Year |
Citation |
Score |
2023 |
Marri I, Grillo S, Amato M, Ossicini S, Pulci O. Interplay of Quantum Confinement and Strain Effects in Type I to Type II Transition in GeSi Core-Shell Nanocrystals. The Journal of Physical Chemistry. C, Nanomaterials and Interfaces. 127: 1209-1219. PMID 36704663 DOI: 10.1021/acs.jpcc.2c07024 |
0.741 |
|
2021 |
Marri I, Ossicini S. Multiple exciton generation in isolated and interacting silicon nanocrystals. Nanoscale. PMID 34250528 DOI: 10.1039/d1nr01747k |
0.362 |
|
2020 |
Marri I, Amato M, Bertocchi M, Ferretti A, Varsano D, Ossicini S. Surface chemistry effects on work function, ionization potential and electronic affinity of Si(100), Ge(100) surfaces and SiGe heterostructures. Physical Chemistry Chemical Physics : Pccp. PMID 33164017 DOI: 10.1039/d0cp04013d |
0.721 |
|
2020 |
Ossicini S, Marri I, Amato M, Palummo M, Canadell E, Rurali R. Ab initio studies of the optoelectronic structure of undoped and doped silicon nanocrystals and nanowires: the role of size, passivation, symmetry and phase. Faraday Discussions. PMID 32108213 DOI: 10.1039/C9Fd00085B |
0.789 |
|
2019 |
Amato M, Ossicini S, Canadell E, Rurali R. Preferential positioning, stability and segregation of dopants in hexagonal Si nanowires. Nano Letters. PMID 30608707 DOI: 10.1021/Acs.Nanolett.8B04083 |
0.756 |
|
2018 |
Marri I, Ossicini S. First-principle investigations of carrier multiplication in Si nanocrystals: A short review Arxiv: Materials Science. 1990: 20002. DOI: 10.1063/1.5047756 |
0.459 |
|
2018 |
Marri I, Amato M, Guerra R, Ossicini S. First Principles Modeling of Si/Ge Nanostructures for Photovoltaic and Optoelectronic Applications Physica Status Solidi (B). 255: 1700627. DOI: 10.1002/Pssb.201700627 |
0.749 |
|
2017 |
Bertocchi M, Degoli E, Véniard V, Luppi E, Ossicini S. Second Harmonic Generation in Silicon Based Heterostructures: The Role of Strain and Symmetry Nanoscience and Nanotechnology Letters. 9: 1102-1107. DOI: 10.1166/Nnl.2017.2445 |
0.709 |
|
2017 |
Marri I, Degoli E, Ossicini S. Doped and codoped silicon nanocrystals: The role of surfaces and interfaces Progress in Surface Science. 92: 375-408. DOI: 10.1016/J.Progsurf.2017.07.003 |
0.559 |
|
2017 |
Marri I, Degoli E, Ossicini S. First Principle Studies of B and P Doped Si Nanocrystals Physica Status Solidi (a). 215: 1700414. DOI: 10.1002/Pssa.201700414 |
0.539 |
|
2016 |
Amato M, Bertocchi M, Ossicini S. Work function bowing in Si1- xGex heterostructures: Ab initio results Journal of Applied Physics. 119. DOI: 10.1063/1.4942526 |
0.731 |
|
2016 |
Marri I, Govoni M, Ossicini S. First-principles calculations of electronic coupling effects in silicon nanocrystals: Influence on near band-edge states and on carrier multiplication processes Solar Energy Materials and Solar Cells. 145: 162-169. DOI: 10.1016/J.Solmat.2015.07.013 |
0.734 |
|
2015 |
Palummo M, Hogan C, Ossicini S. Ab initio energy loss spectra of Si and Ge nanowires. Physical Chemistry Chemical Physics : Pccp. 17: 29085-9. PMID 26461466 DOI: 10.1039/C5Cp05074J |
0.44 |
|
2015 |
Garcia-Castello N, Illera S, Prades JD, Ossicini S, Cirera A, Guerra R. Energetics and carrier transport in doped Si/SiO2 quantum dots. Nanoscale. 7: 12564-71. PMID 26144524 DOI: 10.1039/C5Nr02616D |
0.507 |
|
2015 |
Marri I, Govoni M, Ossicini S. Carrier multiplication in silicon nanocrystals: ab initio results. Beilstein Journal of Nanotechnology. 6: 343-52. PMID 25821673 DOI: 10.3762/Bjnano.6.33 |
0.672 |
|
2015 |
Luppi E, Degoli E, Bertocchi M, Ossicini S, Véniard V. Strain-designed strategy to induce and enhance second-harmonic generation in centrosymmetric and noncentrosymmetric materials Physical Review B - Condensed Matter and Materials Physics. 92. DOI: 10.1103/Physrevb.92.075204 |
0.676 |
|
2015 |
Pouch S, Amato M, Bertocchi M, Ossicini S, Chevalier N, Mélin T, Hartmann JM, Renault O, Delaye V, Mariolle D, Borowik L. Work Function Measurement of Silicon Germanium Heterostructures Combining Kelvin Force Microscopy and X-ray Photoelectron Emission Microscopy Journal of Physical Chemistry C. 119: 26776-26782. DOI: 10.1021/Acs.Jpcc.5B09278 |
0.692 |
|
2015 |
Marri I, Govoni M, Ossicini S. Carrier multiplication in isolated and interacting silicon nanocrystals Nanotechnology and Photovoltaic Devices: Light Energy Harvesting With Group Iv Nanostructures. 177-202. |
0.657 |
|
2015 |
Guerra R, Ossicini S. Ab initio calculations of the electronic and optical properties of silicon quantum dots embedded in different matrices Nanotechnology and Photovoltaic Devices: Light Energy Harvesting With Group Iv Nanostructures. 65-98. |
0.339 |
|
2014 |
Marri I, Govoni M, Ossicini S. Red-shifted carrier multiplication energy threshold and exciton recycling mechanisms in strongly interacting silicon nanocrystals. Journal of the American Chemical Society. 136: 13257-66. PMID 25092549 DOI: 10.1021/Ja5057328 |
0.708 |
|
2014 |
Bisri SZ, Degoli E, Spallanzani N, Krishnan G, Kooi BJ, Ghica C, Yarema M, Heiss W, Pulci O, Ossicini S, Loi MA. Determination of the electronic energy levels of colloidal nanocrystals using field-effect transistors and Ab-initio calculations. Advanced Materials (Deerfield Beach, Fla.). 26: 5639-45. PMID 24920491 DOI: 10.1002/Adma.201400660 |
