| Year |
Citation |
Score |
| 2018 |
Lee K, Liu ES, Watanabe K, Taniguchi T, Nah J. Interface States in Bilayer Graphene Encapsulated by Hexagonal Boron Nitride. Acs Applied Materials & Interfaces. PMID 30430825 DOI: 10.1021/Acsami.8B16625 |
0.693 |
|
| 2014 |
Dillen DC, Kim K, Liu ES, Tutuc E. Radial modulation doping in core-shell nanowires. Nature Nanotechnology. 9: 116-20. PMID 24441982 DOI: 10.1038/Nnano.2013.301 |
0.71 |
|
| 2013 |
Liu E, Dillen DC, Nah J, Fallahazad B, Kim K, Tutuc E. Realization and Scaling of ${\rm Ge}{\hbox{--}}{\rm Si}_{1{\hbox{-}}{\rm x}}{\rm Ge}_{\rm x}$ Core-Shell Nanowire $n$-FETs Ieee Transactions On Electron Devices. 60: 4027-4033. DOI: 10.1109/Ted.2013.2285711 |
0.623 |
|
| 2010 |
Liu ES, Nah J, Varahramyan KM, Tutuc E. Lateral spin injection in germanium nanowires. Nano Letters. 10: 3297-301. PMID 20707379 DOI: 10.1021/Nl1008663 |
0.652 |
|
| 2010 |
Liu E, Jain N, Varahramyan KM, Nah J, Banerjee SK, Tutuc E. Role of Metal–Semiconductor Contact in Nanowire Field-Effect Transistors Ieee Transactions On Nanotechnology. 9: 237-242. DOI: 10.1109/Tnano.2009.2027119 |
0.726 |
|
| 2010 |
Nah J, Liu ES, Varahramyan KM, Tutuc E. Ge-SixGe1-x coreShell nanowire tunneling field-effect transistors Ieee Transactions On Electron Devices. 57: 1883-1888. DOI: 10.1109/Ted.2010.2051249 |
0.773 |
|
| 2010 |
Nah J, Liu ES, Varahramyan KM, Shahrjerdi D, Banerjee SK, Tutuc E. Scaling properties of Ge-SixGe1-x coreshell nanowire field-effect transistors Ieee Transactions On Electron Devices. 57: 491-495. DOI: 10.1109/Ted.2009.2037406 |
0.76 |
|
| 2010 |
Nah J, Liu E, Varahramyan KM, Dillen D, McCoy S, Chan J, Tutuc E. Enhanced-Performance Germanium Nanowire Tunneling Field-Effect Transistors Using Flash-Assisted Rapid Thermal Process Ieee Electron Device Letters. 31: 1359-1361. DOI: 10.1109/Led.2010.2072770 |
0.715 |
|
| 2009 |
Liu E, Kelly DQ, Donnelly JP, Tutuc E, Banerjee SK. Negative Differential Resistance in Buried-Channel $\hbox{Ge}_{x} \hbox{C}_{1 - x}$ pMOSFETs Ieee Electron Device Letters. 30: 136-138. DOI: 10.1109/Led.2008.2009364 |
0.499 |
|
| 2009 |
Nah J, Liu ES, Shahrjerdi D, Varahramyan KM, Banerjee SK, Tutuc E. Realization of dual-gated Ge- SixGe1-x core-shell nanowire field effect transistors with highly doped source and drain Applied Physics Letters. 94. DOI: 10.1063/1.3079410 |
0.72 |
|
| 2008 |
Nah J, Varahramyan K, Liu ES, Banerjee SK, Tutuc E. Doping of Ge- Six Ge1-x core-shell nanowires using low energy ion implantation Applied Physics Letters. 93. DOI: 10.1063/1.3013335 |
0.683 |
|
| 2008 |
Hsu S, Liu E, Chang Y, Hilfiker JN, Kim YD, Kim TJ, Lin C, Lin G. Characterization of Si nanorods by spectroscopic ellipsometry with efficient theoretical modeling Physica Status Solidi (a). 205: 876-879. DOI: 10.1002/Pssa.200777832 |
0.398 |
|
| 2007 |
Lin G, Chang Y, Liu E, Kuo H, Lin H. Low refractive index Si nanopillars on Si substrate Applied Physics Letters. 90: 181923. DOI: 10.1063/1.2736281 |
0.315 |
|
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