Janet L. Pan - Publications
Affiliations: | Yale University, New Haven, CT |
Area:
Electronics and Electrical Engineering, Materials Science EngineeringYear | Citation | Score | |||
---|---|---|---|---|---|
2009 | Pan JL. Progress to a Gallium-Arsenide Deep-Center Laser Materials. 2: 1599-1635. DOI: 10.3390/Ma2041599 | 0.515 | |||
2008 | Pan JL, McManis JE, Gupta M, Young MP, Woodall JM. Novel deep centers for high-performance optical materials Applied Physics a: Materials Science and Processing. 90: 105-112. DOI: 10.1007/S00339-007-4322-0 | 0.624 | |||
2006 | Pan JL. Gallium-arsenide deep-level materials for THz and 1.5 μm fiber-optic applications Physica B-Condensed Matter. 376: 540-544. DOI: 10.1016/J.Physb.2005.12.137 | 0.565 | |||
2004 | Pan JL, McManis J, Grober L, Woodall J. Gallium-arsenide deep-level tunnel diode with record negative conductance and record peak current density Solid-State Electronics. 48: 2067-2070. DOI: 10.1016/J.Sse.2004.05.071 | 0.657 | |||
2003 | Pan JL, McManis JE, Osadchy T, Grober L, Woodall JM, Kindlmann PJ. Gallium arsenide deep-level optical emitter for fibre optics. Nature Materials. 2: 375-8. PMID 12738958 DOI: 10.1038/Nmat887 | 0.656 | |||
2003 | Pan J, McManis J, Grober L, Woodall J. Gallium-arsenide deep-level pin tunnel diode with very negative conductance Electronics Letters. 39: 1411. DOI: 10.1049/El:20030895 | 0.657 | |||
2001 | Pan JL. Optical emission from bound states of semiconductor deep-centers. Optics Express. 9: 796-801. PMID 19424317 DOI: 10.1364/Oe.9.000796 | 0.358 | |||
2000 | Pan JL, Fonstad CG. Theory, fabrication and characterization of quantum well infrared photodetectors Materials Science and Engineering R: Reports. 28: 65-147. DOI: 10.1016/S0927-796X(00)00011-5 | 0.412 | |||
2000 | Pan JL, Fonstad CG, Matney K. Measurement of layer width uniformity in quantum well infrared photodetectors by high resolution X-ray techniques Journal of Crystal Growth. 219: 335-345. DOI: 10.1016/S0022-0248(00)00625-4 | 0.314 | |||
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