| Year |
Citation |
Score |
| 2023 |
Tom T, Ros E, López-Vidrier J, Asensi JM, Ortega P, Puigdollers J, Bertomeu J, Voz C. Poly(amidoamine) Dendrimer as an Interfacial Dipole Modification in Crystalline Silicon Solar Cells. The Journal of Physical Chemistry Letters. 4322-4326. PMID 37132594 DOI: 10.1021/acs.jpclett.3c00643 |
0.354 |
|
| 2023 |
Rovira D, Ros E, Tom T, Jiménez M, Miguel Asensi J, Voz C, López-Vidrier J, Puigdollers J, Bertomeu J, Saucedo E. Polymeric Interlayer in CdS-Free Electron-Selective Contact for SbSe Thin-Film Solar Cells. International Journal of Molecular Sciences. 24. PMID 36834505 DOI: 10.3390/ijms24043088 |
0.336 |
|
| 2021 |
Costals ER, Masmitjà G, Almache E, Pusay B, Tiwari K, Saucedo E, Raj CJ, Kim BC, Puigdollers J, Martin I, Voz C, Ortega P. Atomic layer deposition of vanadium oxide films for crystalline silicon solar cells. Materials Advances. 3: 337-345. PMID 35128416 DOI: 10.1039/d1ma00812a |
0.363 |
|
| 2021 |
Bujaldón R, Puigdollers J, Velasco D. Towards the Bisbenzothienocarbazole Core: A Route of Sulfurated Carbazole Derivatives with Assorted Optoelectronic Properties and Applications. Materials (Basel, Switzerland). 14. PMID 34201516 DOI: 10.3390/ma14133487 |
0.311 |
|
| 2020 |
Tom T, Ros E, López-Pintó N, Miguel Asensi J, Andreu J, Bertomeu J, Puigdollers J, Voz C. Influence of Co-Sputtered Ag:Al Ultra-Thin Layers in Transparent VO/Ag:Al/AZO Hole-Selective Electrodes for Silicon Solar Cells. Materials (Basel, Switzerland). 13. PMID 33142888 DOI: 10.3390/ma13214905 |
0.334 |
|
| 2020 |
Becerril-Romero I, Sylla D, Placidi M, Sánchez Y, Andrade-Arvizu J, Izquierdo-Roca V, Guc M, Pérez-Rodríguez A, Grini S, Vines L, Pusay B, Almache R, Puigdollers J, Pistor P, Saucedo E, et al. Transition-Metal Oxides for Kesterite Solar Cells Developed on Transparent Substrates. Acs Applied Materials & Interfaces. PMID 32608962 DOI: 10.1021/Acsami.0C06992 |
0.426 |
|
| 2020 |
Ortega PR, Pinol JM, Martin I, Orpella A, Masmitja G, Lopez G, Ros E, Voz C, Puigdollers J, Alcubilla R. Low-Cost High-Sensitive Suns– $V_{\text{oc}}$ Measurement Instrument to Characterize c-Si Solar Cells Ieee Transactions On Instrumentation and Measurement. 69: 6429-6435. DOI: 10.1109/Tim.2020.2967136 |
0.318 |
|
| 2020 |
Mahato S, Puigdollers J, Voz C, Mukhopadhyay M, Mukherjee M, Hazra S. Near 5% DMSO is the best: A structural investigation of PEDOT: PSS thin films with strong emphasis on surface and interface for hybrid solar cell Applied Surface Science. 499: 143967. DOI: 10.1016/J.Apsusc.2019.143967 |
0.468 |
|
| 2019 |
Nguyen HT, Ros E, Tom T, Bertomeu J, Asensi JM, Andreu J, Garcia IM, Ortega P, Garin M, Puigdollers J, Voz C, Alcubilla R. Influence of a Gold Seed in Transparent V 2 O x /Ag/V 2 O x Selective Contacts for Dopant-Free Silicon Solar Cells Ieee Journal of Photovoltaics. 9: 72-77. DOI: 10.1109/Jphotov.2018.2875876 |
0.406 |
|
| 2019 |
Simokaitiene J, Cekaviciute M, Volyniuk D, Sini G, Voz C, Puigdollers J, Bucinskas A, Grazulevicius JV. Satisfying both interfacial- and bulk requirements for organic photovoltaics: Bridged-triphenylamines with extended π-conjugated systems as efficient new molecules Organic Electronics. 73: 137-145. DOI: 10.1016/J.Orgel.2019.05.053 |
0.403 |
|
| 2018 |
Reig M, Bagdziunas G, Ramanavicius A, Puigdollers J, Velasco D. Interface engineering and solid-state organization for triindole-based p-type organic thin-film transistors. Physical Chemistry Chemical Physics : Pccp. 20: 17889-17898. PMID 29926056 DOI: 10.1039/C8Cp02963F |
0.51 |
|
| 2018 |
Campos A, Riera-Galindo S, Puigdollers J, Mas-Torrent M. Reduction of Charge Traps and Stability Enhancement in Solution-Processed Organic Field-Effect Transistors Based on a Blended n-Type Semiconductor. Acs Applied Materials & Interfaces. 10: 15952-15961. PMID 29671315 DOI: 10.1021/Acsami.8B02851 |
0.711 |
|
| 2018 |
Reig M, Puigdollers J, Velasco D. Solid-state organization of n-type carbazole-based semiconductors for organic thin-film transistors. Physical Chemistry Chemical Physics : Pccp. 20: 1142-1149. PMID 29239425 DOI: 10.1039/C7Cp05135B |
