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Sandip Tiwari - Publications

Affiliations: 
1999- Electrical and Computer Engineering Cornell University, Ithaca, NY, United States 
Area:
semiconductor electronics and optics
Website:
https://www.engineering.cornell.edu/faculty-directory/sandip-tiwari
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90 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Joe DJ, Hwang J, Johnson C, Cha HY, Lee JW, Shen X, Spencer MG, Tiwari S, Kim M. Surface Functionalized Graphene Biosensor on Sapphire for Cancer Cell Detection. Journal of Nanoscience and Nanotechnology. 16: 144-51. PMID 27398439 DOI: 10.1166/Jnn.2016.12042  0.629
2016 Joe DJ, Hwang J, Johnson C, Cha HY, Lee JW, Shen X, Spencer MG, Tiwari S, Kim M. Surface functionalized graphene biosensor on sapphire for cancer cell detection Journal of Nanoscience and Nanotechnology. 16: 144-151. DOI: 10.1166/jnn.2016.12042  0.407
2015 Wang H, Zhang C, Chan W, Tiwari S, Rana F. Ultrafast response of monolayer molybdenum disulfide photodetectors. Nature Communications. 6: 8831. PMID 26572726 DOI: 10.1038/Ncomms9831  0.337
2014 Kim J, Tiwari S. Inexact computing using probabilistic circuits Acm Journal On Emerging Technologies in Computing Systems. 10: 1-23. DOI: 10.1145/2564925  0.319
2014 Bryce BA, Ilic BR, Reuter MC, Tiwari S. Wafer scale tilt-compensated silicon nanowire atomic force microscopy probes for high aspect ratio geometries Journal of Micromechanics and Microengineering. 24. DOI: 10.1088/0960-1317/24/9/095016  0.306
2013 Hyeon Lee S, Kim M, Ha SD, Lee JW, Ramanathan S, Tiwari S. Space charge polarization induced memory in SmNiO3/Si transistors Applied Physics Letters. 102. DOI: 10.1063/1.4790394  0.361
2013 Kim J, Lee S, Rubin J, Kim M, Tiwari S. Scale changes in electronics: Implications for nanostructure devices for logic and memory and beyond Solid-State Electronics. 84: 2-12. DOI: 10.1016/J.Sse.2013.02.031  0.393
2012 Kim M, Hwang J, Lepak LA, Lee JW, Spencer MG, Tiwari S. Improvement of carrier mobility of top-gated SiC epitaxial graphene transistors using a PVA dielectric buffer layer. Nanotechnology. 23: 335202. PMID 22842470 DOI: 10.1088/0957-4484/23/33/335202  0.64
2012 Kim M, Sundararaman R, Tiwari S, Lee JW. Charge trapping devices using a bilayer oxide structure. Journal of Nanoscience and Nanotechnology. 12: 423-7. PMID 22523996 DOI: 10.1166/Jnn.2012.5400  0.384
2012 Kim M, Hwang J, Shields VB, Tiwari S, Spencer MG, Lee JW. SiC surface orientation and Si loss rate effects on epitaxial graphene. Nanoscale Research Letters. 7: 186. PMID 22410299 DOI: 10.1186/1556-276X-7-186  0.644
2012 Kim J, Solomon PM, Tiwari S. Adaptive circuit design using independently biased back-gated Double-Gate MOSFETS Ieee Transactions On Circuits and Systems I: Regular Papers. 59: 806-819. DOI: 10.1109/Tcsi.2011.2169743  0.408
2012 Lee SH, Kim M, Cheong B, Lee J, Tiwari S. $\hbox{Ge}_{2}\hbox{Sb}_{2}\hbox{Te}_{5}$ as a Ferroelectric: A Single-Element Low-Voltage Dynamic Memory Ieee Electron Device Letters. 33: 1231-1233. DOI: 10.1109/Led.2012.2204721  0.325
2012 Bryce BA, Robert Ilic B, Reuter MC, Tiwari S. Silicon nanowire atomic force microscopy probes for high aspect ratio geometries Applied Physics Letters. 100. DOI: 10.1063/1.4720406  0.31
2011 Bryce BA, Reuter MC, Wacaser BA, Tiwari S. Contactless measurement of surface dominated recombination in gold- and aluminum-catalyzed silicon vapor-liquid-solid wires. Nano Letters. 11: 4282-7. PMID 21939179 DOI: 10.1021/Nl202279Z  0.341
2011 Rubin J, Sundararaman R, Kim M, Tiwari S. A low-voltage torsion nanorelay Ieee Electron Device Letters. 32: 414-416. DOI: 10.1109/Led.2010.2099199  0.409
