Year |
Citation |
Score |
2019 |
McCrory DJ, Anders MA, Ryan JT, Shrestha PR, Cheung KP, Lenahan PM, Campbell JP. Slow- and rapid-scan frequency-swept electrically detected magnetic resonance of MOSFETs with a non-resonant microwave probe within a semiconductor wafer-probing station. The Review of Scientific Instruments. 90: 014708. PMID 30709237 DOI: 10.1063/1.5053665 |
0.316 |
|
2018 |
McCrory DJ, Anders MA, Ryan JT, Shrestha PR, Cheung KP, Lenahan PM, Campbell JP. Wafer-Level Electrically Detected Magnetic Resonance: Magnetic Resonance in a Probing Station. Ieee Transactions On Device and Materials Reliability : a Publication of the Ieee Electron Devices Society and the Ieee Reliability Society. 18. PMID 30983909 DOI: 10.1109/Tdmr.2018.2817341 |
0.314 |
|
2018 |
Shrestha PR, Nminibapiel DM, Campbell JP, Ryan JT, Veksler D, Baumgart H, Cheung KP. Analysis and Control of RRAM Overshoot Current Ieee Transactions On Electron Devices. 65: 108-114. DOI: 10.1109/Ted.2017.2776860 |
0.58 |
|
2018 |
Shrestha P, Nminibapiel D, Veksler D, Campbell J, Ryan J, Baumgart H, Cheung K. Parasitic engineering for RRAM control Solid-State Electronics. 150: 41-44. DOI: 10.1016/J.Sse.2018.10.006 |
0.594 |
|
2017 |
Nminibapiel DM, Veksler D, Kim JH, Shrestha PR, Campbell JP, Ryan JT, Baumgart H, Cheung KP. Impact of RRAM Read Fluctuations on the Program-Verify Approach. Ieee Electron Device Letters : a Publication of the Ieee Electron Devices Society. 38: 736-739. PMID 28890601 DOI: 10.1109/Led.2017.2696002 |
0.564 |
|
2017 |
Nminibapiel DM, Veksler D, Shrestha PR, Kim J, Campbell JP, Ryan JT, Baumgart H, Cheung KP. Characteristics of Resistive Memory Read Fluctuations in Endurance Cycling Ieee Electron Device Letters. 38: 326-329. DOI: 10.1109/Led.2017.2656818 |
0.583 |
|
2017 |
Bersuker G, Veksler D, Nminibapiel DM, Shrestha PR, Campbell JP, Ryan JT, Baumgart H, Mason MS, Cheung KP. Toward reliable RRAM performance: macro- and micro-analysis of operation processes Journal of Computational Electronics. 16: 1085-1094. DOI: 10.1007/S10825-017-1105-5 |
0.622 |
|
2017 |
Georgiou V, Veksler D, Ryan JT, Campbell JP, Shrestha PR, Ioannou DE, Cheung KP. Highly Efficient Rapid Annealing of Thin Polar Polymer Film Ferroelectric Devices at Sub-Glass Transition Temperature Advanced Functional Materials. 28: 1704165. DOI: 10.1002/Adfm.201704165 |
0.319 |
|
2014 |
Shrestha PR, Cheung KP, Campbell JP, Ryan JT, Baumgart H. Accurate Fast capacitance measurements for reliable device characterization Ieee Transactions On Electron Devices. 61: 2509-2514. DOI: 10.1109/Ted.2014.2325674 |
0.592 |
|
2012 |
Shrestha P, Ochia A, Cheung KP, Campbell JP, Baumgart H, Harris G. High-Speed Endurance and Switching Measurements for Memristive Switches Electrochemical and Solid-State Letters. 15: H173. DOI: 10.1149/2.002206Esl |
0.565 |
|
2011 |
Gu D, Baumgart H, Tapily K, Shrestha P, Namkoong G, Ao X, Müller F. Precise Control of Highly Ordered Arrays of Nested Semiconductor/Metal Nanotubes Nano Research. 4: 164-170. DOI: 10.1007/S12274-010-0066-9 |
0.682 |
|
2008 |
Tapily K, Jakes JE, Stone DS, Shrestha P, Gu D, Baumgart H, Elmustafa AA. Nanoindentation Investigation of HfO[sub 2] and Al[sub 2]O[sub 3] Films Grown by Atomic Layer Deposition Journal of the Electrochemical Society. 155: H545. DOI: 10.1149/1.2919106 |
0.682 |
|
2008 |
Gu D, Tapily K, Shrestha P, Zhu MY, Celler G, Baumgart H. Experimental Study of ALD HfO[sub 2] Deposited on Strained Silicon-on-Insulator and Standard SOI Journal of the Electrochemical Society. 155: G129. DOI: 10.1149/1.2898696 |
0.674 |
|
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