0.419 |
|
| 2018 |
Arfaoui N, Boukhili W, Mahdouani M, Puigdollers J, Bourguiga R. Static and dynamic modeling of organic thin film transistors: effect of channel length on the Mayer-Neldel rule energy and quasistatic capacitances European Physical Journal-Applied Physics. 81: 30202. DOI: 10.1051/Epjap/2018170384 |
0.369 |
|
| 2018 |
Masmitjà G, Ortega P, Puigdollers J, Gerling LG, Martín I, Voz C, Alcubilla R. Interdigitated back-contacted crystalline silicon solar cells with low-temperature dopant-free selective contacts Journal of Materials Chemistry. 6: 3977-3985. DOI: 10.1039/C7Ta11308K |
0.466 |
|
| 2018 |
García-Hernansanz R, García-Hemme E, Montero D, Olea J, Prado Ad, Mártil I, Voz C, Gerling LG, Puigdollers J, Alcubilla R. Transport mechanisms in silicon heterojunction solar cells with molybdenum oxide as a hole transport layer Solar Energy Materials and Solar Cells. 185: 61-65. DOI: 10.1016/J.Solmat.2018.05.019 |
0.437 |
|
| 2018 |
Mahato S, Puigdollers J. Temperature dependent current-voltage characteristics of Au/n-Si Schottky barrier diodes and the effect of transition metal oxides as an interface layer Physica B-Condensed Matter. 530: 327-335. DOI: 10.1016/J.Physb.2017.10.068 |
0.38 |
|
| 2018 |
Cuadrado A, Cuesta J, Puigdollers J, Velasco D. Air stable organic semiconductors based on diindolo[3,2-a:3′,2′-c]carbazole Organic Electronics. 62: 35-42. DOI: 10.1016/J.Orgel.2018.07.004 |
0.452 |
|
| 2017 |
Gerling LG, Voz C, Alcubilla R, Puigdollers J. Origin of passivation in hole-selective transition metal oxides for crystalline silicon heterojunction solar cells Journal of Materials Research. 32: 260-268. DOI: 10.1557/Jmr.2016.453 |
0.43 |
|
| 2017 |
Mahato S, Biswas D, Gerling LG, Voz C, Puigdollers J. Analysis of temperature dependent current-voltage and capacitance-voltage characteristics of an Au/V2O5/n-Si Schottky diode Aip Advances. 7: 85313. DOI: 10.1063/1.4993553 |
0.395 |
|
| 2017 |
Masmitjà G, Gerling LG, Ortega P, Puigdollers J, Martín I, Voz C, Alcubilla R. V2Ox-based hole-selective contacts for c-Si interdigitated back-contacted solar cells Journal of Materials Chemistry. 5: 9182-9189. DOI: 10.1039/C7Ta01959A |
0.424 |
|
| 2017 |
John KA, Thankamoniamma M, Puigdollers J, Anuroop R, Pradeep B, Shripathi T, Philip RR. Rapid room temperature crystallization of TiO2 nanotubes Crystengcomm. 19: 1585-1589. DOI: 10.1039/C6Ce02526A |
0.323 |
|
| 2017 |
Almora O, Gerling LG, Voz C, Alcubilla R, Puigdollers J, Garcia-Belmonte G. Superior performance of V2O5 as hole selective contact over other transition metal oxides in silicon heterojunction solar cells Solar Energy Materials and Solar Cells. 168: 221-226. DOI: 10.1016/J.Solmat.2017.04.042 |
0.41 |
|
| 2017 |
Mahato S, Gerling LG, Voz C, Alcubilla R, Puigdollers J. High efficiency ITO-free hybrid solar cell using highly conductive PEDOT:PSS with co-solvent and surfactant treatments Materials Letters. 186: 165-167. DOI: 10.1016/J.Matlet.2016.10.014 |
0.446 |
|
| 2017 |
Gerling LG, Masmitja G, Ortega P, Voz C, Alcubilla R, Puigdollers J. Passivating/hole-selective contacts based on V2O5/SiOx stacks deposited at ambient temperature Energy Procedia. 124: 584-592. DOI: 10.1016/J.Egypro.2017.09.294 |
0.367 |
|
| 2016 |
Mahato S, Gerling LG, Voz C, Alcubilla R, Puigdollers J. PEDOT:PSS as an Alternative Hole Selective Contact for ITO-Free Hybrid Crystalline Silicon Solar Cell Ieee Journal of Photovoltaics. 6: 934-939. DOI: 10.1109/Jphotov.2016.2557072 |
0.408 |
|
| 2016 |
Gerling LG, Mahato S, Morales-Vilches A, Masmitja G, Ortega P, Voz C, Alcubilla R, Puigdollers J. Transition metal oxides as hole-selective contacts in silicon heterojunctions solar cells Solar Energy Materials and Solar Cells. 145: 109-115. DOI: 10.1016/J.Solmat.2015.08.028 |
0.443 |
|
| 2016 |
