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Stephen J. Pearton - Publications

Affiliations: 
University of Florida, Gainesville, Gainesville, FL, United States 
Area:
Materials Science Engineering, Polymer Chemistry
Website:
https://mse.ufl.edu/people/mse-faculty/stephen-pearton/
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Year Citation  Score
2020 Islam Z, Haque A, Glavin NR, Xian M, Ren F, Polyakov AY, Kochkova AI, Tadjer M, Pearton SJ. In Situ Transmission Electron Microscopy Observations of Forward Bias Degradation of Vertical Geometry β-Ga2O3 Rectifiers Ecs Journal of Solid State Science and Technology. 9: 55008. DOI: 10.1149/2162-8777/Ab981D  0.342
2020 Carey PH, Ren F, Bae J, Kim J, Pearton SJ. Proton Irradiation of High Aluminum Content AlGaN Polarization Doped Field Effect Transistors Ecs Journal of Solid State Science and Technology. 9: 25003. DOI: 10.1149/2162-8777/Ab71F0  0.301
2020 CareyIV PH, Ren F, Armstrong AM, Klein BA, Allerman AA, Douglas EA, Baca AG, Pearton SJ. High temperature operation to 500 °C of AlGaN graded polarization-doped field-effect transistors Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 38: 33202. DOI: 10.1116/1.5135590  0.694
2020 Pearton SJ, Douglas EA, Shul RJ, Ren F. Plasma etching of wide bandgap and ultrawide bandgap semiconductors Journal of Vacuum Science & Technology A. 38: 020802. DOI: 10.1116/1.5131343  0.673
2020 Islam Z, Xian M, Haque A, Ren F, Tadjer M, Glavin N, Pearton S. In Situ Observation of β-Ga2O3 Schottky Diode Failure Under Forward Biasing Condition Ieee Transactions On Electron Devices. 67: 3056-3061. DOI: 10.1109/Ted.2020.3000441  0.335
2020 Polyakov AY, Smirnov NB, Shchemerov IV, Vasilev A, Yakimov EB, Chernykh AV, Kochkova AI, lAGOV PB, Pavlov YS, Kukharchuk OF, Suvorov AA, Garanin NS, Lee I, Xian M, Ren F, ... Pearton SJ, et al. Pulsed fast reactor neutron irradiation effects in Si doped n-type β-Ga2O3 Journal of Physics D. 53: 274001. DOI: 10.1088/1361-6463/Ab83C4  0.376
2020 Modak S, Chernyak L, Xian M, Ren F, Pearton SJ, Khodorov S, Lubomirsky I, Ruzin A, Dashevsky Z. Impact of electron injection on carrier transport and recombination in unintentionally doped GaN Journal of Applied Physics. 128: 85702. DOI: 10.1063/5.0017742  0.336
2020 Baik KH, Jung S, Cho C, Park K, Ren F, Pearton SJ, Jang S. AlGaN/GaN heterostructure based Pt nanonetwork Schottky diode with water-blocking layer Sensors and Actuators B-Chemical. 317: 128234. DOI: 10.1016/J.Snb.2020.128234  0.611
2020 Pearton SJ, Norton DP, Ip K, Heo YW, Steiner T. Retraction notice to “Recent progress in processing and properties of ZnO” [Prog. Mater. Sci. 50(3) (2004) 293–340] Progress in Materials Science. 100669. DOI: 10.1016/J.Pmatsci.2020.100669  0.643
2020 Polyakov AY, Haller C, Butté R, Smirnov NB, Alexanyan LA, Kochkova AI, Shikoh SA, Shchemerov IV, Chernykh AV, Lagov PB, Pavlov YS, Carlin J-, Mosca M, Grandjean N, Pearton SJ. Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers Journal of Alloys and Compounds. 845: 156269. DOI: 10.1016/J.Jallcom.2020.156269  0.387
2019 Ren F, Yang JC, Fares C, Pearton SJ. Device processing and junction formation needs for ultra-high power Ga 2 O 3 electronics Mrs Communications. 9: 77-87. DOI: 10.1557/Mrc.2019.4  0.403
2019 Kang T, Lo C, Liu L, Finch R, Ren F, Wang X, Douglas E, Pearton SJ, Hung S, Chang C. Thermal Simulation of 193 nm UV-Laser Lift-Off AlGaN/GaN High Electron Mobility Transistors Mounted on AlN Substrates Ecs Transactions. 41: 129-136. DOI: 10.1149/1.3629961  0.633
2019 Baik KH, Lim W, Pearton S, Wang Y, Ren F, Yang J, Jang S. a-Plane GaN for Hydrogen Sensing Applications Ecs Transactions. 28: 89-93. DOI: 10.1149/1.3377104  0.688
2019 Lim W, Wang Y, Lee J, Norton DP, Ren F, Pearton SJ. High Performacne InGaZnO4-based Thin film Transistors Fabricated at Low Temperature Ecs Transactions. 16: 303-308. DOI: 10.1149/1.2980567  0.633
2019 Lim W, Stafford L, Gila B, Norton D, Pearton S, Ren F, Song J, Park J, Heo Y, Lee J, Kim J. High Density Inductively Coupled Plasma Etching of Zinc-Oxide(ZnO) and Indium-Zinc Oxide(IZO) Ecs Transactions. 6: 239-247. DOI: 10.1149/1.2731191  0.593
2019 Pearton SJ, Chakrabarti UK, Lane E, Perley AP, Abernathy CR, Hobson WS, Jones KS. Characteristics of III‐V Dry Etching In HBr ‐ Based Discharges Journal of the Electrochemical Society. 139: 856-864. DOI: 10.1149/1.2069316  0.35
2019 Lee JW, Hays D, Abernathy CR, Pearton SJ, Hobson WS, Constantine C. Inductively Coupled Ar Plasma Damage in AlGaAs Journal of the Electrochemical Society. 144: L245-L247. DOI: 10.1149/1.1837932  0.321
2019 Lee JW, Abernathy CR, Pearton SJ, Ren F, Hobson WS, Shul RJ, Constantine C, Barratt C. Inductively Coupled Plasma Etch Damage in GaAs and InP Schottky Diodes Journal of the Electrochemical Society. 144: 1417-1422. DOI: 10.1149/1.1837604  0.345
2019 Vartuli CB, Pearton SJ, Lee JW, Abernathy CR, Mackenzie JD, Zolper JC, Shul RJ, Ren F. Wet Chemical Etching of AlN and InAlN in KOH Solutions Journal of the Electrochemical Society. 143: 3681-3684. DOI: 10.1149/1.1837271  0.364
2019 Hong J, Lee JW, Lambers ES, Abernathy CR, Pearton SJ, Constantine C, Hobson WS. Comparison of ICl and IBr Plasma Chemistries for Etching of InGaAlP Alloys Journal of the Electrochemical Society. 143: 3656-3661. DOI: 10.1149/1.1837267  0.347
2019 Gillis HP, Choutov DA, Martin KP, Pearton SJ, Abernathy CR. Low Energy Electron‐Enhanced Etching of GaN/Si in Hydrogen Direct Current Plasma Journal of the Electrochemical Society. 143: L251-L253. DOI: 10.1149/1.1837223  0.406
2019 Shul RJ, Howard AJ, Pearton SJ, Abernathy CR, Vartuli CB. High‐Density Etching of Group III Nitride Ternary Films Journal of the Electrochemical Society. 143: 3285-3290. DOI: 10.1149/1.1837199  0.408
2019 Lee JW, Pearton SJ, Santana CJ, Mileham JR, Lambers ES, Abernathy CR, Ren F, Hobson WS. High Ion Density Plasma Etching of InGaP, AlInP, and AlGaP in  CH 4 /  H 2 / Ar Journal of the Electrochemical Society. 143: 1093-1098. DOI: 10.1149/1.1836589  0.328
2019 Meyer LC, Lee JW, Johnson D, Huang M, Ren F, Anderson TJ, LaRoche JR, Lothian JR, Abernathy CR, Pearton SJ. Study of  NH 3 Plasma Damage on GaAs Schottky Diode in Inductively Coupled Plasma System Journal of the Electrochemical Society. 146: 2717-2719. DOI: 10.1149/1.1391998  0.402
2019 Xian M, Fares C, Ren F, Gila BP, Chen Y, Liao Y, Tadjer M, Pearton SJ. Effect of thermal annealing for W/β-Ga2O3 Schottky diodes up to 600 °C Journal of Vacuum Science & Technology B. 37: 061201. DOI: 10.1116/1.5125006  0.456
2019 Carey PH, Pearton SJ, Ren F, Baca AG, Klein BA, Allerman AA, Armstrong AM, Douglas EA, Kaplar RJ, Kotula PG. Extreme Temperature Operation of Ultra-Wide Bandgap AlGaN High Electron Mobility Transistors Ieee Transactions On Semiconductor Manufacturing. 32: 473-477. DOI: 10.1109/Tsm.2019.2932074  0.707
2019 Carey PH, Pearton SJ, Ren F, Baca AG, Klein BA, Allerman AA, Armstrong AM, Douglas EA, Kaplar RJ, Kotula PG. Operation Up to 500 °C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors Ieee Journal of the Electron Devices Society. 7: 444-452. DOI: 10.1109/Jeds.2019.2907306  0.681
2019 Polyakov AY, Haller C, Smirnov NB, Shiko AS, Shchemerov IV, Chernykh SV, Alexanyan LA, Lagov PB, Pavlov YS, Carlin J-, Mosca M, Butté R, Grandjean N, Pearton SJ. Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes Journal of Applied Physics. 126: 125708. DOI: 10.1063/1.5122314  0.351
2019 Yang J, Xian M, Carey P, Fares C, Partain J, Ren F, Tadjer M, Anber E, Foley D, Lang A, Hart J, Nathaniel J, Taheri ML, Pearton SJ, Kuramata A. Vertical geometry 33.2 A, 4.8 MW cm2 Ga2O3 field-plated Schottky rectifier arrays Applied Physics Letters. 114: 232106. DOI: 10.1063/1.5100256  0.358
2019 Polyakov AY, Shmidt NM, Smirnov NB, Shchemerov IV, Shabunina EI, Tal’nishnih NA, Lee I, Alexanyan LA, Tarelkin SA, Pearton SJ. Deep trap analysis in green light emitting diodes: Problems and solutions Journal of Applied Physics. 125: 215701. DOI: 10.1063/1.5093723  0.374
2019 Modak S, Lee J, Chernyak L, Yang J, Ren F, Pearton SJ, Khodorov S, Lubomirsky I. Electron injection-induced effects in Si-doped β-Ga2O3 Aip Advances. 9: 015127. DOI: 10.1063/1.5079730  0.323
2019 Fares C, Ren F, Lambers E, Hays DC, Gila BP, Pearton SJ. Valence- and Conduction-Band Offsets for Atomic-Layer-Deposited Al2O3 on (010) (Al0.14Ga0.86)2O3 Journal of Electronic Materials. 48: 1568-1573. DOI: 10.1007/S11664-018-06885-X  0.34
2019 Lee G, Pearton SJ, Ren F, Kim J. Heterojunction Bipolar Transistor: 2D Material-Based Vertical Double Heterojunction Bipolar Transistors with High Current Amplification (Adv. Electron. Mater. 3/2019) Advanced Electronic Materials. 5: 1970015. DOI: 10.1002/Aelm.201970015  0.31
2018 Lee G, Pearton SJ, Ren F, Kim J. Two-dimensionally layered p-black phosphorus/n-MoS/p-black phosphorus Heterojunctions. Acs Applied Materials & Interfaces. PMID 29485269 DOI: 10.1021/Acsami.7B19334  0.343
2018 Jang S, Jung S, Kim J, Ren F, Pearton SJ, Baik KH. Hydrogen Sensing Characteristics of Pt Schottky Diodes on () and (010) Ga2O3Single Crystals Ecs Journal of Solid State Science and Technology. 7: Q3180-Q3182. DOI: 10.1149/2.0261807Jss  0.557
2018 Polyakov AY, Shmidt NM, Smirnov NB, Shchemerov IV, Shabunina EI, Tal'nishnih NA, Lagov PB, Pavlov YS, Alexanyan LA, Pearton SJ. Defect States Induced in GaN-Based Green Light Emitting Diodes by Electron Irradiation Ecs Journal of Solid State Science and Technology. 7: 323-328. DOI: 10.1149/2.0211806Jss  0.3
2018 Polyakov AY, Smirnov NB, Shchemerov IV, Yang J, Ren F, Lo C, Laboutin O, Johnson JW, Pearton SJ. Trapping Phenomena in InAlN/GaN High Electron Mobility Transistors Ecs Journal of Solid State Science and Technology. 7: Q1-Q7. DOI: 10.1149/2.0131802Jss  0.323
2018 Jung S, Baik KH, Ren F, Pearton SJ, Jang S. AlGaN/GaN Heterostructure Based Schottky Diode Sensors with ZnO Nanorods for Environmental Ammonia Monitoring Applications Ecs Journal of Solid State Science and Technology. 7: Q3020-Q3024. DOI: 10.1149/2.0041807Jss  0.575
2018 Baik KH, Jung S, Ren F, Pearton SJ, Jang S. Moisture Insensitive PMMA Coated Pt-AlGaN/GaN Diode Hydrogen Sensor and Its Thermal Stability Ecs Journal of Solid State Science and Technology. 7: Q3009-Q3013. DOI: 10.1149/2.002107Jss  0.566
2018 Yang J, Sparks Z, Ren F, Pearton SJ, Tadjer M. Effect of surface treatments on electrical properties of β-Ga2O3 Journal of Vacuum Science & Technology B. 36: 061201. DOI: 10.1116/1.5052229  0.373
2018 Fares C, Ren F, Pearton SJ, Yang G, Kim J, Lo C, Johnson JW. Effect of proton irradiation energy on SiNx/AlGaN/GaN metal-insulator semiconductor high electron mobility transistors Journal of Vacuum Science & Technology B. 36: 052202. DOI: 10.1116/1.5049596  0.389
2018 Fares C, Ren F, Pearton SJ, Yang G, Kim J, Lo C, Wayne Johnson J. Effect of alpha-particle irradiation dose on SiNx/AlGaN/GaN metal–insulator semiconductor high electron mobility transistors Journal of Vacuum Science & Technology B. 36: 041203. DOI: 10.1116/1.5042261  0.349
2018 Yang J, Chen Z, Ren F, Pearton SJ, Yang G, Kim J, Lee J, Flitsiyan E, Chernyak L, Kuramata A. 10 MeV proton damage in β-Ga2O3 Schottky rectifiers Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 36: 011206. DOI: 10.1116/1.5013155  0.398
2018 Pearton SJ, Ren F, Tadjer M, Kim J. Perspective: Ga2O3for ultra-high power rectifiers and MOSFETS Journal of Applied Physics. 124: 220901. DOI: 10.1063/1.5062841  0.345
2018 Polyakov AY, Smirnov NB, Shchemerov IV, Yakimov EB, Pearton SJ, Fares C, Yang J, Ren F, Kim JH, Lagov PB, Stolbunov VS, Kochkova A. Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga2O3 Applied Physics Letters. 113: 92102. DOI: 10.1063/1.5049130  0.318
2018 Yang J, Ren F, Tadjer M, Pearton SJ, Kuramata A. Ga2O3 Schottky rectifiers with 1 ampere forward current, 650 V reverse breakdown and 26.5 MW.cm-2 figure-of-merit Aip Advances. 8: 055026. DOI: 10.1063/1.5034444  0.346
2018 Yakimov EB, Polyakov AY, Smirnov NB, Shchemerov IV, Yang J, Ren F, Yang G, Kim JH, Pearton SJ. Diffusion length of non-equilibrium minority charge carriers in β-Ga2O3 measured by electron beam induced current Journal of Applied Physics. 123: 185704. DOI: 10.1063/1.5027559  0.324
2018 Polyakov AY, Smirnov NB, Shchemerov IV, Yakimov EB, Yang J, Ren F, Yang G, Kim JH, Kuramata A, Pearton SJ. Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage Applied Physics Letters. 112: 32107. DOI: 10.1063/1.5012993  0.371
2018 Lee J, Flitsiyan E, Chernyak L, Yang J, Ren F, Pearton SJ, Meyler B, Salzman YJ. Effect of 1.5 MeV electron irradiation on β-Ga2O3 carrier lifetime and diffusion length Applied Physics Letters. 112: 082104. DOI: 10.1063/1.5011971  0.324
2018 Pearton SJ, Yang J, Cary PH, Ren F, Kim J, Tadjer MJ, Mastro MA. A review of Ga2O3materials, processing, and devices Applied Physics Reviews. 5: 011301. DOI: 10.1063/1.5006941  0.362
2018 Yakimov EB, Polyakov AY, Lee I, Pearton SJ. Recombination properties of dislocations in GaN Journal of Applied Physics. 123: 161543. DOI: 10.1063/1.4995580  0.342
2018 Jang S, Jung S, Beers K, Yang J, Ren F, Kuramata A, Pearton S, Baik KH. A comparative study of wet etching and contacts on (2¯01) and (010) oriented β-Ga2O3 Journal of Alloys and Compounds. 731: 118-125. DOI: 10.1016/J.Jallcom.2017.09.336  0.634
2017 Yang G, Jang S, Ren F, Pearton SJ, Kim J. Influence of high-energy proton irradiation on β-Ga2O3 nanobelt field-effect transistors. Acs Applied Materials & Interfaces. PMID 29083157 DOI: 10.1021/Acsami.7B13881  0.3
2017 Carey PH, Ren F, Hays DC, Gila BP, Pearton SJ, Jang S, Kuramata A. Band alignment of atomic layer deposited SiO2and HfSiO4with $(\bar{2}01)$ β-Ga2O3 Japanese Journal of Applied Physics. 56: 071101. DOI: 10.7567/Jjap.56.071101  0.301
2017 Jung S, Baik KH, Ren F, Pearton SJ, Jang S. Silver-Functionalized AlGaN/GaN Heterostructure Diode for Ethanol Sensing Journal of the Electrochemical Society. 164: B417-B420. DOI: 10.1149/2.0781709Jes  0.544
2017 Ren F, Pearton SJ, Ahn S, Lin Y, Machuca F, Weiss R, Welsh A, McCartney MR, Smith DJ, Kravchenko II. AlGaN/GaN High Electron Mobility Transistor Grown and Fabricated on ZrTi Metallic Alloy Buffer Layers Ecs Journal of Solid State Science and Technology. 6: S3078-S3080. DOI: 10.1149/2.0161711Jss  0.349
2017 Polyakov AY, Smirnov NB, Shchemerov IV, Ren F, Pearton SJ. Gate-Lag in AlGaN/GaN High Electron Mobility Transistors: A Model of Charge Capture Ecs Journal of Solid State Science and Technology. 6. DOI: 10.1149/2.0091711Jss  0.315
2017 Ren F, Pearton SJ, Kang TS, Cheney DJ, Gila BP. Use of sub-bandgap optical pumping to identify defects in AlGaN/GaN high electron mobility transistors (Conference Presentation) Proceedings of Spie. 10104. DOI: 10.1117/12.2251166  0.35
2017 Carey PH, Yang J, Ren F, Hays DC, Pearton SJ, Kuramata A, Kravchenko II. Improvement of Ohmic contacts on Ga2O3through use of ITO-interlayers Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 061201. DOI: 10.1116/1.4995816  0.402
2017 Jung S, Baik KH, Ren F, Pearton SJ, Jang S. Detection of ammonia at low concentrations (0.1–2 ppm) with ZnO nanorod-functionalized AlGaN/GaN high electron mobility transistors Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 042201. DOI: 10.1116/1.4989370  0.637
2017 Yang J, Ren F, Khanna R, Bevlin K, Geerpuram D, Tung L, Lin J, Jiang H, Lee J, Flitsiyan E, Chernyak L, Pearton SJ, Kuramata A. Annealing of dry etch damage in metallized and bare (-201) Ga2O3 Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 51201. DOI: 10.1116/1.4986300  0.425