0.397 |
|
2014 |
Bertocchi M, Luppi E, Degoli E, Véniard V, Ossicini S. Defects and strain enhancements of second-harmonic generation in Si/Ge superlattices. The Journal of Chemical Physics. 140: 214705. PMID 24908033 DOI: 10.1063/1.4880756 |
0.748 |
|
2014 |
Guerra R, Ossicini S. Preferential positioning of dopants and co-dopants in embedded and freestanding Si nanocrystals. Journal of the American Chemical Society. 136: 4404-9. PMID 24564481 DOI: 10.1021/Ja5002357 |
0.472 |
|
2014 |
Amato M, Palummo M, Rurali R, Ossicini S. Silicon-germanium nanowires: chemistry and physics in play, from basic principles to advanced applications. Chemical Reviews. 114: 1371-412. PMID 24266833 DOI: 10.1021/Cr400261Y |
0.721 |
|
2014 |
Amato M, Rurali R, Palummo M, Ossicini S. Understanding doping at the nanoscale: The case of codoped Si and Ge nanowires Journal of Physics D: Applied Physics. 47. DOI: 10.1088/0022-3727/47/39/394013 |
0.792 |
|
2014 |
Iori F, Ossicini S, Rurali R. Structural and electronic properties of Si1−xGex alloy nanowires Journal of Applied Physics. 116: 154301. DOI: 10.1063/1.4898130 |
0.458 |
|
2014 |
Iori F, Ossicini S, Rurali R. Conductance fluctuations in Si nanowires studied from first-principles Journal of Applied Physics. 116. DOI: 10.1063/1.4892673 |
0.451 |
|
2014 |
Summonte C, Allegrezza M, Bellettato M, Liscio F, Canino M, Desalvo A, López-Vidrier J, Hernández S, López-Conesa L, Estradé S, Peiró F, Garrido B, Löper P, Schnabel M, Janz S, ... ... Ossicini S, et al. Silicon nanocrystals in carbide matrix Solar Energy Materials and Solar Cells. 128: 138-149. DOI: 10.1016/J.Solmat.2014.05.003 |
0.468 |
|
2013 |
Garcia-Castello N, Illera S, Guerra R, Prades JD, Ossicini S, Cirera A. Silicon quantum dots embedded in a SiO2 matrix: From structural study to carrier transport properties Physical Review B - Condensed Matter and Materials Physics. 88. DOI: 10.1103/Physrevb.88.075322 |
0.43 |
|
2013 |
Guerra R, Ossicini S. Role of strain in interacting silicon nanoclusters Physical Review B - Condensed Matter and Materials Physics. 87. DOI: 10.1103/Physrevb.87.165441 |
0.422 |
|
2013 |
Guerra R, Cigarini F, Ossicini S. Optical absorption and emission of silicon nanocrystals: From single to collective response Journal of Applied Physics. 113. DOI: 10.1063/1.4799394 |
0.411 |
|
2013 |
Marsili M, Botti S, Palummo M, Degoli E, Pulci O, Weissker HC, Marques MAL, Ossicini S, Del Sole R. Ab initio electronic gaps of Ge nanodots: The role of self-energy effects Journal of Physical Chemistry C. 117: 14229-14234. DOI: 10.1021/Jp3121269 |
0.478 |
|
2013 |
Löper P, Canino M, Lõpez-Vidrier J, Schnabel M, Schindler F, Heinz F, Witzky A, Bellettato M, Allegrezza M, Hiller D, Hartel A, Gutsch S, Hernández S, Guerra R, Ossicini S, et al. Silicon nanocrystals from high-temperature annealing: Characterization on device level Physica Status Solidi (a) Applications and Materials Science. 210: 669-675. DOI: 10.1002/Pssa.201200824 |
0.335 |
|
2013 |
Guerra R, Ossicini S. Silicon nanocrystals embedded in SiO2matrices: Ab initio results Nanostructured Semiconductors: From Basic Research to Applications. 393-452. |
0.38 |
|
2012 |
Amato M, Ossicini S, Rurali R. Electron transport in SiGe alloy nanowires in the ballistic regime from first-principles. Nano Letters. 12: 2717-21. PMID 22545577 DOI: 10.1021/Nl204313V |
0.713 |
|
2012 |
Cazzanelli M, Bianco F, Borga E, Pucker G, Ghulinyan M, Degoli E, Luppi E, Véniard V, Ossicini S, Modotto D, Wabnitz S, Pierobon R, Pavesi L. Second-harmonic generation in silicon waveguides strained by silicon nitride. Nature Materials. 11: 148-54. PMID 22138793 DOI: 10.1038/Nmat3200 |
0.737 |
|
2012 |
Khriachtchev L, Ossicini S, Iacona F, Gourbilleau F. Silicon nanoscale materials: From theoretical simulations to photonic applications International Journal of Photoenergy. 2012. DOI: 10.1155/2012/872576 |
0.469 |
|
2012 |
Khriachtchev L, Ossicini S, Iacona F, Gourbilleau F. Photonic properties of silicon-based materials International Journal of Photoenergy. 2012. DOI: 10.1155/2012/202985 |
0.363 |
|
2012 |
Cazzanelli M, Bianco F, Pavesi L, Ghulinyan M, Pucker G, Modotto D, Wabnitz S, Pigozzo FM, Ossicini S, Degoli E, Luppi E, Véniard V. Second-order nonlinear silicon photonics Spie Newsroom. 1-4. DOI: 10.1117/2.1201203.004138 |
0.752 |
|
2012 |
Bertocchi M, Luppi E, Degoli E, Véniard V, Ossicini S. Large crystal local-field effects in second-harmonic generation of a Si/CaF 2 interface: An ab initio study Physical Review B - Condensed Matter and Materials Physics. 86. DOI: 10.1103/Physrevb.86.035309 |
0.737 |
|
2012 |
Amato M, Palummo M, Rurali R, Ossicini S. Optical absorption modulation by selective codoping of SiGe core-shell nanowires Journal of Applied Physics. 112. DOI: 10.1063/1.4768475 |
0.756 |
|
2012 |
Guerra R, Ippolito M, Meloni S, Ossicini S. The influence of silicon nanoclusters on the optical properties of a-SiN x samples: A theoretical study Applied Physics Letters. 100. DOI: 10.1063/1.4711017 |
