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Masahiro Watanabe, Ph.D. - Publications

Affiliations: 
2001 Colorado State University, Fort Collins, CO 
Area:
Electronics and Electrical Engineering, Fluid and Plasma Physics
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55 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Kumagai Y, Fukuyama S, Tonegawa H, Mikami K, Hirose K, Tomizawa K, Ichikawa K, Watanabe M. Negative differential resistance of CaF2/Si double barrier resonant tunneling diodes fabricated using plasma etching mesa isolation process Japanese Journal of Applied Physics. 59. DOI: 10.35848/1347-4065/Ab82A8  0.397
2020 Takeuchi K, Fukui M, Saraya T, Itou K, Takakura T, Suzuki S, Numasawa Y, Shigyo N, Kakushima K, Hoshii T, Furukawa K, Watanabe M, Wakabayashi H, Tsutsui K, Iwai H, et al. Bipolar Transistor Test Structures for Extracting Minority Carrier Lifetime in IGBTs Ieee Transactions On Semiconductor Manufacturing. 33: 159-165. DOI: 10.1109/Tsm.2020.2972369  0.316
2016 Kuwata Y, Suda K, Watanabe M. Resistance switching memory characteristics of CaF2/Si/CaF2 resonant-tunneling quantum-well heterostructures sandwiched by nanocrystalline Si secondary barrier layers Applied Physics Express. 9: 74001. DOI: 10.7567/Apex.9.074001  0.388
2015 Suda K, Kuwata Y, Watanabe M. Analysis of single- and double-barrier tunneling diode structures using ultrathin CaF2/CdF2/Si multilayered heterostructures grown on Si Japanese Journal of Applied Physics. 54. DOI: 10.7567/Jjap.54.04Dj05  0.384
2014 Denda J, Uryu K, Suda K, Watanabe M. Resistance switching memory characteristics of Si/CaF2/CdF2/CaF2/Si resonant-tunneling quantum-well structures Applied Physics Express. 7: 44103. DOI: 10.7567/Apex.7.044103  0.385
2013 Denda J, Uryu K, Watanabe M. Resistance Switching Memory Characteristics of Si/CaF2/CdF2Quantum-Well Structures Grown on Metal (CoSi2) Layer Japanese Journal of Applied Physics. 52. DOI: 10.7567/Jjap.52.04Cj07  0.43
2007 Kanazawa T, Morosawa A, Fujii R, Wada T, Suzuki Y, Watanabe M, Asada M. Suppression of Leakage Current of CdF2/CaF2 Resonant Tunneling Diode Structures Grown on Si(100) Substrates by Nanoarea Local Epitaxy Japanese Journal of Applied Physics. 46: 3388-3390. DOI: 10.1143/Jjap.46.3388  0.454
2007 Kanazawa T, Fujii R, Wada T, Suzuki Y, Watanabe M, Asada M. Room temperature negative differential resistance of CdF2∕CaF2 double-barrier resonant tunneling diode structures grown on Si(100) substrates Applied Physics Letters. 90: 92101. DOI: 10.1063/1.2709508  0.422
2006 Jinen K, Uchida K, Kodaira S, Watanabe M, Asada M. Improvement of electroluminescence from CdF2/CaF2 intersubband transition light-emitting structure by trench patterning and hydrogen annealing of Si substrate Ieice Electronics Express. 3: 493-498. DOI: 10.1587/Elex.3.493  0.354
2006 Jinen K, Kikuchi T, Watanabe M, Asada M. Room-Temperature Electroluminescence from Single-Period (CdF2/CaF2) Inter-Subband Quantum Cascade Structure on Si substrate Japanese Journal of Applied Physics. 45: 3656-3658. DOI: 10.1143/Jjap.45.3656  0.421
2005 Jinen K, Kikuchi T, Watanabe M, Asada M. Room Temperature Electroluminescence of CdF2/CaF2 Inter-subband Transition Laser Structures grown on Si Substrate The Japan Society of Applied Physics. 2005: 412-413. DOI: 10.7567/Ssdm.2005.G-4-3  0.36
