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Sangsig Kim - Publications

Affiliations: 
1996 Columbia University, New York, NY 
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257 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Park Y, Cho K, Yang S, Park T, Park S, Song HE, Kim SM, Kim S. Performance of hybrid energy devices consisting of photovoltaic cells and thermoelectric generators. Acs Applied Materials & Interfaces. PMID 31999087 DOI: 10.1021/Acsami.9B18652  0.314
2020 Yang S, Cho K, Kim S. Enhanced Thermoelectric Characteristics of Ag2Se Nanoparticle Thin Films by Embedding Silicon Nanowires Energies. 13: 3072. DOI: 10.3390/En13123072  0.316
2020 Lee H, Cho K, Kim D, Kim S. Electrical characteristics of bendable a-ITGZO TFTs on colorless polyimide substrates Semiconductor Science and Technology. 35: 65014. DOI: 10.1088/1361-6641/Ab8439  0.312
2020 Yang S, Cho K, Kim S. Energy devices generating and storing electricity from finger and solar thermal energy Nano Energy. 69: 104458. DOI: 10.1016/J.Nanoen.2020.104458  0.309
2020 Woo S, Kim S. Device design of single-gated feedback field-effect transistors to achieve latch-up behaviors with high current gains Current Applied Physics. 20: 1156-1162. DOI: 10.1016/J.Cap.2020.07.020  0.338
2020 Woo S, Jeon J, Kim S. A SPICE model of p ‐channel silicon tunneling field‐effect transistors for logic applications International Journal of Numerical Modelling-Electronic Networks Devices and Fields. DOI: 10.1002/Jnm.2793  0.306
2019 Lee BH, Cho KS, Lee DY, Sohn A, Lee JY, Choo H, Park S, Kim SW, Kim S, Lee SY. Investigation on energy bandgap states of amorphous SiZnSnO thin films. Scientific Reports. 9: 19246. PMID 31848440 DOI: 10.1038/S41598-019-55807-2  0.312
2019 Woo S, Kim S. Covered Source–Channel Tunnel Field-Effect Transistors With Trench Gate Structures Ieee Transactions On Nanotechnology. 18: 114-118. DOI: 10.1109/Tnano.2018.2882859  0.361
2019 Kang H, Cho J, Kim Y, Lim D, Woo S, Cho K, Kim S. Nonvolatile and Volatile Memory Characteristics of a Silicon Nanowire Feedback Field-Effect Transistor With a Nitride Charge-Storage Layer Ieee Transactions On Electron Devices. 66: 3342-3348. DOI: 10.1109/Ted.2019.2924961  0.312
2019 Lim D, Kim S. Optically tunable feedback operation of silicon nanowire transistors Semiconductor Science and Technology. 34: 115014. DOI: 10.1088/1361-6641/Ab3586  0.339
2019 Lee BH, Lee DY, Lee JY, Park S, Kim S, Lee SY. Investigation on the improvement of stability of nitrogen doped amorphous SiInZnO thin-film transistors Solid-State Electronics. 158: 59-63. DOI: 10.1016/J.Sse.2019.05.013  0.319
2019 Lee BH, Hong SY, Kim DH, Kim S, Kwon HI, Lee SY. Investigation on trap density depending on Si ratio in amorphous SiZnSnO thin-film transistors Physica B-Condensed Matter. 574: 311629. DOI: 10.1016/J.Physb.2019.08.006  0.339
2019 Yang K, Cho K, Yang S, Park Y, Kim S. A laterally designed all-in-one energy device using a thermoelectric generator-coupled micro supercapacitor Nano Energy. 60: 667-672. DOI: 10.1016/J.Nanoen.2019.04.016  0.337
2019 Lee BH, Kim S, Lee SY. Dependency of Si Content on the Performance of Amorphous SiZnSnO Thin Film Transistor Based Logic Circuits for Next-Generation Integrated Circuits Transactions On Electrical and Electronic Materials. 20: 175-180. DOI: 10.1007/S42341-019-00107-9  0.348
2019 Lim D, Kim S. Polarity control of carrier injection for nanowire feedback field-effect transistors Nano Research. 12: 2509-2514. DOI: 10.1007/S12274-019-2477-6  0.325
2018 Kim Y, Lim D, Cho J, Kim S. Feedback and tunneling operations of a p+-i-n+ silicon nanowire field-effect transistor. Nanotechnology. PMID 30102245 DOI: 10.1088/1361-6528/Aad9Df  0.33
2018 Yoo J, Kim Y, Lim D, Kim S. Electrical characteristics of silicon nanowire CMOS inverters under illumination. Optics Express. 26: 3527-3534. PMID 29401880 DOI: 10.1364/Oe.26.003527  0.372
2018 Lim D, Kim M, Kim Y, Cho J, Kim S. Nondestructive Readout Memory Characteristics of Silicon Nanowire Biristors Ieee Transactions On Electron Devices. 65: 1578-1582. DOI: 10.1109/Ted.2018.2802492  0.338
2018 Lee S, Lee W, Jang B, Kim T, Bae J, Cho K, Kim S, Jang J. Sol-Gel Processed p-Type CuO Phototransistor for a Near-Infrared Sensor Ieee Electron Device Letters. 39: 47-50. DOI: 10.1109/Led.2017.2779816  0.355
2018 Kim Y, Kim S. Effect of substrates on the electrical characteristics of a silicon nanowire feedback field-effect transistor under bending stresses Semiconductor Science and Technology. 33: 105009. DOI: 10.1088/1361-6641/Aadfb5  0.399
2018 Oh H, Cho K, Kim S. Effect of physical densification on sub-gap density of states in amorphous InGaZnO thin films Superlattices and Microstructures. 121: 33-37. DOI: 10.1016/J.Spmi.2018.07.021  0.351
2018 Woo S, Kim M, Oh H, Cho K, Kim S. Bending-strain-induced localized density of states in amorphous indium-gallium-zinc-oxide thin-film transistors Superlattices and Microstructures. 120: 60-66. DOI: 10.1016/J.Spmi.2018.05.009  0.354
2018 Park H, Cho K, Oh H, Kim S. Effect of stiffness modulation on mechanical stability of stretchable a-IGZO TFTs Superlattices and Microstructures. 117: 169-172. DOI: 10.1016/J.Spmi.2018.03.026  0.353
2018 Yang S, Cho K, Park Y, Kim S. Bendable thermoelectric generators composed of p- and n-type silver chalcogenide nanoparticle thin films Nano Energy. 49: 333-337. DOI: 10.1016/J.Nanoen.2018.04.065  0.345
2018 Yoo S, Kim S, Song YW. Lithography-free fabrication of field effect transistor channels with randomly contact-printed black phosphorus flakes Materials Science in Semiconductor Processing. 86: 58-62. DOI: 10.1016/J.Mssp.2018.06.010  0.388
2018 Woo S, Kim M, Kim S. A SPICE model of silicon tunneling field-effect transistors Microelectronic Engineering. 191: 66-71. DOI: 10.1016/J.Mee.2018.01.028  0.308
2018 Moon J, Kim Y, Lim D, Kim S. Silicon nanowire CMOS NOR logic gates featuring one-volt operation on bendable substrates Nano Research. 11: 2625-2631. DOI: 10.1007/S12274-017-1889-4  0.365
2018 Moon J, Kim Y, Lim D, Im K, Kim S. Silicon nanowire ratioed inverters on bendable substrates Nano Research. 11: 2586-2591. DOI: 10.1007/S12274-017-1884-9  0.371
2018 In C, Kim D, Roh Y, Kim SW, Lee H, Park Y, Kim S, Kim UJ, Choi H, Hwang SW. Photocurrent Engineering of Silicon Nanowire Field-Effect Transistors by Ultrathin Poly(3-hexylthiophene) Advanced Materials Interfaces. 5: 1801270. DOI: 10.1002/Admi.201801270  0.314
2017 Choi JY, Heo K, Cho KS, Hwang SW, Chung J, Kim S, Lee BH, Lee SY. Effect of Si on the Energy Band Gap Modulation and Performance of Silicon Indium Zinc Oxide Thin-Film Transistors. Scientific Reports. 7: 15392. PMID 29133806 DOI: 10.1038/S41598-017-15331-7  0.404
2017 Lim D, Kim M, Kim Y, Kim S. Memory characteristics of silicon nanowire transistors generated by weak impact ionization. Scientific Reports. 7: 12436. PMID 28963456 DOI: 10.1038/S41598-017-12347-X  0.354
2017 Kim M, Kim Y, Lim D, Woo S, Cho K, Kim S. Steep switching characteristics of single-gated feedback field-effect transistors. Nanotechnology. 28: 055205. PMID 28032609 DOI: 10.1088/1361-6528/28/5/055205  0.357
2017 Yoo J, Kim Y, Lim D, Kim S. Characteristics of nanowire CMOS inverter with gate overlap The Transactions of the Korean Institute of Electrical Engineers. 66: 1494-1498. DOI: 10.5370/Kiee.2017.66.10.1494  0.35