0.448 |
|
2012 |
Govoni M, Marri I, Ossicini S. Carrier multiplication between interacting nanocrystals for fostering silicon-based photovoltaics Nature Photonics. 6: 672-679. DOI: 10.1038/Nphoton.2012.206 |
0.686 |
|
2012 |
Amato M, Palummo M, Ossicini S. Band structure analysis in SiGe nanowires Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 177: 705-711. DOI: 10.1016/J.Mseb.2011.10.008 |
0.77 |
|
2012 |
Amato M, Rurali R, Ossicini S. Doping of SiGe core-shell nanowires Journal of Computational Electronics. 11: 272-279. DOI: 10.1007/S10825-012-0394-Y |
0.781 |
|
2011 |
Amato M, Ossicini S, Rurali R. Band-offset driven efficiency of the doping of SiGe core-shell nanowires. Nano Letters. 11: 594-8. PMID 21188962 DOI: 10.1021/Nl103621S |
0.766 |
|
2011 |
Luppi E, Hübener H, Bertocchi M, Degoli E, Ossicini S, Véniard V. Second-harmonic generation spectroscopy from time-dependent density-functional theory Materials Research Society Symposium Proceedings. 1370: 29-34. DOI: 10.1557/Opl.2011.789 |
0.725 |
|
2011 |
Guerra R, Marsili M, Pulci O, Ossicini S. Local-field effects in silicon nanoclusters Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.075342 |
0.358 |
|
2011 |
Govoni M, Marri I, Ossicini S. Auger recombination in Si and GaAs semiconductors: Ab initio results Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.075215 |
0.748 |
|
2010 |
Ossicini S, Amato M, Guerra R, Palummo M, Pulci O. Silicon and Germanium Nanostructures for Photovoltaic Applications: Ab-Initio Results. Nanoscale Research Letters. 5: 1637-1649. PMID 21076696 DOI: 10.1007/S11671-010-9688-9 |
0.785 |
|
2010 |
Palummo M, Amato M, Ossicini S. Ab initio optoelectronic properties of SiGe nanowires: Role of many-body effects Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/Physrevb.82.073305 |
0.715 |
|
2010 |
Chiodo L, García-Lastra JM, Iacomino A, Ossicini S, Zhao J, Petek H, Rubio A. Self-energy and excitonic effects in the electronic and optical properties of TiO2 crystalline phases Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/Physrevb.82.045207 |
0.422 |
|
2010 |
Guerra R, Ossicini S. High luminescence in small Si/SiO2 nanocrystals: A theoretical study Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.245307 |
0.492 |
|
2010 |
Palummo M, Iori F, Del Sole R, Ossicini S. Giant excitonic exchange splitting in Si nanowires: First-principles calculations Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.121303 |
0.383 |
|
2010 |
Pulci O, Degoli E, Iori F, Marsili M, Palummo M, Del Sole R, Ossicini S. Electronic and optical properties of Si and Ge nanocrystals: An ab initio study Superlattices and Microstructures. 47: 178-181. DOI: 10.1016/J.Spmi.2009.07.004 |
0.558 |
|
2010 |
Palummo M, Ossicini S, Del Sole R. Many-body effects on the electronic and optical properties of Si nanowires from ab initio approaches Physica Status Solidi (B) Basic Research. 247: 2089-2095. DOI: 10.1002/Pssb.200983958 |
0.512 |
|
2010 |
Amato M, Palummo M, Ossicini S. Segregation, quantum confinement effect and band offset for [110] SiGe NWs Physica Status Solidi (B) Basic Research. 247: 2096-2101. DOI: 10.1002/Pssb.200983931 |
0.753 |
|
2010 |
Guerra R, Degoli E, Marsili M, Pulci O, Ossicini S. Local-fields and disorder effects in free-standing and embedded Si nanocrystallites Physica Status Solidi (B) Basic Research. 247: 2113-2117. DOI: 10.1002/Pssb.200983926 |
0.524 |
|
2010 |
Bulutay C, Ossicini S. Electronic and Optical Properties of Silicon Nanocrystals Silicon Nanocrystals: Fundamentals, Synthesis and Applications. 5-41. DOI: 10.1002/9783527629954.ch2 |
0.342 |
|
2009 |
Iacomino A, Cantele G, Trani F, Ninno D, Marri I, Ossicini S. The role of the surface coverage on the structural and electronic properties of TiO2 nanocrystals Materials Research Society Symposium Proceedings. 1178: 121-126. DOI: 10.1557/Proc-1178-Aa09-34 |
0.368 |
|
2009 |
Amato M, Palummo M, Ossicini S. SiGe nanowires: Structural stability, quantum confinement, and electronic properties Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/Physrevb.80.235333 |
0.766 |
|
2009 |
Guerra R, Degoli E, Ossicini S. Size, oxidation, and strain in small Si/ SiO2 nanocrystals Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/Physrevb.80.155332 |
0.528 |
|
2009 |
Amato M, Palummo M, Ossicini S. Reduced quantum confinement effect and electron-hole separation in SiGe nanowires Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.201302 |
0.777 |
|
2009 |
Guerra R, Marri I, Magri R, Martin-Samos L, Pulci O, Degoli E, Ossicini S. Silicon nanocrystallites in a SiO2 matrix: Role of disorder and size Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.155320 |
0.454 |
|
2009 |
Degoli E, Ossicini S. Engineering Quantum Confined Silicon Nanostructures: Ab-Initio Study of the Structural, Electronic and Optical Properties Advances in Quantum Chemistry. 58: 203-279. DOI: 10.1016/S0065-3276(09)00710-2 |
0.601 |
|
2009 |
Palummo M, Iori F, Del Sole R, Ossicini S. Electronic properties and dielectric response of surfaces and nanowires of silicon from ab-initio approaches Superlattices and Microstructures. 46: 234-239. DOI: 10.1016/J.Spmi.2008.12.026 |
