Year |
Citation |
Score |
2020 |
Voros N, Stan M, Huebner M, Keramidas G. VLSI for Next Generation CE Ieee Consumer Electronics Magazine. 9: 88-89. DOI: 10.1109/Mce.2019.2959747 |
0.371 |
|
2020 |
Vakili H, Sakib MN, Ganguly S, Stan M, Daniels MW, Madhavan A, Stiles MD, Ghosh AW. Temporal Memory with Magnetic Racetracks Ieee Journal On Exploratory Solid-State Computational Devices and Circuits. 1-1. DOI: 10.1109/Jxcdc.2020.3022381 |
0.383 |
|
2019 |
Bo C, Dang V, Xie T, Wadden J, Stan M, Skadron K. Automata Processing in Reconfigurable Architectures Acm Transactions On Reconfigurable Technology and Systems. 12: 1-25. DOI: 10.1145/3314576 |
0.409 |
|
2019 |
Sadredini E, Rahimi R, Verma V, Stan M, Skadron K. A Scalable and Efficient In-Memory Interconnect Architecture for Automata Processing Ieee Computer Architecture Letters. 18: 87-90. DOI: 10.1109/Lca.2019.2909870 |
0.465 |
|
2018 |
Angstadt K, Wadden J, Dang V, Xie T, Kramp D, Weimer W, Stan M, Skadron K. MNCaRT: An Open-Source, Multi-Architecture Automata-Processing Research and Execution Ecosystem Ieee Computer Architecture Letters. 17: 84-87. DOI: 10.1109/Lca.2017.2780105 |
0.367 |
|
2017 |
Luo L, Kabir M, Dao N, Kittiwatanakul S, Cyberey M, Wolf SA, Stan M, Lu J. Spin-torque oscillation in large size nano-magnet with perpendicular magnetic fields Journal of Magnetism and Magnetic Materials. 432: 356-361. DOI: 10.1016/J.Jmmm.2017.02.011 |
0.348 |
|
2016 |
Falsafi B, Stan M, Skadron K, Jayasena N, Chen Y, Tao J, Nair R, Moreno J, Muralimanohar N, Sankaralingam K, Estan C. Near-Memory Data Services Ieee Micro. 36: 6-7. DOI: 10.1109/Mm.2016.9 |
0.414 |
|
2014 |
Percy R, Kittiwatanakul S, Lu J, Stan M, Wolf S, Weikle RM. Method for characterizing the contact resistance of metal-vanadium dioxide thin film interfaces Applied Physics Letters. 105. DOI: 10.1063/1.4886412 |
0.311 |
|
2012 |
Chen E, Apalkov D, Driskill-Smith A, Khvalkovskiy A, Lottis D, Moon K, Nikitin V, Ong A, Tang X, Watts S, Kawakami R, Krounbi M, Wolf SA, Poon SJ, Lu JW, ... ... Stan M, et al. Progress and prospects of spin transfer torque random access memory Ieee Transactions On Magnetics. 48: 3025-3030. DOI: 10.1109/Tmag.2012.2198451 |
0.428 |
|
2010 |
Chen E, Apalkov D, Diao Z, Driskill-Smith A, Druist D, Lottis D, Nikitin V, Tang X, Watts S, Wang S, Wolf SA, Ghosh AW, Lu JW, Poon SJ, Stan M, et al. Advances and future prospects of spin-transfer torque random access memory Ieee Transactions On Magnetics. 46: 1873-1878. DOI: 10.1109/Tmag.2010.2042041 |
0.464 |
|
2004 |
Parikh D, Skadron K, Zhang Y, Stan M. Power-Aware Branch Prediction: Characterization and Design Ieee Transactions On Computers. 53: 168-186. DOI: 10.1109/Tc.2004.1261827 |
0.359 |
|
2002 |
Hamzaoglu F, Ye Y, Keshavarzi A, Zhang K, Narendra S, Borkar S, Stan M, De V. Analysis of dual-VT SRAM cells with full-swing single-ended bit line sensing for on-chip cache Ieee Transactions On Very Large Scale Integration (Vlsi) Systems. 10: 91-95. DOI: 10.1109/92.994983 |
0.38 |
|
Show low-probability matches. |