Boukhili W, Mahdouani M, Bourguiga R, Puigdollers J. Characterization and modeling of organic thin-film transistors based π-conjugated small molecule tetraphenyldibenzoperiflanthene Microelectronic Engineering. 160: 39-48. DOI: 10.1016/J.Mee.2016.03.002 |
0.386 |
|
| 2016 |
Boukhili W, Mahdouani M, Bourguiga R, Puigdollers J. Temperature dependence of the electrical properties of organic thin-film transistors based on tetraphenyldibenzoperiflanthene deposited at different substrate temperatures Microelectronic Engineering. 150: 47-56. DOI: 10.1016/J.Mee.2015.11.006 |
0.452 |
|
| 2016 |
Gerling LG, Masmitja G, Voz C, Ortega P, Puigdollers J, Alcubilla R. Back Junction n-type Silicon Heterojunction Solar Cells with V2O5 Hole-selective Contact Energy Procedia. 92: 633-637. DOI: 10.1016/J.Egypro.2016.07.029 |
0.463 |
|
| 2016 |
Hasna K, Antony A, Puigdollers J, Kumar KR, Jayaraj MK. Fabrication of cost-effective, highly reproducible large area arrays of nanotriangular pillars for surface enhanced Raman scattering substrates Nano Research. 9: 3075-3083. DOI: 10.1007/S12274-016-1190-Y |
0.356 |
|
| 2016 |
Temiño I, Pozo FGd, Ajayakumar M, Galindo S, Puigdollers J, Mas-Torrent M. A Rapid, Low‐Cost, and Scalable Technique for Printing State‐of‐the‐Art Organic Field‐Effect Transistors Advanced Materials and Technologies. 1: 1-7. DOI: 10.1002/Admt.201600090 |
0.436 |
|
| 2015 |
Gerling L, Mahato S, Voz C, Alcubilla R, Puigdollers J. Characterization of Transition Metal Oxide/Silicon Heterojunctions for Solar Cell Applications Applied Sciences. 5: 695-705. DOI: 10.3390/App5040695 |
0.465 |
|
| 2015 |
Reig M, Puigdollers J, Velasco D. Molecular order of air-stable p-type organic thin-film transistors by tuning the extension of the π-conjugated core: the cases of indolo[3,2-b]carbazole and triindole semiconductors Journal of Materials Chemistry C. 3: 506-513. DOI: 10.1039/C4Tc01692K |
0.475 |
|
| 2015 |
Boukhili W, Mahdouani M, Erouel M, Puigdollers J, Bourguiga R. Reversibility of humidity effects in pentacene based organic thin-film transistor: Experimental data and electrical modeling Synthetic Metals. 199: 303-309. DOI: 10.1016/J.Synthmet.2014.12.009 |
0.491 |
|
| 2015 |
Boukhili W, Mahdouani M, Bourguiga R, Puigdollers J. Experimental study and analytical modeling of the channel length influence on the electrical characteristics of small-molecule thin-film transistors Superlattices and Microstructures. 83: 224-236. DOI: 10.1016/J.Spmi.2015.03.045 |
0.368 |
|
| 2015 |
Orpella A, Martín I, López-González JM, Ortega P, Munõz J, Sinde DC, Voz C, Puigdollers J, Alcubilla R. Experimental determination of base resistance contribution for point-like contacted c-Si solar cells using impedance spectroscopy analysis Solar Energy Materials and Solar Cells. 141: 350-355. DOI: 10.1016/J.Solmat.2015.06.013 |
0.399 |
|
| 2015 |
Kennedy M, Ahmed H, Doran J, Norton B, Bosch-Jimenez P, Della Pirriera M, Torralba-Calleja E, Gutiérrez Tauste D, Aubouy L, Daren S, Solomon-Tsvetkov F, Galindo S, Voz C, Puigdollers J. Large Stokes shift downshifting Eu(III) films as efficiency enhancing UV blocking layers for dye sensitized solar cells Physica Status Solidi (a) Applications and Materials Science. 212: 203-210. DOI: 10.1002/Pssa.201431683 |
0.395 |
|
| 2014 |
Geng Y, Pfattner R, Campos A, Wang W, Jeannin O, Hauser J, Puigdollers J, Bromley ST, Decurtins S, Veciana J, Rovira C, Mas-Torrent M, Liu SX. HOMO stabilisation in π-extended dibenzotetrathiafulvalene derivatives for their application in organic field-effect transistors Chemistry (Weinheim An Der Bergstrasse, Germany). 20: 16672-16679. PMID 25318677 DOI: 10.1002/Chem.201404508 |
0.646 |
|
| 2014 |
Geng Y, Pfattner R, Campos A, Hauser J, Laukhin V, Puigdollers J, Veciana J, Mas-Torrent M, Rovira C, Decurtins S, Liu SX. A compact tetrathiafulvalene-benzothiadiazole dyad and its highly symmetrical charge-transfer salt: ordered donor π-stacks closely bound to their acceptors. Chemistry (Weinheim An Der Bergstrasse, Germany). 20: 7136-43. PMID 24737663 DOI: 10.1002/Chem.201304688 |