2017 Carey PH, Ren F, Hays DC, Gila BP, Pearton SJ, Jang S, Kuramata A. Conduction and valence band offsets of LaAl2O3 with (−201) β-Ga2O3 Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 041201. DOI: 10.1116/1.4984097  0.333
2017 Yang J, Ren F, Pearton SJ, Yang G, Kim J, Kuramata A. 1.5 MeV electron irradiation damage in β-Ga2O3 vertical rectifiers Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 031208. DOI: 10.1116/1.4983377  0.357
2017 Yang J, Ahn S, Ren F, Pearton S, Khanna R, Bevlin K, Geerpuram D, Kuramata A. Inductively coupled plasma etching of bulk, single-crystal Ga2O3 Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 31205. DOI: 10.1116/1.4982714  0.327
2017 Polyakov AY, Smirnov NB, Shchemerov IV, Lee I, Jang T, Dorofeev AA, Gladysheva NB, Kondratyev ES, Turusova YA, Zinovyev RA, Turutin AV, Ren F, Pearton SJ. Current relaxation analysis in AlGaN/GaN high electron mobility transistors Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 011207. DOI: 10.1116/1.4973973  0.327
2017 Hays DC, Gila BP, Pearton SJ, Trucco A, Thorpe R, Ren F. Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1−xOy on InGaZnO4 Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 011206. DOI: 10.1116/1.4973882  0.371
2017 Yang J, Ahn S, Ren F, Pearton SJ, Jang S, Kuramata A. High Breakdown Voltage (−201) $\beta $ -Ga2O3 Schottky Rectifiers Ieee Electron Device Letters. 38: 906-909. DOI: 10.1109/Led.2017.2703609  0.383
2017 Jung S, Baik KH, Ren F, Pearton SJ, Jang S. Pt-AlGaN/GaN Hydrogen Sensor With Water-Blocking PMMA Layer Ieee Electron Device Letters. 38: 657-660. DOI: 10.1109/Led.2017.2681114  0.576
2017 Jung S, Baik KH, Ren F, Pearton SJ, Jang S. Temperature and Humidity Dependence of Response of PMGI-Encapsulated Pt-AlGaN/GaN Diodes for Hydrogen Sensing Ieee Sensors Journal. 17: 5817-5822. DOI: 10.1109/Jsen.2017.2733343  0.625
2017 Lee J, Yadav A, Antia M, Zaffino V, Flitsiyan E, Chernyak L, Salzman J, Meyler B, Ahn S, Ren F, Pearton SJ. Low dose 60Co gamma-irradiation effects on electronic carrier transport and DC characteristics of AlGaN/GaN high-electron-mobility transistors Radiation Effects and Defects in Solids. 172: 250-256. DOI: 10.1080/10420150.2017.1300903  0.364
2017 Yang J, Carey P, Ren F, Wang Y, Good ML, Jang S, Mastro MA, Pearton SJ. Rapid detection of cardiac troponin I using antibody-immobilized gate-pulsed AlGaN/GaN high electron mobility transistor structures Applied Physics Letters. 111: 202104. DOI: 10.1063/1.5011151  0.301
2017 Lee I, Polyakov AY, Smirnov NB, Shchemerov IV, Lagov PB, Zinov'ev RA, Yakimov EB, Shcherbachev KD, Pearton SJ. Point defects controlling non-radiative recombination in GaN blue light emitting diodes: Insights from radiation damage experiments Journal of Applied Physics. 122: 115704. DOI: 10.1063/1.5000956  0.339
2017 Carey PH, Yang J, Ren F, Hays DC, Pearton SJ, Jang S, Kuramata A, Kravchenko II. Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au Aip Advances. 7: 095313. DOI: 10.1063/1.4996172  0.418
2017 Lee I, Polyakov AY, Hwang SM, Shmidt NM, Shabunina EI, Tal'Nishnih NA, Smirnov NB, Shchemerov IV, Zinovyev RA, Tarelkin SA, Pearton SJ. Degradation-induced low frequency noise and deep traps in GaN/InGaN near-UV LEDs Applied Physics Letters. 111: 62103. DOI: 10.1063/1.4985190  0.374
2017 Lee I, Polyakov AY, Smirnov NB, Zinovyev RA, Bae K, Chung T, Hwang S, Baek JH, Pearton SJ. Changes in electron and hole traps in GaN-based light emitting diodes from near-UV to green spectral ranges Applied Physics Letters. 110: 192107. DOI: 10.1063/1.4983556  0.329
2017 Yang J, Ahn S, Ren F, Pearton SJ, Jang S, Kim J, Kuramata A. High reverse breakdown voltage Schottky rectifiers without edge termination on Ga2O3 Applied Physics Letters. 110: 192101. DOI: 10.1063/1.4983203  0.377
2017 Hays DC, Gila BP, Pearton SJ, Ren F. Energy band offsets of dielectrics on InGaZnO4 Applied Physics Reviews. 4: 021301. DOI: 10.1063/1.4980153  0.374
2017 Yang J, Ahn S, Ren F, Khanna R, Bevlin K, Geerpuram D, Pearton SJ, Kuramata A. Inductively coupled plasma etch damage in (-201) Ga2O3 Schottky diodes Applied Physics Letters. 110: 142101. DOI: 10.1063/1.4979592  0.366
2017 Kwon Y, Lee G, Oh S, Kim J, Pearton SJ, Ren F. Tuning the thickness of exfoliated quasi-two-dimensional β-Ga2O3 flakes by plasma etching Applied Physics Letters. 110: 131901. DOI: 10.1063/1.4979028  0.307
2017 Lee I, Polyakov AY, Yakimov EB, Smirnov NB, Shchemerov IV, Tarelkin SA, Didenko SI, Tapero KI, Zinovyev RA, Pearton SJ. Defects responsible for lifetime degradation in electron irradiated n-GaN grown by hydride vapor phase epitaxy Applied Physics Letters. 110: 112102. DOI: 10.1063/1.4978641  0.372
2017 Lee I, Cho H, Bae KB, Polyakov AY, Smirnov NB, Zinovyev RA, Baek JH, Chung T, Shchemerov IV, Kondratyev ES, Pearton SJ. Effect of nanopillar sublayer embedded with SiO2 on deep traps in green GaN/InGaN light emitting diodes Journal of Applied Physics. 121: 045108. DOI: 10.1063/1.4974971  0.386
2017 Carey PH, Ren F, Hays DC, Gila B, Pearton S, Jang S, Kuramata A. Valence and conduction band offsets in AZO/Ga2O3 heterostructures Vacuum. 141: 103-108. DOI: 10.1016/J.Vacuum.2017.03.031  0.326
2017 Whiting P, Rudawski N, Holzworth M, Pearton S, Jones K, Liu L, Kang T, Ren F. Nanocrack formation in AlGaN/GaN high electron mobility transistors utilizing Ti/Al/Ni/Au ohmic contacts Microelectronics Reliability. 70: 41-48. DOI: 10.1016/J.Microrel.2017.02.005  0.351
2017 Carey PH, Ren F, Hays DC, Gila B, Pearton S, Jang S, Kuramata A. Band offsets in ITO/Ga2O3 heterostructures Applied Surface Science. 422: 179-183. DOI: 10.1016/J.Apsusc.2017.05.262  0.35
2017 Lee I, Polyakov AY, Smirnov NB, Shchemerov IV, Shmidt NM, Tal'nishnih NA, Shabunina EI, Cho H, Hwang S, Zinovyev RA, Didenko SI, Lagov PB, Pearton SJ. Electron irradiation of near-UV GaN/InGaN light emitting diodes Physica Status Solidi (a). 214: 1700372. DOI: 10.1002/Pssa.201700372  0.343
2016 Yakimov EB, Vergeles PS, Polyakov AY, Lee I, Pearton SJ. Radiation enhanced basal plane dislocation glide in GaN Japanese Journal of Applied Physics. 55: 05FM03. DOI: 10.7567/Jjap.55.05Fm03  0.313
2016 Lee I, Polyakov AY, Smirnov NB, Yakimov EB, Tarelkin SA, Turutin AV, Shemerov IV, Pearton SJ. Electron traps as major recombination centers in n-GaN films grown by metalorganic chemical vapor deposition Applied Physics Express. 9: 61002. DOI: 10.7567/Apex.9.061002  0.381
2016 Pearton SJ, Ren F, Patrick E, Law ME, Polyakov AY. Review - Ionizing radiation damage effects on GaN devices Ecs Journal of Solid State Science and Technology. 5: Q35-Q60. DOI: 10.1149/2.0251602Jss  0.36
2016 Polyakov AY, Smirnov NB, Dorofeev AA, Gladysheva NB, Kondratyev ES, Shemerov IV, Turutin AV, Ren F, Pearton SJ. Deep Traps in AlGaN/GaN High Electron Mobility Transistors on SiC Ecs Journal of Solid State Science and Technology. 5: Q260-Q265. DOI: 10.1149/2.0191610Jss  0.345
2016 Ren F, Pearton SJ, Ahn S, Lin YH, Machuca F, Weiss R, Welsh A, McCartney MR, Smith DJ, Kravchenko II. Evaluation of AlGaN/GaN high electron mobility transistors grown on ZrTi buffer layers with sapphire substrates Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 34. DOI: 10.1116/1.4963064  0.366
2016 Ahn S, Kim BJ, Lin YH, Ren F, Pearton SJ, Yang G, Kim J, Kravchenko II. Effect of proton irradiation dose on InAlN/GaN metal-oxide semiconductor high electron mobility transistors with Al2O3 gate oxide Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 34. DOI: 10.1116/1.4959786  0.379
2016 Kim B, Ahn S, Ren F, Pearton SJ, Yang G, Kim J. Effects of proton irradiation and thermal annealing on off-state step-stressed AlGaN/GaN high electron mobility transistors Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 34: 041231. DOI: 10.1116/1.4959028  0.333
2016 Lim W, Kum H, Choi YJ, Sim SH, Yeon JH, Kim JS, Seong HK, Cha NG, Kim YI, Park YS, Yoo G, Pearton SJ. SiO2 nanohole arrays with high aspect ratio for InGaN/GaN nanorod-based phosphor-free white light-emitting-diodes Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 34. DOI: 10.1116/1.4959027  0.685
2016 Polyakov AY, Smirnov NB, Turutin AV, Shemerov IS, Ren F, Pearton SJ, Johnson JW. Deep traps and instabilities in AlGaN/GaN high electron mobility transistors on Si substrates Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 34: 41216. DOI: 10.1116/1.4953347  0.414
2016 Ahn S, Lin Y, Ren F, Oh S, Jung Y, Yang G, Kim J, Mastro MA, Hite JK, Eddy CR, Pearton SJ. Effect of 5 MeV proton irradiation damage on performance of β-Ga2O3 photodetectors Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 34: 041213. DOI: 10.1116/1.4950872  0.314
2016 Kang TS, Lin YH, Ahn S, Ren F, Gila BP, Pearton SJ, Cheney DJ. Identification of trap locations in AlGaN/GaN high electron mobility transistors by varying photon flux during sub-bandgap optical pumping Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 34. DOI: 10.1116/1.4936861  0.308
2016 Ahn S, Ren F, Patrick E, Law ME, Pearton SJ, Kuramata A. Deuterium incorporation and diffusivity in plasma-exposed bulk Ga2O3 Applied Physics Letters. 109: 242108. DOI: 10.1063/1.4972265  0.355
2016 Lee I, Polyakov AY, Smirnov NB, Yakimov EB, Tarelkin SA, Turutin AV, Shemerov IV, Pearton SJ. Studies of deep level centers determining the diffusion length in epitaxial layers and crystals of undoped n-GaN Journal of Applied Physics. 119: 205109. DOI: 10.1063/1.4952734  0.384
2016 Polyakov AY, Smirnov NB, Yakimov EB, Lee IH, Pearton SJ. Electrical, luminescent, and deep trap properties of Si doped n-GaN grown by pendeo epitaxy Journal of Applied Physics. 119. DOI: 10.1063/1.4939649  0.412
2016 Morrow WK, Lee C, Denbaars SP, Ren F, Pearton SJ. Role of graphene interlayers in mitigating degradation of Ni/Au ohmic contact morphology on p-type GaN Vacuum. 128: 34-38. DOI: 10.1016/J.Vacuum.2016.03.004  0.355
2016 Hays DC, Gila BP, Pearton SJ, Kim BJ, Ren F. Band alignment in ZrSiO4/ZnO heterojunctions Vacuum. 125: 113-117. DOI: 10.1016/J.Vacuum.2015.12.010  0.336
2016 Polyakov AY, Smirnov NB, Yakimov EB, Tarelkin SA, Turutin AV, Shemerov IV, Pearton SJ, Bae KB, Lee IH. Deep traps determining the non-radiative lifetime and defect band yellow luminescence in n-GaN Journal of Alloys and Compounds. 686: 1044-1052. DOI: 10.1016/J.Jallcom.2016.06.297  0.385
2015 Yadav A, Flitsiyan E, Chernyak L, Ren F, Pearton SJ, Johnson JW, Lubomirsky I. Impact of low dose gamma irradiation on electronic carrier transport in AlGaN/GaN High Electron Mobility Transistors Mrs Proceedings. 1792. DOI: 10.1557/Opl.2015.511  0.349
2015 Patrick EE, Choudhury M, Ren F, Pearton SJ, Law ME. Simulation of radiation effects in AlGaN/GaN HEMTs Ecs Transactions. 66: 21-31. DOI: 10.1149/2.0181503Jss  0.324
2015 Hays DC, Gila BP, Pearton SJ, Ren F. Band offsets in HfSiO4/IGZO heterojunctions Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 33: 061209. DOI: 10.1116/1.4936117  0.355
2015 Polyakov AY, Smirnov NB, Lee IH, Pearton SJ. Deep level transient spectroscopy in III-Nitrides: Decreasing the effects of series resistance Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 33. DOI: 10.1116/1.4932013  0.316
2015 Hays DC, Gila BP, Pearton SJ, Kim BJ, Ren F, Jang TS. Band offsets in Sc2O3/ZnO heterostructures deposited by RF magnetron sputtering Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 33. DOI: 10.1116/1.4931035  0.373
2015 Kim BJ, Hwang YH, Ahn S, Ren F, Pearton SJ, Kim J, Jang TS. Effects of 340keV proton irradiation on InGaN/GaN blue light-emitting diodes Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 33. DOI: 10.1116/1.4930297  0.314
2015 Ahn S, Dong C, Zhu W, Kim BJ, Hwang YH, Ren F, Pearton SJ, Yang G, Kim J, Patrick E, Tracy B, Smith DJ, Kravchenko II. Effect of proton irradiation energy on AlGaN/GaN metal-oxide semiconductor high electron mobility transistors Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 33. DOI: 10.1116/1.4928730  0.359
2015 Hwang YH, Dong C, Hsieh YL, Zhu W, Ahn S, Ren F, Pearton SJ, Kravchenko II. Improvement of drain breakdown voltage with a back-side gate on AlGaN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 33. DOI: 10.1116/1.4922022  0.4
2015 Ahn S, Zhu W, Dong C, Le L, Hwang YH, Kim BJ, Ren F, Pearton SJ, Lind AG, Jones KS, Kravchenko II, Zhang ML. Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 33. DOI: 10.1116/1.4918715  0.365
2015 Kim B, Ahn S, Hwang Y, Ren F, Pearton SJ, Kim J, Zhang M. Investigating the effect of thermal annealing on dc performance of off-state drain-voltage step-stressed AlGaN/GaN high electron mobility transistors Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 33: 031204. DOI: 10.1116/1.4916882  0.378
2015 Yin W, Smithe K, Weiser P, Stavola M, Fowler WB, Boatner L, Pearton SJ, Hays DC, Koch SG. Hydrogen centers and the conductivity of i n2 O3 single crystals Physical Review B - Condensed Matter and Materials Physics. 91. DOI: 10.1103/Physrevb.91.075208  0.314
2015 Yadav A, Flitsiyan E, Chernyak L, Hwang Y, Hsieh Y, Lei L, Ren F, Pearton SJ, Lubomirsky I. Low and moderate dose gamma-irradiation and annealing impact on electronic and electrical properties of AlGaN/GaN high electron mobility transistors Radiation Effects and Defects in Solids. 170: 377-385. DOI: 10.1080/10420150.2015.1010170  0.375
2015 Kim BJ, Hwang YH, Ahn S, Zhu W, Dong C, Lu L, Ren F, Holzworth MR, Jones KS, Pearton SJ, Smith DJ, Kim J, Zhang ML. Recovery in dc and rf performance of off-state step-stressed AlGaN/GaN high electron mobility transistors with thermal annealing Applied Physics Letters. 106. DOI: 10.1063/1.4918530  0.359
2015 Yakimov EB, Vergeles PS, Polyakov AY, Lee I, Pearton SJ. Movement of basal plane dislocations in GaN during electron beam irradiation Applied Physics Letters. 106: 132101. DOI: 10.1063/1.4916632  0.301
2015 Hays DC, Gila BP, Lambers ES, Pearton SJ, Ren F. Valence and conduction band offsets in sputtered HfO2/InGaZnO4 heterostructures Vacuum. 116: 60-64. DOI: 10.1016/J.Vacuum.2015.02.017  0.342
2015 Pearton SJ, Hwang YS, Ren F. Radiation Effects in GaN-Based High Electron Mobility Transistors Jom. DOI: 10.1007/S11837-015-1359-Y  0.371
2014 Kim JK, Kim KW, Douglas EA, Gila BP, Craciun V, Lambers ES, Norton DP, Ren F, Pearton SJ, Cho H. Band offsets in YSZ/InGaZnO4 heterostructure system. Journal of Nanoscience and Nanotechnology. 14: 3925-7. PMID 24734665 DOI: 10.1166/Jnn.2014.7939  0.645
2014 Kim H, Baik KH, Ren F, Pearton SJ, Jang S. (Invited) Hydrogen Sensing Characteristics of Gallium Nitrides with Various Crystal Planes Ecs Transactions. 61: 353-357. DOI: 10.1149/06104.0353ECST  0.495
2014 Hwang YH, Kang TS, Ren F, Pearton SJ. Novel approach to improve heat dissipation of AlGaN/GaN high electron mobility transistors with a Cu filled via under device active area Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 32. DOI: 10.1116/1.4896593  0.407
2014 Hwang YH, Ahn S, Chen D, Ren F, Gila BP, Hays D, Pearton SJ, Lo CF, Johnson JW. High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 32. DOI: 10.1116/1.4891966  0.427
2014 Anderson T, Koehler A, Hwang YH, Hsieh YL, Li S, Ren F, Johnson JW, Pearton SJ. Effect of proton irradiation on thermal resistance and breakdown voltage of InAlN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 32. DOI: 10.1116/1.4891629  0.405
2014 Liu L, Xi Y, Ahn S, Ren F, Gila BP, Pearton SJ, Kravchenko II. Characteristics of gate leakage current and breakdown voltage of AlGaN/GaN high electron mobility transistors after postprocess annealing Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 32: 052201. DOI: 10.1116/1.4891168  0.419
