| Year |
Citation |
Score |
| 2020 |
Beilliard Y, Paquette F, Brousseau F, Ecoffey S, Alibart F, Drouin D. Conductive filament evolution dynamics revealed by cryogenic (1.5 K) multilevel switching of CMOS-compatible AlO/TiOresistive memories. Nanotechnology. PMID 32674084 DOI: 10.1088/1361-6528/Aba6B4 |
0.331 |
|
| 2020 |
Merhej M, Ecoffey S, Sadani B, Lee–Sang B, Baron T, David S, Drouin D, Salem B. A fabrication process for self-connected horizontal SiGe nanowires Microelectronic Engineering. 220: 111150. DOI: 10.1016/J.Mee.2019.111150 |
0.396 |
|
| 2020 |
Bioud YA, Rondeau M, Boucherif A, Patriarche G, Drouin D, Arès R. Effect of sintering germanium epilayers on dislocation dynamics: from theory to experimental observation Acta Materialia. DOI: 10.1016/J.Actamat.2020.09.047 |
0.386 |
|
| 2019 |
Bioud YA, Boucherif A, Myronov M, Soltani A, Patriarche G, Braidy N, Jellite M, Drouin D, Arès R. Uprooting defects to enable high-performance III-V optoelectronic devices on silicon. Nature Communications. 10: 4322. PMID 31541107 DOI: 10.1038/S41467-019-12353-9 |
0.427 |
|
| 2018 |
Ayele GT, Monfray S, Ecoffey S, Boeuf F, Cloarec J, Drouin D, Souifi A. Ultrahigh-Sensitive CMOS pH Sensor Developed in the BEOL of Standard 28 nm UTBB FDSOI Ieee Journal of the Electron Devices Society. 6: 1026-1032. DOI: 10.1109/Jeds.2018.2861622 |
0.301 |
|
| 2018 |
Galy P, Lemyre JC, Lemieux P, Arnaud F, Drouin D, Pioro-Ladriere M. Cryogenic Temperature Characterization of a 28-nm FD-SOI Dedicated Structure for Advanced CMOS and Quantum Technologies Co-Integration Ieee Journal of the Electron Devices Society. 6: 594-600. DOI: 10.1109/Jeds.2018.2828465 |
0.337 |
|
| 2018 |
Tetsi E, Philippot G, Majek IB, Aymonier C, Audet J, Lemire R, Bechou L, Drouin D. Ba0.6Sr0.4TiO3 Thin Films Deposited by Spray Coating for High Capacitance Density Capacitors Physica Status Solidi (a). 215: 1800478. DOI: 10.1002/Pssa.201800478 |
0.335 |
|
| 2017 |
Drouin D, Droulers G, Labalette M, Sang BL, Harvey-Collard P, Souifi A, Jeannot S, Monfray S, Pioro-Ladriere M, Ecoffey S. A Fabrication Process for Emerging Nanoelectronic Devices Based on Oxide Tunnel Junctions Journal of Nanomaterials. 2017: 1-8. DOI: 10.1155/2017/8613571 |
0.423 |
|
| 2017 |
Labalette M, Jeannot S, Blonkowski S, Beilliard Y, Ecoffey S, Souifi A, Drouin D. Fabrication of Planar Back End of Line Compatible HfO$_x$ Complementary Resistive Switches Ieee Transactions On Nanotechnology. 16: 745-751. DOI: 10.1109/Tnano.2017.2698205 |
0.363 |
|
| 2017 |
Droulers G, Ecoffey S, Pioro-Ladriere M, Drouin D. Metallic Single Electron Transistors: Impact of Parasitic Capacitances on Small Circuits Ieee Transactions On Electron Devices. 64: 5202-5208. DOI: 10.1109/Ted.2017.2766781 |
0.41 |
|
| 2017 |
Rahhal L, Ayele GT, Monfray S, Cloarec J, Fornacciari B, Pardoux E, Chevalier C, Ecoffey S, Drouin D, Morin P, Garnier P, Boeuf F, Souifi A. High sensitivity pH sensing on the BEOL of industrial FDSOI transistors Solid-State Electronics. 134: 22-29. DOI: 10.1016/J.Sse.2017.05.005 |
0.317 |
|
| 2017 |