2005 Kanazawa T, Morosawa A, Watanabe M, Asada M. High Peak-to-Valley Current Ratio of CdF2/CaF2 Resonant Tunneling Diode grown on Si(100) substrates by Nanoarea Local Epitaxy The Japan Society of Applied Physics. 2005: 162-163. DOI: 10.7567/Ssdm.2005.G-1-7  0.396
2005 Yokoyama T, Niiyama Y, Murata T, Watanabe M. Improvement of Crystalline Quality of BeZnSe Using Buffer Layer by Migration Enhanced Epitaxy on GaP(001) Substrate Japanese Journal of Applied Physics. 44: 75-77. DOI: 10.1143/Jjap.44.L75  0.38
2005 Niiyama Y, Watanabe M. BeMgZnSe-based ultraviolet lasers Semiconductor Science and Technology. 20: 1187-1197. DOI: 10.1088/0268-1242/20/12/008  0.376
2004 Niiyama Y, Yokoyama T, Watanabe M. Epitaxial growth and optical properties for ultraviolet regionof BeMgZnSe on GaP(001) substrate Physica Status Solidi B-Basic Solid State Physics. 241: 479-482. DOI: 10.1002/Pssb.200304158  0.354
2003 Niiyama Y, Yokoyama T, Watanabe M. Effect of Buffer Layer on Epitaxial Growth of High-Magnesium-Content BeMgZnSe Lattice Matched to GaP(001) Substrate Japanese Journal of Applied Physics. 42. DOI: 10.1143/Jjap.42.L599  0.331
2002 Maruyama T, Nakamura N, Watanabe M. Epitaxial growth of BeZnSe on CaF2/Si(111) substrate Japanese Journal of Applied Physics. 41: 876. DOI: 10.1143/Jjap.41.L876  0.396
2002 Niiyama Y, Maruyama T, Nakamura N, Watanabe M. Room-Temperature Ultraviolet Photoluminescence of BeZnSe on GaP(001) Japanese Journal of Applied Physics. 41. DOI: 10.1143/Jjap.41.L751  0.349
2000 Watanabe M, Iketani Y, Asada M. Epitaxial Growth and Electrical Characteristics of CaF2/Si/CaF2 Resonant Tunneling Diode Structures Grown on Si(111) 1°-off Substrate Japanese Journal of Applied Physics. 39. DOI: 10.1143/Jjap.39.L964  0.464
2000 Watanabe M, Funayama T, Teraji T, Sakamaki N. CaF2/CdF2 Double-Barrier Resonant Tunneling Diode with High Room-Temperature Peak-to-Valley Ratio Japanese Journal of Applied Physics. 39: 716. DOI: 10.1143/Jjap.39.L716  0.419
2000 Watanabe M, Maeda Y, Okano S. Epitaxial Growth and Ultraviolet Photoluminescence of CaF 2/ZnO/CaF 2 Heterostructures on Si(111) Japanese Journal of Applied Physics. 39. DOI: 10.1143/Jjap.39.L500  0.428
2000 Maruyama T, Nakamura N, Watanabe M. Improvement of the Visible Electroluminescence from Nanocrystalline Silicon Embedded in CaF2 on Si(111) Substrate Prepared by Rapid Thermal Annealing Japanese Journal of Applied Physics. 39: 1996-2000. DOI: 10.1143/Jjap.39.1996  0.418
1999 Maruyama T, Nakamura N, Watanabe M. Visible Electroluminescence from Silicon Nanocrystals Embedded in CaF2 Epilayers on Si(111) with Rapid Thermal Anneal The Japan Society of Applied Physics. 1999: 426-427. DOI: 10.7567/Ssdm.1999.D-11-1  0.367
1999 Tsutsui M, Watanabe M, Asada M. Resonant Tunneling Diodes in Si/CaF 2 Heterostructures Grown by Molecular Beam Epitaxy Japanese Journal of Applied Physics. 38. DOI: 10.1143/Jjap.38.L920  0.453
1999 Maruyama T, Nakamura N, Watanabe M. Visible Electroluminescence from Nanocrystalline Silicon Embedded in Single-Crystalline CaF 2/Si(111) with Rapid Thermal Anneal Japanese Journal of Applied Physics. 38. DOI: 10.1143/Jjap.38.L904  0.412
1999 Watanabe M, Aoki Y, Saito W, Tsuganezawa M. Negative Differential Resistance of CaF 2/CdF 2 Triple-Barrier Resonant-Tunneling Diode on Si(111) Grown by Partially Ionized Beam Epitaxy Japanese Journal of Applied Physics. 38. DOI: 10.1143/Jjap.38.L116  0.473
1999 Shaw DM, Watanabe M, Collins GJ, Sugai H. A Radio Frequency Driven DC Electron Beam Source Japanese Journal of Applied Physics. 38: 4590-4594. DOI: 10.1143/Jjap.38.4590  0.654