2014 Hwang YH, Hsieh YL, Lei L, Li S, Ren F, Pearton SJ, Yadav A, Schwarz C, Shatkhin M, Wang L, Flitsiyan E, Chernyak L, Baca AG, Allerman AA, Sanchez CA, et al. Effect of low dose γ-irradiation on DC performance of circular AlGaN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 32. DOI: 10.1116/1.4868632  0.352
2014 Liu L, Hwang Y, Xi Y, Ren F, Craciun V, Pearton SJ, Yang G, Kim H, Kim J. Study on the effects of proton irradiation on the dc characteristics of AlGaN/GaN high electron mobility transistors with source field plate Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 32: 022202. DOI: 10.1116/1.4866401  0.358
2014 Li S, Hwang Y, Hsieh Y, Ren F, Pearton SJ, Patrick E, Law ME. Enhancement of AlGaN/GaN High Electron Mobility Transistor Off-State Drain Breakdown Voltage via Backside Proton Irradiation Ecs Transactions. 61: 117-126. DOI: 10.1116/1.4864070  0.391
2014 Xi Y, Hsieh YL, Hwang YH, Li S, Ren F, Pearton SJ, Patrick E, Law ME, Yang G, Kim HY, Kim J, Baca AG, Allerman AA, Sanchez CA. Effect of 5 MeV proton radiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 32. DOI: 10.1116/1.4836577  0.354
2014 Lee I, Polyakov AY, Smirnov NB, Govorkov AV, Usikov AS, Helava H, Makarov YN, Pearton SJ. Deep hole traps in undoped n-GaN films grown by hydride vapor phase epitaxy Journal of Applied Physics. 115: 223702. DOI: 10.1063/1.4882715  0.328
2014 Hwang Y, Li S, Hsieh Y, Ren F, Pearton SJ, Patrick E, Law ME, Smith DJ. Effect of proton irradiation on AlGaN/GaN high electron mobility transistor off-state drain breakdown voltage Applied Physics Letters. 104: 082106. DOI: 10.1063/1.4866858  0.378
2014 Pearton S, Ren F. Advances in ZnO-based materials for light emitting diodes Current Opinion in Chemical Engineering. 3: 51-55. DOI: 10.1016/J.Coche.2013.11.002  0.33
2014 Pearton SJ, Deist R, Polyakov AY, Ren F, Liu L, Kim JH. Radiation Damage in GaN-Based Materials and Devices Advanced Energy Materials. 345-387. DOI: 10.1002/9781118904923.Ch9  0.355
2013 Kim BJ, Yang G, Kim HY, Baik KH, Mastro MA, Hite JK, Eddy CR, Ren F, Pearton SJ, Kim J. GaN-based ultraviolet light-emitting diodes with AuCl₃-doped graphene electrodes. Optics Express. 21: 29025-30. PMID 24514418 DOI: 10.1364/Oe.21.029025  0.572
2013 Park H, Baik KH, Kim J, Ren F, Pearton SJ. A facile method for highly uniform GaN-based nanorod light-emitting diodes with InGaN/GaN multi-quantum-wells. Optics Express. 21: 12908-13. PMID 23736510 DOI: 10.1364/Oe.21.012908  0.643
2013 Pearton SJ, Ren F. Wide Bandgap Semiconductor One-Dimensional Nanostructures for Applications in Nanoelectronics and Nanosensors Nanomaterials and Nanotechnology. 3: 1. DOI: 10.5772/56188  0.302
2013 Kim BJ, Yang G, Kim HY, Baik KH, Mastro MA, Hite JK, Eddy CR, Ren F, Pearton SJ, Kim J. GaN-based ultraviolet light-emitting diodes with AuCl3-doped graphene electrodes Optics Express. 21: 29025-29030. DOI: 10.1364/OE.21.029025  0.512
2013 Douglas EA, Zeenberg D, Maeda M, Gila BP, Abernathy CR, Pearton SJ, Ren F. Depth-Resolved Cathodoluminescence Spectroscopy Characterization of RF Stressed AlGaN/GaN High Electron Mobility Transistors Ecs Solid State Letters. 2: Q39-Q42. DOI: 10.1149/2.002306Ssl  0.66
2013 Cho H, Kim K, Douglas EA, Gila BP, Craciun V, Lambers ES, Norton DP, Ren F, Pearton SJ. Band Offsets in Dielectric/InGaZnO4 Heterojunctions Ecs Transactions. 50: 367-375. DOI: 10.1149/05006.0367ECST  0.586
2013 Liu L, Lo CF, Xi YY, Wang YX, Kim HY, Kim J, Pearton SJ, Laboutin O, Cao Y, Johnson JW, Kravchenko II, Ren F. The effects of proton irradiation on the reliability of InAlN/GaN high electron mobility transistors Proceedings of Spie - the International Society For Optical Engineering. 8625. DOI: 10.1117/12.2007287  0.372
2013 Polyakov AY, Smirnov NB, Kozhukhova EA, Osinsky AV, Pearton SJ. Temperature stability of high-resistivity GaN buffer layers grown by metalorganic chemical vapor deposition Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 31: 51208. DOI: 10.1116/1.4820905  0.39
2013 Kim H, Kim J, Liu L, Lo C, Ren F, Pearton SJ. Electrical characterization of60Co gamma radiation-exposed InAlN/GaN high electron mobility transistors Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 31: 051210. DOI: 10.1116/1.4820129  0.352
2013 Hwang YH, Liu L, Velez C, Ren F, Gila BP, Hays D, Pearton SJ, Lambers E, Kravchenko II, Lo CF, Johnson JW. GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 31. DOI: 10.1116/1.4816477  0.421
2013 Liu L, Velez Cuervo C, Xi Y, Ren F, Pearton SJ, Kim H, Kim J, Kravchenko II. Impact of proton irradiation on dc performance of AlGaN/GaN high electron mobility transistors Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 31: 042202. DOI: 10.1116/1.4813785  0.345
2013 Xi Y, Liu L, Ren F, Pearton SJ, Kim J, Dabiran A, Chow PP. Methane detection using Pt-gated AlGaN/GaN high electron mobility transistor based Schottky diodes Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 31: 032203. DOI: 10.1116/1.4803743  0.375
2013 Pearton SJ, Deist R, Ren F, Liu L, Polyakov AY, Kim J. Review of radiation damage in GaN-based materials and devices Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 31: 050801. DOI: 10.1116/1.4799504  0.347
2013 Xi Y, Liu L, Hwang Y, Phillips O, Ren F, Pearton SJ, Kim J, Hsu C, Lo C, Wayne Johnson J. Study of hydrogen detection response time with Pt-gated diodes fabricated on AlGaN/GaN heterostructure Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 31: 032202. DOI: 10.1116/1.4798612  0.306
2013 Hwang YS, Liu L, Ren F, Polyakov AY, Smirnov NB, Govorkov AV, Kozhukhova EA, Kolin NG, Boiko VM, Vereyovkin SS, Ermakov VS, Lo CF, Laboutin O, Cao Y, Johnson JW, ... ... Pearton SJ, et al. Effect of electron irradiation on AlGaN/GaN and InAlN/GaN heterojunctions Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4795210  0.422
2013 Douglas EA, Bielejec E, Frenzer P, Yates BR, Pearton SJ, Lo C, Liu L, Kang T, Ren F. Effects of 2 MeV Ge+ irradiation on AlGaN/GaN high electron mobility transistors Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 31: 021205. DOI: 10.1116/1.4792370  0.693
2013 Liu L, Lo CF, Xi Y, Wang Y, Ren F, Pearton SJ, Kim HY, Kim J, Fitch RC, Walker DE, Chabak KD, Gillespie JK, Tetlak SE, Via GD, Crespo A, et al. Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4788904  0.332
2013 Liu L, Lo CF, Xi Y, Ren F, Pearton SJ, Laboutin O, Cao Y, Johnson JW, Kravchenko II. Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4773060  0.383
2013 Polyakov AY, Smirnov NB, Govorkov AV, Kozhukhova EA, Pearton SJ, Ren F, Lui L, Johnson JW, Kargin NI, Ryzhuk RV. Deep centers and persistent photocapacitance in AlGaN/GaN high electron mobility transistor structures grown on Si substrates Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4773057  0.431
2013 Lim W, Sung Y, Kim S, Shin Y, Jang T, Park T, Kim G, Song S, Lee W, Kim Y, Kim S, Pearton SJ. Effect of oxygen plasma treatment on nonalloyed Al/Ti-based contact for high power InGaN/GaN vertical light-emitting diodes Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 31: 010602. DOI: 10.1116/1.4773006  0.67
2013 Patrick E, Law ME, Liu L, Velez Cuervo C, Xi Y, Ren F, Pearton SJ. Modeling Proton Irradiation in AlGaN/GaN HEMTs: Understanding the Increase of Critical Voltage Ieee Transactions On Nuclear Science. 60: 4103-4108. DOI: 10.1109/Tns.2013.2286115  0.334
2013 Cheney DJ, Douglas EA, Liu L, Lo CF, Xi YY, Gila BP, Ren F, Horton D, Law ME, Smith DJ, Pearton SJ. Reliability studies of AlGaN/GaN high electron mobility transistors Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/7/074019  0.658
2013 Hung SC, Woon WY, Lan SM, Ren F, Pearton SJ. Characteristics of carbon monoxide sensors made by polar and nonpolar zinc oxide nanowires gated AlGaN/GaN high electron mobility transistor Applied Physics Letters. 103. DOI: 10.1063/1.4818671  0.388
2013 Holzworth MR, Rudawski NG, Whiting PG, Pearton SJ, Jones KS, Lu L, Kang TS, Ren F, Patrick E, Law ME. Field-induced defect morphology in Ni-gate AlGaN/GaN high electron mobility transistors Applied Physics Letters. 103. DOI: 10.1063/1.4813535  0.375
2013 Stehr JE, Wang XJ, Filippov S, Pearton SJ, Ivanov IG, Chen WM, Buyanova IA. Defects in N, O and N, Zn implanted ZnO bulk crystals Journal of Applied Physics. 113: 103509. DOI: 10.1063/1.4795261  0.311
2013 Schwarz C, Yadav A, Shatkhin M, Flitsiyan E, Chernyak L, Kasiyan V, Liu L, Xi YY, Ren F, Pearton SJ, Lo CF, Johnson JW, Danilova E. Gamma irradiation impact on electronic carrier transport in AlGaN/GaN high electron mobility transistors Applied Physics Letters. 102. DOI: 10.1063/1.4792240  0.368
2013 Yeh N, Chiu P, Chyi J, Ren F, Pearton SJ. Sb-based semiconductors for low power electronics Journal of Materials Chemistry C. 1: 4616. DOI: 10.1039/C3Tc30585F  0.327
2013 Polyakov AY, Pearton SJ, Frenzer P, Ren F, Liu L, Kim JH. Radiation effects in GaN materials and devices Journal of Materials Chemistry C. 1: 877-887. DOI: 10.1039/C2Tc00039C  0.339
2013 Park JC, Jeong OG, Kim JK, Yun Y, Pearton SJ, Cho H. Comparison of chlorine- and fluorine-based inductively coupled plasmas for dry etching of InGaZnO4 films Thin Solid Films. 546: 136-140. DOI: 10.1016/J.Tsf.2013.05.031  0.354
2013 Lo CF, Xi Y, Liu L, Pearton SJ, Doré S, Hsu CH, Dabiran AM, Chow PP, Ren F. Effect of temperature on CO sensing response in air ambient by using zno nanorod-gated AlGaN/GaN high electron mobility transistors Sensors and Actuators, B: Chemical. 176: 708-712. DOI: 10.1016/J.Snb.2012.10.051  0.361
2012 Heo YW, Pearton SJ, Norton DP. Size-dependent electrical conductivity of indium zinc oxide deposited by RF magnetron sputtering. Journal of Nanoscience and Nanotechnology. 12: 3264-7. PMID 22849102 DOI: 10.1166/Jnn.2012.5635  0.329
2012 Pearton SJ, Lim WT, Douglas E, Cho H, Ren F. Flexible Electronics Based on InGaZnO Transparent Thin Film Transistors Key Engineering Materials. 521: 141-151. DOI: 10.4028/Www.Scientific.Net/Kem.521.141  0.792
2012 Cheney DJ, Douglas EA, Liu L, Lo CF, Gila BP, Ren F, Pearton SJ. Degradation mechanisms for GaN and GaAs high speed transistors Materials. 5: 2498-2520. DOI: 10.3390/Ma5122498  0.676
2012 Ren F, Pearton SJ, Liu L, Kang T, Douglas EA, Chang CY, Lo C, Cullen DA, Zhou L, Smith DJ. The Effects of Device Dimension, Substrate Temperature, and Gate Metallization on the Reliability of AlGaN/GaN High Electron Mobility Transistors Mrs Proceedings. 1396. DOI: 10.1557/Opl.2012.354  0.688
2012 Cheney D, Deist R, Gila B, Ren F, Whiting P, Navales J, Douglas E, Pearton S. Determination of AlGaN/GaN HEMT reliability using optical pumping as a characterization method Materials Research Society Symposium Proceedings. 1432: 143-149. DOI: 10.1557/Opl.2012.1138  0.321
2012 Polyakov AY, Smirnov NB, Govorkov AV, Kozhukhova EA, Pearton SJ, Ren F, Yu S, Karpov, Shcherbachev KD, Lim W. Admittance Spectra Studies of Quantum Well States in AlGaN/AlN/GaN Heterojunctions Ecs Journal of Solid State Science and Technology. 1. DOI: 10.1149/2.019203Jss  0.659
2012 Polyakov AY, Smirnov NB, Govorkov AV, Kozhukhova EA, Pearton SJ, Ren F, Liu L, Johnson JW, Lim W, Kolin NG, Veryovkin SS, Ermakov VS. Comparison of neutron irradiation effects in AlGaN/AlN/GaN, AlGaN/GaN, and InAlN/GaN heterojunctions Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.4766727  0.683
2012 Johnson MR, Cullen DA, Liu L, Sheng Kang T, Ren F, Chang C, Pearton SJ, Jang S, Johnson JW, Smith DJ. Transmission electron microscopy characterization of electrically stressed AlGaN/GaN high electron mobility transistor devices Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30: 062204. DOI: 10.1116/1.4766303  0.373
2012 Douglas EA, Stevens J, Fishgrab K, Ford C, Shul RJ, Pearton SJ. Low-pressure inductively coupled plasma etching of benzocyclobutene with SF6/O2 plasma chemistry Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30: 06FF06. DOI: 10.1116/1.4758765  0.65
2012 Wei Chen C, Ren F, Chi G, Hung S, Huang YP, Kim J, Kravchenko II, Pearton SJ. UV ozone treatment for improving contact resistance on graphene Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30: 060604. DOI: 10.1116/1.4754566  0.34
2012 Wang X, Lo CF, Liu L, Cuervo CV, Fan R, Pearton SJ, Gila B, Johnson MR, Zhou L, Smith DJ, Kim J, Laboutin O, Cao Y, Johnson JW. 193 nm excimer laser lift-off for AlGaN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.4751278  0.37
2012 Jung Y, Hyun Kim S, Kim J, Wang X, Ren F, Jin Choi K, Pearton SJ. GaN-based light-emitting diodes by laser lift-off with micro- and nano-sized reflectors Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 30: 050605. DOI: 10.1116/1.4739769  0.332
2012 Lo C, Liu L, Ren F, Pearton SJ, Gila BP, Kim H, Kim J, Laboutin O, Cao Y, Johnson JW, Kravchenko II. Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors [J. Vac. Sci. Technol. B 30, 041206 (2012)] Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30: 043401. DOI: 10.1116/1.4737150  0.32
2012 Hung S, Chang C, Chen CC, Lo CF, Ren F, Pearton SJ, Kravchenko II. SnO2-gated AlGaN/GaN high electron mobility transistors based oxygen sensors Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30: 041214. DOI: 10.1116/1.4736974  0.344
2012 Chen CW, Ren F, Chi G, Hung SC, Huang YP, Kim J, Kravchenko I, Pearton SJ. Effects of semiconductor processing chemicals on conductivity of graphene Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30: 040602. DOI: 10.1116/1.4732517  0.318
2012 Polyakov AY, Smirnov NB, Govorkov AV, Kozhukhova EA, Pearton SJ, Ren F, Karpov SY, Shcherbachev KD, Kolin NG, Lim W. Metastable centers in AlGaN/AlN/GaN heterostructures Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30: 41209. DOI: 10.1116/1.4731256  0.677
2012 Lo CF, Liu L, Ren F, Pearton SJ, Gila BP, Kim HY, Kim J, Laboutin O, Cao Y, Johnson JW, Kravchenko II. Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.4729285  0.356
2012 Lee I, Polyakov AY, Smirnov NB, Govorkov AV, Kozhukhova EA, Zaletin VM, Gazizov IM, Kolin NG, Pearton SJ. Electrical properties and radiation detector performance of free-standing bulk n-GaN Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30: 21205. DOI: 10.1116/1.3690644  0.396
2012 Kim H, Kim J, Liu L, Lo C, Ren F, Pearton SJ. Effects of proton irradiation energies on degradation of AlGaN/GaN high electron mobility transistors Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30: 012202. DOI: 10.1116/1.3676034  0.342
2012 Lo CF, Liu L, Chu BH, Ren F, Pearton SJ, Doré S, Hsu CH, Kim J, Dabiran AM, Chow PP. Carbon monoxide detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors in different temperature environments Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.3672010  0.369
2012 Lo CF, Liu L, Kang TS, Ren F, Laboutin O, Cao Y, Johnson JW, Polyakov AY, Smirnov NB, Govorkov AV, Belogorokhov IA, Belogorokhov AI, Pearton SJ. Effect of buffer layer structure on electrical and structural properties of AlGaN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.3671020  0.396
2012 Kang TS, Wang XT, Lo CF, Ren F, Pearton SJ, Laboutin O, Cao Y, Johnson JW, Kim J. Simulation and experimental study of ArF 193 nm laser lift-off AlGaN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.3664283  0.347
2012 Wang SY, Chang CA, Chang CM, Chen SH, Ren F, Pearton SJ, Chyi J-. Investigation of emitter size effect in InP/InGaAsSb/InGaAs double heterojunction bipolar transistors Applied Physics Letters. 101: 73507. DOI: 10.1063/1.4745208  0.347
2012 Kim BJ, Lee C, Mastro MA, Hite JK, Eddy CR, Ren F, Pearton SJ, Kim J. Buried graphene electrodes on GaN-based ultra-violet light-emitting diodes Applied Physics Letters. 101. DOI: 10.1063/1.4733981  0.325