Merhej M, Drouin D, Salem B, Baron T, Ecoffey S. Fabrication of top-down gold nanostructures using a damascene process Microelectronic Engineering. 177: 41-45. DOI: 10.1016/J.Mee.2017.02.005 |
0.408 |
|
| 2017 |
Bioud YA, Boucherif A, Belarouci A, Paradis E, Fafard S, Aimez V, Drouin D, Arès R. Fast growth synthesis of mesoporous germanium films by high frequency bipolar electrochemical etching Electrochimica Acta. 232: 422-430. DOI: 10.1016/J.Electacta.2017.02.115 |
0.348 |
|
| 2016 |
Bioud YA, Boucherif A, Belarouci A, Paradis E, Drouin D, Arès R. Chemical Composition of Nanoporous Layer Formed by Electrochemical Etching of p-Type GaAs. Nanoscale Research Letters. 11: 446. PMID 27704487 DOI: 10.1186/S11671-016-1642-Z |
0.307 |
|
| 2016 |
Chatbouri S, Troudi M, Sghaier N, Kalboussi A, Aimez V, Drouin D, Souifi A. Direct exchange between silicon nanocrystals and tunnel oxide traps under illumination on single electron photodetector Semiconductors. 50: 1163-1167. DOI: 10.1134/S1063782616090062 |
0.384 |
|
| 2016 |
Droulers G, Ecoffey S, Pioro-Ladrière M, Drouin D. Effects of aging on nanoscale planar metal-insulator-metal tunnel junctions Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 34: 62203. DOI: 10.1116/1.4967786 |
0.384 |
|
| 2016 |
Sang BL, Gour M, Darnon M, Ecoffey S, Jaouad A, Sadani B, Drouin D, Souifi A. Selective dry etching of TiN nanostructures over SiO2 nanotrenches using a Cl2/Ar/N2 inductively coupled plasma Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 34. DOI: 10.1116/1.4936885 |
0.344 |
|
| 2016 |
Drouin D, Droulers G, Labalette M, Sang BL, Harvey-Collard P, Richard JP, Pioro-Ladriere M, Ecoffey S, Souifi A, Monfray S. The nanodamascene process: A versatile fabrication technique for nanoelectronic applications Ieee-Nano 2015 - 15th International Conference On Nanotechnology. 1262-1266. DOI: 10.1109/NANO.2015.7388860 |
0.315 |
|
| 2015 |
El Hajjam KG, Bounouar MA, Baboux N, Ecoffey S, Guilmain M, Puyoo E, Francis LA, Souifi A, Drouin D, Calmon F. Tunnel junction engineering for optimized metallic single-electron transistor Ieee Transactions On Electron Devices. 62: 2998-3003. DOI: 10.1109/Ted.2015.2452575 |
0.393 |
|
| 2015 |
Diop MD, Paquet MC, Danovitch D, Drouin D. Void-free underfill process with variable frequency microwave for higher throughput in large flip chip package application Ieee Transactions On Device and Materials Reliability. 15: 250-257. DOI: 10.1109/Tdmr.2015.2408211 |
0.325 |
|
| 2015 |
Sang BL, Gour M, Jaouad A, Ecoffey S, Darnon M, Sadani B, Souifi A, Drouin D. Inductively coupled plasma etching of ultra-shallow Si3N4 nanostructures using SF6/C4F8 chemistry Microelectronic Engineering. 141: 68-71. DOI: 10.1016/J.Mee.2015.01.014 |
0.356 |
|
| 2014 |
El Hajjam K, Baboux N, Calmon F, Souifi A, Poncelet O, Francis LA, Ecoffey S, Drouin D. Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 32. DOI: 10.1116/1.4853075 |
0.407 |
|
| 2014 |
Chatbouri S, Troudi M, Sghaier N, Aimez V, Drouin D, Souifi A. Traps contribution on detection time of single electron photodetector (Photo-SET) Semiconductor Science and Technology. 29: 085003. DOI: 10.1088/0268-1242/29/8/085003 |