2017 Choi JY, Lee BH, Kim S, Lee SY. Metal capping on silicon indium zinc oxide semiconductor for high performance thin film transistors processed at 150 °c Journal of Nanoscience and Nanotechnology. 17: 3397-3400. DOI: 10.1166/Jnn.2017.14053  0.332
2017 Oh H, Cho K, Kim S. Electrical characteristics of a bendable a-Si:H thin film transistor with overlapped gate and source/drain regions Applied Physics Letters. 110: 93502. DOI: 10.1063/1.4977564  0.37
2017 Yang S, Cho K, Yun J, Choi J, Kim S. Thermoelectric characteristics of γ-Ag2Te nanoparticle thin films on flexible substrates Thin Solid Films. 641: 65-68. DOI: 10.1016/J.Tsf.2017.01.068  0.328
2017 Kim M, Oh H, Park S, Cho K, Kim S. Mechanical strain-induced defect states in amorphous silicon channel layers of thin-film transistors Thin Solid Films. 641: 43-46. DOI: 10.1016/J.Tsf.2017.01.049  0.371
2017 Kim M, Kim Y, Lim D, Woo S, Im K, Cho J, Kang H, Kim S. Impact ionization and tunneling operations in charge-plasma dopingless device Superlattices and Microstructures. 111: 796-805. DOI: 10.1016/J.Spmi.2017.07.041  0.321
2017 Kim S, Kim M, Woo S, Kang H, Kim S. Performance of ring oscillators composed of gate-all-around FETs with varying numbers of nanowire channels using TCAD simulation Current Applied Physics. 18: 340-344. DOI: 10.1016/J.Cap.2017.12.012  0.318
2017 Yun J, Cho K, Park Y, Yang S, Choi J, Kim S. Thermoelectric characteristics of nanocomposites made of HgSe and Ag nanoparticles for flexible thermoelectric devices Nano Research. 10: 683-689. DOI: 10.1007/S12274-016-1327-Z  0.309
2017 Choi J, Cho K, Yun J, Park Y, Yang S, Kim S. Large Voltage Generation of Flexible Thermoelectric Nanocrystal Thin Films by Finger Contact Advanced Energy Materials. 7: 1700972. DOI: 10.1002/Aenm.201700972  0.375
2017 Choi J, Cho K, Kim S. Flexible Thermoelectric Generators Composed of n-and p-Type Silicon Nanowires Fabricated by Top-Down Method Advanced Energy Materials. 7: 1602138. DOI: 10.1002/Aenm.201602138  0.307
2016 Choi JY, Heo K, Cho KS, Hwang SW, Kim S, Lee SY. Engineering of band gap states of amorphous SiZnSnO semiconductor as a function of Si doping concentration. Scientific Reports. 6: 36504. PMID 27812035 DOI: 10.1038/Srep36504  0.363
2016 Choi J, Jeon Y, Cho K, Kim S. Field-effect modulation of the thermoelectric characteristics of silicon nanowires on plastic substrates. Nanotechnology. 27: 485401. PMID 27796271 DOI: 10.1088/0957-4484/27/48/485401  0.346
2016 Kim K, Jeon Y, Cho K, Kim S. Enhancement of Trap-Assisted Green Electroluminescence Efficiency in ZnO/SiO2/Si Nanowire Light-Emitting Diodes on Bendable Substrates by Piezophototronic Effect. Acs Applied Materials & Interfaces. PMID 26796532 DOI: 10.1021/Acsami.5B11053  0.362
2016 Yang S, Cho K, Yun J, Choi J, Kim S. Effect of Annealing Temperature on Thermoelectric Properties of Ag 2 Se Nanoparticle Thin Films The Transactions of the Korean Institute of Electrical Engineers. 65: 611-616. DOI: 10.5370/Kiee.2016.65.4.611  0.324
2016 Park S, Cho K, Oh H, Kim S. Fabrication and Electrical Characteristics of Transparent and Bendable a-IGZO Thin-film Transistors Journal of the Korean Institute of Electrical and Electronic Material Engineers. 29: 120-124. DOI: 10.4313/Jkem.2016.29.2.120  0.383
2016 Kim Y, Jeon Y, Lim D, Kim S. Fatigue behaviors of silicon nanowire field-effect transistors on bendable substrate Journal of Nanoscience and Nanotechnology. 16: 12823-12826. DOI: 10.1166/Jnn.2016.13671  0.312
2016 Lim D, Jeon Y, Kim M, Kim Y, Kim S. Electrical characteristics of SnO2 thin-film transistors fabricated on bendable substrates using reactive magnetron sputtering Journal of Nanoscience and Nanotechnology. 16: 11697-11700. DOI: 10.1166/Jnn.2016.13576  0.363
2016 Yang S, Cho K, Yun J, Choi J, Kim S. Improved thermoelectric power of HgTe nanoparticle thin films embedded with Ag nanoparticles Journal of Nanoscience and Nanotechnology. 16: 10566-10568. DOI: 10.1166/Jnn.2016.13196  0.314
2016 Park Y, Cho K, Choi J, Kim S. Fully transparent thermoelectric devices constructed with solution-processable ZnO and ITO nanomaterials Journal of Nanoscience and Nanotechnology. 16: 10563-10565. DOI: 10.1166/Jnn.2016.13195  0.345
2016 Yang K, Cho K, Kim S, Im K. Influence of thermal stress on heat-generating performance of indium tin oxide nanoparticle thin films Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 34. DOI: 10.1116/1.4963832  0.304
2016 Choi JY, Kim S, Hwang BU, Lee NE, Lee SY. Flexible SiInZnO thin film transistor with organic/inorganic hybrid gate dielectric processed at 150 °C Semiconductor Science and Technology. 31: 125007. DOI: 10.1088/0268-1242/31/12/125007  0.38
2016 Park S, Cho K, Oh H, Kim S. Electrical and mechanical characteristics of fully transparent IZO thin-film transistors on stress-relieving bendable substrates Applied Physics Letters. 109. DOI: 10.1063/1.4964133  0.322
2016 Oh H, Cho K, Park S, Kim S. Electrical characteristics of bendable a-IGZO thin-film transistors with split channels and top-gate structure Microelectronic Engineering. 159: 179-183. DOI: 10.1016/J.Mee.2016.03.044  0.384
2016 Yun J, Lee M, Jeon Y, Kim M, Kim Y, Lim D, Kim S. Nanowatt power operation of silicon nanowire NAND logic gates on bendable substrates Nano Research. 1-7. DOI: 10.1007/S12274-016-1235-2  0.348
2016 Jeon Y, Lee M, Kim M, Kim Y, Kim S. Low-power functionality of silicon-nanowire-assembled inverters on bendable plastics Nano Research. 9: 1409-1417. DOI: 10.1007/S12274-016-1036-7  0.316
2016 Kim Y, Jeon Y, Kim M, Kim S. NOR logic function of a bendable combination of tunneling field-effect transistors with silicon nanowire channels Nano Research. 9: 499-506. DOI: 10.1007/S12274-015-0931-7  0.344
2015 Park S, Cho K, Jung J, Kim S. Annealing Effect of Al2O3 Tunnel Barriers in HfO2-Based ReRAM Devices on Nonlinear Resistive Switching Characteristics. Journal of Nanoscience and Nanotechnology. 15: 7569-72. PMID 26726373 DOI: 10.1166/Jnn.2015.11138  0.339
2015 Jeon Y, Kim M, Lim D, Kim S. Steep Subthreshold Swing n- and p-Channel Operation of Bendable Feedback Field-Effect Transistors with p(+)-i-n(+) Nanowires by Dual-Top-Gate Voltage Modulation. Nano Letters. PMID 26218327 DOI: 10.1021/Acs.Nanolett.5B00606  0.333
2015 Oh H, Cho K, Kim S. Effect of deposition pressure on the electrical properties of nitrogen-doped amorphous carbon films Journal of the Korean Physical Society. 67: 638-642. DOI: 10.3938/Jkps.67.638  0.373
2015 Kim M, Jeon Y, Kim Y, Kim S. Impact-Ionization and Tunneling FET Characteristics of Dual-Functional Devices With Partially Covered Intrinsic Regions Ieee Transactions On Nanotechnology. 14: 633-637. DOI: 10.1109/Tnano.2015.2427453  0.322
2015 Park S, Cho K, Kim S. Memory characteristics of flexible resistive switching devices with triangular-shaped silicon nanowire bottom electrodes Semiconductor Science and Technology. 30: 55019. DOI: 10.1088/0268-1242/30/5/055019  0.307
2015 Lee M, Jeon Y, Kim M, Kim S. Flexible semi-around gate silicon nanowire tunnel transistors with a sub- kT/q switch Journal of Applied Physics. 117. DOI: 10.1063/1.4922354  0.399
2015 Choi JY, Kim S, Kim DH, Lee SY. Role of metal capping layer on highly enhanced electrical performance of In-free Si-Zn-Sn-O thin film transistor Thin Solid Films. 594: 293-298. DOI: 10.1016/J.Tsf.2015.04.048  0.363