2012 Jung Y, Wang X, Kim J, Hyun Kim S, Ren F, Pearton SJ. GaN-based light-emitting diodes on origami substrates Applied Physics Letters. 100. DOI: 10.1063/1.4726123  0.339
2012 Wang XJ, Chen WM, Ren F, Pearton S, Buyanova IA. Effects of P implantation and post-implantation annealing on defect formation in ZnO Journal of Applied Physics. 111: 043520. DOI: 10.1063/1.3687919  0.305
2012 Kim H, Lo CF, Liu L, Ren F, Kim J, Pearton SJ. Proton-irradiated InAlN/GaN high electron mobility transistors at 5, 10, and 15 MeV energies Applied Physics Letters. 100: 012107. DOI: 10.1063/1.3673906  0.337
2012 Cho H, Douglas EA, Gila BP, Craciun V, Lambers ES, Ren F, Pearton SJ. Band offsets in HfO2/InGaZnO4 heterojunctions Applied Physics Letters. 100: 012105. DOI: 10.1063/1.3673905  0.648
2012 Shin J, Choi K, Noh K, Park D, Sohn K, Cho G, Song H, Lee J, Pearton S. Selective etching of GaAs over Al0.2Ga0.8As semiconductor in pulsed DC BCl3/SF6 plasmas Thin Solid Films. 521: 245-248. DOI: 10.1016/J.Tsf.2011.10.205  0.32
2012 Kim H, Lim W, Lee J, Pearton S, Ren F, Jang S. Highly sensitive AlGaN/GaN diode-based hydrogen sensors using platinum nanonetworks Sensors and Actuators B: Chemical. 164: 64-68. DOI: 10.1016/J.Snb.2012.01.067  0.656
2012 Cheney DJ, Deist R, Gila B, Navales J, Ren F, Pearton SJ. Trap detection in electrically stressed AlGaN/GaN HEMTs using optical pumping Microelectronics Reliability. 52: 2884-2888. DOI: 10.1016/J.Microrel.2012.08.018  0.33
2012 Whiting PG, Rudawski NG, Holzworth MR, Pearton SJ, Jones KS, Liu L, Kang TS, Ren F. Under-gate defect formation in Ni-gate AlGaN/GaN high electron mobility transistors Microelectronics Reliability. 52: 2542-2546. DOI: 10.1016/J.Microrel.2012.05.015  0.394
2012 Douglas EA, Chang CY, Gila BP, Holzworth MR, Jones KS, Liu L, Kim J, Jang S, Via GD, Ren F, Pearton SJ. Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Transistors Microelectronics Reliability. 52: 23-28. DOI: 10.1016/J.Microrel.2011.09.018  0.685
2012 Hung ST, Chang CJ, Hsu CH, Chu BH, Lo CF, Hsu CC, Pearton SJ, Holzworth MR, Whiting PG, Rudawski NG, Jones KS, Dabiran A, Chow P, Ren F. SnO 2 functionalized AlGaN/GaN high electron mobility transistor for hydrogen sensing applications International Journal of Hydrogen Energy. 37: 13783-13788. DOI: 10.1016/J.Ijhydene.2012.03.124  0.428
2012 Jung Y, Wang X, Kim SH, Ren F, Kim J, Pearton SJ. A facile method for flexible GaN-based light-emitting diodes Physica Status Solidi (Rrl) - Rapid Research Letters. 6: 421-423. DOI: 10.1002/Pssr.201206374  0.318
2011 Jung Y, Ahn J, Baik KH, Kim D, Pearton SJ, Ren F, Kim J. Chemical Etch Characteristics of N-Face and Ga-Face GaN by Phosphoric Acid and Potassium Hydroxide Solutions Journal of the Electrochemical Society. 159: H117-H120. DOI: 10.1149/2.039202Jes  0.605
2011 Douglas EA, Pearton SJ, Poling B, Via GD, Liu L, Ren F. Effect of Drain Bias on Degradation of AlGaN/GaN High Electron Mobility Transistors under X-Band Operation Electrochemical and Solid State Letters. 14. DOI: 10.1149/2.019111Esl  0.652
2011 Lee I, Polyakov AY, Smirnov NB, Govorkov AV, Kozhukhova EA, Kolin NG, Boiko VM, Korulin AV, Pearton SJ. Carrier Removal Rates and Deep Traps in Neutron Irradiated n-GaN Films Journal of the Electrochemical Society. 158: H866. DOI: 10.1149/1.3607986  0.331
2011 Chu BH, Nicolosi J, Lo CF, Strupinski W, Pearton SJ, Ren F. Effect of Coated Platinum Thickness on Hydrogen Detection Sensitivity of Graphene-Based Sensors Electrochemical and Solid-State Letters. 14: K43. DOI: 10.1149/1.3589250  0.304
2011 Lo C, Liu L, Kang T, Davies R, Gila BP, Pearton SJ, Kravchenko II, Laboutin O, Cao Y, Johnson WJ, Ren F. Improvement of Off-State Stress Critical Voltage by Using Pt-Gated AlGaN/GaN High Electron Mobility Transistors Electrochemical and Solid-State Letters. 14: H264. DOI: 10.1149/1.3578388  0.345
2011 Lim W, Jeong J, Lee H, Lee J, Hur S, Ryu J, Kim K, Kim T, Song SY, Hur W, Kim ST, Pearton SJ. Normally-Off Operation of Recessed-Gate AlGaN/GaN HFETs for High Power Applications Electrochemical and Solid State Letters. 14. DOI: 10.1149/1.3555069  0.622
2011 Hung SC, Chen CW, Shieh CY, Chi GC, Ren F, Pearton SJ. Characteristics of CO sensors made by polar and nonpolar ZnO nanowires gated AlGaN/GaN high electron mobility transistor Proceedings of Spie. 8024. DOI: 10.1117/12.883015  0.383
2011 Liu L, Ren F, Pearton SJ, Fitch RC, Walker DE, Chabak KD, Gillespie JK, Kossler M, Trejo M, Via D, Crespo A. Investigating the effect of off-state stress on trap densities in AlGaN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3660396  0.37
2011 Fitch RC, Walker DE, Chabak KD, Gillespie JK, Kossler M, Trejo M, Crespo A, Liu L, Kang TS, Lo CF, Ren F, Cheney DJ, Pearton SJ. Comparison of passivation layers for AlGaN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3656390  0.4
2011 Lo CF, Liu L, Ren F, Kim HY, Kim J, Pearton SJ, Laboutin O, Cao Y, Johnson JW, Kravchenko II. Effects of proton irradiation on dc characteristics of InAlN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3644480  0.368
2011 Liu L, Lo C, Kang T, Ren F, Pearton SJ, Kravchenko II, Laboutin O, Cao Y, Johnson WJ. Comparison of DC performance of Pt/Ti/Au- and Ni/Au-gated AlGaN/GaN high electron mobility transistors Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 29: 042202. DOI: 10.1116/1.3607601  0.362
2011 Lo CF, Ren F, Pearton SJ, Polyakov AY, Smirnov NB, Govorkov AV, Belogorokhov IA, Belogorokhov AI, Reznik VY, Johnson JW. Deep traps and thermal measurements on AlGaN/GaN on Si transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3605304  0.413
2011 Kang TS, Lo CF, Liu L, Finch R, Ren F, Wang XT, Douglas E, Pearton SJ, Hung ST, Chang C. Thermal simulation of laser lift-off AlGaN/GaN high electron mobility transistors mounted on AlN substrates Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 29: 041202. DOI: 10.1116/1.3605298  0.69
2011 Lee I, Polyakov AY, Smirnov NB, Govorkov AV, Kozhukhova EA, Kolin NG, Boiko VM, Korulin AV, Pearton SJ. Deep electron and hole traps in neutron transmutation doped n-GaN Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 29: 41201. DOI: 10.1116/1.3596571  0.377
2011 Lo CF, Kang TS, Liu L, Ren F, Pearton SJ, Kim J, Jang S, Laboutin O, Cao Y, Johnson JW. Effects of silicon nitride passivation on isolation-blocking voltage in algan/gan high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3593002  0.395
2011 Lo CF, Ren F, Chang CY, Pearton SJ, Chen S-, Chang C-, Wang S-, Chyi J-, Kravchenko II. Fabrication of InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors Journal of Vacuum Science & Technology B. 29: 31205. DOI: 10.1116/1.3589808  0.348
2011 Liu L, Kang TS, Cullen DA, Zhou L, Kim J, Chang CY, Douglas EA, Jang S, Smith DJ, Pearton SJ, Johnson WJ, Ren F. Effect of source field plate on the characteristics of off-state, step-stressed AlGaN/GaN high electron mobility transistors Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 29: 32204. DOI: 10.1116/1.3581078  0.667
2011 Choi KH, Lee SH, Park JH, Sohn KY, Lee JW, Pearton SJ. Dry etching of GaAs in asymmetric bipolar pulsed dc BCl3 plasmas Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 29: 30601. DOI: 10.1116/1.3574369  0.341
2011 Douglas EA, Ren F, Pearton SJ. Finite-element simulations of the effect of device design on channel temperature for AlGaN/GaN high electron mobility transistors Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 29: 020603. DOI: 10.1116/1.3567183  0.678
2011 Lee KC, Jo K, Sung S, Lee J, Kim J, Jeong B, Pearton SJ, Norton DP, Heo Y. Low temperature processing of indium-tin-zinc oxide channel layers in fabricating thin-film transistors Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 29: 021008. DOI: 10.1116/1.3553205  0.421
2011 Lo CF, Liu L, Chang CY, Ren F, Craciun V, Pearton SJ, Heo YW, Laboutin O, Johnson JW. Annealing temperature dependence of Ohmic contact resistance and morphology on InAlN/GaN high electron mobility transistor structures Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3545811  0.437
2011 Chang CY, Douglas EA, Kim J, Lu L, Lo CF, Chu BH, Cheney DJ, Gila BP, Ren F, Via GD, Cullen DA, Zhou L, Smith DJ, Jang S, Pearton SJ. Electric-field-driven degradation in off-state step-stressed AlGaN/GaN high-electron mobility transistors Ieee Transactions On Device and Materials Reliability. 11: 187-193. DOI: 10.1109/Tdmr.2010.2103314  0.667
2011 Chen CW, Hung SC, Yang MD, Yeh CW, Wu CH, Chi GC, Ren F, Pearton SJ. Oxygen sensors made by monolayer graphene under room temperature Applied Physics Letters. 99: 243502. DOI: 10.1063/1.3668105  0.304
2011 Polyakov AY, Jang LW, Smirnov NB, Govorkov AV, Kozhukhova EA, Yugova TG, Reznik VY, Pearton SJ, Baik KH, Hwang SM, Jung S, Lee IH. Characteristics of a-GaN films and a-AlGaN/GaN heterojunctions prepared on r-sapphire by two-stage growth process Journal of Applied Physics. 110: 93709. DOI: 10.1063/1.3658026  0.64
2011 Lo CF, Chu BH, Pearton SJ, Dabiran A, Chow PP, Doré S, Hung SC, Chen CW, Ren F. Effect of temperature on CO detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors Applied Physics Letters. 99. DOI: 10.1063/1.3647561  0.365
2011 Douglas EA, Scheurmann A, Davies RP, Gila BP, Cho H, Craciun V, Lambers ES, Pearton SJ, Ren F. Erratum: “Measurement of SiO2/InZnGaO4 heterojunction band offsets by x-ray photoelectron spectroscopy” [Appl. Phys. Lett. 98, 242110 (2011)] Applied Physics Letters. 99: 059901. DOI: 10.1063/1.3617417  0.58
2011 Douglas EA, Scheurmann A, Davies RP, Gila BP, Cho H, Craciun V, Lambers ES, Pearton SJ, Ren F. Measurement of SiO2/InZnGaO4 heterojunction band offsets by x-ray photoelectron spectroscopy Applied Physics Letters. 98: 242110. DOI: 10.1063/1.3600340  0.638
2011 Polyakov AY, Lee I, Smirnov NB, Govorkov AV, Kozhukhova EA, Pearton SJ. Comparison of hole traps in n-GaN grown by hydride vapor phase epitaxy, metal organic chemical vapor deposition, and epitaxial lateral overgrowth Journal of Applied Physics. 109: 123701. DOI: 10.1063/1.3599894  0.369
2011 Johnson JL, Behnam A, An Y, Pearton SJ, Ural A. Experimental study of graphitic nanoribbon films for ammonia sensing Journal of Applied Physics. 109. DOI: 10.1063/1.3597635  0.328
2011 Polyakov AY, Lee I, Smirnov NB, Govorkov AV, Kozhukhova EA, Kolin NG, Korulin AV, Boiko VM, Pearton SJ. 10 MeV electrons irradiation effects in variously doped n-GaN Journal of Applied Physics. 109: 123703. DOI: 10.1063/1.3596819  0.381
2011 Hung SC, Chen CW, Shieh CY, Chi GC, Fan R, Pearton SJ. High sensitivity carbon monoxide sensors made by zinc oxide modified gated GaN/AlGaN high electron mobility transistors under room temperature Applied Physics Letters. 98: 223504. DOI: 10.1063/1.3596440  0.381
2011 Lee I, Polyakov AY, Smirnov NB, Govorkov AV, Kozhukhova EA, Yakimov EB, Kolin NG, Boiko VM, Korulin AV, Pearton SJ. Neutron doping effects in epitaxially laterally overgrown n-GaN Applied Physics Letters. 98: 212107. DOI: 10.1063/1.3593957  0.38
2011 Holzworth MR, Rudawski NG, Pearton SJ, Jones KS, Lu L, Kang TS, Ren F, Johnson JW. Characterization of the gate oxide of an AlGaN/GaN high electron mobility transistor Applied Physics Letters. 98. DOI: 10.1063/1.3569715  0.33
2011 Polyakov AY, Smirnov NB, Govorkov AV, Amano H, Pearton SJ, Lee I, Sun Q, Han J, Karpov SY. Role of nonradiative recombination centers and extended defects in nonpolar GaN on light emission efficiency Applied Physics Letters. 98: 072104. DOI: 10.1063/1.3555470  0.369
2011 Socol G, Craciun D, Mihailescu I, Stefan N, Besleaga C, Ion L, Antohe S, Kim K, Norton D, Pearton S, Galca A, Craciun V. High quality amorphous indium zinc oxide thin films synthesized by pulsed laser deposition Thin Solid Films. 520: 1274-1277. DOI: 10.1016/J.Tsf.2011.04.196  0.366
2011 Chu BH, Lo C, Nicolosi J, Chang C, Chen V, Strupinski W, Pearton S, Ren F. Hydrogen detection using platinum coated graphene grown on SiC Sensors and Actuators B: Chemical. 157: 500-503. DOI: 10.1016/J.Snb.2011.05.007  0.351
2011 Douglas EA, Chang CY, Cheney DJ, Gila BP, Lo CF, Lu L, Holzworth R, Whiting P, Jones K, Via GD, Kim J, Jang S, Ren F, Pearton SJ. AlGaN/GaN high electron mobility transistor degradation under on- and off-state stress Microelectronics Reliability. 51: 207-211. DOI: 10.1016/J.Microrel.2010.09.024  0.654
2010 Chu BH, Wang YL, Chen KH, Chang CY, Lo CF, Pearton SJ, Papadi G, Coleman JK, Sheppard BJ, Dungen CF, Kroll K, Denslow N, Dabiran A, Chow PP, Johnson JW, et al. AlGaN/GaN high-electron mobility transistor-based sensors for environmental and bio-applications Proceedings of Spie - the International Society For Optical Engineering. 7679. DOI: 10.1166/Nnl.2010.1068  0.301
2010 Chu M, Kim S, Sung S, Lee J, Kim J, Norton DP, Pearton SJ, Heo Y. Catalyst-Free Patterned Growth of Well-Aligned ZnO Nanowires on ITO Substrates Using an Aqueous Solution Method and Lithography Process Journal of Nanoelectronics and Optoelectronics. 5: 186-190. DOI: 10.1166/Jno.2010.1090  0.353
2010 Jung Y, Baik KH, Ren F, Pearton SJ, Kim J. Effects of Photoelectrochemical Etching of N-Polar and Ga-Polar Gallium Nitride on Sapphire Substrates Journal of the Electrochemical Society. 157: H676. DOI: 10.1149/1.3384713  0.609
2010 Ko G, Kim H, Ren F, Pearton SJ, Kim J. Electrical Characterization of 5 MeV Proton-Irradiated Few Layer Graphene Electrochemical and Solid-State Letters. 13: K32. DOI: 10.1149/1.3290777  0.326
2010 Polyakov AY, Markov AV, Mezhennyi MV, Donskov AA, Malakhov SS, Govorkov AV, Kozlova YP, Pavlov VF, Smirnov NB, Yugova TG, Lee I, Han J, Sun Q, Pearton SJ. a-plane GaN hydride vapor phase epitaxy on a-plane GaN templates with and without use of TiN intermediate layers Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28: 1039-1043. DOI: 10.1116/1.3491187  0.389
2010 Chang CY, Anderson T, Hite J, Lu L, Lo CF, Chu BH, Cheney DJ, Douglas EA, Gila BP, Ren F, Via GD, Whiting P, Holzworth R, Jones KS, Jang S, ... Pearton SJ, et al. Reverse gate bias-induced degradation of AlGaN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: 1044-1047. DOI: 10.1116/1.3491038  0.678
2010 Polyakov AY, Markov AV, Duhnovsky MP, Mezhennyi MV, Donskov AA, Malakhov SS, Govorkov AV, Kozlova YP, Pavlov VF, Smirnov NB, Yugova TG, Belogorokhov AI, Belogorokhov IA, Ratnikova AK, Fyodorov YY, ... ... Pearton SJ, et al. GaN epitaxial films grown by hydride vapor phase epitaxy on polycrystalline chemical vapor deposition diamond substrates using surface nanostructuring with TiN or anodic Al oxide Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28: 1011-1015. DOI: 10.1116/1.3488616  0.378
2010 Lo CF, Chang CY, Chu BH, Kim H, Kim J, Cullen DA, Zhou L, Smith DJ, Pearton SJ, Dabiran A, Cui B, Chow PP, Jang S, Ren F. Proton irradiation effects on AlN/GaN high electron mobility transistors Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28: L47-L51. DOI: 10.1116/1.3482335  0.363
2010 Khanna R, Douglas EA, Norton DP, Pearton SJ, Ren F. Ti/Au Ohmic contacts to indium zinc oxide thin films on paper substrates Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28: L43-L46. DOI: 10.1116/1.3467507  0.703
2010 Polyakov AY, Smirnov NB, Govorkov AV, Kolin NG, Merkurisov DI, Boiko VM, Korulin AV, Pearton SJ. Neutron transmutation doping effects in GaN Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28: 608-612. DOI: 10.1116/1.3431083  0.401