1999 Lloyd S, Shaw DM, Watanabe M, Collins GJ. Ferrite Core Effects in a 13.56 MHz Inductively Coupled Plasma Japanese Journal of Applied Physics. 38: 4275-4279. DOI: 10.1143/Jjap.38.4275  0.633
1999 Kikegawa N, Zhang B, Ikeda Y, Sakai N, Furuya K, Asada M, Watanabe M, Saito W. Shortening of Detection Time for Observation of Hot Electron Spatial Distribution by Scanning Hot Electron Microscopy Japanese Journal of Applied Physics. 38: 2108-2113. DOI: 10.1143/Jjap.38.2108  0.309
1998 Watanabe M, Matsunuma T, Maruyama T, Maeda Y. Electroluminescence of Nanocrystal Si Embedded in Single-Crystal CaF 2/Si(111) Japanese Journal of Applied Physics. 37. DOI: 10.1143/Jjap.37.L591  0.391
1998 Kojima T, Jia X, Hayafune Y, Tamura S, Watanabe M, Arai S. Size Fluctuation Of 50 Nm Periodic Gainasp/Inp Wire Structure By Electron Beam Lithography And Wet Chemical Etching Japanese Journal of Applied Physics. 37: 5961-5962. DOI: 10.1143/Jjap.37.5961  0.354
1998 Watanabe M, Saitoh W, Aoki Y, Nishiyama J. Epitaxial growth of nanometer-thick CaF2/CdF2 heterostructures using partially ionized beam epitaxy Solid-State Electronics. 42: 1627-1630. DOI: 10.1016/S0038-1101(98)00083-5  0.426
1998 Watanabe M, Maruyama T, Ikeda S. Light emission from Si nanocrystals embedded in CaF2 epilayers on Si(1 1 1): Effect of rapid thermal annealing Journal of Luminescence. 80: 253-256. DOI: 10.1016/S0022-2313(98)00107-0  0.383
1997 Saitoh W, Mori K, Sugiura H, Maruyama T, Watanabe M, Asada M. Reduction of Electrical Resistance of Nanometer-Thick CoSi 2 Film on CaF 2 by Pseudomorphic Growth of CaF 2 on Si(111) Japanese Journal of Applied Physics. 36: 4470-4471. DOI: 10.1143/Jjap.36.4470  0.335
1996 Asada M, Watanabe M, Saitoh W, Mori K, Kohno Y. Quantum-Effect Electron Devices Using Metal/Insulator Nanostructures The Japan Society of Applied Physics. 1996: 169-171. DOI: 10.7567/Ssdm.1996.Sympo.Iv-1  0.315
1996 Saitoh W, Yamazaki K, Asada M, Watanabe M. Proposal and Analysis of Very Short Channel Field Effect Transistor Using Vertical Tunneling with New Heterostructures on Silicon Japanese Journal of Applied Physics. 35. DOI: 10.1143/Jjap.35.L1104  0.325
1996 Vázquez F, Kobayashi D, Kobayashi I, Miyamoto Y, Furuya K, Maruyama T, Watanabe M, Asada M. Detection of hot electron current with scanning hot electron microscopy Applied Physics Letters. 69: 2196-2198. DOI: 10.1063/1.117163  0.357
1996 Mori K, Saitoh W, Suemasu T, Kohno Y, Watanabe M, Asada M. Room-temperature observation of multiple negative differential resistance in a metal (CoSi2)/insulator (CaF2) quantum interference transistor structure Physica B-Condensed Matter. 227: 213-215. DOI: 10.1016/0921-4526(96)00402-4  0.376
1996 Suemasu T, Saitoh W, Khono Y, Mori K, Watanabe M, Asada M. Transfer efficiency of hot electrons in a metal (CoSi2)/insulator (CaF2) quantum interference transistor Surface Science. 209-212. DOI: 10.1016/0039-6028(96)00386-X  0.322
1995 Saitoh W, Suemasu T, Kohno Y, Watanabe M, Asada M. Metal (CoSi2)/insulator (CaF2) hot electron transistor fabricated by electron-beam lithography on a Si substrate Japanese Journal of Applied Physics. 34. DOI: 10.1143/Jjap.34.L1254  0.448
1995 Saitoh W, Suemasu T, Kohno Y, Watanabe M, Asada M. Multiple Negative Differential Resistance due to Quantum Interference of Hot Electron Waves in Metal (CoSi2)/Insulator (CaF2) Heterostructures and Influence of Parasitic Circuit Elements. Japanese Journal of Applied Physics. 34: 4481-4484. DOI: 10.1143/Jjap.34.4481  0.403
