Year |
Citation |
Score |
2018 |
Seok TJ, Liu Y, Jung HJ, Kim SB, Kim DH, Kim SM, Jang JH, Cho DY, Lee SW, Park TJ. Field-Effect Device Using Quasi Two-Dimensional Electron Gas in Mass-Producible Atomic-Layer-Deposited Al2O3/TiO2 Ultrathin (< 10 nm) Film Heterostructure. Acs Nano. PMID 30204410 DOI: 10.1021/acsnano.8b05891 |
0.363 |
|
2009 |
Lim W, Jang JH, Kim S-, Norton DP, Craciun V, Pearton SJ, Ren F, Chen H. Interface dependent electrical properties of amorphous InGaZnO4 thin film transistors Journal of Vacuum Science & Technology B. 27: 126-129. DOI: 10.1116/1.3058717 |
0.584 |
|
2009 |
Jang JH, Son SY, Lim W, Phen MS, Siebein K, Pearton SJ, Craciun V. Fabrication of compositional graded Si1−xGex layers by using thermal oxidation Applied Physics Letters. 94: 202104. DOI: 10.1063/1.3139070 |
0.467 |
|
2009 |
Jang JH, Kim HS, Norton DP, Craciun V. Study of microstructural evolutions in phosphorus-doped ZnO films grown by pulsed laser deposition Journal of Crystal Growth. 311: 3143-3146. DOI: 10.1016/J.Jcrysgro.2009.03.019 |
0.564 |
|
2008 |
Lim W, Jang JH, Kim S, Norton DP, Craciun V, Pearton SJ, Ren F, Shen H. High performance indium gallium zinc oxide thin film transistors fabricated on polyethylene terephthalate substrates Applied Physics Letters. 93: 082102. DOI: 10.1063/1.2975959 |
0.602 |
|
2008 |
Lim W, Norton DP, Jang JH, Craciun V, Pearton SJ, Ren F. Carrier concentration dependence of Ti∕Au specific contact resistance on n-type amorphous indium zinc oxide thin films Applied Physics Letters. 92: 122102. DOI: 10.1063/1.2902322 |
0.561 |
|
Show low-probability matches. |