2010 Wang YL, Chang CY, Lim W, Pearton SJ, Norton DP, Chu BH, Lo CF, Ren F, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ. Oxygen gas sensing at low temperature using indium zinc oxide-gated AlGaN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: 376-379. DOI: 10.1116/1.3368467  0.677
2010 Chen KH, Chang CY, Leu LC, Lo CF, Chu BH, Pearton SJ, Ren F. Degradation of 150 nm mushroom gate InAlAs/InGaAs metamorphic high electron mobility transistors during dc stressing and thermal storage Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28: 365-370. DOI: 10.1116/1.3359603  0.371
2010 Lo CF, Chang CY, Pearton SJ, Kravchenko II, Dabiran AM, Wowchak AM, Cui B, Chow PP, Ren F. Passivation of AlN∕GaN high electron mobility transistor using ozone treatment Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28: 52-55. DOI: 10.1116/1.3271333  0.373
2010 Wright JS, Lim W, Norton DP, Pearton SJ, Ren F, Johnson JL, Ural A. Nitride and oxide semiconductor nanostructured hydrogen gas sensors Semiconductor Science and Technology. 25: 024002. DOI: 10.1088/0268-1242/25/2/024002  0.664
2010 Baik KH, Seo YG, Kim J, Hwang S, Lim W, Chang CY, Pearton SJ, Ren F, Jang S. Ohmic contact properties of non-polara-plane GaN films onr-plane sapphire substrates Journal of Physics D: Applied Physics. 43: 295102. DOI: 10.1088/0022-3727/43/29/295102  0.748
2010 Lo CF, Kang TS, Liu L, Chang CY, Pearton SJ, Kravchenko II, Laboutin O, Johnson JW, Ren F. Isolation blocking voltage of nitrogen ion-implanted AlGaN/GaN high electron mobility transistor structure Applied Physics Letters. 97. DOI: 10.1063/1.3533381  0.364
2010 Lim W, Jeong J, Lee J, Hur S, Ryu J, Kim K, Kim T, Song SY, Yang J, Pearton SJ. Temperature dependence of current-voltage characteristics of Ni–AlGaN/GaN Schottky diodes Applied Physics Letters. 97: 242103. DOI: 10.1063/1.3525931  0.677
2010 Sung S, Kim S, Jo K, Lee J, Kim J, Kim S, Chai K, Pearton SJ, Norton DP, Heo Y. Fabrication of p-channel thin-film transistors using CuO active layers deposited at low temperature Applied Physics Letters. 97: 222109. DOI: 10.1063/1.3521310  0.388
2010 Zhou L, Chang CY, Pearton SJ, Ren F, Dabiran A, Smith DJ. TiAlNiAu contacts for ultrathin AlN/GaN high electron mobility transistor structures Journal of Applied Physics. 108: 84513. DOI: 10.1063/1.3501106  0.413
2010 Lo CF, Chang CY, Chu BH, Pearton SJ, Dabiran A, Chow PP, Ren F. Effect of humidity on hydrogen sensitivity of Pt-gated AlGaN/GaN high electron mobility transistor based sensors Applied Physics Letters. 96: 232106. DOI: 10.1063/1.3454279  0.326
2010 Davies RP, Gila BP, Abernathy CR, Pearton SJ, Stanton CJ. Defect-enhanced ferromagnetism in Gd- and Si-coimplanted GaN Applied Physics Letters. 96: 212502. DOI: 10.1063/1.3437085  0.402
2010 Sung SY, Choi JH, Han UB, Lee KC, Lee JH, Kim JJ, Lim W, Pearton SJ, Norton DP, Heo YW. Effects of ambient atmosphere on the transfer characteristics and gate-bias stress stability of amorphous indium-gallium-zinc oxide thin-film transistors Applied Physics Letters. 96. DOI: 10.1063/1.3357431  0.681
2010 Lim W, Douglas EA, Norton DP, Pearton SJ, Ren F, Heo YW, Son SY, Yuh JH. Low-voltage indium gallium zinc oxide thin film transistors on paper substrates Applied Physics Letters. 96. DOI: 10.1063/1.3309753  0.793
2010 Polyakov AY, Smirnov NB, Govorkov AV, Kozhukhova EA, Dabiran AM, Chow PP, Wowchak AM, Pearton SJ. Electrical and optical properties of Fe doped AlGaN grown by molecular beam epitaxy Journal of Applied Physics. 107: 023708. DOI: 10.1063/1.3285408  0.366
2010 Hung S, Nafday OA, Haaheim JR, Ren F, Chi GC, Pearton SJ. Dip Pen Nanolithography of Conductive Silver Traces The Journal of Physical Chemistry C. 114: 9672-9677. DOI: 10.1021/Jp101505K  0.313
2010 Chen CW, Pan CJ, Tsao FC, Liu YL, Kuo CW, Kuo CH, Chi GC, Chen PH, Lai WC, Hsueh TH, Tun CJ, Chang CY, Pearton SJ, Ren F. Catalyst-free ZnO nanowires grown on a-plane GaN Vacuum. 84: 803-806. DOI: 10.1016/J.Vacuum.2009.10.043  0.373
2010 Park J, Lee S, Choi K, Noh H, Lee J, Pearton S. Comparison of dry etching of PMMA and polycarbonate in diffusion pump-based O2 capacitively coupled plasma and inductively coupled plasma Thin Solid Films. 518: 6465-6468. DOI: 10.1016/J.Tsf.2010.02.053  0.318
2010 Lee J, Noh H, Lee S, Park J, Choi K, Pearton S. Dry etching process of GaAs in capacitively coupled BCl3-based plasmas Thin Solid Films. 518: 6488-6491. DOI: 10.1016/J.Tsf.2010.02.003  0.34
2010 Pearton SJ, Ren F, Wang Y, Chu BH, Chen KH, Chang CY, Lim W, Lin J, Norton DP. Recent advances in wide bandgap semiconductor biological and gas sensors Progress in Materials Science. 55: 1-59. DOI: 10.1016/J.Pmatsci.2009.08.003  0.642
2010 Wang Y, Ren F, Lim W, Pearton S, Baik KH, Hwang S, Gon Seo Y, Jang S. Hydrogen sensing characteristics of non-polar a-plane GaN Schottky diodes Current Applied Physics. 10: 1029-1032. DOI: 10.1016/J.Cap.2009.12.034  0.739
2010 Chang CY, Lo CF, Ren F, Pearton SJ, Kravchenko II, Dabiran AM, Cui B, Chow PP. Normally-on/off AlN/GaN high electron mobility transistors Physica Status Solidi (C). 7: 2415-2418. DOI: 10.1002/Pssc.200983901  0.39
2010 Pearton SJ, Polyakov AY. Role of Hydrogen in the CVD of Wide Bandgap Nitride Semiconductors Chemical Vapor Deposition. 16: 266-274. DOI: 10.1002/Cvde.201000041  0.377
2009 Anderson T, Ren F, Pearton S, Kang BS, Wang HT, Chang CY, Lin J. Advances in Hydrogen, Carbon Dioxide, and Hydrocarbon Gas Sensor Technology Using GaN and ZnO-Based Devices. Sensors (Basel, Switzerland). 9: 4669-94. PMID 22408548 DOI: 10.3390/S90604669  0.35
2009 Wang Y, Chu BH, Chen KH, Chang C, Lele TP, Papadi G, Coleman JK, Sheppard BJ, Dungan CF, Pearton SJ, Johnson JW, Ren F. Fast Detection of Perkinsus Marinus, a Prevalent Pathogen of Oysters and Clams from Sea Waters Mrs Proceedings. 1202. DOI: 10.1557/Proc-1202-I09-10  0.302
2009 Wang Y, Chu B, Chang C, Chen KH, Zhang Y, Sun Q, Han J, Pearton S, Ren F. High Sensitivity of Hydrogen Sensing Through N-polar GaN Schottky Diodes Mrs Proceedings. 1202. DOI: 10.1557/Proc-1202-I06-06  0.391
2009 Chu BH, Lin H, Gwo S, Wang Y, Pearton SJ, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ, Ren F. Chloride Ion Detection by InN Gated AlGaN/GaN High Electron Mobility Transistors Mrs Proceedings. 1202. DOI: 10.1557/Proc-1202-I06-05  0.331
2009 Hung S, Chu BH, Chang C, Lo CF, Chen KH, Pearton SJ, Dabiran A, Chow PP, Chi GC, Ren F. Pressure Sensing with PVDF Gated AlGaN/GaN High Electron Mobility Transistor Mrs Proceedings. 1202. DOI: 10.1557/Proc-1202-I06-03  0.358
2009 Pearton SJ, Ren F, Wang Y, Chu BH, Chen KH, Chang CY, Lim W, Lin J. Recent Advances in Wide Bandgap Semiconductor Biological and Gas Sensors Mrs Proceedings. 1202. DOI: 10.1557/Proc-1202-I06-01  0.642
2009 Douglas EA, Cheney DP, Chen KHP, Chang CP, Leu LP, Gila BP, Abernathy CR, Pearton SJ. GaAs HEMT Reliability and Degradation Mechanisms after Long Term Stress Testing Mrs Proceedings. 1195. DOI: 10.1557/Proc-1195-B05-04  0.656
2009 Cheney D, Gila B, Douglas EA, Ren F, Pearton S. A Comprehensive Approach to HEMT Reliability Testing Mrs Proceedings. 1195. DOI: 10.1557/Proc-1195-B05-03  0.76
2009 Lugo FJ, Kim HS, Pearton SJ, Abernathy CR, Gila BP, Norton DP, Wang YL, Ren F. Rectifying ZnO:Ag∕ZnO:Ga Thin-Film Junctions Electrochemical and Solid-State Letters. 12: H188. DOI: 10.1149/1.3097392  0.41
2009 Kim H, Ren F, Pearton SJ, Kim J. Self-Annealing in Neutron-Irradiated AlGaN∕GaN High Electron Mobility Transistors Electrochemical and Solid-State Letters. 12: H173. DOI: 10.1149/1.3082498  0.377
2009 Polyakov AY, Smirnov NB, Govorkov AV, Kozhukhova EA, Kim HS, Norton DP, Pearton SJ, Belogorokhov AI. Persistent photoconductivity in MgZnO alloys Semiconductors. 43: 577-580. DOI: 10.1134/S1063782609050054  0.393
2009 Lo CF, Kim H, Kim J, Chen S, Wang S, Chyi J, Chou BY, Chen KH, Wang YL, Chang CY, Pearton SJ, Kravchenko LI, Jang S, Ren F. Proton irradiation effects on Sb-based heterojunction bipolar transistors Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 27: L33. DOI: 10.1116/1.3246405  0.317
2009 Chen KH, Ren F, Pais A, Xie H, Gila BP, Pearton SJ, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ. Cu-plated through-wafer vias for AlGaN/GaN high electron mobility transistors on Si Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27: 2166-2169. DOI: 10.1116/1.3212931  0.352
2009 Lim W, Douglas EA, Lee J, Jang J, Craciun V, Norton DP, Pearton SJ, Ren F, Son SY, Yuh JH, Shen H, Chang W. Transparent dual-gate InGaZnO thin film transistors: Or gate operation Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27: 2128-2131. DOI: 10.1116/1.3196787  0.787
2009 Han SY, Lee J, Pearton SJ. Electrical properties of nanoscale Au contacts on 4H-SiC Journal of Vacuum Science & Technology B. 27: 1870-1873. DOI: 10.1116/1.3154517  0.353
2009 Wright JS, Lim W, Gila BP, Pearton SJ, Ren F, Lai W, Chen L, Hu M, Chen K. Pd-catalyzed hydrogen sensing with InN nanobelts Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 27: L8. DOI: 10.1116/1.3125267  0.629
2009 Wang XJ, Vlasenko LS, Pearton SJ, Chen WM, Buyanova IA. Oxygen and zinc vacancies in as-grown ZnO single crystals Journal of Physics D: Applied Physics. 42: 175411. DOI: 10.1088/0022-3727/42/17/175411  0.35
2009 Davies RP, Abernathy CR, Pearton SJ, Norton DP, Ivill MP, Ren F. REVIEW OF RECENT ADVANCES IN TRANSITION AND LANTHANIDE METAL–DOPED GaN AND ZnO Chemical Engineering Communications. 196: 1030-1053. DOI: 10.1080/00986440902896956  0.334
2009 Polyakov AY, Smirnov NB, Govorkov AV, Markov AV, Kozhukhova EA, Gazizov IM, Kolin NG, Merkurisov DI, Boiko VM, Korulin AV, Zalyetin VM, Pearton SJ, Lee I, Dabiran AM, Chow PP. Alpha particle detection with GaN Schottky diodes Journal of Applied Physics. 106: 103708. DOI: 10.1063/1.3261806  0.405
2009 Herrero AM, Gila BP, Gerger A, Scheuermann A, Davies R, Abernathy CR, Pearton SJ, Ren F. Environmental stability of candidate dielectrics for GaN-based device applications Journal of Applied Physics. 106: 074105. DOI: 10.1063/1.3236568  0.413
2009 Lin Y, Flitsyian E, Chernyak L, Malinauskas T, Aleksiejunas R, Jarasiunas K, Lim W, Pearton SJ, Gartsman K. Optical and electron beam studies of carrier transport in quasibulk GaN Applied Physics Letters. 95: 092101. DOI: 10.1063/1.3220062  0.658
2009 Chang CY, Wang Y, Gila BP, Gerger AP, Pearton SJ, Lo CF, Ren F, Sun Q, Zhang Y, Han J. Effect of gate orientation on dc characteristics of Si-doped, nonpolar AlGaN/GaN metal-oxide semiconductor high electron mobility transistors Applied Physics Letters. 95: 082110. DOI: 10.1063/1.3216576  0.424
2009 Chang CY, Pearton SJ, Lo CF, Ren F, Kravchenko II, Dabiran AM, Wowchak AM, Cui B, Chow PP. Development of enhancement mode AlN/GaN high electron mobility transistors Applied Physics Letters. 94: 263505. DOI: 10.1063/1.3168648  0.365
2009 Lan YL, Lin HC, Liu HH, Lee GY, Ren F, Pearton SJ, Chang MN, Chyi JI. Low-resistance smooth-surface Ti/Al/Cr/Mo/Au n -type Ohmic contact to AlGaN/GaN heterostructures Applied Physics Letters. 94. DOI: 10.1063/1.3155195  0.331
2009 Polyakov AY, Govorkov AV, Smirnov NB, Markov AV, Lee I, Ju J, Karpov SY, Shmidt NM, Pearton SJ. Properties of undoped GaN/InGaN multi-quantum-wells and GaN/InGaN p-n junctions prepared by epitaxial lateral overgrowth Journal of Applied Physics. 105: 123708. DOI: 10.1063/1.3153967  0.374
2009 Wang YL, Chu BH, Chen KH, Chang CY, Lele TP, Papadi G, Coleman JK, Sheppard BJ, Dungen CF, Pearton SJ, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ, et al. Fast detection of a protozoan pathogen, Perkinsus marinus, using AlGaN/GaN high electron mobility transistors Applied Physics Letters. 94. DOI: 10.1063/1.3153130  0.313
2009 Wang Y, Ren F, Zhang U, Sun Q, Yerino CD, Ko TS, Cho YS, Lee IH, Han J, Pearton SJ. Improved hydrogen detection sensitivity in N-polar GaN Schottky diodes Applied Physics Letters. 94: 212108. DOI: 10.1063/1.3148369  0.37
2009 Jang JH, Son SY, Lim W, Phen MS, Siebein K, Pearton SJ, Craciun V. Fabrication of compositional graded Si1−xGex layers by using thermal oxidation Applied Physics Letters. 94: 202104. DOI: 10.1063/1.3139070  0.644
2009 Polyakov AY, Markov AV, Mezhennyi MV, Govorkov AV, Pavlov VF, Smirnov NB, Donskov AA, D’yakonov LI, Kozlova YP, Malakhov SS, Yugova TG, Osinsky VI, Gorokh GG, Lyahova NN, Mityukhlyaev VB, ... Pearton SJ, et al. Nonpolar GaN grown on Si by hydride vapor phase epitaxy using anodized Al nanomask Applied Physics Letters. 94: 022114. DOI: 10.1063/1.3072614  0.348
2009 Hung SC, Chou BH, Chang CY, Lo CF, Chen KH, Wang YL, Pearton SJ, Dabiran A, Chow PP, Chi GC, Ren F. Minipressure sensor using AlGaN/GaN high electron mobility transistors Applied Physics Letters. 94: 43903. DOI: 10.1063/1.3072606  0.34
2009 Pan C, Chen J, Chi G, Chou B, Pong B, Ren F, Chang C, Pearton S. Optical investigation of nitrogen ion implanted bulk ZnO Vacuum. 83: 1073-1075. DOI: 10.1016/J.Vacuum.2009.02.002  0.333
2009 Chen JY, Pan CJ, Tsao FC, Kuo CH, Chi GC, Pong BJ, Chang CY, Norton DP, Pearton SJ. Characterization of ZnO nanowires grown on Si (100) with and without Au catalyst Vacuum. 83: 1076-1079. DOI: 10.1016/J.Vacuum.2009.02.001  0.324
2009 Huang P, Chen C, Chen J, Chi G, Pan C, Kuo C, Chen L, Hsu C, Chen K, Hung S, Chang C, Pearton S, Ren F. Optical and structural properties of Mg-ion implanted GaN nanowires Vacuum. 83: 797-800. DOI: 10.1016/J.Vacuum.2008.07.009  0.373
2009 Yakimov E, Vergeles P, Govorkov A, Polyakov A, Smirnov N, Lee I, Ro Lee C, Pearton S. EBIC and CL studies of ELOG GaN films Superlattices and Microstructures. 45: 308-313. DOI: 10.1016/J.Spmi.2008.09.008  0.303
2009 Wang Y, Chu B, Chang C, Chen K, Zhang Y, Sun Q, Han J, Pearton S, Ren F. Hydrogen sensing of N-polar and Ga-polar GaN Schottky diodes Sensors and Actuators B: Chemical. 142: 175-178. DOI: 10.1016/J.Snb.2009.07.040  0.336
2009 Wright J, Lim W, Gila B, Pearton S, Johnson JL, Ural A, Ren F. Hydrogen sensing with Pt-functionalized GaN nanowires Sensors and Actuators B: Chemical. 140: 196-199. DOI: 10.1016/J.Snb.2009.04.009  0.661
2009 Yakimov E, Vergeles P, Govorkov A, Polyakov A, Smirnov N, Lee I, Lee CR, Pearton S. EBIC investigations of defect distribution in ELOG GaN films Physica B: Condensed Matter. 404: 4916-4918. DOI: 10.1016/J.Physb.2009.08.215  0.362
2009 Pan C, Chen C, Chen J, Huang P, Chi G, Chang C, Ren F, Pearton S. Optical and structural properties of Eu-diffused and doped ZnO nanowires Applied Surface Science. 256: 187-190. DOI: 10.1016/J.Apsusc.2009.07.108  0.374
2009 Hung SC, Huang PJ, Chan CE, Uen WY, Ren F, Pearton SJ, Yang TN, Chiang CC, Lan SM, Chi GC. Surface morphology and optical properties of ZnO epilayers grown on Si(1 1 1) by metal organic chemical vapor deposition Applied Surface Science. 255: 6809-6813. DOI: 10.1016/J.Apsusc.2009.02.088  0.399
2009 Baik KH, Pearton SJ. Dry etching characteristics of GaN for blue/green light-emitting diode fabrication Applied Surface Science. 255: 5948-5951. DOI: 10.1016/J.Apsusc.2009.01.041  0.618
2009 Polyakov AY, Smirnov NB, Govorkov AV, Kozhukhova EA, Belogorokhov AI, Norton DP, Kim HS, Pearton SJ. Shallow and Deep Centers in As-Grown and Annealed MgZnO/ZnO Structures with Quantum Wells Journal of Electronic Materials. 39: 601-607. DOI: 10.1007/S11664-009-0973-2  0.405
2008 Pearton SJ, Kang BS, Gila BP, Norton DP, Kryliouk O, Ren F, Heo YW, Chang CY, Chi GC, Wang WM, Chen LC. GaN, ZnO and InN nanowires and devices. Journal of Nanoscience and Nanotechnology. 8: 99-110. PMID 18468056 DOI: 10.1166/Jnn.2008.N01  0.333
2008 Pearton SJ, Lim WT, Wang YL, Shoo K, Norton D, Lee JW, Ren F, Zavada JM. Transparent Thin Film Transistors Based on InZnO for Flexible Electronics Key Engineering Materials. 380: 99-109. DOI: 10.4028/Www.Scientific.Net/Kem.380.99  0.678