0.514 |
|
2009 |
Guerra R, Marri I, Magri R, Martin-Samos L, Pulci O, Degoli E, Ossicini S. Optical properties of silicon nanocrystallites in SiO2 matrix: Crystalline vs. amorphous case Superlattices and Microstructures. 46: 246-252. DOI: 10.1016/J.Spmi.2008.10.020 |
0.465 |
|
2009 |
Trani F, Ninno D, Cantele G, Degoli E, Ossicini S. Impurity screening in silicon nanocrystals Physica E: Low-Dimensional Systems and Nanostructures. 41: 966-968. DOI: 10.1016/J.Physe.2008.08.028 |
0.411 |
|
2009 |
Iori F, Ossicini S. Effects of simultaneous doping with boron and phosphorous on the structural, electronic and optical properties of silicon nanostructures Physica E: Low-Dimensional Systems and Nanostructures. 41: 939-946. DOI: 10.1016/J.Physe.2008.08.010 |
0.525 |
|
2009 |
Degoli E, Guerra R, Iori F, Magri R, Marri I, Pulci O, Bisi O, Ossicini S. Ab-initio calculations of luminescence and optical gain properties in silicon nanostructures Comptes Rendus Physique. 10: 575-586. DOI: 10.1016/J.Crhy.2008.09.003 |
0.531 |
|
2008 |
Ossicini S, Bisi O, Degoli E, Marri I, Iori F, Luppi E, Magri R, Poli R, Cantele G, Ninno D, Trani F, Marsili M, Pulci O, Olevano V, Gatti M, et al. First-principles study of silicon nanocrystals: structural and electronic properties, absorption, emission, and doping. Journal of Nanoscience and Nanotechnology. 8: 479-92. PMID 18464361 DOI: 10.1166/Jnn.2008.A009 |
0.7 |
|
2008 |
Ramos LE, Degoli E, Cantele G, Ossicini S, Ninno D, Furthmüller J, Bechstedt F. Optical absorption spectra of doped and codoped Si nanocrystallites Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.235310 |
0.401 |
|
2008 |
Iacomino A, Cantele G, Ninno D, Marri I, Ossicini S. Structural, electronic, and surface properties of anatase TiO2 nanocrystals from first principles Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.075405 |
0.415 |
|
2008 |
Marri I, Ossicini S. Oxygen vacancy effects on the Schottky barrier height at the Au/TiO2(110) interface: A first principle study Solid State Communications. 147: 205-207. DOI: 10.1016/J.Ssc.2008.05.018 |
0.384 |
|
2008 |
Iori F, Degoli E, Palummo M, Ossicini S. Novel optoelectronic properties of simultaneously n- and p-doped silicon nanostructures Superlattices and Microstructures. 44: 337-347. DOI: 10.1016/J.Spmi.2007.09.002 |
0.545 |
|
2007 |
Bruno M, Palummo M, Marini A, Del Sole R, Ossicini S. From Si nanowires to porous silicon: the role of excitonic effects. Physical Review Letters. 98: 036807. PMID 17358714 DOI: 10.1103/Physrevlett.98.036807 |
0.527 |
|
2007 |
Magri R, Degoli E, Iori F, Luppi E, Pulci O, Ossicini S, Cantele G, Trani F, Ninno D. Role of surface passivation and doping in silicon nanocrystals Journal of Computational Methods in Sciences and Engineering. 7: 219-232. DOI: 10.3233/Jcm-2007-73-404 |
0.678 |
|
2007 |
Iori F, Degoli E, Magri R, Marri I, Cantele G, Ninno D, Trani F, Pulci O, Ossicini S. Engineering silicon nanocrystals: Theoretical study of the effect of codoping with boron and phosphorus Physical Review B - Condensed Matter and Materials Physics. 76. DOI: 10.1103/Physrevb.76.085302 |
0.503 |
|
2007 |
Luppi E, Iori F, Magri R, Pulci O, Ossicini S, Degoli E, Olevano V. Excitons in silicon nanocrystallites: The nature of luminescence Physical Review B - Condensed Matter and Materials Physics. 75. DOI: 10.1103/Physrevb.75.033303 |
0.643 |
|
2007 |
Ramos LE, Degoli E, Cantele G, Ossicini S, Ninno D, Furthmüller J, Bechstedt F. Structural features and electronic properties of group-III-, group-IV-, and group-V-doped Si nanocrystallites Journal of Physics Condensed Matter. 19. DOI: 10.1088/0953-8984/19/46/466211 |
0.434 |
|
2007 |
Magri R, Iori F, Degoli E, Pulci O, Ossicini S. Codoping goes nano: Structural and optical properties of boron and phosphorus codoped silicon nanocrystals Aip Conference Proceedings. 963: 359-362. DOI: 10.1063/1.2836084 |
0.314 |
|
2007 |
Ossicini S, Degoli E, Iori F, Pulci O, Cantele G, Magri R, Bisi O, Trani F, Ninno D. Doping in silicon nanocrystals Surface Science. 601: 2724-2729. DOI: 10.1016/J.Susc.2006.12.083 |
0.439 |
|
2007 |
Bruno M, Palummo M, Ossicini S, Del Sole R. First-principles optical properties of silicon and germanium nanowires Surface Science. 601: 2707-2711. DOI: 10.1016/J.Susc.2006.12.021 |
0.496 |
|
2007 |
Palummo M, Bruno M, Pulci O, Luppi E, Degoli E, Ossicini S, Del Sole R. Ab-initio electronic and optical properties of low dimensional systems: From single particle to many-body approaches Surface Science. 601: 2696-2701. DOI: 10.1016/J.Susc.2006.12.019 |
0.586 |
|
2007 |
Iori F, Ossicini S, Degoli E, Luppi E, Poli R, Magri R, Cantele G, Trani F, Ninno D. Doping in silicon nanostructures Physica Status Solidi (a) Applications and Materials Science. 204: 1312-1317. DOI: 10.1002/Pssa.200674323 |
0.668 |
|
2006 |
Ninno D, Trani F, Cantele G, Hameeuw KJ, Iadonisi G, Degoli E, Ossicini S. Thomas-Fermi model of electronic screening in semiconductor nanocrystals Europhysics Letters. 74: 519-525. DOI: 10.1209/Epl/I2005-10544-9 |
0.345 |
|
