| Year |
Citation |
Score |
| 2020 |
Song H, Song H, Eadi SB, Choi H, Shin H, Lee JW, Yang J, Lee H. Experimental optimization of post metal annealing on fully depleted-silicon on insulator tunneling field effect transistor Japanese Journal of Applied Physics. 59. DOI: 10.35848/1347-4065/Ab8E1C |
0.371 |
|
| 2020 |
Yi B, Park Y, Yang J. Physics-based compact model of transient leakage current caused by parasitic bipolar junction transistor in gate-all-around MOSFETs Solid-State Electronics. 164: 107739. DOI: 10.1016/J.Sse.2019.107739 |
0.518 |
|
| 2019 |
Kim JH, Park CH, Kim SM, Yang JW. Physics-Based Capacitance Model of Drift Region in Laterally Diffused Metal-Oxide Semiconductor and Its Implementation with BSIM4. Journal of Nanoscience and Nanotechnology. 19: 6732-6735. PMID 31027019 DOI: 10.1166/Jnn.2019.17113 |
0.333 |
|
| 2018 |
Yi B, Lee BJ, Oh J, Kim J, Kim J, Yang J. Physics-Based Compact Model of Parasitic Bipolar Transistor for Single-Event Transients in FinFETs Ieee Transactions On Nuclear Science. 65: 866-870. DOI: 10.1109/Tns.2018.2796622 |
0.414 |
|
| 2016 |
Yi B, Lee CY, Oh JH, Lee BJ, Seo S, Yang JW. Analytical Model of the Parasitic Bipolar Junction Transistor in Low-Doped Double-Gate FinFETs for Pass-Gate Circuits Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2016.2600625 |
0.53 |
|
| 2015 |
Hwang BW, Yang JW, Lee SH. Explicit analytical current-voltage model for double-gate junctionless transistors Ieee Transactions On Electron Devices. 62: 171-177. DOI: 10.1109/Ted.2014.2371075 |
0.491 |
|
| 2015 |
Choi WS, Choi IT, You BS, Yang JW, Ju MJ, Kim HK. Dye-Sensitized Tandem Solar Cells with Extremely High Open-Circuit Voltage Using Co(II)/Co(III) Electrolyte Israel Journal of Chemistry. 55: 1002-1010. DOI: 10.1002/Ijch.201400204 |
0.349 |
|
| 2014 |
Choi IT, You BS, Eom YK, Ju MJ, Choi WS, Kang SH, Kang MS, Seo KD, Hong JY, Song SH, Yang J, Kim HK. Triarylamine-based dual-function coadsorbents with extended π-conjugation aryl linkers for organic dye-sensitized solar cells Organic Electronics. 15: 3316-3326. DOI: 10.1016/J.Orgel.2014.09.008 |
0.311 |
|
| 2012 |
Nam J, Kang CY, Kim KP, Yeo H, Lee BJ, Seo S, Yang J. Influence of Ionizing Radiation on Short-Channel Effects in Low-Doped Multi-Gate MOSFETs Ieee Transactions On Nuclear Science. 59: 3021-3026. DOI: 10.1109/Tns.2012.2226751 |
0.423 |
|
| 2009 |
Yang JW, Park CS, Smith CE, Adhikari H, Huang J, Heh D, Majhi P, Jammy R. Mitigation of complementary metal-oxide-semiconductor variability with metal gate metal-oxide-semiconductor field-effect transistors Japanese Journal of Applied Physics. 48. DOI: 10.1143/Jjap.48.04C056 |
0.442 |
|
| 2009 |
Lu Z, Fossum JG, Yang J, Harris HR, Trivedi VP, Chu M, Thompson SE. A Simplified Superior Floating-Body/Gate DRAM Cell Ieee Electron Device Letters. 30: 282-284. DOI: 10.1109/Led.2008.2012006 |
0.616 |
|
| 2008 |