0.654 |
|
| 2014 |
Shijeesh MR, Vikas LS, Jayaraj MK, Puigdollers J. Degradation study and calculation of density-of-states in PTCDI-C8 channel layer from the electrical characteristics of thin-film transistors Journal of Applied Physics. 116: 24507. DOI: 10.1063/1.4890023 |
0.498 |
|
| 2014 |
Marsal A, Carreras P, Puigdollers J, Voz C, Galindo S, Alcubilla R, Bertomeu J, Antony A. Compositional influence on the electrical performance of zinc indium tin oxide transparent thin-film transistors Thin Solid Films. 555: 107-111. DOI: 10.1016/J.Tsf.2013.08.010 |
0.451 |
|
| 2014 |
Galindo S, Ahmadpour M, Gerling LG, Marsal A, Voz C, Alcubilla R, Puigdollers J. Influence of the density of states on the open-circuit voltage in small-molecule solar cells Organic Electronics. 15: 2553-2560. DOI: 10.1016/J.Orgel.2014.07.011 |
0.441 |
|
| 2014 |
Pfattner R, Moreno C, Voz C, Alcubilla R, Rovira C, Puigdollers J, Mas-Torrent M. Restraints in low dimensional organic semiconductor devices at high current densities Organic Electronics. 15: 211-215. DOI: 10.1016/J.Orgel.2013.10.026 |
0.667 |
|
| 2014 |
Vikas LS, Sanal KC, Jayaraj MK, Antony A, Puigdollers J. Vertically aligned ZnO nanorod array/CuO heterojunction for UV detector application Physica Status Solidi (a). 211: 2493-2498. DOI: 10.1002/Pssa.201431221 |
0.413 |
|
| 2013 |
Voz C, Puigdollers J, Asensi JM, Galindo S, Cheylan S, Pacios R, Ortega P, Alcubilla R. Analysis of the dynamic short-circuit resistance in organic bulk-heterojunction solar cells: relation to the charge carrier collection efficiency Organic Electronics. 14: 1643-1648. DOI: 10.1016/J.Orgel.2013.02.039 |
0.427 |
|
| 2012 |
Puigdollers J, Marsal A, Galindo S, Carreras P, Voz C, Bertomeu J, Alcubilla R. Determination of the Density of States on N-type Ptcdi-c13 Organic Thin-film Semiconductor Mrs Proceedings. 1435. DOI: 10.1557/Opl.2012.1693 |
0.427 |
|
| 2012 |
Pfattner R, Mas-Torrent M, Moreno C, Puigdollers J, Alcubilla R, Bilotti I, Venuti E, Brillante A, Laukhin V, Veciana J, Rovira C. Organic metal–organic semiconductor blended contacts in single crystal field-effect transistors Journal of Materials Chemistry. 22: 16011. DOI: 10.1039/C2Jm32925E |
0.649 |
|
| 2012 |
Moreno C, Pfattner R, Mas-Torrent M, Puigdollers J, Bromley ST, Rovira C, Veciana J, Alcubilla R. Evidence of intrinsic ambipolar charge transport in a high band gap organic semiconductor J. Mater. Chem.. 22: 345-348. DOI: 10.1039/C1Jm15037E |
0.631 |
|
| 2012 |
Voz C, Marsal A, Moreno C, Puigdollers J, Alcubilla R. Comparison between the density-of-states of picene transistors measured in air and under vacuum Synthetic Metals. 161: 2554-2557. DOI: 10.1016/J.Synthmet.2011.10.009 |
0.436 |
|
| 2012 |
Papadopoulos NP, Marsal A, Picos R, Puigdollers J, Hatzopoulos AA. Simulation of organic inverter Solid-State Electronics. 68: 18-21. DOI: 10.1016/J.Sse.2011.08.004 |
0.415 |
|
| 2011 |
Papadopoulos NP, Hatzopoulos AA, Marsal A, Puigdollers J, Picos R. Current And Voltage Simulation Of An Organic Inverter International Journal of High Speed Electronics and Systems. 20: 843-851. DOI: 10.1142/S0129156411007094 |
0.391 |
|
| 2011 |
Otón F, Pfattner R, Pavlica E, Olivier Y, Bratina G, Cornil J, Puigdollers J, Alcubilla R, Fontrodona X, Mas-Torrent M, Veciana J, Rovira C. Electronic and structural characterisation of a tetrathiafulvalene compound as a potential candidate for ambipolar transport properties Crystengcomm. 13: 6597-6600. DOI: 10.1039/C1Ce05559C |
0.608 |
|
| 2011 |
Otón F, Pfattner R, Pavlica E, Olivier Y, Moreno E, Puigdollers J, Bratina G, Cornil J, Fontrodona X, Mas-Torrent M, Veciana J, Rovira C. Electron-withdrawing substituted tetrathiafulvalenes as ambipolar semiconductors Chemistry of Materials. 23: 851-861. DOI: 10.1021/Cm1021867 |
0.636 |
|
| 2010 |
Krautz D, Lunedei E, Puigdollers J, Badenes G, Alcubilla R, Cheylan S. Interchain and intrachain emission branching in polymer light-emitting diode doped by organic molecules Applied Physics Letters. 96: 33301. DOI: 10.1063/1.3276271 |