2015 Kim M, Jeon Y, Kim Y, Kim S. Subthreshold swing characteristics of nanowire tunneling FETs with variation in gate coverage and channel diameter Current Applied Physics. 15: 780-783. DOI: 10.1016/J.Cap.2015.04.024  0.342
2014 Han Y, Cho K, Park S, Kim S. Resistive switching characteristics of HfO2-based memory devices on flexible plastics. Journal of Nanoscience and Nanotechnology. 14: 8191-5. PMID 25958498 DOI: 10.1166/Jnn.2014.9879  0.314
2014 Cho K, Park S, Chung I, Kim S. Effect of oxidizable electrode material on resistive switching characteristics of ZnO(x)S(1-x) films. Journal of Nanoscience and Nanotechnology. 14: 8187-90. PMID 25958497 DOI: 10.1166/Jnn.2014.9881  0.315
2014 Jeon Y, Kim M, Kim Y, Kim S. Switching characteristics of nanowire feedback field-effect transistors with nanocrystal charge spacers on plastic substrates. Acs Nano. 8: 3781-7. PMID 24635681 DOI: 10.1021/Nn500494A  0.37
2014 Song MJ, Kim S, Ki Min N, Jin JH. Electrochemical serotonin monitoring of poly(ethylenedioxythiophene):poly(sodium 4-styrenesulfonate)-modified fluorine-doped tin oxide by predeposition of self-assembled 4-pyridylporphyrin. Biosensors & Bioelectronics. 52: 411-6. PMID 24125701 DOI: 10.1016/J.Bios.2013.08.040  0.308
2014 Choi J, Yun J, Cho K, Kim S. Vertical NOR-logic circuits constructed using nanoparticle films on plastic substrates Japanese Journal of Applied Physics. 53. DOI: 10.7567/Jjap.53.08Ne02  0.342
2014 Han Y, Cho K, Park S, Kim S. The Effects of Mn-doping and Electrode Material on the Resistive Switching Characteristics of ZnO x S 1-x Thin Films on Plastic Transactions On Electrical and Electronic Materials. 15: 24-27. DOI: 10.4313/Teem.2014.15.1.24  0.305
2014 Park S, Cho K, Yang K, Kim S. Electrical characteristics of flexible ZnO thin-film transistors annealed by microwave irradiation Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 32: 62203. DOI: 10.1116/1.4898115  0.381
2014 Kwak K, Cho K, Kim S. Voltage-induced electroluminescence characteristics of hybrid light-emitting diodes with CdSe/Cd/ZnS core-shell nanoparticles embedded in a conducting polymer on plastic substrates Applied Physics Letters. 104: 103303. DOI: 10.1063/1.4868643  0.361
2014 Jeong D, Kim K, Park SI, Kim YH, Kim S, Kim SI. Characteristics of Ga and Ag-doped ZnO-based nanowires for an ethanol gas sensor prepared by hot-walled pulsed laser deposition Research On Chemical Intermediates. 40: 97-103. DOI: 10.1007/S11164-013-1459-7  0.313
2014 Heo K, Cho KS, Lee JH, Jang Y, Kim S, Hwang SW, Whang D. Physics-based modeling and microwave characterization of graphene co-planar waveguides Physica Status Solidi - Rapid Research Letters. 8: 617-620. DOI: 10.1002/Pssr.201409104  0.3
2014 Yang K, Kwak K, Kim S. Influence of the intrinsic length on p+‐i‐n+ Si nanowire avalanche photodetectors on flexible plastic substrates Physica Status Solidi (C). 11: 217-221. DOI: 10.1002/Pssc.201300388  0.367
2014 Kwak K, Cho K, Kim S. Role of ZnO nanoparticle‐layers in enhancement of the performance of organic light‐emitting diodes on plastics Physica Status Solidi (C). 11: 234-237. DOI: 10.1002/Pssc.201300387  0.338
2014 Jeon Y, Kim S. Vertical stacking of ZnO nanowire devices with different functionalities on plastic substrates Physica Status Solidi (a) Applications and Materials Science. 211: 1928-1932. DOI: 10.1002/Pssa.201330555  0.37
2014 Lee M, Jeon Y, Kim S. ZnO nanowire field-effect transistors with Pt nanocrystals fabricated on a flexible plastic substrate for a non-volatile memory application Physica Status Solidi (a). 211: 1912-1916. DOI: 10.1002/Pssa.201330499  0.369
2013 Yeo M, Yun J, Kim S. Electrical and optical characteristics of heterojunction devices composed of silicon nanowires and mercury selenide nanoparticle films on flexible plastics. Journal of Nanoscience and Nanotechnology. 13: 6438-42. PMID 24205678 DOI: 10.1166/Jnn.2013.7614  0.409
2013 Nam I, Kim M, Najam SF, Lee E, Hwang S, Kim S. The effect of trapped charge on silicon nanowire pseudo-MOSFETs. Journal of Nanoscience and Nanotechnology. 13: 6409-12. PMID 24205671 DOI: 10.1166/Jnn.2013.7608  0.341
2013 Lee D, Kang M, Hong S, Hwang D, Heo K, Joo WJ, Kim S, Whang D, Hwang SW. Fabrication and RF characterization of a single nickel silicide nanowire for an interconnect. Journal of Nanoscience and Nanotechnology. 13: 6222-5. PMID 24205633 DOI: 10.1166/Jnn.2013.7704  0.355
2013 Han Y, Chung I, Park S, Cho K, Kim S. Influences of electrode materials on the resistive memory switching properties of ZnOxS1-x:Mn thin films. Journal of Nanoscience and Nanotechnology. 13: 6208-11. PMID 24205630 DOI: 10.1166/Jnn.2013.7686  0.3
2013 Kim S, Cho K, Kwak K, Kim S. Memory characteristics of doubly stacked nano-floating gate memory devices with channels of single ZnO nanowires. Journal of Nanoscience and Nanotechnology. 13: 6196-8. PMID 24205627 DOI: 10.1166/Jnn.2013.7692  0.369
2013 Choi J, Cho K, Kim S. Length-dependent thermoelectric characteristics of silicon nanowires on plastics in a relatively low temperature regime in ambient air. Nanotechnology. 24: 455402. PMID 24141226 DOI: 10.1088/0957-4484/24/45/455402  0.318
2013 Kwak K, Cho K, Kim S. Stable bending performance of flexible organic light-emitting diodes using IZO anodes. Scientific Reports. 3: 2787. PMID 24071803 DOI: 10.1038/Srep02787  0.353
2013 Jang J, Cho K, Yun J, Kim S. Nanocrystal-based complementary inverters constructed on flexible plastic substrates. Journal of Nanoscience and Nanotechnology. 13: 3597-601. PMID 23858910 DOI: 10.1166/Jnn.2013.7324  0.386
2013 Park S, Cho K, Kim S. Photocurrent characteristics of HgTe nanoparticle films-Si nanowires heterojunctions made using a simple transfer-dropping method. Journal of Nanoscience and Nanotechnology. 13: 3539-41. PMID 23858897 DOI: 10.1166/Jnn.2013.7255  0.394
2013 Kang J, Moon T, Jeon Y, Kim H, Kim S. Vertically integrated logic circuits constructed using ZnO-nanowire-based field-effect transistors on plastic substrates. Journal of Nanoscience and Nanotechnology. 13: 3526-8. PMID 23858894 DOI: 10.1166/Jnn.2013.7230  0.377
2013 Im K, Chol K, Kwak K, Kim J, Kim S. Flexible transparent heaters with heating films made of indium tin oxide nanoparticles. Journal of Nanoscience and Nanotechnology. 13: 3519-21. PMID 23858892 DOI: 10.1166/Jnn.2013.7322  0.35
2013 Kwak K, Cho K, Kim S. Characterization of planar pn heterojunction diodes constructed with Cu2O nanoparticle films and single ZnO nanowires. Journal of Nanoscience and Nanotechnology. 13: 3433-6. PMID 23858873 DOI: 10.1166/Jnn.2013.7237  0.386
2013 Jeon Y, Kang J, Lee M, Moon T, Kim S. Si-nanowire-array-based NOT-logic circuits constructed on plastic substrates using top-down methods. Journal of Nanoscience and Nanotechnology. 13: 3350-3. PMID 23858857 DOI: 10.1166/Jnn.2013.7229  0.35
2013 Najam F, Kim S, Yu YS. Gate all around metal oxide field transistor: Surface potential calculation method including doping and interface trap charge and the effect of interface trap charge on subthreshold slope Journal of Semiconductor Technology and Science. 13: 530-537. DOI: 10.5573/Jsts.2013.13.5.530  0.307
2013 Yun J, Cho K, Kim S. Nanoparticle-based flexible inverters with a vertical structure Thin Solid Films. 539: 256-259. DOI: 10.1016/J.Tsf.2013.04.147  0.34
2013 Choi J, Cho K, Kim S. Thermoelectric characteristics of Si nanowires transferred onto plastics in air Microelectronic Engineering. 111: 126-129. DOI: 10.1016/J.Mee.2013.02.073  0.358