Kang CY, Yang J, Oh J, Choi R, Suh YJ, Floresca HC, Kim J, Kim M, Lee BH, Tseng H, Jammy R. Effects of Film Stress Modulation Using TiN Metal Gate on Stress Engineering and Its Impact on Device Characteristics in Metal Gate/High- $k$ Dielectric SOI FinFETs Ieee Electron Device Letters. 29: 487-490. DOI: 10.1109/Led.2008.919782 |
0.386 |
|
| 2007 |
Yang J, Zeitzoff PM, Tseng H. Highly Manufacturable Double-Gate FinFET With Gate-Source/Drain Underlap Ieee Transactions On Electron Devices. 54: 1464-1470. DOI: 10.1109/Ted.2007.896387 |
0.476 |
|
| 2007 |
Oh J, Majhi P, Lee H, Yoo O, Banerjee S, Kang CY, Yang J, Harris R, Tseng H, Jammy R. Improved Electrical Characteristics of Ge-on-Si Field-Effect Transistors With Controlled Ge Epitaxial Layer Thickness on Si Substrates Ieee Electron Device Letters. 28: 1044-1046. DOI: 10.1109/Led.2007.908502 |
0.316 |
|
| 2007 |
Oh J, Majhi P, Kang CY, Yang J, Tseng H, Jammy R. Thermal stability of nanoscale Ge metal-oxide-semiconductor capacitors with ZrO2 high-k gate dielectrics on Ge epitaxial layers Applied Physics Letters. 90: 202102. DOI: 10.1063/1.2740108 |
0.405 |
|
| 2006 |
Yang JW, Pham D, Zeitzoff P, Huff H, Brown G. Optimization of source/drain extension for robust speed performance to process variation in undoped double-gate CMOS International Symposium On Vlsi Technology, Systems, and Applications, Proceedings. 48-49. DOI: 10.1109/VTSA.2006.251061 |
0.325 |
|
| 2006 |
Kim S, Fossum J, Yang J. Modeling and Significance of Fringe Capacitance in Nonclassical CMOS Devices With Gate–Source/Drain Underlap Ieee Transactions On Electron Devices. 53: 2143-2150. DOI: 10.1109/Ted.2006.880369 |
0.661 |
|
| 2005 |
Yang J, Fossum JG. On the feasibility of nanoscale triple-gate CMOS transistors Ieee Transactions On Electron Devices. 52: 1159-1164. DOI: 10.1109/Ted.2005.848109 |
0.683 |
|
| 2004 |
Yang J, Fossum JG, Workman GO, Huang C. A physical model for gate-to-body tunneling current and its effects on floating-body PD/SOI CMOS devices and circuits Solid-State Electronics. 48: 259-270. DOI: 10.1016/S0038-1101(03)00272-7 |
0.665 |
|
| 1999 |
Lee J, Kim H, Yang J, Lee W, Oh J, Oh M, Koh Y. Comparison of hole mobility in LOCOS-isolated thin-film SOI p-channel MOSFET's fabricated on various SOI substrates Ieee Electron Device Letters. 20: 176-178. DOI: 10.1109/55.753758 |
0.347 |
|
| 1998 |
Koh Y, Oh M, Lee J, Yang J, Lee W, Kim H. Body-contacted SOI MOSFET structure and its application to DRAM Ieee Transactions On Electron Devices. 45: 1063-1070. DOI: 10.1109/16.669531 |
0.454 |
|
| 1998 |
Lee J, Nam M, Oh J, Yang J, Lee W, Kim H, Oh M, Koh Y. Effects of buried oxide stress on thin-film silicon-on-insulator metal–oxide–semiconductor field-effect transistor Applied Physics Letters. 72: 677-679. DOI: 10.1063/1.120842 |
0.388 |
|
| 1997 |
Koh Y, Choi J, Nam M, Yang J. Body-contacted SOI MOSFET structure with fully bulk CMOS compatible layout and process Ieee Electron Device Letters. 18: 102-104. DOI: 10.1109/55.556094 |
0.421 |
|
| Show low-probability matches. |