0.332 |
|
| 2010 |
Puigdollers J, Marsal A, Cheylan S, Voz C, Alcubilla R. Density-of-states in pentacene from the electrical characteristics of thin-film transistors Organic Electronics. 11: 1333-1337. DOI: 10.1016/J.Orgel.2010.05.007 |
0.407 |
|
| 2009 |
Stella M, Pirriera MBD, Puigdollers J, Bertomeu J, Voz C, Andreu J, Alcubilla R. Optical stability of small-molecule thin-films determined by Photothermal Deflection Spectroscopy Mrs Proceedings. 1154. DOI: 10.1557/Proc-1154-B10-45 |
0.329 |
|
| 2009 |
Pirriera MD, Puigdollers J, Voz C, Stella M, Bertomeu J, Alcubilla R. Optoelectronic properties of CuPc thin films deposited at different substrate temperatures Journal of Physics D. 42: 145102. DOI: 10.1088/0022-3727/42/14/145102 |
0.379 |
|
| 2009 |
Puigdollers J, Pirriera MD, Marsal A, Orpella A, Cheylan S, Voz C, Alcubilla R. N-type PTCDI–C13H27 thin-film transistors deposited at different substrate temperature Thin Solid Films. 517: 6271-6274. DOI: 10.1016/J.Tsf.2009.02.113 |
0.504 |
|
| 2009 |
Gmucová K, Weis M, Pirriera MD, Puigdollers J. A comparative study of hydrogen‐ and hydroxyl‐related pentacene defect formation in thin films prepared by Langmuir–Blodgett technique and thermal evaporation Physica Status Solidi (a). 206: 1404-1409. DOI: 10.1002/Pssa.200824459 |
0.369 |
|
| 2008 |
Stella M, Villar F, Rojas FE, Pirriera MD, Voz C, Puigdollers J, Asensi JM, Andreu J, Bertomeu J. Optical and Morphological Characterization of PTCDI-C13 Mrs Proceedings. 1091. DOI: 10.1557/Proc-1091-Aa05-40 |
0.438 |
|
| 2008 |
Cheylan S, Puigdollers J, Bolink HJ, Coronado E, Voz C, Alcubilla R, Badenes G. Increased conductivity of a hole transport layer due to oxidation by a molecular nanomagnet Journal of Applied Physics. 103: 096110. DOI: 10.1063/1.2917304 |
0.381 |
|
| 2008 |
Muñoz D, Voz C, Martin I, Orpella A, Puigdollers J, Alcubilla R, Villar F, Bertomeu J, Andreu J, Damon-Lacoste J, Cabarrocas PRi. Progress in a-Si:H/c-Si heterojunction emitters obtained by Hot-Wire CVD at 200 °C Thin Solid Films. 516: 761-764. DOI: 10.1016/J.Tsf.2007.06.192 |
0.501 |
|
| 2008 |
Mora-Seró I, Luo Y, Garcia-Belmonte G, Bisquert J, Muñoz D, Voz C, Puigdollers J, Alcubilla R. Recombination rates in heterojunction silicon solar cells analyzed by impedance spectroscopy at forward bias and under illumination Solar Energy Materials and Solar Cells. 92: 505-509. DOI: 10.1016/J.Solmat.2007.11.005 |
0.46 |
|
| 2008 |
Nádaždy V, Durný R, Puigdollers J, Voz C, Cheylan S, Weis M. Defect states in pentacene thin films prepared by thermal evaporation and Langmuir–Blodgett technique Journal of Non-Crystalline Solids. 354: 2888-2891. DOI: 10.1016/J.Jnoncrysol.2007.10.095 |
0.391 |
|
| 2008 |
Ferre R, Orpella A, Munoz D, Martín I, Recart F, Voz C, Puigdollers J, Cabarrocas PRi, Alcubilla R. Very low surface recombination velocity of crystalline silicon passivated by phosphorus-doped a-SiCxNy:H(n) alloys Progress in Photovoltaics. 16: 123-127. DOI: 10.1002/Pip.802 |
0.452 |
|
| 2007 |
Cheylan S, Sychev FY, Murzina T, Trifonov T, Maydykovskiy A, Puigdollers J, Alcubilla R, Badenes G. Optical study of polymer infiltration into porous Si based structures Proceedings of Spie. 6593. DOI: 10.1117/12.722386 |
0.364 |
|
| 2007 |
Nádaždy V, Durný R, Puigdollers J, Voz C, Cheylan S, Gmucová K. Experimental observation of oxygen-related defect state in pentacene thin films Applied Physics Letters. 90: 92112. DOI: 10.1063/1.2710203 |
0.364 |
|
| 2007 |
Voz C, Puigdollers J, Cheylan S, Fonrodona M, Stella M, Andreu J, Alcubilla R. Photodiodes based on fullerene semiconductor Thin Solid Films. 515: 7675-7678. DOI: 10.1016/J.Tsf.2006.11.160 |
0.417 |
|
| 2007 |
Puigdollers J, Voz C, Cheylan S, Orpella A, Vetter M, Alcubilla R. Fullerene thin-film transistors fabricated on polymeric gate dielectric Thin Solid Films. 515: 7667-7670. DOI: 10.1016/J.Tsf.2006.11.085 |
0.507 |
|
| 2007 |