2006 |
Ossicini S, Iori F, Degoli E, Luppi E, Magri R, Poli R, Cantele G, Trani F, Ninno D. Understanding doping in silicon nanostructures Ieee Journal On Selected Topics in Quantum Electronics. 12: 1585-1590. DOI: 10.1109/Jstqe.2006.884087 |
0.678 |
|
2006 |
Trani F, Ninno D, Cantele G, Iadonisi G, Hameeuw K, Degoli E, Ossicini S. Screening in semiconductor nanocrystals: Ab initio results and Thomas-Fermi theory Physical Review B - Condensed Matter and Materials Physics. 73. DOI: 10.1103/Physrevb.73.245430 |
0.373 |
|
2006 |
Iori F, Degoli E, Luppi E, Magri R, Marri I, Cantele G, Ninno D, Trani F, Ossicini S. Doping in silicon nanocrystals: An ab initio study of the structural, electronic and optical properties Journal of Luminescence. 121: 335-339. DOI: 10.1016/J.Jlumin.2006.08.062 |
0.682 |
|
2005 |
Ossicini S, Iori F, Degoli E, Luppi E, Magri R, Cantele G, Trani F, Ninno D. P and B single- and co-doped silicon nanocrystals: Formation and activation energies, electronic and optical properties 2005 Ieee International Conference On Group Iv Photonics. 2005: 60-62. DOI: 10.1109/GROUP4.2005.1516403 |
0.574 |
|
2005 |
Bruno M, Palummo M, Marini A, Del Sole R, Olevano V, Kholod AN, Ossicini S. Excitons in germanium nanowires: Quantum confinement, orientation, and anisotropy effects within a first-principles approach Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.153310 |
0.427 |
|
2005 |
Cantele G, Degoli E, Luppi E, Magri R, Ninno D, Iadonisi G, Ossicini S. First-principles study of n- and p-doped silicon nanoclusters Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.113303 |
0.622 |
|
2005 |
Luppi M, Ossicini S. Ab initio study on oxidized silicon clusters and silicon nanocrystals embedded in SiO 2: Beyond the quantum confinement effect Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/Physrevb.71.035340 |
0.499 |
|
2005 |
Ossicini S, Degoli E, Iori F, Luppi E, Magri R, Cantele G, Trani F, Ninno D. Simultaneously B- and P-doped silicon nanoclusters: Formation energies and electronic properties Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2119424 |
0.686 |
|
2005 |
Degoli E, Cantele G, Luppi E, Magri R, Ossicini S, Ninno D, Bisi O, Onida G, Gatti M, Incze A, Pulci O, Del Sole R. Ab-initio calculations of the electronic properties of silicon nanocrystals: Absorption, emission, stokes shift Aip Conference Proceedings. 772: 859-860. DOI: 10.1063/1.1994377 |
0.575 |
|
2005 |
Luppi E, Degoli E, Cantele G, Ossicini S, Magri R, Ninno D, Bisi O, Pulci O, Onida G, Gatti M, Incze A, Del Sole R. The electronic and optical properties of silicon nanoclusters: Absorption and emission Optical Materials. 27: 1008-1013. DOI: 10.1016/J.Optmat.2004.08.054 |
0.63 |
|
2005 |
Degoli E, Ossicini S, Cantele G, Luppi E, Magri R, Ninno D, Bisi O. Formation energies of silicon nanocrystals: Role of dimension and passivation Physica Status Solidi C: Conferences. 2: 3354-3358. DOI: 10.1002/Pssc.200561166 |
0.595 |
|
2005 |
Cantele G, Degoli E, Luppi E, Magri R, Ninno D, Bisi O, Ossicini S, Iadonisi G. Electronic, structural and optical properties of hydrogenated silicon nanocrystals: The role of the excited states Physica Status Solidi C: Conferences. 2: 3263-3267. DOI: 10.1002/Pssc.200461139 |
0.625 |
|
2004 |
Kholod AN, Shaposhnikov VL, Sobolev N, Borisenko VE, D’Avitaya FA, Ossicini S. Erratum: Orientation effects in the electronic and optical properties of germanium quantum wires [Phys. Rev. B70, 035317 (2004)] Physical Review B. 70. DOI: 10.1103/Physrevb.70.249906 |
0.38 |
|
2004 |
Kholod AN, Shaposhnikov VL, Sobolev N, Borisenko VE, D'Avitaya FA, Ossicini S. Orientation effects in the electronic and optical properties of germanium quantum wires Physical Review B - Condensed Matter and Materials Physics. 70: 035317-1-035317-5. DOI: 10.1103/Physrevb.70.035317 |
0.436 |
|
2004 |
Degoli E, Cantele G, Luppi E, Magri R, Ninno D, Bisi O, Ossicini S. Ab initio structural and electronic properties of hydrogenated silicon nanoclusters in the ground and excited state Physical Review B - Condensed Matter and Materials Physics. 69: 155411-1-155411-10. DOI: 10.1103/Physrevb.69.155411 |
0.638 |
|
2003 |
Luppi M, Ossicini S. Isolated and embedded silicon based nanodots: The role of surface oxygen Materials Research Society Symposium - Proceedings. 737: 775-780. DOI: 10.1557/Proc-737-F10.5 |
0.323 |
|
2003 |
Ossicini S, Magri R, Degoli E, Luppi M, Luppi E. Surface and confinement effects on the optical and structural properties of silicon nanocrystals Proceedings of Spie - the International Society For Optical Engineering. 5222: 1-11. DOI: 10.1117/12.508481 |
0.552 |
|
2003 |
Daldosso N, Luppi M, Ossicini S, Degoli E, Magri R, Dalba G, Fornasini P, Grisenti R, Rocca F, Pavesi L, Boninelli S, Priolo F, Spinella C, Iacona F. Role of the interface region on the optoelectronic properties of silicon nanocrystals embedded in SiO2 Physical Review B - Condensed Matter and Materials Physics. 68: 853271-853278. DOI: 10.1103/Physrevb.68.085327 |
0.494 |
|
2003 |
Luppi M, Ossicini S. Multiple Si=0 bonds at the silicon cluster surface Journal of Applied Physics. 94: 2130-2131. DOI: 10.1063/1.1586954 |