2013 Cho MY, Cho K, Kim S. Luminescence shift of electrospun ZnO/MEH-PPV/PEO composite nanofibers Journal of Luminescence. 134: 79-82. DOI: 10.1016/J.Jlumin.2012.09.009  0.317
2012 Han Y, Cho K, Kim S. Resistive switching characteristics of Cu/ZnO0.4S0.6/Al devices constructed on plastic substrates. Journal of Nanoscience and Nanotechnology. 12: 5732-4. PMID 22966644 DOI: 10.1166/Jnn.2012.6230  0.315
2012 Kwak K, Cho K, Kim S. Photocurrent characteristics of solution-processed mercury sulfide nanoparticles--thin films on plastic substrates. Journal of Nanoscience and Nanotechnology. 12: 5728-31. PMID 22966643 DOI: 10.1166/Jnn.2012.6229  0.368
2012 Choi W, Cho MY, Konar A, Lee JH, Cha GB, Hong SC, Kim S, Kim J, Jena D, Joo J, Kim S. High-detectivity multilayer MoS(2) phototransistors with spectral response from ultraviolet to infrared. Advanced Materials (Deerfield Beach, Fla.). 24: 5832-6. PMID 22903762 DOI: 10.1002/Adma.201201909  0.334
2012 Kim K, Lee DY, Park DH, Kim S, Lee SY. Synthesis and structural-optical properties of Ga-doped ZnO nanowires by hot-walled pulsed laser deposition method. Journal of Nanoscience and Nanotechnology. 12: 4173-6. PMID 22852366 DOI: 10.1166/Jnn.2012.5935  0.36
2012 Kim K, Park DH, Debnath PC, Lee DY, Kim S, Jang GE, Lee SY. Characterizations of Ga-doped ZnO nanowires depending on growth temperature and target-substrate distance in hot-walled pulsed laser deposition. Journal of Nanoscience and Nanotechnology. 12: 3559-62. PMID 22849168 DOI: 10.1166/Jnn.2012.5586  0.339
2012 Yoon C, Jeon Y, Yun J, Kim S. Fabrication of arrayed Si nanowire-based nano-floating gate memory devices on flexible plastics. Journal of Nanoscience and Nanotechnology. 12: 578-84. PMID 22524023 DOI: 10.1166/Jnn.2012.5395  0.38
2012 Kim S, Cho K, Kwak K, Kim S. Memory Characteristics of Pt Nanoparticle-embedded MOS Capacitors Fabricated at Room Temperature Transactions On Electrical and Electronic Materials. 13: 162-164. DOI: 10.4313/Teem.2012.13.3.162  0.323
2012 Lee M, Moon T, Kim S. Floating Body Effect in Partially Depleted Silicon Nanowire Transistors and Potential Capacitor-Less One-Transistor DRAM Applications Ieee Transactions On Nanotechnology. 11: 355-359. DOI: 10.1109/Tnano.2011.2175942  0.338
2012 Moon T, Jung J, Han Y, Jeon Y, Koo S, Kim S. Flexible Logic Gates Composed of Si-Nanowire-Based Memristive Switches Ieee Transactions On Electron Devices. 59: 3288-3291. DOI: 10.1109/Ted.2012.2220778  0.339
2012 Jeon Y, Lee M, Moon T, Kim S. Flexible Nano-Floating-Gate Memory With Channels of Enhancement-Mode Si Nanowires Ieee Transactions On Electron Devices. 59: 2939-2942. DOI: 10.1109/Ted.2012.2211879  0.369
2012 Lee M, Jeon Y, Jung J, Koo S, Kim S. Multiple silicon nanowire complementary tunnel transistors for ultralow-power flexible logic applications Applied Physics Letters. 100: 253506. DOI: 10.1063/1.4729930  0.369
2012 Choi JY, Kim S, Lee SY. Threshold voltage shift by controlling Ga in solution processed Si–In–Zn–O thin film transistors Thin Solid Films. 520: 3774-3777. DOI: 10.1016/J.Tsf.2011.10.212  0.342
2012 Yang SH, Cho MY, Jo SG, Jung JS, Jung KH, Bae SY, Choi DH, Kim S, Joo J. Photoresponsive ambipolar transport characteristics of organic thin film transistors using soluble HB-ant-THT and PCBM composites Synthetic Metals. 162: 332-336. DOI: 10.1016/J.Synthmet.2011.12.014  0.344
2012 Chung I, Cho K, Yun J, Kim S. Flexible resistive switching memory devices composed of solution-processed GeO2: S films Microelectronic Engineering. 97: 122-125. DOI: 10.1016/J.Mee.2012.05.032  0.309
2012 Lee DH, Kim K, Chun YS, Kim S, Lee SY. Substitution mechanism of Ga for Zn site depending on deposition temperature for transparent conducting oxides Current Applied Physics. 12: 1586-1590. DOI: 10.1016/J.Cap.2012.05.009  0.355
2012 Kim K, Kim S, Lee SY. Effect of excimer laser annealing on the properties of ZnO thin film prepared by sol-gel method Current Applied Physics. 12: 585-588. DOI: 10.1016/J.Cap.2011.09.006  0.344
2012 Lee M, Jeon Y, Son KS, Shim JH, Kim S. Comparative performance analysis of silicon nanowire tunnel FETs and MOSFETs on plastic substrates in flexible logic circuit applications Physica Status Solidi (a). 209: 1350-1358. DOI: 10.1002/Pssa.201127767  0.388
2011 Park B, Cho K, Kim S, Kim S. Nano-Floating Gate Memory Devices Composed of ZnO Thin-Film Transistors on Flexible Plastics. Nanoscale Research Letters. 6: 41. PMID 27502663 DOI: 10.1007/S11671-010-9789-5  0.369
2011 Yun J, Cho K, Kim S. Reduction of hysteresis in HgSe nanoparticle-based thin-film transistors using blocking oxide layers on plastics. Journal of Nanoscience and Nanotechnology. 11: 6114-7. PMID 22121668 DOI: 10.1166/Jnn.2011.4473  0.37
2011 Kim K, Moon T, Kim S. Investigation on light emission in light-emitting diodes constructed with n-ZnO and p-Si nanowires. Journal of Nanoscience and Nanotechnology. 11: 6025-8. PMID 22121651 DOI: 10.1166/Jnn.2011.4345  0.376
2011 Yoon C, Moon T, Lee M, Cho G, Kim S. Flexible logic gates composed of high performance GaAs-nanowire-based MESFETs with MHz-dynamic operations. Nanotechnology. 22: 465202. PMID 22032860 DOI: 10.1088/0957-4484/22/46/465202  0.354
2011 Kim K, Debnath PC, Lee DH, Kim S, Lee SY. Effects of silver impurity on the structural, electrical, and optical properties of ZnO nanowires. Nanoscale Research Letters. 6: 552. PMID 21985620 DOI: 10.1186/1556-276X-6-552  0.363
2011 Kwak K, Cho K, Kim S. Flexible photodiodes constructed with CdTe nanoparticle thin films and single ZnO nanowires on plastics. Nanotechnology. 22: 415204. PMID 21914936 DOI: 10.1088/0957-4484/22/41/415204  0.39
2011 Moon T, Kang J, Han Y, Kim C, Jeon Y, Kim H, Kim S. Si-based flexible memristive systems constructed using top-down methods. Acs Applied Materials & Interfaces. 3: 3957-61. PMID 21899257 DOI: 10.1021/Am2008344  0.337
2011 Kim K, Moon T, Kim J, Kim S. Electrically driven lasing in light-emitting devices composed of n-ZnO and p-Si nanowires. Nanotechnology. 22: 245203. PMID 21508495 DOI: 10.1088/0957-4484/22/24/245203  0.386
2011 Kim TG, Hwang J, Kang J, Kim S, Hwang S. Fabrication of nanometer-scale carbon nanotube field-effect transistors on flexible and transparent substrate. Journal of Nanoscience and Nanotechnology. 11: 1393-6. PMID 21456196 DOI: 10.1166/Jnn.2011.3386  0.336
2011 Lee M, Jeon Y, Moon T, Kim S. Top-down fabrication of fully CMOS-compatible silicon nanowire arrays and their integration into CMOS Inverters on plastic. Acs Nano. 5: 2629-36. PMID 21355599 DOI: 10.1021/Nn102594D  0.377
2011 Kim K, Lee M, Yun J, Kim S. A p-n Heterojunction Diode Constructed with A p-Si Nanowire and An n-ZnO Nanoparticle Thin-Film by Dielectrophoresis The Transactions of the Korean Institute of Electrical Engineers. 60: 105-108. DOI: 10.5370/Kiee.2011.60.1.105  0.375
2011 Lee DH, Chun YS, Lee SY, Kim S. Evaluation of Acceptor Binding Energy of Nitrogen-Doped Zinc Oxide Thin Films Grown by Dielectric Barrier Discharge in Pulsed Laser Deposition Transactions On Electrical and Electronic Materials. 12: 200-203. DOI: 10.4313/Teem.2011.12.5.200  0.368
2011 Han Y, Cho K, Yun J, Kim S. Resistive Switching Characteristics of Hafnium Oxide Thin Films Sputtered at Room Temperature Journal of the Korean Institute of Electrical and Electronic Material Engineers. 24: 710-712. DOI: 10.4313/Jkem.2011.24.9.710  0.313