Cheylan S, Bolink H, Fraleoni-Morgera A, Puigdollers J, Voz C, Mencarelli I, Setti L, Alcubilla R, Badenes G. Improving the efficiency of light-emitting diode based on a thiophene polymer containing a cyano group Organic Electronics. 8: 641-647. DOI: 10.1016/J.Orgel.2007.04.009 |
0.342 |
|
| 2006 |
Garcia-Belmonte G, García-Cañadas J, Mora-Seró I, Bisquert J, Voz C, Puigdollers J, Alcubilla R. Effect of buffer layer on minority carrier lifetime and series resistance of bifacial heterojunction silicon solar cells analyzed by impedance spectroscopy Thin Solid Films. 514: 254-257. DOI: 10.1016/J.Tsf.2006.02.020 |
0.386 |
|
| 2006 |
Vetter M, Voz C, Ferre R, Martín I, Orpella A, Puigdollers J, Andreu J, Alcubilla R. Electronic properties of intrinsic and doped amorphous silicon carbide films Thin Solid Films. 511: 290-294. DOI: 10.1016/J.Tsf.2005.11.108 |
0.444 |
|
| 2006 |
Voz C, Muñoz D, Fonrodona M, Martin I, Puigdollers J, Alcubilla R, Escarre J, Bertomeu J, Andreu J. Bifacial heterojunction silicon solar cells by hot-wire CVD with open-circuit voltages exceeding 600 mV Thin Solid Films. 511: 415-419. DOI: 10.1016/J.Tsf.2005.11.099 |
0.474 |
|
| 2006 |
Cheylan S, Fraleoni-Morgera A, Puigdollers J, Voz C, Setti L, Alcubilla R, Badenes G, Costa-Bizzarri P, Lanzi M. Study of a thiophene-based polymer for optoelectronic applications Thin Solid Films. 497: 16-19. DOI: 10.1016/J.Tsf.2005.09.177 |
0.366 |
|
| 2006 |
Puigdollers J, Voz C, Fonrodona M, Cheylan S, Stella M, Andreu J, Vetter M, Alcubilla R. Copper phthalocyanine thin-film transistors with polymeric gate dielectric Journal of Non-Crystalline Solids. 352: 1778-1782. DOI: 10.1016/J.Jnoncrysol.2005.10.063 |
0.49 |
|
| 2006 |
Stella M, Voz C, Puigdollers J, Rojas F, Fonrodona M, Escarré J, Asensi JM, Bertomeu J, Andreu J. Low level optical absorption measurements on organic semiconductors Journal of Non-Crystalline Solids. 352: 1663-1667. DOI: 10.1016/J.Jnoncrysol.2005.09.048 |
0.327 |
|
| 2006 |
Muñoz D, Voz C, Fonrodona M, Garin M, Orpella A, Vetter M, Puigdollers J, Alcubilla R, Villar F, Bertomeu J, Andreu J. Characterization of bifacial heterojunction silicon solar cells obtained by hot-wire CVD Journal of Non-Crystalline Solids. 352: 1953-1957. DOI: 10.1016/J.Jnoncrysol.2005.09.043 |
0.464 |
|
| 2005 |
Puigdollers J, Voz C, Fonrodona M, Martín I, Orpella A, Vetter M, Alcubilla R. Flexible Pentacene/PMMA Thin-Film Transistors Fabricated on Aluminium Foil Substrates Mrs Proceedings. 871. DOI: 10.1557/Proc-871-I9.9 |
0.472 |
|
| 2005 |
Voz C, Puigdollers J, Fonrodona M, Martin I, Orpell A, Vetter M, Fabregat F, Garcia G, Bisquert J, Alcubilla R. Transverse Electrical Transport in Pentacene Photodiodes Mrs Proceedings. 871. DOI: 10.1557/Proc-871-I9.28 |
0.435 |
|
| 2005 |
Cheylan S, Fraleoni-Morgera A, Puigdollers J, Voz C, Alcubilla R, Setti L, Badenes G. Comprehensive study of a novel thiophene-based polymer Proceedings of Spie. 5937: 343-350. DOI: 10.1117/12.617190 |
0.358 |
|
| 2005 |
Martín I, Vetter M, Garín M, Orpella A, Voz C, Puigdollers J, Alcubilla R. Crystalline silicon surface passivation with amorphous SiCx:H films deposited by plasma-enhanced chemical-vapor deposition Journal of Applied Physics. 98: 114912. DOI: 10.1063/1.2140867 |
0.437 |
|
| 2005 |
Estrada M, Cerdeira A, Puigdollers J, Reséndiz L, Pallares J, Marsal LF, Voz C, Iñiguez B. Accurate modeling and parameter extraction method for organic TFTs Solid-State Electronics. 49: 1009-1016. DOI: 10.1016/J.Sse.2005.02.004 |
0.359 |
|
| 2005 |
Orpella A, Vetter M, Ferré R, Martín I, Puigdollers J, Voz C, Alcubilla R. Phosphorus-diffused silicon solar cell emitters with plasma enhanced chemical vapor deposited silicon carbide Solar Energy Materials and Solar Cells. 87: 667-674. DOI: 10.1016/J.Solmat.2004.08.021 |
0.415 |
|
| 2005 |
Voz C, Puigdollers J, Martín I, Muñoz D, Orpella A, Vetter M, Alcubilla R. Optoelectronic devices based on evaporated pentacene films Solar Energy Materials and Solar Cells. 87: 567-573. DOI: 10.1016/J.Solmat.2004.07.039 |