0.409 |
|
| 2014 |
Harvey-Collard P, Drouin D, Pioro-Ladrière M. A silicon nanocrystal tunnel field effect transistor Applied Physics Letters. 104: 193505. DOI: 10.1063/1.4876765 |
0.397 |
|
| 2014 |
Parekh R, Beauvais J, Drouin D. SET logic driving capability and its enhancement in 3-D integrated SET-CMOS circuit Microelectronics Journal. 45: 1087-1092. DOI: 10.1016/J.Mejo.2014.05.020 |
0.732 |
|
| 2013 |
Guilmain M, Labbaye T, Dellenbach F, Nauenheim C, Drouin D, Ecoffey S. A damascene platform for controlled ultra-thin nanowire fabrication. Nanotechnology. 24: 245305. PMID 23696290 DOI: 10.1088/0957-4484/24/24/245305 |
0.421 |
|
| 2013 |
Bilousov OV, Geaney H, Carvajal JJ, Zubialevich VZ, Parbrook PJ, Giguere A, Drouin D, Diaz F, Aguilo M, O'Dwyer C. Fabrication of p-type porous GaN on silicon and epitaxial GaN Applied Physics Letters. 103: 112103. DOI: 10.1063/1.4821191 |
0.339 |
|
| 2013 |
Harvey-Collard P, Jaouad A, Drouin D, Pioro-Ladrière M. Inductively Coupled Plasma etching of amorphous silicon nanostructures over nanotopography using C4F8/SF6 chemistry Microelectronic Engineering. 110: 408-413. DOI: 10.1016/J.Mee.2013.02.099 |
0.444 |
|
| 2013 |
Gerbedoen J, Aliane A, Giguère A, Drouin D, Ares R, Aimez V. All evaporation submicron lift-off lithography process with negative e-beam QSR-5 resist Microelectronic Engineering. 103: 123-125. DOI: 10.1016/J.Mee.2012.10.006 |
0.454 |
|
| 2012 |
Bilousov OV, Carvajal JJ, Drouin D, Mateos X, Díaz F, Aguiló M, O'Dwyer C. Reduced workfunction intermetallic seed layers allow growth of porous n-GaN and low resistivity, ohmic electron transport. Acs Applied Materials & Interfaces. 4: 6927-34. PMID 23167596 DOI: 10.1021/Am3020668 |
0.371 |
|
| 2012 |
Demers H, Poirier-Demers N, Phillips MR, de Jonge N, Drouin D. Three-dimensional electron energy deposition modeling of cathodoluminescence emission near threading dislocations in GaN and electron-beam lithography exposure parameters for a PMMA resist. Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada. 18: 1220-8. PMID 23146129 DOI: 10.1017/S1431927612013414 |
0.375 |
|
| 2012 |
Carvajal JJ, Bilousov OV, Drouin D, Aguiló M, Díaz F, Rojo JC. Chemical vapor deposition of porous GaN particles on silicon. Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada. 18: 905-11. PMID 22831653 DOI: 10.1017/S1431927612001134 |
0.374 |
|
| 2012 |
Demers H, Ramachandra R, Drouin D, de Jonge N. The probe profile and lateral resolution of scanning transmission electron microscopy of thick specimens. Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada. 18: 582-90. PMID 22564444 DOI: 10.1017/S1431927612000232 |
0.345 |
|
| 2012 |
Jouvet N, Bounouar MA, Ecoffey S, Nauenheim C, Beaumont A, Monfray S, Ruediger A, Calmon F, Souifi A, Drouin D. Recent developments on 3D integration of metallic set onto CMOS process for memory application International Journal of Nanoscience. 11. DOI: 10.1142/S0219581X12400248 |
0.375 |
|
| 2012 |
Parekh R, Beaumont A, Beauvais J, Drouin D. Simulation and design methodology for hybrid SET-CMOS integrated logic at 22-nm room-temperature operation Ieee Transactions On Electron Devices. 59: 918-923. DOI: 10.1109/Ted.2012.2183374 |
