Year |
Citation |
Score |
2009 |
Horvath P, Gallagher A. Surface radicals in silane/hydrogen discharges Journal of Applied Physics. 105: 13304. DOI: 10.1063/1.3050331 |
0.301 |
|
2008 |
Zheng W, Gallagher A. Radical species involved in hotwire (catalytic) deposition of hydrogenated amorphous silicon Thin Solid Films. 516: 929-939. DOI: 10.1016/J.Tsf.2007.05.002 |
0.722 |
|
2006 |
Zheng W, Gallagher A. Hot wire radicals and reactions Thin Solid Films. 501: 21-25. DOI: 10.1016/J.Tsf.2005.07.116 |
0.718 |
|
2006 |
Zheng W, Gallagher A. Hydrogen dissociation on high-temperature tungsten Surface Science. 600: 2207-2213. DOI: 10.1016/J.Susc.2006.03.032 |
0.708 |
|
2003 |
Xu X, Loftus TH, Dunn JW, Greene CH, Hall JL, Gallagher A, Ye J. Single-stage sub-Doppler cooling of alkaline earth atoms. Physical Review Letters. 90: 193002. PMID 12785942 DOI: 10.1103/Physrevlett.90.193002 |
0.302 |
|
2003 |
Xu X, Loftus TH, Hall JL, Gallagher A, Ye J. Cooling and trapping of atomic strontium Journal of the Optical Society of America B: Optical Physics. 20: 968-976. DOI: 10.1364/Josab.20.000968 |
0.313 |
|
2003 |
Hamann H, Larbadi M, Barzen S, Brown T, Gallagher A, Nesbitt D. Extinction near-field optical microscopy Optics Communications. 227: 1-13. DOI: 10.1016/J.Optcom.2003.08.039 |
0.301 |
|
2002 |
Xu X, Loftus TH, Smith MJ, Hall JL, Gallagher A, Ye J. Dynamics in a two-level atom magneto-optical trap Physical Review a - Atomic, Molecular, and Optical Physics. 66: 114011-114014. DOI: 10.1103/Physreva.66.011401 |
0.338 |
|
2001 |
Mahan AH, Xu Y, Nelson BP, Crandall RS, Cohen JD, Palinginis KC, Gallagher AC. Saturated defect densities of hydrogenated amorphous silicon grown by hot-wire chemical vapor deposition at rates up to 150 Å/s Applied Physics Letters. 78: 3788-3790. DOI: 10.1063/1.1375008 |
0.315 |
|
2001 |
Gallagher A. Some physics and chemistry of hot-wire deposition Thin Solid Films. 395: 25-28. DOI: 10.1016/S0040-6090(01)01201-9 |
0.319 |
|
2000 |
Gallagher A. Model of particle growth in silane discharges Physical Review E. 62: 2690-2706. PMID 11088750 DOI: 10.1103/Physreve.62.2690 |
0.333 |
|
1999 |
Yan B, Yang J, Guha S, Gallagher A. Analysis of Plasma Properties and Deposition of Amorphous Silicon Alloy Solar Cells Using Very High Frequency Glow Discharge Mrs Proceedings. 557: 115. DOI: 10.1557/Proc-557-115 |
0.31 |
|
1999 |
Paul BD, Dowell ML, Gallagher A, Cooper JW. Observation of conical emission from a single self-trapped beam Physical Review A. 59: 4784-4796. DOI: 10.1103/Physreva.59.4784 |
0.695 |
|
1999 |
Ukegawa S, Gallagher A. A discharge lamp based on MgH radiation Journal of Applied Physics. 86: 5365-5371. DOI: 10.1063/1.371533 |
0.309 |
|
1997 |
Molenbroek EC, Mahan AH, Gallagher A. Mechanisms Influencing Hot-Wire Deposition Of Hydrogenated Amorphous Silicon Journal of Applied Physics. 82: 1909-1917. DOI: 10.1063/1.365998 |
0.301 |
|
1996 |
Laracuente A, Bronikowski MJ, Gallagher A. Chemical vapor deposition of nanometer-size aluminum features on silicon surfaces using an STM tip Applied Surface Science. 107: 11-17. DOI: 10.1016/S0169-4332(96)00514-4 |
0.311 |
|
1995 |
Dowell ML, Paul BD, Gallagher A, Cooper J. Self-focused light propagation in a fully saturable medium: Theory. Physical Review. A. 52: 3244-3253. PMID 9912612 DOI: 10.1103/Physreva.52.3244 |
