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Xiabing Lou - Publications

Affiliations: 
Harvard University, Cambridge, MA, United States 
Area:
Chemistry, Material, thin film deposition
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13 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Lou X, Gong X, Kim SB, Gordon RG. Epitaxial growth of MgxCa1−xO on 4H–SiC(0001) and β-Ga2O3 wide band gap semiconductors with atomic layer deposition Journal of Materials Research. 35: 831-839. DOI: 10.1557/Jmr.2019.376  0.548
2019 Lou X, Gong X, Feng J, Gordon RG. Band offset analysis of ALD La2O3 on GaAs (111), (110) and (100) surfaces for epitaxial growth. Acs Applied Materials & Interfaces. PMID 31294539 DOI: 10.1021/Acsami.9B08436  0.521
2019 Yang C, Zhao X, Kim SB, Schelhas LT, Lou X, G. Gordon R. Atomic layer deposition of cubic tin–calcium sulfide alloy films Journal of Materials Research. 35: 795-803. DOI: 10.1557/Jmr.2019.337  0.391
2018 Bhuiyan MA, Zhou H, Chang S, Lou X, Gong X, Jiang R, Gong H, Zhang EX, Won C, Lim J, Lee J, Gordon RG, Reed RA, Fleetwood DM, Ye P, et al. Total-Ionizing-Dose Responses of GaN-Based HEMTs With Different Channel Thicknesses and MOSHEMTs With Epitaxial MgCaO as Gate Dielectric Ieee Transactions On Nuclear Science. 65: 46-52. DOI: 10.1109/Tns.2017.2774928  0.525
2017 Feng J, Gong X, Lou X, Gordon RG. Direct-liquid-evaporation Chemical Vapor Deposition of Nanocrystalline Cobalt Metal for Nanoscale Copper Interconnect Encapsulation. Acs Applied Materials & Interfaces. PMID 28266209 DOI: 10.1021/Acsami.7B01327  0.491
2017 Ren S, Bhuiyan MA, Zhang J, Lou X, Si M, Gong X, Jiang R, Ni K, Wan X, Zhang EX, Gordon RG, Reed RA, Fleetwood DM, Ye P, Ma TP. Total Ionizing Dose (TID) Effects in GaAs MOSFETs With La-Based Epitaxial Gate Dielectrics Ieee Transactions On Nuclear Science. 64: 164-169. DOI: 10.1109/Tns.2016.2620993  0.557
2017 Zhou H, Lou X, Sutherlin K, Summers J, Kim SB, Chabak KD, Gordon RG, Ye PD. DC and RF Performance of AlGaN/GaN/SiC MOSHEMTs With Deep Sub-Micron T-Gates and Atomic Layer Epitaxy MgCaO as Gate Dielectric Ieee Electron Device Letters. 38: 1409-1412. DOI: 10.1109/Led.2017.2746338  0.591
2017 Zhou H, Lou X, Kim SB, Chabak KD, Gordon RG, Ye PD. Enhancement-Mode AlGaN/GaN Fin-MOSHEMTs on Si Substrate With Atomic Layer Epitaxy MgCaO Ieee Electron Device Letters. 38: 1294-1297. DOI: 10.1109/Led.2017.2731993  0.598
2016 Lou X, Zhou H, Kim SB, Alghamdi S, Gong X, Feng J, Wang X, Ye PD, Gordon RG. Epitaxial Growth of MgxCa1-xO on GaN by Atomic Layer Deposition. Nano Letters. 16: 7650-7654. PMID 27960444 DOI: 10.1021/Acs.Nanolett.6B03638  0.636
2016 Kim SB, Yang C, Powers T, Davis LM, Lou X, Gordon RG. Synthesis of Calcium(II) Amidinate Precursors for Atomic Layer Deposition through a Redox Reaction between Calcium and Amidines. Angewandte Chemie (International Ed. in English). PMID 27351794 DOI: 10.1002/Anie.201602406  0.453
2016 Zhou H, Lou X, Conrad NJ, Si M, Wu H, Alghamdi S, Guo S, Gordon RG, Ye PD. High-Performance InAlN/GaN MOSHEMTs Enabled by Atomic Layer Epitaxy MgCaO as Gate Dielectric Ieee Electron Device Letters. 37: 556-559. DOI: 10.1109/Led.2016.2537198  0.603
2015 Zhang J, Lou X, Si M, Wu H, Shao J, Manfra MJ, Gordon RG, Ye PD. Inversion-mode GaAs wave-shaped field-effect transistor on GaAs (100) substrate Applied Physics Letters. 106. DOI: 10.1063/1.4913431  0.55
2012 Wang X, Saadat OI, Xi B, Lou X, Molnar RJ, Palacios T, Gordon RG. Atomic layer deposition of Sc2O3 for passivating AlGaN/GaN high electron mobility transistor devices Applied Physics Letters. 101. DOI: 10.1063/1.4770071  0.644
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