2008 Stewart AD, Scheuermann AG, Gerger AP, Gila BP, Abernathy CR, Pearton SJ. Optimization of Samarium Oxide Deposition on Gallium Arsenide Mrs Proceedings. 1108. DOI: 10.1557/Proc-1108-A10-03  0.398
2008 Pearton S, Voss L, Khanna R, Lim W, Stafford L, Ren F, Dabiran A, Osinsky A. High Temperature Stable Contacts for GaN HEMTs and LEDs Mrs Proceedings. 1108. DOI: 10.1557/Proc-1108-A01-04  0.798
2008 Pearton SJ, Polyakov AY. Effects of radiation damage in GaN and related materials International Journal of Materials and Structural Integrity. 2: 93. DOI: 10.1504/Ijmsi.2008.018902  0.32
2008 Hung SC, Wang YL, Hicks B, Pearton SJ, Ren F, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ, Chi GC. Integration of Selective Area Anodized AgCl Thin Film with AlGaN/GaN HEMTs for Chloride Ion Detection Electrochemical and Solid-State Letters. 11: H241. DOI: 10.1149/1.2938726  0.37
2008 Kim HY, Kim J, Yun SP, Kim KR, Anderson TJ, Ren F, Pearton SJ. AlGaN/GaN high electron mobility transistors irradiated with 17 MeV protons Journal of the Electrochemical Society. 155: H513-H515. DOI: 10.1149/1.2917256  0.353
2008 Wang YL, Lim W, Covert LN, Anderson TJ, Lin J, Pearton SJ, Norton DP, Ren F. Room temperature deposited enhancement mode and depletion mode indium znic oxide thin film transistors Ecs Transactions. 13: 159-164. DOI: 10.1149/1.2913090  0.601
2008 Lim W, Kim S, Wang Y, Lee JW, Norton DP, Pearton SJ, Ren F, Kravchenko II. High-Performance Indium Gallium Zinc Oxide Transparent Thin-Film Transistors Fabricated by Radio-Frequency Sputtering Journal of the Electrochemical Society. 155: H383. DOI: 10.1149/1.2903294  0.7
2008 Wang Y, Kim HS, Norton DP, Pearton SJ, Ren F. Hydrogen Effects on the Optical and Electrical Properties of ZnO Light-Emitting Diodes Electrochemical and Solid-State Letters. 11: H88. DOI: 10.1149/1.2837657  0.392
2008 Wang Y, Covert LN, Anderson TJ, Lim W, Lin J, Pearton SJ, Norton DP, Zavada JM, Ren F. RF Characteristics of Room-Temperature-Deposited, Small Gate Dimension Indium Zinc Oxide TFTs Electrochemical and Solid-State Letters. 11: H60. DOI: 10.1149/1.2825474  0.688
2008 Kang BS, Wang HT, Ren F, Gila BP, Abernathy CR, Pearton SJ, Dennis DM, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ. Exhaled-Breath Detection Using AlGaN∕GaN High Electron Mobility Transistors Integrated with a Peltier Element Electrochemical and Solid-State Letters. 11: J19. DOI: 10.1149/1.2824500  0.332
2008 Donskov AA, D’yakonov LI, Govorkov AV, Kozlova YP, Malakhov SS, Markov AV, Mezhennyi MV, Pavlov VF, Polyakov AY, Smirnov NB, Yugova TG, Pearton SJ. Improved crystalline quality nonpolar a-GaN films grown by hydride vapor phase epitaxy Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 26: 1937-1941. DOI: 10.1116/1.3021367  0.332
2008 Polyakov AY, Smirnov NB, Govorkov AV, Markov AV, Yakimov EB, Vergeles PS, Lee I, Lee CR, Pearton SJ. Effects of laterally overgrown n-GaN thickness on defect and deep level concentrations Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 26: 990. DOI: 10.1116/1.2919148  0.391
2008 Voss LF, Ip K, Pearton SJ, Shul RJ, Overberg ME, Baca AG, Sanchez C, Stevens J, Martinez M, Armendariz MG, Wouters GA. SiC via fabrication for wide-band-gap high electron mobility transistor/microwave monolithic integrated circuit devices Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 487-494. DOI: 10.1116/1.2837849  0.694
2008 Pearton SJ, Norton DP, Tien L, Guo J. Modeling and Fabrication of ZnO Nanowire Transistors Ieee Transactions On Electron Devices. 55: 3012-3019. DOI: 10.1109/Ted.2008.2005157  0.403
2008 Wang Y, Ren F, Kim HS, Norton DP, Pearton SJ. Materials and Process Development for ZnMgO/ZnO Light-Emitting Diodes Ieee Journal of Selected Topics in Quantum Electronics. 14: 1048-1052. DOI: 10.1109/Jstqe.2008.919736  0.41
2008 Ivill M, Pearton SJ, Rawal S, Leu L, Sadik P, Das R, Hebard AF, Chisholm M, Budai JD, Norton DP. Structure and magnetism of cobalt-doped ZnO thin films New Journal of Physics. 10. DOI: 10.1088/1367-2630/10/6/065002  0.359
2008 Hite JK, Allums KK, Thaler GT, Abernathy CR, Pearton SJ, Frazier RM, Dwivedi R, Wilkins R, Zavada JM. Effects of proton irradiation on the magnetic properties of GaGdN and GaCrN New Journal of Physics. 10: 055005. DOI: 10.1088/1367-2630/10/5/055005  0.313
2008 Lim W, Douglas EA, Kim S, Norton DP, Pearton SJ, Ren F, Shen H, Chang WH. Low-temperature-fabricated InGaZnO4 thin film transistors on polyimide clean-room tape Applied Physics Letters. 93: 252103. DOI: 10.1063/1.3054167  0.796
2008 Lim W, Wright JS, Gila BP, Pearton SJ, Ren F, Lai W, Chen L, Hu M, Chen K. Selective-hydrogen sensing at room temperature with Pt-coated InN nanobelts Applied Physics Letters. 93: 202109. DOI: 10.1063/1.3033548  0.663
2008 Chu BH, Leu LC, Chang CY, Lugo F, Norton D, Lele T, Keselowsky B, Pearton SJ, Ren F. Conformable coating of SiO2 on hydrothermally grown ZnO nanorods Applied Physics Letters. 93. DOI: 10.1063/1.3033407  0.365
2008 Polyakov AY, Smirnov NB, Govorkov AV, Markov AV, Pearton SJ, Dabiran AM, Wowchak AM, Cui B, Osinsky AV, Chow PP, Kolin NG, Boiko VM, Merkurisov DI. Electron irradiation of AlGaN∕GaN and AlN∕GaN heterojunctions Applied Physics Letters. 93: 152101. DOI: 10.1063/1.3000613  0.374
2008 Lim W, Jang JH, Kim S, Norton DP, Craciun V, Pearton SJ, Ren F, Shen H. High performance indium gallium zinc oxide thin film transistors fabricated on polyethylene terephthalate substrates Applied Physics Letters. 93: 082102. DOI: 10.1063/1.2975959  0.697
2008 Lim W, Wright JS, Gila BP, Johnson JL, Ural A, Anderson T, Ren F, Pearton SJ. Room temperature hydrogen detection using Pd-coated GaN nanowires Applied Physics Letters. 93. DOI: 10.1063/1.2975173  0.67
2008 Polyakov AY, Smirnov NB, Govorkov AV, Markov AV, Yugova TG, Dabiran AM, Wowchak AM, Cui B, Osinsky AV, Chow PP, Pearton SJ, Scherbatchev KD, Bublik VT. Electrical and structural properties of AlN/GaN and AlGaN/GaN heterojunctions Journal of Applied Physics. 104: 053702. DOI: 10.1063/1.2973463  0.396
2008 Chu BH, Kang BS, Ren F, Chang CY, Wang YL, Pearton SJ, Glushakov AV, Dennis DM, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ. Enzyme-based lactic acid detection using AlGaN∕GaN high electron mobility transistors with ZnO nanorods grown on the gate region Applied Physics Letters. 93: 042114. DOI: 10.1063/1.2966158  0.306
2008 Kang BS, Wang HT, Ren F, Pearton SJ. Electrical detection of biomaterials using AlGaN/GaN high electron mobility transistors Journal of Applied Physics. 104: 031101. DOI: 10.1063/1.2959429  0.329
2008 Buyanova I, Wang X, Pozina G, Chen W, Lim W, Norton DP, Pearton SJ, Osinsky A, Dong JW, Hertog B. Effects of hydrogen on the optical properties of ZnCdO∕ZnO quantum wells grown by molecular beam epitaxy Applied Physics Letters. 92: 261912. DOI: 10.1063/1.2953178  0.643
2008 Tsao FC, Chen JY, Kuo CH, Chi GC, Pan CJ, Huang PJ, Tun CJ, Pong BJ, Hsueh TH, Chang CY, Pearton SJ, Ren F. Residual strain in ZnO nanowires grown by catalyst-free chemical vapor deposition on GaN/sapphire (0001) Applied Physics Letters. 92. DOI: 10.1063/1.2936090  0.355
2008 Hung SC, Wang YL, Hicks B, Pearton SJ, Dennis DM, Ren F, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ, Chi GC. Detection of chloride ions using an integrated Ag∕AgCl electrode with AlGaN∕GaN high electron mobility transistors Applied Physics Letters. 92: 193903. DOI: 10.1063/1.2927372  0.326
2008 Chen JY, Chi GC, Huang PJ, Chen MY, Hung SC, Nien CH, Chen MC, Lan SM, Pong BJ, Pan CJ, Tun CJ, Ren F, Chang CY, Pearton SJ. Microstructure of InN quantum dots grown on AlN buffer layers by metal organic vapor phase epitaxy Applied Physics Letters. 92: 162103. DOI: 10.1063/1.2916708  0.31
2008 Polyakov AY, Smirnov NB, Govorkov AV, Kozhukhova EA, Belogorokhov AI, Kim HS, Norton DP, Pearton SJ. Annealing effects on electrical properties of MgZnO films grown by pulsed laser deposition Journal of Applied Physics. 103: 083704. DOI: 10.1063/1.2906180  0.39
2008 Lim W, Norton DP, Jang JH, Craciun V, Pearton SJ, Ren F. Carrier concentration dependence of Ti∕Au specific contact resistance on n-type amorphous indium zinc oxide thin films Applied Physics Letters. 92: 122102. DOI: 10.1063/1.2902322  0.689
2008 Kim HS, Lugo F, Pearton SJ, Norton DP, Wang Y, Ren F. Phosphorus doped ZnO light emitting diodes fabricated via pulsed laser deposition Applied Physics Letters. 92: 112108. DOI: 10.1063/1.2900711  0.389
2008 Wang Y, Kim HS, Norton DP, Pearton SJ, Ren F. Dielectric passivation effects on ZnO light emitting diodes Applied Physics Letters. 92: 112101. DOI: 10.1063/1.2898709  0.397
2008 Yakimov EB, Vergeles PS, Polyakov AY, Smirnov NB, Govorkov AV, Lee I, Lee CR, Pearton SJ. Donor nonuniformity in undoped and Si doped n-GaN prepared by epitaxial lateral overgrowth Applied Physics Letters. 92: 042118. DOI: 10.1063/1.2840190  0.376
2008 Polyakov AY, Smirnov NB, Govorkov AV, Yugova TG, Markov AV, Dabiran AM, Wowchak AM, Cui B, Xie J, Osinsky AV, Chow PP, Pearton SJ. Electrical properties of GaN (Fe) buffers for AlGaN∕GaN high electron mobility transistor structures Applied Physics Letters. 92: 042110. DOI: 10.1063/1.2838734  0.308
2008 Lim W, Norton DP, Pearton SJ, Wang XJ, Chen WM, Buyanova IA, Osinsky A, Dong JW, Hertog B, Thompson AV, Schoenfeld WV, Wang YL, Ren F. Migration and luminescence enhancement effects of deuterium in ZnOZnCdO quantum wells Applied Physics Letters. 92. DOI: 10.1063/1.2836946  0.665
2008 Kim H, Lugo F, Pearton S, Norton D, Ren F. The effects of buffer growth parameters on heteroepitaxial ZnO films grown by pulsed laser deposition Vacuum. 82: 1259-1263. DOI: 10.1016/J.Vacuum.2008.02.005  0.371
2008 Lee I, Polyakov AY, Smirnov NB, Govorkov AV, Markov AV, Pearton SJ. Deep-level studies in GaN layers grown by epitaxial lateral overgrowth Thin Solid Films. 516: 2035-2040. DOI: 10.1016/J.Tsf.2007.07.144  0.381
2008 Stafford L, Lim W, Pearton S, Song J, Park J, Heo Y, Lee J, Kim J, Chicoine M, Schiettekatte F. Deep etch-induced damage during ion-assisted chemical etching of sputtered indium–zinc–oxide films in Ar/CH4/H2 plasmas Thin Solid Films. 516: 2869-2873. DOI: 10.1016/J.Tsf.2007.05.071  0.681
2008 Chen KH, Wang HW, Kang BS, Chang CY, Wang YL, Lele TP, Ren F, Pearton SJ, Dabiran A, Osinsky A, Chow PP. Low Hg(II) ion concentration electrical detection with AlGaN/GaN high electron mobility transistors Sensors and Actuators, B: Chemical. 134: 386-389. DOI: 10.1016/J.Snb.2008.05.012  0.337
2008 Arjunan AC, Singh D, Wang HT, Ren F, Kumar P, Singh RK, Pearton SJ. Improved free-standing GaN Schottky diode characteristics using chemical mechanical polishing Applied Surface Science. 255: 3085-3089. DOI: 10.1016/J.Apsusc.2008.08.096  0.399
2008 Hung SC, Huang PJ, Chan CE, Uen WY, Ren F, Pearton SJ, Yang TN, Chiang CC, Lan SM, Chi GC. Nanostructured surface morphology of ZnO grown on p-type GaN and Si by metal organic chemical vapor deposition Applied Surface Science. 255: 3016-3018. DOI: 10.1016/J.Apsusc.2008.08.086  0.421
2008 Anderson TJ, Wang HT, Kang BS, Ren F, Pearton SJ, Osinsky A, Dabiran A, Chow PP. Effect of bias voltage polarity on hydrogen sensing with AlGaN/GaN Schottky diodes Applied Surface Science. 255: 2524-2526. DOI: 10.1016/J.Apsusc.2008.07.173  0.323
2008 Erie J, Li Y, Ivill M, Kim H, Pearton S, Gila B, Norton D, Ren F. Properties of Zn3N2-doped ZnO films deposited by pulsed laser deposition Applied Surface Science. 254: 5941-5945. DOI: 10.1016/J.Apsusc.2008.03.161  0.373
2008 Lim W, Sadik P, Norton D, Gila B, Pearton S, Kravchenko I, Ren F. RF-sputtered CrB2 diffusion barrier for Ni/Au Ohmic contacts on p-CuCrO2 Applied Surface Science. 254: 5211-5215. DOI: 10.1016/J.Apsusc.2008.02.028  0.653
2008 Voss LF, Stafford L, Gila BP, Pearton SJ, Ren F. Ir-based diffusion barriers for Ohmic contacts to p-GaN Applied Surface Science. 254: 4134-4138. DOI: 10.1016/J.Apsusc.2007.12.046  0.704
2008 Lim W, Wang Y, Ren F, Norton D, Kravchenko I, Zavada J, Pearton S. Indium zinc oxide thin films deposited by sputtering at room temperature Applied Surface Science. 254: 2878-2881. DOI: 10.1016/J.Apsusc.2007.10.032  0.686
2008 Lim W, Craciun V, Siebein K, Gila B, Norton D, Pearton S, Ren F. Surface and bulk thermal annealing effects on ZnO crystals Applied Surface Science. 254: 2396-2400. DOI: 10.1016/J.Apsusc.2007.09.066  0.681
2008 Lim W, Sadik P, Norton D, Pearton S, Ren F. Dry etching of CuCrO2 thin films Applied Surface Science. 254: 2359-2363. DOI: 10.1016/J.Apsusc.2007.09.034  0.692
2008 Johnson JL, Choi Y, Ural A, Lim W, Wright J, Gila B, Ren F, Pearton S. Growth and Characterization of GaN Nanowires for Hydrogen Sensors Journal of Electronic Materials. 38: 490-494. DOI: 10.1007/S11664-008-0596-Z  0.689
2008 Pearton S, Lim W, Wright J, Tien L, Kim H, Norton D, Wang H, Kang B, Ren F, Jun J, Lin J, Osinsky A. ZnO and Related Materials for Sensors and Light-Emitting Diodes Journal of Electronic Materials. 37: 1426-1432. DOI: 10.1007/S11664-008-0416-5  0.654
2008 Tien LC, Pearton SJ, Norton DP, Ren F. Synthesis and microstructure of vertically aligned ZnO nanowires grown by high-pressure-assisted pulsed-laser deposition Journal of Materials Science. 43: 6925-6932. DOI: 10.1007/S10853-008-2988-0  0.36
2008 Kim H, Pearton S, Norton D, Ren F. Pulsed laser deposition of high-quality ZnO films using a high temperature deposited ZnO buffer layer Applied Physics A. 91: 255-259. DOI: 10.1007/S00339-008-4427-0  0.386
2008 Kim H, Erie J, Pearton S, Norton D, Ren F. Investigation of electrical and optical properties of ZnO thin films grown with O2/O3 gas mixture Applied Physics A. 91: 251-254. DOI: 10.1007/S00339-008-4426-1  0.328
2008 Tien L, Pearton S, Norton D, Ren F. Synthesis and characterization of single crystalline SnO2 nanorods by high-pressure pulsed laser deposition Applied Physics A. 91: 29-32. DOI: 10.1007/S00339-007-4378-X  0.329
2008 Voss LF, Stafford L, Hlad M, Gila BP, Abernathy CR, Pearton SJ, Ren F, Kravchenko I. High temperature Ohmic contacts to p-type GaN for use in light emitting applications Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 2241-2243. DOI: 10.1002/Pssc.200778644  0.696
2008 Erie JM, Ivill M, Kim HS, Pearton SJ, Gila B, Ren F, Norton DP. Acceptor state formation in arsenic-doped ZnO films grown using ozone Physica Status Solidi (a). 205: 1647-1652. DOI: 10.1002/Pssa.200723663  0.356
2007 Pearton SJ, Norton DP, Ivill MP, Hebard AF, Chen WM, Buyanova IA, Zavada JM. Transition metal doped ZnO for spintronics Materials Research Society Symposium Proceedings. 999: 43-54. DOI: 10.1557/Proc-0999-K03-04  0.363
2007 Polyakov AY, Smirnov NB, Govorkov AV, Kozhukhova EA, Belogorokhov AI, Markov AV, Kim HS, Norton DP, Pearton SJ. Electrical Properties of ZnO(P) and ZnMgO(P) Films Grown by Pulsed Laser Deposition Journal of the Electrochemical Society. 154: H825. DOI: 10.1149/1.2756976  0.368
2007 Lim W, Wang Y, Ren F, Norton DP, Kravchenko II, Zavada JM, Pearton SJ. Room-Temperature-Deposited Indium-Zinc Oxide Thin Films with Controlled Conductivity Electrochemical and Solid-State Letters. 10: H267. DOI: 10.1149/1.2750441  0.677
2007 Polyakov AY, Smirnov NB, Govorkov AV, Markov AV, Yugova TG, Petrova EA, Dabiran AM, Wowchak AM, Osinsky AV, Chow PP, Pearton SJ, Shcherbatchev KD, Bublik VT. Semi-Insulating, Fe-Doped Buffer Layers Grown by Molecular Beam Epitaxy Journal of the Electrochemical Society. 154: H749. DOI: 10.1149/1.2749094  0.355