0.743 |
|
| 2012 |
Xuan W, Beaumont A, Guilmain M, Bounouar MA, Baboux N, Etzkorn J, Drouin D, Calmon F. Static and dynamic modeling of single-electron memory for circuit simulation Ieee Transactions On Electron Devices. 59: 212-220. DOI: 10.1109/Ted.2011.2173347 |
0.303 |
|
| 2012 |
Solanki A, Gentile P, Calvo V, Rosaz G, Salem B, Aimez V, Drouin D, Pauc N. Geometrical control of photocurrent in active Si nanowire devices Nano Energy. 1: 714-722. DOI: 10.1016/J.Nanoen.2012.05.010 |
0.408 |
|
| 2011 |
Demers H, Poirier-Demers N, Couture AR, Joly D, Guilmain M, de Jonge N, Drouin D. Three-dimensional electron microscopy simulation with the CASINO Monte Carlo software. Scanning. 33: 135-46. PMID 21769885 DOI: 10.1017/S143192761100393X |
0.323 |
|
| 2011 |
Ecoffey S, Guilmain M, Morissette JF, Bourque F, Pont J, Sang BL, Drouin D. Technology platform for the fabrication of titanium nanostructures Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3657517 |
0.477 |
|
| 2011 |
Ayari-Kanoun A, Jaouad A, Souifi A, Drouin D, Beauvais J. Silicon nitride nanotemplate fabrication using inductively coupled plasma etching process Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 29: 51802. DOI: 10.1116/1.3628593 |
0.744 |
|
| 2011 |
Droulers G, Beaumont A, Beauvais J, Drouin D. Spectroscopic ellipsometry on thin titanium oxide layers grown on titanium by plasma oxidation Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3553209 |
0.675 |
|
| 2011 |
Guilmain M, Jaouad A, Ecoffey S, Drouin D. SiO2 shallow nanostructures ICP etching using ZEP electroresist Microelectronic Engineering. 88: 2505-2508. DOI: 10.1016/J.Mee.2011.02.032 |
0.432 |
|
| 2010 |
Demers H, Poirier-Demers N, Drouin D, Jonge Nd. Simulating STEM Imaging of Nanoparticles in Micrometers-Thick Substrates Microscopy and Microanalysis. 16: 795-804. PMID 20961483 DOI: 10.1017/S1431927610094080 |
0.307 |
|
| 2010 |
de Jonge N, Poirier-Demers N, Demers H, Peckys DB, Drouin D. Nanometer-resolution electron microscopy through micrometers-thick water layers. Ultramicroscopy. 110: 1114-9. PMID 20542380 DOI: 10.1016/J.Ultramic.2010.04.001 |
0.32 |
|
| 2010 |
Sieutat C, Leclercq JL, Letartre X, Callard S, Gendry M, Grenet G, Naji K, Regreny P, Rojo-Romeo P, Viktorovitch P, Beaudin G, Cloutier M, Drouin D, Aimez V. 3D harnessing of light with photon cage Proceedings of Spie. 7712. DOI: 10.1117/12.854428 |
0.335 |
|
| 2010 |
Beaumont A, Dubuc C, Beauvais J, Drouin D. Direct-write electron beam lithography in silicon dioxide at low energy Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: 940-945. DOI: 10.1116/1.3478304 |
0.707 |
|
| 2010 |
Demers H, Poirier-Demers N, Jonge Nd, Drouin D. CASINO Monte Carlo simulations of Scanning Transmission Electron Microscopy Microscopy and Microanalysis. 16: 258-259. DOI: 10.1017/S1431927610059490 |
0.323 |
|
| 2010 |
Jonge Nd, Ramachandra R, Northan B, Poirier-Demers N, Drouin D. Three-Dimensional Aberration-Corrected Scanning Transmission Electron Microscopy of Biological Specimens Microscopy and Microanalysis. 16: 848-849. DOI: 10.1017/S1431927610055753 |