2011 Choi J, Park K, Kim S, Lee S. Electrical Properties of Mg Doped ZnSnO TFTs Fabricated by Solution-process Journal of the Korean Institute of Electrical and Electronic Material Engineers. 24: 697-700. DOI: 10.4313/Jkem.2011.24.9.697  0.326
2011 Jung D, Kim K, Lee D, Debnath PC, Kim S, Lee S. Sensing Characteristics of ZnO-based Ethanol Gas Sensor on Ga-doped Nanowires by Hot Walled Pulsed Laser Deposition Journal of the Korean Institute of Electrical and Electronic Material Engineers. 24: 594-598. DOI: 10.4313/Jkem.2011.24.7.594  0.307
2011 Kim S, Cho K, Kim S. Characteristics of NFGM Devices Constructed with a Single ZnO Nanowire and Al Nanoparticles Journal of the Korean Institute of Electrical and Electronic Material Engineers. 24: 325-327. DOI: 10.4313/Jkem.2011.24.4.325  0.351
2011 Koo J, Jeon Y, Lee M, Kim S. Strain-Dependent Characteristics of Triangular Silicon Nanowire-Based Field-Effect Transistors on Flexible Plastics Japanese Journal of Applied Physics. 50: 65001. DOI: 10.1143/Jjap.50.065001  0.347
2011 Yoon C, Cho G, Kim S. Electrical Characteristics of GaAs Nanowire-Based MESFETs on Flexible Plastics Ieee Transactions On Electron Devices. 58: 1096-1101. DOI: 10.1109/Ted.2011.2107518  0.364
2011 Chung E, Kim Y, Park M, Nam K, Lee S, Min J, Yang G, Shin Y, Choi S, Jin G, Moon J, Kim S. Spatial Distribution of Interface Traps in Sub-50-nm Recess-Channel-Type DRAM Cell Transistors Ieee Electron Device Letters. 32: 81-83. DOI: 10.1109/Led.2010.2085416  0.322
2011 Kim K, Debnath PC, Kim S, Lee SY. Temperature stress on pristine ZnO nanowire field effect transistor Applied Physics Letters. 98: 113109. DOI: 10.1063/1.3567795  0.373
2011 Lee DH, Park KH, Kim S, Lee SY. Effect of Ag doping on the performance of ZnO thin film transistor Thin Solid Films. 520: 1160-1164. DOI: 10.1016/J.Tsf.2011.04.064  0.397
2011 Lee DH, Park DH, Kim S, Lee SY. Half wave rectification of inorganic/organic heterojunction diode at the frequency of 1 kHz Thin Solid Films. 519: 5658-5661. DOI: 10.1016/J.Tsf.2011.03.021  0.38
2011 Lee DH, Kim S, Lee SY. Zinc cadmium oxide thin film transistors fabricated at room temperature Thin Solid Films. 519: 4361-4365. DOI: 10.1016/J.Tsf.2011.02.079  0.398
2011 Chung EA, Kim YP, Nam KJ, Lee S, Min JY, Shin YG, Choi S, Jin G, Moon JT, Kim S. Leakage current mechanisms in sub-50 nm recess-channel-type DRAM cell transistors with three-terminal gate-controlled diodes Solid-State Electronics. 56: 219-222. DOI: 10.1016/J.Sse.2010.10.004  0.315
2011 Kim S, Cho K, Kim S. Characterization of dual floating gate memory devices constructed on glass Solid State Communications. 151: 151-154. DOI: 10.1016/J.Ssc.2010.10.044  0.331
2011 Kim K, Moon T, Lee M, Kang J, Jeon Y, Kim S. Light-emitting diodes composed of n-ZnO and p-Si nanowires constructed on plastic substrates by dielectrophoresis Solid State Sciences. 13: 1735-1739. DOI: 10.1016/J.Solidstatesciences.2011.06.028  0.401
2011 Chung EA, Nam KJ, Kim YP, Min JY, Cho M, Hong H, Han J, Lee JD, Shin YG, Choi S, Kim S. Investigation of spatial and energetic trap distributions in 1 nm EOT SiO2/HfO2 by discharging-sweep mode amplitude charge pumping Solid State Sciences. 13: 1360-1363. DOI: 10.1016/J.Solidstatesciences.2011.03.010  0.356
2011 Han Y, Cho K, Kim S. Characteristics of multilevel bipolar resistive switching in Au/ZnO/ITO devices on glass Microelectronic Engineering. 88: 2608-2610. DOI: 10.1016/J.Mee.2011.02.058  0.324
2011 Kang MG, Cho KH, Oh SM, Do YH, Kang CY, Kim S, Yoon SJ. Low-temperature crystallization and electrical properties of BST thin films using excimer laser annealing Current Applied Physics. 11. DOI: 10.1016/J.Cap.2010.12.029  0.336
2010 Kwak K, Cho K, Kim S. Characterization of a photodiode coupled with a Si nanowire-FET on a plastic substrate Sensors (Basel, Switzerland). 10: 9118-9126. PMID 22163398 DOI: 10.3390/S101009118  0.402
2010 Park B, Cho K, Kim S, Kim S. Transparent nano-floating gate memory on glass. Nanotechnology. 21: 335201. PMID 20657037 DOI: 10.1088/0957-4484/21/33/335201  0.364
2010 Yun J, Cho K, Kim S. Flexible logic circuits composed of chalcogenide-nanocrystal-based thin film transistors. Nanotechnology. 21: 235204. PMID 20472946 DOI: 10.1088/0957-4484/21/23/235204  0.34
2010 Kang J, Lee M, Koo SM, Hong WS, Kim S. Single ZnO nanowire inverter logic circuits on flexible plastic substrates The Transactions of the Korean Institute of Electrical Engineers. 59: 359-362. DOI: 10.5370/Kiee.2010.59.2.359  0.332
2010 Kwak K, Cho K, Kim S. Optoelectronic Characteristics of Transparent Cu 2 O Films Spin-coated on Glass Substrates The Transactions of the Korean Institute of Electrical Engineers. 59: 123-126. DOI: 10.5370/Kiee.2010.59.1.123  0.366
2010 Lee DH, Kim S, Lee SY. Process optimization approached by design of experiment method for Ga-doped ZnO thin films The Transactions of the Korean Institute of Electrical Engineers. 59: 108-112. DOI: 10.5370/Kiee.2010.59.1.108  0.327
2010 Kim K, Kang J, Lee M, Yoon C, Cho K, Kim S. Ultraviolet Electroluminescence Emission from n-Type ZnO/p-Type Si Crossed Nanowire Light-Emitting Diodes Japanese Journal of Applied Physics. 49. DOI: 10.1143/Jjap.49.06Gg05  0.384
2010 Jang J, Cho K, Byun K, Hong WS, Kim S. Optoelectronic characteristics of HgSe nanoparticle films spin-coated on flexible plastic substrates Japanese Journal of Applied Physics. 49. DOI: 10.1143/Jjap.49.030210  0.345
2010 Koo J, Lee M, Kang J, Yoon C, Kim K, Jeon Y, Kim S. Type conversion of n-type silicon nanowires to p-type by diffusion of gold ions Semiconductor Science and Technology. 25: 45010. DOI: 10.1088/0268-1242/25/4/045010  0.3
2010 Cho MY, Kim K, Kim SJ, Jo SG, Kim KH, Jung KH, Choi DH, Kim S, Joo J. Gate-field dependent photosensitivity of soluble 1,2,4,5-tetra(5′-hexyl-[2,2′]terthiophenyl-5-vinyl)-benzene based organic thin film transistors Journal of Applied Physics. 108: 23703. DOI: 10.1063/1.3456498  0.345
2010 Jo Y, Seo S, Bahng W, Kim S, Kim N, Kim S, Koo S. Improved local oxidation of silicon carbide using atomic force microscopy Applied Physics Letters. 96: 082105. DOI: 10.1063/1.3327832  0.314
2010 Kim K, Debnath PC, Park DH, Kim S, Lee SY. Controllability of threshold voltage in Ag-doped ZnO nanowire field effect transistors by adjusting the diameter of active channel nanowire Applied Physics Letters. 96: 83103. DOI: 10.1063/1.3327826  0.39
2010 Im K, Cho K, Kim J, Kim S. Transparent heaters based on solution-processed indium tin oxide nanoparticles Thin Solid Films. 518: 3960-3963. DOI: 10.1016/J.Tsf.2009.10.164  0.339
2010 Park B, Cho K, Kim S, Kim S. Nano-floating gate memory based on ZnO thin-film transistors and Al nanoparticles Solid State Sciences. 12: 1966-1969. DOI: 10.1016/J.Solidstatesciences.2010.08.008  0.401
2010 Yoon C, Cho K, Lee JH, Whang D, Moon BM, Kim S. P-type silicon nanowire-based nano-floating gate memory with Au nanoparticles embedded in Al2O3 gate layers Solid State Sciences. 12: 745-749. DOI: 10.1016/J.Solidstatesciences.2010.02.026  0.384
2010 Byun K, Cho K, Kim S. Sintering effect on the optoelectronic characteristics of HgSe nanoparticle films on plastic substrates Materials Chemistry and Physics. 122: 246-249. DOI: 10.1016/J.Matchemphys.2010.02.043  0.357