0.689 |
|
1994 |
Hart RC, You L, Gallagher A, Cooper J. Failures of the four-wave mixing model for cone emission Optics Communications. 111: 331-337. DOI: 10.1016/0030-4018(94)90474-X |
0.3 |
|
1993 |
Stutzin GC, Ostrom RM, Gallagher A, Tanenbaum DM. Nanoscale study of the as-grown hydrogenated amorphous silicon surface Journal of Applied Physics. 74: 91-100. DOI: 10.1063/1.355203 |
0.313 |
|
1992 |
Doyle JR, Doughty DA, Gallagher A. Plasma chemistry in disilane discharges Journal of Applied Physics. 71: 4771-4780. DOI: 10.1063/1.350669 |
0.328 |
|
1992 |
Doyle JR, Doughty DA, Gallagher A. Plasma chemistry in silane/germane and disilane/germane mixtures Journal of Applied Physics. 71: 4727-4738. DOI: 10.1063/1.350663 |
0.325 |
|
1991 |
Doyle JR, Doughty DA, Gallagher A. Germane discharge chemistry Journal of Applied Physics. 69: 4169-4177. DOI: 10.1063/1.348384 |
0.352 |
|
1988 |
Lin GH, Doyle JR, He M, Gallagher A. Argon sputtering analysis of the growing surface of hydrogenated amorphous silicon films Journal of Applied Physics. 64: 188-194. DOI: 10.1063/1.341461 |
0.31 |
|
1988 |
Gallagher A. Neutral radical deposition from silane discharges Journal of Applied Physics. 63: 2406-2413. DOI: 10.1063/1.341034 |
0.317 |
|
1986 |
Robertson R, Gallagher A. Reaction mechanism and kinetics of silane pyrolysis on a hydrogenated amorphous silicon surface Journal of Chemical Physics. 85: 3623-3630. DOI: 10.1063/1.450933 |
0.312 |
|
1986 |
Robertson R, Gallagher A. Mono‐ and disilicon radicals in silane and silane‐argon dc discharges Journal of Applied Physics. 59: 3402-3411. DOI: 10.1063/1.336806 |
0.305 |
|
1977 |
Gallagher A, Holstein T. Collision-induced absorption in atomic electronic transitions Physical Review A. 16: 2413-2431. DOI: 10.1103/Physreva.16.2413 |
0.326 |
|
1976 |
Chen ST, Leep D, Gallagher A. Excitation of the Sr and Sr+ resonance lines by electron impact on Sr atoms Physical Review A. 13: 947-952. DOI: 10.1103/Physreva.13.947 |
0.349 |
|
1976 |
Scheps R, Gallagher A. Teratomic recombination in alkali metal–noble gas vapors Journal of Chemical Physics. 65: 859-871. DOI: 10.1063/1.433154 |
0.322 |
|
1975 |
Gallagher A. Noble-gas broadening of the Li resonance line Physical Review A. 12: 133-138. DOI: 10.1103/Physreva.12.133 |
0.308 |
|
1975 |
Ottinger C, Scheps R, York GW, Gallagher A. Broadening of the Rb resonance lines by the noble gases Physical Review A. 11: 1815-1828. DOI: 10.1103/Physreva.11.1815 |
0.331 |
|
1974 |
Leep D, Gallagher A. Electron excitation of the lithium 6708- resonance line Physical Review A. 10: 1082-1090. DOI: 10.1103/Physreva.10.1082 |
0.319 |
|
1974 |
Carrington CG, Gallagher A. Teratomic recombination of excited RbXe Journal of Chemical Physics. 60: 3436-3444. DOI: 10.1063/1.1681556 |
0.316 |
|
1974 |
Drummond DL, Gallagher A. Potentials and continuum spectra of Rb‐noble gas molecules Journal of Chemical Physics. 60: 3426-3435. DOI: 10.1063/1.1681555 |
0.313 |
|
1971 |
Norton M, Gallagher A. Measurements of Lowest-S-State Lifetimes of Gallium, Indium, and Thalium Physical Review A. 3: 915-927. DOI: 10.1103/Physreva.3.915 |
0.31 |
|
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