2010 Bryce BA, Levendorf MP, Park J, Tiwari S. Structure and interfacial properties of Germanium nanowires grown on titanium Electrochemical and Solid-State Letters. 13: K77-K79. DOI: 10.1149/1.3457852  0.324
2010 Sundararaman R, Tiwari S. A universal semiempirical model for the Fowler-Nordheim programming of charge trapping devices Applied Physics Letters. 96. DOI: 10.1063/1.3279153  0.376
2009 Gokirmak A, Inaltekin H, Tiwari S. Attofarad resolution capacitance-voltage measurement of nanometer scale field effect transistors utilizing ambient noise. Nanotechnology. 20: 335203. PMID 19636094 DOI: 10.1088/0957-4484/20/33/335203  0.678
2007 Kim MK, Chae S, Kim CW, Kim JY, Lee J, Tiwari S. The Effects of the LDD process on Short-channel effects in Nanoscale Charge Trapping Devices Mrs Proceedings. 997. DOI: 10.1557/Proc-0997-I03-13  0.428
2007 Kim MK, Chae S, Kim CW, Lee J, Tiwari S. A Comparison of N+ type and P+ type Polysilicon Gate in High Speed Non-Volatile Memories Mrs Proceedings. 997. DOI: 10.1557/Proc-0997-I03-12  0.435
2007 LIN H, LIU H, KUMAR A, AVCI U, VAN DELDEN JS, TIWARI S. POWER ADAPTIVE CONTROL OF DENSE CONFIGURED SUPER-SELF-ALIGNED BACK-GATE PLANAR TRANSISTORS International Journal of High Speed Electronics and Systems. 17: 143-146. DOI: 10.1142/S0129156407004357  0.731
2007 Kim MK, Tiwari S. Non-Volatile High Speed & Low Power Charge Trapping Devices International Journal of High Speed Electronics and Systems. 17: 147-152. DOI: 10.1142/9789812770332_0023  0.466
2007 Kim SK, Xue L, Tiwari S. Low-Temperature Polymer-Based Three-Dimensional Silicon Integration Ieee Electron Device Letters. 28: 706-709. DOI: 10.1109/Led.2007.901661  0.369
2007 Lin H, Liu H, Kumar A, Avci U, Delden JSV, Tiwari S. Strained-Si Channel Super-Self-Aligned Back-Gate/Double-Gate Planar Transistors Ieee Electron Device Letters. 28: 506-508. DOI: 10.1109/Led.2007.896896  0.747
2007 Gokirmak A, Tiwari S. Accumulated body ultranarrow channel silicon transistor with extreme threshold voltage tunability Applied Physics Letters. 91. DOI: 10.1063/1.2818663  0.672
2006 Lin H, Park YW, Tiwari S. A Compact Single-Walled Carbon Nanotube Transistor Integrated with a Silicon MOSFET Using a Single Common Gate Mrs Proceedings. 963. DOI: 10.1557/Proc-0963-Q14-04  0.394
2006 Lin H, Liu H, Kumar A, Avci U, Van Delden JS, Tiwari S. Super-self-aligned back-gate∕double-gate planar transistors: Novel fabrication approach Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24: 3230. DOI: 10.1116/1.2397067  0.76
2006 Lin H, Tiwari S. Localized charge trapping due to adsorption in nanotube field-effect transistor and its field-mediated transport Applied Physics Letters. 89: 073507. DOI: 10.1063/1.2337104  0.316
2006 Silva H, Tiwari S. Random telegraph signal in nanoscale back-side charge trapping memories Applied Physics Letters. 88. DOI: 10.1063/1.2182070  0.385
2005 Wahl JA, Van Delden JS, Tiwari S. Multiple-fluorophore-specie detection with a tapered Fabry-Perot fluorescence spectrometer. Applied Optics. 44: 5190-7. PMID 16149341 DOI: 10.1364/Ao.44.005190  0.71
2005 Gokirmak A, Tiwari S. Micrometer scale silicon dioxide tunnels for on-chip fluidic sample delivery to nanometer-scale chemical sensors Materials Research Society Symposium Proceedings. 872: 131-136. DOI: 10.1557/Proc-872-J9.1  0.656
2005 Gokirmak A, Tiwari S. A silicon nitride based shallow trench isolation with side-gate for CMOS integration with MEMS components for system-on-chip applications Materials Research Society Symposium Proceedings. 833: 235-240. DOI: 10.1557/Proc-833-G6.9  0.693