0.446 |
|
| 2004 |
Martı́n I, Vetter M, Orpella A, Voz C, Puigdollers J, Alcubilla R, Kharchenko AV, Cabarrocas PRi. Improvement of crystalline silicon surface passivation by hydrogen plasma treatment Applied Physics Letters. 84: 1474-1476. DOI: 10.1063/1.1647702 |
0.346 |
|
| 2004 |
Vetter M, Martı́n I, Orpella A, Puigdollers J, Voz C, Alcubilla R. IR-study of a-SiCx:H and a-SiCxNy:H films for c-Si surface passivation Thin Solid Films. 451: 340-344. DOI: 10.1016/J.Tsf.2003.10.125 |
0.432 |
|
| 2004 |
Puigdollers J, Voz C, Martín I, Vetter M, Orpella A, Alcubilla R. Electrical characterization of pentacene thin-film transistors with polymeric gate dielectric Synthetic Metals. 146: 355-358. DOI: 10.1016/J.Synthmet.2004.08.027 |
0.476 |
|
| 2004 |
PUIGDOLLERS J. Pentacene thin-film transistors with polymeric gate dielectric Organic Electronics. 5: 67-71. DOI: 10.1016/J.Orgel.2003.10.002 |
0.47 |
|
| 2004 |
Puigdollers J, Voz C, Martin I, Orpella A, Vetter M, Alcubilla R. Pentacene thin-film transistors on polymeric gate dielectric: device fabrication and electrical characterization Journal of Non-Crystalline Solids. 338: 617-621. DOI: 10.1016/J.Jnoncrysol.2004.03.054 |
0.499 |
|
| 2003 |
Voz C, Martin I, Orpella A, Puigdollers J, Vetter M, Alcubilla R, Soler D, Fonrodona M, Bertomeu J, Andreu J. Surface passivation of crystalline silicon by Cat-CVD amorphous and nanocrystalline thin silicon films Thin Solid Films. 430: 270-273. DOI: 10.1016/S0040-6090(03)00130-5 |
0.463 |
|
| 2003 |
Puigdollers J, Voz C, Orpella A, Martin I, Vetter M, Alcubilla R. Pentacene thin-films obtained by thermal evaporation in high vacuum Thin Solid Films. 427: 367-370. DOI: 10.1016/S0040-6090(02)01238-5 |
0.425 |
|
| 2002 |
Vetter M, Martín I, Orpella A, Voz C, Puigdollers J, Alcubilla R. Characterization of a-SiC x :H Films for c-Si Surface Passivation Mrs Proceedings. 715. DOI: 10.1557/Proc-715-A24.5 |
0.422 |
|
| 2002 |
Martı́n I, Vetter M, Orpella A, Voz C, Puigdollers J, Alcubilla R. Surface passivation of n-type crystalline Si by plasma-enhanced-chemical-vapor-deposited amorphous SiCx:H and amorphous SiCxNy:H films Applied Physics Letters. 81: 4461-4463. DOI: 10.1063/1.1527230 |
0.45 |
|
| 2002 |
Voz C, Puigdollers J, Orpella A, Alcubilla R, Morral AFi, Tripathi V, Cabarrocas PRi. Thin-film transistors with polymorphous silicon active layer Journal of Non-Crystalline Solids. 299302: 1345-1350. DOI: 10.1016/S0022-3093(01)01099-7 |
0.477 |
|
| 2002 |
Puigdollers J, Voz C, Orpella A, Martı́n I, Soler D, Fonrodona M, Bertomeu J, Andreu J, Alcubilla R. Electronic transport in low temperature nanocrystalline silicon thin-film transistors obtained by hot-wire CVD Journal of Non-Crystalline Solids. 299302: 400-404. DOI: 10.1016/S0022-3093(01)01015-8 |
0.479 |
|
| 2001 |
Martin I, Vetter M, Orpella A, Puigdollers J, Cuevas A, Alcubilla R. Surface passivation of p-type crystalline Si by plasma enhanced chemical vapor deposited amorphous SiC x :H films Applied Physics Letters. 79: 2199-2201. DOI: 10.1063/1.1404406 |
0.448 |
|
| 2001 |
Orpella A, Voz C, Puigdollers J, Dosev D, Fonrodona M, Soler D, Bertomeu J, Asensi JM, Andreu J, Alcubilla R. Stability of hydrogenated nanocrystalline silicon thin-film transistors Thin Solid Films. 395: 335-338. DOI: 10.1016/S0040-6090(01)01290-1 |
0.477 |
|
| 2001 |
Dosev DK, Puigdollers J, Orpella A, Voz C, Fonrodona M, Soler D, Marsal LF, Pallarès J, Bertomeu J, Andreu J, Alcubilla R. Analysis of bias stress on thin-film transistors obtained by Hot-Wire Chemical Vapour Deposition Thin Solid Films. 383: 307-309. DOI: 10.1016/S0040-6090(00)01608-4 |
0.449 |
|
| 2000 |
Marsal LF, Pallares J, Orpella A, Bardés D, Puigdollers J, Alcubilla R. Effects of thermal annealing in the properties of PECVD a-SiC layers Mrs Proceedings. 609. DOI: 10.1557/Proc-609-A23.7 |
0.308 |
|
| 2000 |