0.454 |
|
2003 |
Dal Negro L, Cazzanelli M, Pavesi L, Ossicini S, Pacifici D, Franzò G, Priolo F, Iacona F. Dynamics of stimulated emission in silicon nanocrystals Applied Physics Letters. 82: 4636-4638. DOI: 10.1063/1.1586779 |
0.333 |
|
2003 |
Rosini M, Jacoboni C, Ossicini S. Semiclassical and Quantum Transport in Si/SiO2 Superlattices Journal of Computational Electronics. 2: 417-422. DOI: 10.1023/B:Jcel.0000011463.80312.Fa |
0.44 |
|
2003 |
Rosini M, Jacoboni C, Ossicini S. Monte Carlo analysis of electron heating in Si/SiO2 superlattices Physica E: Low-Dimensional Systems and Nanostructures. 16: 455-460. DOI: 10.1016/S1386-9477(02)00656-2 |
0.398 |
|
2003 |
Luppi M, Ossicini S. Oxygen role on the optoelectronic properties of silicon nanodots Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 101: 34-38. DOI: 10.1016/S0921-5107(02)00700-6 |
0.445 |
|
2003 |
Kholod AN, Ossicini S, Borisenko VE, Arnaud d'Avitaya F. Optical properties of Ge and Si nanosheets - Confinement and symmetry effects Surface Science. 527: 30-40. DOI: 10.1016/S0039-6028(03)00054-2 |
0.503 |
|
2003 |
Luppi M, Ossicini S. Oxygen role on the structural and optoelectronic properties of silicon nanodots Physica Status Solidi (a) Applied Research. 197: 251-256. DOI: 10.1002/Pssa.200306510 |
0.498 |
|
2003 |
Daldosso N, Luppi M, Dalba G, Pavesi L, Rocca F, Priolo F, Franzò G, Iacona F, Degoli E, Magri R, Ossicini S. Experimental and Theoretical Joint Study on the Electronic and Structural Properties of Silicon Nanocrystals Embedded in SiO2: Active Role of the Interface Region Materials Research Society Symposium - Proceedings. 770: 87-92. |
0.353 |
|
2003 |
Degoli E, Ossicini S, Luppi M, Luppi E, Magri R, Cantele G, Ninno D. Electronic and Optical Properties of Silicon Nanocrystals: Structural Effects Materials Research Society Symposium - Proceedings. 770: 57-62. |
0.584 |
|
2002 |
Rosini M, Jacoboni C, Ossicini S. Monte Carlo simulation of electron transport in Si/SiO2 superlattices Proceedings of Spie - the International Society For Optical Engineering. 4808: 170-179. DOI: 10.1117/12.452215 |
0.301 |
|
2002 |
Ossicini S, Degoli E, Luppi M, Magri R. Si nanostructures embedded in SiO2: Electronic and optical properties Proceedings of Spie - the International Society For Optical Engineering. 4808: 73-84. DOI: 10.1117/12.452043 |
0.413 |
|
2002 |
Rosini M, Jacoboni C, Ossicini S. Monte Carlo simulation of electron transport in Si/SiO2 superlattices: Vertical transport enhanced by a parallel field Physical Review B - Condensed Matter and Materials Physics. 66: 1553321-15533210. DOI: 10.1103/Physrevb.66.155332 |
0.445 |
|
2002 |
Filonov AB, Ossicini S, Bassani F, Arnaud D'Avitaya F. Effect of oxygen on the optical properties of small silicon pyramidal clusters Physical Review B - Condensed Matter and Materials Physics. 65: 1953171-1953179. DOI: 10.1103/Physrevb.65.195317 |
0.401 |
|
2002 |
Kholod AN, Ossicini S, Borisenko VE, D'Avitaya FA. True direct gap absorption in germanium quantum films Physical Review B - Condensed Matter and Materials Physics. 65: 1153151-1153154. DOI: 10.1103/Physrevb.65.115315 |
0.33 |
|
2001 |
Prakash GV, Daldosso N, Degoli E, Iacona F, Cazzanelli M, Gaburro Z, Pucker G, Dalba P, Rocca F, Ceretta Moreira E, Franzò G, Pacifici D, Priolo F, Arcangeli C, Filonov AB, ... Ossicini S, et al. Structural and optical properties of silicon nanocrystals grown by plasma-enhanced chemical vapor deposition. Journal of Nanoscience and Nanotechnology. 1: 159-68. PMID 12914047 DOI: 10.1166/jnn.2001.024 |
0.388 |
|
2001 |
Magri R, Ossicini S. In-plane anisotropy of the optical properties of (In0.5Ga0.5As)n/(InP)n superlattices Physical Review B - Condensed Matter and Materials Physics. 63: 1653031-1653039. DOI: 10.1103/Physrevb.63.165303 |
0.374 |
|
2001 |
Degoli E, Ossicini S. Role of defects in Si/SiO2 quantum wells Optical Materials. 17: 95-98. DOI: 10.1016/S0925-3467(01)00027-1 |
0.498 |
|
2001 |
Ghidoni C, Magri R, Ossicini S. The electronic and optical properties of InGaAs/InP and InAlAs/InP superlattices Surface Science. 489: 59-71. DOI: 10.1016/S0039-6028(01)01128-1 |
0.401 |
|
2001 |
Said M, Zid FB, Bertoni CM, Ossicini S. First-principles electronic structure of rare-earth arsenides European Physical Journal B. 23: 191-199. DOI: 10.1007/S100510170068 |
0.399 |
|
2001 |
Ossicini S. The optoelectronic properties of silicon nanostructures: The role of the interfaces Proceedings of the International Semiconductor Conference, Cas. 1: 23-26. |
0.33 |
|
2000 |
Degoli E, Ossicini S, Barbato D, Luppi M, Pettenati E. Symmetry and passivation dependence of the optical properties of nanocrystalline silicon structures Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 69: 444-448. DOI: 10.1016/S0921-5107(99)00241-X |
0.507 |
|
2000 |
Bisi O, Ossicini S, Pavesi L. Porous silicon: A quantum sponge structure for silicon based optoelectronics Surface Science Reports. 38: 1-126. DOI: 10.1016/S0167-5729(99)00012-6 |
0.501 |
|
2000 |