2005 Silva H, Tiwari S. Backside storage non-volatile memories: Ultra-thin silicon layer on a complex thin film structure Materials Research Society Symposium Proceedings. 830: 31-35. DOI: 10.1557/Proc-830-D1.4  0.434
2005 Kim SK, Liu CC, Xue L, Tiwari S. Crosstalk reduction in mixed-signal 3-D integrated circuits with interdevice layer ground planes Ieee Transactions On Electron Devices. 52: 1459-1467. DOI: 10.1109/Ted.2005.850641  0.358
2005 Rosenblatt S, Lin H, Sazonova V, Tiwari S, McEuen PL. Mixing at 50 GHz using a single-walled carbon nanotube transistor Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2103391  0.328
2005 Gokirmak A, Tiwari S. Threshold voltage tuning and suppression of edge effects in narrow channel MOSFETs using surrounding buried side-gate Electronics Letters. 41: 157-158. DOI: 10.1049/El:20057152  0.708
2005 Avci U, Tiwari S. A novel compact circuit for 4-PAM energy-efficient high speed interconnect data transmission and reception Microelectronics Journal. 36: 67-75. DOI: 10.1016/J.Mejo.2004.09.005  0.735
2004 Kim SK, Xue L, Tiwari S. Three Dimensional Integration with Benzocyclobutene as the Wafer-Bonding Medium Mrs Proceedings. 833. DOI: 10.1557/Proc-833-G3.5  0.376
2004 Silva H, Kim MK, Avci U, Kumar A, Tiwari S. Nonvolatile Silicon Memory at the Nanoscale Mrs Bulletin. 29: 845-851. DOI: 10.1557/Mrs2004.239  0.742
2004 Silva H, Tiwari S. A nanoscale memory and transistor using backside trapping Ieee Transactions On Nanotechnology. 3: 264-269. DOI: 10.1109/Tnano.2004.828532  0.431
2004 Avci U, Tiwari S. Nanoscale thin single-crystal silicon and its application to electronics Applied Physics Letters. 84: 2406-2408. DOI: 10.1063/1.1689745  0.734
2004 Avci U, Tiwari S. Back-gated MOSFETs with controlled silicon thickness for adaptive threshold-voltage control Electronics Letters. 40: 74-75. DOI: 10.1049/El:20040028  0.752
2003 Tiwari S, Avci UE, Liu CC, Xue L, Kumar A, Kim SK, Silva HG. Are we there yet? Looking beyond the end of scaling in the Nanometer Era Proceedings of Spie. 5118: 456-465. DOI: 10.1117/12.502018  0.716
2003 Xue L, Liu CC, Kim H, Kim SK, Tiwari S. Three-dimensional integration: technology, use, and issues for mixed-signal applications Ieee Transactions On Electron Devices. 50: 601-609. DOI: 10.1109/Ted.2003.810465  0.371
2002 Kim HS, Xue L, Kumar A, Tiwari S. Fabrication and electrical properties of buried tungsten structure for direct three dimensional integration The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2002.P3-22  0.322
2000 Kumar A, Welser JJ, Tiwari S, Rana F, Chan KK. Investigations of Silicon Nano-crystal Floating Gate Memories Mrs Proceedings. 638. DOI: 10.1557/Proc-638-F2.4.1  0.425
2000 Tiwari S, Kumar A, Welser JJ. Straddle-Gate Transistor: A Mosfet In The Limit Of Useful Field-Effect International Journal of High Speed Electronics and Systems. 10: 231-245. DOI: 10.1016/S0129-1564(00)00027-1  0.418
2000 Tiwari S, Wahl J, Silva H, Rana F, Welser J. Small silicon memories: confinement, single-electron,. and interface state considerations Applied Physics a: Materials Science & Processing. 71: 403-414. DOI: 10.1007/S003390000553  0.764
1999 Tiwari S. Single-electron transistor Access Science. DOI: 10.1036/1097-8542.Yb990795  0.375
1999 Tiwari S, Solomon PM, Welser JJ, Jones EC, McFeely FR, Cartier E. CMOS and memories: From 100 nm to 10 nm! Microelectronic Engineering. 46: 3-6. DOI: 10.1016/S0167-9317(99)00004-0  0.424
1998 Tiwari S, Welser JJ, Rana F, Kumar A. Nano-Crystal and Quantum Dot Memories: Device Properties The Japan Society of Applied Physics. 1998: 168-169. DOI: 10.7567/Ssdm.1998.C-3-1  0.323