2007 Khanna R, Gila BP, Stafford L, Pearton SJ, Ren F, Kravchenko II. Ir-Based Schottky and Ohmic Contacts on n-GaN Journal of the Electrochemical Society. 154: H584. DOI: 10.1149/1.2734102  0.406
2007 Lim WT, Sadik PW, Norton DP, Pearton SJ, Wang YL, Ren F. Reaction-Limited Wet Etching of CuCrO[sub 2] Electrochemical and Solid-State Letters. 10: H178. DOI: 10.1149/1.2719551  0.647
2007 Khanna R, Stafford L, Pearton SJ, Wang HT, Ren F, Westermann R, Johnson D, Constantine C. Reduction of dry etch damage to GaAs using pulse-time modulated plasmas Electrochemical and Solid-State Letters. 10: 139-141. DOI: 10.1149/1.2666657  0.373
2007 Wright JS, Khanna R, Stafford L, Gila BP, Norton DP, Pearton SJ, Ren F, Kravchenko II. Ir∕Au Ohmic Contacts on Bulk, Single-Crystal n-Type ZnO Journal of the Electrochemical Society. 154: H161. DOI: 10.1149/1.2424414  0.406
2007 Govorkov AV, Polyakov AY, Yugova TG, Smirnov NB, Petrova EA, Mezhennyi MV, Markov AV, Lee I-, Pearton SJ. Identification of dislocations and their influence on the recombination of charge carriers in gallium nitride Journal of Surface Investigation. X-Ray, Synchrotron and Neutron Techniques. 1: 380-385. DOI: 10.1134/S1027451007040039  0.327
2007 Polyakov AY, Smirnov NB, Belogorokhov AI, Govorkov AV, Kozhukhova EA, Osinsky AV, Xie JQ, Hertog B, Pearton SJ. Electrical properties and deep traps in ZnO films grown by molecular beam epitaxy Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 25: 1794. DOI: 10.1116/1.2790918  0.406
2007 Stafford L, Lim WT, Pearton SJ, Chicoine M, Gujrathi S, Schiettekatte F, Park J, Song J, Heo Y, Lee J, Kim J, Kravchenko II. Influence of the film properties on the plasma etching dynamics of rf-sputtered indium zinc oxide layers Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 25: 659-665. DOI: 10.1116/1.2736679  0.361
2007 Polyakov AY, Smirnov NB, Govorkov AV, Vdovin VI, Markov AV, Shlensky AA, Prebble E, Hanser D, Zavada JM, Pearton SJ. Properties of Fe-doped, thick, freestanding GaN crystals grown by hydride vapor phase epitaxy Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 25: 686. DOI: 10.1116/1.2718962  0.311
2007 Polyakov AY, Smirnov NB, Govorkov AV, Markov AV, Pearton SJ, Kolin NG, Merkurisov DI, Boiko VM, Lee C, Lee I. Fast neutron irradiation effects in n-GaN Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 25: 436. DOI: 10.1116/1.2713406  0.345
2007 Polyakov AY, Smirnov NB, Govorkov AV, Shcherbatchev KD, Bublik VT, Voronova MI, Dabiran AM, Osinsky AV, Pearton SJ. Electrical, photoelectrical, and luminescent properties of doped p-type GaN superlattices Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 25: 69. DOI: 10.1116/1.2406062  0.385
2007 Pearton SJ, Norton DP, Ivill MP, Hebard AF, Zavada JM, Chen WM, Buyanova IA. ZnO doped with transition metal ions Ieee Transactions On Electron Devices. 54: 1040-1048. DOI: 10.1109/Ted.2007.894371  0.318
2007 Kang BS, Wang HT, Ren F, Pearton SJ, Morey TE, Dennis DM, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ. Enzymatic glucose detection using ZnO nanorods on the gate region of AlGaN∕GaN high electron mobility transistors Applied Physics Letters. 91: 252103. DOI: 10.1063/1.2825574  0.314
2007 Kim HS, Pearton SJ, Norton DP, Ren F. Behavior of rapid thermal annealed ZnO:P films grown by pulsed laser deposition Journal of Applied Physics. 102: 104904. DOI: 10.1063/1.2815676  0.39
2007 Lopatiuk-Tirpak O, Chernyak L, Wang YL, Ren F, Pearton SJ, Gartsman K. Doping level dependence of electron irradiation-induced minority carrier diffusion length increase in Mg-doped GaN Applied Physics Letters. 91: 92107. DOI: 10.1063/1.2776866  0.348
2007 Zavada JM, Nepal N, Ugolini C, Lin JY, Jiang HX, Davies R, Hite J, Abernathy CR, Pearton SJ, Brown EE, Hömmerich U. Optical and magnetic behavior of erbium-doped GaN epilayers grown by metal-organic chemical vapor deposition Applied Physics Letters. 91. DOI: 10.1063/1.2767992  0.356
2007 Wang Y, Ren F, Lim W, Norton DP, Pearton SJ, Kravchenko II, Zavada JM. Room temperature deposited indium zinc oxide thin film transistors Applied Physics Letters. 90: 232103. DOI: 10.1063/1.2746084  0.698
2007 Voss LF, Stafford L, Khanna R, Gila BP, Abernathy CR, Pearton SJ, Ren F, Kravchenko II. Ohmic contacts to p -type GaN based on TaN, TiN, and ZrN Applied Physics Letters. 90. DOI: 10.1063/1.2742572  0.701
2007 Ivill M, Pearton SJ, Heo YW, Kelly J, Hebard AF, Norton DP. Magnetization dependence on carrier doping in epitaxial ZnO thin films co-doped with Mn and P Journal of Applied Physics. 101. DOI: 10.1063/1.2739302  0.363
2007 Sadik PW, Pearton SJ, Norton DP, Lambers E, Ren F. Functionalizing Zn- and O-terminated ZnO with thiols Journal of Applied Physics. 101: 104514. DOI: 10.1063/1.2736893  0.31
2007 Lopatiuk-Tirpak O, Chernyak L, Wang YL, Ren F, Pearton SJ, Gartsman K, Feldman Y. Cathodoluminescence studies of carrier concentration dependence for the electron-irradiation effects in p-GaN Applied Physics Letters. 90. DOI: 10.1063/1.2733620  0.352
2007 Yakimov EB, Vergeles PS, Polyakov AY, Smirnov NB, Govorkov AV, Lee I, Lee CR, Pearton SJ. Spatial variations of doping and lifetime in epitaxial laterally overgrown GaN Applied Physics Letters. 90: 152114. DOI: 10.1063/1.2722668  0.347
2007 Lim WT, Stafford L, Sadik PW, Norton DP, Pearton SJ, Wang YL, Ren F. Ni∕Au Ohmic contacts to p-type Mg-doped CuCrO2 epitaxial layers Applied Physics Letters. 90: 142101. DOI: 10.1063/1.2719150  0.651
2007 Stafford L, Margot J, Delprat S, Chaker M, Pearton SJ. Influence of redeposition on the plasma etching dynamics Journal of Applied Physics. 101: 83303. DOI: 10.1063/1.2719015  0.3
2007 Polyakov AY, Smirnov NB, Govorkov AV, Belogorokhov AI, Kozhukhova EA, Markov AV, Osinsky A, Dong JW, Pearton SJ. Persistent photoconductivity in p-type ZnO(N) grown by molecular beam epitaxy Applied Physics Letters. 90: 132103. DOI: 10.1063/1.2717089  0.373
2007 Wang YL, Ren F, Kim HS, Pearton SJ, Norton DP. Incorporation and drift of hydrogen at low temperatures in ZnO Applied Physics Letters. 90: 092116. DOI: 10.1063/1.2711201  0.373
2007 Yoon Y, Lin J, Pearton SJ, Guo J. Role of grain boundaries in ZnO nanowire field-effect transistors Journal of Applied Physics. 101: 024301. DOI: 10.1063/1.2422747  0.318
2007 Wang HT, Anderson TJ, Ren F, Li C, Low ZN, Lin J, Gila BP, Pearton SJ, Osinsky A, Dabiran A. Robust detection of hydrogen using differential AlGaN/GaN high electron mobility transistor sensing diodes Ecs Transactions. 6: 289-295. DOI: 10.1063/1.2408635  0.386
2007 Jun J, Chou B, Lin J, Phipps A, Shengwen X, Ngo K, Johnson D, Kasyap A, Nishida T, Wang HT, Kang BS, Ren F, Tien LC, Sadik PW, Norton DP, ... ... Pearton SJ, et al. A hydrogen leakage detection system using self-powered wireless hydrogen sensor nodes Solid-State Electronics. 51: 1018-1022. DOI: 10.1016/J.Sse.2007.05.019  0.582
2007 Lim W, Stafford L, Wright J, Vossa L, Khanna R, Song J, Park J, Heo YW, Lee J, Kim J, Norton D, Pearton S. Comparison of plasma chemistries for the dry etching of bulk single-crystal zinc-oxide and rf-sputtered indium–zinc-oxide films Applied Surface Science. 253: 9228-9233. DOI: 10.1016/J.Apsusc.2007.05.061  0.669
2007 Tien L, Norton D, Pearton S, Wang H, Ren F. Nucleation control for ZnO nanorods grown by catalyst-driven molecular beam epitaxy Applied Surface Science. 253: 4620-4625. DOI: 10.1016/J.Apsusc.2006.10.012  0.331
2007 Lim W, Stafford L, Song J, Park J, Heo Y, Lee J, Kim J, Pearton S. Dry etching of zinc-oxide and indium-zinc-oxide in IBr and BI3 plasma chemistries Applied Surface Science. 253: 3773-3778. DOI: 10.1016/J.Apsusc.2006.07.094  0.663
2007 Wright JS, Khanna R, Voss LF, Stafford L, Gila BP, Norton DP, Pearton SJ, Wang HT, Jang S, Anderson T, Chen JJ, Kang BS, Ren F, Shen H, LaRoche JR, et al. Effect of cryogenic temperature deposition on Au contacts to bulk, single-crystal n-type ZnO Applied Surface Science. 253: 3766-3772. DOI: 10.1016/J.Apsusc.2006.07.090  0.803
2007 Herrero AM, Gerger A, Gila B, Pearton S, Wang H, Jang S, Anderson T, Chen J, Kang B, Ren F, Shen H, LaRoche JR, Smith KV. Interfacial differences in enhanced schottky barrier height Au/n-GaAs diodes deposited at 77K Applied Surface Science. 253: 3298-3302. DOI: 10.1016/J.Apsusc.2006.07.032  0.394
2007 Chang C, Pearton SJ, Huang P, Chi G, Wang H, Chen J, Ren F, Chen K, Chen L. Control of nucleation site density of GaN nanowires Applied Surface Science. 253: 3196-3200. DOI: 10.1016/J.Apsusc.2006.07.007  0.364
2007 Lim W, Sadik P, Norton D, Gila B, Pearton S, Kravchenko I, Ren F. Ir Diffusion Barriers in Ni/Au Ohmic Contacts to p-Type CuCrO2 Journal of Electronic Materials. 37: 161-166. DOI: 10.1007/S11664-007-0334-Y  0.675
2007 Anderson T, Ren F, Kim J, Lin J, Hlad M, Gila B, Voss L, Pearton S, Bove P, Lahreche H, Thuret J. Microwave Performance of AlGaN/GaN High-Electron-Mobility Transistors on Si/SiO2/Poly-SiC Substrates Journal of Electronic Materials. 37: 384-387. DOI: 10.1007/S11664-007-0326-Y  0.691
2007 Voss LF, Stafford L, Khanna R, Gila BP, Abernathy CR, Pearton SJ, Ren F, Kravchenko II. Thermal stability of nitride-based diffusion barriers for ohmic contacts to n-GaN Journal of Electronic Materials. 36: 1662-1668. DOI: 10.1007/S11664-007-0277-3  0.697
2007 Polyakov AY, Smirnov NB, Govorkov AV, Markov AV, Yakimov EB, Vergeles PS, Kolin NG, Merkurisov DI, Boiko VM, Lee I, Lee C, Pearton SJ. Neutron radiation effects in epitaxially laterally overgrown GaN films Journal of Electronic Materials. 36: 1320-1325. DOI: 10.1007/S11664-007-0203-8  0.395
2007 Hite JK, Frazier RM, Davies RP, Thaler GT, Abernathy CR, Pearton SJ, Zavada JM, Brown E, Hömmerich U. Effect of Si Co Doping on Ferromagnetic Properties of GaGdN Journal of Electronic Materials. 36: 391-396. DOI: 10.1007/S11664-006-0040-1  0.391
2007 Wright J, Stafford L, Gila B, Norton D, Pearton S, Wang H, Ren F. Effect of Cryogenic Temperature Deposition of Various Metal Contacts on Bulk Single-Crystal n-Type ZnO Journal of Electronic Materials. 36: 488-493. DOI: 10.1007/S11664-006-0039-7  0.377
2007 Pearton SJ, Norton DP, Ivill MP, Hebard AF, Zavada JM, Chen WM, Buyanova IA. Ferromagnetism in transition-metal doped ZnO Journal of Electronic Materials. 36: 462-471. DOI: 10.1007/S11664-006-0034-Z  0.311
2007 Bang J, Kim K, Mok S, Ren F, Pearton SJ, Baik KH, Kim SH, Kim J, Shin K. Simple fabrication of nanoporous films on ZnO for enhanced light emission Physica Status Solidi (a) Applications and Materials Science. 204: 3417-3422. DOI: 10.1002/Pssa.200723127  0.594
2007 Chang T, Wu W, Lin J, Jang S, Ren F, Pearton S, Fitch R, Gillespie J. Analysis and design of AlGaN/GaN HEMT resistive mixers Microwave and Optical Technology Letters. 49: 1152-1154. DOI: 10.1002/Mop.22390  0.327
2006 Pearton SJ, Norton DP, Heo YW, Tien LC, Ivill MP, Li Y, Kang BS, Ren F, Kelly J, Hebard AF. ZnO spintronics and nanowire devices Journal of Electronic Materials. 35: 862-868. DOI: 10.1557/Proc-829-B8.5  0.451
2006 Pearton SJ, Tien LC, Kim HS, Norton DP, Chen JJ, Wang HT, Kang BS, Ren F, Lim WT, Wright J, Khanna R, Voss LF, Stafford L, Jun J, Lin J. Development of Thin Film and Nanorod ZnO-Based LEDs and Sensors Mrs Proceedings. 957. DOI: 10.1557/Proc-0957-K01-05  0.763
2006 Anderson T, Ren F, Voss L, Hlad M, Gila BP, Pearton S, Covert L, Lin J, Thuret J, Lahreche H, Bove P. AlGaN/GaN High Electron Mobility Transistors on Si/SiO2/poly-SiC Substrates Mrs Proceedings. 955. DOI: 10.1557/Proc-0955-I16-02  0.698
2006 Hite J, Thaler GT, Park JH, Steckl AJ, Abernathy CR, Zavada JM, Pearton S. Magnetic and Optical Properties of Eu-doped GaN Mrs Proceedings. 955. DOI: 10.1557/Proc-0955-I15-01  0.37
2006 Zavada JM, Nepal N, Lin J, Kim KH, Jiang HX, Hite J, Thaler GT, Frazier RM, Abernathy CR, Pearton SJ. Photoluminescence from Gd-implanted AlN and GaN epilayers Materials Research Society Symposium Proceedings. 955: 400-403. DOI: 10.1557/Proc-0955-I10-02  0.358
2006 Hite JK, Davies RP, Frazier RM, Thaler GT, Abernathy CR, Pearton SJ, Zavada JM. Properties of Ferromagnetic GaGdN Mrs Proceedings. 955. DOI: 10.1557/Proc-0955-I01-04  0.361
2006 Stodilka D, Gerger AP, Hlad M, Kumar P, Gila BP, Singh R, Abernathy CR, Pearton SJ, Ren F. Alternative Magnesium Calcium Oxide Gate Dielectric for Silicon Carbide MOS Application Mrs Proceedings. 911. DOI: 10.1557/Proc-0911-B14-03  0.397
2006 Anderson TJ, Ren F, Covert L, Lin J, Pearton SJ. Thermal Considerations in Design of Vertically Integrated Si∕GaN∕SiC Multichip Modules Journal of the Electrochemical Society. 153: G906. DOI: 10.1149/1.2234734  0.333
2006 Wang H, Kang BS, Ren F, Herrero A, Gerger AM, Gila BP, Pearton SJ, Shen H, LaRoche JR, Smith KV. Thermal Stability of Au Schottky Diodes on GaAs Deposited at Either 77 or 300 K Journal of the Electrochemical Society. 153: G787. DOI: 10.1149/1.2212049  0.434
2006 Voss L, Pearton SJ, Ren F, Bove P, Lahreche H, Thuret J. Electrical Performance of GaN Schottky Rectifiers on Si Substrates Journal of the Electrochemical Society. 153: G681. DOI: 10.1149/1.2202146  0.692
2006 Chen JJ, Anderson TJ, Jang S, Ren F, Li YJ, Kim H, Gila BP, Norton DP, Pearton SJ. Ti∕Au Ohmic Contacts to Al-Doped n-ZnO Grown by Pulsed Laser Deposition Journal of the Electrochemical Society. 153: G462. DOI: 10.1149/1.2184047  0.437
2006 Chang C, Lan T, Chi G, Chen L, Chen K, Chen J, Jang S, Ren F, Pearton SJ. Effect of Ozone Cleaning and Annealing on Ti ∕ Al ∕ Pt ∕ Au Ohmic Contacts on GaN Nanowires Electrochemical and Solid State Letters. 9. DOI: 10.1149/1.2179187  0.401
2006 Li Y, Kim H, Erie J, Ren F, Pearton SJ, Norton DP. Effect of argon annealing of phosphorus-doped ZnO and (Zn,Mg)O thin films grown pulsed laser deposition Proceedings of Spie. 6337: 633708. DOI: 10.1117/12.694798  0.365
2006 Park J, Song J, Heo Y, Lee J, Kim J, Lim WT, Stafford L, Norton DP, Pearton SJ. Effects of Zn content on structural and transparent conducting properties of indium-zinc oxide films grown by rf magnetron sputtering Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24: 2737. DOI: 10.1116/1.2393246  0.663
2006 Anderson TJ, Ren F, Voss L, Hlad M, Gila BP, Covert L, Lin J, Pearton SJ, Bove P, Lahreche H, Thuret J. AlGaN∕GaN high electron mobility transistors on Si∕SiO[sub 2]/poly-SiC substrates Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24: 2302. DOI: 10.1116/1.2348730  0.694
2006 Polyakov AY, Smirnov NB, Govorkov AV, Markov AV, Kolin NG, Merkurisov DI, Boiko VM, Shcherbatchev KD, Bublik VT, Voronova MI, Pearton SJ, Dabiran A, Osinsky AV. Neutron irradiation effects in p-GaN Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24: 2256. DOI: 10.1116/1.2338045  0.354
2006 Anderson T, Ren F, Pearton SJ, Mastro MA, Holm RT, Henry RL, Eddy CR, Lee JY, Lee KY, Kim J. Laser ablation of via holes in GaN and AlGaN/GaN high electron mobility transistor structures Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 2246-2249. DOI: 10.1116/1.2335435  0.303
2006 Wang H, Jang S, Anderson T, Chen JJ, Kang BS, Ren F, Herrero A, Gerger AM, Gila BP, Pearton SJ, Shen H, LaRoche JR, Smith KV. Improved Au Schottky contacts on GaAs using cryogenic metal deposition Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24: 1799. DOI: 10.1116/1.2213270  0.429
2006 Polyakov AY, Smirnov NB, Govorkov AV, Markov AV, Kolin NG, Boiko VM, Merkurisov DI, Pearton SJ. Neutron irradiation effects in undoped n-AlGaN Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24: 1094. DOI: 10.1116/1.2188407  0.338
2006 Govorkov AV, Smirnov NB, Polyakov AY, Markov AV, Voss L, Pearton SJ. Microcathodoluminescence and electrical properties of GaN epitaxial layers grown on thick freestanding GaN substrates Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24: 790. DOI: 10.1116/1.2184322  0.703