Degoli E, Ossicini S. The electronic and optical properties of Si/SiO2 superlattices: Role of confined and defect states Surface Science. 470: 32-42. DOI: 10.1016/S0039-6028(00)00832-3 |
0.531 |
|
2000 |
Degoli E, Luppi M, Ossicini S. From undulating Si quantum wires to Si quantum dots: a model for porous silicon Physica Status Solidi (a) Applied Research. 182: 301-306. DOI: 10.1002/1521-396X(200011)182:1<301::Aid-Pssa301>3.0.Co;2-N |
0.478 |
|
1998 |
Magri R, Ossicini S. Role of symmetry reduction in the polarization dependence of the optical absorption in non-common-atom superlattices Physical Review B - Condensed Matter and Materials Physics. 58: R1742-R1745. DOI: 10.1103/Physrevb.58.R1742 |
0.301 |
|
1998 |
Degoli E, Ossicini S. First-principles optical properties of Si/CaF2 multiple quantum wells Physical Review B - Condensed Matter and Materials Physics. 57: 14776-14782. DOI: 10.1103/Physrevb.57.14776 |
0.481 |
|
1998 |
Degoli E, Ossicini S. Optical properties of Si/CaF2 superlattices Journal of Luminescence. 80: 411-415. DOI: 10.1016/S0022-2313(98)00139-2 |
0.512 |
|
1998 |
Ossicini S. Optical properties of confined Si structures Physica Status Solidi (a) Applied Research. 170: 377-390. DOI: 10.1002/(Sici)1521-396X(199812)170:2<377::Aid-Pssa377>3.0.Co;2-7 |
0.495 |
|
1998 |
Magri R, Ossicini S. Ab-initio investigation of the polarization anisotropy of the optical absorption in (InGa)As-Inp superlattices Physica Status Solidi (a) Applied Research. 170: 331-336. DOI: 10.1002/(Sici)1521-396X(199812)170:2<331::Aid-Pssa331>3.0.Co;2-A |
0.305 |
|
1997 |
Ossicini S, Bisi O. The optical transition in a Si wire passivated by H and O-H Solid State Phenomena. 54: 127-134. DOI: 10.4028/Www.Scientific.Net/Ssp.54.127 |
0.342 |
|
1997 |
Caldas MJ, Baierle RJ, Molinari E, Ossicini S. Optically-induced defects in Si-H nanoparticles Materials Science Forum. 258: 11-18. DOI: 10.4028/Www.Scientific.Net/Msf.258-263.11 |
0.384 |
|
1997 |
Ossicini S, Bertoni CM, Biagini M, Lugli A, Roma G, Bisi O. Optical properties of isolated and interacting silicon quantum wires Thin Solid Films. 297: 154-162. DOI: 10.1016/S0040-6090(96)09442-4 |
0.505 |
|
1997 |
Baierle RJ, Caldas MJ, Molinari E, Ossicini S. Optical emission from small Si particles Solid State Communications. 102: 545-549. DOI: 10.1016/S0038-1098(97)00042-2 |
0.458 |
|
1996 |
Dorigoni L, Bisi O, Bernardini F, Ossicini S. Electron states and luminescence transition in porous silicon. Physical Review. B, Condensed Matter. 53: 4557-4564. PMID 9984013 DOI: 10.1103/Physrevb.53.4557 |
0.523 |
|
1996 |
Ossicini S, Biagini M, Bertoni CM, Roma G, Bisi O. Ab-Initio Calculation of the Optical Properties of Silicon Quantum Wires Mrs Proceedings. 452. DOI: 10.1557/Proc-452-63 |
0.51 |
|
1996 |
Ossicini S, Dorigoni L, Bisi O. Luminescence in porous silicon: The role of confinement and passivation Applied Surface Science. 102: 395-398. DOI: 10.1016/0169-4332(96)00085-2 |
0.51 |
|
1996 |
Dorigoni L, Bisi O, Bernardini F, Ossicini S. The luminescence transition in porous silicon: The nature of the electronic states Thin Solid Films. 276: 261-264. DOI: 10.1016/0040-6090(95)08091-0 |
0.486 |
|
1996 |
Dorigoni L, Pavesi L, Bisi O, Calliari L, Anderle M, Ossicini S. Auger lineshape analysis of porous silicon: Experiment and theory Thin Solid Films. 276: 244-247. DOI: 10.1016/0040-6090(95)08063-5 |
0.514 |
|
1996 |
Said M, Bertoni CM, Fasolino A, Ossicini S. Electronic structure of rare earth arsenide/gallium arsenide superlattices Solid State Communications. 100: 477-480. DOI: 10.1016/0038-1098(96)00453-X |
0.429 |
|
1996 |
Ossicini S, Bisi O. The optical transition in porous Si: The effects of quantum confinement, surface states and hydrogen passivation Il Nuovo Cimento D. 18: 1121-1129. DOI: 10.1007/Bf02464690 |
0.5 |
|
1995 |
Biagini M, Calandra C, Ossicini S. Electronic structure of PrBa2Cu3O7: A local-spin-density approximation with on-site Coulomb interaction. Physical Review. B, Condensed Matter. 52: 10468-10473. PMID 9980100 DOI: 10.1103/Physrevb.52.10468 |
0.301 |
|
1995 |
Biagini M, Calandra C, Ossicini S. Hole filling and interlayer coupling in ybascugoy/prbascugoy superlattices Epl. 31: 311-317. DOI: 10.1209/0295-5075/31/5-6/012 |
0.322 |
|
1995 |
Arnaud D’Avitaya F, Vervoort L, Bassani F, Ossicini S, Fasolino A, Bernardini F. Light emission at room temperature from si/caf2multilayers Epl. 31: 25-30. DOI: 10.1209/0295-5075/31/1/005 |
0.502 |
|
1995 |
Ossicini S, Fasolino A, Bernardini F. Si/CaF2 Superlattices. A Direct Gap Structure Due to Interface State Coupling Physica Status Solidi (B). 190: 117-122. DOI: 10.1002/Pssb.2221900118 |
0.49 |
|
1994 |
Manghi F, Calandra C, Ossicini S. Quasiparticle band structure of NiO: The Mott-Hubbard picture regained. Physical Review Letters. 73: 3129-3132. PMID 10057295 DOI: 10.1103/Physrevlett.73.3129 |
0.32 |
|
1994 |
Ossicini S, Fasolino A, Bernardini F. Gap opening in ultrathin Si layers: Role of confined and interface states. Physical Review Letters. 72: 1044-1047. PMID 10056603 DOI: 10.1103/Physrevlett.72.1044 |
0.408 |
|
1994 |
Bernardini F, Ossicini S, Fasolino A. First-principles investigation of the electronic structure of Si-based layered structures Surface Science. 307: 984-988. DOI: 10.1016/0039-6028(94)91528-8 |