1998 Tiwari S, Nair R. Computers made to tolerate defects Physics World. 11: 24-26. DOI: 10.1088/2058-7058/11/10/27  0.309
1998 Rana F, Tiwari S, Welser J. Kinetic modelling of electron tunneling processes in quantum dots coupled to field-effect transistors Superlattices and Microstructures. 23: 757-770. DOI: 10.1006/Spmi.1997.0539  0.352
1996 Hanafi HI, Tiwari S, Khan I. Fast and long retention-time nano-crystal memory Ieee Transactions On Electron Devices. 43: 1553-1558. DOI: 10.1109/16.535349  0.378
1996 Tiwari S, Rana F, Chan K, Shi L, Hanafi H. Single charge and confinement effects in nano‐crystal memories Applied Physics Letters. 69: 1232-1234. DOI: 10.1063/1.117421  0.376
1996 Rana F, Tiwari S, Buchanan DA. Self‐consistent modeling of accumulation layers and tunneling currents through very thin oxides Applied Physics Letters. 69: 1104-1106. DOI: 10.1063/1.117072  0.324
1996 Tiwari S, Rana F, Hanafi H, Hartstein A, Crabbé EF, Chan K. A silicon nanocrystals based memory Applied Physics Letters. 68: 1377-1379. DOI: 10.1063/1.116085  0.404
1994 Tiwari S, Woodall JM. Experimental comparison of strained quantum‐wire and quantum‐well laser characteristics Applied Physics Letters. 64: 2211-2213. DOI: 10.1063/1.111676  0.504
1994 Tiwari S, Pettit GD, Milkove KR, Legoues F, Davis RJ, Woodall JM. High efficiency and low threshold current strained V‐groove quantum‐wire lasers Applied Physics Letters. 64: 3536-3538. DOI: 10.1063/1.111264  0.527
1992 Wang Y, Longenbach K, Teich MC, Wang WI, Tiwari S, Hargis MC. AlGaSb/GaSb-based metal-semiconductor-metal and p-i-n photodetectors Semiconductors. 1680: 169-175. DOI: 10.1117/12.137713  0.391
1992 Tiwari S, Burroughes J, Milshtein MS, Tischler MA, Wright SL. Lateral Ga<inf>0.47</inf>In<inf>0.53</inf>As and GaAs p-i-n Photodetectors by Self-Aligned Diffusion Ieee Photonics Technology Letters. 4: 396-398. DOI: 10.1109/68.127226  0.354
1990 Tiwari S, Wright SL, Frank DJ. Compound semiconductor heterostructure bipolar transistors Ibm Journal of Research and Development. 34: 550-567. DOI: 10.1147/Rd.344.0550  0.425
1990 Tiwari S, Wang WI, East JR. An Analytic Theory of the Auger Transistor: A Hot Electron Bipolar Transistor Ieee Transactions On Electron Devices. 37: 1121-1131. DOI: 10.1109/16.52451  0.371
1990 de Lyon TJ, Kash JA, Tiwari S, Woodall JM, Yan D, Pollak FH. Low surface recombination velocity and contact resistance usingp+/pcarbon‐doped GaAs structures Applied Physics Letters. 56: 2442-2444. DOI: 10.1063/1.102903  0.532
1990 Tiwari S, Wright SL. Material properties of p-type GaAs at large dopings Applied Physics Letters. 56: 563-565. DOI: 10.1063/1.102745  0.344
1989 Tiwari S. Frequency Dependence of the Unilateral Gain in Bipolar Transistors Ieee Electron Device Letters. 10: 574-576. DOI: 10.1109/55.43144  0.364
1989 Tiwari S, Frank D. Analysis of the operation of GaAlAs/GaAs HBTs Ieee Transactions On Electron Devices. 36: 2105-2121. DOI: 10.1109/16.40890  0.388
1988 Tiwari S, Ginzberg A, Akhtar S, Wright SL, Marks RF, Kwark YH, Kiehl R. Heterostructure Devices Using Self-Aligned p-Type Diffused Ohmic Contacts Ieee Electron Device Letters. 9: 422-424. DOI: 10.1109/55.765  0.391
1988 Kiehl RA, Tiwari S, Wright SL, Olson MA. p-Channel Quantum-Well Heterostructure MI3 SFET Ieee Electron Device Letters. 9: 309-311. DOI: 10.1109/55.726  0.388
1988 Tiwari S, Wright SL, Batey J. Unpinned GaAs MOS Capacitors and Transistors Ieee Electron Device Letters. 9: 488-490. DOI: 10.1109/55.6954  0.408
1988 Patton GL, Iyer SS, Delage SL, Tiwari S, Stork JMC. Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy Ieee Electron Device Letters. 9: 165-167. DOI: 10.1109/55.677  0.397