2010 Choi SY, Yang MK, Kim S, Lee JK. Fully room‐temperature‐fabricated TiN/TaOx/Pt nonvolatile memory devices Physica Status Solidi-Rapid Research Letters. 4: 359-361. DOI: 10.1002/Pssr.201004388  0.324
2009 Keem K, Kang J, Yoon C, Yeom D, Jeong DY, Park B, Park J, Kim S. ZnO nanowire-based nonvolatile memory devices with Al2O3 layers as storage nodes. Journal of Nanoscience and Nanotechnology. 9: 4240-3. PMID 19916437 DOI: 10.1166/Jnn.2009.M39  0.383
2009 Jun JH, Park B, Cho K, Kim S. Flexible TFTs based on solution-processed ZnO nanoparticles. Nanotechnology. 20: 505201. PMID 19907070 DOI: 10.1088/0957-4484/20/50/505201  0.385
2009 Lee M, Koo J, Chung EA, Jeong DY, Koo YS, Kim S. Silicon nanowire-based tunneling field-effect transistors on flexible plastic substrates. Nanotechnology. 20: 455201. PMID 19822935 DOI: 10.1088/0957-4484/20/45/455201  0.373
2009 Seong H, Yun J, Jun JH, Cho K, Kim S. The transfer of charge carriers photogenerated in ZnO nanoparticles into a single ZnO nanowire. Nanotechnology. 20: 245201. PMID 19468167 DOI: 10.1088/0957-4484/20/24/245201  0.309
2009 Yeom D, Kang J, Yoon C, Park B, Jeong DY, Koh EK, Kim S. ZnO nanowire field-effect transistors with floating gate nodes of Au nanoparticles. Journal of Nanoscience and Nanotechnology. 9: 3256-60. PMID 19453000 DOI: 10.1166/Jnn.2009.020  0.396
2009 Park B, Cho K, Yun J, Koo YS, Lee JH, Kim S. Electrical characteristics of floating-gate memory devices with titanium nanoparticles embedded in gate oxides. Journal of Nanoscience and Nanotechnology. 9: 1904-8. PMID 19435057 DOI: 10.1166/Jnn.2009.438  0.383
2009 Chung EA, Koo J, Lee M, Jeong DY, Kim S. Enhancement-mode silicon nanowire field-effect transistors on plastic substrates. Small (Weinheim An Der Bergstrasse, Germany). 5: 1821-4. PMID 19408257 DOI: 10.1002/Smll.200900302  0.324
2009 Lee D, Leem J, Kim S, Lee S. Investigation on the Micro-photoluminescence of ZnO Thin Films Grown by Pulsed Laser Deposition Journal of the Korean Institute of Electrical and Electronic Material Engineers. 22: 756-759. DOI: 10.4313/Jkem.2009.22.9.756  0.352
2009 Kwak K, Cho K, Yun J, Kim S. Electrical Characteristics of Cu 2 O-PVP Nanofibers Fabricated by Electrospinning Journal of the Korean Institute of Electrical and Electronic Material Engineers. 22: 650-653. DOI: 10.4313/Jkem.2009.22.8.650  0.314
2009 Kim K, Song YW, Leem J, Lee SY, Kim S. Preparation and analysis of schottky diodes with Au and sol-gel-processed ZnO thin films Journal of the Korean Physical Society. 55: 140-143. DOI: 10.3938/Jkps.55.140  0.381
2009 Jeong D, Keem K, Park B, Cho K, Kim S. Electrical Characteristics of Hybrid Nanoparticle–Nanowire Devices Ieee Transactions On Nanotechnology. 8: 650-653. DOI: 10.1109/Tnano.2009.2021995  0.374
2009 Yoon CJ, Yeom DH, Jeong DY, Lee MG, Moon BM, Kim SS, Choi CY, Koo SM. Nanocrystal-mediated charge screening effects in nanowire field-effect transistors Journal of Applied Physics. 105: 064503. DOI: 10.1063/1.3093692  0.392
2009 Seong H, Cho K, Kim S. A pn heterojunction diode constructed with a n-type ZnO nanowire and a p-type HgTe nanoparticle thin film Applied Physics Letters. 94: 43102. DOI: 10.1063/1.3067861  0.391
2009 Yun J, Cho K, Park B, Park BH, Kim S. Resistance switching memory devices constructed on plastic with solution-processed titanium oxide Journal of Materials Chemistry. 19: 2082-2085. DOI: 10.1039/B817062B  0.304
2009 Kim K, Song YW, Chang S, Kim IH, Kim S, Lee SY. Fabrication and characterization of Ga-doped ZnO nanowire gas sensor for the detection of CO Thin Solid Films. 518: 1190-1193. DOI: 10.1016/J.Tsf.2009.03.229  0.307
2009 Koo J, Kim S. Charge transport modulation of silicon nanowire by O2 plasma Solid State Sciences. 11: 1870-1874. DOI: 10.1016/J.Solidstatesciences.2009.08.004  0.329
2009 Jang J, Cho K, Yun J, Kim S. N-channel thin-film transistors constructed on plastic by solution processes of HgSe nanocrystals Microelectronic Engineering. 86: 2030-2033. DOI: 10.1016/J.Mee.2009.01.027  0.372
2009 Jun JH, Seong H, Cho K, Moon BM, Kim S. Ultraviolet photodetectors based on ZnO nanoparticles Ceramics International. 35: 2797-2801. DOI: 10.1016/J.Ceramint.2009.03.032  0.349
2009 Park B, Cho K, Koo YS, Kim S. Memory characteristics of platinum nanoparticle-embedded MOS capacitors Current Applied Physics. 9: 1334-1337. DOI: 10.1016/J.Cap.2009.02.013  0.365
2008 Yeom D, Kang J, Lee M, Jang J, Yun J, Jeong DY, Yoon C, Koo J, Kim S. ZnO nanowire-based nano-floating gate memory with Pt nanocrystals embedded in Al(2)O(3) gate oxides. Nanotechnology. 19: 395204. PMID 21832589 DOI: 10.1088/0957-4484/19/39/395204  0.364
2008 Yeom D, Keem K, Kang J, Jeong DY, Yoon C, Kim D, Kim S. NOT and NAND logic circuits composed of top-gate ZnO nanowire field-effect transistors with high-k Al(2)O(3) gate layers. Nanotechnology. 19: 265202. PMID 21828674 DOI: 10.1088/0957-4484/19/26/265202  0.366
2008 Jang J, Cho K, Lee SH, Kim S. Transparent and flexible thin-film transistors with channel layers composed of sintered HgTe nanocrystals. Nanotechnology. 19: 015204. PMID 21730526 DOI: 10.1088/0957-4484/19/01/015204  0.396
2008 Park B, Lee H, Cho K, Kim S. Capacitance-voltage Characteristics of MOS Capacitors with Ge Nanocrystals Embedded in HfO 2 Gate Material Journal of the Korean Institute of Electrical and Electronic Material Engineers. 21: 699-705. DOI: 10.4313/Jkem.2008.21.8.699  0.36
2008 Seong H, Yeom D, Kim H, Cho K, Kim S. Photoluminescence of Neutron-irradiated GaN Films and Nanowires Journal of the Korean Institute of Electrical and Electronic Material Engineers. 21: 603-609. DOI: 10.4313/Jkem.2008.21.7.603  0.368
2008 Choi C, Cho W, Koo S, Kim S, Li Q, Suehle JS, Richter CA, Vogel EM. Three-Dimensional Simulation Study of the Improved On/Off Current Ratio in Silicon Nanowire Field-Effect Transistors Journal of the Korean Physical Society. 53: 1680-1684. DOI: 10.3938/Jkps.53.1680  0.31
2008 Seong H, Cho K, Kim S. Photocurrent characteristics of solution-processed HgTe nanoparticle thin films under the illumination of 1.3 µm wavelength light Semiconductor Science and Technology. 23: 75011. DOI: 10.1088/0268-1242/23/7/075011  0.346
2008 Kim DW, Jang J, Kim H, Cho K, Kim S. Electrical characteristics of HgTe nanocrystal-based thin film transistors fabricated on flexible plastic substrates Thin Solid Films. 516: 7715-7719. DOI: 10.1016/J.Tsf.2008.04.044  0.383
2008 Yoon C, Kang J, Yeom D, Jeong DY, Kim S. Comparison of electrical characteristics of back-and top-gate Si nanowire field-effect transistors Solid State Communications. 148: 293-296. DOI: 10.1016/J.Ssc.2008.09.011  0.384
2008 Park B, Im KJ, Cho K, Kim S. Electrical characteristics of gold nanoparticle-embedded MIS capacitors with parylene gate dielectric Organic Electronics. 9: 878-882. DOI: 10.1016/J.Orgel.2008.06.010  0.327
2008 Jun JH, Cho K, Yun J, Suh KS, Kim TY, Kim S. Enhancement of electrical characteristics of electrospun polyaniline nanofibers by embedding the nanofibers with Ga-doped ZnO nanoparticles Organic Electronics. 9: 445-451. DOI: 10.1016/J.Orgel.2008.02.001  0.308
2008 Jang J, Cho K, Lee SH, Kim S. Synthesis and electrical characteristics of Ag2S nanocrystals Materials Letters. 62: 1438-1440. DOI: 10.1016/J.Matlet.2007.08.080  0.37
2008 Park B, Cho K, Kim S. Electrical characteristics of polycrystalline Si layers embedded into high-k Al2O3 gate layers Applied Surface Science. 254: 7905-7908. DOI: 10.1016/J.Apsusc.2008.03.064  0.366