0.328 |
|
| 2010 |
Méndez M, Carvajal JJ, Cesteros Y, Marsal LF, Martínez-Ferrero E, Giguere A, Drouin D, Salagre P, Formentín P, Pallarès J, Aguiló M, Díaza F. Photoluminescence and cathodoluminescence of Eu:La2O3 nanoparticles synthesized by several methods Physics Procedia. 8: 114-120. DOI: 10.1016/J.Phpro.2010.10.021 |
0.307 |
|
| 2009 |
Beaumont A, Dubuc C, Beauvais J, Drouin D. Room temperature single-electron transistor featuring gate-enhanced ON-state current Ieee Electron Device Letters. 30: 766-768. DOI: 10.1109/Led.2009.2021493 |
0.71 |
|
| 2009 |
Ayari-Kanoun A, Drouin D, Beauvais J, Lysenko V, Nychyporuk T, Souifi A. Organization of silicon nanocrystals by localized electrochemical etching Applied Physics Letters. 95: 153105. DOI: 10.1063/1.3247884 |
0.755 |
|
| 2009 |
Phillips M, Drouin D, Moody S, Ton-That C. Imaging Fundamental Electronic Excitations at High Spatial Resolution Using Scanning Cathodoluminescence Microscopy Microscopy and Microanalysis. 15: 670-671. DOI: 10.1017/S1431927609098614 |
0.321 |
|
| 2009 |
Dubuc C, Beaumont A, Beauvais J, Drouin D. Current conduction models in the high temperature single-electron transistor Solid-State Electronics. 53: 478-482. DOI: 10.1016/J.Sse.2009.03.003 |
0.682 |
|
| 2008 |
Dubuc C, Beauvais J, Drouin D. A nanodamascene process for advanced single-electron transistor fabrication Ieee Transactions On Nanotechnology. 7: 68-73. DOI: 10.1109/Tnano.2007.913430 |
0.726 |
|
| 2007 |
Drouin D, Couture AR, Joly D, Tastet X, Aimez V, Gauvin R. CASINO V2.42: a fast and easy-to-use modeling tool for scanning electron microscopy and microanalysis users. Scanning. 29: 92-101. PMID 17455283 DOI: 10.1002/Sca.20000 |
0.308 |
|
| 2007 |
Dubuc C, Beauvais J, Drouin D. Single-electron transistors with wide operating temperature range Applied Physics Letters. 90. DOI: 10.1063/1.2713171 |
0.708 |
|
| 2007 |
Awad Y, Lavallee E, Beauvais J, Drouin D, Mun LK, Yang P, Cloutier M, Turcotte D. Nickel pulse reversal plating for image reversal of ultrathin electron beam resist Thin Solid Films. 515: 3040-3045. DOI: 10.1016/J.Tsf.2006.08.016 |
0.668 |
|
| 2006 |
Gauvin R, Hovington P, Drouin D. The effect of fast secondary electrons on x-ray microanalysis in the scanning electron microscope. Scanning. 21: 238-245. PMID 10483878 DOI: 10.1002/Sca.4950210403 |
0.337 |
|
| 2006 |
Dubuc C, Beauvais J, Drouin D. A Nanodamascene Process to be used as a Building Block for Nanodevices Mrs Proceedings. 961. DOI: 10.1557/Proc-0961-O10-07 |
0.728 |
|
| 2006 |
Pauc N, Phillips MR, Aimez V, Drouin D. Carrier recombination near threading dislocations in GaN epilayers by low voltage cathodoluminescence Applied Physics Letters. 89: 161905. DOI: 10.1063/1.2357881 |
0.341 |
|
| 2006 |
Pauc N, Phillips M, Aimez V, Drouin D. Carrier diffusion processes near threading dislocations in GaN and GaN:Si characterized by low voltage cathodoluminescence Superlattices and Microstructures. 40: 557-561. DOI: 10.1016/J.Spmi.2006.07.024 |
0.362 |
|
| 2006 |