Puigdollers J, Dosev D, Orpella A, Voz C, Peiro D, Bertomeu J, Marsal LF, Pallares J, Andreu J, Alcubilla R. Microcrystalline silicon thin film transistors obtained by hot-wire CVD Materials Science and Engineering B-Advanced Functional Solid-State Materials. 69: 526-529. DOI: 10.1016/S0921-5107(99)00252-4 |
0.468 |
|
| 2000 |
Orpella A, Puigdollers J, Bardés D, Alcubilla R, Marsal LF, Pallarès J. Fabrication and characterization of in situ-doped a-Si0.8C0.2 emitter bipolar transistors Solid-State Electronics. 44: 1543-1548. DOI: 10.1016/S0038-1101(00)00121-0 |
0.433 |
|
| 2000 |
Puigdollers J, Orpella A, Dosev D, Voz C, Peiró D, Pallarés J, Marsal LF, Bertomeu J, Andreu J, Alcubilla R. Thin film transistors obtained by hot wire CVD Journal of Non-Crystalline Solids. 266: 1304-1309. DOI: 10.1016/S0022-3093(99)00942-4 |
0.448 |
|
| 1997 |
Bertomeu J, Puigdollers J, Asensi JM, Andreu J. Infrared characterization of interfaces Applied Surface Science. 108: 211-217. DOI: 10.1016/S0169-4332(96)00600-9 |
0.336 |
|
| 1996 |
Bertomeu J, Puigdollers J, Peiró D, Cifre J, Delgado JC, Andreu J. Study of post-deposition contamination in low-temperature deposited polysilicon films Materials Science and Engineering B-Advanced Functional Solid-State Materials. 36: 96-99. DOI: 10.1016/0921-5107(95)01300-8 |
0.38 |
|
| 1995 |
Puigdollers J, Bertomeu J, Cifre J, Andreu J, Delgado JC. Deposition of Polysilicon Films by Hot-Wire CVD at Low Temperatures for Photovoltaic Applications Mrs Proceedings. 377. DOI: 10.1557/Proc-377-63 |
0.377 |
|
| 1995 |
Puigdollers J, Cifre J, Polo MC, Asensi JM, Bertomeu J, Andreu J, Lloret A. P-doped polycrystalline silicon films obtained at low temperature by hot-wire chemical vapor deposition Applied Surface Science. 86: 600-603. DOI: 10.1016/0169-4332(94)00420-X |
0.428 |
|
| 1994 |
Puigdollers J, Asensi JM, Bertomeu J, Andreu J, Delgado JC. Influence of Substrate Temperature on the Properties of A-Si:H P-Layers Obtained from Trimethylboron Mrs Proceedings. 336. DOI: 10.1557/Proc-336-565 |
0.384 |
|
| 1994 |
Cifre J, Puigdollers J, Polo MC, Esteve J. Trimethylboron doping of CVD diamond thin films Diamond and Related Materials. 3: 628-631. DOI: 10.1016/0925-9635(94)90238-0 |
0.391 |
|
| 1994 |
Polo MC, Cifre J, Puigdollers J, Esteve J. Comparative study of trimethylboron doping of hot filament chemically vapour deposited and microwave plasma chemically vapour deposited diamond films Thin Solid Films. 253: 136-140. DOI: 10.1016/0040-6090(94)90308-5 |
0.396 |
|
| 1994 |
Cifre J, Bertomeu J, Puigdollers J, Polo MC, Andreu J, Lloret A. Polycrystalline silicon films obtained by hot-wire chemical vapour deposition Applied Physics A. 59: 645-651. DOI: 10.1007/Bf00331926 |
0.403 |
|
| 1993 |
Puigdollers J, Bertomeu J, Asensi JM, Andreu J, Delgado JC. Fast Degradation with Pulsed Light of a-Si:H P-I-N Photodiodes Mrs Proceedings. 297. DOI: 10.1557/Proc-297-613 |
0.386 |
|
| 1993 |
Asensi JM, Andreu J, Puigdollers J, Bertomeu J, Delgado JC. Carrier Injection in a-Si:H P-I-N Devices: Hydrogen Redistribution and Defect Creation Mrs Proceedings. 297: 315. DOI: 10.1557/Proc-297-315 |
0.367 |
|
| 1993 |
Maass F, Bertomeu J, Asensi JM, Puigdollers J, Andreu J, Delgado JC, Esteve J. Structural characterization of a-SiC:H by thermal desorption spectroscopy Applied Surface Science. 768-771. DOI: 10.1016/0169-4332(93)90619-M |
0.332 |
|
| 1993 |
Bertomeu J, Asensi J, Puigdollers J, Andreu J, Morenza J. Structure of a-Si: H/a-Si1-xCx: H multilayers deposited in a reactor with automated substrate holder Vacuum. 44: 129-134. DOI: 10.1016/0042-207X(93)90361-D |
0.341 |
|
| 1993 |
Bertomeu J, Puigdollers J, Asensi JM, Andreu J, Delgado JC. Persistent photoconductivity in undoped a-Si:H/a-SiC:H multilayers Thin Solid Films. 228: 165-168. DOI: 10.1016/0040-6090(93)90589-H |
0.339 |
|
| 1993 |
Bertomeu J, Puigdollers J, Asensi JM, Andreu J. On the determination of the interface density of states in aSi:H/aSi1−XCX:H multilayers Journal of Non-Crystalline Solids. 861-864. DOI: 10.1016/0022-3093(93)91133-N |
0.302 |
|
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