2008 Kang J, Keem K, Jeong DY, Park M, Whang D, Kim S. Electrical characteristics of Si-nanoparticle/Si-nanowire-based field-effect transistors Journal of Materials Science. 43: 3424-3428. DOI: 10.1007/S10853-007-2310-6  0.375
2007 Keem K, Kang J, Yoon C, Jeong DY, Moon B, Kim S. Enhanced Performance of ZnO Nanowire Field Effect Transistors by H2 Annealing Japanese Journal of Applied Physics. 46: 6230-6232. DOI: 10.1143/Jjap.46.6230  0.38
2007 Kang J, Keem K, Jeong DY, Kim S. Electrical characteristics of ZnO nanowire-based field-effect transistors on flexible plastic substrates Japanese Journal of Applied Physics. 46: 6227-6229. DOI: 10.1143/Jjap.46.6227  0.395
2007 Keem K, Kang J, Jeong D, Min B, Cho K, Kim H, Kim S, Kim YK. Aging Effect on the Optoelectronic Properties of a Single ZnO Nanowire Japanese Journal of Applied Physics. 46: 4355-4358. DOI: 10.1143/Jjap.46.4355  0.332
2007 Kim H, Kim D, Cho K, Kim S. HgTe Nanocrystal-Based Thin-Film Transistors Fabricated on Glass Substrates Ieee Electron Device Letters. 28: 42-44. DOI: 10.1109/Led.2006.888191  0.39
2007 Lee HR, Choi S, Cho K, Kim S. Capacitance–voltage characteristics of MOS capacitors with Ge nanocrystals embedded in ZrO2 gate material Thin Solid Films. 516: 412-416. DOI: 10.1016/J.Tsf.2007.07.008  0.381
2007 Park B, Choi S, Lee HR, Cho K, Kim S. Memory characteristics of MOS capacitors with Ge nanocrystal-embedded Al2O3 gate layers Solid State Communications. 143: 550-552. DOI: 10.1016/J.Ssc.2007.06.034  0.378
2007 Kim D, Cho K, Kim H, Moon B, Kim S. Fabrication of thin-film transistors based on CdTe/CdHgTe core-shell nanocrystals Microelectronic Engineering. 84: 1643-1646. DOI: 10.1016/J.Mee.2007.01.260  0.356
2007 Keem K, Kang J, Yoon C, Yeom D, Jeong D, Moon B, Kim S. A fabrication technique for top-gate ZnO nanowire field-effect transistors by a photolithography process Microelectronic Engineering. 84: 1622-1626. DOI: 10.1016/J.Mee.2007.01.258  0.397
2007 Park B, Cho K, Moon B, Kim S. Memory characteristics of Al nanocrystals embedded in Al2O3 layers Microelectronic Engineering. 84: 1627-1630. DOI: 10.1016/J.Mee.2007.01.203  0.363
2006 Keem K, Jeong DY, Kim S, Lee MS, Yeo IS, Chung UI, Moon JT. Fabrication and device characterization of omega-shaped-gate ZnO nanowire field-effect transistors. Nano Letters. 6: 1454-8. PMID 16834428 DOI: 10.1021/Nl060708X  0.401
2006 Kim H, Cho K, Kim S. Optoelectronic properties of various HgTe nanoparticle-based structures in the visible and infrared wavelength range International Journal of Nanotechnology. 3: 298-313. DOI: 10.1504/Ijnt.2006.009585  0.323
2006 Kim H, Cho K, Kim DW, Moon BM, Sung MY, Kim S. Temperature-dependent gate effect of sintered HgTe nanoparticles Japanese Journal of Applied Physics. 45: 7213-7216. DOI: 10.1143/Jjap.45.7213  0.351
2006 Min B, Lee JS, Keem K, Kim H, Jeong DY, Cho K, Kim S. Synthesis of Single Crystalline In2O3 Nanowires and Their Photoluminescence Characteristics Japanese Journal of Applied Physics. 45: 4988-4990. DOI: 10.1143/Jjap.45.4988  0.351
2006 Kim K, Keem K, Jeong D, Min B, Cho K, Kim H, Moon B, Noh T, Park J, Suh M, Kim S. Photocurrent of Undoped, n- and p-Type Si Nanowires Synthesized by Thermal Chemical Vapor Deposition Japanese Journal of Applied Physics. 45: 4265-4269. DOI: 10.1143/Jjap.45.4265  0.358
2006 Kim J, Kim H, Cho K, Jeong D, Kim S. Photocurrent Characteristics of CdTe Nanoparticles Japanese Journal of Applied Physics. 45: 1033-1039. DOI: 10.1143/Jjap.45.1033  0.337
2006 Park B, Cho K, Kim H, Kim S. Capacitance characteristics of MOS capacitors embedded with colloidally synthesized gold nanoparticles Semiconductor Science and Technology. 21: 975-978. DOI: 10.1088/0268-1242/21/7/025  0.34
2006 Choi S, Park B, Kim H, Cho K, Kim S. Capacitance-voltage characterization of Ge-nanocrystal-embedded MOS capacitors with a capping Al2O3 layer Semiconductor Science and Technology. 21: 378-381. DOI: 10.1088/0268-1242/21/3/029  0.366
2006 Kim H, Cho K, Kim DW, Lee HR, Kim S. Bottom- and top-gate field-effect thin-film transistors with p channels of sintered HgTe nanocrystals Applied Physics Letters. 89: 173107. DOI: 10.1063/1.2364153  0.398
2006 Kim DW, Cho K, Kim H, Park B, Sung MY, Kim S. Optoelectronic characteristics of CdTe/HgTe/CdTe quantum-dot quantum-well nanoparticles Solid State Communications. 140: 215-218. DOI: 10.1016/J.Ssc.2006.08.023  0.307
2006 Kim H, Cho K, Park B, Kim JH, Lee JW, Kim S, Noh T, Jang E. Optoelectronic characteristics of close-packed HgTe nanoparticles in the infrared range Solid State Communications. 137: 315-319. DOI: 10.1016/J.Ssc.2005.11.037  0.339
2005 Kim K, Keem K, Kang J, Yoon C, Jeong D, Min B, Cho K, Kim S, Suh M. Photocurrent of Single Silicon Nanowire synthesized by Thermal Chemical Vapor Deposition The Japan Society of Applied Physics. 2005: 1014-1015. DOI: 10.7567/Ssdm.2005.G-9-3  0.327
2005 Kim K, Keem K, Kang J, Yoon C, Jeong D, Min B, Cho K, Kim H, Kim S. Synthesis and Optoelectronic Characteristics of Single-crystalline Si Nanowires Transactions On Electrical and Electronic Materials. 6: 198-201. DOI: 10.4313/Teem.2005.6.5.198  0.357
2005 Lee J, Cho K, Kim H, Park B, Kim S, Kim S. Improvement of Hybrid EL Efficiency in Nanoparticle EL Devices by Insertion of the Layers of PVK and BaF 2 Transactions On Electrical and Electronic Materials. 6: 101-105. DOI: 10.4313/Teem.2005.6.3.101  0.353
2005 Lee JW, Cho K, Kim H, Kim JH, Park B, Noh T, Kim S, Kim SH. Photoluminescence Characteristics of Mn- and Pr-doped ZnS Nanoparticles Optically Annealed with UV Illumination Japanese Journal of Applied Physics. 44: 7694-7697. DOI: 10.1143/Jjap.44.7694  0.323
2005 Kim H, Park B, Cho K, Kim JH, Lee JW, Kim DW, Kim S. Transport of Charge Carriers in HgTe/CdTe Core-Shell Nanoparticle Film Japanese Journal of Applied Physics. 44: 5703-5706. DOI: 10.1143/Jjap.44.5703  0.331
2005 Kim JH, Kim H, Cho K, Kim S. Time-dependent photocurrent of a CdTe nanoparticle film under the above-gap illumination Solid State Communications. 136: 220-223. DOI: 10.1016/J.Ssc.2005.07.020  0.363
2005 Lee JS, Sim SK, Kim KH, Cho K, Kim S. Amorphous lead oxide nanotubes filled partially with single-crystalline lead Materials Science and Engineering B-Advanced Functional Solid-State Materials. 122: 85-89. DOI: 10.1016/J.Mseb.2005.04.020  0.306
2005 Koh EK, Park IW, Choi H, Yoon M, Choh SH, Kim HS, Cho YM, Kim S, Park SS. Depth-dependent optical properties of a HVPE-grown freestanding Si-doped GaN single crystal Journal of Crystal Growth. 276: 37-42. DOI: 10.1016/J.Jcrysgro.2004.10.156  0.322
2004 Lee J, Sim S, Min B, Cho K, Kim H, Kim S. Effect of the Coating on the Structure and Optical Properties of GaN Nanowires Transactions On Electrical and Electronic Materials. 5: 113-119. DOI: 10.4313/Teem.2004.5.3.113  0.356
2004 Lee J, Sim S, Min B, Cho K, Kim S. Structural and Optoelectronic Properties of SnO 2 Nanowires Transactions On Electrical and Electronic Materials. 5: 93-97. DOI: 10.4313/Teem.2004.5.3.093  0.343
2004 Kang M, Lee JS, Sim SK, Kim H, Min B, Cho K, Kim G, Sung MY, Kim S, Han HS. Photocurrent and Photoluminescence Characteristics of Networked GaN Nanowires Japanese Journal of Applied Physics. 43: 6868-6872. DOI: 10.1143/Jjap.43.6868  0.355
2004 Ahn SE, Lee JS, Kim H, Kim S, Kang BH, Kim KH, Kim GT. Photoresponse of sol-gel-synthesized ZnO nanorods Applied Physics Letters. 84: 5022-5024. DOI: 10.1063/1.1763633  0.385