Hovington P, Gauvin R, Drouin D. Choosing the optimum accelerating voltage (EO) to visualize submicron precipitates with a field emission scanning electron microscope Scanning. 19: 438-447. DOI: 10.1002/Sca.4950190607 |
0.352 |
|
| 2006 |
Hovington P, Drouin D, Gauvin R. CASINO: A new monte carlo code in C language for electron beam interaction —part I: Description of the program Scanning. 19: 1-14. DOI: 10.1002/Sca.4950190101 |
0.357 |
|
| 2005 |
Drouin D, Lavallée E, Cloutier M, Mun LK, Beauvais J, Griffin B. Sub-50nm Metrology Control in the Fabrication Processing of Quartz-based Nanoimprint Templates by Variable Pressure SEM Imaging Microscopy and Microanalysis. 11: 394-395. DOI: 10.1017/S1431927605510043 |
0.657 |
|
| 2004 |
Mun LK, Drouin D, Lavallée E, Beauvais J. The impact of charging on low-energy electron beam lithography. Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada. 10: 804-9. PMID 19780323 DOI: 10.1017/S1431927604040711 |
0.659 |
|
| 2004 |
Kelkar PS, Beauvais J, Lavallée E, Drouin D, Cloutier M, Turcotte D, Yang P, Mun LK, Legario R, Awad Y, Aimez V. Nano patterning on optical fiber and laser diode facet with dry resist Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 22: 743. DOI: 10.1116/1.1667503 |
0.69 |
|
| 2004 |
Awad Y, Lavallée E, Lau KM, Beauvais J, Drouin D, Cloutier M, Turcotte D, Yang P, Kelkar P. Arrays of holes fabricated by electron-beam lithography combined with image reversal process using nickel pulse reversal plating Journal of Vacuum Science and Technology. 22: 1040-1043. DOI: 10.1116/1.1647589 |
0.718 |
|
| 2004 |
Barba D, Aimez V, Beauvais J, Beerens J, Drouin D, Chicoine M, Schiettekatte F. Raman study of As outgassing and damage induced by ion implantation in Zn-doped GaAs Journal of Applied Physics. 96: 4890-4893. DOI: 10.1063/1.1803615 |
0.637 |
|
| 2004 |
Cota-Sanchez G, Soucy G, Huczko A, Beauvais J, Drouin D. Effect of Iron Catalyst on the Synthesis of Fullerenes and Carbon Nanotubes in Induction Plasma The Journal of Physical Chemistry B. 108: 19210-19217. DOI: 10.1021/Jp047629Z |
0.635 |
|
| 2002 |
Lavallée E, Beauvais J, Drouin D, Cloutier M, Yang P, Awad Y, Turcotte D, Lafrance P. Fabrication of X-Ray Masks Using the Silicon Direct Write Electron-Beam Lithography Process and Complementary Electron-Sensitive Resists Japanese Journal of Applied Physics. 41: 4122-4126. DOI: 10.1143/Jjap.41.4122 |
0.725 |
|
| 2002 |
Awad Y, Lavallee E, Beauvais J, Drouin D, Yang P, Turcotte D, Mun LK. Fabrication of x-ray masks using evaporated electron sensitive layers for back patterning of membranes Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 20: 3040-3043. DOI: 10.1116/1.1523399 |
0.681 |
|
| 2002 |
Lahkak N, Drouin D, Beerens J, Magny P, Lefebvre J. Study of self-assembled InAs quantum dots on InP nano-templates by low voltage scanning electron microscopy cathodoluminescence Microscopy and Microanalysis. 8: 712-713. DOI: 10.1017/S1431927602106192 |
0.311 |
|
| 2001 |
Drouin D, Couture AR, Gauvin R. “Casino V2.0 : An Advance Simulation Tool for Scanning Electron Microscope Users” Microscopy and Microanalysis. 7: 684-685. DOI: 10.1017/S1431927600029494 |