0.481 |
|
1994 |
Fasolino A, Ossicini S, Bernardini F. Electronic structure of thin Si layers in CaF2: Hybridization versus confinement Solid State Electronics. 37: 1145-1147. DOI: 10.1016/0038-1101(94)90375-1 |
0.499 |
|
1992 |
Ossicini S. Theoretical approaches to the Schottky barrier problem Applied Surface Science. 56: 290-300. DOI: 10.1016/0169-4332(92)90247-U |
0.381 |
|
1992 |
Buongiorno Nardelli M, Finocchi F, Palummo M, Di Felice R, Bertoni CM, Bernardini F, Ossicini S. Hydrogen covered Si(111) surfaces Surface Science. 269: 879-885. DOI: 10.1016/0039-6028(92)91364-H |
0.398 |
|
1992 |
Arcangeli C, Ossicini S, Bisi O. The electronic properties of the CaF2Si(111) system: from monolayer coverage to solid-solid interface Surface Science. 269: 743-747. DOI: 10.1016/0039-6028(92)91343-A |
0.458 |
|
1992 |
Ossicini S, Bernardini F. Fermi-level pinning and interface states at PbSi(111) interface Solid State Communications. 82: 863-866. DOI: 10.1016/0038-1098(92)90709-I |
0.375 |
|
1991 |
Ossicini S, Arcangeli C, Bisi O. Chemical bond and electronic states at the CaF2-Si(111) and Ca-Si(111) interfaces. Physical Review. B, Condensed Matter. 43: 9823-9830. PMID 9996684 DOI: 10.1103/Physrevb.43.9823 |
0.415 |
|
1991 |
Ossicini S, Arcangeli C, Bisi O. Initial formation of the CaF2 interface: a theoretical study Surface Science. 251: 462-466. DOI: 10.1016/0039-6028(91)91035-V |
0.439 |
|
1990 |
Ossicini S, Bisi O, Bertoni CM. Electronic structure of Si(111)-NiSi2(111) A-type and B-type interfaces. Physical Review. B, Condensed Matter. 42: 5735-5743. PMID 9996159 DOI: 10.1103/Physrevb.42.5735 |
0.487 |
|
1990 |
Ossicini S, Arcangeli C, Bisi O. Covalency in the adsorption of Na on Si(111). Physical Review. B, Condensed Matter. 42: 7671-7674. PMID 9994925 DOI: 10.1103/Physrevb.42.7671 |
0.352 |
|
1990 |
Ossicini S, Bisi O, Bertoni CM. The electronic properties of Si{single bond}NiSi2(111) epitaxial interfaces Vacuum. 41: 681-683. DOI: 10.1016/0042-207X(90)90449-9 |
0.491 |
|
1990 |
Finocchi F, Bertoni CM, Ossicini S. Simple metal surfaces and image potential states Vacuum. 41: 535-537. DOI: 10.1016/0042-207X(90)90408-Q |
0.301 |
|
1989 |
Ossicini S, Bisi O. Selfconsistent LMTO calculation for semiconductor clean surfaces Surface Science. 211: 572-577. DOI: 10.1016/0039-6028(89)90816-9 |
0.456 |
|
1987 |
Ossicini S, Bisi O. The Electronic Properties of Silicon-Silicide Epitaxial Interfaces Mrs Proceedings. 102. DOI: 10.1557/Proc-102-315 |
0.464 |
|
1987 |
Ossicini S, Bertoni CM. Image potential at metal surfaces Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 5: 727-730. DOI: 10.1116/1.574285 |
0.331 |
|
1987 |
Ossicini S, Finocchi F, Bertoni CM. Electron density profiles at charged metal surfaces in the weighted density approximation Surface Science. 189: 776-781. DOI: 10.1016/S0039-6028(87)80513-7 |
0.337 |
|
1987 |
Bisi O, Ossicini S. First principle investigation of the electronic properties of silicon-silicide interfaces Surface Science. 189: 285-293. DOI: 10.1016/S0039-6028(87)80444-2 |
0.444 |
|
1986 |
Ossicini S. Interaction potential between rare-gas atoms and metal surfaces. Physical Review. B, Condensed Matter. 33: 873-878. PMID 9938346 DOI: 10.1103/Physrevb.33.873 |
0.315 |
|
1986 |
Ossicini S, Gies P, Bertoni CM. Image plane for surface potential Epl. 1: 661-667. DOI: 10.1209/0295-5075/1/12/008 |
0.339 |
|
1986 |
Ossicini S, Bertoni CM, Gies P. Non-local exchange and correlation in the jellium model of surfaces Surface Science. 178: 244-255. DOI: 10.1016/0039-6028(86)90299-2 |
0.363 |
|
1985 |
Ossicini S, Bertoni CM. Density-functional calculation of atomic structure with nonlocal exchange and correlation. Physical Review. A. 31: 3550-3556. PMID 9895930 DOI: 10.1103/Physreva.31.3550 |
0.332 |
|
1985 |
Ossicini S. Self-trapped exciton bubble size growth in solid neon Journal of Physics and Chemistry of Solids. 46: 123-126. DOI: 10.1016/0022-3697(85)90206-9 |
0.36 |
|
1981 |
Ossicini S, Forstmann F. Matrix effects in the optical spectra of alkali atoms trapped in Ar, Kr, and Xe matrices: A pseudopotential calculation The Journal of Chemical Physics. 75: 2076-2079. DOI: 10.1063/1.442327 |
0.335 |
|
1980 |
Forstmann F, Ossicini S. The influence of a rare-gas matrix on the electronic levels of isolated atoms The Journal of Chemical Physics. 73: 5997-6002. DOI: 10.1063/1.440133 |
0.339 |
|
1979 |
Casula F, Ossicini S, Selloni A. Electronic structure of the (111) ideal and relaxed surface of silicon by the chemical pseudopotential method Solid State Communications. 30: 309-313. DOI: 10.1016/0038-1098(79)90083-8 |
0.434 |
|
1978 |
Casula F, Ossicini S, Selloni A. Electronic vacancy states in silicon by the chemical pseudopotential method Solid State Communications. 28: 141-145. DOI: 10.1016/0038-1098(78)90345-9 |
0.44 |
|
1977 |
Selloni A, Ossicini S, Tosatti E. Chemical pseudopotential and semiconductor surface states Il Nuovo Cimento B Series 11. 39: 786-790. DOI: 10.1007/Bf02725824 |
0.366 |
|
Show low-probability matches. |