2006 Jang S, Chen JJ, Ren F, Yang H, Han S, Norton DP, Pearton SJ. Simulation of vertical and lateral ZnO light-emitting diodes Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24: 690. DOI: 10.1116/1.2180255  0.355
2006 Anderson TJ, Ren F, Covert L, Lin J, Pearton SJ. Thermal simulations of three-dimensional integrated multichip module with GaN power amplifier and Si modulator Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24: 284. DOI: 10.1116/1.2163888  0.332
2006 Polyakov AY, Smirnov NB, Govorkov AV, Markov AV, Kolin NG, Merkurisov DI, Boiko VM, Shcherbatchev KD, Bublik VT, Voronova MI, Lee I, Lee CR, Pearton SJ, Dabirian A, Osinsky AV. Fermi level pinning in heavily neutron-irradiated GaN Journal of Applied Physics. 100: 093715. DOI: 10.1063/1.2361157  0.371
2006 Hite J, Thaler GT, Khanna R, Abernathy CR, Pearton SJ, Park JH, Steckl AJ, Zavada JM. Optical and magnetic properties of Eu-doped GaN Applied Physics Letters. 89: 132119. DOI: 10.1063/1.2358293  0.362
2006 Stafford L, Voss LF, Pearton SJ, Chen JJ, Ren F. Schottky barrier height of boride-based rectifying contacts to p-GaN Applied Physics Letters. 89. DOI: 10.1063/1.2357855  0.687
2006 Zavada JM, Nepal N, Lin JY, Jiang HX, Brown E, Hömmerich U, Hite J, Thaler GT, Abernathy CR, Pearton SJ, Gwilliam R. Ultraviolet photoluminescence from Gd-implanted AlN epilayers Applied Physics Letters. 89. DOI: 10.1063/1.2357552  0.329
2006 Wang HT, Jang S, Anderson T, Chen JJ, Kang BS, Ren F, Voss LF, Stafford L, Khanna R, Gila BP, Pearton SJ, Shen H, LaRoche JR, Smith KV. Increased Schottky barrier heights for Au on n- And p-type GaN using cryogenic metal deposition Applied Physics Letters. 89. DOI: 10.1063/1.2356698  0.716
2006 Polyakov AY, Smirnov NB, Govorkov AV, Dabiran AM, Osinsky AV, Pearton SJ. Electrical and optical properties of doped p-type GaN superlattices Applied Physics Letters. 89: 112127. DOI: 10.1063/1.2354443  0.388
2006 Hite JK, Frazier RM, Davies R, Thaler GT, Abernathy CR, Pearton SJ, Zavada JM. Effect of growth conditions on the magnetic characteristics of GaGdN Applied Physics Letters. 89: 092119. DOI: 10.1063/1.2337082  0.353
2006 Lopatiuk-Tirpak O, Schoenfeld WV, Chernyak L, Xiu FX, Liu JL, Jang S, Ren F, Pearton SJ, Osinsky A, Chow P. Carrier concentration dependence of acceptor activation energy in p-type ZnO Applied Physics Letters. 88. DOI: 10.1063/1.2206700  0.324
2006 Irokawa Y, Ishiguro O, Kachi T, Pearton SJ, Ren F. Implantation temperature dependence of Si activation in AlGaN Applied Physics Letters. 88: 182106. DOI: 10.1063/1.2200283  0.391
2006 Kang BS, Chen JJ, Ren F, Li Y, Kim H, Norton DP, Pearton SJ. ITO∕Ti∕Au Ohmic contacts on n-type ZnO Applied Physics Letters. 88: 182101. DOI: 10.1063/1.2198513  0.396
2006 Chang CY, Tsao FC, Pan CJ, Chi GC, Wang HT, Chen JJ, Ren F, Norton DP, Pearton SJ, Chen KH, Chen LC. Electroluminescence from ZnO nanowire/polymer composite p-n junction Applied Physics Letters. 88. DOI: 10.1063/1.2198480  0.359
2006 Chen J, Jang S, Anderson TJ, Ren F, Li Y, Kim H, Gila BP, Norton DP, Pearton SJ. Low specific contact resistance Ti∕Au contacts on ZnO Applied Physics Letters. 88: 122107. DOI: 10.1063/1.2187576  0.426
2006 Wang H, Kang BS, Chen J, Anderson T, Jang S, Ren F, Kim HS, Li YJ, Norton DP, Pearton SJ. Band-edge electroluminescence from N+-implanted bulk ZnO Applied Physics Letters. 88: 102107. DOI: 10.1063/1.2186508  0.389
2006 Han SY, Hite J, Thaler GT, Frazier RM, Abernathy CR, Pearton SJ, Choi HK, Lee WO, Park YD, Zavada JM, Gwilliam R. Effect of Gd implantation on the structural and magnetic properties of GaN and AlN Applied Physics Letters. 88: 042102. DOI: 10.1063/1.2167790  0.361
2006 Chen J, Jang S, Ren F, Rawal S, Li Y, Kim H, Norton DP, Pearton SJ, Osinsky A. Comparison of Ti∕Al∕Pt∕Au and Ti∕Au Ohmic contacts on n-type ZnCdO Applied Physics Letters. 88: 012109. DOI: 10.1063/1.2161927  0.404
2006 Voss L, Khanna R, Pearton SJ, Ren F, Kravchenko I. Improved thermally stable ohmic contacts on p-GaN based on W2B Applied Physics Letters. 88: 12104. DOI: 10.1063/1.2161806  0.71
2006 Norton DP, Ivill M, Li Y, Kwon YW, Erie JM, Kim HS, Ip K, Pearton SJ, Heo YW, Kim S, Kang BS, Ren F, Hebard AF, Kelly J. Charge carrier and spin doping in ZnO thin films Thin Solid Films. 496: 160-168. DOI: 10.1016/J.Tsf.2005.08.246  0.697
2006 Kim J, Freitas JA, Mittereder J, Fitch R, Kang BS, Pearton SJ, Ren F. Effective temperature measurements of AlGaN/GaN-based HEMT under various load lines using micro-raman technique Solid-State Electronics. 50: 408-411. DOI: 10.1016/J.Sse.2005.11.009  0.32
2006 Polyakov AY, Smirnov NB, Govorkov AV, Markov AV, Pearton SJ, Kolin NG, Merkurisov DI, Boiko VM, Skowronski M, Lee I-. Neutron irradiation effects in AlGaN/GaN heterojunctions Physica B-Condensed Matter. 376: 523-526. DOI: 10.1016/J.Physb.2005.12.133  0.372
2006 Ip K, Thaler G, Yang H, Youn Han S, Li Y, Norton D, Pearton S, Jang S, Ren F. Contacts to ZnO Journal of Crystal Growth. 287: 149-156. DOI: 10.1016/J.Jcrysgro.2005.10.059  0.726
2006 Lim W, Stafford L, Song J, Park J, Heo Y, Lee J, Kim J, Pearton S. High-density plasma etching of indium–zinc oxide films in Ar/Cl2 and Ar/CH4/H2 chemistries Applied Surface Science. 253: 2752-2757. DOI: 10.1016/J.Apsusc.2006.05.052  0.671
2006 Khanna R, Pearton SJ, Ren F, Kravchenko II. Stability of Ti/Al/ZrB 2 /Ti/Au ohmic contacts on n-GaN Applied Surface Science. 253: 2340-2344. DOI: 10.1016/J.Apsusc.2006.04.042  0.408
2006 Khanna R, Ramani K, Cracium V, Singh R, Pearton SJ, Ren F, Kravchenko II. ZrB 2 Schottky diode contacts on n-GaN Applied Surface Science. 253: 2315-2319. DOI: 10.1016/J.Apsusc.2006.04.041  0.439
2006 Lim W, Voss L, Khanna R, Gila B, Norton D, Pearton S, Ren F. Comparison of CH4/H2 and C2H6/H2 inductively coupled plasma etching of ZnO Applied Surface Science. 253: 1269-1273. DOI: 10.1016/J.Apsusc.2006.01.081  0.74
2006 Lim W, Voss L, Khanna R, Gila B, Norton D, Pearton S, Ren F. Dry etching of bulk single-crystal ZnO in CH 4 /H 2 -based plasma chemistries Applied Surface Science. 253: 889-894. DOI: 10.1016/J.Apsusc.2006.01.037  0.771
2006 Chen J, Jang S, Ren F, Rawal S, Li Y, Kim H, Norton D, Pearton S, Osinsky A. Thermal stability of Ti/Al/Pt/Au and Ti/Au Ohmic contacts on n-type ZnCdO Applied Surface Science. 253: 746-752. DOI: 10.1016/J.Apsusc.2006.01.012  0.381
2006 Hlad M, Voss L, Gila B, Abernathy C, Pearton S, Ren F. Dry etching of MgCaO gate dielectric and passivation layers on GaN Applied Surface Science. 252: 8010-8014. DOI: 10.1016/J.Apsusc.2005.10.018  0.696
2006 Heo Y, Ip K, Pearton S, Norton D, Budai J. Growth of ZnO thin films on c-plane Al2O3 by molecular beam epitaxy using ozone as an oxygen source Applied Surface Science. 252: 7442-7448. DOI: 10.1016/J.Apsusc.2005.08.094  0.681
2006 Chang C, Chi G, Wang W, Chen L, Chen K, Ren F, Pearton SJ. Electrical transport properties of single GaN and InN nanowires Journal of Electronic Materials. 35: 738-743. DOI: 10.1007/S11664-006-0131-Z  0.431
2006 Jang S, Ren F, Pearton SJ, Gila BP, Hlad M, Abernathy CR, Yang H, Pan CJ, Chyi J, Bove P, Lahreche H, Thuret J. Si-diffused GaN for enhancement-mode GaN mosfet on si applications Journal of Electronic Materials. 35: 685-690. DOI: 10.1007/S11664-006-0121-1  0.376
2006 Hlad M, Voss L, Gila BP, Abernathy CR, Pearton SJ, Ren F. Selective dry etching of (Sc2O3)x(Ga2O3)1−x gate dielectrics and surface passivation films on GaN Journal of Electronic Materials. 35: 680-684. DOI: 10.1007/S11664-006-0120-2  0.703
2006 Polyakov AY, Smirnov NB, Govorkov AV, Kozhukhova EA, Pearton SJ, Norton DP, Osinsky A, Dabiran A. Electrical properties of undoped bulk ZnO substrates Journal of Electronic Materials. 35: 663-669. DOI: 10.1007/S11664-006-0117-X  0.393
2006 Li YJ, Heo YW, Erie JM, Kim H, Ip K, Pearton SJ, Norton DP. Synthesis and characterization of phosphorus-doped ZnO and (Zn,Mg)O thin films via pulsed laser deposition Journal of Electronic Materials. 35: 530-537. DOI: 10.1007/S11664-006-0095-Z  0.709
2006 Chen J, Jang S, Ren F, Li Y, Kim H, Norton DP, Pearton SJ, Osinsky A, Chu SNG, Weaver JF. Selective and nonselective wet etching of Zn0.9Mg0.1O/ZnO Journal of Electronic Materials. 35: 516-519. DOI: 10.1007/S11664-006-0092-2  0.332
2006 Chen J, Hlad M, Gerger A, Gila B, Ren F, Abernathy C, Pearton S. Band Offsets in the Mg0.5Ca0.5O/GaN Heterostructure System Journal of Electronic Materials. 36: 368-372. DOI: 10.1007/S11664-006-0037-9  0.346
2006 Lee I, Polyakov AY, Smirnov NB, Govorkov AV, Markov AV, Pearton SJ. Electrical and recombination properties and deep traps spectra in MOCVD ELOG GaN layers Physica Status Solidi (C). 3: 2087-2090. DOI: 10.1002/Pssc.200565195  0.368
2006 Choi H, Lee CW, Lee GS, Oh MK, Ahn DJ, Kim J, Kim J, Ren F, Pearton SJ. Immobilization of heterogeneous polydiacetylene supramolecules on SiC substrate for cyclodextrin sensors Physica Status Solidi (a). 203: R79-R81. DOI: 10.1002/Pssa.200622290  0.31
2006 Kim J, Baik K, Park C, Cho S, Pearton SJ, Ren F. Measurement of external stress on bulk GaN Physica Status Solidi (a). 203: 2393-2396. DOI: 10.1002/Pssa.200622165  0.574
2005 Sippel-Oakley J, Wang HT, Kang BS, Wu Z, Ren F, Rinzler AG, Pearton SJ. Carbon nanotube films for room temperature hydrogen sensing. Nanotechnology. 16: 2218-21. PMID 20817998 DOI: 10.1088/0957-4484/16/10/040  0.322
2005 Khanna R, Pearton SJ, Kao CJ, Kravchenko II, Ren F, Chi GC, Dabiran A, Osinsky A. W2B based High Thermal Stability Ohmic Contacts to n-GaN Mrs Proceedings. 892. DOI: 10.1557/Proc-0892-Ff14-04  0.414
2005 Xie JQ, Dong JW, Osinsky A, Chow PP, Heo YW, Norton DP, Pearton SJ, Dong XY, Adelmann C, Palmstrøm CJ. Growth of a-plane ZnO Thin Films on r-plane Sapphire by Plasma-assisted MBE Mrs Proceedings. 891. DOI: 10.1557/Proc-0891-Ee10-01  0.326
2005 Kim J, Freitas JA, Klein PB, Jang S, Ren F, Pearton SJ. The Effect of Thermally Induced Stress on Device Temperature Measurements by Raman Spectroscopy Electrochemical and Solid State Letters. 8. DOI: 10.1149/1.2103527  0.303
2005 Tien LC, Wang HT, Kang BS, Ren F, Sadik PW, Norton DP, Pearton SJ, Lin J. Room-Temperature Hydrogen-Selective Sensing Using Single Pt-Coated ZnO Nanowires at Microwatt Power Levels Electrochemical and Solid-State Letters. 8: G230. DOI: 10.1149/1.1979450  0.318
2005 Irokawa Y, Fujishima O, Kachi T, Pearton SJ, Ren F. Si + Ion Implantation into GaN at Cryogenic Temperatures Electrochemical and Solid State Letters. 8. DOI: 10.1149/1.1869093  0.334
2005 Thaler G, Frazier R, Gila B, Stapleton J, Davies R, Abernathy CR, Pearton SJ. Effect of oxygen co-doping on the electronic and magnetic properties of Ga(1-x)MnxN Electrochemical and Solid-State Letters. 8: G20-G22. DOI: 10.1149/1.1830394  0.375
2005 Yang HS, Han SY, Heo YW, Baik KH, Norton DP, Pearton SJ, Ren F, Osinsky A, Dong JW, Hertog B, Dabiran AM, Chow PP, Chernyak L, Steiner T, Kao CJ, et al. Fabrication of hybrid n-ZnMgO/n-ZnO/p-AlGaN/p-GaN light-emitting diodes Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 44: 7296-7300. DOI: 10.1143/Jjap.44.7296  0.625
2005 Han SY, Yang HS, Baik KH, Pearton SJ, Ren F. Role of Ion Energy and Flux on Inductively Coupled Plasma Etch Damage in InGaN/GaN Multi Quantum Well Light Emitting Diodes Japanese Journal of Applied Physics. 44: 7234-7237. DOI: 10.1143/Jjap.44.7234  0.612
2005 Yang HS, Li Y, Norton DP, Pearton SJ, Jang S, Ren F, Boatner LA. Fabrication of p-n junctions in as-grown ZnMgO/ZnO films Proceedings of Spie. 5941. DOI: 10.1117/12.616668  0.415
2005 Li YJ, Heo YW, Erie JM, Kim HS, Ip K, Pearton SJ, Norton DP. Properties of phosphorus-doped ZnO and (Zn,Mg)O thin films via pulsed laser deposition Proceedings of Spie. 5941: 366. DOI: 10.1117/12.615015  0.712
2005 Han SY, Yang H, Norton DP, Pearton SJ, Ren F, Osinsky A, Dong JW, Hertog B, Chow PP. Design and simulation of ZnO-based light-emitting diode structures Journal of Vacuum Science & Technology B. 23: 2504-2509. DOI: 10.1116/1.2131869  0.345
2005 Voss L, Gila BP, Pearton SJ, Wang H, Ren F. Characterization of bulk GaN rectifiers for hydrogen gas sensing Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 23: 2373. DOI: 10.1116/1.2110343  0.683
2005 Kryliouk O, Park HJ, Wang HT, Kang BS, Anderson TJ, Ren F, Pearton SJ. Pt-coated InN nanorods for selective detection of hydrogen at room temperature Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 23: 1891. DOI: 10.1116/1.2008268  0.354
2005 Kao CJ, Kwon YW, Heo YW, Norton DP, Pearton SJ, Ren F, Chi GC. Comparison of ZnO metal-oxide-semiconductor field effect transistor and metal-semiconductor field effect transistor structures grown on sapphire by pulsed laser deposition Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 1024-1028. DOI: 10.1116/1.1924613  0.4
2005 Polyakov AY, Smirnov NB, Govorkov AV, Kozhukhova EA, Heo YW, Ivill MP, Ip K, Norton DP, Pearton SJ, Kelly J, Rairigh R, Hebard AF, Steiner T. Properties of Mn- and Co-doped bulk ZnO crystals Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 274-279. DOI: 10.1116/1.1856476  0.335
2005 Kang BS, Ren F, Jeong BS, Kwon YW, Baik KH, Norton DP, Pearton SJ. Use of 370 nm UV light for selective-area fibroblast cell growth Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 23: 57. DOI: 10.1116/1.1835314  0.565
2005 Polyakov AY, Smirnov NB, Govorkov AV, Thaler GT, Frazier RM, Abernathy CR, Pearton SJ. Electrical and optical properties of GaCrN films grown by molecular beam epitaxy Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 23: 1. DOI: 10.1116/1.1829059  0.341
2005 Kang BS, Kim S, Ren F, Gila BP, Abernathy CR, Pearton SJ. AlGaN/GaN-based diodes and gateless HEMTs for gas and chemical sensing Ieee Sensors Journal. 5: 677-680. DOI: 10.1109/Jsen.2005.848136  0.37
2005 Shi GA, Stavola M, Pearton SJ, Thieme M, Lavrov EV, Weber J. Hydrogen local modes and shallow donors in ZnO Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.195211  0.318
2005 Kim DH, Yang JS, Kim YS, Noh TW, Bu SD, Baik S, Kim Y, Park YD, Pearton SJ, Kim J, Park J, Lin H, Chen CT, Song YJ. Effects of high-temperature postannealing on magnetic properties of Co-doped anataseTiO2thin films Physical Review B. 71. DOI: 10.1103/Physrevb.71.014440  0.35
2005 Polyakov A, Smirnov N, Govorkov A, Khanna R, Pearton S. Electrical and optical properties of p-GaN films implanted with transition metal impurities Physica Status Solidi (C). 2: 2520-2524. DOI: 10.1088/0953-8984/16/17/023  0.372
2005 Tien LC, Sadik PW, Norton DP, Voss LF, Pearton SJ, Wang HT, Kang BS, Ren F, Jun J, Lin J. Hydrogen sensing at room temperature with Pt-coated ZnO thin films and nanorods Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2136070  0.666
2005 Yang HS, Norton DP, Pearton SJ, Ren F. Ti∕Au n-type Ohmic contacts to bulk ZnO substrates Applied Physics Letters. 87: 212106. DOI: 10.1063/1.2135381  0.428
2005 Khanna R, Han SY, Pearton SJ, Schoenfeld D, Schoenfeld WV, Ren F. High dose Co-60 gamma irradiation of InGaN quantum well light-emitting diodes Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2132085  0.321
2005 Wang HT, Kang BS, Ren F, Fitch RC, Gillespie JK, Moser N, Jessen G, Jenkins T, Dettmer R, Via D, Crespo A, Gila BP, Abernathy CR, Pearton SJ. Comparison of gate and drain current detection of hydrogen at room temperature with AlGaN/GaN high electron mobility transistors Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2117617  0.37
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