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Wei Kong - Publications

Affiliations: 
Electrical and Computer Engineering Duke University, Durham, NC 
Website:
https://meche.mit.edu/people/staff/weikong@mit.edu
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12 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Bae SH, Lu K, Han Y, Kim S, Qiao K, Choi C, Nie Y, Kim H, Kum HS, Chen P, Kong W, Kang BS, Kim C, Lee J, Baek Y, et al. Graphene-assisted spontaneous relaxation towards dislocation-free heteroepitaxy. Nature Nanotechnology. PMID 32042164 DOI: 10.1038/S41565-020-0633-5  0.337
2018 Collar KN, Li J, Jiao W, Kong W, Brown AS. Unidirectional lateral nanowire formation during the epitaxial growth of GaAsBi on vicinal substrates. Nanotechnology. 29: 035604. PMID 29186010 DOI: 10.1088/1361-6528/Aa9E34  0.644
2017 Kim Y, Cruz SS, Lee K, Alawode BO, Choi C, Song Y, Johnson JM, Heidelberger C, Kong W, Choi S, Qiao K, Almansouri I, Fitzgerald EA, Kong J, Kolpak AM, et al. Remote epitaxy through graphene enables two-dimensional material-based layer transfer. Nature. 544: 340-343. PMID 28426001 DOI: 10.1038/Nature22053  0.335
2017 Kong W, Roberts AT, Jiao WY, Fournelle J, Kim TH, Losurdo M, Everitt HO, Brown AS. UVB-emitting InAlGaN multiple quantum well synthesized using plasma-assisted molecular beam epitaxy Aip Advances. 7: 035109. DOI: 10.1063/1.4973637  0.659
2016 Li J, Collar K, Jiao W, Kong W, Kuech TF, Babcock SE, Brown A. Impact of vicinal GaAs(001) substrates on Bi incorporation and photoluminescence in molecular beam epitaxy-grown GaAs1-xBix Applied Physics Letters. 108. DOI: 10.1063/1.4953408  0.647
2015 Kong W, Roberts AT, Jiao WY, Fournelle J, Kim TH, Losurdo M, Everitt HO, Brown AS. Room temperature Ultraviolet B emission from InAlGaN films synthesized by plasma-assisted molecular beam epitaxy Applied Physics Letters. 107. DOI: 10.1063/1.4931942  0.666
2015 Kong W, Jiao WY, Li JC, Collar K, Kim TH, Leach JH, Brown AS. Effect of strain in sputtered AlN buffer layers on the growth of GaN by molecular beam epitaxy Applied Physics Letters. 107. DOI: 10.1063/1.4927245  0.669
2015 Li J, Forghani K, Guan Y, Jiao W, Kong W, Collar K, Kim TH, Kuech TF, Brown AS. GaAs1-yBiy Raman signatures: Illuminating relationships between the electrical and optical properties of GaAs1-yBiy and Bi incorporation Aip Advances. 5. DOI: 10.1063/1.4922139  0.629
2015 Kong W, Jiao WY, Li JC, Collar K, Leach JH, Fournelle, Kim TH, Brown AS. Structural Characterization of the Nanocolumnar Microstructure of InAlN Journal of Electronic Materials. DOI: 10.1007/S11664-015-4167-9  0.383
2014 Kong W, Mohanta A, Roberts AT, Jiao WY, Fournelle J, Kim TH, Losurdo M, Everitt HO, Brown AS. Room temperature photoluminescence from InxAl(1-x)N films deposited by plasma-assisted molecular beam epitaxy Applied Physics Letters. 105. DOI: 10.1063/1.4896849  0.558
2014 Li J, Kim TH, Forghani K, Jiao W, Kong W, Collar K, Kuech TF, Brown AS. Growth of GaAs1-xBix by molecular beam epitaxy: Trade-offs in optical and structural characteristics Journal of Applied Physics. 116. DOI: 10.1063/1.4891874  0.553
2014 Zhong M, Roberts J, Kong W, Brown AS, Steckl AJ. P-type GaN grown by phase shift epitaxy Applied Physics Letters. 104. DOI: 10.1063/1.4861058  0.501
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