1988 Tiwari S. A New Effect at High Currents in Heterostructure Bipolar Transistors Ieee Electron Device Letters. 9: 142-144. DOI: 10.1109/55.2069  0.393
1988 Tiwari S, Frank DJ, Wright SL. Surface recombination in GaAlAs/GaAs heterostructure bipolar transistors Journal of Applied Physics. 64: 5009-5012. DOI: 10.1109/16.8868  0.307
1988 Nathan MI, Dumke WP, Wrenner K, Tiwari S, Wright SL, Jenkins KA. Electron mobility in p-type GaAs Applied Physics Letters. 52: 654-656. DOI: 10.1063/1.99395  0.307
1988 Tiwari S, Frank DJ. Barrier and recombination effects in the base‐emitter junction of heterostructure bipolar transistors Applied Physics Letters. 52: 993-995. DOI: 10.1063/1.99252  0.317
1987 Tiwari S, Wright SL, Kleinsasser AW. Transport and Related Properties of (Ga, Al)As/GaAs Double Heterostructure Bipolar Junction Transistors Ieee Transactions On Electron Devices. 34: 185-198. DOI: 10.1109/T-Ed.1987.22906  0.423
1987 Tiwari S, Wright SL. Symmetric-Gain, Zero-Offset, Self-Aligned, and Refractory-Contact Double HBT's Ieee Electron Device Letters. 8: 417-420. DOI: 10.1109/Edl.1987.26679  0.402
1987 Murakami M, Price WH, Shih YC, Childs KD, Furman BK, Tiwari S. Thermally stable ohmic contacts to n-type GaAs. I. MoGeW contact metal Journal of Applied Physics. 62: 3288-3294. DOI: 10.1063/1.339336  0.354
1986 Tiwari S. Performance of heterostructure FET's in LSI Ieee Transactions On Electron Devices. 33: 554-563. DOI: 10.1109/T-Ed.1986.22532  0.364
1986 Wright SL, Marks RF, Tiwari S, Jackson TN, Baratte H. In situ contacts to GaAs based on InAs Applied Physics Letters. 49: 1545-1547. DOI: 10.1063/1.97277  0.316
1984 Tiwari S. Threshold and Sheet Concentration Sensitivity of High Electron Mobility Transistors Ieee Transactions On Electron Devices. 31: 879-888. DOI: 10.1109/T-Ed.1984.21625  0.395
1984 Tiwari S, Wang WI. p-Channel MODFET's using GaAlAs/GaAs two-dimensional hole gas Ieee Electron Device Letters. 5: 333-335. DOI: 10.1109/Edl.1984.25935  0.326
1983 Tiwari S. IIA-6 Sensitivity of Threshold Voltage and Sheet Carrier Concentration to Material and Electronic Parameters in a HEMT Device Ieee Transactions On Electron Devices. 30: 1568-1569. DOI: 10.1109/T-Ed.1983.21346  0.377
1982 Low TS, Stillman GE, Collins DM, Wolfe CM, Tiwari S, Eastman LF. Spectroscopic identification of Si donors in GaAs Applied Physics Letters. 40: 1034-1036. DOI: 10.1063/1.92986  0.399
1980 Tiwari S, Levy HM, Tiberio R, Eastman LF. WA-B4 Leakage Current in GaAs MESFET's with GaAs and Ga<inf>1−x</inf>Al<inf>x</inf>As Buffer Layers Ieee Transactions On Electron Devices. 27: 2196. DOI: 10.1109/T-Ed.1980.20231  0.432
1980 Tiwari S, Eastman LF, Rathbun L. Physical and materials limitations on burnout voltage of GaAs power MESFET's Ieee Transactions On Electron Devices. 27: 1045-1054. DOI: 10.1109/T-Ed.1980.19985  0.556
1980 Eastman LF, Tiwari S, Shur MS. Design criteria for GaAs MESFETs related to stationary high field domains Solid-State Electronics. 23: 383-389. DOI: 10.1016/0038-1101(80)90206-3  0.533
1979 Pande K, Reep D, Srivastava A, Tiwari S, Borrego JM, Ghandhi SK. Device Quality Polycrystalline Gallium Arsenide on Germanium/Molybdenum Substrates Journal of the Electrochemical Society. 126: 300-304. DOI: 10.1149/1.2129026  0.349
1979 Pande K, Reep D, Srivastava A, Tiwari S, Borrego JM, Ghandhi SK. Device Quality Polycrystalline Gallium Arsenide On Germanium/Molybdenum Substrates Cheminform. 10. DOI: 10.1002/Chin.197921011  0.349
1978 Tiwari S, Ashok S. A simple power control technique Electronics Letters. 14: 393-394. DOI: 10.1049/El:19780265  0.304
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