 |
Yang J, Thornton TJ, Goodnick SM, Kozicki M, Lyding J. Buried channel silicon-on-insulator MOSFETs for hot-electron spectroscopy Physica B: Condensed Matter. 314: 354-357. DOI: 10.1016/S0921-4526(01)01404-1 |
0.362 |
|
| 2002 |
Yang J, Thornton TJ, Kozicki M, De la Garza L, Gust D. Molecular control of the threshold voltage of an NMOS inversion layer Microelectronic Engineering. 63: 135-139. DOI: 10.1016/S0167-9317(02)00634-2 |
0.375 |
|
| 2002 |
Laws GM, Thornton T, Yang J, Garza LDL, Kozicki M, Gust D. Molecular control of the drain current in a buried channel MOSFET Physica Status Solidi B-Basic Solid State Physics. 233: 83-89. DOI: 10.1002/1521-3951(200209)233:1<83::Aid-Pssb83>3.0.Co;2-# |
0.373 |
|
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