2004 Keem K, Kim H, Kim G, Lee JS, Min B, Cho K, Sung MY, Kim S. Photocurrent in ZnO nanowires grown from Au electrodes Applied Physics Letters. 84: 4376-4378. DOI: 10.1063/1.1756205  0.357
2004 Kang M, Lee JS, Sim SK, Min B, Cho K, Kim H, Sung MY, Kim S, Song SA, Lee MS. Structural and optical properties of as-synthesized, Ga2O3-coated, and Al2O3-coated GaN nanowires Thin Solid Films. 466: 265-271. DOI: 10.1016/J.Tsf.2004.02.025  0.328
2004 Kim H, Park K, Min B, Lee JS, Cho K, Kim S, Han HS, Hong SK, Yao T. Transmuted isotopes doped in neutron-irradiated ZnO thin films Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 217: 429-434. DOI: 10.1016/J.Nimb.2003.11.085  0.312
2004 Lee JS, Sim SK, Min B, Cho K, Kim SW, Kim S. Structural and optoelectronic properties of SnO2 nanowires synthesized from ball-milled SnO2 powders Journal of Crystal Growth. 267: 145-149. DOI: 10.1016/J.Jcrysgro.2004.03.030  0.342
2004 Hwang J, Min B, Lee JS, Keem K, Cho K, Sung MY, Lee MS, Kim S. Al2O3 Nanotubes Fabricated by Wet Etching of ZnO/Al2O3 Core/Shell Nanofibers Advanced Materials. 16: 422-425. DOI: 10.1002/Adma.200305209  0.325
2003 Lee J, Min B, Kim S. Synthesization of ZnO nanomaterials Transactions On Electrical and Electronic Materials. 4: 1-5. DOI: 10.4313/Teem.2003.4.5.001  0.365
2003 Bae SY, Seo HW, Park J, Yang H, Kim H, Kim S. Triangular gallium nitride nanorods Applied Physics Letters. 82: 4564-4566. DOI: 10.1063/1.1583873  0.365
2003 Seo HW, Bae SY, Park J, Yang H, Kang M, Kim S, Park JC, Lee SY. Nitrogen-doped gallium phosphide nanobelts Applied Physics Letters. 82: 3752-3754. DOI: 10.1063/1.1578521  0.338
2003 Lee JS, Min B, Cho K, Kim S, Park J, Lee YT, Kim NS, Lee MS, Park SO, Moon JT. Al2O3 nanotubes and nanorods fabricated by coating and filling of carbon nanotubes with atomic-layer deposition Journal of Crystal Growth. 254: 443-448. DOI: 10.1016/S0022-0248(03)01203-X  0.302
2003 Lee JS, Park K, Kang MI, Park IW, Kim S, Cho WK, Han HS, Kim S. ZnO nanomaterials synthesized from thermal evaporation of ball-milled ZnO powders Journal of Crystal Growth. 254: 423-431. DOI: 10.1016/S0022-0248(03)01197-7  0.372
2003 Lee JS, Kang MI, Kim S, Lee MS, Lee YK. Growth of zinc oxide nanowires by thermal evaporation on vicinal Si(1 0 0) substrate Journal of Crystal Growth. 249: 201-207. DOI: 10.1016/S0022-0248(02)02091-2  0.358
2003 Seo HW, Bae SY, Park J, Kang MI, Kim S. Nitrogen-doped gallium phosphide nanowires Chemical Physics Letters. 378: 420-424. DOI: 10.1016/J.Cplett.2003.07.004  0.343
2003 Min B, Lee JS, Cho K, Hwang JW, Kim H, Sung MY, Kim S, Park J, Seo HW, Bae SY, Lee MS, Park SO, Moon JT. Semiconductor nanowires surrounded by cylindrical Al2O3 shells Journal of Electronic Materials. 32: 1344-1348. DOI: 10.1007/S11664-003-0034-1  0.392
2002 Park K, Lee JS, Sung MY, Kim S. Structural and Optical Properties of ZnO Nanowires Synthesized from Ball-Milled ZnO Powders. Japanese Journal of Applied Physics. 41: 7317-7321. DOI: 10.1143/Jjap.41.7317  0.387
2002 Seo HW, Bae SY, Park J, Yang H, Park KS, Kim S. Strained gallium nitride nanowires Journal of Chemical Physics. 116: 9492-9499. DOI: 10.1063/1.1475748  0.394
2002 Seo HW, Bae SY, Park J, Yang H, Kim S. Synthesis of gallium phosphide nanowires via sublimation method Chemical Communications. 8: 2564-2565. DOI: 10.1039/B207995J  0.343
2002 Lee JS, Park K, Nahm S, Kim SW, Kim S. Ga2O3 nanomaterials synthesized from ball-milled GaN powders Journal of Crystal Growth. 244: 287-295. DOI: 10.1016/S0022-0248(02)01656-1  0.342
2001 Sung MY, Sung WJ, Lee YI, Park CI, Choi WB, Kim S. Effect of Excimer Laser Annealing on Optical Properties of GaN Films Deposited by R.F. Magnetron Sputtering Mrs Proceedings. 693: 61-66. DOI: 10.1557/Proc-693-I3.5.1  0.36
2001 Myoung JM, Shim KH, Kim S. Depth-Resolved Cathodoluminescence of III-V Nitride Films Grown by Plasma-Assisted Molecular Beam Epitaxy. Japanese Journal of Applied Physics. 40: 476-479. DOI: 10.1143/Jjap.40.476  0.37
2001 Hong JK, Kim S, Sung MY, Chung YC, Kim SU, Park MJ. The Subbands and Resonant Tunneling of a Two-Dimensional Electron Gas in a HgCdTe Metal-Insulator-Semiconductor Structure Japanese Journal of Applied Physics. 40: 2201-2204. DOI: 10.1143/Jjap.40.2201  0.328
2001 Kim S, Rhee SJ, White JO, Mitofsky AM, Li X, Papen GC, Coleman JJ, Bishop SG. Temperature dependence of photoluminescence spectra from multiple Er3+ sites in Er-implanted undoped and Mg-doped GaN Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 81: 136-139. DOI: 10.1016/S0921-5107(00)00694-2  0.317
2001 Kang EG, Kim S, Sung MY. Simulation of a new lateral trench IGBT employing effective p+ diverter for improving latch-up characteristics Microelectronics Journal. 32: 749-753. DOI: 10.1016/S0026-2692(01)00055-6  0.301
2000 Kim S, Spanier JE, Herman IP. Optical transmission, photoluminescence, and Raman scattering of porous SiC prepared from p-type 6H SiC Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 39: 5875-5878. DOI: 10.1143/Jjap.39.5875  0.708
2000 Shin JH, Seo SY, Kim S, Bishop SG. Photoluminescence excitation spectroscopy of erbium-doped silicon-rich silicon oxide Applied Physics Letters. 76: 1999-2001. DOI: 10.1063/1.126234  0.344
1997 Spanier JE, Cargill GS, Herman IP, Kim S, Goldstein DR, Kurtz AD, Weiss BZ. Effects of nanocrystalline structure and passivation on the photoluminescent properties of porous silicon carbide Materials Research Society Symposium - Proceedings. 452: 491-496. DOI: 10.1557/Proc-452-491  0.701
1997 Kim S, Chang G, Herman IP, Bevk J, Moore KL, Hall DG. Isoelectronic bound-exciton photoluminescence in strained beryllium-doped Si0.92Ge0.08 epilayers and Si0.92Ge0.08/Si superlattices at ambient and elevated hydrostatic pressure Physical Review B - Condensed Matter and Materials Physics. 55: 7130-7140. DOI: 10.1103/Physrevb.55.7130  0.602
1996 Kim S, Herman IP, Moore KL, Hall DG, Bevk J. Hydrostatic pressure dependence of isoelectronic bound excitons in beryllium-doped silicon. Physical Review. B, Condensed Matter. 53: 4434-4442. PMID 9983997 DOI: 10.1103/Physrevb.53.4434  0.592
1995 Kim S, Herman IP, Moore KL, Hall DG, Bevk J. Use of hydrostatic pressure to resolve phonon replicalike features in the photoluminescence spectrum of beryllium-doped silicon. Physical Review. B, Condensed Matter. 52: 16309-16312. PMID 9981017 DOI: 10.1103/Physrevb.52.16309  0.596
1995 Kim S, Herman IP, Tuchman JA, Doverspike K, Rowland LB, Gaskill DK. Photoluminescence from wurtzite GaN under hydrostatic pressure Applied Physics Letters. 67: 380. DOI: 10.1063/1.114635  0.747
1993 McCamy JW, Lowndes DH, Budai JD, Jellison GE, Herman IP, Kim S. Epitaxial ZnS, ZnSe and ZnS-ZnSe superlattices grown on (001)GaAs by pulsed-laser ablation Materials Research Society Symposium Proceedings. 285: 471-476. DOI: 10.1557/Proc-285-471  0.576
1993 Tuchman JA, Sui Z, Kim S, Herman IP. Photoluminescence of ZnSe/ZnMnSe superlattices under hydrostatic pressure Journal of Applied Physics. 73: 7730-7738. DOI: 10.1063/1.353971  0.742
1992 Tuchman JA, Kim S, Sui Z, Herman IP. Exciton photoluminescence in strained and unstrained ZnSe under hydrostatic pressure. Physical Review. B, Condensed Matter. 46: 13371-13378. PMID 10003384 DOI: 10.1103/Physrevb.46.13371  0.748
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