1995 Watanabe M, Iizuka F, Asada M. Formation of silicon and cobalt silicide nanoparticles in Caf2 Japanese Journal of Applied Physics. 34: 4380-4383. DOI: 10.1143/Jjap.34.4380  0.372
1995 Asada M, Watanabe M, Suemasu T, Kohno Y, Saitoh W. Epitaxial growth of a metal(CoSi2)/insulator(CaF2) nanometer‐thick heterostructure and its application to quantum‐effect devices Journal of Vacuum Science and Technology. 13: 623-628. DOI: 10.1116/1.579796  0.456
1995 Suemasu T, Kohno Y, Saitoh W, Watanabe M, Asada M. Theoretical and measured characteristics of metal (CoSi/sub 2/)-insulator(CaF/sub 2/) resonant tunneling transistors and the influence of parasitic elements Ieee Transactions On Electron Devices. 42: 2203-2210. DOI: 10.1109/16.477780  0.353
1994 Suemasu T, Kohno Y, Saitoh W, Suzuki N, Watanabe M, Asada M. Quantum Interference Of Electron Wave In Metal (Cosi2)/Insulator (Caf2) Resonant Tunneling Hot Electron Transistor Structure Japanese Journal of Applied Physics. 33. DOI: 10.1143/Jjap.33.L1762  0.384
1994 Suemasu T, Watanabe M, Suzuki J, Kohno Y, Asada M, Suzuki N. Metal(CoSi2)/Insulator(CaF2) Resonant Tunneling Diode Japanese Journal of Applied Physics. 33: 57-65. DOI: 10.1143/Jjap.33.57  0.367
1993 Asada M, Watanabe M, Suemasu T, Suzuki N, Kohno Y. Metal/Insulator Heterostructure Quantum Devices on Si Substrate The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.1993.D-5-1  0.364
1993 Watanabe M, Suzuki N, Asada M. Reflection High-Energy Electron Diffraction Oscillation during CaF2Growth on Si(111) by Partially Ionized Beam Epitaxy Japanese Journal of Applied Physics. 32: 940-941. DOI: 10.1143/Jjap.32.940  0.407
1993 Watanabe M, Suemasu T, Muratake S, Asada M. Negative differential resistance of metal (CoSi2)/insulator (CaF2) triple‐barrier resonant tunneling diode Applied Physics Letters. 62: 300-302. DOI: 10.1063/1.108997  0.382
1992 Watanabe M, Muratake S, Fujimoto H, Sakamori S, Asada M, Arai S. Epitaxial growth of metal(Cosi2)/insulator(caf2) nanometer-thick layered structure on si(111) Japanese Journal of Applied Physics. 31: 116-118. DOI: 10.1143/Jjap.31.L116  0.431
1992 Suemasu T, Watanabe M, Muratake S, Asada M, Suzuki N. Negative differential resistance in metal (CoSi/sub 2/)/insulator (CaF/sub 2/) resonant tunneling diode Ieee Transactions On Electron Devices. 39: 2644. DOI: 10.1109/16.163494  0.345
1992 Suemasu T, Watanabe M, Asada M, Suzuki N. Room temperature negative differential resistance of metal (CoSi2)/insulator (CaF2) resonant tunnelling diode Electronics Letters. 28: 1432-1434. DOI: 10.1049/El:19920911  0.372
1992 Muratake S, Watanabe M, Suemasu T, Asada M. Transistor action of metal (CoSi/sub 2/)/insulator (CaF/sub 2/) hot electron transistor structure Electronics Letters. 28: 1002-1004. DOI: 10.1049/El:19920637  0.422
1992 Watanabe M, Muratake S, Suemasu T, Fujimoto H, Sakamori S, Asada M, Arai S. Epitaxial growth and electrical conductance of metal (CoSi 2 )/insulator(CaF 2 ) nanometer-thick layered structures on Si(111) Journal of Electronic Materials. 21: 783-789. DOI: 10.1007/Bf02665516  0.444
1990 Watanabe M, Muguruma H, Asada M, Arai S. Low Temperature (∼420°C) Epitaxial Growth of CaF2/Si(111) by Ionized-Cluster-Beam Technique Japanese Journal of Applied Physics. 29: 1803-1804. DOI: 10.1143/Jjap.29.1803  0.43
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