0.336 |
|
| 2000 |
Lavallée E, Beauvais J, Drouin D, Corbin J. Study of the effect of layer thickness, beam energy, and metal density on the resistless silicide direct-write electron-beam lithography process for the fabrication of nanostructures Journal of Vacuum Science and Technology. 18: 681-684. DOI: 10.1116/1.582247 |
0.71 |
|
| 2000 |
Lavallee E, Beauvais J, Drouin D. Fabrication of masks for DUV and EUV lithography using silicide direct-write electron beam lithography process Electronics Letters. 36: 1589-1590. DOI: 10.1049/El:20001097 |
0.723 |
|
| 2000 |
Griffin BJ, Browne JR, Egerton-Warburton L, Drouin D. 'Secondary' Electron Detector Design and Positioning in the Variable Pressure Scanning Electron Microscope: the Colour Option Microscopy and Microanalysis. 6: 772-773. DOI: 10.1017/S1431927600036357 |
0.327 |
|
| 1999 |
Phillips MR, Toth M, Drouin D. Depletion Layer Imaging Using A Gaseous Secondary Electron Detector In An Environmental Scanning Electron Microscope Applied Physics Letters. 75: 76-78. DOI: 10.1063/1.124281 |
0.354 |
|
| 1999 |
Lavallee E, Beavais J, Drouin D, Beerens J, Morris D, Chaker M. Fabrication of silicide structures by silicide direct-write electron-beam lithography process (SiDWEL) on thin silicon nitride membranes and on tantalum substrates Electronics Letters. 35: 2027-2028. DOI: 10.1049/El:19991394 |
0.482 |
|
| 1999 |
Phillips MR, Toth M, Drouin D. A Novel Technique for Probe Intensity Profile Characterisation in the Environmental Scanning Electron Microscope Microscopy and Microanalysis. 5: 294-295. DOI: 10.1017/S1431927600014793 |
0.324 |
|
| 1999 |
Griffin BJ, Browne JR, Drouin D, Scharf D. Advances in Environmental Scanning Electron Microscopy: Semiconductor/Thin Fim Applications, Cathodoluminescence (CL) Spectroscopy, and Detector Quantum Efficiency (DQE) Comparisons. Microscopy and Microanalysis. 5: 278-279. DOI: 10.1017/S1431927600014719 |
0.327 |
|
| 1997 |
Drouin D, Beauvais J, Lavallée E, Michel S, Mouine J, Gauvin R. Resistless electron beam lithography process for the fabrication of sub-50 nm silicide structures Journal of Vacuum Science & Technology B. 15: 2269-2273. DOI: 10.1116/1.589627 |
0.737 |
|
| 1997 |
Drouin D, Beauvais J, Lemire R, Lavallée E, Gauvin R, Caron M. Method for fabricating submicron silicide structures on silicon using a resistless electron beam lithography process Applied Physics Letters. 70: 3020-3022. DOI: 10.1063/1.118736 |
0.736 |
|
| 1997 |
Drouin D, Beauvais J, Gauvin R. Characterization of Variations in Schottky Barrier Height in Semiconductor Devices using EBIC Technique Microscopy and Microanalysis. 3: 501-502. DOI: 10.1017/S1431927600009399 |
0.658 |
|
| 1997 |
Drouin D, Hovington P, Gauvin R, Beauvais J. Visualizing Sub-Micron Burried Metal Line in VLSI Devices using a SEM Microscopy and Microanalysis. 3: 499-500. DOI: 10.1017/S1431927600009387 |
0.638 |
|
| 1992 |
Gauvin R, Drouin D. Fractal behaviour of electron scattering in solids Scanning. 14: 313-323. DOI: 10.1002/Sca.4950140603 |
0.341 |
|
| Show low-probability matches. |